ACS Applied Electronic Materials最新文献

{"title":"Hydrothermal Synthesis of MSe2 (M = Mn, Ni) on the MoSe2@MWCNT Composite: Advancing Supercapacitor Electrode Efficiency","authors":"Farhad Chaharganeh Kalangestani*,&nbsp;Fatemeh Aghaei,&nbsp;Hossein S. Shahidani and Mohammadreza Nourmohammadian,&nbsp;","doi":"10.1021/acsaelm.5c0060910.1021/acsaelm.5c00609","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00609https://doi.org/10.1021/acsaelm.5c00609","url":null,"abstract":"<p >Binary composites of transition metal dichalcogenides and carbon nanotubes have poor electrochemical stability, and this is mostly because developed composites usually have random structures that limit ion diffusion and provide less volume for ions to expand during reversible storage. We report the synthesis of MnSe₂ and NiSe₂ on MoSe₂@MWCNT binary composite using a hydrothermal technique for application as supercapacitor electrodes in energy storage devices. The incorporation of nanostructures resulted in a ternary composite with strong synergy, which has a higher capacity compared to the MoSe₂@MWCNT binary composite. The specific capacities of 1269 and 815 F g^–1 were obtained, respectively, for the ternary nanocomposite with MnSe₂ and NiSe₂ in the potential of −0.2 to 0.8 V. With a remarkable cycle life extending up to 3000 cycles, the MnSe₂/MoSe₂@MWCNT and NiSe₂/MoSe₂@MWCNT electrodes exhibit impressive capacity retention of 99% and 97%, respectively. Notably, the MnSe₂/MoSe₂@MWCNT electrode demonstrates superior ionic interaction, facilitated by the presentation of multiple electrochemically active sites. Consequently, this results in reduced resistance and accelerated ion transmission. Nevertheless, both composites emerge as highly promising candidates for efficient energy storage applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4649–4661 4649–4661"},"PeriodicalIF":4.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrically Tunable Persistent Photoconductivity Effect in Epitaxial NiO/ZnO Heterojunctions for Artificial Synaptic Devices and Neuromorphic Computing Applications","authors":"Amandeep Kaur,&nbsp;Subhrajit Sikdar,&nbsp;Bhabani Prasad Sahu,&nbsp;Umakanta Patra and Subhabrata Dhar*,&nbsp;","doi":"10.1021/acsaelm.5c0031310.1021/acsaelm.5c00313","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00313https://doi.org/10.1021/acsaelm.5c00313","url":null,"abstract":"<p >We report electrically tunable persistent photoconductivity (PPC) behavior in <i>p</i>-(001)NiO/<i>n</i>-(0001)ZnO epitaxial heterojunctions, which can be exploited to develop efficient optoelectronic synaptic devices. It has been demonstrated that the PPC response time can be varied from a few microseconds to hundreds of seconds by applying bias in both forward and reverse directions. This bias tunable nature of PPC provides much better control over the potentiation and depression of the memory state compared with the conventional neuromorphic devices. It has been found that the typical synaptic behavior, such as paired pulse facilitation, short-to-long-term memory transitions, and learning-forgetting processes, can be mimicked very well. Both the electrical and optical energy consumptions are estimated to be as low as a few 100 nJ per synaptic event. The device demonstrates a reliable and repeatable performance over an extended period. Most interestingly, it has been shown that the device can be programmed for different logic operations such as “AND,” “OR,” and “NOT” with both the illumination and bias as inputs and the current through the device as the output. All these results highlight the prospects of these heterojunctions for the development of next-generation optoelectronic synaptic devices and neuromorphic computing.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4472–4480 4472–4480"},"PeriodicalIF":4.3,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Millimeter-Sized Epitaxial Ferroelectric BaTiO3 Freestanding Sheets Peeled from Al2O3 Substrates","authors":"Weikun Zhou,&nbsp;Diwen Chen,&nbsp;Ren Mitsuya,&nbsp;Hiromichi Ohta and Tsukasa Katayama*,&nbsp;","doi":"10.1021/acsaelm.5c0041110.1021/acsaelm.5c00411","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00411https://doi.org/10.1021/acsaelm.5c00411","url":null,"abstract":"<p >Freestanding ferroelectric perovskite-structured oxide sheets with a high degree of orientation are promising for next-generation electronic devices, including optical communication technologies. A widely used method employs a water-soluble Sr₃Al₂O₆ sacrificial layer to obtain freestanding epitaxial sheets. However, the SrTiO₃ substrate used in this process is unsuitable for large-area fabrication, necessitating alternative materials. In this study, we fabricated crack-free, epitaxial BaTiO₃ freestanding films using a cost-effective and scalable r-plane Al₂O₃ substrate and a water-soluble CaO sacrificial layer. The BaTiO₃ epitaxial sheets, which were released via pure water immersion, exhibited <i>c</i>-axis orientation, with ferroelectric polarization aligned in the out-of-plane direction. The sheet exhibits room-temperature ferroelectricity, with a remanent polarization of 21 μC/cm² and minimal leakage current. This approach reduces the fabrication costs and allows the production of larger freestanding sheets, making it promising for flexible electronics and advanced applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4552–4556 4552–4556"},"PeriodicalIF":4.3,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bias Sweep-Induced Analog Memristor Behavior, Using a Cuprous Iodide Thin Film, for Neuromorphic Computing","authors":"Rajesh Deb,&nbsp;Samapika Mallik,&nbsp;Yamineekanta Mishra,&nbsp;Roshan Padhan,&nbsp;Satyaprakash Sahoo,&nbsp;Kazuya Terabe,&nbsp;Tohru Tsuruoka* and Saumya R. Mohapatra*,&nbsp;","doi":"10.1021/acsaelm.5c0052910.1021/acsaelm.5c00529","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00529https://doi.org/10.1021/acsaelm.5c00529","url":null,"abstract":"<p >Mixed ionic-electronic conductors (MIECs) are known to show analog resistive switching (RS) behavior due to their coupled electronic and ionic transport properties. This study introduces a memristor device, made up of a well-known MIEC cuprous iodide (CuI), for artificial synaptic applications. A cross-point structured Cu/CuI/Pt device initially shows digital bipolar RS under bias voltage sweeping, which is characterized by well-separated SET and RESET voltages with a high ON/OFF resistance ratio of ∼10⁵. After 100 bias sweeping cycles, the device completely changes, showing analog RS behavior without any well-defined SET and RESET voltage, and exhibits a continuous current trajectory under bias sweeps. In comparison to the digital RS mode, the analog RS mode exhibits minimal cycle-to-cycle variability with a reduced ON/OFF ratio of ∼10. The current conduction mechanism underlying the digital switching behavior is ascribed to the formation and dissolution of a Cu filament. The analog RS behavior arises from charge trapping/detrapping at defect sites created during digital RS cycles. The device showing analog RS exhibits long-term and short-term plasticity, similar to biological synapses under voltage pulse applications. Utilizing the long-term plasticity data, artificial neural network simulations demonstrate an image recognition accuracy of ∼93% for handwritten digits. Furthermore, the device successfully replicates paired-pulse facilitation/depression and spike timing-dependent plasticity. These findings indicate the great potential of the CuI-based analog memristor to serve as artificial synapses for neuromorphic computing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4616–4627 4616–4627"},"PeriodicalIF":4.3,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00529","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Smart Self-Powered System Based on Supramolecular Conductive Hydrogel for Assistive Elderly Living","authors":"Yunlu Wang,&nbsp;Mengqi Zhang,&nbsp;Zihang Cheng,&nbsp;Qingyang Feng,&nbsp;Zida An,&nbsp;Dongsheng Liu,&nbsp;Wenxu Ni,&nbsp;Youshan Ma*,&nbsp;Zhe Sun* and Yupeng Mao*,&nbsp;","doi":"10.1021/acsaelm.5c0049710.1021/acsaelm.5c00497","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00497https://doi.org/10.1021/acsaelm.5c00497","url":null,"abstract":"<p >Accelerated aging of the population has led to an increase in the incidence of orthopedic chronic diseases and acute illness, which has placed a significant burden on the public health and economy. Continuous physiological monitoring and timely rehabilitation interventions represent crucial strategies for early disease detection, functional independence preservation, and healthcare cost containment among elderly individuals. This study proposes a single-electrode triboelectric nanogenerator (PE-TENG) for elderly assistance systems, developed through the integration of a supramolecular conductive hydrogel (PCBC-hydrogel) with a soft Ecoflex layer. The PCBC-hydrogel, engineered from poly(vinyl alcohol) (PVA), chitosan, borate cross-linking, and carbon nanotubes (CNTs), serves as an advanced friction electrode material that combines mechanical compliance with stable electrical performance, making it particularly suitable for aging-care applications. The pristine PVA hydrogel showed moderate mechanical properties. Boric acid formed dynamic borate bonds with PVA hydroxyls, enhancing the elasticity and strength. Material characterization reveals that dynamic borate ester bonding between boric acid and PVA hydroxyl groups enhances mechanical resilience, achieving a tensile strength of ∼209 kPa. The introduction of chitosan facilitates additional hydrogen bonding networks, enabling rapid self-recovery within 10 s. Incorporated CNTs provide stable electrical conductivity (0.13 S/m) while reinforcing the hydrogel matrix. The PE-TENG demonstrates reliable operation with a 90 s response time and maintains a consistent performance through 3000 cycles. This design allows for real-time monitoring of physiological signals through mechanoelectrical transduction. The utilization of supramolecular hydrogel TENG-based health monitoring systems, smart home assistance systems, and bionic effector systems enables the real-time monitoring of the physical condition of the elderly, facilitating the promotion of their healthy lifestyles through the monitoring of the home environment and bionic control. This work not only promotes the development of hydrogel-based TENGs and provides another direction for self-powered wearable devices but also establishes a foundation for future smart aging-care systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4596–4608 4596–4608"},"PeriodicalIF":4.3,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Artificial High-Throughput Aided Design of High-Performance Liquid Electrochromic Devices Based on Multilayer Perceptron Neural Networks","authors":"Muyun Li,&nbsp;Qingyue Cai,&nbsp;Huayi Lai,&nbsp;Honglong Ning*,&nbsp;Sifan Kong,&nbsp;Chenxiao Guo,&nbsp;Bocheng Jiang,&nbsp;Guoping Su,&nbsp;Rihui Yao* and Junbiao Peng,&nbsp;","doi":"10.1021/acsaelm.5c0038510.1021/acsaelm.5c00385","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00385https://doi.org/10.1021/acsaelm.5c00385","url":null,"abstract":"<p >Electrochromic devices (ECDs), serving as thermal modulation and decorative components, are extensively employed across various domains. To meet diverse application demands in different contexts, the product parameters of ECDs continually vary, notably within the electrochromic layer. In this work, a multilayer perceptron neural network is leveraged to comprehend the transition from material parameter alterations to device performance parameter changes. Specifically, 56 different testing conditions were evaluated by varying the concentration of the electrochromic molecule and the counter species; each combination was then subject to 6 different testing voltage windows, for a total of 336 different testing conditions. Subsequently, a model comprising three hidden layers and three output neurons is developed, expanding the data set simulation to 2000 groups, yielding an <i>R</i>² over 0.9 on modulation amplitude. Through this model, accurate estimations of performance parameters of numerous unmanufactured liquid-based ECDs are achieved, with projected outcomes highlighting a peak modulation amplitude of 78.38%@620 nm. It is verified that the modulation amplitude prediction error is below 5% and demonstrates stable cyclic performance over 1000 cycles (97.93% at 1.45 V), thereby underscoring the feasibility of our approach. This research serves as a pertinent instance of the synergy between multilayer perceptron neural networks and ECDs, which can effectively provide guidance for more efficiently handling the complex and diverse parameters in the field of electrochromism.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4529–4539 4529–4539"},"PeriodicalIF":4.3,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exceptional Field-like Spin–Orbit Torques in Pd/Co Heterostructures Enabled by Interfacial Spin–Orbit Coupling","authors":"Seung-Hun Jang,&nbsp;Gyuyoung Park,&nbsp;Deok Hyun Yun,&nbsp;Hyun Cheol Koo,&nbsp;Sang-Koog Kim* and OukJae Lee*,&nbsp;","doi":"10.1021/acsaelm.5c0033910.1021/acsaelm.5c00339","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00339https://doi.org/10.1021/acsaelm.5c00339","url":null,"abstract":"<p >Spin–orbit torque (SOT) has gained significant attention as a fundamental mechanism for next-generation spintronic devices. While most prior studies have focused on the damping-like torque (DLT) arising from bulk-driven spin Hall effects, the field-like torque (FLT) is often deemed to be negligible. Here, we experimentally demonstrate an exceptionally large FLT in a Pd/Co bilayer system, up to 20–40 times higher than that in Pd/CoFe or Pd/Py bilayers and even exceeding the corresponding DLT. A careful analysis of effective magnetic damping, spin-mixing conductance, and surface anisotropy indicates that strong interfacial spin–orbit coupling (ISOC) and magnetic proximity effects at the Pd/Co interface are key to enhancing both FLT and DLT, with the former showing especially remarkable enhancement. Moreover, micromagnetic simulations confirm that this large FLT enables rapid magnetization switching, offering significant advantages for high-speed, low-power magnetic memory applications. These findings highlight the critical role of interfacial engineering in achieving efficient SOT functionalities, paving the way for advanced spintronic devices leveraging robust interface-driven effects.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4501–4509 4501–4509"},"PeriodicalIF":4.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge Generation Junction for Efficient Hole Injection in InP-Based Quantum Dot Light-Emitting Diodes","authors":"Yeyun Bae,&nbsp;Jaeyeop Lee,&nbsp;Kyoungeun Lee,&nbsp;Jiyoon Oh,&nbsp;Chaegwang Lim,&nbsp;Woon Ho Jung,&nbsp;Dong Hyun Kim,&nbsp;Jaehoon Lim,&nbsp;Donggu Lee,&nbsp;Seunghyun Rhee* and Jeongkyun Roh*,&nbsp;","doi":"10.1021/acsaelm.5c0034210.1021/acsaelm.5c00342","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00342https://doi.org/10.1021/acsaelm.5c00342","url":null,"abstract":"<p >To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs) suitable for commercialization, maintaining charge neutrality within the QD emissive layer is essential to suppress nonradiative Auger recombination. However, in conventional QD-LEDs, the electron injection rate often exceeds that of the holes, leading to charge imbalance and Auger recombination. This study aims to address the aforementioned issue by introducing a charge-generation <i>p</i>–<i>n</i> junction (CGJ) to facilitate efficient hole injection in InP-based QD-LEDs. The incorporation of the CGJ enables work-function-independent charge carrier injection, significantly enhancing the hole injection rate. Single-carrier device measurements and capacitance–voltage analysis confirm that the CGJ improves the hole injection efficiency and significantly increases the hole current. Consequently, devices incorporating the CGJ exhibit a two-fold improvement in both maximum luminance (from 11,080 to 22,692 cd m^–2) and external quantum efficiency (from 5.33 to 11.01%) compared to devices without the CGJ. Furthermore, the CGJ-based QD-LEDs demonstrate an order-of-magnitude enhancement in the operational lifetime, highlighting that a robust charge balance is achieved. These findings demonstrate the effectiveness of the CGJ as a powerful tool for improving the performance and stability of InP-based QD-LEDs, thereby advancing their potential for widespread adoption in next-generation optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4493–4500 4493–4500"},"PeriodicalIF":4.3,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication and Characterizations of Porous AlGaN Distributed Bragg Reflectors with Excellent Thermal Stability at High Temperature","authors":"Yang Bao,&nbsp;Weifang Lu*,&nbsp;Mengtong Wang,&nbsp;Chunyu Liu,&nbsp;Dong-Pyo Han,&nbsp;Zhaoxia Bi*,&nbsp;Jinchai Li,&nbsp;Kai Huang,&nbsp;Junyong Kang,&nbsp;Satoshi Kamiyama and Rong Zhang,&nbsp;","doi":"10.1021/acsaelm.5c0052410.1021/acsaelm.5c00524","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00524https://doi.org/10.1021/acsaelm.5c00524","url":null,"abstract":"<p >Distributed Bragg reflectors (DBRs) made from nanoporous GaN structures are essential for light emitting diodes (LEDs) and vertical cavity surface-emitting lasers, yet they encounter stability challenges at elevated temperature during subsequent growth process. This study addressed these challenges by the usage of multiple pairs of n-AlGaN/u-AlGaN, instead of n-GaN/u-GaN, for the fabrication of lattice-matched DBRs with a technique of electrochemical etching. Our findings from scanning electron microscopy and reflectance spectra indicate that the incorporation of Al promotes the electrochemical etching process and improves the uniformity of porosity. The stop bands of the fabricated porous AlGaN DBRs were centered at around 600 nm with a reflectance of nearly 96%. Additionally, room-temperature Raman spectra were measured for porous AlGaN films annealed for different times to clarify the relationship between residual strain and thermal annealing. The effect of high-temperature annealing on the luminescence properties of the porous AlGaN DBR was investigated by photoluminescence and X-ray photoelectron spectroscopy. The results demonstrated that the incorporation of Al significantly enhanced the thermal stability of the porous DBR structures. As a contrast, we observed decomposition and recrystallization in porous GaN DBRs after high-temperature annealing at 1138 °C with nanoimprinted SiO₂ masks. Our research demonstrates that porous GaN DBRs with a few percent of Al exhibit excellent thermal stability, highlighting their potential for applications in micro-LEDs and other optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4628–4638 4628–4638"},"PeriodicalIF":4.3,"publicationDate":"2025-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Powered, Low-Poling-Field and High-Photoresponsivity Perovskite-Based Photodetectors for Neuromorphic Vision","authors":"Li Huang,&nbsp;Zefeng Chen,&nbsp;Zhiguo Nie,&nbsp;Weiwei Meng*,&nbsp;Zhen Fan*,&nbsp;Hao Yin,&nbsp;Weiguang Xie,&nbsp;Bo Wu,&nbsp;Guofu Zhou and Mingzhu Long*,&nbsp;","doi":"10.1021/acsaelm.5c0035610.1021/acsaelm.5c00356","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00356https://doi.org/10.1021/acsaelm.5c00356","url":null,"abstract":"<p >Reconfigurable photodetectors inspired by neural ion channel functions have attracted significant interest for neuromorphic vision technologies. Despite this, current devices often face challenges such as requiring high poling voltages or suffering from low photoresponsivity. In this work, we introduce a hybrid perovskite heterojunction photosensor that overcomes these limitations. The device offers a low poling field requirement, enhanced photoresponsivity, self-powered capability, and nonvolatility. Its photovoltaic behavior can be easily modified through ion migration induced by the poling field. Impressively, it achieves a high photoresponsivity of 137.4 mA W^–1 at a minimal poling field of 3 V μm^–1. This places it among the top-performing reconfigurable photodetectors. The device’s ability to switch photovoltaic properties enables advanced object imaging, while its adjustable photoresponsivity supports real-time sensing and computation. Notably, the perovskite-based artificial neural network achieves flawless pattern recognition, offering functions such as edge enhancement and resolution reduction, demonstrating great potential for energy-efficient machine vision applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4510–4519 4510–4519"},"PeriodicalIF":4.3,"publicationDate":"2025-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}