ACS Applied Electronic Materials最新文献

{"title":"Introducing the Inaugural Early Career Board Members in ACS Applied Electronic Materials","authors":"Xing Yi Ling,  and , Hyun Jae Kim, ","doi":"10.1021/acsaelm.5c0042910.1021/acsaelm.5c00429","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00429https://doi.org/10.1021/acsaelm.5c00429","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2153–2155 2153–2155"},"PeriodicalIF":4.3,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Straightforward Synthesis of Borophene Nanolayers for Enhanced NO2 Detection in Humid Environments","authors":"Juan Casanova-Chafer*,&nbsp; and ,&nbsp;Carla Bittencourt,&nbsp;","doi":"10.1021/acsaelm.4c0200310.1021/acsaelm.4c02003","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02003https://doi.org/10.1021/acsaelm.4c02003","url":null,"abstract":"<p >This study investigates the synthesis and gas sensing performance of borophene nanolayers produced through the sonochemical exfoliation method. The advantages of this method, including cost-effectiveness, simplicity and potential for scalability, make it a viable option for practical applications. High-resolution transmission electron microscopy (HRTEM) confirmed the successful exfoliation of boron into nanosheets with an average diameter of approximately 100 nm. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses revealed the β-rhombohedral crystal structure. Additionally, the existence of carbon and oxygen on the surface has been determined and investigated. At room temperature, the borophene nanolayers showed exceptional gas sensing capabilities for detecting nitrogen dioxide (NO₂), especially in a humid environment. The sensitivity was significantly increased by about 50% when water molecules were present. These borophene nanolayers demonstrated unprecedented sensing performance for NO₂, with detection (LOD) and quantification (LOQ) limits of 23 and 76 ppb, respectively.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2305–2312 2305–2312"},"PeriodicalIF":4.3,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth Characteristics and Electronic Properties of Epitaxial NdNiO3 Thin Films by Atomic Layer Deposition","authors":"Linn Rykkje*,&nbsp;Ola Nilsen and Henrik Hovde Sønsteby,&nbsp;","doi":"10.1021/acsaelm.4c0230610.1021/acsaelm.4c02306","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02306https://doi.org/10.1021/acsaelm.4c02306","url":null,"abstract":"<p >The transition to next-generation electronics is inevitable and will require innovative architectures and materials functionalities. The multifunctional and often strongly coupled behaviors of transition metal oxides can offer alternative pathways to more energy-efficient devices, such as transistors. Here, we study thin films of NdNiO₃ for its potential as a transistor channel switching material owing to the metal–insulator transition it exhibits at ∼200 K in bulk. The thin films exhibit high structural integrity and relevant functional properties when deposited by atomic layer deposition (ALD) under industrial processing conditions, thus providing a viable pathway for device integration. By varying the ratio of binary oxide subcycles, we can precisely obtain the stoichiometric NdNiO₃ composition for which the thin films become epitaxial as deposited at 225 °C on SrTiO₃(001). Prior to annealing, the specific resistivities at room temperature show a dependence on the out-of-plane lattice parameter, <i>c</i>, with a nonlinear increase from 10^–4 to 10^–1 Ωcm as <i>c</i> increases. After annealing at 650 °C in air, both the out-of-plane lattice parameters and resistivities converge toward a narrow range (<i>c</i> = 3.789–3.794 Å and 10^–4 Ωcm, respectively). X-ray diffraction and reciprocal space mapping reveal that annealing also has the effect of increasing the strain in the thin films; however, they remain partially relaxed from the substrate. A metal–insulator transition takes place at 140 K under cooling and 175 K upon heating back to room temperature.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2466–2475 2466–2475"},"PeriodicalIF":4.3,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02306","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wrinkled Graphene Field Effect Transistor in Heterodyne Mode for Ultrasensitive Detection of Exosomes toward Early Cancer Screening","authors":"Piyali Mukherjee,&nbsp;Shalini Dasgupta,&nbsp;Ananya Barui and Chirasree RoyChaudhuri*,&nbsp;","doi":"10.1021/acsaelm.4c0208410.1021/acsaelm.4c02084","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02084https://doi.org/10.1021/acsaelm.4c02084","url":null,"abstract":"<p >Exosomes are nanosized vesicles which have gathered significant importance as biomarkers for cancer diagnosis. Thus, there is a clear need to detect exosomes with sufficient accuracy and sensitivity. Recent reviews reveal that field effect transistors have the potential to reach lower detection limits without any labels or complex surface modification strategies. However, the major limitation is caused by screening of the charges of exosomes by the Debye layer due to their larger size in the range of 30 to 200 nm. To address this issue, here we develop a wrinkled graphene structure on a glass substrate following a scalable approach enabled by integrating the deposition of thermally reduced graphene oxide on silver nanoparticles decorated glass coupled with alternating current mode heterodyne operation for detection of exosomes extracted from lung cancer cells. Both of these phenomena result in the expansion of the electrical double layer at the graphene–electrolyte interface. Additionally, the exosomes act as dipoles at high frequency and the ac mode current modulation occurs as a function of polarizability resulting in a limit of detection (LOD) of around 1200 exosomes ml^–1 expanding a wide range of 12 × 10⁷ exosomes ml^–1 in buffer. Summarizing, this work exhibits a lowering of LOD by 2 orders of magnitude compared to state-of-the-art single-antibody-based exosome detection, thereby upgrading the potential clinical value for early cancer diagnosis.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2313–2326 2313–2326"},"PeriodicalIF":4.3,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Infrared Polarization Photodetector Based on 2D MoSe2/MoWSe4 van der Waals Heterojunction","authors":"Hui Fang,&nbsp;Lidan Lu*,&nbsp;Yuting Pan,&nbsp;Leidong Shi,&nbsp;Weiqiang Chen,&nbsp;Guang Chen,&nbsp;Wen Zhang,&nbsp;Jianzhen Ou and Lianqing Zhu*,&nbsp;","doi":"10.1021/acsaelm.4c0233110.1021/acsaelm.4c02331","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02331https://doi.org/10.1021/acsaelm.4c02331","url":null,"abstract":"<p >van der Waals heterojunctions based on atomically thin two-dimensional materials have garnered significant attention in optoelectronics due to their unique band alignment and ultrathin morphology. The anisotropy of MoWSe₄ is elucidated through Raman spectroscopy under linearly polarized excitation, exhibiting a distinct periodic variation in intensity. This study represents the first demonstration of MoWSe₄’s capability to achieve polarization effects, representing a significant advancement in two-dimensional materials. Here, photovoltaic detectors with infrared and polarization-sensitive optoelectronic functionality are developed based on MoWSe₄ and MoSe₂. MoWSe₄ and MoSe₂ form a type-II band alignment, resulting in a response in the near-infrared region. The device exhibits broad spectral and bidirectional responses, with a wavelength range spanning from 400 to 1550 nm. The MoSe₂/MoWSe₄ photodetector exhibits stable and repeatable switching behavior and can be operated with a responsivity of 15 A/W, a detectivity of 5.53 × 10¹⁰ Jones, and an external quantum efficiency of 2879%. These findings provide theoretical and experimental support for advancing infrared polarization-sensitive photodetectors based on two-dimensional materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2476–2483 2476–2483"},"PeriodicalIF":4.3,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Metal Ion Coordination Polymer Humidity Sensor with High Sensitivity, Real-Time Monitoring, and Wide Range Measurements","authors":"Chenghong Wei,&nbsp;Ziyi Guo,&nbsp;Li Li,&nbsp;Cheng Qu,&nbsp;Jincan Cui,&nbsp;Xiaolei Yuan,&nbsp;Shiqi Zhang*,&nbsp;Heng Wang* and Jia Huang*,&nbsp;","doi":"10.1021/acsaelm.5c0001510.1021/acsaelm.5c00015","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00015https://doi.org/10.1021/acsaelm.5c00015","url":null,"abstract":"<p >As the demand for environmental monitoring and industrial applications increases, the significance of humidity sensors in various fields has grown substantially. However, traditional humidity sensors are hindered by slow response times, substantial hysteresis, and inadequate stability, which limit their applicability in high-precision environments. To overcome these limitations, this study introduces an ion-capacitive humidity sensor based on poly(vinyl alcohol)-magnesium (PVA-Mg(II)). The sensor is fabricated using a straightforward solution-based method, and it leverages ion migration as the primary response mechanism, thereby significantly enhancing humidity response sensitivity compared to conventional electronic sensors. The PVA-Mg(II) sensor achieves a humidity response of up to 1420% within the 36% to 97% RH range, with a broad detection range spanning from 2% to 97% RH. The sensor exhibits response and recovery times of 15 and 2 s, respectively, with minimal hysteresis. Furthermore, the sensor demonstrates exceptional long-term stability, maintaining consistent performance for over 100 h within the 2% to 61% RH range, underscoring its superior humidity detection capabilities. By improving humidity response sensitivity through ion migration and exhibiting low hysteresis, the sensor effectively addresses the inherent limitations of traditional humidity sensors in terms of stability and response speed, offering significant potential for a wide range of practical applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2575–2582 2575–2582"},"PeriodicalIF":4.3,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrophoretically Achieved Thick and High-Quality NiO Film as Photocathode for High-Performance P1-Based p-DSSCs","authors":"Chen Bai,&nbsp;Dong Fang,&nbsp;Wei Ding,&nbsp;Jiali Wen,&nbsp;Dechao Wang,&nbsp;Baoxiu Mi* and Zhiqiang Gao*,&nbsp;","doi":"10.1021/acsaelm.5c0002410.1021/acsaelm.5c00024","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00024https://doi.org/10.1021/acsaelm.5c00024","url":null,"abstract":"<p >This work demonstrates the first preparation of a NiO photocathode by electrophoretic deposition (EPD), with which high-quality and thickness-controllable thick/porous NiO films with a bandgap of about 3.8 eV were obtained. On the other hand, during the preparation of the NiO barrier layer by conventional one-step furnace decomposition of Ni(CH₃COO)₂·4H₂O, an additional step of high-pressure dehydration was introduced, avoiding the dehydration during the furnace reaction and, hence, significantly reducing cracks in the compact NiO film. Under simulated solar irradiation of 100 mW cm^–2 and with the as-prepared NiO barrier layer plus the optimal NiO photocathode, the P1 dye based dye-sensitized solar cell (p-DSSC) exhibits a <i>J</i>_SC of 3.05 mA cm^–2, a <i>V</i>_OC of 165 mV, and a power conversion efficiency of 0.16%, which is one of the most efficient p-DSSCs based on the P1 dye. Finally, a preliminary study on a tandem DSSC (t-DSSC) comprising an N719-sensitized TiO₂ photoanode and P1-adsorbed NiO photocathode was carried out. A <i>V</i>_OC of 700 mV was achieved, which is the sum of those in the two subcells, demonstrating the potential of electrophoretic preparation of NiO in a t-DSSC.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2546–2556 2546–2556"},"PeriodicalIF":4.3,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in Protein-Based Resistive Switching Memory: Fundamentals, Challenges, and Applications","authors":"Hritinava Banik,&nbsp;Surajit Sarkar,&nbsp;Rahul Deb,&nbsp;Debajyoti Bhattacharjee and Syed Arshad Hussain*,&nbsp;","doi":"10.1021/acsaelm.4c0200810.1021/acsaelm.4c02008","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02008https://doi.org/10.1021/acsaelm.4c02008","url":null,"abstract":"<p >The advancement of protein-based resistive switching (RS) memory devices represents a promising leap in memory technology for sustainable and biocompatible electronic applications. Conventional memory devices, relying heavily on semiconductor materials, face challenges such as high-power consumption, scalability limits, and environmental impact. Protein-based RS devices offer an alternative by the exploitation of the inherent properties of proteins, such as structural diversity, biocompatibility, and biodegradability, making them viable for eco-friendly as well as suitable for flexible electronics. This review delves into the fundamentals of protein-based RS devices, detailing the switching mechanisms and classifications. It explores an in-depth account of protein-based RS devices with the diverse protein candidates including albumin, azurin, silk fibroin, ferritin, gelatin, keratin, lysozyme, protamine sulfate, soya protein, etc. to date. It also highlights each protein’s unique properties and performance metrics. The review also addresses the primary conduction mechanisms in protein-based RS devices, which are critical to understand switching behaviors and device stability. A comprehensive discussion about the challenges faced by the scientific community in order to incorporate proteins into RS-based memory devices along with strategies for improving performance, such as reducing switching voltage, enhancing retention, and enabling multilevel resistive states, is included. Finally, the review identifies key future directions for protein-based RS memory devices, focusing on scalability, performance optimization, and potential applications in neuromorphic computing, bioelectronics, and implantable devices. This comprehensive review aims to guide future research in developing protein-based RS technologies as an environmentally sustainable and high-performing solution for next-generation memory devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2208–2232 2208–2232"},"PeriodicalIF":4.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Reliability of 2D-TMDC Dry Transfer via PMMA and Target Substrate Treatments","authors":"Amir Ghiami*,&nbsp;Hleb Fiadziushkin,&nbsp;Tianyishan Sun,&nbsp;Songyao Tang,&nbsp;Yibing Wang,&nbsp;Eva Mayer,&nbsp;Jochen M. Schneider,&nbsp;Agata Piacentini,&nbsp;Max C. Lemme,&nbsp;Michael Heuken,&nbsp;Holger Kalisch and Andrei Vescan,&nbsp;","doi":"10.1021/acsaelm.4c0216810.1021/acsaelm.4c02168","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02168https://doi.org/10.1021/acsaelm.4c02168","url":null,"abstract":"<p >A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with a high reproducibility and yield is a crucial step for device integration. In this work, we introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal–organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon dioxide (Si/SiO₂) substrate is performed using PMMA (poly(methyl methacrylate)) and TRT (thermal release tape) as sacrificial layer and carrier, respectively. Our proposed method ensures a reproducible peel-off from the growth substrate and better preservation of the 2D-TMDC during PMMA removal in solvent without compromising its adhesion to the target substrate. This is achieved through a PMMA plasma treatment, which mitigates stress release during solvent exposure, and target substrate prewetting enhancing the interfacial adhesion between the 2D material and the target substrate. A comprehensive comparison between the dry method introduced in this work and a standard wet transfer based on potassium hydroxide (KOH) solution shows improvement in terms of cleanliness and structural integrity for the dry-transferred layer, as evidenced by X-ray photoemission and Raman spectroscopy, respectively. Moreover, fabricated field-effect transistors (FETs) demonstrate improvements in subthreshold slope, maximum drain current, and device-to-device variability. The dry-transfer method developed in this work enables large-area integration of 2D-TMDC layers into (opto)electronic components with high reproducibility while better preserving the as-grown properties of the layers.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2394–2403 2394–2403"},"PeriodicalIF":4.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Emission in Erbium- and Ytterbium-Doped Gallium Oxide Devices with Constrained Energy Band on Silicon Substrates","authors":"Houwei Pang,&nbsp;Lei Yang,&nbsp;Dongsheng Li* and Deren Yang*,&nbsp;","doi":"10.1021/acsaelm.4c0224910.1021/acsaelm.4c02249","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02249https://doi.org/10.1021/acsaelm.4c02249","url":null,"abstract":"<p >A kind of silicon-based erbium- and ytterbium-doped gallium oxide light-emitting device is proposed. The effects of ytterbium-doped interlayers on the electrical and emission properties are analyzed. It is found that a quantum well-like energy band that can confine electrons within the active layer has been formed. Pronounced interaction effects between erbium and ytterbium are confirmed, including energy transfer and electron transfer, which promote the excitation process for erbium emission, leading to enhanced luminescence. A maximum optical power density of ∼5.0 μW/cm² can be acquired from the device based on the film with the thickness ratio of 1:1 and three interlayers, which is almost 60 times as high as the one without ytterbium-doped interlayers. Additionally, the inversion population within erbium can be detected, which is essential to the silicon-based electrically-driven laser.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2446–2455 2446–2455"},"PeriodicalIF":4.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}