IEEE Open Journal of Nanotechnology最新文献_第2页

Design and Performance Analysis of ISFET Using Various Oxide Materials for Biosensing Applications 使用各种氧化物材料的 ISFET 在生物传感应用中的设计和性能分析

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/OJNANO.2024.3408845

Sankararao Majji;Asisa Kumar Panigrahy;Depuru Shobha Rani;Muralidhar Nayak Bhukya;Chandra Sekhar Dash

{"title":"Design and Performance Analysis of ISFET Using Various Oxide Materials for Biosensing Applications","authors":"Sankararao Majji;Asisa Kumar Panigrahy;Depuru Shobha Rani;Muralidhar Nayak Bhukya;Chandra Sekhar Dash","doi":"10.1109/OJNANO.2024.3408845","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3408845","url":null,"abstract":"The healthcare industry is constantly changing because of technological breakthroughs that spur new methods of diagnosing and treating illnesses. This study investigates the development of Ion Sensitive Field Effect Transistor (ISFET) sensors for DNA-based blood cancer diagnosis. This work presents the design of a two-dimensional ion-sensitive field-effect transistor. Concentration fluctuations and transfer characteristics with different oxides are studied using blood from two electrolyte solutions. It is possible to evaluate how the modeled device can be utilized as a pH sensor or a biosensor in healthcare applications by looking at how the pH changes for different oxides. Additionally, several oxides were examined in the simulated ISFET devices' output characteristics. Blood is the electrolyte to study the device's sensitivity for different oxides. When pH 7.4 is considered, SiO\u00002\u0000 oxide is significantly more sensitive than other oxides. The resulting 2D-ISFET exhibits remarkable blood electrolyte sensitivity and holds potential as a quick detection tool for blood cancer. The results show that the ISFET possesses drain-induced barrier lowering (DIBL), greater ON-current \u0000<italic>(ION\u0000) and switching ratio (\u0000<italic>ION/IOFF\u0000), and decreased subthreshold swing (SS). The pH sensor's sensitivity and the suggested equipment can detect up to 30 fg/mL of blood cancer biomarkers. An important development in technology-driven healthcare is the emergence of DNA-based blood cancer detection utilizing ISFET sensors. This opens up new avenues for improving cancer diagnosis and patient outcomes.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"23-29"},"PeriodicalIF":1.7,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10547399","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress 栅极偏压应力下超标量 a-IGZO 薄膜晶体管的温度依赖性氢调制

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-04-08 DOI: 10.1109/OJNANO.2024.3386123

Muhammad Aslam;Shu-Wei Chang;Min-Hui Chuang;Yi-Ho Chen;Yao-Jen Lee;Yiming Li

{"title":"Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress","authors":"Muhammad Aslam;Shu-Wei Chang;Min-Hui Chuang;Yi-Ho Chen;Yao-Jen Lee;Yiming Li","doi":"10.1109/OJNANO.2024.3386123","DOIUrl":"10.1109/OJNANO.2024.3386123","url":null,"abstract":"Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive V\u0000th\u0000 shift to negative V\u0000th\u0000 shift (ΔV\u0000th\u0000, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔV\u0000th\u0000 shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔV\u0000th\u0000 shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"9-16"},"PeriodicalIF":1.7,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10494359","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140563451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications 考虑到神经形态应用中周期间变化的叠层纳米片架构 FeFET 突触的分析与设计

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-03-10 DOI: 10.1109/OJNANO.2024.3399559

Heng Li Lin;Pin Su

{"title":"Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications","authors":"Heng Li Lin;Pin Su","doi":"10.1109/OJNANO.2024.3399559","DOIUrl":"10.1109/OJNANO.2024.3399559","url":null,"abstract":"Using extensive Monte-Carlo simulations with a nucleation-limited-switching (NLS) ferroelectric model and considering cycle-to-cycle variations, this paper constructs and analyzes the intrinsic conductance (G\u0000DS\u0000) response of stacked-nanosheet FeFET synapses with emphasis on the challenging identical-pulse stimulation. Our study indicates that the interlayer oxide thickness of the FeFET and the saturation polarization of the ferroelectric are crucial to the linearity and symmetry of the intrinsic G\u0000DS\u0000 response. With the stacked-nanosheet architecture, the maximum-to-minimum conductance ratio in the G\u0000DS\u0000 response can be boosted by increasing the number of channel tiers without footprint penalty. For a stacked-nanosheet FeFET synapse with an area ratio effect, the G\u0000DS\u0000 response can be further engineered by varying the tier number. In addition, the immunity to cycle-to-cycle variations and the noise margin for each state in the G\u0000DS\u0000 response can also be improved by increasing the number of tiers. Our study may provide insights for future FeFET synapse design for analog computing.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"17-22"},"PeriodicalIF":1.7,"publicationDate":"2024-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10528861","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Open Journal of Nanotechnology Information for Authors IEEE 纳米技术开放期刊作者信息

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-03-06 DOI: 10.1109/OJNANO.2024.3362551

引用次数: 0

Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime 分析 GAA 结较少的 NS FET 在 30 纳米工艺下的模拟和射频应用

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-02-13 DOI: 10.1109/OJNANO.2024.3365173

Asisa Kumar Panigrahy;Sudheer Hanumanthakari;Shridhar B. Devamane;Shruti Bhargava Choubey;M. Prasad;D. Somasundaram;N. Kumareshan;N. Arun Vignesh;Gnanasaravanan Subramaniam;Durga Prakash M;Raghunandan Swain

{"title":"Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime","authors":"Asisa Kumar Panigrahy;Sudheer Hanumanthakari;Shridhar B. Devamane;Shruti Bhargava Choubey;M. Prasad;D. Somasundaram;N. Kumareshan;N. Arun Vignesh;Gnanasaravanan Subramaniam;Durga Prakash M;Raghunandan Swain","doi":"10.1109/OJNANO.2024.3365173","DOIUrl":"10.1109/OJNANO.2024.3365173","url":null,"abstract":"This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO\u00002\u0000 and HfO\u00002\u0000, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the \u0000<italic>ION\u0000, \u0000<italic>IOFF\u0000, \u0000<italic>ION/ IOFF\u0000, threshold voltage, DIBL, gain parameters (g\u0000m\u0000, g\u0000d\u0000, A\u0000v\u0000), gate capacitance, and cut-off frequency (\u0000<italic>fT\u0000). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10\u0000–18\u0000, according to the simulation results. A transconductance (g\u0000m\u0000) value of 21 µS and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"1-8"},"PeriodicalIF":1.7,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10433722","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors 同时考虑六个工艺变化因素的 GAA Si NS CFET 的电气特性和功率波动

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-11-28 DOI: 10.1109/OJNANO.2023.3335942

Sekhar Reddy Kola;Yiming Li

{"title":"Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors","authors":"Sekhar Reddy Kola;Yiming Li","doi":"10.1109/OJNANO.2023.3335942","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3335942","url":null,"abstract":"Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking \u0000<italic>n\u0000-FET on top of \u0000<italic>p\u0000-FET. Among the six factors, NS thickness (\u0000<italic>TNS\u0000), NS width (\u0000<italic>WNS\u0000), and gate length (\u0000<italic>LG\u0000) are identified as crucial factors contributing to large variations in device characteristics. The \u0000<italic>p\u0000-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"229-238"},"PeriodicalIF":1.7,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10330087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138739547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Specific PM2.5 Contaminant on Monolayer/Bilayer ArGNR 特定 PM2.5 污染物对单层/双层 ArGNR 的影响

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-11-24 DOI: 10.1109/OJNANO.2023.3336366

Kamal Solanki;Swati Verma;Punya Prasanna Paltani;Manoj Kumar Majumder

{"title":"Impact of Specific PM2.5 Contaminant on Monolayer/Bilayer ArGNR","authors":"Kamal Solanki;Swati Verma;Punya Prasanna Paltani;Manoj Kumar Majumder","doi":"10.1109/OJNANO.2023.3336366","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3336366","url":null,"abstract":"Elevated Particular Matter (PM\u00002.5\u0000) may increase the risk of acquiring hazardous health implications, and hence high-performance monitoring of minuscule contaminants might protect people's health. The adsorption behaviour of specific PM\u00002.5\u0000 contaminants on doped/undoped monolayer/bilayer armchair graphene nanoribbon (ArGNR) is analyzed using a hydrogen-passivated layer. By using the first-principles density functional theory (DFT), the influence of doping on the ArGNR substrate is carefully examined. Due to the fragile surface atoms, monolayer ArGNR exhibits roughly twice the adsorption energy compared to the bilayer configuration. However, the specific PM\u00002.5\u0000 contaminants, the CH\u00004\u0000, NH\u00003\u0000, and NO\u00002\u0000 molecules demonstrate chemisorption of −2 eV,−2.95 eV, and −4 eV, with extremely less bandgap variation of −65% to −70% and −100% and a gigantic amount of charge transfer of +0.153 eV, +0.156 eV and +0.010 eV, and the DOS peaks at B site are \u0000<inline-formula><tex-math>$ pm 110,text{eV}, pm 65{rm{ eV}}, pm 80{rm{ eV}}$</tex-math></inline-formula>\u0000, and at the P site are \u0000<inline-formula><tex-math>$ pm 130$</tex-math></inline-formula>\u0000 eV, \u0000<inline-formula><tex-math>$ pm 300$</tex-math></inline-formula>\u0000 eV and \u0000<inline-formula><tex-math>$ pm 80$</tex-math></inline-formula>\u0000 eV on boron-phosphorus (BP) co-doped monolayer ArGNR, for CH\u00004\u0000, NH\u00003,\u0000 and NO\u00002\u0000, respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"215-228"},"PeriodicalIF":1.7,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10328676","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138558073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observations of Aharonov-Bohm Conductance Oscillations in CVD-Grown Graphene Rings at 4K 4 K时cvd生长石墨烯环中Aharonov-Bohm电导振荡的观察

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-11-10 DOI: 10.1109/OJNANO.2023.3331974

Zitao Tang;Siwei Chen;Cynthia I. Osuala;Abdus Salam Sarkar;Grzegorz Hader;Aron Cummings;Stefan Strauf;Chunlei Qu;Eui-Hyeok Yang

{"title":"Observations of Aharonov-Bohm Conductance Oscillations in CVD-Grown Graphene Rings at 4K","authors":"Zitao Tang;Siwei Chen;Cynthia I. Osuala;Abdus Salam Sarkar;Grzegorz Hader;Aron Cummings;Stefan Strauf;Chunlei Qu;Eui-Hyeok Yang","doi":"10.1109/OJNANO.2023.3331974","DOIUrl":"10.1109/OJNANO.2023.3331974","url":null,"abstract":"We present the observations of Aharonov-Bohm (AB) oscillations in chemical vapor deposition (CVD)-grown graphene rings via magnetotransport measurements at 4K under out-of-plane external magnetic fields up to +/−2.1 T. Incorporating a baseline subtraction of the original conductance data allowed us to observe two-terminal conductance oscillations with a spacing of ΔB\u0000AB\u0000 of 3.66 to 32.9 mT from the ring with an inner radius of 200 nm and arm-width of 400 nm, and spacing of ΔB\u0000AB\u0000 from 2.1 mT to 8.2 mT from the ring with an inner radius of 400 nm and an arm-width of 400 nm. The fast-Fourier transform (FFT) data showed AB oscillation periods, with the interval of the \u0000<italic>h/e\u0000 fundamental mode given by 30/T to 273/T for the ring with the inner radius of 200 nm and arm-width of 400 nm, and 122/T to 488/T for the ring with the inner radius of 400 nm. The broad spreading of FFT peaks is due to the aspect ratio of the inner radius \u0000<italic>r1\u0000 and the width \u0000<italic>w\u0000 of the ring, \u0000<italic>r/w\u0000 ∼ 1. Systematic numerical simulations were performed to elucidate the relation between the AB oscillation frequency and the geometry of the ring. This work shows AB oscillations in CVD-grown graphene rings at an elevated temperature (4K).","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"208-214"},"PeriodicalIF":1.7,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10314768","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135604932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors 基于机器学习的栅极全能非薄片晶体管器件和电路建模综合技术

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-10-30 DOI: 10.1109/OJNANO.2023.3328425

Rajat Butola;Yiming Li;Sekhar Reddy Kola

{"title":"A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors","authors":"Rajat Butola;Yiming Li;Sekhar Reddy Kola","doi":"10.1109/OJNANO.2023.3328425","DOIUrl":"10.1109/OJNANO.2023.3328425","url":null,"abstract":"Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper a novel design scheme based on dynamically adaptive neural network (DANN) is proposed to develop fast and accurate compact model (CM). This framework constitutes a powerful yet computationally efficient methodology and exhibits emergent dynamic behaviors. This paper demonstrates that the compact model based on ML can be designed to replicate the performance of conventional compact model for nanodevices. For this work, gate-all-around (GAA) nanosheet (NS) device characteristics are comprehensively analyzed for process variability sources using the proposed model. The device geometry parameters such as channel length, nanosheet width and nanosheet thickness are fed as input features to the DANN model. The adaptive neural network learns dynamically by updating weights of the model in accordance with the input features and achieves accurate neural weight convergence. The proposed model predicted the electrical characteristics of NS devices with less than 1% error rate. The model is also implemented and validated for the simulations of digital circuit designs such as inverter, and logic gates.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"181-194"},"PeriodicalIF":1.7,"publicationDate":"2023-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10301633","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135260945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sputtering Deposition With Low Cost Multi-Element Powder Targets 低成本多元素粉末靶的溅射沉积

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-10-27 DOI: 10.1109/OJNANO.2023.3327997

Tamiko Ohshima

{"title":"Sputtering Deposition With Low Cost Multi-Element Powder Targets","authors":"Tamiko Ohshima","doi":"10.1109/OJNANO.2023.3327997","DOIUrl":"10.1109/OJNANO.2023.3327997","url":null,"abstract":"Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities (\u0000<italic>ρpowder\u0000) ranging from 0.898 to 3.00 g/cm\u00003\u0000. The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At \u0000<italic>ρpowder\u0000 = 3.00 g/cm\u00003\u0000, the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10\u0000−3\u0000 Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10\u0000−3\u0000 Ω\u0000−1\u0000 for \u0000<italic>ρpowder\u0000 = 3.00 g/cm\u00003\u0000. This research contributes to Nagasaki University's goal of “planetary health”.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"172-180"},"PeriodicalIF":1.7,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298617","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135212984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0