ACS Applied Electronic Materials最新文献

{"title":"Enhancing Silicon Anodes for Lithium-Ion Batteries via Carbon-Doped MoO2 Derived from Acetylacetone Molybdenum","authors":"Yan Gao,&nbsp;Guorong Chen*,&nbsp;Yujie Zhang,&nbsp;Rubing Wu,&nbsp;Liyi Shi and Dengsong Zhang*,&nbsp;","doi":"10.1021/acsaelm.5c0065510.1021/acsaelm.5c00655","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00655https://doi.org/10.1021/acsaelm.5c00655","url":null,"abstract":"<p >Silicon-based materials are considered promising anode candidates for lithium-ion batteries; however, conventional silicon anodes always suffer from poor conductivity, severe volume expansion, and an unstable solid electrolyte interface (SEI), hindering their practical application. This study provides an original design for constructing C-doped MoO₂-coated nano Si by acetylacetone molybdenum pyrolysis. This design combines the advantages of the high ionic and electronic conductivity of C-doped MoO₂ with the robustness of inorganic oxides. More importantly, during the charging and discharging process, C-doped MoO₂ is lithiated to form a highly reversible conductive phase of Li_0.98MoO₂, promoting the formation of a stable SEI and increasing the interfacial transport of Li⁺. As a result, the 12M-Si anode demonstrates significantly stable capacity retention of 96.83% after 70 cycles at a current density of 0.25 A g^–1 and an excellent rate capability of 1551 mAh g^–1 at 1.5 A g^–1. This work provides a method for designing the surface structure of silicon-based anode materials with ionic–electronic synergistic conductivity.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5259–5270 5259–5270"},"PeriodicalIF":4.3,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144238414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Light-Responsive Molecular Dielectric Surface for Ultraviolet-Selective Organic Optoelectronic Artificial Synapses","authors":"Can Li,&nbsp;Yunjiao Gu*,&nbsp;Xiaoman Li,&nbsp;Chenlu Mao,&nbsp;Fenghua Liu,&nbsp;Shuxue Zhou,&nbsp;Chengjian Chen and Weiping Wu*,&nbsp;","doi":"10.1021/acsaelm.5c0027510.1021/acsaelm.5c00275","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00275https://doi.org/10.1021/acsaelm.5c00275","url":null,"abstract":"<p >Optoelectronic synapses, capable of perceiving and retaining external visual information, are ideally suited for the development of future biomimetic eyes and visual automation systems. Organic field-effect transistors (OFETs) have emerged as a powerful platform for artificial neuromorphic computing systems. However, intricate design and fabrication of devices are required to modulate the light-response ability and the charge transfer at the interface. In this study, we successfully fabricated a [1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) UV-sensitive synaptic transistor, exhibiting prominent visual synaptic behavior. This was achieved by functionalizing the dielectric layer with light-responsive azobenzene (AZO) derivatives through sequential reactions with silanes, significantly improving the performance of OFET-based synapses. By adjustment of the silane precursors and thus control of the number of AZO groups grafted on the interface, the light sensitivity of the as-fabricated photonic synapse is easily adjusted. The responsivity (<i>R</i>) and specific detectivity (<i>D*</i>) of these AZO-grafted OFET have reached as high as 23.9 A/W and 5.4 × 10¹⁰ cm Hz^0.5 W^–1. The superior UV sensitivity and synaptic behavior of the OFET with a densely grafted AZO interface stem from the efficient capture and retention of photogenerated electrons at defect sites, facilitated by the photoisomerization of AZO. Proof-of-concept demonstration by UV light pulses to simulate multiple brain activities, such as perception, processing, and memory of visual information, uncovers its potential in artificial intelligence and enlightens a research direction for developing neuromorphic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"4832–4842 4832–4842"},"PeriodicalIF":4.3,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144238317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coordinate Regulation of Electrical Transport and Thermal Stability of BaSm2Ti4O12-δ Ceramics by (Tb, Zr) Codoping for High-Temperature Applications","authors":"Ruifeng Wu,&nbsp;Yi Liu,&nbsp;Donglin He,&nbsp;Hao Sun,&nbsp;Yafei Liu,&nbsp;Jia Chen,&nbsp;Aimin Chang and Bo Zhang*,&nbsp;","doi":"10.1021/acsaelm.5c0065110.1021/acsaelm.5c00651","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00651https://doi.org/10.1021/acsaelm.5c00651","url":null,"abstract":"<p >Coordinated regulation of electrical transport and high-temperature stability of BaSm₂Ti₄O_12-δ is essential for achieving precise temperature measurements in high-temperature thermistors. However, at higher temperatures, the increasing oxygen vacancies in BaSm₂Ti₄O_12-δ trigger a self-compensation effect that drives the delocalization of localized electronic states. This mechanism consequently induces deviation from the Arrhenius equation in the resistivity-temperature relationship. Herein, we propose a codoping strategy to suppress the high-temperature self-compensating effect of BaSm₂Ti₄O_12-δ. The codoping strategy comprises (i) substitutional incorporation of Tb^3.5+ (average valence) at Sm³⁺ sites to modulate oxygen vacancy concentration through charge compensation mechanisms and (ii) isovalent Zr⁴⁺ doping into Ti⁴⁺ sites to suppress Ti³⁺ formation via stabilization of the Ti-site oxidation state. The results indicate that introducing Zr, in conjunction with a Tb doping amount of 0.2 (BaTb_0.2Sm_1.8Zr<i>_x</i>Ti_4–<i>x</i>O_12-δ), enhances the linear fitting coefficient of the resistance–temperature curve from 99.867% to 99.994% and reduces the aging drift rate from 86.45% to 3.1%. Additionally, the temperature coefficient of resistance (α_1000 °C) ranges from −0.89 to −1.18%/°C. (Tb, Zr) codoping improves the linearity of the resistance–temperature curve and the high-temperature stability of BaTb_0.2Sm_1.8Zr<i>_x</i>Ti_4–<i>x</i>O_12-δ ceramics. This synergistic optimization offers insights for designing effective dopants in high-temperature thermosensitive materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5241–5252 5241–5252"},"PeriodicalIF":4.3,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Development of ZrO2 Film-Based X-ray Sensor for Nondestructive Testing and Medical Imaging Applications","authors":"Jigyas Das,&nbsp; and ,&nbsp;J. M. Kalita*,&nbsp;","doi":"10.1021/acsaelm.5c0038210.1021/acsaelm.5c00382","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00382https://doi.org/10.1021/acsaelm.5c00382","url":null,"abstract":"<p >The conventional photoconductors commercially used for X-ray sensing are based on Si, a-Se, and CdTeZn. Although several semiconductors such as ZnO, Ga₂O₃, and TiO₂ are explored for X-ray sensing, none meets the commercial standard yet. In this study, the X-ray sensing properties of the ZrO₂ film-based X-ray sensor are explored. The ZrO₂ film of thickness ∼122 μm is synthesized by the sol–gel spin coating method and 1 mm × 1 mm Al is used as connecting electrodes. The ZrO₂ film has a mixture of cubic and tetragonal crystalline phases. The current–voltage (<i>I–V</i>) characteristics of the sensor recorded under dark and X-ray illumination conditions show an ohmic nature. The resistivities under the dark and X-ray illumination conditions are found to be 1.5 × 10⁸ and 2.2 × 10⁷ Ω·cm, respectively. The sensor shows a stable signal-to-noise ratio from 1.5 to 15.0 V bias voltage. The response time of the sensor is &lt;1 s. The sensor is visibly blind between 400 and 700 nm wavelengths. The dose rate characteristics of the sensor are sublinear between 0.015 and 0.248 Gy·s^–1. The X-ray sensitivities at 0.220 Gy·s^–1 for bias voltages of 1.5, 3.0, 4.5, 6.0, and 9.0 V are found to be ∼40.1 ± 0.6, 40.8 ± 1.0, 75.8 ± 0.9, 96.5 ± 1.3, and 149.8 ± 3.2 μC·Gy^1–·cm^–3, respectively. The performance of the device is very promising for developing a commercial standard X-ray sensor.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"4946–4960 4946–4960"},"PeriodicalIF":4.3,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Linkage Design of Composite Dielectric Layer for High-Performance Capacitive Pressure Sensor","authors":"Erwei Shang,&nbsp;Zilong Zhao,&nbsp;Shuai Peng,&nbsp;Nana Zhang,&nbsp;Daming Fan* and Yu Liu*,&nbsp;","doi":"10.1021/acsaelm.5c0049110.1021/acsaelm.5c00491","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00491https://doi.org/10.1021/acsaelm.5c00491","url":null,"abstract":"<p >A trade-off exists between flexible capacitive pressure sensors’ sensitivity and detection range. Existing strategies to improve the sensitivity of flexible capacitive pressure sensors by increasing microstructures and using composite materials to enhance dielectric properties are usually only effective in the low-pressure range. Limited material compressibility and dielectric properties are key factors limiting device performance. This paper proposes a composite dielectric layer based on the flexible linkage architecture (FLA), which is designed and directly manufactured using direct ink writing (DIW) 3D printing technology. Adding conductive carbon black (CB) particles increases the composite material’s relative dielectric constant. It works synergistically with the FLA dielectric layer to improve sensor’s sensing performance. With systematical optimization, the sensor exhibits high sensitivity over a wide pressure range, from 2.557 kPa^–1 within 0–2 to 0.034 kPa^–1 within 200–450 kPa. As a demonstration, sensors are utilized to monitor the movement of the robotic hand.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5050–5060 5050–5060"},"PeriodicalIF":4.3,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping Carbon Nanotube Ethylene-Vinyl Acetate Thin Films for Touch-Sensitive Applications","authors":"Bernd K. Sturdza*,&nbsp;Nicole Jacobus,&nbsp;Andre Bennett,&nbsp;Joshua Form,&nbsp;Louis Wood,&nbsp;M. Greyson Christoforo,&nbsp;Moritz K. Riede and Robin J. Nicholas*,&nbsp;","doi":"10.1021/acsaelm.4c0224610.1021/acsaelm.4c02246","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02246https://doi.org/10.1021/acsaelm.4c02246","url":null,"abstract":"<p >Transparent conductive films are key components of many optoelectronic devices but are often made from either scarce or brittle materials like indium tin oxide. Carbon nanotube-polymer films offer an abundant and flexible alternative. Here, we report how the dimensions of the carbon nanotube raw material affect their thin film performance and thickness yield when processed with the polymer ethylene-vinyl acetate. We perform chemical doping with several halogenated metals and find the electron affinity of the metal to be a good indicator of p-doping effectiveness. We identify CuCl₂ as low-cost alternative to the established gold chloride dopants. Optimising the dopant deposition method allows us to reduce the effect of doping on the optical transmittance. Percolation analysis of our films demonstrates that optimized single-walled carbon nanotube-ethylene-vinyl acetate films show no sign of percolation effects down to thicknesses of 5 nm. Finally, we produce transparent touch-sensitive devices. Comparing several of these devices, we find a linear relationship between the sheet resistance and the on/off ratio of the touch sensing that can be used to determine a threshold film thickness. Using doped carbon nanotube-ethylene-vinyl acetate films increases the on/off ratio and allows us to fabricate touch-sensitive devices with an on/off ratio of 10 at 95% optical transmittance. This clearly demonstrates the potential of these films for transparent touch-sensitive applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"4738–4746 4738–4746"},"PeriodicalIF":4.3,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping Carbon Nanotube Ethylene-Vinyl Acetate Thin Films for Touch-Sensitive Applications.","authors":"Bernd K Sturdza, Nicole Jacobus, Andre Bennett, Joshua Form, Louis Wood, M Greyson Christoforo, Moritz K Riede, Robin J Nicholas","doi":"10.1021/acsaelm.4c02246","DOIUrl":"10.1021/acsaelm.4c02246","url":null,"abstract":"<p><p>Transparent conductive films are key components of many optoelectronic devices but are often made from either scarce or brittle materials like indium tin oxide. Carbon nanotube-polymer films offer an abundant and flexible alternative. Here, we report how the dimensions of the carbon nanotube raw material affect their thin film performance and thickness yield when processed with the polymer ethylene-vinyl acetate. We perform chemical doping with several halogenated metals and find the electron affinity of the metal to be a good indicator of p-doping effectiveness. We identify CuCl₂ as low-cost alternative to the established gold chloride dopants. Optimising the dopant deposition method allows us to reduce the effect of doping on the optical transmittance. Percolation analysis of our films demonstrates that optimized single-walled carbon nanotube-ethylene-vinyl acetate films show no sign of percolation effects down to thicknesses of 5 nm. Finally, we produce transparent touch-sensitive devices. Comparing several of these devices, we find a linear relationship between the sheet resistance and the on/off ratio of the touch sensing that can be used to determine a threshold film thickness. Using doped carbon nanotube-ethylene-vinyl acetate films increases the on/off ratio and allows us to fabricate touch-sensitive devices with an on/off ratio of 10 at 95% optical transmittance. This clearly demonstrates the potential of these films for transparent touch-sensitive applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"4738-4746"},"PeriodicalIF":4.3,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12160056/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144300525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Drain-Induced Threshold-Voltage Shift Greater than 90 V/V in Molecule-Decorated MoS2 Field-Effect Transistors Operated in Air","authors":"Hiroki Kii,&nbsp; and ,&nbsp;Ryo Nouchi*,&nbsp;","doi":"10.1021/acsaelm.5c0062710.1021/acsaelm.5c00627","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00627https://doi.org/10.1021/acsaelm.5c00627","url":null,"abstract":"<p >Deposition of a molecular overlayer can effectively control the electrical properties of ultrathin layered materials. Interfacial charge transfer from the overlayers has been widely used to statically control the threshold and turn-on voltages of field-effect transistors (FETs). Herein, we report dynamic control of the threshold (turn-on) voltage of FETs deposited with a layer of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), a well-known electron-accepting molecule. The turn-on voltage of FETs based on molybdenum disulfide flakes exfoliated onto a 285 nm-thick SiO₂ gate dielectric can shift by as much as 74 V when the drain voltage increases from 0.2 to 1 V, which is 3 orders of magnitude higher than the well-known drain-induced barrier lowering. This dynamic shift is accompanied by a rectification behavior in the current–voltage characteristics and requires water molecules to be present in the environment. These facts indicate that water-induced Schottky-barrier modulation is the cause of this shift. The shift is quite weak in the case of TCNQ deposition, suggesting the role of dipoles at the fluorine substituents. Our findings suggest a new mechanism for the instability in FETs composed of layered two-dimensional semiconductors operated in air, which in turn can be exploited to impart dynamic tunability to FETs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5282–5289 5282–5289"},"PeriodicalIF":4.3,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High On/Off Current Ratio and Ultrashort Channel p-Type Vertical FET Realized by Plasma Oxidation of WSe2","authors":"Hyungyu Choi,&nbsp;Inhee Jeong,&nbsp;Hyokwang Park,&nbsp;Nasir Ali,&nbsp;Andrew Ben-Smith,&nbsp;Jae Woo Kim,&nbsp;Ki Kang Kim,&nbsp;Min Sup Choi*,&nbsp;Boseok Kang* and Won Jong Yoo*,&nbsp;","doi":"10.1021/acsaelm.5c0058410.1021/acsaelm.5c00584","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00584https://doi.org/10.1021/acsaelm.5c00584","url":null,"abstract":"<p >Vertical field effect transistors (VFETs) based on two-dimensional materials offer exceptional potential for next-generation electronic devices due to their atomically thin channels and scalability. However, achieving high-performance <i>p</i>-type VFETs (<i>p</i>-VFETs) presents substantial challenges, as these devices often face limitations in hole transport efficiency, leakage current suppression, and attainment of high on/off current ratios. This study introduces an ultrashort channel length (less than 3.5 nm) <i>p</i>-type tungsten diselenide (WSe₂) VFET incorporating a tungsten oxide (WO_<i>x</i>) interfacial layer and niobium diselenide (NbSe₂) contacts. The WO_<i>x</i> layer enhances the <i>p</i>-doping concentration shrinking depletion region and serves as a tunneling barrier enhancing gate controllability, while NbSe₂ forms defect-free van der Waals contacts, minimizing charge trapping and interface scattering. These combined effects result in an on/off current ratio of approximately 10³ and 10⁵ in WSe₂ <i>p</i>-VFET with a 2.1 and 3.5 nm channel length, respectively, demonstrating superior performance compared to previously reported studies. This study establishes a robust platform for the development of high-performance <i>p</i>-type VFETs, paving the way for scalable and energy-efficient electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5175–5183 5175–5183"},"PeriodicalIF":4.3,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144238655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of Planar Geometry PIN Photodetectors with GeSi/Ge Multiple Quantum Wells Hybrid Intrinsic Region on a Ge-on-Insulator Platform","authors":"Junhao Du,&nbsp;Xuewei Zhao*,&nbsp;Yuanhao Miao*,&nbsp;Jiale Su,&nbsp;Ben Li,&nbsp;Xiangliang Duan,&nbsp;Tianyu Dong,&nbsp;Jiahan Yu,&nbsp;Hongxiao Lin,&nbsp;Yuhui Ren,&nbsp;Bo Wang,&nbsp;Tianchun Ye and Henry H. Radamson*,&nbsp;","doi":"10.1021/acsaelm.5c0061610.1021/acsaelm.5c00616","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00616https://doi.org/10.1021/acsaelm.5c00616","url":null,"abstract":"<p >In this article, the first demonstration of planar geometry Ge PIN short-wave infrared (SWIR) photodetectors (PDs) on a germanium-on-insulator (GOI) platform has been presented. The intrinsic layer Ge contains four Ge_0.86Si_0.14 multiple quantum wells (MQWs). The structural characteristics, material quality, and interface integrity of the PDs were investigated by using high-resolution transmission electron microscopy (HR-TEM) and high-resolution X-ray diffraction (HR-XRD). The devices exhibited a 3.12 mA/cm² dark current density and a low bulk leakage current density of 0.94 mA/cm² at −1 V. The integration of tensile-strained GeSi/Ge MQWs significantly enhanced the responsivity while maintaining a relatively lower dark current density, thereby broadening the spectral response range to 1700 nm. The notably high responsivities at 1310 and 1550 nm are 0.99 and 0.78 A/W, respectively, corresponding to external quantum efficiencies (EQEs) of 93.7 and 62.4%. Furthermore, the optical confinement effect inherent to this type of GOI structure contributed to a pronounced enhancement in the responsivity across the O, E, S, and C bands, with a peak responsivity of 1.11 A/W at 1475 nm. These findings underscore the potential of CMOS-compatible GOI platforms with MQWs hybrid intrinsic regions for diversified optoelectronic applications. Additionally, the demonstrated planar geometry Ge PIN PDs on insulator substrates exhibit excellent prospects for high-resolution SWIR imaging, which pave the way for advancements in next-generation photonic and sensing technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 11","pages":"5205–5216 5205–5216"},"PeriodicalIF":4.3,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144239169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}