2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Micromechanical view of heterointegration by wafer bonding and layer splitting 晶圆键合和层裂异质集成的微观力学观点
H. Baumgart, M. Mamun, A. Elmustafa
{"title":"Micromechanical view of heterointegration by wafer bonding and layer splitting","authors":"H. Baumgart, M. Mamun, A. Elmustafa","doi":"10.1109/LTB-3D.2014.6886169","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886169","url":null,"abstract":"An overview of the micromechanical issues of heterointegration by wafer bonding and layer exfoliation is presented for the systems of AlN on sapphire and epitaxial Si<sub>1-x</sub>Ge<sub>x</sub> and Ge-free bi-axially strained sSOI. AlN layers grown epitaxially on sapphire were implanted with hydrogen ions at 50 keV with various fluences ranging from 0.5 × 10<sup>17</sup>cm<sup>-2</sup> to 3 × 10<sup>17</sup>cm<sup>-2</sup> in order to optimize the experimental conditions for bonding and AlN thin layer transfer using the ion-cut process.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123604018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN on h-BN technology for release and transfer of nitride devices 氮化镓对h-BN的释放和转移装置技术
M. Hiroki, K. Kumakura, Y. Kobayashi, T. Akasaka, Hideki Yamamoto, T. Makimoto
{"title":"GaN on h-BN technology for release and transfer of nitride devices","authors":"M. Hiroki, K. Kumakura, Y. Kobayashi, T. Akasaka, Hideki Yamamoto, T. Makimoto","doi":"10.1109/LTB-3D.2014.6886170","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886170","url":null,"abstract":"We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127094379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Copper-to-dielectric heterogeneous bonding for 3D integration 用于三维集成的铜-介电非均质键合
Wei Lin, Juntao Li, J. Washington, David Rath, S. Skordas, T. Kirihata, K. Winstel, B. Peethala, J. Demarest, D. Song, D. Edelstein, S. Iyer
{"title":"Copper-to-dielectric heterogeneous bonding for 3D integration","authors":"Wei Lin, Juntao Li, J. Washington, David Rath, S. Skordas, T. Kirihata, K. Winstel, B. Peethala, J. Demarest, D. Song, D. Edelstein, S. Iyer","doi":"10.1109/LTB-3D.2014.6886145","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886145","url":null,"abstract":"A novel hybrid bonding process has been developed that achieved a successful copper/SiO2 heterogeneous bonding.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133251238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Process development for 3D integration: Conductive wafer bonding for high density inter-chip interconnection 3D集成的工艺开发:用于高密度芯片间互连的导电晶圆键合
Chongshen Song, Wenqi Zhang, D. Shangguan
{"title":"Process development for 3D integration: Conductive wafer bonding for high density inter-chip interconnection","authors":"Chongshen Song, Wenqi Zhang, D. Shangguan","doi":"10.1109/LTB-3D.2014.6886143","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886143","url":null,"abstract":"This paper discusses the application of conductive wafer bonding, especially wafer level hybrid Cu-Cu bonding, for realizing high density inter-chip interconnection. 3D integration process using conductive wafer bonding and the test vehicle for bonding process evaluation are described. Different pre-bonding surface treatment methods and bonding procedures are studied and compared for yield and throughput optimization.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134357700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room temperature bonding of sapphire with sapphire or metal substrates in Air using Au films 用Au薄膜在空气中与蓝宝石或金属衬底进行室温键合
M. Ishii, H. Kon, M. Uomoto, T. Nakaya, T. Shimatsu
{"title":"Room temperature bonding of sapphire with sapphire or metal substrates in Air using Au films","authors":"M. Ishii, H. Kon, M. Uomoto, T. Nakaya, T. Shimatsu","doi":"10.1109/LTB-3D.2014.6886166","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886166","url":null,"abstract":"Room temperature bonding of sapphire-sapphire and sapphire-metal substrates was achieved in Air using Au films. This bonding technique can support expansion of the potential applications of sapphire in diverse industries.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121688196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Scaling of 3D interconnect technology incorporating metal-metal bonds to pitches of 10 microns and below for infrared focal plane array applications 将金属-金属键结合到10微米及以下的红外焦平面阵列应用的3D互连技术的缩放
D. Temple, E. Vick, M. Lueck, D. Malta
{"title":"Scaling of 3D interconnect technology incorporating metal-metal bonds to pitches of 10 microns and below for infrared focal plane array applications","authors":"D. Temple, E. Vick, M. Lueck, D. Malta","doi":"10.1109/LTB-3D.2014.6886146","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886146","url":null,"abstract":"We will review the status of the implementation of high density area array 3D integration technology relying on low temperature metal-metal bonds in functional infrared imaging systems, and will discuss scaling of the technology for compatibility with readout integrated circuits for focal plane arrays with 10 micron and smaller pixels. Future research needs in this rapidly growing application area will be identified.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125656084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Highly thermoresistant temporary bonding/debonding system without organic adhesives for 3D integration 高度耐热的临时粘接/脱粘系统,无有机粘合剂,用于3D集成
H. Hashiguchi, T. Fukushima, M. Murugesan, J. Bea, H. Kino, K. Lee, T. Tanaka, M. Koyanagi
{"title":"Highly thermoresistant temporary bonding/debonding system without organic adhesives for 3D integration","authors":"H. Hashiguchi, T. Fukushima, M. Murugesan, J. Bea, H. Kino, K. Lee, T. Tanaka, M. Koyanagi","doi":"10.1109/LTB-3D.2014.6886153","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886153","url":null,"abstract":"This study introduces a highly thermoresistant temporary bonding/debonding system. Known Good Dies (KGDs) were bonded through SOG to a support wafer. The KGDs were thinned, and Cu-TSVs were formed by via-last/backside-via processes. These KGDs can be readily debonded from the wafer by excimer laser irradiation to the a-Si:H layer on the wafer.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"21 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129664471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
In-situ observation of ultrasonic bonding using high speed camera 超声粘接的高速相机原位观察
T. Shuto, T. Asano
{"title":"In-situ observation of ultrasonic bonding using high speed camera","authors":"T. Shuto, T. Asano","doi":"10.1109/LTB-3D.2014.6886184","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886184","url":null,"abstract":"Room-temperature microjoining in the air ambient has been achieved by using cone-shaped Au bump with ultrasonic application. In-situ observation of the ultrasonic bonding is performed using a high speed camera for the purpose of investigating dynamics of the bonding process. “Softening” of the bump under the application of ultrasonic is observed. It is suggested that bonding is almost completed within 100 ms.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123225506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal-assisted hermetic wafer-level packaging 金属辅助密封晶圆级封装
Dany Chagnon, D. Işık, P. Levesque, François Lewis, Marie-Eve Caza, X. Le, J. Poirier, D. Michel, R. Larger, O. Moutanabbir
{"title":"Metal-assisted hermetic wafer-level packaging","authors":"Dany Chagnon, D. Işık, P. Levesque, François Lewis, Marie-Eve Caza, X. Le, J. Poirier, D. Michel, R. Larger, O. Moutanabbir","doi":"10.1109/LTB-3D.2014.6886197","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886197","url":null,"abstract":"This work main focus is the use of Gold thermocompression and gold-tin transient liquid phase bonding to achieve a hermetic wafer-level packaging. Herein, we describe the major advantages and difficulties that characterized these two bonding processes at design and materials levels. We also provide detailed in- and ex- situ studies of morphological and thermal stabilities of the multi-layer stacks utilized to prepare the wafers to be bonded. These investigations also set the ground to optimize the bonding conditions in order to enable high-quality bonding interfaces.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126759600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of walk-off compensating wavelength-conversion devices with stacks of multiple plates by use of room-temperature bonding 利用室温键合技术制造多片堆叠的偏移补偿波长转换器件
Yoshimi Ariga, T. Onda, Waka Kubota, I. Shoji
{"title":"Fabrication of walk-off compensating wavelength-conversion devices with stacks of multiple plates by use of room-temperature bonding","authors":"Yoshimi Ariga, T. Onda, Waka Kubota, I. Shoji","doi":"10.1109/LTB-3D.2014.6886158","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886158","url":null,"abstract":"We have developed new structured wavelength-conversion devices with stacked plates of β-BaB<sub>2</sub>O<sub>4</sub> using the room-temperature bonding technique. The output beam quality is improved, while the generated UV power becomes lower when thinner plates are used.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129524867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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