IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-07-31 DOI: 10.1109/JSEN.2025.3577088

Anna V. Akinina;Ivan V. Egorov;Alexander S. Bugaev;Vadim M. Agafonov

{"title":"The Limiting Mechanism and Methods to Expand the Range of the Sensitivity Control in Six-Electrode MET Seismic Sensor","authors":"Anna V. Akinina;Ivan V. Egorov;Alexander S. Bugaev;Vadim M. Agafonov","doi":"10.1109/JSEN.2025.3577088","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3577088","url":null,"abstract":"A design of the six-electrode seismic sensor based on molecular-electronic technology (MET) was proposed earlier. The sensitive electrochemical cell of this sensor consists of two cathodes, two anodes, and two additional electrodes. The distinctive feature of the six-electrode sensor is the possibility to control the sensitivity by electrical signals. Meanwhile, the range in which the sensitivity could be changed is very limited. In this article, an investigation has been conducted into the mechanism constraining the sensitivity control range, employing a combination of experimental measurements and theoretical analysis. The findings reveal that the application of a positive voltage between the anodes and additional electrodes increases the conversion factor. This phenomenon arises from the generation of active ions on the anodes, concomitant with their consumption on the additional electrodes. As the applied voltage increases, the current flowing through additional electrodes becomes constrained by a diffusion factor, thereby restricting the production of active ions on the anodes. Methods of expanding the sensitivity control range involve increasing the surface area of additional electrodes and/or decreasing the surface area of the anodes.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 15","pages":"28576-28584"},"PeriodicalIF":4.3,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144758229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Sensors Council IEEE传感器委员会

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-07-31 DOI: 10.1109/JSEN.2025.3589920

引用次数: 0

Guest Editorial: Special Issue on Sensors for Sustainable Future 嘉宾评论：可持续未来的传感器特刊

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-07-31 DOI: 10.1109/JSEN.2025.3586113

Sofia Sandhu;Danilo Demarchi;Victor Grimblatt;Shiv Gobind Singh;Ravinder Dahiya

引用次数: 0

Tunneling Field Effect Transistors Based on Janus Monolayer PtSSe 基于Janus单层PtSSe的隧道场效应晶体管

IF 2.1 4区工程技术

IEEE Transactions on Nanotechnology Pub Date : 2025-07-16 DOI: 10.1109/TNANO.2025.3589902

Masoud Berahman;Hamidreza Aghasi

{"title":"Tunneling Field Effect Transistors Based on Janus Monolayer PtSSe","authors":"Masoud Berahman;Hamidreza Aghasi","doi":"10.1109/TNANO.2025.3589902","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3589902","url":null,"abstract":"This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an I<sub>on</sub>/I<sub>off</sub> ratio as high as <inline-formula><tex-math>$1.64 times 10^{8}$</tex-math></inline-formula>, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"369-377"},"PeriodicalIF":2.1,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Sensors Council IEEE传感器委员会

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-07-15 DOI: 10.1109/JSEN.2025.3585795

引用次数: 0

Blank Page 空白页

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-07-14 DOI: 10.1109/TPS.2025.3583406

引用次数: 0

Special Issue on Pulsed Power Science and Technology 脉冲功率科学与技术专刊

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-07-14 DOI: 10.1109/TPS.2025.3583455

引用次数: 0

Member ad suite 会员广告套件

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-07-14 DOI: 10.1109/TPS.2025.3584300

引用次数: 0

Special Issue on Plenary, Invited, Workshop on Pulsed Power for Fusion from PPPS-2025 来自PPPS-2025的聚变脉冲功率研讨会全体会议特刊

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2025-07-14 DOI: 10.1109/TPS.2025.3583453

引用次数: 0

Photodiode-Based TL Reader for Analyzing Persistent Luminescent Phosphor 基于光电二极管的分析持久性发光荧光粉的TL读取器

IF 4.3 2区综合性期刊

IEEE Sensors Journal Pub Date : 2025-07-10 DOI: 10.1109/JSEN.2025.3583151

N. Chingkhei Meitei;L. Lovedy Singh;A. Nabachandra Singh

{"title":"Photodiode-Based TL Reader for Analyzing Persistent Luminescent Phosphor","authors":"N. Chingkhei Meitei;L. Lovedy Singh;A. Nabachandra Singh","doi":"10.1109/JSEN.2025.3583151","DOIUrl":"https://doi.org/10.1109/JSEN.2025.3583151","url":null,"abstract":"Persistent luminescent phosphors (PLPs) are being studied due to their high intensity and prolonged emission after the removal of the excitation source. The study of this phosphor has been performed using a thermoluminescence (TL) reader based on a photomultiplier tube (PMT). However, a TL reader based on PMT suffers from two flaws, i.e., PMT saturation at high-intensity light emitted by the persistent phosphor and the decrease in glow peak height with the increase in heating rate (commonly referred to as heating rate-induced thermal quenching). A new TL reader was constructed to overcome these flaws observed in the case of persistent phosphor, and a comparative study of this reader was performed with the commercially available TL reader from Nucleonix. It was found from the comparative analysis that the photodiode is best suited for the study of persistent phosphors, and its result was in accord with the theoretically predicted pattern. Also, the theoretically predicted pattern, i.e., an increase in glow peak height with the increase in heating rate, may be used as a benchmark to test the reliability of the TL reader.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 15","pages":"29902-29909"},"PeriodicalIF":4.3,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144751118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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