ACS Applied Electronic Materials最新文献

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Blow Smoke and Air: A Peculiar Story of Resuscitation in Near Drowning. 吹烟和空气:濒临溺水时抢救的奇特故事。
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-10-01 Epub Date: 2022-10-12 DOI: 10.1007/s12028-022-01616-x
Eelco F M Wijdicks
{"title":"Blow Smoke and Air: A Peculiar Story of Resuscitation in Near Drowning.","authors":"Eelco F M Wijdicks","doi":"10.1007/s12028-022-01616-x","DOIUrl":"10.1007/s12028-022-01616-x","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"691-694"},"PeriodicalIF":4.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"33501782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress-Assisted Networking Enabled Highly Conductive Liquid Metal-Based PVP-Fructose Gel with Multi-intelligent Properties for Stretchable Electronics 应力辅助网络支持高导电性液态金属基pvp -果糖凝胶,具有可拉伸电子器件的多智能特性
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-15 DOI: 10.1021/acsaelm.5c01553
Menglong Ding, , , Qingzhen Zhao, , , Jianke Du*, , , Minghua Zhang, , , Aibing Zhang, , , Yuan Jin, , , Licheng Hua, , , Changshun Huang*, , and , Guangyong Li*, 
{"title":"Stress-Assisted Networking Enabled Highly Conductive Liquid Metal-Based PVP-Fructose Gel with Multi-intelligent Properties for Stretchable Electronics","authors":"Menglong Ding,&nbsp;, ,&nbsp;Qingzhen Zhao,&nbsp;, ,&nbsp;Jianke Du*,&nbsp;, ,&nbsp;Minghua Zhang,&nbsp;, ,&nbsp;Aibing Zhang,&nbsp;, ,&nbsp;Yuan Jin,&nbsp;, ,&nbsp;Licheng Hua,&nbsp;, ,&nbsp;Changshun Huang*,&nbsp;, and ,&nbsp;Guangyong Li*,&nbsp;","doi":"10.1021/acsaelm.5c01553","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01553","url":null,"abstract":"<p >Conductive hydrogel materials are garnering attention for their high flexibility and biocompatibility, establishing them as promising candidates for use in wearable and stretchable electronics. Despite the high conductivity of many reported hydrogel materials, they generally lack intelligent properties such as degradability, stretchability, self-adhesion, and self-healing. This study proposes a stress-assisted conductive networking mechanism for liquid metal (LM)-based gel, which is attributed to the internal stress generated by volume shrinkage during the liquid–solid phase transition, and operates without the requirement of additional energy input. Based on this mechanism, LM particles are subsequently incorporated into a polyvinylpyrrolidone (PVP)-fructose composite (PFC) to fabricate a highly conductive LM-PFC gel. This gel not only achieves high conductivity but also demonstrates excellent intelligent properties, including high stretchability, degradability, high mechanical strength, self-adhesion, self-conforming ability, recyclability, and self-healing ability, which make it highly suitable for applications such as monitoring bioelectric signals, thereby highlighting its immense potential in stretchable electronics and wearable technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8646–8654"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Achieving Face-Selective Ohmic Contact to β-Ga2O3 via Anisotropic Trench Structure 通过各向异性沟槽结构实现β-Ga2O3的表面选择性欧姆接触
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-15 DOI: 10.1021/acsaelm.5c01474
Woong Choi, , , Seungyun Lee, , , Sanghyun Moon, , , Kwang Hyeon Baik*, , and , Jihyun Kim*, 
{"title":"Achieving Face-Selective Ohmic Contact to β-Ga2O3 via Anisotropic Trench Structure","authors":"Woong Choi,&nbsp;, ,&nbsp;Seungyun Lee,&nbsp;, ,&nbsp;Sanghyun Moon,&nbsp;, ,&nbsp;Kwang Hyeon Baik*,&nbsp;, and ,&nbsp;Jihyun Kim*,&nbsp;","doi":"10.1021/acsaelm.5c01474","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01474","url":null,"abstract":"<p >Achieving low contact resistance is crucial for fabricating high-performance electronic and optoelectronic devices. As beta-gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) with a low-symmetry monoclinic structure exhibits anisotropic electronic properties, we investigated the anisotropic contact resistance of β-Ga<sub>2</sub>O<sub>3</sub> by fabricating trench contact structures on six distinct crystallographic planes ((001), (100), (101), (102), (201), and (−201)) using photo-enhanced metal-assisted chemical etching on undoped (010)-oriented substrates. Trench contact structures enable contacts on distinct crystallographic planes, overcoming the restriction of contact formation to the grown surface. Transfer length method analysis revealed that trench contacts on the (−201) plane yielded the lowest contact resistance (0.23 kΩ·mm). The low atomic density and surface energy enhanced carrier injection at the interface owing to the lower phonon density and formation of a thinner Ti–TiO<sub><i>x</i></sub> interfacial layer, respectively. Asymmetric self-powered ultraviolet–C photodetectors incorporating (−201) trench contacts exhibited superior optoelectronic performance, including a 3-fold increase in responsivity (13.17 mA·W<sup>–1</sup>) with enhanced photo-to-dark current ratio (1.38 × 10<sup>4</sup>%), compared with that of surface-contacted devices (4.38 mA·W<sup>–1</sup>, 7.57 × 10<sup>3</sup>%). This work highlights the importance of anisotropic properties in contact engineering and provides a pathway for optimizing β-Ga<sub>2</sub>O<sub>3</sub> devices for next-generation power and photodetection technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8618–8624"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01474","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing the Reliability of Bi2Te3-Based Thermoelectric Generators with Asymmetric Structures under Large Temperature Difference 大温差下非对称结构bi2te3基热电发电机可靠性优化
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-15 DOI: 10.1021/acsaelm.5c01475
Weiqiang Cao, , , Jianan Lyu*, , , Ziao Wang, , , Bachir Melzi, , , Yonggao Yan, , , Dongwang Yang*, , and , Xinfeng Tang*, 
{"title":"Optimizing the Reliability of Bi2Te3-Based Thermoelectric Generators with Asymmetric Structures under Large Temperature Difference","authors":"Weiqiang Cao,&nbsp;, ,&nbsp;Jianan Lyu*,&nbsp;, ,&nbsp;Ziao Wang,&nbsp;, ,&nbsp;Bachir Melzi,&nbsp;, ,&nbsp;Yonggao Yan,&nbsp;, ,&nbsp;Dongwang Yang*,&nbsp;, and ,&nbsp;Xinfeng Tang*,&nbsp;","doi":"10.1021/acsaelm.5c01475","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01475","url":null,"abstract":"<p >The thermoelectric (TE) recovery technology for industrial waste heat is crucial for improving energy utilization efficiency. Currently, commercial Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric generators (TEGs) show significant reliability issues when operating under large temperature differences (<i>T</i><sub>h</sub> &gt; 200 °C, Δ<i>T</i> &gt; 150 °C). This is primarily due to the accumulation of interfacial thermal stress resulting from traditional rigid structural designs and material degradation at high temperatures. In this work, we improve two TEG structures: B-TEG (symmetrically modified with thermal conductive adhesive) and C-TEG (asymmetric design using arc-sprayed Zn/Al electrodes). Finite element simulations indicate that under thermal shock (from 100 °C to 250 °C), B-TEG can reduce interfacial stress by 78% compared to traditional rigidly bonded TEGs (A-TEG). Excellent stability was confirmed through 2000 thermal cycles and 1000 h of aging tests. The AC resistance (ACR) change rate of C-TEG is only 0.90%, outperforming B-TEG (1.28%) and A-TEG (which experienced 100% failure). Microstructural analysis (SEM/TEM) confirms that the arc-sprayed Ni layer forms an active NiBi<sub>3</sub> phase at the interface, effectively suppressing crack propagation and interelement diffusion. The asymmetric design of C-TEG, combined with scalable arc spraying manufacturing, provides a robust solution for enhancing TEG reliability in extreme thermal environments.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8609–8617"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smart and Low-Cost Flexible Strain Sensor Based on Graphene-MWCNT Porous Elastic Sponge for Home Control and Object Grasping Recognition Using Machine Learning 基于石墨烯- mwcnt多孔弹性海绵的智能低成本柔性应变传感器用于家庭控制和机器学习的物体抓取识别
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-14 DOI: 10.1021/acsaelm.5c01275
Xiao-Hai Chen, , , Zhenhua Tang*, , , Feng-Ming Li, , , Hui-Qing Li, , , Shui-Feng Li, , , Yan-Ping Jiang, , , Xin-Gui Tang, , and , Ju Gao, 
{"title":"Smart and Low-Cost Flexible Strain Sensor Based on Graphene-MWCNT Porous Elastic Sponge for Home Control and Object Grasping Recognition Using Machine Learning","authors":"Xiao-Hai Chen,&nbsp;, ,&nbsp;Zhenhua Tang*,&nbsp;, ,&nbsp;Feng-Ming Li,&nbsp;, ,&nbsp;Hui-Qing Li,&nbsp;, ,&nbsp;Shui-Feng Li,&nbsp;, ,&nbsp;Yan-Ping Jiang,&nbsp;, ,&nbsp;Xin-Gui Tang,&nbsp;, and ,&nbsp;Ju Gao,&nbsp;","doi":"10.1021/acsaelm.5c01275","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01275","url":null,"abstract":"<p >Flexible sensors are attracting significant interest due to their pivotal role in applications such as human activity monitoring and human–computer interaction. The low-cost polyurethane (PU) sponge with high elasticity and repeatability possesses significant potential for applications in flexible electronics and smart devices. Hence, we developed a piezoresistive pressure sensor based on a (graphene-MWCNT)/PU sponge composite, fabricated via a straightforward polymerization and dipping-drying process. This method leverages the stable porous structure of the PU sponge to ensure the robust adhesion of graphene and MWCNTs onto its skeleton, leading to the formation of an effective conductive network. The resulting low-cost sensor demonstrates excellent sensitivity (0.1 kPa<sup>–1</sup>) and remarkable stability, maintaining its performance for 1000 cycles. Moreover, the smart sensor can be snugly affixed to the human body for the detection of human motion signals, enabling applications such as monitoring diverse human motions, recognizing different objects, and controlling external devices such as an LED light and a fan. Interestingly, by integrating the sensors into an array with a signal acquisition circuit, we developed a system capable of providing tactile feedback by mapping the real-time spatial pressure distribution during complex tasks. When combined with a deep learning algorithm, this system successfully classified five different grasped objects with an accuracy of 97.6%. These results highlight the significant potential of this sponge-based pressure sensor for applications in advanced household appliances and AI-integrated real-time control systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8516–8527"},"PeriodicalIF":4.7,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystal Orientation Effects on the Nanotribological, Mechanical and Electrical Properties of Atomically Flat SrTiO3 Surfaces 晶体取向对原子平面SrTiO3表面纳米摩擦学、力学和电学性能的影响
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-14 DOI: 10.1021/acsaelm.5c01244
Jong Hun Kim, , , Hyun Soo Ahn, , , Hong Yeon Yoon, , , Hunyoung Cho, , , Jeong Young Park*, , and , Jong Hoon Jung*, 
{"title":"Crystal Orientation Effects on the Nanotribological, Mechanical and Electrical Properties of Atomically Flat SrTiO3 Surfaces","authors":"Jong Hun Kim,&nbsp;, ,&nbsp;Hyun Soo Ahn,&nbsp;, ,&nbsp;Hong Yeon Yoon,&nbsp;, ,&nbsp;Hunyoung Cho,&nbsp;, ,&nbsp;Jeong Young Park*,&nbsp;, and ,&nbsp;Jong Hoon Jung*,&nbsp;","doi":"10.1021/acsaelm.5c01244","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01244","url":null,"abstract":"<p >Research on perovskite oxides offers opportunities to explore diverse scientific phenomena at the nano- and atomic scales, along with their promising technological potential. In particular, strontium titanate (SrTiO<sub>3</sub>) has attracted substantial research attention not only as a model system, but also for its ability to provide good interfacial compatibility with other hetero-oxide materials. However, the role of crystal orientation remains relatively unexplored. In this study, three SrTiO<sub>3</sub> single-crystalline substrates with different crystal orientations ((001), (110), and (111)) were investigated. Scanning probe microscopy (SPM) revealed that all three surfaces are atomically flat with well-defined terraces, and the measured step heights match the theoretical lattice spacing for each direction. Simultaneously acquired friction measurements unveiled marked variations in friction depending on the crystal orientation. Additional SPM studies on local mechanical properties revealed that the (110) and (111) samples exhibit reduced modulus and increased adhesion, ultimately enhancing energy dissipation and friction. Even after normalizing by modulus-dependent contact area, the pressure–shear relations in (110) and (111) were found to be strongly modulated by surface orientation-dependent structure and chemistry compared with the (001). Furthermore, surface potential mapping showed that the TiO<sub>2</sub>-induced work function in (001) is significantly reduced by the presence of SrO in (110) and oxygen-deficient Ti sites in (111). These results provide new insights into the interplay between orientation-dependent intrinsic surface features of SrTiO<sub>3</sub> and offer valuable guidelines for characterizing other metal oxides.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8466–8475"},"PeriodicalIF":4.7,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric Performance of a Three-Dimensional Self-Healing Anthracene Copolymer Network and Its Application in a Capacitive Tactile Sensor 三维自愈蒽共聚物网络的介电性能及其在电容式触觉传感器中的应用
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-14 DOI: 10.1021/acsaelm.5c01507
Trong Danh Nguyen, , , My Thi Ngoc Nguyen, , and , Jun Seop Lee*, 
{"title":"Dielectric Performance of a Three-Dimensional Self-Healing Anthracene Copolymer Network and Its Application in a Capacitive Tactile Sensor","authors":"Trong Danh Nguyen,&nbsp;, ,&nbsp;My Thi Ngoc Nguyen,&nbsp;, and ,&nbsp;Jun Seop Lee*,&nbsp;","doi":"10.1021/acsaelm.5c01507","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01507","url":null,"abstract":"<p >Capacitive tactile sensors are essential to robotics and human–machine interfaces, for which advanced sensing technologies are in high demand. Although polymeric materials offer high flexibility, their inherently low dielectric permittivities limit their performance. To address this, dynamic covalent bonds have been incorporated into polymer networks to endow them with self-healing properties. While hydrogen bond-based self-healing materials are sensitive to ambient moisture, thermally responsive dynamic covalent bonds require direct contact for efficient heat transfer. Such contact causes practical inconvenience and risks unintended deformation in the surrounding areas. In this study, a three-dimensional copolymer network was constructed by cross-linking poly(vinyl alcohol) and poly(ethylene glycol) via reversible anthracene covalent bonds. The resulting polymer network exhibited an optimal dielectric permittivity and desirable mechanical properties. Moreover, anthracene dynamic bonding enables noncontact, light-triggered self-healing in targeted regions using UV irradiation. The tactile sensor, which utilized the proposed polymer material as a dielectric layer, demonstrated good sensitivity of 0.161 kPa<sup>–1</sup> over a wide range from 0.1 to 12.5 kPa<sup>–1</sup> and produced stable signals for up to 10,000 cycles. The device was capable of detecting pressures from human body motion, even after recovering from mechanical damage, owing to its self-healing capability.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8625–8635"},"PeriodicalIF":4.7,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reservoir Computing Using Series-Parallel-Connected Au Nanogaps and Electromigrated Coulomb Islands 利用串并联金纳米隙和电迁移库仑岛计算储层
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-12 DOI: 10.1021/acsaelm.5c01068
Keita Sakai, , , Yudai Tanaka, , , Mamiko Yagi, , , Mitsuki Ito, , and , Jun-ichi Shirakashi*, 
{"title":"Reservoir Computing Using Series-Parallel-Connected Au Nanogaps and Electromigrated Coulomb Islands","authors":"Keita Sakai,&nbsp;, ,&nbsp;Yudai Tanaka,&nbsp;, ,&nbsp;Mamiko Yagi,&nbsp;, ,&nbsp;Mitsuki Ito,&nbsp;, and ,&nbsp;Jun-ichi Shirakashi*,&nbsp;","doi":"10.1021/acsaelm.5c01068","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01068","url":null,"abstract":"<p >Reservoir computing necessitates the development of devices exhibiting complex dynamic characteristics to enable efficient hardware implementation. This study introduces a physical reservoir computing (PRC) scheme based on series-parallel-connected Au nanogaps activated through a specialized technique. The method utilizes electromigration, driven by field emission currents across the nanogaps, to modulate the tunnel resistance. The memory capacities of physical reservoirs configured as 2 × 1 and 3 × 2 series-parallel-connected nanogaps were experimentally evaluated by using short-term memory (STM) and parity check (PC) tasks. Unlike single-nanogap systems, these series-parallel configurations do not exhibit a reservoir property region characterized by high STM capacity and low PC capacity. Instead, they demonstrate enhanced memory performance in both STM and PC tasks. Compared with systems based on single Au nanogaps, these configurations significantly improve STM and PC capabilities without increasing the number of virtual nodes, thereby preserving the processing speed inherent to single-nanogap systems. Furthermore, scanning electron microscopy revealed structural modifications within the nanogaps after reservoir operation, including the formation of single-electron transistor islands, which may enhance computational capabilities through single-electron tunneling effects. Evidence of Coulomb blockade behavior, observed as a distinct suppression of conductance near zero bias voltage in the drain current–drain voltage characteristics, further supports this enhancement. These results establish series-parallel-connected Au nanogaps as efficient physical reservoirs and present a promising approach for advancing PRC systems based on Au nanogaps subjected to this activation technique.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8400–8408"},"PeriodicalIF":4.7,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Channel Thickness and Counterion Composition on the Performance and Stability of Interdigitated Organic Electrochemical Transistors (OECTs) Using Electrochemically Deposited PEDOT 沟道厚度和反离子组成对电化学沉积PEDOT交叉指状有机电化学晶体管性能和稳定性的影响
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-11 DOI: 10.1021/acsaelm.5c01214
Junghyun Lee, , , Yuhang Wu, , , Quintin Baugh, , , Nurdan Cocuk, , , Laure V. Kayser, , and , David C. Martin*, 
{"title":"Influence of Channel Thickness and Counterion Composition on the Performance and Stability of Interdigitated Organic Electrochemical Transistors (OECTs) Using Electrochemically Deposited PEDOT","authors":"Junghyun Lee,&nbsp;, ,&nbsp;Yuhang Wu,&nbsp;, ,&nbsp;Quintin Baugh,&nbsp;, ,&nbsp;Nurdan Cocuk,&nbsp;, ,&nbsp;Laure V. Kayser,&nbsp;, and ,&nbsp;David C. Martin*,&nbsp;","doi":"10.1021/acsaelm.5c01214","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01214","url":null,"abstract":"<p >Organic electrochemical transistors (OECTs) prepared from poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS) have been widely investigated, typically with films prepared by spin-casting and drying from aqueous commercially available suspensions. Electrochemical deposition of PEDOT makes it possible to more precisely control film thickness and counterion composition. Here, we examined the influence of channel thickness and counterion composition on the properties of OECTs fabricated using electrochemically polymerized PEDOT with p-toluene sulfonate (pTS) and PSS on interdigitated gold electrodes. While PEDOT:PSS films deposited with a particular charge density were somewhat thicker (with more PSS in the film), PEDOT:pTS films showed higher volumetric capacitances consistent with their more rough, irregular surface morphologies. The maximum transconductance (<i>g</i><sub>m,max</sub>) (∼70 mS) and on-current levels barely changed over the examined range of channel thicknesses (100–800 nm) with both counterions. The device stability (current retention in ON/OFF cycling) and transient response times (∼10 ms) were enhanced with larger counterions, thinner channel films (∼100 nm), and lower applied drain voltages (under −0.1 V). These design insights were used to create channel-functionalized OECT-based label-free glucose sensors with high stability. These results demonstrate the ability to optimize and enhance the performance and stability of electrochemically deposited PEDOT-based interdigitated OECT devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8440–8455"},"PeriodicalIF":4.7,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tribovoltaic Energy Harvesting with ZnO Semiconductor–Metal Interfaces: The Role of an Al2O3 Tunnel Barrier Layer ZnO半导体-金属界面的摩擦伏打能量收集:Al2O3隧道势垒层的作用
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2025-09-11 DOI: 10.1021/acsaelm.5c01027
Peter C. Sherrell*, , , Kaspars Ma̅lnieks, , , Artu̅rs Plu̅dons, , , Andrea Merenda, , , Alexander Corletto, , , Kaiwen Zhang, , , Amy A. Gelmi, , , Dumindu G. Dassanayaka, , , James Bullock, , , Holger Fiedler, , and , Andris Šutka*, 
{"title":"Tribovoltaic Energy Harvesting with ZnO Semiconductor–Metal Interfaces: The Role of an Al2O3 Tunnel Barrier Layer","authors":"Peter C. Sherrell*,&nbsp;, ,&nbsp;Kaspars Ma̅lnieks,&nbsp;, ,&nbsp;Artu̅rs Plu̅dons,&nbsp;, ,&nbsp;Andrea Merenda,&nbsp;, ,&nbsp;Alexander Corletto,&nbsp;, ,&nbsp;Kaiwen Zhang,&nbsp;, ,&nbsp;Amy A. Gelmi,&nbsp;, ,&nbsp;Dumindu G. Dassanayaka,&nbsp;, ,&nbsp;James Bullock,&nbsp;, ,&nbsp;Holger Fiedler,&nbsp;, and ,&nbsp;Andris Šutka*,&nbsp;","doi":"10.1021/acsaelm.5c01027","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01027","url":null,"abstract":"<p >Harvesting low-grade motion to convert to electricity has emerged as a critical technology for powering autonomous electronic devices. In particular, the tribovoltaic effect arising from lateral friction across a semiconductor–metal interface has demonstrated great promise for low power devices, with the phenomenon producing large currents but quite low voltages. Zinc oxide (ZnO) is one of the most commonly studied electromechanical materials; however, to date, this semiconductor has been relatively unstudied for tribovoltaic devices. Herein, we demonstrate the fabrication and performance of thin films from ZnO prepared by atomic layer deposition correlated to film thickness and surface coating. The ZnO thin films demonstrate a tribovoltaic current of 0.8 nA in contact with an Au probe, corresponding to a current density of 21 A cm<sup>–2</sup>. The mechanism of the tribovoltaic effect in ZnO was probed by the addition of a 2 nm aluminum oxide layer, which blocks hole transport and acts as a tunnel barrier layer, reducing the theoretical amount of charge recombination and limiting induced (hot) electron transfer from metal to ZnO. This work provides a key report in the use of ZnO for the tribovoltaic effect, offering a pathway to engineering multilayered heterostructures for either preventing or enhancing tribovoltaic charging.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8385–8392"},"PeriodicalIF":4.7,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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