IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565847

Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu

{"title":"An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy","authors":"Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu","doi":"10.1109/TNANO.2025.3565847","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565847","url":null,"abstract":"Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"264-276"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach 基于fdsoi的可重构场效应管：铁电方法

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565720

Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang

引用次数: 0

Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks 记忆电阻细胞非线性网络中的随机模板和噪声动力学

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-30 DOI: 10.1109/TNANO.2025.3565887

Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff

{"title":"Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks","authors":"Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2025.3565887","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565887","url":null,"abstract":"Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"282-292"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-04-29 DOI: 10.1109/TNANO.2025.3565276

Amit Verma;Reza Nekovei;Daryoush Shiri

引用次数: 0

The Digital-Twin Modeling Method and Cross-Coupling Mechanism of Quartz Flexible Accelerometer 石英挠性加速度计的数字孪生建模方法及交叉耦合机理

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-04-25 DOI: 10.1109/JSEN.2025.3550722

Wanying Huang;Chunxi Zhang;Lailiang Song;Wei Zhang;Zhifang Zhu;Longjun Ran

{"title":"The Digital-Twin Modeling Method and Cross-Coupling Mechanism of Quartz Flexible Accelerometer","authors":"Wanying Huang;Chunxi Zhang;Lailiang Song;Wei Zhang;Zhifang Zhu;Longjun Ran","doi":"10.1109/JSEN.2025.3550722","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3550722","url":null,"abstract":"Quartz flexible accelerometers (QFAs) are widely applied in navigation systems. Although mechanical excitation is known to degrade the QFA performance and lower the positioning accuracy of the system, the mechanism underlying the dynamic performance deterioration remains obscure. Considering the etching process and assembly deviation, this article theoretically derives a pendulum cross-coupling mechanism and quantifies the transfer process of the structural error in the beams. The physical process of QFA is represented by a motion model, electrostatic and electromagnetic field models, and a signal transmission model. The QFA was analyzed through a digital-twin modeling approach incorporating finite element modeling and numerical analysis. The digital-twin model verified the error-transfer process of the beam structure and vibration experiments confirmed the specific effects of cross coupling. This article quantifies the dynamic accuracy degradation caused by interior errors in the QFA, providing guidance for optimizing the structure and assembly process of QFAs and promoting their environmental adaptability.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 9","pages":"14799-14809"},"PeriodicalIF":4.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices 《IEEE电子器件材料学报》特刊征文

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-04-22 DOI: 10.1109/JPHOTOV.2025.3556947

引用次数: 0

IEEE Journal of Photovoltaics Publication Information 电气和电子工程师学会光伏学报》出版信息

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-04-22 DOI: 10.1109/JPHOTOV.2025.3555916

引用次数: 0

IEEE Journal of Photovoltaics Information for Authors IEEE 光伏学报》作者信息

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-04-22 DOI: 10.1109/JPHOTOV.2025.3555921

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices 《IEEE电子设备学报》特刊征文

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-04-22 DOI: 10.1109/JPHOTOV.2025.3556949

引用次数: 0

Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices 征集《电气和电子工程师学会电子器件学报》主编提名

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-04-22 DOI: 10.1109/JPHOTOV.2025.3559276

引用次数: 0

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