{"title":"Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels","authors":"Amit Verma;Reza Nekovei;Daryoush Shiri","doi":"10.1109/TNANO.2025.3565276","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565276","url":null,"abstract":"We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the drain current is seen to decrease sharply at relatively higher gate voltages. The onset of NDR is tunable with device topology. The NDR mechanism in this work is due to the applied gate voltage, not the drain-source voltage, a feature which promises low-voltage application of this effect. The results are based on a self-consistent ensemble Monte Carlo charge-carrier transport model with an electrostatic solver that solves Gauss's law in integral form.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"260-263"},"PeriodicalIF":2.1,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wanying Huang;Chunxi Zhang;Lailiang Song;Wei Zhang;Zhifang Zhu;Longjun Ran
{"title":"The Digital-Twin Modeling Method and Cross-Coupling Mechanism of Quartz Flexible Accelerometer","authors":"Wanying Huang;Chunxi Zhang;Lailiang Song;Wei Zhang;Zhifang Zhu;Longjun Ran","doi":"10.1109/JSEN.2025.3550722","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3550722","url":null,"abstract":"Quartz flexible accelerometers (QFAs) are widely applied in navigation systems. Although mechanical excitation is known to degrade the QFA performance and lower the positioning accuracy of the system, the mechanism underlying the dynamic performance deterioration remains obscure. Considering the etching process and assembly deviation, this article theoretically derives a pendulum cross-coupling mechanism and quantifies the transfer process of the structural error in the beams. The physical process of QFA is represented by a motion model, electrostatic and electromagnetic field models, and a signal transmission model. The QFA was analyzed through a digital-twin modeling approach incorporating finite element modeling and numerical analysis. The digital-twin model verified the error-transfer process of the beam structure and vibration experiments confirmed the specific effects of cross coupling. This article quantifies the dynamic accuracy degradation caused by interior errors in the QFA, providing guidance for optimizing the structure and assembly process of QFAs and promoting their environmental adaptability.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 9","pages":"14799-14809"},"PeriodicalIF":4.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2025.3556947","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556947","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"509-510"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973167","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal of Photovoltaics Information for Authors","authors":"","doi":"10.1109/JPHOTOV.2025.3555921","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3555921","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973140","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2025.3556949","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556949","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"511-512"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973201","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2025.3559276","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3559276","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"514-514"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973176","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Call for Nominations for Editor-in-Chief IEEE Electron Device Letters","authors":"","doi":"10.1109/JPHOTOV.2025.3559282","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3559282","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"515-515"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ilya Yu. Bakeev;Aleksandr S. Klimov;Efim M. Oks;Aleksey A. Zenin
{"title":"Influence of Hollow Cathode Geometry on the Parameters of a Forevacuum Plasma Electron Source","authors":"Ilya Yu. Bakeev;Aleksandr S. Klimov;Efim M. Oks;Aleksey A. Zenin","doi":"10.1109/TPS.2025.3556416","DOIUrl":"https://doi.org/10.1109/TPS.2025.3556416","url":null,"abstract":"We present the results of our exploration of the influence of cathode cavity geometry on the parameters of a forevacuum-pressure plasma-cathode electron source based on a hollow cathode glow discharge with an extended plasma emission surface. We show that the electron emission current of the source depends nonmonotonically on the diameter of the cathode cavity output aperture. Increased electron emission current and electron beam power are obtained with optimized cathode cavity geometry, opening up possibilities for the use of the source in electron-beam technologies for the modification of high-temperature dielectric materials.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 5","pages":"922-927"},"PeriodicalIF":1.3,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue","authors":"","doi":"10.1109/JPHOTOV.2025.3556951","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556951","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"513-513"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973180","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}