{"title":"2024 Index IEEE Transactions on Plasma Science Vol. 52","authors":"","doi":"10.1109/TPS.2025.3540183","DOIUrl":"https://doi.org/10.1109/TPS.2025.3540183","url":null,"abstract":"","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 12","pages":"1-142"},"PeriodicalIF":1.3,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10878384","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2024 Index IEEE Transactions on Nanotechnology Vol. 23","authors":"","doi":"10.1109/TNANO.2025.3537416","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3537416","url":null,"abstract":"","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"822-847"},"PeriodicalIF":2.1,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10869628","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2024 Index IEEE Open Journal of Nanotechnology Vol. 5","authors":"","doi":"10.1109/OJNANO.2025.3534518","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3534518","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"1-8"},"PeriodicalIF":1.8,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10852553","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the Dependability of Bidirectional Encoder Representations from Transformers (BERT) to Soft Errors","authors":"Zhen Gao;Ziye Yin;Jingyan Wang;Rui Su;Jie Deng;Qiang Liu;Pedro Reviriego;Shanshan Liu;Fabrizio Lombardi","doi":"10.1109/TNANO.2025.3531721","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3531721","url":null,"abstract":"Transformers are widely used in natural language processing and computer vision, and Bidirectional Encoder Representations from Transformers (BERT) is one of the most popular pre-trained transformer models for many applications. This paper studies the dependability and impact of soft errors on BERT implemented with different floating-point formats using two case studies: sentence emotion classification and question answering. Simulation by error injection is conducted to assess the impact of errors on different parts of the BERT model and different bits of the parameters. The analysis of the results leads to the following findings: 1) in both single and half precision, there is a Critical Bit (CB) on which errors significantly affect the performance of the model; 2) in single precision, errors on the CB may cause overflow in many cases, which leads to a fixed result regardless of the input; 3) in half precision, the errors do not cause overflow but they may still introduce a large accuracy loss. In general, the impact of errors is significantly larger in single-precision than half-precision parameters. Error propagation analysis is also considered to further study the effects of errors on different types of parameters and reveal the mitigation effects of the activation function and the intrinsic redundancy of BERT.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"73-87"},"PeriodicalIF":2.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout","authors":"Roopesh Singh;Shivam Verma","doi":"10.1109/OJNANO.2025.3531759","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3531759","url":null,"abstract":"Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct read and write paths that utilize a memristive variant of the ferroelectric field effect transistor (MFeFET) for data storage. Through a combination of experimentally calibrated models and TCAD-based mixed-mode simulations, the proposed MFeFET-based memory cell is demonstrated to achieve a non-destructive read operation and higher read current at low operating voltages. Furthermore, the memory cell demonstrates a 50% reduction in read latency compared to spin transfer torque (STT) magneto-resistive random-access memory (MRAM) technologies, positioning it as a highly efficient solution for next-generation non-volatile memory applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"27-34"},"PeriodicalIF":1.8,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10845186","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Implications of Dielectric Phases in Ferroelectric HfO$_{2}$ Films on the Performance of Negative Capacitance FETs","authors":"Mayuri Sritharan;Hyunjae Lee;Michael Spinazze;Youngki Yoon","doi":"10.1109/TNANO.2025.3531552","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3531552","url":null,"abstract":"Non-homogeneous orthorhombic phase in doped ferroelectric (FE) HfO<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> film presents challenges towards the optimization and performance predictability of negative capacitance (NC) field-effect transistor (FET) performance. We set out to understand the consequences of these dielectric (DE) phases in doped FE-HfO<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> on steep-switching device performance through self-consistent quantum transport simulations. Firstly, we consider a fixed DE phase study to understand how the position, percentage, and number of phase components alter the switching characteristics. Then, to predict device performance variation, we conduct a statistical analysis using a large number of randomly distributed DE phase profiles. We find that DE phases positioned near the center of the potential barrier exert the most significant impact on device performance by lowering the top-of-the-barrier, while those closer to the drain have minimal influence on carrier transport and current. While DE phases in the FE layer degrade the subthreshold swing, they also favorably narrow the hysteretic window, which presents opportunities for optimization in logic devices. Through dimensional scaling and statistical analysis, we demonstrate how optimized performance can be achieved even with large variations in device performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"67-72"},"PeriodicalIF":2.1,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2024 Index IEEE Transactions on Device and Materials Reliability Vol. 24","authors":"","doi":"10.1109/TDMR.2025.3528093","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3528093","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 4","pages":"665-682"},"PeriodicalIF":2.5,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10841807","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}