Nano Letters最新文献

High-Q Resonance Engineering in Momentum Space for Highly Coherent and Rainbow-Free Thermal Emission

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-21 DOI: 10.1021/acs.nanolett.4c06565

Keren Wang, Kaili Sun, Qi Ding, Lingxiao Zeng, Jing Du, Zhanghua Han, Lujun Huang, Wei Wang

引用次数: 0

Polarization-Independent Enhancement of Third-Harmonic Generation Empowered by Doubly Degenerate Quasi-Bound States in the Continuum

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-21 DOI: 10.1021/acs.nanolett.5c00146

Tingting Liu, Meibao Qin, Jumin Qiu, Xu Tu, Huifu Qiu, Feng Wu, Tianbao Yu, Qiegen Liu, Shuyuan Xiao

引用次数: 0

DNA Logic Circuit Based on a Toehold-Independent Strand Displacement Reaction Network

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-21 DOI: 10.1021/acs.nanolett.4c05735

Junlan Liu, Qing Zhang

引用次数: 0

Organic Synaptic Transistors Based on C8-BTBT/PMMA/PbS QDs for UV to NIR Face Recognition Systems.

IF 9.6 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.5c00032

Tianyang Feng, Hang Xu, Yafen Yang, Xuemeng Hu, Tianyu Wang, Hao Zhu, Qingqing Sun, David Wei Zhang, Jialin Meng, Lin Chen

引用次数: 0

A Paste-like Polymeric Resist with High Thermal Endurance for Vapor-Phase Bottom-Up Fabrication

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.4c06189

Chun Li, Jiaxun Yao, Rui Xia, Haochuan Wang, Yan Shao, Ming Chen, Zixin Zhang, Lizhi Yan, Paddy Kwok Leung Chan, Xing Cheng, Yanhao Yu

{"title":"A Paste-like Polymeric Resist with High Thermal Endurance for Vapor-Phase Bottom-Up Fabrication","authors":"Chun Li, Jiaxun Yao, Rui Xia, Haochuan Wang, Yan Shao, Ming Chen, Zixin Zhang, Lizhi Yan, Paddy Kwok Leung Chan, Xing Cheng, Yanhao Yu","doi":"10.1021/acs.nanolett.4c06189","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06189","url":null,"abstract":"Bottom-up microfabrication based on vapor-phase depositions (e.g., sputtering and atomic layer deposition) requires patterning resists that can endure the parasitic thermal treatment during deposition. Conventional polymeric resists encounter removability issues due to thermally induced carbonization at the interface, while emerging molecular resists face challenges of hermeticity and shape retention in bulk. Here, we introduce a paste-like patterning resist with high interfacial and bulk thermal stability, which leads to multifaceted processing characteristics: this resist is hermetic and shape-preservable during the deposition and easily removable after the deposition. Based on a wetting-driven self-assembly process, we develop a nonphotolithographic patterning procedure for this paste resist and demonstrate high-accuracy and defect-free bottom-up patterning of dielectrics, semiconductors, and conductors. Beyond vapor-phase depositions, this resist is compatible with most manufacturing techniques, providing fruitful implications for bottom-up microfabrication.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"21 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CO2 Conversion in Cu–Pd Based Disordered Network Metamaterials with Ultrasmall Mode Volumes

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.4c05426

Jelena Wohlwend, Oliver Wipf, David Kiwic, Siro Käch, Benjamin Mächler, Georg Haberfehlner, Ralph Spolenak, Henning Galinski

引用次数: 0

Chameleon-Inspired Photoelectric-Driven Multifunctional Memristors Based on Polyoxometalate for an Adaptive-Recognition-Tuning System.

IF 9.6 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.5c00383

Wentong Li, Yanyun Ren, Wenhao Yang, Junjie Ba, Yizhan Wang, Zhe Li, Yang Li, Zhongrui Wang, Liang Shen, Jiaqi Zhang, Lijun Zhang

{"title":"Chameleon-Inspired Photoelectric-Driven Multifunctional Memristors Based on Polyoxometalate for an Adaptive-Recognition-Tuning System.","authors":"Wentong Li, Yanyun Ren, Wenhao Yang, Junjie Ba, Yizhan Wang, Zhe Li, Yang Li, Zhongrui Wang, Liang Shen, Jiaqi Zhang, Lijun Zhang","doi":"10.1021/acs.nanolett.5c00383","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00383","url":null,"abstract":"Integrating the color-tuning ability of natural organisms with memory functions into a single device is crucial for developing biomimetic intelligent systems. Despite significant efforts, a gap remains between the existing \"passive and integrated\" tuning methods and the \"active and independent\" strategies observed in organisms. Here, we propose a multifunctional memristor combining programmable color modulation and brain-inspired functions, fabricated using polyoxometalates, H4PMo11VO40. The device exhibits adaptive, multidimensional, synchronized responses to electrical and light stimuli. Inspired by the dual regulatory mechanisms of chameleons, the device simulates their response, learning, adaptability, and communication abilities. An array replicates dynamic transformations in chameleon skin under emotional and environmental conditions, exhibiting precise regulation and responsive capabilities. A neural network establishes a chameleon occlusion region segmentation system with 97.1% recognition accuracy. Iterative fine-tuning via low-amplitude voltage showcases recognition, feedback, and self-regulation functions. Our work advances multifunction biomimetic systems by providing insights into integrating adaptive functionalities.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":" ","pages":""},"PeriodicalIF":9.6,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143456278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning the Stability of DNA Tetrahedra with Base Stacking Interactions

IF 10.8 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.4c06548

Jibin Abraham Punnoose, Dadrian Cole, Tristan Melfi, Vinod Morya, Bharath Raj Madhanagopal, Alan A. Chen, Sweta Vangaveti, Arun Richard Chandrasekaran, Ken Halvorsen

引用次数: 0

Ultrahigh Negative Longitudinal Piezoelectricity in Rhombohedral GeTe and Its Group IV-VI Analogues.

IF 9.6 1区材料科学

Nano Letters Pub Date : 2025-02-20 DOI: 10.1021/acs.nanolett.4c06671

Yang Liu, Wei Wang, Zhengjie Wang, Chen Si

{"title":"Ultrahigh Negative Longitudinal Piezoelectricity in Rhombohedral GeTe and Its Group IV-VI Analogues.","authors":"Yang Liu, Wei Wang, Zhengjie Wang, Chen Si","doi":"10.1021/acs.nanolett.4c06671","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06671","url":null,"abstract":"Conventional piezoelectric materials typically exhibit positive longitudinal piezoelectric coefficients, yet recent studies have identified exceptions with negative piezoelectric responses. Using density functional theory, we demonstrate for the first time that rhombohedral GeTe (r-GeTe) possesses an ultrahigh negative piezoelectric strain coefficient (d33) of -70.87 pC/N, surpassing all previously reported negative piezoelectric materials. This phenomenon arises from the \"quasi-layered\" structure of r-GeTe, comprising alternating strong and weak bonds, which induces a pronounced negative internal-strain contribution and an exceptionally low elastic constant. We further extend our investigation to other IV-VI rhombohedral materials, identifying GeS, GeSe, and SiTe as promising candidates for ultrahigh negative piezoelectricity. In contrast to prior reports, where negative piezoelectricity stems from a negative clamped-ion term that dominates a small positive internal-strain contribution, our findings propose a new material design strategy for large negative piezoelectricity by introducing a significantly negative internal strain, along with the negative clamped-ion term.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":" ","pages":""},"PeriodicalIF":9.6,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143456280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heterostructure Nanoscintillator for Matching Radiation Absorbing Layers with Fast Light-Emitting Layers.

IF 9.6 1区材料科学

Nano Letters Pub Date : 2025-02-19 DOI: 10.1021/acs.nanolett.4c05353

Orr Be'er, Avner Shultzman, Rotem Strassberg, Georgy Dosovitskiy, Noam Veber, Roman Schuetz, Charles Roques-Carmes, Ido Kaminer, Yehonadav Bekenstein

{"title":"Heterostructure Nanoscintillator for Matching Radiation Absorbing Layers with Fast Light-Emitting Layers.","authors":"Orr Be'er, Avner Shultzman, Rotem Strassberg, Georgy Dosovitskiy, Noam Veber, Roman Schuetz, Charles Roques-Carmes, Ido Kaminer, Yehonadav Bekenstein","doi":"10.1021/acs.nanolett.4c05353","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c05353","url":null,"abstract":"Fast-emitting scintillators are essential for advanced diagnostic techniques, yet many suffer from low radiation attenuation. This trade-off is particularly pronounced in polymer scintillators, which, despite their fast emission, exhibit low density and low atomic numbers, limiting the radiation attenuation factor, resulting in low detection efficiency. Here, we overcome this limitation by creating a heterostructure scintillator of alternating nanometric layers, combining fast light-emitting polymer scintillator layers and transparent stopping layers with a high radiation attenuation factor. The nanolayer thicknesses are tuned to optimize the penetration depth of recoil electrons in active emissive layers, maximizing the conversion of X-rays to visible light. This design increases light output by up to 1.5 times and enhances imaging resolution by a factor of 2 compared to homogeneous polymer scintillators due to the ability to use thinner samples. These results demonstrate the potential of heterostructure scintillators as next-generation detector materials, overcoming the limitations of homogeneous scintillators.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":" ","pages":""},"PeriodicalIF":9.6,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143447429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0