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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Real time FITR spectroscopic and kinetic studies of Cu surface reduction by using formic acid vapor 甲酸蒸气对Cu表面还原的实时红外光谱及动力学研究
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-08-28 DOI: 10.1109/LTB-3D.2014.6886180
C. Kuo, Jenn-Ming Song
{"title":"Real time FITR spectroscopic and kinetic studies of Cu surface reduction by using formic acid vapor","authors":"C. Kuo, Jenn-Ming Song","doi":"10.1109/LTB-3D.2014.6886180","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886180","url":null,"abstract":"In this study, an real time FTIR system was adopted to monitor the reactions between formic acid vapors and the oxidized copper surface at difference temperatures. A cuprous oxide (Cu2O) surface layer with the thickness of 130nm can be perfectly reduced to metallic Cu by low concentration formic acid vapor at a temperature down to 200°C, and the reduction rate increases with a higher reaction temperature. It is suggested that there exists a critical temperature at about 250°C, above which H2 may dissociate into H+, and combines with OH- boned on the sample surface to form large amounts of H2O. A much higher activation energy may support this point.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121765287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells 退火对混合串联太阳能电池GaAs/Si键合界面的影响
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-08-28 DOI: 10.1109/LTB-3D.2014.6886190
L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa
{"title":"Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells","authors":"L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa","doi":"10.1109/LTB-3D.2014.6886190","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886190","url":null,"abstract":"Effects of annealing on bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. We observed amorphous layer at the interfaces prior to the annealing. We also investigated the effects of the annealing on the current-voltage characteristics of n<sup>+</sup>-GaAs/n<sup>++</sup>-Si and p<sup>+</sup>-GaAs/n<sup>++</sup>-Si junctions.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124072249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room temperature bonding of electroplated Au patterns with atomically smooth surface prepared by a replication process using a sacrificial layer 使用牺牲层的复制工艺制备具有原子光滑表面的电镀Au图案的室温键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-08-28 DOI: 10.1109/LTB-3D.2014.6886164
Y. Kurashima, A. Maeda, H. Takagi
{"title":"Room temperature bonding of electroplated Au patterns with atomically smooth surface prepared by a replication process using a sacrificial layer","authors":"Y. Kurashima, A. Maeda, H. Takagi","doi":"10.1109/LTB-3D.2014.6886164","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886164","url":null,"abstract":"We demonstrate a replication process of a surface shape from an atomically smooth master substrate onto electroplated Au patterns by a lift-off process using a thin sacrificial layer. An atomically smooth Au surface with a root mean square surface roughness of 0.8 nm could be created by the process. We also examined its applicability to room-temperature Au-Au bonding in air. A high bonding strength of about 250 MPa was obtained.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature and low pressure bump bonding realized by single-micrometer Ag-nanoparticle bumps 利用单微米银纳米颗粒的凹凸实现低温低压凹凸键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886186
Weixin Fu, T. Kasahara, A. Okada, S. Shoji, A. Shigetou, J. Mizuno
{"title":"Low temperature and low pressure bump bonding realized by single-micrometer Ag-nanoparticle bumps","authors":"Weixin Fu, T. Kasahara, A. Okada, S. Shoji, A. Shigetou, J. Mizuno","doi":"10.1109/LTB-3D.2014.6886186","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886186","url":null,"abstract":"A bonding method using single-micrometer bumps, which were formed by Ag nanoparticle, had been realized under low bonding temperature and low compressive stress. The bump diameter is 8 μm and the pitch is 16 μm. The bonding temperature was 250°C under compressive stress of about 41.4 MPa. A shear test was carried out and the strength of the bond could reach 5.89 MPa.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"718 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115127130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment Cu颗粒添加对锡铋焊料的显微组织和熔点的影响
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886182
O. Mokhtari, H. Nishikawa
{"title":"The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment","authors":"O. Mokhtari, H. Nishikawa","doi":"10.1109/LTB-3D.2014.6886182","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886182","url":null,"abstract":"This study aims to produce high temperature joints by using relatively low processing temperature eutectic Sn-Bi solder. By the addition of 30 mass %Cu particles to the eutectic Sn-Bi solder, this research produces a new in-situ phase with a higher remelting point. The microstructure of eutectic Sn-Bi and Sn-Bi with Cu particles addition were investigated where added Cu particles converted almost all Sn phase to new phases. The microstructure analysis shows that increasing the heat input accelerates the reaction between Sn phase and Cu particles. The differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and electron probe microanalyzer (EPMA) proved that almost all Sn phases is converted to new phases resulting in a higher melting point.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115713725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon nanotube bump interconnect for flexible multilayer substrates 柔性多层衬底的碳纳米管凹凸互连
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886162
M. Fujino, H. Terasaka, T. Suga
{"title":"Carbon nanotube bump interconnect for flexible multilayer substrates","authors":"M. Fujino, H. Terasaka, T. Suga","doi":"10.1109/LTB-3D.2014.6886162","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886162","url":null,"abstract":"Bump shaped Vertically Aligned Carbon Nanotubes as bump interconnect structures was fabricated and located on flexible substrates for flexible multilayer substrates. These structures were bonded and transferred by means of surface activated bonding method. In this paper, the fabrication process and electrical and mechanical properties of these structures is reported.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121341963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of miniaturized polarization sensors using flip-chip bonding with atmospheric-pressure plasma activation 用倒装晶片键合与大气压等离子体活化制备小型化极化传感器
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886175
So Ikeda, Michitaka Yamamoto, E. Higurashi, T. Suga, T. Oguchi
{"title":"Fabrication of miniaturized polarization sensors using flip-chip bonding with atmospheric-pressure plasma activation","authors":"So Ikeda, Michitaka Yamamoto, E. Higurashi, T. Suga, T. Oguchi","doi":"10.1109/LTB-3D.2014.6886175","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886175","url":null,"abstract":"An ultra-small polarization sensor integrated with aluminum wire-grid polarizers has been developed for a compact optical rotary encoder. Flip-chip bonding using atmospheric-pressure plasma activation with mixed gas of Ar and H2 at a relatively low bonding temperature of 150 °C was applied to fabricate the integrated sensors. The feasibility of rotational angle measurement of a linear polarizer was demonstrated using the fabricated sensors.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122057157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate InAs/GaAs量子点激光器在SOI衬底上的金属条键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886157
Yuan-Hsuan Jhang, K. Tanabe, S. Iwamoto, Y. Arakawa
{"title":"InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate","authors":"Yuan-Hsuan Jhang, K. Tanabe, S. Iwamoto, Y. Arakawa","doi":"10.1109/LTB-3D.2014.6886157","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886157","url":null,"abstract":"We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm2, and the spectrum shows the lasing wavelength around 1.3 μm at room temperature.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129832031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of thermoelectric TiZrNiSn thin films by contact layers 热电TiZrNiSn薄膜的接触层改进
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886168
W. Wunderlich, Y. Matsumura
{"title":"Improvement of thermoelectric TiZrNiSn thin films by contact layers","authors":"W. Wunderlich, Y. Matsumura","doi":"10.1109/LTB-3D.2014.6886168","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886168","url":null,"abstract":"The Half-Heusler alloy (Ti,Zr)NiSn has been reported [1-6] as one of the thermoelectric (TE) materials with large Seebeck coefficient. Thin films sputtered by magnetron-sputtering have better properties when they are deposited on Cu, rather than Fe, Ni or Si. This interface phenomenon is explained by band-structure calculations and guidelines for 3D-printer processing are provided.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114882104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration 采用表面活化键合(SAB)技术的Cu/介电杂化键合用于三维集成
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886151
Ran He, A. Yamauchi, T. Suga
{"title":"Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration","authors":"Ran He, A. Yamauchi, T. Suga","doi":"10.1109/LTB-3D.2014.6886151","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886151","url":null,"abstract":"Surface activation is of great importance for low temperature wafer bonding technology development. We developed new low temperature Cu/dielectric hybrid bonding process by using surface-activated bonding technologies for 3D integration application. We report the surface analysis results of the hybrid surface treated by Ar plasma and Ar FAB, and discuss the effects of different surface activation processes on wafer bonding, and conclude with prospects for the future.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125980679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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