Copper-to-dielectric heterogeneous bonding for 3D integration

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886145

Wei Lin, Juntao Li, J. Washington, David Rath, S. Skordas, T. Kirihata, K. Winstel, B. Peethala, J. Demarest, D. Song, D. Edelstein, S. Iyer

引用次数: 1

Abstract

A novel hybrid bonding process has been developed that achieved a successful copper/SiO2 heterogeneous bonding.

查看原文本刊更多论文

用于三维集成的铜-介电非均质键合

开发了一种新的杂化键合工艺，成功地实现了铜/SiO2的非均相键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

自引率

0.00%

发文量