Journal of Materials Chemistry C最新文献

Cephalopod chromatophores contain photosensitizing nanostructures that may facilitate light sensing and signaling in the skin† 头足类动物的色素体含有光敏纳米结构，可以促进皮肤中的光感应和信号传导

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-06 DOI: 10.1039/D4TC04333B

Taehwan Kim, Duncan Q. Bower and Leila F. Deravi

引用次数: 0

A flexible protective electronic skin with tunable anti-impact and thermal insulation properties for potential rescue applications† 一种灵活的保护性电子皮肤，具有可调的抗冲击和隔热性能，适用于潜在的救援应用†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-30 DOI: 10.1039/D4TC04519J

Wenhui Wang, Sheng Wang, Zimu Li, Jianyu Zhou, Shuai Liu, Tingting Xuan, Junshuo Zhang and Xinglong Gong

{"title":"A flexible protective electronic skin with tunable anti-impact and thermal insulation properties for potential rescue applications†","authors":"Wenhui Wang, Sheng Wang, Zimu Li, Jianyu Zhou, Shuai Liu, Tingting Xuan, Junshuo Zhang and Xinglong Gong","doi":"10.1039/D4TC04519J","DOIUrl":"https://doi.org/10.1039/D4TC04519J","url":null,"abstract":"Flexible structural materials with multifunctional protective properties and intelligent sensing characteristics have garnered significant attention in recent research. Here, a sandwich-structured flexible protective electronic skin (FPES) was fabricated to provide synergistic protection against force and heat. The FPES, with dimensions of 25 × 25 × 11 mm3, demonstrated good impact resistance, effectively reducing impact force from 7.06 kN to 1.60 kN. Additionally, it exhibited impressive thermal insulation, maintaining a minimum upper surface temperature of 53.2 °C after being exposed on a 100 °C base plate for 30 minutes. Notably, owing to its shape memory performance, the impact and thermal protection capabilities of FPES could be dynamically adjusted by varying its thickness and area. Beyond its protective functions, FPES also served as an active feedback material with sensing capabilities for monitoring impacts and high temperatures. To illustrate its practical application, an integrated impact-heat alarm system was developed, showing its potential use in disaster rescue operations.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 3","pages":" 1146-1156"},"PeriodicalIF":5.7,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced functional inorganic materials for information technology and applications 用于信息技术和应用的先进功能无机材料

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-18 DOI: 10.1039/D4TC90207F

Xuebin Wang, Haibo Zeng and Zhiguo Xia

引用次数: 0

Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances 基于二氧化钒的记忆电阻器作为大脑启发计算的人工神经元：对当前进展的看法

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-13 DOI: 10.1039/D4TC03347G

K. Gurukrishna, Aditya Uday Kamat and Shikhar Misra

{"title":"Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances","authors":"K. Gurukrishna, Aditya Uday Kamat and Shikhar Misra","doi":"10.1039/D4TC03347G","DOIUrl":"https://doi.org/10.1039/D4TC03347G","url":null,"abstract":"VO2 stands out as a unique material manifesting intrinsically coupled electronic and phase transitions. The novel electric field-activated phase transition behaviours, along with the high-resistance change rate, ultrarapid response, and low-power consumption in VO2 memristors, provide a nonlinear dynamical response to input signals, as recommended to design neuromorphic circuit components. The present review focuses on the recent advancements in VO2 memristor devices and the design of these devices into neuromorphic circuitry towards emulating the synaptic function, which facilitates a variety of applications in sensing, oscillators for spike coding, mechanoreceptors, and anthropomorphic neurorobotics, etc. A detailed picture is presented starting from the deposition of VO2 films to the memristor circuits employing VO2-based devices, which contribute to the development of hardware neural network systems with brain-inspired algorithms, enabling the application of neuromorphic computing.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 3","pages":" 1013-1035"},"PeriodicalIF":5.7,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142994000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction: Facile synthesis of silicon quantum dots with photoluminescence in the near-ultraviolet to violet region via wet oxidation 修正：通过湿式氧化，在近紫外到紫外区域具有光致发光的硅量子点的简单合成

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-12 DOI: 10.1039/D4TC90203C

Yizhou He, Qianxi Hao, Chi Zhang, Qi Wang, Wenxin Zeng, Jiamin Yu, Xue Yang, Shaorong Li, Xiaowei Guo and Serguei K. Lazarouk

引用次数: 0

2024 Journal of Materials Chemistry Lectureship winner: Raphaële Clément, University of California, Santa Barbara, United States 2024年《材料化学杂志》讲师奖得主：Raphaële classment，加州大学圣巴巴拉分校，美国

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-11 DOI: 10.1039/D4TC90196G

引用次数: 0

2024 Journal of Materials Chemistry Lectureship runners-up: Maxx Arguilla, University of California, Irvine, United States, and Phillip Milner, Cornell University, United States 2024年《材料化学杂志》讲座亚军：美国加州大学欧文分校的Maxx Arguilla和美国康奈尔大学的Phillip Milner

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-11 DOI: 10.1039/D4TC90197E

引用次数: 0

Centimeter-scale Gua3SbBr6 single crystals for white light-emitting diodes enabled by inhibition of multi-site nucleation† 厘米级的Gua3SbBr6单晶用于白光发光二极管，抑制多位点成核†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-10 DOI: 10.1039/D4TC03776F

Yongjiang Dou, Zirui Liu, Quanzhen Huang, Tiantian Shi, Sheng Wang and Xuyong Yang

{"title":"Centimeter-scale Gua3SbBr6 single crystals for white light-emitting diodes enabled by inhibition of multi-site nucleation†","authors":"Yongjiang Dou, Zirui Liu, Quanzhen Huang, Tiantian Shi, Sheng Wang and Xuyong Yang","doi":"10.1039/D4TC03776F","DOIUrl":"https://doi.org/10.1039/D4TC03776F","url":null,"abstract":"High-quality single crystals (SCs) are crucial for advanced photoelectronic devices like light-emitting diodes (LEDs), lasers, and photodetectors. Zero-dimensional organic antimony-based metal halides, such as Gua3SbX6, offer great promise due to their unique structure and high photoluminescence quantum yield (PLQY). However, producing large-sized SCs remains challenging, because the multi-site nucleation leads to parasitic crystal formation, which consumes the abundant precursors. In this study, we utilized zinc acetate as an additive to cultivate centimeter-scale Gua3SbBr6 SCs. Zn2+ ions robustly coordinate with Br− ions, effectively retarding their participation in the SC seed formation and suppressing multi-site nucleation. These optimized SCs were used to fabricate a white light-emitting diode (WLED) with a high color rendering index (CRI) of 89 and a maximum power efficiency of 48.6 lm/W, significantly outperforming conventional WLEDs. This study not only deepens our understanding of crystal growth dynamics but also addresses a key challenge, paving the way for high-performance, eco-friendly photoelectronic devices using Gua3SbBr6 SCs.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 3","pages":" 1130-1137"},"PeriodicalIF":5.7,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors† α-GeTe铁电半导体晶体管的量子输运模拟

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-09 DOI: 10.1039/D4TC04706K

Qiang Li, Zongmeng Yang, Xingyue Yang, Wenjing Zhou, Chen Yang, Xiaotian Sun, Shibo Fang and Jing Lu

{"title":"Quantum transport simulation of α-GeTe ferroelectric semiconductor transistors†","authors":"Qiang Li, Zongmeng Yang, Xingyue Yang, Wenjing Zhou, Chen Yang, Xiaotian Sun, Shibo Fang and Jing Lu","doi":"10.1039/D4TC04706K","DOIUrl":"https://doi.org/10.1039/D4TC04706K","url":null,"abstract":"Ferroelectric semiconductor transistor is a newly proposed device that uses ferroelectric semiconductors as channel materials for integrated memory and computation. Currently, the main challenge in advancing ferroelectric semiconductor transistors (FeS-FETs) is finding ferroelectric channel materials that balance high performance with industrial production feasibility. In this work, we predict the performance of α-GeTe, a quasi-two-dimensional ferroelectric semiconductor with excellent compatibility with Si-based substrates, as a FeS-FET by ab initio quantum transport simulation. When taking negative capacitance technology and underlap structure into account, we find that α-GeTe ferroelectric semiconductor transistors can meet the international technology roadmap for semiconductors for high-performance standards for industrial-grade chip logic operations with a 5-nm channel length, and achieve a ferroelectric switch ratio of 228 at zero gate voltage. The memory window (0.9 V) of the 5-nm gate-length monolayer α-GeTe FeS-FETs is three times larger than that (0.3 V) of the α-In2Se3 ferroelectric semiconductor transistor. Our work suggests that α-GeTe is a strong candidate for the future industrial fabrication of FeS-FETs.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 2","pages":" 568-577"},"PeriodicalIF":5.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fluorescence modulation of pyridinium betaines: a mechanofluorochromic investigation† 甜菜碱吡啶的荧光调制：机械荧光变色研究

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-12-04 DOI: 10.1039/D4TC04290E

Peter W. McDonald, Jingjing Xu, Dale R. Lonsdale, Isabelle Jones, Benjamin Poggi, Rosalind P. Cox, Stéphane Aloise, Andrew D. Scully, Clémence Allain, Laurence Bodelot, Stephen A. Moggach, Toby D. M. Bell, Rémi Métivier, Sebastian G. B. Furness, Lars Goerigk and Chris Ritchie

{"title":"Fluorescence modulation of pyridinium betaines: a mechanofluorochromic investigation†","authors":"Peter W. McDonald, Jingjing Xu, Dale R. Lonsdale, Isabelle Jones, Benjamin Poggi, Rosalind P. Cox, Stéphane Aloise, Andrew D. Scully, Clémence Allain, Laurence Bodelot, Stephen A. Moggach, Toby D. M. Bell, Rémi Métivier, Sebastian G. B. Furness, Lars Goerigk and Chris Ritchie","doi":"10.1039/D4TC04290E","DOIUrl":"https://doi.org/10.1039/D4TC04290E","url":null,"abstract":"A reversible change in a material's fluorescence spectrum on the application of force is known as mechanofluorochromism (MFC) and is a well-established field of study. However, the mechanism(s) responsible for the chromism may be different for each new material and it is important to elucidate these for many reasons, including the rational design of new analogues with targeted properties. Herein, the photophysical properties and mechanistic understanding of two MFC pyridinium betaines are reported. The emission sensitivity is explained by the coexistence of crystalline and amorphous phases after the application of mechanical force, with increased conformational flexibility in the amorphous phase facilitating red-shifts in emission. This explanation is supported by evidence from a range of spectroscopic techniques, including electron diffraction (ED) and fluorescence lifetime imaging microscopy (FLIM) mapping, two techniques that have, to the best of our knowledge, not been applied in the field of MFC to mechanically ground particles. For one of the compounds, ED on ground microcrystallites shows unambiguously that the same crystalline phase is retained after grinding, along with an amorphous contribution, providing direct evidence for the crystalline-amorphous mechanism, and the presence of these two phases is further supported by FLIM mapping. We envision these techniques will be highly instructive for the analysis of similar materials.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19371-19385"},"PeriodicalIF":5.7,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0