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{"title":"2025 Index IEEE Transactions on Sustainable Energy","authors":"","doi":"10.1109/TSTE.2025.3611459","DOIUrl":"https://doi.org/10.1109/TSTE.2025.3611459","url":null,"abstract":"","PeriodicalId":452,"journal":{"name":"IEEE Transactions on Sustainable Energy","volume":"16 4","pages":"3128-3186"},"PeriodicalIF":10.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11184401","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145183962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Sustainable Energy Information for Authors","authors":"","doi":"10.1109/TSTE.2025.3606327","DOIUrl":"https://doi.org/10.1109/TSTE.2025.3606327","url":null,"abstract":"","PeriodicalId":452,"journal":{"name":"IEEE Transactions on Sustainable Energy","volume":"16 4","pages":"C4-C4"},"PeriodicalIF":10.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11184412","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145183960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Memristor-Based Circuit Demonstration of Hybrid Gated Recurrent Unit for Edge Computing","authors":"Xiangrong Pu;Haoming Qi;Gang Liu;Zhang Zhang","doi":"10.1109/TNANO.2025.3614198","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3614198","url":null,"abstract":"In industrial IoT and distributed computing environments, edge computing devices empowered by AI have seen increasing deployment in large-scale scenarios, thereby accelerating the demand for time-series data processing. The gated recurrent unit (GRU) outperforms conventional artificial neural networks (ANNs) in tasks such as natural language processing, speech recognition, and machine translation, due to its superior capability in modeling long-range dependencies in sequential data. However, the GRU model is limited by its large parameter count and structural complexity, which presents a bottleneck in hardware circuit implementation. To this end, a memristor-based hybrid gated recurrent unit (HGRU) is proposed, which reduces the parameter count to 67% of the original GRU and shortens the single-step computation latency by 50%, while maintaining complete circuit functionality. Finally, the proposed memristor-based HGRU circuit model is evaluated on the MNIST digit recognition and IMDB sentiment analysis tasks, achieving recognition accuracies of 97% and 86.2%, respectively. Under equivalent parameter settings, it achieves runtime reductions of 37% and 52% compared to the standard GRU, thereby significantly enhancing computational efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"481-488"},"PeriodicalIF":2.1,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analog Building Blocks: VDIBA and CDBA Based Energy-Efficient High-Speed Memristor Emulator for Neuromorphic Applications","authors":"Gouranga Mandal;Mourina Ghosh;Pulak Mondal","doi":"10.1109/OJNANO.2025.3613007","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3613007","url":null,"abstract":"In the field of neuromorphic computing, there is a growing need for high-frequency memristor emulators, especially for pattern recognition, image classification, and edge detection. A high-frequency memristor-based neural network can enhance synaptic weight updates and accelerate learning. This article presents an innovative memristor emulator circuit using CMOS-based building blocks: the Voltage Differencing Inverting Buffered Amplifier (VDIBA) and the Current Differencing Buffered Amplifier (CDBA). Our design achieves a maximum operating frequency of 60 MHz with a power consumption of only 2.25 mW. The memristor emulator is resistorless, electronically tunable, and functions in both grounded and floating configurations, as well as in incremental and decremental modes. We provide an analysis of transient behavior and voltage-current (V-I) characteristics, along with assessments of robustness and adaptability under various conditions. This memristor emulator is tailored for Adaptive Neural Networks (ANN) to mimic biological behavior and for Memristive Integrated-and-Fire (MIF) neuron circuits to replicate biological neurons, all developed using 180 nm CMOS technology. The proposed design has also been verified using ICs CA3080, LT1193, and AD844.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"112-122"},"PeriodicalIF":1.9,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11175600","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrability and New Periodic, Kink–Antikink, and Complex Multiple Soliton Solutions to the (3 + 1)-Dimensional Extended Jimbo–Miwa Equation With Time-Dependent Variable Coefficients in Plasma Physics","authors":"M. J. Rahaman;S. Saha Ray","doi":"10.1109/TPS.2025.3605238","DOIUrl":"https://doi.org/10.1109/TPS.2025.3605238","url":null,"abstract":"This article presents the exact solutions for the time-dependent variable coefficients of the (<inline-formula> <tex-math>$3+1$ </tex-math></inline-formula>)-dimensional extended Jimbo–Miwa (JM) equation. The considered equation is demonstrated to be completely integrable via the Painlevé analysis method. The Laurent series, derived using the Painlevé analysis method, has been truncated to yield an auto-Bäcklund transformation (ABT), and this method is employed to construct analytical solutions. Three new categories of analytical solutions are effectively generated for the considered equation via the ABT. Also, multi-soliton solutions are obtained using the simplified Hirota method for the equation under consideration. All the determined results are illustrated in 3-D graphs through various functions and parameter settings. These graphs reflect the physical significance of the equation being studied.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 10","pages":"3212-3227"},"PeriodicalIF":1.5,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145290233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation Study on Ellipsoidal Electrode Negative Corona Discharge in Ring Mode","authors":"Binxian Lu;Lin Xiong;Zijian Yang;Ziang Liu;Jingjing Liang","doi":"10.1109/TPS.2025.3609963","DOIUrl":"https://doi.org/10.1109/TPS.2025.3609963","url":null,"abstract":"The corona discharge phenomenon has been of great interest, and it is widely used in practical applications. By coupling the fluid dynamics equations and the Poisson equation, the negative corona discharge between <italic>a</i> plane and an ellipsoidal electrode is modeled in this article. The mechanism of ring mode discharge is, for the first time, systematically investigated through numerical simulation. The relationship between the mode of first discharge and electrode-plane setup conditions, such as various cathode shapes, applied voltages, and gap distances, is analyzed. The position where ring mode discharge occurs is correlated with the maximal electric field intensity during the discharge, which is generated by a combination of boundary charge and volume charge in the domain. It is found that in some cases, the discharge pulses can all be in ring mode. The first discharge tends to be in ring mode when the absolute value of applied voltage is lower, the semiaxis ratio <inline-formula> <tex-math>$a/b$ </tex-math></inline-formula> is larger, or the gap distance is longer. This study provides important insights for optimizing the design of electrodes and improving the efficiency of discharge in applications such as electrostatic precipitators, plasma devices, aero-engines, and other devices utilizing corona discharge.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 10","pages":"3113-3120"},"PeriodicalIF":1.5,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145289538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Ultra-Low Power 1.2 pJ/Spike Fully CMOS Spiking Neuron and Its Application","authors":"Prashant Kumar;Rajeev Kumar Ranjan;Sung-Mo Kang","doi":"10.1109/TNANO.2025.3613362","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3613362","url":null,"abstract":"Electronic neurons, such as integrate-and-fire models and memristor synapses, are key components of energy-efficient spiking neural network (SNN) systems. Current silicon-based models face challenges due to high transistor counts, large footprints, and excessive energy consumption. This brief presents a low-transistor count, energy-efficient neuron design. Our spiking signal-generating circuit consumes approximately 1.2 pJ per spike and uses a single capacitor as its only passive element, while occupying a layout area of 66.93 <inline-formula><tex-math>$mathrm{mu }$</tex-math></inline-formula>m × 36.12 <inline-formula><tex-math>$mathrm{mu }$</tex-math></inline-formula>m and operating on a 1 V power supply. We also highlight the driving capability and pattern recognition application of our proposed neuron model.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"462-468"},"PeriodicalIF":2.1,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate Stack Analysis of Junctionless Multi-Bridge-Channel FETs for Sub-3 nm Chips","authors":"Vakkalakula Bharath Sreenivasulu;N Neelima;D Sudha;Prasad M;Asisa Kumar Panigrahy;Aruru Sai Kumar","doi":"10.1109/OJNANO.2025.3611532","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3611532","url":null,"abstract":"In the proposed work, we have investigated the potential of the nanosheet FET design and temperature analysis at advanced nodes. Our investigation shows that the variation of gate length (<italic>L</i>_G) from 30 nm down to 3 nm, accompanied by using different gate dielectric materials, like silicon dioxide (only SiO₂(3 nm)) and hafnium dioxide (HfO₂) i.e., (SiO₂ (2 nm) + HfO₂ (1 nm)). The analysis is done at Linear (Ohmic) region to observe variable resistor for amplifiers or analog applications and saturation region to analyze the voltage controlled current sources (VCCS) applications. To comprehensively evaluate the electrical performance of the devices at the nano regime, quantum models are invoked to get accurate metrics like sub-threshold swing (SS), drain induced barrier lowering (DIBL), ON current (<italic>I</i>_ON), OFF current (<italic>I</i>_OFF), and <italic>I</i>_ON<italic>/I</i>_OFF ratio. Interestingly, even at the ultra-scaled dimensions of 5 nm and 3 nm, our devices exhibited remarkable electrical properties, with <italic>I</i>_OFF reaching 10¹³ at 5 nm and 10¹¹ at 3 nm, while <italic>I</i>_ON maintained a level of ∼10⁶ at both dimensions when HfO₂ gate stack is employed as the gate dielectric material. Our findings indicate that the integration of high-<italic>k</i> materials becomes imperative for achieving superior device performance, particularly at reduced <italic>L</i>_G values. Moreover, we explored the scaling flexibility of the transistors by investigating additional parameters such as transconductance (g_m) and transconductance generation factor (TGF). The impact of scaling of nanosheet FET towards temperature is also analyzed. The analysis shows that ultra scaled nanosheet FET is capable of driving amplifiers and VCCS applications with HfO₂ gate stack compared to SiO₂.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"102-111"},"PeriodicalIF":1.9,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11171618","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145210172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wideband Gain-Enhanced Filtering Vivaldi Antenna Based on Hybrid SIW-SSPP Structure and DCSM","authors":"Mingcan Cui;Quanyuan Feng;Yankai Ma;Qiang Sun;Haoxuan Sheng","doi":"10.1109/TPS.2025.3598259","DOIUrl":"https://doi.org/10.1109/TPS.2025.3598259","url":null,"abstract":"Nowadays, the filtering Vivaldi antennas are more and more popular in long-distance communication applications due to anti-interference capability and high directivity, but the existing filtering Vivaldi antennas suffer from poor filtering performance and low gain. To address poor filtering performance, a feed scheme utilizing hybrid substrate integrated waveguide (SIW) and spoof surface plasmon polariton (SSPP) structure is proposed in this article to achieve good wideband filtering performance. To address low gain, first, utilizing loaded corrugated slots technique etches a set of inclined slots on radiator arms to suppress the low-frequency gain drop caused by edge diffraction current. Second, a high effective permittivity double-sided cross stripe metamaterial (DCSM) unit is developed and according to phase calibration theory nonuniformly loaded on the front end of the antenna to achieve wideband gain enhancement. For demonstration, the proposed antenna is fabricated and measured. The measured results show that the fabricated antenna operates at 8.14–12.29 GHz [fractional bandwidth (BW) 40.1%] with an average gain of 9 dBi and a high skirt selectivity of 23.88/21.25 dB/GHz, which verifies the superiority of the proposed antenna.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 10","pages":"3121-3128"},"PeriodicalIF":1.5,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145290221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Influence of Ionization and Attachment Coefficients on Positive Corona Onset Characteristics in Dry or Moist Air","authors":"Xiaoyi Cui;Zhongyu Zeng;Tiebing Lu;Xingming Bian","doi":"10.1109/TPS.2025.3605935","DOIUrl":"https://doi.org/10.1109/TPS.2025.3605935","url":null,"abstract":"Ionization and attachment coefficients (IAC) are essential in corona discharge research. However, these parameters of air from different sources vary and are environment-affected. In the present work, the commonly used IAC data in corona discharge research are compared with the data of air calculated by the Monte Carlo (MC) simulation and the Boltzmann equation with different collision cross sections. The results are significantly influenced by both the collision cross sections and the calculation method, and additionally, the effect of humidity on the results is studied. Subsequently, the corona onset voltage of the wire–plane electrode is predicted by the photoionization criterion and measured in an artificial climate chamber. For the first time, the impact of IAC differences on the prediction of positive corona onset voltage under varying environments is analyzed. Experimental comparisons reveal that the impact is marked, especially under varying humidity conditions, where the impact trends are opposite. To ensure the comprehensiveness of the research, the photon absorption coefficient is also analyzed. Finally, according to the comparisons, recommendations for parameter acquisition methods in positive corona discharge research are provided, which will offer valuable insights for addressing corona discharge issues in various environments.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 10","pages":"3153-3161"},"PeriodicalIF":1.5,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145290226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}