ACS Applied Electronic Materials最新文献

{"title":"MXene–Transition Metal Dichalcogenide Hybrid Flexible Piezoelectric Nanogenerators for Self-Powered Systems: From Materials Engineering to Device Architectures","authors":"Abhay Singh Rana,&nbsp;Manisha Sharma,&nbsp;Deepak Kumar,&nbsp;Omkar Pawar,&nbsp;Binay Kumar,&nbsp;Sooman Lim,&nbsp;Sanjeev Kumar Sharma","doi":"10.1021/acsaelm.6c01064","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01064","url":null,"abstract":"<p>Growing need for sustainable and autonomous energy solutions has accelerated the advancement of piezoelectric nanogenerator (PENG)-driven self-powered systems. Two-dimensional (2D) materials, particularly MXenes and transition metal dichalcogenides (TMDs), have gained considerable interest because their structural flexibility, tunable surface chemistry, and strong interfacial interactions collectively enhance piezoelectric performance under low-frequency mechanical stimuli. This review systematically discusses recent progress in MXene and TMD-based hybrid flexible PENGs, spanning materials engineering, device architecture, and application-oriented system integration. It emphasizes the correlation between material design and performance, highlighting strategies such as defect engineering, phase modulation, surface functionalization, and interface engineering to improve polarization behavior, charge transport, and energy conversion efficiency. The paper critically analyzes key limitations in practical operation, including oxidation instability, charge screening, leakage pathways, and long-term mechanical degradation. The review further examines advances in flexible architectures and system-level integration, highlighting the role of hybrid PENGs in wearable health monitoring, human-machine interfaces, smart sensors, industrial diagnostics, Internet of Things (IoT), and robotics. Future opportunities are outlined emphasizing scalable fabrication, environmental stability, power-management integration, and reliability validation to accelerate the transition of MXene–TMD flexible PENGs from laboratory prototypes to practical self-powered systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9200–9241"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thiojulolidine Functionalized Benzimidazoline Dopant with Polarizability-Driven Counterion Coulombic Mitigation for High-Performance n-Doped Polymer Thermoelectrics","authors":"Guangwei Gao,&nbsp;Hao Li,&nbsp;Shikai Zhang,&nbsp;Wei Wang,&nbsp;Chun Zhan,&nbsp;Shengqiang Xiao","doi":"10.1021/acsaelm.6c01950","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01950","url":null,"abstract":"<p>One of the fundamental limitations of n-doped thermoelectric polymers lies in Coulombic trapping between dopant counterions and polymer polarons, which severely restricts carrier generation and transport. Herein, we address this through a heteroatom engineering strategy that leverages atomic polarizability to mitigate counterion Coulombic attraction, using the benzimidazoline dopant 1,3-dimethyl-2-(julolidine-9-yl)-2,3-dihydro-1<em>H</em>-benzo[<em>d</em>]imidazole (JLBI) and its sulfur-substituted analogue as a model system for doping the n-type polymer ThDPP-CNBTz. Specifically, replacing 1,7-dimethylene in julolidine with sulfur atoms converts JLBI into 1,3-dimethyl-2-(1,7-dithiajulolidin-9-yl)-2,3-dihydro-1<em>H</em>-benzo[<em>d</em>]imidazoline (S-JLBI). This substitution at the meta positions transforms the localized surface electrostatic potential (ESP) of the JLBI cation into an extended potential in S-JLBI cation due to the dielectric shield from polarizable 3p valence electron cloud of sulfur, thereby weakening the dopant counterion Coulombic trap. The weakened trapping is evidenced by reduced conductivity activation energy across doping concentrations. Consequently, the S-JLBI-doped ThDPP-CNBTz films achieve a maximum power factor of 43.91 μW m^–1 K^–² with a conductivity of 37.83 S cm^–¹, outperforming the JLBI-doped counterpart (34.10 μW m^–¹ K^–², 20.80 S cm^–¹) at the optimized doping level. Overall, this work establishes a blueprint for manipulating cation ESP and resulted counterion Coulombic trap via sulfur heteroatom substitution and highlights S-JLBI as a promising n-dopant for high-performance polymer thermoelectrics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9743–9753"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rational Design of ZnO-Based Thermoelectrics through Multiscale Electron and Phonon Engineering","authors":"Jewook Kim,&nbsp;Myoung Woo Kang,&nbsp;Sunwoo Lee,&nbsp;Dong Gyun Hong,&nbsp;Min Su Kim,&nbsp;Jungmo Kim,&nbsp;Hee Jin Jeong,&nbsp;Seung Yol Jeong,&nbsp;Donghwi Cho,&nbsp;Myungwoo Choi","doi":"10.1021/acsaelm.6c01627","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01627","url":null,"abstract":"<p>ZnO is an attractive n-type oxide thermoelectric material for high-temperature energy harvesting because of its elemental abundance, environmental compatibility, chemical robustness, and thermal stability under oxidizing conditions. Its thermoelectric performance, however, remains constrained by intrinsically high lattice thermal conductivity and by the strong coupling among carrier concentration, carrier mobility, and Seebeck coefficient. Overcoming these limitations requires transport-engineering strategies that suppress phonon-mediated heat conduction, while minimizing penalties to electronic transport. This review critically examines recent advances in ZnO-based thermoelectrics through a multiscale transport-engineering framework. Rather than classifying studies solely by composition, synthesis method, or morphology, we correlate structural length scale with the dominant mechanisms governing electron and phonon transport. Compositional engineering, including cation substitution, anion modification, and defect control, is first discussed in terms of charge carrier optimization, lattice disorder, and point-defect phonon scattering. Grain-boundary and nanopore engineering are then compared as mesoscale approaches for enhancing boundary scattering, while maintaining continuous conductive pathways. Finally, multi-scale nanostructures are highlighted as an emerging design paradigm that integrates point defects, grain boundaries, pores, and heterogeneous interfaces to broaden the phonon-scattering spectrum, while enabling energy-dependent charge carrier filtering. By linking structure, characteristic length scale, transport mechanism, and thermoelectric performance, this review establishes design principles for the rational development of high-performance and thermally stable ZnO-based thermoelectric materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9252–9279"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Sensitive Piezoresistance Conductive Fabric Based on Enhanced PEDOT:PSS/MWCNTs for Electronic Wearable Devices","authors":"Wenxuan Sheng,&nbsp;Haibin Li,&nbsp;Rubai Luo,&nbsp;Jingbo Hu,&nbsp;YiHao Wei,&nbsp;Baofeng Zhao,&nbsp;Yingwei Huang,&nbsp;Xing Zhou","doi":"10.1021/acsaelm.6c01835","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01835","url":null,"abstract":"<p>Conductive fabrics are promising for applications in smart textiles and wearable electronics because they are lightweight, flexible, and easy to integrate. However, constructing a continuous, stable, and highly efficient functional organic/inorganic conductive network within the porous fibrous architecture remains a major challenge for the fabrication of high-performance conductive fabrics. In this study, PEDOT:PSS was modified via a high-speed non-solvent turbulent secondary doping (HNTD) process. Using the modified PEDOT:PSS as the carrier, multiwalled carbon nanotubes (MWCNTs) were loaded into cotton nonwoven fabrics through a simple dip-coating method to fabricate PEDOT:PSS/MWCNTs composite conductive fabrics (PPMF). Through π–π interactions between PEDOT:PSS and MWCNTs, this approach promoted the uniform distribution of MWCNTs throughout the fabric fibers. It also substantially suppressed the flake-like aggregation of doped PEDOT:PSS during solvent evaporation, thereby improving electron transport within the conductive fabric. The resulting PPMF exhibited excellent electrical performance, with a conductivity of 2.96 × 10^–2 S cm^–1. The assembled flexible PPMF pressure sensor exhibited ultrahigh sensitivity (108.15 kPa^–1) and rapid response and recovery times of 18 and 35 ms, respectively. This performance was attributed to the multilevel interwoven network of the cotton fabric and the uniform, synergistic organic/inorganic conductive network, which enabled the effective detection of minute external forces. Moreover, PPMF can be integrated into wearable sensors to monitor movements at different body sites, including large joint motions and subtle facial movements. This work therefore provides a viable strategy for developing next-generation textile electronics and electronic skin.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9680–9689"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spatially Resolved Bound and Free Trion Dynamics in Defect-Engineered WS2 Heterojunctions","authors":"Letícia Mara Vieira Ildefonso,&nbsp;Erika Lira Buthers,&nbsp;Bráulio Soares Archanjo,&nbsp;Cristiano Legnani,&nbsp;Welber Gianini Quirino,&nbsp;Daniel Vasconcelos Pazzini Massote,&nbsp;Indhira Oliveira Maciel,&nbsp;Mohamed-Ramzi Ammar,&nbsp;Benjamin Fragneaud","doi":"10.1021/acsaelm.6c01734","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01734","url":null,"abstract":"<p>Understanding how structural defects influence exciton dynamics in two-dimensional semiconductors is crucial for tailoring their optoelectronic properties toward fast electronic sensing or catalytic applications. In this work, we engineer defects in monolayer WS₂ by selectively introducing point defects using focused ion beam (FIB) lithography, thereby creating a lateral heterostructure composed of pristine and defect-rich regions. We systematically investigate the impact of different defect concentrations on excitonic features and recombination dynamics using steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopies. Our results reveal the coexistence of two distinct trion species with very different lifetimes: defect-bound trions and free-trions. Indeed, TRPL measurements exhibit biexponential decay dynamics, where the fast component is attributed to neutral exciton recombination, while the slower component corresponds to defect-bound charged excitons, also referred to as trions. Controlled defect implantation by FIB irradiation induces localized states that significantly modify trion recombination kinetics. We observe that increasing defect density leads to longer defect-bound trion lifetimes. In contrast, at the pristine-bombarded heterojunction interface, carrier diffusion promotes the formation of free trions associated with delocalized electrons, resulting in faster recombination dynamics. These results highlight that FIB lithography is a powerful tool for defect-engineering and for controlling excitonic recombination dynamics in 2D semiconductors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9603–9613"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible, Low-Cost, and High-Performance Capacitive Pressure Sensor Enabled by Combining Double-Sided Microstructured Electrodes with a Single Soft Dielectric Layer","authors":"Jingxiang Yuan,&nbsp;Weiqi An,&nbsp;Yi Wang,&nbsp;Zaihua Duan,&nbsp;Zhen Yuan,&nbsp;Yadong Jiang,&nbsp;Huiling Tai","doi":"10.1021/acsaelm.6c01842","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01842","url":null,"abstract":"<p>To address the trade-off between high sensitivity and wide linear detection range, as well as the fabrication complexity and mechanical instability of traditional microstructure engineering in flexible capacitive pressure sensors, this work constructs a flexible, low-cost, and high-performance capacitive pressure sensor enabled by double-sided microstructured electrodes combined with a single soft dielectric layer derived from a nitrile protective glove. The results show that the proposed flexible capacitive pressure sensor has a wide pressure detection range of 0.1–180 kPa with sensitivities of 0.95 kPa^–1 (0–30 kPa) and 0.13 kPa^–1 (30–180 kPa). In addition, it exhibits a low detection limit of approximately 2.5 Pa, negligible drift after 5000 loading–unloading cycles at 10 kPa, and good batch consistency. The pressure sensing mechanism is elucidated based on the changes in microstructure morphology and finite element analysis results. The proposed flexible capacitive pressure sensor is finally demonstrated for various applications such as step counting, Morse code generation, wrist pulse, and respiratory pattern discrimination. This work provides a simple and low-cost approach for fabricating high-performance flexible capacitive pressure sensors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9690–9699"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial Band Engineering in Solution-Processed CsPbBr3/Cs2AgBiBr6 Thin-Film Heterostructure for X-ray Detectors with High Sensitivity and Reduced Dark Current","authors":"Sellan Premkumar,&nbsp;Krishnaraj Lavanya,&nbsp;Ganapathi Bharathi,&nbsp;Sakthivel Chandrasekar,&nbsp;Pitchaikannu Venkatraman,&nbsp;Din Nasrud,&nbsp;Devaraj Nataraj,&nbsp;Byung Seong Bae,&nbsp;Damian Chinedu Onwudiwe,&nbsp;Lei Wei","doi":"10.1021/acsaelm.6c01631","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01631","url":null,"abstract":"<p>Metal halide perovskites are promising materials for direct X-ray detection owing to their strong X-ray absorption, solution processability, and efficient charge separation and transport. However, thin-film perovskite detectors usually suffer from trap-assisted recombination and grain-boundary-limited charge transport, while single-crystal devices often show relatively high dark current. Herein, we report a solution-processed CsPbBr₃/Cs₂AgBiBr₆ heterostructure thin-film X-ray detector with suppressed leakage current and improved charge extraction through interfacial band engineering. Structural, optical, and morphological analyses confirmed the formation of crystalline perovskite films with a well-defined CsPbBr₃/Cs₂AgBiBr₆ interface. Under X-ray irradiation, the CsPbBr₃/Cs₂AgBiBr₆ heterostructure device exhibited the photocurrent values of ∼4.57–9.52 nA over the dose rate of 120 to 600 µGy s^–1. Although this photocurrent is lower than that of the single-crystal device, the hybrid detector exhibited better device performance with improved sensitivity and good signal-to-noise-relevant performance. The heterostructure thin film detector has achieved sensitivities of 171, 112, and 92 µC Gy^–1 cm^–2 at dose rates of 120, 240, and 360 µGy s^–1, respectively. Based on the SNR = 3 detection criterion, the heterostructure exhibited the lowest detectable dose rate of 34.9 µGy s^–1. These results demonstrate that CsPbBr₃/Cs₂AgBiBr₆ heterostructure engineering provides a practical strategy for developing low-dark-current, high-sensitivity perovskite thin-film X-ray detectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9542–9553"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Beyond Passive Reliability: Repeated Electron Wind Force Rejuvenation of GaN HEMTs","authors":"Xinwei Wang,&nbsp;Nicholas Glavin,&nbsp;Fan Ren,&nbsp;Douglas E. Wolfe,&nbsp;Aman Haque","doi":"10.1021/acsaelm.6c01391","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01391","url":null,"abstract":"<p>Performance degradation in electronic devices is caused by nucleation and accumulation of electrically active defects and traps. This spotlight on applications introduces a novel paradigm to actively reverse the damage process with electron wind force (EWF). EWF is a nonintrusive and nonequilibrium mechanism for defect migration at near-ambient average temperatures. Enhancement-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) were systematically degraded via high-temperature storage at 310 °C, which induced upto 13% reduction in drain current, 0.2 V negative threshold voltage shift, and 12% reduction in peak transconductance. A brief 1-minute application of EWF achieved full parameter recovery. Crucially, across five consecutive degradation-rejuvenation cycles, the HEMTs maintained excellent resilience, retaining 98.5% of their initial drain current, 97% of peak transconductance, 95% of gate-lag, and 93% of drain-lag responses. These findings indicate that periodic in operando EWF rejuvenation may realize unprecedented reliability of wide-bandgap electronics in mission-critical operations.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9179–9188"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Porous PDMS/SrTiO3 Composite Triboelectric Nanogenerators toward Self-Powered Information Encoding and Intelligent Gesture Recognition","authors":"Mouyue Zhu,&nbsp;Hongji Guan,&nbsp;Ziliang Xie,&nbsp;Qiyuan Zong,&nbsp;Kexin Chen,&nbsp;Shenyu Qiu,&nbsp;Xuan Peng,&nbsp;Wenchao Zhai,&nbsp;Wei Li","doi":"10.1021/acsaelm.6c01510","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01510","url":null,"abstract":"<p>Rapid advances in wearable human–machine interaction (HMI) and internet of things (IoT) systems are severely limited by the short service life, poor mechanical conformability, and environmental drawbacks of conventional battery-powered sensing devices. Triboelectric nanogenerators (TENGs) offer a compelling self-powered sensing alternative, yet real-world deployment is hindered by insufficient surface charge density and inadequate mechanical compliance of prevailing polymer friction layers. Herein, we adopt a facile sacrificial salt template strategy to fabricate flexible, three-dimensionally interconnected porous polydimethylsiloxane/strontium titanate (PDMS/SrTiO₃) composite films for simultaneously boosting triboelectric output performance and mechanical compliance. The interconnected porous architecture greatly enlarges the effective contact area and improves elastic deformability of the active layer, while uniformly dispersed high-dielectric SrTiO₃ nanoparticles reinforce dielectric polarization and interfacial charge retention. The optimized dual-structured TENG (DS-TENG) delivers a peak open-circuit voltage (<em>V</em>_OC) of 178 V and a maximum power density of 450 mW/m², retaining stable electrical stability over 20,000 continuous contact-separation cycles. Leveraging the high signal fidelity of DS-TENG, we demonstrate a wearable self-powered Morse code communication system, which encodes all 26 Latin alphabet letters from finger flexion-derived electrical signals. Furthermore, a five-channel DS-TENG sensor array integrated with continuous wavelet transform (CWT) and squeeze-and-excitation convolutional neural network (SE-CNN) achieves 92% training accuracy and 87% validation accuracy for recognizing ten complex numeric hand gestures. This work establishes an integrated self-powered sensing framework that bridges material–interface engineering with deterministic information encoding and data-driven gesture recognition, providing a feasible route toward practical wearable human–machine interaction hardware.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9398–9408"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Boron Carbon Oxynitride Nanosheets and Porphyrin Hybrid: A Promising Material for Optical Limitingand Optoelectronic Applications","authors":"Ravina Beniwal,&nbsp;Hadeel Alamoudi,&nbsp;Debasish Biswasray,&nbsp;Vara Prasad Rebaka,&nbsp;Kishor Upadhyaya,&nbsp;Vijay Kumar Gudelli,&nbsp;Venkatramaiah Nutalapati,&nbsp;Iman S. Roqan,&nbsp;Bala Murali Krishna Mariserla","doi":"10.1021/acsaelm.6c02083","DOIUrl":"https://doi.org/10.1021/acsaelm.6c02083","url":null,"abstract":"<p>Next-generation multifunctional optoelectronic devices demand miniaturization, efficiency, and tunability, driving the exploration of novel material platforms. Two-dimensional (2D) materials and their functionalization offer tailored and unprecedented electronic, optical, and mechanical properties. Among the diverse family of 2D materials, boron carbon oxynitride (BCNO) stands out due to its strong UV to visible-range absorption. However, its functionalization remains largely unexplored despite its inherent ability to host electrostatic, π–π, and hydrogen-bonding interactions. In this work, we report on the functionalization of 2D BCNO nanosheets with porphyrin (TSPP), a molecule offering strong donor–acceptor interactions. The resulting 2D BCNO–TSPP hybrid exhibits an efficient interfacial nonradiative excitation-energy transfer, facilitated by the spectral overlap between 2D-BCNO emission and TSPP absorption, resulting in pronounced photoluminescence modulation. This hybrid demonstrates a 2-fold enhancement in photocurrent and an attractive low optical limiting threshold of 176 μJ/cm² under 400 nm excitation using 200 fs pulses, attributed to strong reverse saturable absorption. This represents a significant improvement compared to the limiting thresholds of 2D BCNO (300 μJ/cm²) and TSPP (260 μJ/cm²), highlighting the prominent enhancement in the hybrid. Addition of different concentrations of TSPP to 2D BCNO through the ultrasonication process leads to a pronounced photoluminescence quenching accompanied by a red shift in the emission band. This tunable emission, combined with the increased absorption centers introduced by TSPP, further strengthens the optical limiting response. Together, these multifunctional properties establish the 2D BCNO–TSPP hybrid as a promising platform for future advanced optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9768–9781"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}