ACS Applied Electronic Materials最新文献

{"title":"\"Nano-In-Nano\" Schottky Diodes Fabricated by Combining Self-Aligned Nanogap Patterning with Bottom-Up ZnO Nanowire Growth.","authors":"Umer Farooq Ahmed, Gwenhivir S Wyatt-Moon, Andrew J Flewitt","doi":"10.1021/acsaelm.4c01609","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01609","url":null,"abstract":"<p><p>Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of defects that are present in such small volumes of material. However, these advantages can only be realized if reliable contacts can be made to the nanoscale semiconductor using a scalable, low-cost process. Although there are many low-cost \"bottom-up\" techniques for directly growing nanomaterials, the fabrication of contacts at the nanoscale usually requires expensive and slow techniques like e-beam lithography that are also hard to scale to a level of throughput that is required for commercialization. A scalable method of fabricating such devices is demonstrated in this work by combining two bottom-up fabrication techniques. ZnO nanowire Schottky diodes are produced with a device length of a few tens of nanometers and a performance significantly exceeding a ZnO thin film equivalent. The first technique is adhesion lithography that allows self-aligned coplanar electrodes of different materials to be patterned with a nanogap ∼10 to 50 nm length between the two. In this case, one electrode is gold, while the other is a bilayer of titanium on a thin film of ZnO, and it is this thin film that allows the second technique, hydrothermal growth, to be used to grow ZnO nanowires directly across the nanogap. The resulting \"nano-in-nano\" Schottky diodes have a high rectification ratio >10⁴, a low turn-on voltage <0.3 V, and a minimal off-state current <10 pA. This process could be used to realize a variety of nano-in-nano electronic devices in the future, including short channel gate-all-around (GAA) transistors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 1","pages":"143-149"},"PeriodicalIF":4.3,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11736788/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142996028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrically Modulated Multilevel Optical Chirality in GdFeCo Thin Films.","authors":"Jun-Xiao Lin, Bo-Jun Chen, Shih-Min Hung, Wei-Hsiang Liao, Michel Hehn, Shih-Jye Sun, Yu-Ying Chang, Thomas Hauet, Julius Hohlfeld, Stéphane Mangin, Hua-Shu Hsu","doi":"10.1021/acsaelm.4c01642","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01642","url":null,"abstract":"<p><p>This study introduces a simple approach to dynamically control multilevel optical ellipticity in ferrimagnetic GdFeCo alloys by switching the spin orientation through Joule heating induced by electrical current, with the assistance of a low magnetic field of 3.5 mT. It is demonstrated that selecting specific compositions of Gd _<i>x</i> (FeCo)_100-<i>x</i> alloys, with magnetic compensation temperatures near or above room temperature, allows for significant manipulation of the circular dichroism (CD) effect. This control enables the transformation of transmitted light from linearly polarized to elliptically polarized or the reversal of the rotation direction of elliptically polarized light across the photon energy range from visible (vis) to ultraviolet (UV). The efficacy of this method is rooted in the dominant contributions of FeCo to the CD effect in the vis-to-UV energy range. Because the magnetization of FeCo remains relatively independent of the temperature, substantial optical ellipticity is maintained for optical device applications, regardless of whether the compensation temperature is approached or crossed. Our results highlight the potential of GdFeCo thin films in chiral optics and demonstrate the selective contributions of rare-earth transition-metal elements to the CD effects, facilitating the design of advanced optical devices leveraging energy-resolved CD phenomena.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 1","pages":"177-184"},"PeriodicalIF":4.3,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11736793/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142996030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding the Effect of Electron Irradiation on WS₂ Nanotube Devices to Improve Prototyping Routines.","authors":"Martin Kovařík, Daniel Citterberg, Estácio Paiva de Araújo, Tomáš Šikola, Miroslav Kolíbal","doi":"10.1021/acsaelm.4c01450","DOIUrl":"10.1021/acsaelm.4c01450","url":null,"abstract":"<p><p>To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials. In this experimental study, we analyze the effect of electron beam exposure on electrical properties of individual WS₂ nanotubes in the FET configuration by in-operando transport measurements inside a scanning electron microscope. Upon exposure to the electron beam, we observed a significant change in the resistance of individual substrate-supported nanotubes (by a factor of 2 to 14) that was generally irreversible. The resistance of each nanotube did not return to its original state even after keeping it under ambient conditions for hours to days. Furthermore, we employed Kelvin probe force microscopy to monitor surface potential and identified that substrate charging is the primary cause of changes in nanotubes' resistance. Hence, extra care should be taken when analyzing nanostructures in contact with insulating oxides that are subject to electron exposure during or after fabrication.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 12","pages":"8776-8782"},"PeriodicalIF":4.3,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11673106/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142902378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.","authors":"Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarrete, Günter Hesser, Heiko Groiss, Maciej O Liedke, Maik Butterling, Andreas Wagner, Eric Hirschmann, Cedric Corley-Wiciak, Marvin H Zoellner, Giovanni Capellini, Thomas Fromherz, Moritz Brehm","doi":"10.1021/acsaelm.4c01678","DOIUrl":"10.1021/acsaelm.4c01678","url":null,"abstract":"<p><p>Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures (<i>T</i> _Ge = 100-350 °C) and pristine growth pressures (≲10^-10 mbar). First, we show that a decreasing <i>T</i> _Ge does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage (Θ_Ge, 1, 2, 4, 8, 12, and 16 nm) and <i>T</i> _Ge (100-300 °C, in increments of 50 °C) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning X-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultralow temperatures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 12","pages":"9029-9039"},"PeriodicalIF":4.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11673087/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142902340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Brief Report: Increasing Intraverbal Responses to Subcategorical Questions via Tact and Match-to-Sample Instruction.","authors":"Gabrielle T Lee, Xiaoyi Hu, Chun Shen","doi":"10.1007/s10803-022-05827-1","DOIUrl":"10.1007/s10803-022-05827-1","url":null,"abstract":"<p><p>The purpose of the study was to evaluate the effects of tact and match-to-sample instructions on the increase and maintenance of intraverbal responses to subcategorical questions (i.e., naming multiple items in a subcategory of a category). Three Chinese children on the autism spectrum (2 boys, 1 girl, aged 6-8 years old) participated in this study. Results indicated that intraverbal responses to subcategorical questions emerged or increased for most subcategories for all three participants following the completion of instruction without direct training.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"4740-4751"},"PeriodicalIF":3.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"40490100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"What Sir William Battle Found: Observations Beyond his Sign.","authors":"Eelco F M Wijdicks","doi":"10.1007/s12028-021-01435-6","DOIUrl":"10.1007/s12028-021-01435-6","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"1106-1109"},"PeriodicalIF":4.3,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"39925265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Validation of the Vietnamese version of the low anterior resection syndrome score questionnaire.","authors":"Tuong-Anh Mai-Phan, Vu Quang Pham","doi":"10.3393/ac.2022.00514.0073","DOIUrl":"10.3393/ac.2022.00514.0073","url":null,"abstract":"<p><strong>Purpose: </strong>The aim of this study was to validate the low anterior resection syndrome (LARS) score questionnaire in the Vietnamese language among Vietnamese patients who underwent sphincter-preserving surgery for rectal cancer.</p><p><strong>Methods: </strong>The LARS score questionnaire was translated from English into Vietnamese and then back-translated as recommended internationally. From January 2018 to December 2020, 93 patients who underwent sphincter-preserving surgery completed the Vietnamese version of the LARS score questionnaire together with an anchored question assessing the influence of bowel function on quality of life. To validate test-retest reliability, patients were requested to answer the LARS score questionnaire twice.</p><p><strong>Results: </strong>Ninety-three patients completed the LARS score questionnaire, of whom 89 responded twice. The patients who responded twice were included in the analysis of test-retest reliability. Fifty-eight patients had a \"major\" LARS score. The LARS score was able to discriminate between patients who were obese and those who were not (P<0.001) and between the LAR and AR procedures (P<0.001). Age and sex were not associated with higher LARS scores (P=0.975). There was a perfect fit between the quality of life category question and the LARS score in 56.2% of cases, and a moderate fit was found in 42.7% of cases, showing reasonable convergent validity. The test-retest reliability of 89 patients showed a high intraclass correlation coefficient.</p><p><strong>Conclusion: </strong>The Vietnamese version of the LARS score questionnaire is a valid tool for measuring LARS.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"588-593"},"PeriodicalIF":4.3,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"40722418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of the Chemical Structure of Perylene Derivatives on the Performance of Honey-Gated Organic Field-Effect Transistors (HGOFETs) and Their Application in UV Light Detection.","authors":"Jose Diego Fernandes Dias, Douglas Henrique Vieira, Theodoros Serghiou, Carlos J Rivas, Carlos J L Constantino, Liliana B Jimenez, Neri Alves, Jeff Kettle","doi":"10.1021/acsaelm.4c01773","DOIUrl":"10.1021/acsaelm.4c01773","url":null,"abstract":"<p><p>Electronics based on natural or degradable materials are a key requirement for next-generation devices, where sustainability, biodegradability, and resource efficiency are essential. In this context, optimizing the molecular chemical structure of organic semiconductor compounds (OSCs) used as active layers is crucial for enhancing the efficiency of these devices, making them competitive with conventional electronics. In this work, honey-gated organic field-effect transistors (HGOFETs) were fabricated using four different perylene derivative films as OSCs, and the impact of the chemical structure of these perylene derivatives on the performance of HGOFETs was investigated. HGOFETs were fabricated using naturally occurring or low-impact materials in an effort to produce sustainable systems that degrade into benign end products at the end of their life. It is shown that the second chain of four carbons at the imide position present in perylenes <i>N</i>,<i>N</i>'-bis(5-nonyl)-perylene-3,4,9,10-bis(dicarboximide) (PDI) and <i>N</i>,<i>N</i>'-bis(5-nonyl)-1-naphthoxyperylene-3,4,9,10-bis(dicarboximide) (PDI-ONaph) reduces π-stacking interaction in the active layer, leading to lower AC conductivity and the non-functionality of HGOFETs. On the other side, the chain-on molecular orientation in the film of <i>N</i>,<i>N</i>'-dibutylperylen-3,4:9,10-bis(dicarboximide) (BuPTCD) was fundamental for the efficiency of HGOFETs, showing a better performance than the HGOFETs of <i>N</i>,<i>N</i>'-bis(2-phenylethyl)-3,4:9,10-bis(dicarboximide) (PhPTCD), which has a face-on molecular orientation. Finally, the HGOFETs of BuPTCD and PhPTCD are good candidates as UV light detectors and are used for the detection of UV radiation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 12","pages":"9142-9153"},"PeriodicalIF":4.3,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11673095/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142902305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1530 nm Electroluminescence from Metal–Semiconductor–Metal Structured Devices Based on Oxygen–Erbium Co-doped MoS2","authors":"Lei Wang,&nbsp;Xiaohong Ji* and Qinyuan Zhang,&nbsp;","doi":"10.1021/acsaelm.4c0169910.1021/acsaelm.4c01699","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01699https://doi.org/10.1021/acsaelm.4c01699","url":null,"abstract":"<p >The 1530 nm emission of the Er intra-4f transition (⁴I_13/2 → ⁴I_15/2) is essential for telecom communication because it corresponds to the minimum-loss window of silica optical fibers. Herein, we develop a metal–semiconductor–metal structured light source based on O–Er co-doped MoS₂. The electroluminescence device exhibits the 1530 nm emission at low drive voltages (&lt;5 V), which is beneficial from the impact excitation with the space–charge-limited conduction mechanism. The characteristic of symmetric structure allows the devices to exhibit consistent electrical and electroluminescence performance at positive and negative voltages. The O doping contributes to such high-current electrical behavior, and the Er doping leads to increased trap-filled-limited voltage due to increased trap density. This work lays the foundation for developing near-infrared light sources constructed with two-dimensional materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8474–8480 8474–8480"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Induced Spin Pumping and Inverse Spin Hall Effect in Single FePt Thin Films","authors":"José Luis Ampuero*,&nbsp;Alberto Anadón,&nbsp;Héloïse Damas,&nbsp;Jaâfar Ghanbaja,&nbsp;Sébastien Petit-Watelot,&nbsp;Juan-Carlos Rojas-Sánchez*,&nbsp;Daniel Velázquez Rodriguez,&nbsp;Javier Gómez,&nbsp;Alejandro Butera* and Luis Avilés-Félix,&nbsp;","doi":"10.1021/acsaelm.4c0155510.1021/acsaelm.4c01555","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01555https://doi.org/10.1021/acsaelm.4c01555","url":null,"abstract":"<p >Self-induced spin Hall effect and self-torque hold great promise in the field of spintronics, offering a path toward highly efficient spin-to-charge interconversion, a pivotal advancement for data storage, sensing devices, or unconventional computing. In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pumping voltage signal is consistent with a typical bilayer with a positive spin Hall angle layer such as that of Pt on top of a ferromagnet (FM), substrate//FM/Pt. Structural analysis shows a composition gradient due to natural oxidation at both FePt interfaces, with the Si substrate and with the air. The FePt-thickness dependence of the self-induced charge current produced allowed us to obtain λ_FePt = (1.5 ± 0.1) nm and self-induced θ_self-FePt = 0.047 ± 0.003, with efficiency for reciprocal effects applications θ_self-FePt × λ_FePt = 0.071 nm which is comparable to that of Pt, θ_SH-Pt × λ_Pt = 0.2 nm. The spin pumping voltage is also observed in a symmetrical stacking, Al/FePt/Al with a lower overall efficiency. Moreover, by studying bilayer systems such as Si//FePt/Pt and Si//Pt//FePt we independently could extract the individual contributions of the external inverse spin Hall effect of Pt and the self-induced inverse spin Hall effect of FePt. Notably, this method gives consistent values of charge currents produced due to only self-induced inverse spin Hall effect in FePt layers. These results advance our understanding of spin-to-charge interconversion mechanisms in composite thin films and pave the way for the development of next-generation spintronics devices based on self-torque.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8298–8308 8298–8308"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}