Analog Building Blocks: VDIBA and CDBA Based Energy-Efficient High-Speed Memristor Emulator for Neuromorphic Applications

IF 1.9 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Gouranga Mandal;Mourina Ghosh;Pulak Mondal
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Abstract

In the field of neuromorphic computing, there is a growing need for high-frequency memristor emulators, especially for pattern recognition, image classification, and edge detection. A high-frequency memristor-based neural network can enhance synaptic weight updates and accelerate learning. This article presents an innovative memristor emulator circuit using CMOS-based building blocks: the Voltage Differencing Inverting Buffered Amplifier (VDIBA) and the Current Differencing Buffered Amplifier (CDBA). Our design achieves a maximum operating frequency of 60 MHz with a power consumption of only 2.25 mW. The memristor emulator is resistorless, electronically tunable, and functions in both grounded and floating configurations, as well as in incremental and decremental modes. We provide an analysis of transient behavior and voltage-current (V-I) characteristics, along with assessments of robustness and adaptability under various conditions. This memristor emulator is tailored for Adaptive Neural Networks (ANN) to mimic biological behavior and for Memristive Integrated-and-Fire (MIF) neuron circuits to replicate biological neurons, all developed using 180 nm CMOS technology. The proposed design has also been verified using ICs CA3080, LT1193, and AD844.
模拟模块:用于神经形态应用的基于VDIBA和CDBA的高能效高速忆阻器模拟器
在神经形态计算领域,对高频忆阻器仿真器的需求日益增长,特别是在模式识别、图像分类和边缘检测方面。高频记忆电阻器神经网络可以增强突触权值更新,加速学习。本文提出了一种创新的忆阻器仿真电路,使用基于cmos的构建模块:电压差反相缓冲放大器(VDIBA)和电流差缓冲放大器(CDBA)。我们的设计实现了60 MHz的最大工作频率,功耗仅为2.25 mW。忆阻器仿真器是无电阻的,电子可调的,并在接地和浮动配置,以及在增量和递减模式的功能。我们提供了暂态行为和电压电流(V-I)特性的分析,以及在各种条件下的鲁棒性和适应性评估。这款忆阻器模拟器是为自适应神经网络(ANN)量身定制的,可以模拟生物行为,也可以为忆阻集成与火焰(MIF)神经元电路复制生物神经元,所有这些都是使用180纳米CMOS技术开发的。所提出的设计也已通过集成电路CA3080、LT1193和AD844进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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