Journal of Materials Chemistry C最新文献

Molecular spectroscopies with semiconductor metasurfaces: towards dual optical/chemical SERS. 半导体超表面的分子光谱：迈向双光学/化学SERS。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-22 DOI: 10.1039/d4tc05420b

Alexander Berestennikov, Haiyang Hu, Andreas Tittl

引用次数: 0

Correction: Bimetal-decorated resistive gas sensors: a review 修正：双金属装饰电阻式气体传感器：回顾

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-12 DOI: 10.1039/D5TC90066B

Ka Yoon Shin, Yujin Kim, Ali Mirzaei, Hyoun Woo Kim and Sang Sub Kim

引用次数: 0

Recent advances in single-frequency fiber lasers based on saturable absorbers 基于可饱和吸收体的单频光纤激光器的最新进展

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-08 DOI: 10.1039/D4TC05508J

Yiyu Gan, Feng Zhu, Shihuai Li and Qiao Wen

{"title":"Recent advances in single-frequency fiber lasers based on saturable absorbers","authors":"Yiyu Gan, Feng Zhu, Shihuai Li and Qiao Wen","doi":"10.1039/D4TC05508J","DOIUrl":"https://doi.org/10.1039/D4TC05508J","url":null,"abstract":"Single-frequency fiber lasers (SFFLs) have excellent application prospects owing to their narrow linewidth, which leads to a long coherence distance and ultra-low noise. At present, the progress of next-generation optical communication, LiDAR and distributed fiber sensing has higher requirements for the linewidth and output power of SFFLs. Methods for narrowing the laser linewidth and improving the output power of SFFLs are current research hotspots. Unpumped gain fibers and low-dimensional materials have unique optoelectronic and nonlinear optical properties, which enable their wide use as saturable absorbers (SAs). Utilizing the saturable absorption effect, SAs can be used as excellent narrowband filters in SFFLs to further narrow the output linewidth and increase the output power. This review overviews the operational mechanism and techniques for measuring transient Bragg gratings (TBGs) and outlines the development of both linewidth and output power of SFFLs based on SAs, including unpumped doped fibers and low-dimensional materials. The pros and cons of SA-based SFFLs are summarized, and the future direction of these lasers is envisioned.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 9973-9991"},"PeriodicalIF":5.7,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Covalent carbon nanodot-azobenzene hybrid photoswitches: the impact of meta/para connectivity and sp³ spacer on photophysical properties. 共价碳纳米点-偶氮苯杂化光开关：间/对连通性和sp3间隔剂对光物理性质的影响。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-07 DOI: 10.1039/d5tc00116a

Paul P Debes, Dominic Schatz, Yagmur Aydogan-Sun, Juan Pablo Martínez, Michal Langer, Janis Hessling, Jaime Gallego, Enzo Menna, Bernd M Smarsly, Monika Schönhoff, Silvio Osella, Josef Wachtveitl, Hermann A Wegner, Teresa Gatti

{"title":"Covalent carbon nanodot-azobenzene hybrid photoswitches: the impact of meta/para connectivity and sp3 spacer on photophysical properties.","authors":"Paul P Debes, Dominic Schatz, Yagmur Aydogan-Sun, Juan Pablo Martínez, Michal Langer, Janis Hessling, Jaime Gallego, Enzo Menna, Bernd M Smarsly, Monika Schönhoff, Silvio Osella, Josef Wachtveitl, Hermann A Wegner, Teresa Gatti","doi":"10.1039/d5tc00116a","DOIUrl":"10.1039/d5tc00116a","url":null,"abstract":"The covalent surface functionalization of carbon nanodots (CNDs) can facilitate the design and development of nanocarbon hybrids with photoswitching properties, which can be applied in a wide range of applications, including sensing, optoelectronics, and even bio-applications. This study underscores the potential utilization of these hybrids as photoresponsive materials, for potential application in optostimulation. In this study, we examine the characteristics of covalent azobenzene-functionalized CNDs, with a particular emphasis on the impact of meta and para connectivity and the additional introduction of a glycine spacer. The CND synthesis process comprises a bottom-up microwave condensation of ethylenediamine and citric acid. Amide coupling to azobenzenes is confirmed through NMR diffusion-ordered spectroscopy and diffusion decay analysis. A comprehensive investigation is conducted into the size and optical properties of the resulting hybrids. Moreover, time-dependent density functional theory computations are employed to understand absorption spectra and charge transfer events. Furthermore, advanced optical characterisation is utilised to examine energy/charge transfer between the constituents. Finally, the switching properties, fatigue resistance, and half-life of the hybrids are studied to evaluate their performance for prospective applications like in optostimulation.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" ","pages":""},"PeriodicalIF":5.7,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12076116/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144092053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of machining-generated residual stress on the properties of single crystal piezoelectric layers in high-frequency ultrasonic transducers† 加工残余应力对高频超声换能器中单晶压电层性能的影响

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-06 DOI: 10.1039/D5TC00779H

Cong Luo, Chaorui Qiu, Yang Li, Mingwen Wang, Yi Quan and Zhuo Xu

{"title":"The effect of machining-generated residual stress on the properties of single crystal piezoelectric layers in high-frequency ultrasonic transducers†","authors":"Cong Luo, Chaorui Qiu, Yang Li, Mingwen Wang, Yi Quan and Zhuo Xu","doi":"10.1039/D5TC00779H","DOIUrl":"https://doi.org/10.1039/D5TC00779H","url":null,"abstract":"During the mechanical thinning process for preparing ultrathin (approximately 100 μm) piezoelectric single crystals (SC) for high-frequency ultrasonic transducers, a significant degradation in performance has been observed in Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) SC sheets. Experimental results indicate that this degradation is primarily due to machining-generated residual stress during the thinning process. Upon the removal of mechanical force, residual stress is induced within the PIN–PMN–PT SC sheet, leading to a decline in the dielectric, piezoelectric, and electromechanical properties. The residual stress significantly impacts both external surface roughness and internal domain structure of the SC sheet, directly affecting its electrical performance. Additionally, the residual stress exacerbates electrical fatigue in the PIN–PMN–PT SC sheet during practical use. To address these issues, high-temperature annealing following mechanical thinning has been demonstrated to effectively eliminate or minimize residual stress, thereby substantially mitigating its adverse effects. This process enhances the electrical properties, thermal stability, and resistance to electrical fatigue of the SC sheet. This study offers insights into optimizing the performance optimization of high-performance SC sheets for improving the performance of high-frequency transducers.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 19","pages":" 9483-9493"},"PeriodicalIF":5.7,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasmon-enhanced organic field effect transistors 等离子体增强有机场效应晶体管

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-05-03 DOI: 10.1039/D4TC04595E

Navneet Kumar, Howe R. J. Simpson, Md Masud Rana and Karthik Shankar

{"title":"Plasmon-enhanced organic field effect transistors","authors":"Navneet Kumar, Howe R. J. Simpson, Md Masud Rana and Karthik Shankar","doi":"10.1039/D4TC04595E","DOIUrl":"https://doi.org/10.1039/D4TC04595E","url":null,"abstract":"The low cost and ease of fabrication of organic electronics is often overlooked due to their lower performance parameters and poor stability under atmospheric conditions. Thus, steps need to be taken to improve technology in meaningful ways to compete with their inorganic counterparts. In this context, the integration of plasmonic materials and nanostructures into the channel or gate dielectric of organic field transistors (OFETs) enables improvements in the performance and function of phototransistors, transistor-based optical memory devices, organic light emitting transistors (OLETs) and organic electrochemical transistors (OECTs). Plasmonic nanoparticles have been used to fabricate the floating gate of FET memory devices and generate adaptable shifts in the threshold voltage. The detection sensitivity of OECTs was enhanced by the local electromagnetic field enhancement effect and improved electron transfer effect associated with gold nanoparticles integrated into the OECT. Schottky barrier phototransistors integrated with chiral plasmonic nanoparticles enable detection of circularly polarized light. In OLETs, integration with surface plasmons improves local electroluminescence yields as well as the directionality of emission and the light outcoupling efficiency. Graphene plasmons achieved strong confinement of THz radiation and thus enabled gated terahertz detectors.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 9951-9972"},"PeriodicalIF":5.7,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc04595e?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solvatochromic multi-colour fluorescence driven by thiol-type ESIPT in a 1-mercapto-naphthaldiimide compound† 巯基型ESIPT驱动的1-巯基萘二亚胺化合物的溶剂致变色多色荧光

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-04-30 DOI: 10.1039/D5TC01389E

Yuka Ando, Marina Doi, Haonan Liu and Shinji Ando

引用次数: 0

SnO/β-Ga2O3 heterojunction barrier Schottky diodes for decreased reverse leakage current and improved breakdown voltage† SnO/β-Ga2O3异质结势垒肖特基二极管降低反向漏电流和提高击穿电压†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-04-28 DOI: 10.1039/D5TC01355K

Jun Wang, Xin-Wang Yao, Xiu-Xing Xu, Xia Wu, Jun-Han Qian, Xiu-Juan Wang, Yan-Fang Liu, Chun-Yan Wu and Lin-Bao Luo

{"title":"SnO/β-Ga2O3 heterojunction barrier Schottky diodes for decreased reverse leakage current and improved breakdown voltage†","authors":"Jun Wang, Xin-Wang Yao, Xiu-Xing Xu, Xia Wu, Jun-Han Qian, Xiu-Juan Wang, Yan-Fang Liu, Chun-Yan Wu and Lin-Bao Luo","doi":"10.1039/D5TC01355K","DOIUrl":"https://doi.org/10.1039/D5TC01355K","url":null,"abstract":"In this article, we report a vertical β-Ga2O3 heterojunction barrier Schottky (HJBS) diode fabricated by using reactive magnetron sputtering to selectively grow a circular p-type SnO film array. Compared to its Schottky barrier diode (SBD) counterpart, the HJBS diode shows a slightly increased turn-on voltage (Von) and specific on-resistance (Ron,sp), but its breakdown voltage (BV) is greatly improved due to the decreased electric field crowding effect at the anode edge as well as the lateral surface depletion effect of the SnO/β-Ga2O3 p–n junction. A BV of 1375 V and a Baliga's power figure of merit (PFOM) of 0.37 GW cm−2 achieved for the device with a spacing of 3 μm are expected to be improved by further shrinking the spacing. Meanwhile, the reverse leakage current (JR) is lower than 2 μA cm−2 (the detection limit of the system) even at a reverse bias (VR) of 1250 V. The SnO/β-Ga2O3 HJBS diodes show great promise for use in future β-Ga2O3 power electronic devices with high PFOM, while maintaining a suppressed reverse leakage current.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 9992-9996"},"PeriodicalIF":5.7,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design principles of electroluminescent devices based on different electrodes and recent advances toward their application in textiles 基于不同电极的电致发光器件的设计原理及其在纺织品中的应用进展

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-04-28 DOI: 10.1039/D5TC00209E

Qiyuan Xie, Yijun Yao, Lei Wu, Ying Xue, Guodong Shen, Changsheng Guo, Bin Du, Hailiang Wu and Yang Jin

{"title":"Design principles of electroluminescent devices based on different electrodes and recent advances toward their application in textiles","authors":"Qiyuan Xie, Yijun Yao, Lei Wu, Ying Xue, Guodong Shen, Changsheng Guo, Bin Du, Hailiang Wu and Yang Jin","doi":"10.1039/D5TC00209E","DOIUrl":"https://doi.org/10.1039/D5TC00209E","url":null,"abstract":"Alternating current electroluminescent (ACEL) devices have become an important direction for the development of visualized smart wearable e-textiles due to their advantages of light weight, flexibility, easy integration, and convenient processing. The electrode layer is a crucial component of ACEL devices, providing the necessary electric field for the dielectric and luminescent layers, and facilitating the stable transport and recombination of electrons and holes in the luminescent layer. Herein, the structural design principles and luminescence mechanisms of ACEL are reviewed, and the newest research and remarkable results of metal-, carbon-, and ion-gel-based electrodes are introduced. This review emphasizes that optimizing the conductive pathways of electrodes, enhancing the interfacial roles of functional layers, and adjusting the thickness and microstructure of layers are crucial for developing high-brightness and stable ACEL devices. Also, increasing the electric field strength and selecting high dielectric constants are identified as key factors. On this basis, the recent progress of ACEL fibers, films, and fabrics in textiles is highlighted. Finally, the challenges and growth encountered in the development of ACEL devices are prospected, considering aspects such as voltage, luminous brightness, color, sensitivity, comfort, and large-scale processing.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 18","pages":" 8934-8957"},"PeriodicalIF":5.7,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143925372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A flexible pressure sensor array based on an ionic gel for pulse detection† 基于离子凝胶的脉冲检测柔性压力传感器阵列

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-04-25 DOI: 10.1039/D5TC00325C

Tong Song, Jie Liang, Xiling Shi and Zhidong Zhang

{"title":"A flexible pressure sensor array based on an ionic gel for pulse detection†","authors":"Tong Song, Jie Liang, Xiling Shi and Zhidong Zhang","doi":"10.1039/D5TC00325C","DOIUrl":"https://doi.org/10.1039/D5TC00325C","url":null,"abstract":"Flexible pressure sensors are widely applied in tactile sensing, gait testing, and wearable devices due to their flexibility and repeatability. However, measuring weaker signals needs ultrahigh sensitivity and an extensive detection range. Herein, we propose a novel ionic–electronic sensor featuring a cavity structure made up of Ag electrodes, a PDMS space layer, and an ionic gel. The latter was created by combining polyvinyl alcohol (PVA), chitosan (CS), and 1-ethyl-3-methylimidazole chloride (ionic liquid) after three freeze–thaw cycles. This sensor demonstrated remarkable maximum sensitivity of up to 48 584.56 kPa−1 within the range of 1–10 kPa, a broad pressure range of 0.1–200 kPa, and excellent repeatability over 1000 loading–unloading cycles. Owing to a capacitive effect, a sensor and array sensor were used to detect pulse signals and space pressure distribution, respectively. The signals of each channel of the array sensor were collected through a data-acquisition system. The main peak of the pulse wave was represented by a histogram, and a three-dimensional (3D) pulse wave shape was reconstructed. The 3D pulse wave provides the possibility for the extraction of waveform characteristics. In conclusion, our sensor could be used in portable wearable and flexible smart electronics.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 10356-10366"},"PeriodicalIF":5.7,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0