ACS Applied Electronic Materials最新文献

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EDL Supercapacitor Electrode Performance Analysis of Group-VIB and Group-X Transition Metal Adsorbed and Doped Graphene: A Density Functional Theory Based Comparative Investigation 吸附和掺杂 VIB 族和 X 族过渡金属的 EDL 超级电容器电极性能分析:基于密度泛函理论的比较研究
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-10 DOI: 10.1021/acsaelm.4c00906
Abbidi Shivani Reddy, Sandip Bhattacharya, Ankur Bhattacharjee, Sayan Kanungo
{"title":"EDL Supercapacitor Electrode Performance Analysis of Group-VIB and Group-X Transition Metal Adsorbed and Doped Graphene: A Density Functional Theory Based Comparative Investigation","authors":"Abbidi Shivani Reddy, Sandip Bhattacharya, Ankur Bhattacharjee, Sayan Kanungo","doi":"10.1021/acsaelm.4c00906","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00906","url":null,"abstract":"For the first time, the work presents a comprehensive comparative study of different Group-VIB (Cr, Mo, W) and Group-X (Ni, Pd, Pt) transition metal (TM) adsorbed and doped two-dimensional (2D) graphene (Gr) electrodes for electric double layer (EDL) supercapacitor applications using a density functional theory (DFT) based theoretical approach. The work systematically analyzes the stability of adsorption/formation, structural–electronic property correlation, excess charge density (<i>Q</i><sub>exc</sub>), and quantum capacitance (<i>C</i><sub>Q</sub>) variations with local electrode potential. Next, over a standard range of EDL capacitance (<i>C</i><sub>EDL</sub>), the total interfacial capacitance (<i>C</i><sub>T</sub>) variation with respect to <i>C</i><sub>EDL</sub> is analyzed, and the performance of TM adsorbed/doped Gr is extensively benchmarked against pristine Gr. The results indicate that the TM adsorption and doping on Gr are potential material engineering techniques for improving the <i>C</i><sub>Q</sub> and thereby <i>C</i><sub>T</sub>. Specifically, the present work demonstrates that Cr and Mo adsorption and doping are relatively most stable in nature, which further ensures symmetric anode/cathode operation with a large <i>C</i><sub>Q</sub> owing to the introduction of large density of states (DOS) near the Fermi level (<i>E</i><sub>F</sub>). In essence, the work offers detailed theoretical insight on TM adsorption and doping in Gr for systematic electrode performance optimization for high-performance EDL supercapacitor design.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coexistence of Surface Electronic Confinement and Topological States in Sb4Te3 Sb4Te3 中并存的表面电子约束和拓扑状态
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-10 DOI: 10.1021/acsaelm.4c00979
Rafael R. Barreto, Guilherme Rodrigues-Fontenele, Luisa V. C. Freitas, Lucas A. B. Marçal, Wendell S. e Silva, Gilberto Rodrigues-Junior, Douglas R. Miquita, Khadiza Ali, Dina Carbone, Mario S. C. Mazzoni, Angelo Malachias, Rogerio Magalhaes-Paniago
{"title":"Coexistence of Surface Electronic Confinement and Topological States in Sb4Te3","authors":"Rafael R. Barreto, Guilherme Rodrigues-Fontenele, Luisa V. C. Freitas, Lucas A. B. Marçal, Wendell S. e Silva, Gilberto Rodrigues-Junior, Douglas R. Miquita, Khadiza Ali, Dina Carbone, Mario S. C. Mazzoni, Angelo Malachias, Rogerio Magalhaes-Paniago","doi":"10.1021/acsaelm.4c00979","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00979","url":null,"abstract":"Layered materials have attracted significant attention in recent years due to the diverse electronic properties arising from different structural variations. Here, we present angle-resolved photoemission spectroscopy measurements conducted on the topological material Sb<sub>4</sub>Te<sub>3</sub>. This material consists of a composite stacking of two distinct topological materials: the three-dimensional (3D) topological insulator Sb<sub>2</sub>Te<sub>3</sub> and the two--dimensional (2D) topological insulator Sb<sub>2</sub>. Our angle-resolved photoemission spectroscopy measurements combined with density functional theory reveal that the topological behavior exhibited by Sb<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub> persists, characterized by nontrivial topological invariant, electronic states from the spin–orbit coupling, hexagonal warping associated with time reversal symmetry and photon-energy independence in these surface states. By comparing the results with the complete bulk and surface bands, we observe parabolic states associated with the existence of stacking faults. The photon-energy independence of this state indicates confinement along the stacking direction. In essence, we revealed the existence of topological states and confined electrons in the material Sb<sub>4</sub>Te<sub>3</sub> using angle-resolved photoemission spectroscopy experiments.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible Polyethylene Matrix Carbon-based Nanocomposites for Electromagnetic Compatibility 用于电磁兼容性的柔性聚乙烯基质碳基纳米复合材料
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-09 DOI: 10.1021/acsaelm.4c01045
Byron Villacorta, Utsab Ayan, Madara Mohoppu, Bibek Kattel, Elliot Hutchcraft, Mine Ucak-Astarlioglu, Ahmed Al-Ostaz
{"title":"Flexible Polyethylene Matrix Carbon-based Nanocomposites for Electromagnetic Compatibility","authors":"Byron Villacorta, Utsab Ayan, Madara Mohoppu, Bibek Kattel, Elliot Hutchcraft, Mine Ucak-Astarlioglu, Ahmed Al-Ostaz","doi":"10.1021/acsaelm.4c01045","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01045","url":null,"abstract":"The feasibility of carbon nanofibers (CNF) to impart transport properties to a flexible and ductile polyethylene matrix for electromagnetic compatibility (EMC) was assessed in contrast to traditional carbon fibers (CF). Raman spectroscopy and electrical resistivity measurements of the bulk of the carbon fillers showed that commercial Pyrograf-III, PR-19 grade CNF were significantly more amorphous with lower transport properties than Thornel P-55 CF. A range of CNF/polyethylene nanocomposites (concentrations 0–40 wt %) were prepared via twin-screw extrusion and their electrical, dielectric, electrostatic dissipation, electromagnetic shielding, and mechanical properties were investigated. Good dispersion was revealed by electron microscopy, demonstrating the dispersibility of CNFs. PR-19 CNF led to superior surface conductivity and electrostatic dissipation at low concentrations. Nevertheless, the microcomposites prepared with P-55 pitch-based CF led to higher electromagnetic shielding (∼11 dB), electrical conductivities (i.e., surface resistivity of 1.4 × 10<sup>3</sup> Ω/sq), and relative permittivity (72.2–81.5j) at larger concentrations, displaying an in-plane anisotropic behavior. The microcomposites, though, displayed a stiff (modulus ∼1.4 GPa at 40 wt %), weak (breaking strength of only ∼3 MPa at 40 wt %), and brittle behavior (&lt;3% at 40 wt %), whereas the nanocomposites retained acceptable flexibility (modulus ∼1 GPa), strength (∼10 MPa), and ductility (∼30%) at comparable concentrations. This study points out the feasibility of pristine CNFs for flexible thin-wall materials for EMC applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bimodal Crystal Growth of Perovskite from a Lead Bromide–Dimethyl Sulfoxide Complex Precursor for Highly Bright and All-Solution-Processed Light-Emitting Diodes 从溴化铅-二甲基亚砜复合物前驱体中生长出双峰晶体的 Perovskite,用于制造高亮度全溶液法发光二极管
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-09 DOI: 10.1021/acsaelm.4c00777
Ga Eun Kim, Minwoo Park
{"title":"Bimodal Crystal Growth of Perovskite from a Lead Bromide–Dimethyl Sulfoxide Complex Precursor for Highly Bright and All-Solution-Processed Light-Emitting Diodes","authors":"Ga Eun Kim, Minwoo Park","doi":"10.1021/acsaelm.4c00777","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00777","url":null,"abstract":"Perovskite light-emitting diodes (LEDs) have received significant attention for their use in next-generation displays and optical sensors. Methylammonium lead bromide (MAPbBr<sub>3</sub>) emissive layers exhibit excellent green luminance characteristics. However, their bottom–up synthesis from precursor films poses a critical bottleneck in enhancing the device performance and stability. In particular, the intrinsic formation of three-dimensional (3D) MAPbBr<sub>3</sub> crystals degrades the luminance owing to suppressed radiative recombination due to their dense charge-trap sites. In this study, we prepared PbBr<sub>2</sub>(DMSO)<sub>2</sub> complex precursors by recrystallization. Bimodal growth on 3D/nanocrystals was achieved by the rapid crystallization of MAPbBr<sub>3</sub> through intermolecular exchange between MABr and dimethyl sulfoxide (DMSO). The undercoordination of DMSO molecules to Pb<sup>2+</sup> assisted in the rapid and uniform reactions of MABr and PbBr<sub>2</sub>. The resulting morphologies exhibited nanocrystalline layers surrounding the 3D crystals. Owing to the reduced defect density and improved carrier mobility in the emissive layers, the devices achieved an outstanding maximum luminance of 10,403.6 cd m<sup>–2</sup>, a current efficiency of 22.93 cd A<sup>–1</sup>, and an external quantum efficiency of 7.11%. Furthermore, the normalized electroluminance intensity of the encapsulated devices was retained at 85.7% of its initial value after 60 min.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating 通过旋转镀膜沉积在硅基底上的三苯胺薄膜的介电性能和电气特性
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-09 DOI: 10.1021/acsaelm.4c00600
Selcuk Izmirli, Sukru Cavdar, Orhun Dos, Haluk Koralay, Nihat Tugluoglu
{"title":"Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating","authors":"Selcuk Izmirli, Sukru Cavdar, Orhun Dos, Haluk Koralay, Nihat Tugluoglu","doi":"10.1021/acsaelm.4c00600","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00600","url":null,"abstract":"This paper presents a complete analysis of the electrical and dielectric attributes of the Al/TPA/p-Si/Al device fabricated by the spin-coating method. In this study, a p-type silicon (p-Si) wafer measuring 1 in. × 1 in. was utilized as the substrate. A layer of organic triphenylamine (TPA) was deposited onto the p-Si wafer. The p-Si wafer itself had a thickness of 525 μm. The TPA layer, serving as the active material, was deposited to a thickness of 170 nm. Additionally, aluminum (Al) contacts were applied to the structure, with a thickness of 150 nm. The primary objective of the current study was to investigate the electrical and dielectric characteristics of the fabricated device, with a specific emphasis on their dependencies on frequency and voltage. The capacitance and conductance of this device were experimentally evaluated at ambient temperature over a frequency spectrum spanning from 50 to 700 kHz. The dielectric variables, including permittivity, dielectric loss, alternating-current conductance, and electrical modulus, were assessed through capacitance and conductance measurements, considering their frequency dependence. Furthermore, the device underwent impedance analysis, allowing for a comprehensive examination and interpretation of its resistive, inductive, and capacitive properties. In consideration of these findings, the goal is to thoroughly investigate the dielectric and electrical characteristics of the Al/TPA/p-Si/Al device. The aim is for an organic-layered device to make significant contributions to the development of electronic devices for diverse applications in the future.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Adhesive, Self-Healing, and Water-Soluble Polymeric Dry Electrodes for Robust Physiological Signal Monitoring 用于稳健生理信号监测的自粘性、自愈合和水溶性聚合物干电极
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-09 DOI: 10.1021/acsaelm.4c00715
Xingge Yu, Zebang Luo, Xilin Ouyang, Huaidong Ye, Yuxuan Liu, Xijun Jiang, Li Xiang
{"title":"Self-Adhesive, Self-Healing, and Water-Soluble Polymeric Dry Electrodes for Robust Physiological Signal Monitoring","authors":"Xingge Yu, Zebang Luo, Xilin Ouyang, Huaidong Ye, Yuxuan Liu, Xijun Jiang, Li Xiang","doi":"10.1021/acsaelm.4c00715","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00715","url":null,"abstract":"Dry electrodes are vital tools for monitoring physiological signals in various applications. However, conventional dry electrodes encounter various limitations such as insufficient adhesion, poor antidisturbance, and discomfort in wearable electronics. In response to these challenges, this study introduces a polymeric dry electrode with excellent stretchability and low modulus to ensure comfort during signal acquisition. Furthermore, it features a low skin interface impedance, robust adhesion, and self-healing capabilities, ensuring reliable electrophysiological signal collection. The performance of the electrode can be rapidly restored with a self-healing capability when damaged in operation, and it can be broken into fragments when submerged in water after use due to its good solubility. Owing to the low interface impedance, good adhesion, self-healing capability, and water solubility, this dry electrode demonstrates significant advantages in high-quality and comfortable monitoring electrooculograms (EOG), electrocardiograms (ECG), and electromyograms (EMG). It shows the potential to provide reliable technical support for health monitoring and medical diagnosis while also reducing environmental impact.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing Few-Layer and Heterostructure pH-Sensitive 2D-Material Field-Effect Transistors Using a Physics-Based SPICE Compact Model 利用基于物理的 SPICE 紧凑型模型分析少层和异质结构 pH 敏感型二维材料场效应晶体管
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-08 DOI: 10.1021/acsaelm.4c00650
Tamanna Nazeer, Sheikh Aamir Ahsan
{"title":"Analyzing Few-Layer and Heterostructure pH-Sensitive 2D-Material Field-Effect Transistors Using a Physics-Based SPICE Compact Model","authors":"Tamanna Nazeer, Sheikh Aamir Ahsan","doi":"10.1021/acsaelm.4c00650","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00650","url":null,"abstract":"In this work, we introduce a surface-potential (SP)-based compact model designed for two-dimensional (2D)-material-based pH-sensitive field-effect transistors (FETs). To address device electrostatics toward the electrolyte side, we employ Poisson’s equation, site-binding theory, and the Gouy–Chapman–Stern approach. Simultaneously, electrostatics in the channel are handled by integrating 2D density of states and Fermi–Dirac statistics. Our model builds upon our previous work, where we extensively demonstrated a Verilog-A implementation of a physics-based 2D-material FET model, which yielded explicit SP expressions achieved through the Lambert-W function and Halley’s correction method. Additionally, the model computes the drain current by using the drift-diffusion transport model. The explicit nature of our model renders it suitable for SPICE-circuit simulation. Validation of our model is conducted using experimental data from ion-sensitive field-effect transistors (ISFETs) based on various transition-metal dichalcogenide (TMD) materials. The model is also extended to capture the behavior of heterostructure ISFETs wherein a vertical heterostructure is established between different TMD materials. The results demonstrate a high level of agreement between the experimental data and our model predictions, underscoring the model’s accuracy. This model holds promise for practical applications, particularly in the realm of pH sensing using 2D-nanomaterial FETs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices 高性能电子和能源设备的二维材料界面工程
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-08 DOI: 10.1021/acsaelm.4c00562
Geunwoo Hwang, Seungyeon Lee, Subin Lee, Suyeon Cho, Heejun Yang
{"title":"Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices","authors":"Geunwoo Hwang, Seungyeon Lee, Subin Lee, Suyeon Cho, Heejun Yang","doi":"10.1021/acsaelm.4c00562","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00562","url":null,"abstract":"The development of next-generation electronic and energy devices has required unprecedented active channels based on low-dimensional materials. One promising strategy is to use various interfaces in polymorphic 2D materials, which offer lateral and vertical as well as lattice and phase heterostructures with numerous geometries. The research direction has matured in terms of both materials science (i.e., synthesis) and physics (i.e., characterizations), and technological innovations for devices have been demonstrated through extensive studies of 2D materials. Here, we spotlight the critical results and promising approaches toward seamless atomic interfaces of 2D materials and their application in electronic and energy devices with 2D materials-based interfaces. These include homo- and heterophase-based devices such as memristors, resonant tunneling transistors, and electrochemical cells. As the growth process and quality of large-area 2D materials have rapidly improved, our discussion of the current technological progress with 2D materials, their interfaces, and related physics provides timely information to researchers in this field.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring the Ambipolar Charge Carrier Mobility, Mesomorphic, and Gel Properties in Nitrile Extended Quinoxaline and Phenanthro[a]phenazine Discotic Liquid Crystals 探索腈延伸喹喔啉和菲罗[a]吩嗪盘状液晶中的安倍极电荷载流子迁移率、中形和凝胶特性
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-08 DOI: 10.1021/acsaelm.4c00381
Alakananda Patra, Paresh Kumar Behera, Asmita Shah, Dharmendra Pratap Singh, Velayudhan A. Raghunathan, Achalkumar Ammathnadu Sudhakar, Sandeep Kumar
{"title":"Exploring the Ambipolar Charge Carrier Mobility, Mesomorphic, and Gel Properties in Nitrile Extended Quinoxaline and Phenanthro[a]phenazine Discotic Liquid Crystals","authors":"Alakananda Patra, Paresh Kumar Behera, Asmita Shah, Dharmendra Pratap Singh, Velayudhan A. Raghunathan, Achalkumar Ammathnadu Sudhakar, Sandeep Kumar","doi":"10.1021/acsaelm.4c00381","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00381","url":null,"abstract":"A set of cyano-substituted dibenzo-quinoxaline and phenanthro-phenazine discotic mesomorphs have been synthesized, and the impact of ring closure on thermal, optical, electronic, and physical properties has been investigated. Although dibenzo-quinoxaline shows incredible fluorescence and a low-temperature mesophase, a straightforward ring closure has decreased the molecular distortion in the case of phenanthro-phenazine, thereby resulting in a more stable arrangement. A robust columnar hexagonal self-assembly in the phenanthro[<i>a</i>]phenazine compound facilitates a hole mobility of 1.02 × 10<sup>–2</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, which is 100-fold more than that of the dibenzo quinoxaline analogue. This demonstrates the tunability in self-assembly as well as the physical and electronic properties of discotic liquid crystalline materials with a simple modification in the chemical structure. A study of their gelation properties has also been explored, and models of the organization of molecules within the individual fiber in the gel network have been proposed in agreement with X-ray diffraction studies. These two sets of low band gap ambipolar materials have significant potential to be used in the fabrication of various optoelectronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Boron Carbon Nitride-Based Poly β-Cyclodextrin/Sulfur-Doped Quantum Dot-Modified Electrodes for Highly Sensitive Detection of 2-Amino-5-Nitrophenol 用于高灵敏度检测 2-氨基-5-硝基苯酚的氮化硼基聚 β-环糊精/掺硫量子点修饰电极
IF 4.7 3区 材料科学
ACS Applied Electronic Materials Pub Date : 2024-07-06 DOI: 10.1021/acsaelm.4c00510
Geetha Babuprasad, Deepa Padmanabhan Nambiar
{"title":"Boron Carbon Nitride-Based Poly β-Cyclodextrin/Sulfur-Doped Quantum Dot-Modified Electrodes for Highly Sensitive Detection of 2-Amino-5-Nitrophenol","authors":"Geetha Babuprasad, Deepa Padmanabhan Nambiar","doi":"10.1021/acsaelm.4c00510","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00510","url":null,"abstract":"The research presents an electrochemical approach for the highly sensitive determination of 2-amino-5-nitrophenol (ANP) based on the use of a modified electrode comprising a composite of boron carbon nitride (BCN), poly β-cyclodextrin (pβCD), and sulfur-doped graphene quantum dots (SGQDs). Each layer of the developed BCN/pβCD/SGQD-modified electrode was characterized using spectroscopic and microscopic techniques, and the composite electrode demonstrated remarkable sensitivity for the voltammetric detection of the analyte under optimized conditions. Chronoamperometric analysis under dynamic conditions showcased the electrode’s capability for precise ANP sensing in a flow system. The optimized conditions viz. pH of the electrolyte solution and scan rate were employed for both cyclic voltammetry and square wave voltammetry analysis and revealed a linear correlation between anodic current and ANP concentration. Interference studies confirmed the selectivity of the modified electrode toward ANP, in the presence of structurally similar compounds. In addition, the fabricated electrode was tested for detecting ANP levels in real-world matrices like hair dye and tap water. The excellent performance of the developed electrode, with a detection limit of 6.63 × 10<sup>–8</sup> M, positions it as a promising tool for the electrochemical determination of ANP, offering potential applications in environmental monitoring analysis.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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