IEEE Open Journal of Nanotechnology最新文献

IEEE Open Journal of Nanotechnology Information for Authors IEEE纳米技术信息开放杂志作者

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2026-02-13 DOI: 10.1109/OJNANO.2026.3655540

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Can Electro-Mechanical Stress Enable Effective Majority Logic Implementations? 机电应力能使多数逻辑实现有效吗？

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2026-02-06 DOI: 10.1109/OJNANO.2026.3661648

A. Van Zegbroeck;E. Van Meirvenne;P. Anagnostou;F. Ciubotaru;C. Adelmann;S. Hamdioui;S. Cotofana

{"title":"Can Electro-Mechanical Stress Enable Effective Majority Logic Implementations?","authors":"A. Van Zegbroeck;E. Van Meirvenne;P. Anagnostou;F. Ciubotaru;C. Adelmann;S. Hamdioui;S. Cotofana","doi":"10.1109/OJNANO.2026.3661648","DOIUrl":"https://doi.org/10.1109/OJNANO.2026.3661648","url":null,"abstract":"Theoretically speaking, Majority logic, originally proposed in the <inline-formula><tex-math>$ ^{prime }70s$</tex-math></inline-formula>, enables more compact and efficient arithmetic implementations than the conventional Boolean counterpart. Nonetheless, CMOS technology based Majority logic realizations remain challenging, as standard transistor-based approaches are unable to directly exhibit majority behavior. However, recent exploration on beyond CMOS technologies created a resurgence of the interest in majority logic. In this work, we propose and analyze a novel approach towards the 3-input Majority gate (MAJ3) implementation by means of piezoelectric materials. By leveraging their intrinsic electromechanical properties, we convert the digital input signals into mechanical deformations, which are accumulated in a transfer layer. Subsequently, we transform the combined deformation back to the electric domain with a piezoelectronics element properly designed to perform majority functionality. We first present the underlying principles behind our proposal with a short introduction on majority logic, piezoelectronics, and the utilized simulation framework. Afterwards we introduce the proposed piezoelectric 3-input Majority gate (piezo-MAJ3) and strategies for optimizing its behavior and performance. We also detail the material parameters and structural design impact on device performance by utilizing both analytical discussion and physics-based simulations. Finally, we shortly highlight how our proposal can be directly integrated into CMOS circuits and compare the piezo-MAJ3 potential cost and performance with the ones of state of the art implementations. Our results indicate that when compared with its CMOS counterpart, the piezo-MAJ3 gate requires half the area, it is 7x faster, while reducing with 44% the energy consumption.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"7 ","pages":"34-40"},"PeriodicalIF":1.9,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11372983","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2025 Index IEEE Open Journal of Nanotechnology 2025年IEEE纳米技术开放期刊

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IEEE Open Journal of Nanotechnology Pub Date : 2026-01-23 DOI: 10.1109/OJNANO.2026.3656032

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Graphene for Computing: Devices to Architectures 用于计算的石墨烯：从设备到架构

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-12-22 DOI: 10.1109/OJNANO.2025.3646972

Konstantinos Rallis;Georgios Kleitsiotis;Athanasios Passias;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos Tsakalos;Antonio Rubio;Sorin Cotofana;Ioannis Karafyllidis;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis

{"title":"Graphene for Computing: Devices to Architectures","authors":"Konstantinos Rallis;Georgios Kleitsiotis;Athanasios Passias;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos Tsakalos;Antonio Rubio;Sorin Cotofana;Ioannis Karafyllidis;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2025.3646972","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3646972","url":null,"abstract":"Graphene has long been considered a revolutionary material for the field of electronics due to its remarkable set of electronic properties, standing as a very promising candidate for the post-silicon era. However, it is not just a silicon replacement, but rather an enabling material for different computing paradigms. In this work, we investigate the use of graphene in devices and circuits that are employed for the realisation of computing architectures and systems. More specifically, we focus on impactful key applications such as conventional computing and Boolean logic, high-radix computing and multi-valued logic, memristive devices and in-memory-computing, neuromorphic applications, quantum computing and photonics. Additionally, taking into consideration the state-of-the-art as well as the existing graphene-related challenges that are still present, this work attempts to assess the possible future development of graphene-based devices, circuits and systems in each of the aforementioned fields and to propose a coarse yet directive roadmap for the material’s future in computing architectures.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"7 ","pages":"1-17"},"PeriodicalIF":1.9,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11309749","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146049292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Guest Editorial: Special Issue in Memory of Prof. Brajesh Kumar Kaushik 嘉宾评论：纪念Brajesh Kumar Kaushik教授特刊

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-12-19 DOI: 10.1109/OJNANO.2025.3635934

Supriyo Bandyopadhyay;Giovanni Finocchio

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Physicochemical Dynamics and Site-Specific Crosslinking at Cellulose Nanocrystal Interfaces for Multifunctional Material Design 纤维素纳米晶体界面的物理化学动力学和位点特异性交联用于多功能材料设计

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-12-01 DOI: 10.1109/OJNANO.2025.3639059

Joseph Batta-Mpouma;Gurshagan Kandhola;Jaspreet Kaur;Jae-Woon Lim;Kalindu Perera;Hoon Seonwoo;Joshua Sakon;Jin-Woo Kim

引用次数: 0

WaCPro: An Open-Source Application for Waveform and Crossbar Programming in Nanotechnology Research WaCPro：纳米技术研究中波形和横杆编程的开源应用

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-11-07 DOI: 10.1109/OJNANO.2025.3630545

Ioannis K. Chatzipaschalis;Pantelis Fraidakis;Georgios K. Kleitsiotis;Ioannis Tompris;Athanasios Passias;Emmanouil Stavroulakis;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos-Alexandros Tsakalos;Konstantinos Rallis;Iosif-Angelos Fyrigos;Vasileios Ntinas;Antonio Rubio;Georgios Ch. Sirakoulis

{"title":"WaCPro: An Open-Source Application for Waveform and Crossbar Programming in Nanotechnology Research","authors":"Ioannis K. Chatzipaschalis;Pantelis Fraidakis;Georgios K. Kleitsiotis;Ioannis Tompris;Athanasios Passias;Emmanouil Stavroulakis;Evangelos Tsipas;Theodoros Panagiotis Chatzinikolaou;Karolos-Alexandros Tsakalos;Konstantinos Rallis;Iosif-Angelos Fyrigos;Vasileios Ntinas;Antonio Rubio;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2025.3630545","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3630545","url":null,"abstract":"Memristors and crossbar arrays are increasingly regarded as fundamental nanotechnology components for future computing and storage technologies, with promising applications in neuromorphic systems, non-volatile memories, and in-memory processing. However, their characterization and programming require precise waveform generation and reproducible signal control, which pose non-trivial challenges in experimental workflows. Developing dedicated software for waveform design in this context is particularly demanding, as it must support diverse signal types, customizable timing, and the coordination of row/column activations in crossbar architectures, while remaining intuitive for non-specialist users. This paper presents WaCPro, an open-source application that integrates waveform generation, crossbar mapping, visualization, and export functionalities into a single platform for the characterization and programming of nanoscale memristive devices and crossbar arrays. Implemented in MATLAB with a modular architecture and a graphical user interface, WaCPro enables the design and export of precisely-timed waveforms essential for the electrical stimulation of nanodevices. Export functions produce simulation- and instrumentation-ready files in widely used formats, facilitating integration into laboratory workflows, highlighting the tool’s ability to bridge theory and experiment. Validation experiments demonstrate excellent waveform replication accuracy in both amplitude and timing, confirming the reliability of the proposed tool for nanoscale testing environments.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"170-178"},"PeriodicalIF":1.9,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11231390","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145612137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Antiferromagnetic Antenna Based on Parametric Resonance Driven by Spatially Non-Uniform Voltage-Controlled Magnetic Anisotropy 空间非均匀压控磁各向异性驱动的参数共振反铁磁天线

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-10-31 DOI: 10.1109/OJNANO.2025.3628180

Andrea Meo;Giuseppe Borzì;Anna Giordano;Mario Carpentieri;Riccardo Tomasello;Giovanni Finocchio

{"title":"Antiferromagnetic Antenna Based on Parametric Resonance Driven by Spatially Non-Uniform Voltage-Controlled Magnetic Anisotropy","authors":"Andrea Meo;Giuseppe Borzì;Anna Giordano;Mario Carpentieri;Riccardo Tomasello;Giovanni Finocchio","doi":"10.1109/OJNANO.2025.3628180","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3628180","url":null,"abstract":"Antiferromagnets (AFMs), having no stray fields and terahertz frequency dynamics, are ideal candidates to be employed as material elements in antennas in 5G/6G systems, where compact, efficient antennas working in the radiofrequency are essential. Voltage controlled magnetic anisotropy (VCMA) can provide an energy-efficient electrical method for controlling AFMs thanks to reduced ohmic losses. In addition, VCMA can drive parametric excitation achieving large-amplitude precession of the AFM state achieving greater efficiency than conventional excitation methods. Here, we theoretically study the response of the AFM induced by an incident radiofrequency electromagnetic (EM) wave, modelled as a time-dependent spatially inhomogeneous VCMA drive. We find that it is possible to excite parametrically the AFM at twice the input frequency, with total suppression of the input mode when the incident EM radiation satisfies the standing wave conditions. This shows how this system can be exploited as a receiving antenna in the radiofrequency range with the capability of generating an output signal with twice the input frequency. Therefore, AFM-based antennas could overcome current limitations in traditional antenna designs, offering an in-materio and low-power tool for terahertz communication applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"146-152"},"PeriodicalIF":1.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11223752","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Inequal Three Qubit Entanglement Using GHZ State Generation for Spin-Torque Based Qubit Architecture 基于自旋扭矩的量子比特体系结构中使用GHZ状态生成的非等三量子比特纠缠

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-10-31 DOI: 10.1109/OJNANO.2025.3627500

Anant Aravind Kulkarni;Shivam Verma

{"title":"Inequal Three Qubit Entanglement Using GHZ State Generation for Spin-Torque Based Qubit Architecture","authors":"Anant Aravind Kulkarni;Shivam Verma","doi":"10.1109/OJNANO.2025.3627500","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3627500","url":null,"abstract":"This article presents the generation of Greenberger–Horne–Zeilinger (GHZ) states using a spin-torque-based qubit architecture, introducing a hardware-native decomposition of the Hadamard and controlled NOT (CNOT) gates. Unlike optical or superconducting implementations, the proposed approach exploits intrinsic spin-transfer-torque dynamics to realize single-qubit and entangling operations with minimal external control. The method reduces gate overhead and decoherence, enabling high-fidelity (> 99%) GHZ formation. An unequal entanglement amplitude naturally arises from spin-torque non-linearities and is analytically characterized as a tunable property advantageous for quantum secret sharing (QSS) and asymmetric quantum communication schemes. Numerical simulations of state evolution and density-matrix fidelity validate the robustness and efficiency of the approach. The results demonstrate that current-driven spin-torque interactions provide a compact, energy-efficient platform for scalable multi-qubit entanglement, linking spintronic device physics with quantum information processing.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"179-186"},"PeriodicalIF":1.9,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11223042","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Energy Efficient Ultra-Fast Optically Switched Fully Non-Volatile Magnetic Full Adder for Enhanced Side-Channel Attack Resilience 用于增强侧信道攻击弹性的高能效超快速光开关全非易失性磁全加法器

IF 1.9

IEEE Open Journal of Nanotechnology Pub Date : 2025-10-27 DOI: 10.1109/OJNANO.2025.3625815

Surya Narain Dikshit;Alok Kumar Shukla;Sandeep Soni;Himanshu Fulara;Brajesh Kumar Kaushik

{"title":"Energy Efficient Ultra-Fast Optically Switched Fully Non-Volatile Magnetic Full Adder for Enhanced Side-Channel Attack Resilience","authors":"Surya Narain Dikshit;Alok Kumar Shukla;Sandeep Soni;Himanshu Fulara;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2025.3625815","DOIUrl":"https://doi.org/10.1109/OJNANO.2025.3625815","url":null,"abstract":"High standby power has become a critical challenge for CMOS circuits below the 90 nm technology node as leakage currents continue to rise. Deeply scaled technologies not only increase power consumption due to subthreshold leakage but also make circuits more vulnerable to side-channel attacks (SCAs), especially leakage power analysis (LPA). Spin-based devices, like magnetic tunnel junctions (MTJs), offer key advantages such as non-volatility, high endurance, low standby power, and compatibility with CMOS technology. While switching mechanisms like spin torque transfer (STT) and spin-orbit torque (SOT) reduce energy consumption, their nanosecond-scale operation is constrained by spin precession. In contrast, all-optical switching (AOS) of MTJs enables magnetization reversal in sub-picosecond timescales, offering faster operation. This paper presents an optically switched fully non-volatile magnetic full-adder (OS-NV-MFA) circuit that uses AOS for input storage in MTJs, achieving both energy-efficiency and SCA-resilience. Results show that the OS-NV-MFA provides 56.11%, 50.78%, and 58.09% improvements in read latency and reduces total power by 76.69%, 53.28%, and 81.97% compared to NV-MFA, STT MFA, and SHE NV-MFA, respectively. Furthermore, the use of configurable and reference MTJs ensures indistinguishable subthreshold leakage currents for ‘0’ and ‘1’ states, enhancing resistance to LPA-based SCAs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"6 ","pages":"162-169"},"PeriodicalIF":1.9,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11218157","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0