ACS Applied Electronic Materials最新文献

Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material 利用拓扑相变材料验证范德瓦尔斯界面以增强薄膜晶体管的电阻开关性能

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-13 DOI: 10.1021/acsaelm.4c01309

Rui Su, Yuheng Deng, Weichao Jiang, Yufeng Duan, Runqing Zhang, Ruizi Xiao, Chenglin Shen, Mingxing Gong, Weiming Cheng, Jingping Xu, Peter To Lai, Xiangshui Miao

引用次数: 0

Resonant Dipole–Dipole Interaction: A Protocol to Amplify Weaker PL Emission in 2D MoS2 共振偶极-偶极相互作用：在二维 MoS2 中放大较弱 PL 发射的方案

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-13 DOI: 10.1021/acsaelm.4c00972

Km Neeshu, Himanshu Tyagi, Arneet Kaur, Manpreet Kaur, Jyoti Saini, Mamta Raturi, Akash Kumar Maharana, Tapaswini Dash, Abir De Sarkar, Kiran Shankar Hazra

{"title":"Resonant Dipole–Dipole Interaction: A Protocol to Amplify Weaker PL Emission in 2D MoS2","authors":"Km Neeshu, Himanshu Tyagi, Arneet Kaur, Manpreet Kaur, Jyoti Saini, Mamta Raturi, Akash Kumar Maharana, Tapaswini Dash, Abir De Sarkar, Kiran Shankar Hazra","doi":"10.1021/acsaelm.4c00972","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00972","url":null,"abstract":"The decade old challenge of achieving excitons at room temperature in conventional bulk semiconductors, limiting their applications in photonic communication, has been overcome by the discovery of noncryogenic stable excitonic emission in 2D transition-metal dichalcogenides. The pioneering detection of stable excitonic emission under ambient conditions in the 2D family was achieved with MoS2, featuring characteristic twin-peaked photoluminescence spectra characterized by a pronounced A exciton peak, alongside a weaker B exciton peak. The accessibility and applicability of weaker exciton emissions are very limited as compared to prominent exciton emissions, which restricts the vast possibility of usage of weaker excitonic emissions spread across a broad spectral range. In this article, we have demonstrated a simple approach to selectively enhance weaker exciton emission through resonant dipole–dipole interaction. Our approach involves the utilization of a hybrid heterojunction, where the spectral overlap of excitonic emission between two materials leads to the dipole–dipole resonance effect and subsequently increases emission intensity. We have targeted the inherently low-intensity B exciton emission feature of MoS2 and coupled it with cuprous oxide (Cu2O) thin films, leveraging the strong spectral overlap between the intrinsic excitonic emission bands of Cu2O and the B exciton. Furthermore, we employed finite element analysis to investigate the impact of the extinction response on the B exciton enhancement. Our approach provides versatility in selectively augmenting weaker exciton emission by leveraging the exploitation of exciton resonance between two materials, thereby amplifying emission intensity at the targeted wavelength.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Demonstration of Improvement in Near-Infrared Photodetection Efficiency by Plasmonic Diffraction 利用等离子衍射提高近红外光电探测效率的实验演示

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-13 DOI: 10.1021/acsaelm.4c01416

Soh Uenoyama, Kazunori Tanaka, Hiroyasu Fujiwara, Akiyoshi Watanabe, Atsushi Ono

{"title":"Experimental Demonstration of Improvement in Near-Infrared Photodetection Efficiency by Plasmonic Diffraction","authors":"Soh Uenoyama, Kazunori Tanaka, Hiroyasu Fujiwara, Akiyoshi Watanabe, Atsushi Ono","doi":"10.1021/acsaelm.4c01416","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01416","url":null,"abstract":"Near-infrared (NIR) photodetectors are crucial to various applications, including face recognition, night vision, and laser detection and ranging (LiDAR). However, conventional silicon (Si)-based photodetectors exhibit poor sensitivity in the NIR region (λ = 750–1060 nm) because of low photoabsorption within the photoabsorption layer. To overcome this limitation, we proposed a plasmonic diffraction approach that can improve photosensitivity in the NIR regime by properly designing the period of the metal nanograting required to diffract the incident light at large angles in Si, thereby extending the effective propagation length in the photoabsorption layer. In addition, the metal nanograting can transmit the specific wavelength and polarization while enhancing photosensitivity through optimized geometric design. It can be highly advantageous for active sensing applications such as LiDAR, which offers the distinction between signal and noise by selectively transmitting specific wavelengths and polarizations. However, the effectiveness of plasmonic diffraction has never been experimentally demonstrated because it requires the fabrication of a metal nanograting structure with a fine gap. In this study, we successfully fabricated a gold nanograting array on a photodetector and demonstrated a significant improvement (1.79×) in its photosensitivity while employing it as a bandpass filter as well as a polarization filter, even with a single thin gold layer. In addition, providing highly reflective trenches at the border of each pixel will allow the diffracted light to be confined within the pixel, leading to the expansion of image sensors while increasing photosensitivity. This breakthrough will usher in further advances in nanophotonic devices that will enable the development of active sensing technologies with high signal-to-noise ratios.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers 对 4H-SiC 硅片上多类型物质的空间分布和复杂特性进行三维（3D）无损表征

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-12 DOI: 10.1021/acsaelm.4c01244

Mengda Wang, Yan Liu, Yan Li, Qingbo Li, Haotian Li, Mingyang Wei, Yongfu Li, Yanmin Zong, Xian Zhao

{"title":"Three-Dimensional (3D) Nondestructive Characterization of the Spatial Distribution and Complex Properties of Polytypes on 4H-SiC Wafers","authors":"Mengda Wang, Yan Liu, Yan Li, Qingbo Li, Haotian Li, Mingyang Wei, Yongfu Li, Yanmin Zong, Xian Zhao","doi":"10.1021/acsaelm.4c01244","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01244","url":null,"abstract":"4H-SiC is a leading third-generation material, and the physical vapor transport (PVT) method is the most commonly used and the most suitable for the industrial growth of bulk SiC crystals. However, because the occurrence of polytyping is still common during SiC growth by the PVT method, the identification and analysis of polytypes on 4H-SiC single crystals are very necessary. Optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and spectroscopic analyses (microscopic Raman spectroscopy, photoluminescence (PL), and cathodoluminescence (CL)) were carried out to validate and compare the newly proposed methods. Subsequently, two-photon photoluminescence (2PPL) and differential interference contrast confocal laser scanning microscopy (DIC-CLSM) were employed for the first time in this study to characterize and analyze polytype regions. Three-dimensional (3D) fluorescence characterization and 3D stress analysis of 4H, 6H, and 15R polytypes and polytype grain boundaries were successfully completed, and the spatial morphology of carbon inclusions on the polytype grain boundaries and defect clusters on the polytypes were briefly studied. The superiority of two-photon fluorescence microscopy for the characterization of the spatial distribution of 4H-SiC polytypes is confirmed by this study. This study enriches the means of identifying polytypes in 4H-SiC wafers and provides new ideas for analyzing the distribution of polytypes in 4H-SiC.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory 为铁电随机存取存储器优化具有低工作电压和高耐用性的 4 nm 厚 Hf1-xZrxO2 薄膜

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-12 DOI: 10.1021/acsaelm.4c01216

Han Sol Park, Seungheon Choi, Kyung Do Kim, Min Kyu Yeom, Suk Hyun Lee, Seung Kyu Ryoo, Cheol Seong Hwang

{"title":"Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory","authors":"Han Sol Park, Seungheon Choi, Kyung Do Kim, Min Kyu Yeom, Suk Hyun Lee, Seung Kyu Ryoo, Cheol Seong Hwang","doi":"10.1021/acsaelm.4c01216","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01216","url":null,"abstract":"The integration of ferroelectric-doped HfO2 thin films in advanced memory has been impeded by high coercive fields (EC), requiring high operation voltages. The extremely small feature size of the state-of-the-art memory device requires film thickness <5 nm, causing electrical reliability concerns and inefficient ferroelectric orthorhombic phase formation. This research addresses these challenges by optimizing 4 nm-thick (Hf,Zr)O2 (HZO) thin films to enable low-voltage operation with high reliability. It was noted that such an ultrathin film tends to stabilize the tetragonal phase compared to the more commonly researched 10 nm-thick HZO film due to the smaller grain size of the thinner film. Therefore, the capacitor fabrication conditions were reevaluated to destabilize the tetragonal phase while increasing the desired orthorhombic phase by decreasing the oxygen vacancy (VO) concentration in the film. By adjusting the ozone dose time, Zr ratio, crystallization annealing temperature, and TiN capping electrode thickness, the ferroelectric properties of the 4 nm-thick film were significantly enhanced. The decreased VO concentration also contributed to improving the capacitor reliability. The optimized 4 nm-thick HZO films exhibited outstanding ferroelectric properties, with a double coercive voltage (2 VC) of ∼0.8 V, a double remanent polarization (2Pr) of ∼25 μC/cm2 at ±1 V, and 1011 endurance, satisfying gigabit density ferroelectric random access memory requirements.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and Characterization of PZT Thick Film Microstructure and T-Shaped Generator by Electrohydrodynamic Jet Printing 利用电流体动力喷射打印技术制造 PZT 厚膜微结构和 T 型发电机并确定其特性

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-12 DOI: 10.1021/acsaelm.4c01054

Kuipeng Zhao, Peilin Li, Dongming Li, Liangkun Lu, Feng Wang, Ying Gao, Ziyi Shan

{"title":"Fabrication and Characterization of PZT Thick Film Microstructure and T-Shaped Generator by Electrohydrodynamic Jet Printing","authors":"Kuipeng Zhao, Peilin Li, Dongming Li, Liangkun Lu, Feng Wang, Ying Gao, Ziyi Shan","doi":"10.1021/acsaelm.4c01054","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01054","url":null,"abstract":"This paper presents the use of electrohydrodynamic jet (E-jet) printing technology for fabricating PZT thick film microstructures directly on substrate surfaces. The resolution of a single-layer thickness of 0.5 μm is about 40 times that of the screen printing and casting methods. The minimum microstructure gap of 10 μm is comparable to that of wet etching. Flexible control of microstructural functional characteristics and dimensions can be achieved. The 10 μm thickness “T” shape microstructure was printed on the flexible titanium alloy substrate by electrohydrodynamic jet printing technology. The beam-type generator was formed by a high-temperature cofiring process, which avoided the problems of adhesive accuracy and adhesive layer creep introduced by the adhesive process. XRD spectra confirm that the printed thick films crystallize into a standard perovskite structure at high temperatures without any impurities. The microstructure at this scale has good flexible deformation. The piezoelectric generator demonstrates a unit volume power generation of 0.26 × 10–4 mV/μm3, roughly three times that of piezoelectric ceramic generators produced by spin coating. After 3000 vibration cycles, the output voltage of the generator remains stable, confirming the reliability of the printed microstructures and the potential of electrohydrodynamic jet printing in device applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interfacing of Surface Functionalized Carbon Quantum Dots with Antiferroelectric Liquid Crystalline Molecules to Enhance Electro-Optical Characteristics 表面功能化碳量子点与反铁电液晶分子的互接以增强电光特性

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-12 DOI: 10.1021/acsaelm.4c01241

Amir Iqbal, Magdalena Urbanska, Roman S. Dabrowski, Sandeep Kumar, Ravindra Dhar

{"title":"Interfacing of Surface Functionalized Carbon Quantum Dots with Antiferroelectric Liquid Crystalline Molecules to Enhance Electro-Optical Characteristics","authors":"Amir Iqbal, Magdalena Urbanska, Roman S. Dabrowski, Sandeep Kumar, Ravindra Dhar","doi":"10.1021/acsaelm.4c01241","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01241","url":null,"abstract":"We have studied the effects of carbon quantum dots (CQDs) in a wide temperature range room-temperature antiferroelectric liquid crystal mixture. Multiple techniques, including Raman, UV–vis Fourier transform infrared spectroscopies, and high-resolution transmission electron microscopy (HRTEM), are used to characterize the synthesized CQDs. The HRTEM image indicates the quasi-spherical shape of CQDs of particle size 1.0–5.5 nm. Textural and switching characteristics of mixture W-287 and its nanocomposites (with CQDs) are investigated in the wide temperature range of the antiferroelectric chiral smectic C (SmC*a) phase and the narrow range of the ferroelectric chiral smectic C (SmC*) phase. Observed textures and other switching characteristics were used to identify the appearance of different mesophases. Compared to the pure W-287 AFLC mixture, a drastic increase in spontaneous polarization (329 to 706 nC/cm2), a substantial decrease of switching time (3 ms to 20 μs), rotational viscosity (49 to 7 mPa s), and anchoring energy coefficients for the composite systems were found for the SmC*a phase in the present investigation. The observed changes are due to the enhanced dipolar ordering as a consequence of the sp3/sp2 hybridization of CQDs, which forms an intense coupling in the liquid crystal matrix. This study signifies that the dispersed CQDs have effectively settled in the matrix of the present AFLC mixture without interfering with the hosts’ molecular ordering. These findings are useful for the potential applicability of composite systems for optical devices with a microsecond response.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Visible Light Photodetectors Based on Hydrothermally Synthesized Cd-Se-Te Nanostructures 基于水热合成 Cd-Se-Te 纳米结构的可见光光电探测器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-12 DOI: 10.1021/acsaelm.4c01000

Subhashree Das, Ayushmaan Tripathi, Abinash Parida, Devarajan Alagarasan, Ramakanta Naik

{"title":"Visible Light Photodetectors Based on Hydrothermally Synthesized Cd-Se-Te Nanostructures","authors":"Subhashree Das, Ayushmaan Tripathi, Abinash Parida, Devarajan Alagarasan, Ramakanta Naik","doi":"10.1021/acsaelm.4c01000","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01000","url":null,"abstract":"Metal chalcogenides are currently in the limelight for various optoelectronic sectors. Cd-Se-Te nanomaterials are hydrothermally synthesized by varying Se and Te while keeping the Cd content constant. A structural study provides information on the formation of hexagonal CdSe and cubic CdTe phases. The material crystallinity increased with an increase in the Te content. Raman spectroscopy showed the presence of various Cd-Te and Cd-Se modes present in the material. The morphology of the material changes from a cylindrical to a spherical shape. The optical study illustrates the reduction in the bandgap and red shift in the absorption edge. The refractive index of the material behaves exactly opposite of the optical bandgap. The X-ray photoelectron spectra provided the +2-oxidation state of Cd and the −2 oxidation state of both Se and Te. A photoluminescence (PL) study provides the defect states present in the material and shows a red shift in the PL peak, which is the same as the absorption edge. A current–voltage study of the material shows the increased pattern in the photocurrent with an increment in the Te concentration. The photoresponse study was done by the illumination of white light, which results in good responsivity and detectivity. All of these results show the material is suitable for visible light photodetector applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sulfone-Based HLCT Molecules with Efficient Orange and White Emission 具有高效橙色和白色发射功能的砜基 HLCT 分子

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-11 DOI: 10.1021/acsaelm.4c01091

Liankun Ai, Shaogang Shen, Lu Zhou, Baolin Li, Ying Wang

引用次数: 0

Flexible Sphere Elastomer Structural Pressure Sensor for Non-invasive Pulse Wave Monitoring 用于无创脉搏波监测的柔性球体弹性体结构压力传感器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-11 DOI: 10.1021/acsaelm.4c01090

Wei Zhang, Mingjun Zou, Yiming Wang, Xiaoke Wang, He Zhu, Junfeng Hu, Yanpeng Lu, Zhiming Lin

{"title":"Flexible Sphere Elastomer Structural Pressure Sensor for Non-invasive Pulse Wave Monitoring","authors":"Wei Zhang, Mingjun Zou, Yiming Wang, Xiaoke Wang, He Zhu, Junfeng Hu, Yanpeng Lu, Zhiming Lin","doi":"10.1021/acsaelm.4c01090","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01090","url":null,"abstract":"Pulse wave is considered a vital physiological signal in the effective prevention and diagnosis of cardiovascular diseases, which remain the leading cause of human mortality. Developing flexible and non-invasive pressure sensors for detecting subtle pressure changes in blood vessels has garnered significant attention globally. Here, a flexible and sphere elastomer structural triboelectric pressure sensor is developed with the characteristics of great sensitivity, decent durability, and fast response time for continuous and non-invasive monitoring of epidermal pulse waves. Leveraging the sphere elastomer structure on the tribolayer, the contact area significantly enhances the pressure sensor, resulting in an impressive sensitivity of 1.62 V kPa–1 and a swift response time for real-time pulse monitoring. Furthermore, the sphere elastomer structure endows the function of a stable supporting component in the sensor exhibiting excellent mechanical durability (>20000 cycles). Due to such merits, the pressure sensor is capable of recognizing pulse signals with detailed information in real-time. Meanwhile, the flexible pressure sensor enables capture human pulse waves at different positions and exercise conditions, making it highly versatile in practical applications. Overall, our proposed pressure sensor represents a significant advancement in non-invasive pulse monitoring for the assessment and diagnosis of cardiovascular diseases and reveals the potential applications in wearable medical electronics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0