Journal of Materials Chemistry C最新文献

Heat capacity and structural transition effect in polycrystalline kesterite† 多晶钾长石的热容量和结构转变效应

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-08 DOI: 10.1039/D4TC02105C

Cédric Bourgès, Andrei Novitskii, Makoto Tachibana, Naoki Sato and Takao Mori

引用次数: 0

A special collection honoring Professor Thom Palstra, an exceptional scientist, leader and mentor 纪念杰出科学家、领导者和导师 Thom Palstra 教授的特别作品集

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-07 DOI: 10.1039/D4TC90157F

Yoshihiro Iwasa, Gabriela Maris, Beatriz Noheda, Harold J. W. Zandvliet and Oana D. Jurchescu

引用次数: 0

Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems† 先进神经形态系统中用于模拟突触和神经元的 NbOx 记忆晶闸管的双重功能†。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-04 DOI: 10.1039/D4TC03212H

Seongmin Kim, Jungang Heo, Sungjun Kim and Min-Hwi Kim

{"title":"Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems†","authors":"Seongmin Kim, Jungang Heo, Sungjun Kim and Min-Hwi Kim","doi":"10.1039/D4TC03212H","DOIUrl":"https://doi.org/10.1039/D4TC03212H","url":null,"abstract":"In this study, we reveal a novel NbOx memristor structure that significantly advances neuromorphic computing by modulating compliance current (CC). This structure emulates the dynamic functionalities of artificial synapses and neurons, addressing the challenge of accurately imitating biological counterparts. Our memristors uniquely exhibit both memory switching (MS) and threshold switching (TS) properties through oxygen content modulation, enabling a single device to undertake diverse synaptic plasticity and neuronal functions. Our findings demonstrate the dual functionality of NbOx-based memristors: acting as TS and neuron-like devices at high CCs, and as MS and synapse-like elements at low CCs. At a higher CC, the device exhibits effective TS behaviors, including favorable threshold and holding voltages, along with efficient wait and recovery times. This has enabled the creation of a restricted Boltzmann machine (RBM) model for reproducing Modified National Institute of Standards and Technology (MNIST) database images and the implementation of the leaky integrate-and-fire (LIF) model, which in turn opens possibilities for utilizing spike neural network (SNN) frameworks. At lower CCs, the memristor displays synaptic characteristics such as short-term and long-term memory, facilitated by retention loss for offline MNIST simulation. The NbOx memristor represents a critical component for the future of neuromorphic devices and capable of performing both neuronal and synaptic functions. It paves the way for sophisticated, integrated computational models, thereby significantly contributing to the neuromorphic engineering field. Through comprehensive structural and functional analyses, this study underscores the potential of NbOx memristors in neuromorphic computing and lays the foundation for future high-performance neuromorphic device advancements.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142447288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates 硅衬底上基于 p-GaN 栅极的高电子迁移率晶体管 (HEMT) 所面临的挑战和取得的进展

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-02 DOI: 10.1039/D4TC02720E

Miaodong Zhu, Guoxin Li, Hangtian Li, Zhonghong Guo, Ying Yang, Jianbo Shang, Yikang Feng, Yunshu Lu, Zexi Li, Xiaohang Li, Fangliang Gao, Wenqiu Wei and Shuti Li

{"title":"Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates","authors":"Miaodong Zhu, Guoxin Li, Hangtian Li, Zhonghong Guo, Ying Yang, Jianbo Shang, Yikang Feng, Yunshu Lu, Zexi Li, Xiaohang Li, Fangliang Gao, Wenqiu Wei and Shuti Li","doi":"10.1039/D4TC02720E","DOIUrl":"https://doi.org/10.1039/D4TC02720E","url":null,"abstract":"Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of excellent characteristics, enabling them to overcome the performance limitations of traditional silicon-based power devices. This comprehensive review discusses the challenges in the fabrication processes and device structures of p-type GaN (p-GaN) gate HEMTs on silicon substrates. Mainly by using Citespace software, this paper demonstrates the analytical results of keyword co-occurrence based on references related to p-GaN gate HEMTs from the core collection of Web of Science, revealing the prominent research topics in this area and discussing the relevant influencing factors and mechanisms of the electrical performance of p-GaN gate HEMTs. Moreover, various methods for optimizing the fabrication processes and device structures proposed in recent years are also reviewed. The future development of p-GaN gate HEMTs is explored, including the integration with more devices, the development of appropriate reliability verification standards, the expansion of production capabilities, and the incorporation of emerging two-dimensional materials.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142447287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

n-Type redox-tuneable conducting polymer optical nanoantennas. n 型氧化还原可调导电聚合物光学纳米天线。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-02 DOI: 10.1039/d4tc03038a

Suraya Kazi, Pravallika Bandaru, Haoran Tang, Yulong Duan, Shangzhi Chen, Fei Huang, Magnus P Jonsson

引用次数: 0

Prediction of two-dimensional 2H-M2O3 (M = Ti and Zr) with strong linear and non-linear optical response in the infrared range† 预测二维 2H-M2O3（M = Ti 和 Zr）在红外范围内具有强烈的线性和非线性光学响应†。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-10-01 DOI: 10.1039/D4TC02958E

Anqi Huang, Linxuan Ji, Qiaoqiao Li, Yu Wu, Yi-min Ding and Liujiang Zhou

{"title":"Prediction of two-dimensional 2H-M2O3 (M = Ti and Zr) with strong linear and non-linear optical response in the infrared range†","authors":"Anqi Huang, Linxuan Ji, Qiaoqiao Li, Yu Wu, Yi-min Ding and Liujiang Zhou","doi":"10.1039/D4TC02958E","DOIUrl":"https://doi.org/10.1039/D4TC02958E","url":null,"abstract":"Recently, MXene-like MOenes have emerged as promising candidates for next-generation two-dimensional optoelectronic devices due to their exceptional electrical and optical properties. By using first-principles calculations, we design a novel two-dimensional 2H-M2O3 (M = Ti, Zr) through the oxygen functionalization of the M2O monolayer, which shows high mechanical, dynamic, and thermal stabilities. The calculation results reveal a relatively small band gap of 0.49 and 0.94 eV and exciton binding energy of 0.26 and 0.46 eV for 2H-Ti2O3 and 2H-Zr2O3 monolayers, respectively. Importantly, they exhibit good light absorption in the infrared range with a first excitonic peak at 0.31 and 0.54 eV, respectively. Notably, a wide transparent window from the visible to ultraviolet region in linear optical spectra is found due to the large gap within the valence bands. The octahedral distortion and small optical gap of the 2H-M2O3 monolayer result in a large second harmonic generation (SHG) coefficient of approximately 4000 pm V−1. This work optimizes the electrical and optical properties of MOenes using O termination, providing high linear and SHG response at specific wavelengths.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142447290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Contributors to the Journal of Materials Chemistry C Emerging Investigators 2024 collection 材料化学杂志》C 版《2024 年新兴研究者》文集撰稿人

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-09-30 DOI: 10.1039/D4TC90151G

引用次数: 0

Heavy metal-free colloidal quantum dots: preparation and application in infrared photodetectors 无重金属胶体量子点：红外光探测器的制备与应用

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-09-25 DOI: 10.1039/D4TC03312D

Xuegang Zhang, Ge Mu, Yongzhe Zhang, Yijian Jiang and Yinzhou Yan

{"title":"Heavy metal-free colloidal quantum dots: preparation and application in infrared photodetectors","authors":"Xuegang Zhang, Ge Mu, Yongzhe Zhang, Yijian Jiang and Yinzhou Yan","doi":"10.1039/D4TC03312D","DOIUrl":"https://doi.org/10.1039/D4TC03312D","url":null,"abstract":"The development of infrared photodetectors is increasingly moving towards the realization of large-scale, cost-effective integrated systems. Currently, silicon (Si), indium gallium arsenide (InGaAs), and mercury cadmium telluride (HgCdTe) dominate infrared photodetectors, but due to the ever-increasing performance requirements and the complexity of emerging application scenarios, a new generation of detector technologies is imperative. Colloidal quantum dots (CQDs), which are compatible with existing silicon-based microelectronics, with low manufacturing costs and simplified processing, are ideal alternatives. Hg- or Pb-based infrared photodetectors have been widely studied owing to their excellent performance. Nevertheless, the presence of heavy metal elements greatly limits the application scenarios of the detectors. Therefore, heavy metal-free (HMF) CQD-based infrared photodetectors solve the above problem from the source. In this work, the latest advancements in the synthesis of HMF CQDs and a brief overview of the development of HMF CQD-based infrared photodetectors are given. Within the context of this field, we summarize the possible forward-looking directions and obstacles.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142409087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction: Enhanced charge transport from Pd-doping in CsPbBr3 quantum dots for efficient photoelectrocatalytic water splitting 更正：CsPbBr3量子点中掺杂钯可增强电荷传输，实现高效光电催化水分离

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-09-24 DOI: 10.1039/D4TC90156H

Wenxiao Gong, Yulan Li, Yang Yang, Heng Guo and Xiaobin Niu

引用次数: 0

Thermal enhancement of the upconversion luminescence of Zn2+ ion-doped KYb(MoO4)2:Er3+ phosphors for multimode temperature sensing 热增强 Zn2+ 离子掺杂的 KYb(MoO4)2:Er3+ 磷光体的上转换发光，用于多模温度传感

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-09-19 DOI: 10.1039/D4TC02959C

Junshan Hu, Daobin Zhu, Yuxiang Wu, Keyu Guo, Changchun Ding, Rangrang Fan, Chunfeng Dong, Wei Jin and Yongtao Liu

{"title":"Thermal enhancement of the upconversion luminescence of Zn2+ ion-doped KYb(MoO4)2:Er3+ phosphors for multimode temperature sensing","authors":"Junshan Hu, Daobin Zhu, Yuxiang Wu, Keyu Guo, Changchun Ding, Rangrang Fan, Chunfeng Dong, Wei Jin and Yongtao Liu","doi":"10.1039/D4TC02959C","DOIUrl":"https://doi.org/10.1039/D4TC02959C","url":null,"abstract":"Pure phase KYb(MoO4)2:Er3+ phosphors doped with different concentrations of Zn2+ ions were prepared by a high temperature solid phase method. Based on XRD refinement results, some Yb3+ ions and K+ ions were replaced by Zn2+ ions. The upconversion luminescence (UCL) spectra of 980 nm laser excitation show that KYb(MoO4)2:Er3+ emits single near-infrared light and KYb(MoO4)2:Er3+,Zn2+ presents multi-modal UCL emission. The optimal doping concentration of Zn2+ ions was 0.08. Meanwhile, the energy transfer process of UCL was revealed by optical characterization methods. The temperature sensing characteristics of the phosphor were tested in the temperature range of 298–523 K. The phosphor exhibits thermal enhancement. Variable temperature XRD from 298 K to 523 K resulted in a slight enlargement and expansion in the refinement of cell parameters and volume. This indicates that thermal enhancement is attributed to the lattice structure distortion caused by doping of Zn2+ ions, not caused by phase transformation and negative thermal expansion. In addition, the relative and absolute sensitivities of the phosphor were 1.1% K−1 at 298 K and 1.73% K−1 at 348 K, respectively. This provides a new approach and opens up new avenues for the theory of thermally enhanced luminescence.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0