ACS Applied Electronic Materials最新文献

{"title":"Trace NO2 Detection in Ambient Air Using Co-Phthalocyanine-Modified Graphene Field-Effect Transistors","authors":"Kazuki Kikawada,&nbsp;Naoki Yazawa,&nbsp;Ryudai Nakanishi,&nbsp;Kenzo Maehashi* and Takashi Ikuta*,&nbsp;","doi":"10.1021/acsaelm.5c0011410.1021/acsaelm.5c00114","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00114https://doi.org/10.1021/acsaelm.5c00114","url":null,"abstract":"<p >The sensitive detection of NO₂ in air is crucial for controlling environmental pollution and protecting public health. Therefore, a simple and sensitive method for detecting NO₂ must be developed. In this study, we fabricated phthalocyanine (Co, Cu, Ni, and H₂)-modified graphene field-effect transistors (FETs) for NO₂ detection at the parts-per-billion (ppb) level. Compared with other phthalocyanine-modified devices, the Co-phthalocyanine-modified graphene FET exhibited large voltage shifts in its transfer characteristics following the introduction of NO₂ gas at the ppb level. The Dirac-point voltage shifts observed at each NO₂ concentration tested were well fitted to the Langmuir adsorption isotherm, indicating that the Co-phthalocyanine-modified graphene FET was capable of quantitatively detecting NO₂ at concentrations ranging from a few ppb to the sub-ppm level, corresponding to environmental standards. In addition, the Co-phthalocyanine-modified graphene FET demonstrated high selectivity for NO₂ and maintained excellent sensing characteristics even after repeated use. The NO₂-sensing performance of the Co-phthalocyanine-modified graphene FET was not significantly degraded in air (0–25% relative humidity (RH)), and the device could quantitatively detect NO₂ with high sensitivity even in 40% RH air. Considering these results, the Co-phthalocyanine-modified graphene FET could enable the highly sensitive detection of NO₂ at the ppb level in ambient air with humidity.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3828–3836 3828–3836"},"PeriodicalIF":4.3,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Polyacrylamide Hydrogel-Based Wearable Sensors for Electrocardiography Monitoring and Motion Sensing","authors":"Saurabh Soni,&nbsp;Riya Wadhwa,&nbsp;Manish Rishi,&nbsp;Jayant Kalra,&nbsp;Aditya Teja,&nbsp;Dhiraj Devidas Bhatia and Dipti Gupta*,&nbsp;","doi":"10.1021/acsaelm.5c0024510.1021/acsaelm.5c00245","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00245https://doi.org/10.1021/acsaelm.5c00245","url":null,"abstract":"<p >Conductive hydrogels have gained significant attention due to their remarkable properties, including stretchability, self-adhesiveness, deformability, and cost-effectiveness. However, existing hydrogel-based sensors often suffer from limited biocompatibility, poor mechanical strength, and inadequate adhesion, limiting their suitability for wearable electronics. Herein, we report a highly conductive, skin-friendly hydrogel electrode for real-time electrocardiography (ECG) and motion monitoring. The hydrogel is based on a polyacrylamide (PAM) network incorporated with the conductive polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS). The PAM–PEDOT:PSS hydrogel exhibited exceptional mechanical properties, with tensile strengths of 5–68 kPa at corresponding strains of 142 to 646%. It also demonstrated excellent biocompatibility, gentle skin adhesion, and optimized mechanical performance by tailoring the cross-linker concentration (<i>N</i>,<i>N</i>-methylene Bis(acrylamide)) in the PAM matrix. Notably, the hydrogel exhibited low hysteresis (&lt;3%) under stress–strain cycling, ensuring reliable performance during repeated deformation. Wearable hydrogel electrode testing showed a strong correlation (99.6%) between recorded ECG signals and those from commercial electrodes. Additionally, the fabricated strain sensors exhibited high sensitivity, an extensive sensing range (0–646% strain), rapid response, and outstanding stability. These features enable precise monitoring of diverse physical signals, from large-scale joint movements to subtle muscle contractions. This work presents a promising approach for developing flexible strain sensors and electronic skins, advancing next-generation wearable devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4025–4034 4025–4034"},"PeriodicalIF":4.3,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Performances of Room Temperature Gas Sensor by Indium Doping of P3HT/ZnO Hybrid Nanocomposites","authors":"Maher Jdir,&nbsp;Marwa El Beji,&nbsp;Saba Aziz,&nbsp;Mohsen Erouel*,&nbsp;Slah Mansouri,&nbsp;Anna Grazia Monteduro,&nbsp;Giuseppe Maruccio and Lassaad El Mir*,&nbsp;","doi":"10.1021/acsaelm.5c0025210.1021/acsaelm.5c00252","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00252https://doi.org/10.1021/acsaelm.5c00252","url":null,"abstract":"<p >Hybrid films of poly(3-hexylthiophene) (P3HT)/indium-doped zinc oxide (IZO) and undoped ZnO were developed in this work for the detection of volatile organic compounds at room temperature. Indium-doped and undoped ZnO nanoparticles were synthesized using the sol–gel method and mixed with P3HT before deposition using the spin-coating technique on interdigitated electrodes to form the hybrid sensing layers. The obtained films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy, confirming the presence of P3HT/ZnO hybrid phase and well-dispersed particle structures with nanometric size in the composite thin films. The sensing properties of the sensors were studied for the reduction of gas (ethanol) at room temperature. In particular, the composite P3HT/IZO_1% exhibits a maximum response of 104% and a fast response time of about 58 s to 3000 ppm of ethanol concentration at room temperature.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4035–4048 4035–4048"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Skin-Mountable and Self-Healable Hydrogel for Strain Sensing","authors":"Xu Yang,&nbsp;Hui Zhang,&nbsp;Ziang Wang,&nbsp;Xiaopeng Sun and Hengchao Ren*,&nbsp;","doi":"10.1021/acsaelm.5c0055410.1021/acsaelm.5c00554","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00554https://doi.org/10.1021/acsaelm.5c00554","url":null,"abstract":"<p >The rapid advancement of wearable electronic devices has heightened the demand for flexible strain sensors with high sensitivity, stretchability, biocompatibility, self-adhesion, self-healing, and water-retention capabilities. However, existing sensors often fall short in these areas, particularly in maintaining stable skin contact, self-repair, and long-term hydration, limiting their practical applications. To address these challenges, we developed a BMIM-BF4/PEDOT:PSS/gelatin/PVA hydrogel (BPGPH) with a double-network structure. This hydrogel exhibits exceptional mechanical properties, enduring up to 400% strain and 318 kPa stress, and maintains its integrity and performance over 12 days due to glycerol-enhanced water retention. With a gauge factor of 0.29, BPGPH demonstrates high sensitivity across 0–300% strain, enabling precise detection of human motions. Its self-adhesion and self-healing properties, driven by abundant hydroxyl groups, further enhance its suitability for applications in gesture recognition and human–computer interaction. The synergistic effect of ionic liquids and conductive polymers ensures stable conductivity, while the multinetwork structure provides robustness and flexibility. These features make BPGPH a promising candidate for next-generation wearable sensors in healthcare monitoring, human–machine interfaces, and sports performance tracking.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4371–4381 4371–4381"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Versatility of Spin-Logic and High-Density Multistate Memory Enabled by a Single Spin–Orbit Torque Device","authors":"Raghvendra Posti,&nbsp;Athira Ravindran K,&nbsp;Dhananjay Tiwari and Debangsu Roy*,&nbsp;","doi":"10.1021/acsaelm.5c0021910.1021/acsaelm.5c00219","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00219https://doi.org/10.1021/acsaelm.5c00219","url":null,"abstract":"<p >Non-volatile devices based on the spin–orbit torque (SOT) mechanism are suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same memory unit. The present study demonstrates that integrating SOT with an out-of-plane magnetic field effectively achieves multiple magnetic states in perpendicularly magnetized heterostructures. This study further explores this approach, experimentally demonstrating versatile logic operations within a single SOT device using W/Pt/Co/AlO_<i>x</i> heterostructures. Our results show that multistate tuning by SOT integration with an out-of-plane magnetic field enables versatility in logic operations, including AND, OR, NOR, NAND, and Always ON, within a single device. Additionally, we found that the careful selection of input logic operations allows multiple configurations to achieve the same logic function within a single memory device. To enhance the multistate memory density, we proposed and experimentally verified a two-step writing process, achieving the highest reported multistate memory density in SOT-based memory devices. These findings highlight the potential of integrating SOT and magnetic field effects to realize high-density, multifunctional, in-memory logic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3955–3962 3955–3962"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial Reaction-Associated Sample Quality and Superconductivity in Bi2Te3–FeTe Thin Films","authors":"Wenyu Hu,&nbsp;Jie Jiang,&nbsp;Xinru Han,&nbsp;Hangyu Yin,&nbsp;Zijun Yan,&nbsp;Xiaoyi Wang*,&nbsp;Yang Qiu* and Gan Wang*,&nbsp;","doi":"10.1021/acsaelm.5c0058810.1021/acsaelm.5c00588","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00588https://doi.org/10.1021/acsaelm.5c00588","url":null,"abstract":"<p >The realization of atomic arrangement at the van der Waals interface is of importance in the exploration of interfacial superconductivity. Here, by epitaxy of Bi₂Te₃/FeTe heterostructures with different interface qualities, the corresponding atomic images and electron energy loss spectra evidence the relationship between interfacial chemical reaction and interface quality. Interfacial chemical reaction will cause the stoichiometric ratio imbalance of the FeTe layer and produce a large number of interstitial iron-related defects. When FeTe is employed as the growth substrate, it is crucial to maintain stable growth parameters for the Bi₂Te₃ layer. Conversely, when the Bi₂Te₃ layer serves as the growth substrate, ensuring a balanced stoichiometric ratio within the Bi₂Te₃ layer becomes paramount. This approach minimizes the extent of interface reactions and guarantees the stable presence of the superconducting phase at the interface. This work provides insights into the underlying relationship between interface structure and superconductivity in Bi₂Te₃/FeTe, and it reveals the possible mechanism by which neighboring telluride layers affect the topological superconductivity of FeTe heterostructures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4382–4390 4382–4390"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Bi-Doped NiFe2O4 Nanoparticles for Advanced Supercapacitors and Room-Temperature Magnetic Memory Applications","authors":"Tsu-En Hsu,&nbsp;Krishtappa Manjunatha*,&nbsp;Ming-Kang Ho,&nbsp;Hsin-Hao Chiu,&nbsp;Shih-Lung Yu,&nbsp;Bing-Li Lyu,&nbsp;Yun-Tai Yu,&nbsp;Heng-Chih Kuo,&nbsp;Shuan-Wei Yu,&nbsp;Chia-Liang Cheng,&nbsp;Shidaling Matteppanavar,&nbsp;Hanumanthappa Nagabhushana,&nbsp;Meng-Chu Chen,&nbsp;Yue-Lin Huang and Sheng Yun Wu*,&nbsp;","doi":"10.1021/acsaelm.5c0002110.1021/acsaelm.5c00021","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00021https://doi.org/10.1021/acsaelm.5c00021","url":null,"abstract":"<p >This study investigates the synthesis, characterization, and application of NiFe_2-xBi_<i>x</i>O₄ nanoparticles (NPs) with varying bismuth (Bi) doping concentrations (<i>x</i> = 0–20%) to enhance magnetic memory and electrochemical performance. X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the successful incorporation of Bi³⁺ ions, while FE-SEM and EDX analyses revealed porous morphologies and accurate elemental compositions. Magnetic measurements indicated a significant room-temperature magnetic memory effect, suggesting a spin-glassy behavior. Electrochemical studies via cyclic voltammetry and galvanostatic charge–discharge techniques highlighted the superior performance of the 20% Bi doped NiFe₂O₄, achieving a specific capacitance of 339.16 F/g at a 5 mV/s scan rate and an energy density of 4.37 Wh/kg at 1 A/g current density. This composition also exhibited excellent cyclic stability, retaining 90.76% of its capacity after 5000 cycles. Furthermore, practical applicability was evaluated using a two-electrode system, where the 20% Bi doped NiFe₂O₄ electrode demonstrated a specific capacitance of 68.94 F/g at 0.1 A/g, along with a maximum energy density of 1.172 Wh/kg and power density of 35 W/kg, indicating robust performance under realistic device conditions. The two-electrode results reinforce the suitability of Bi-doped NiFe₂O₄ NPs for real-world energy storage applications. These findings underscore the potential of Bi-doped NiFe₂O₄ NPs as high-performance candidates for advanced supercapacitors and magnetic memory devices, bridging energy storage and electrochemical technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3704–3724 3704–3724"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Wearable, Humidity-Resistant Triboelectric Nanogenerator Based on Hydrophobic Leather for Human Motion Monitoring and Sign Language Recognition","authors":"Rui Sun,&nbsp;Yulu Wang*,&nbsp;Xiaozhou Li,&nbsp;Yan Li,&nbsp;Kang Yang,&nbsp;Hao Li,&nbsp;Liqiang Jin*,&nbsp;Hongxia Zhu and Feifei Zhang,&nbsp;","doi":"10.1021/acsaelm.5c0033310.1021/acsaelm.5c00333","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00333https://doi.org/10.1021/acsaelm.5c00333","url":null,"abstract":"<p >Triboelectric nanogenerators (TENGs) are innovative solutions for self-powered wearable electronics and sensors. However, humidity substantially degrades their output performance. Therefore, developing fabrication techniques that maintain high output performance in humid environments, along with suitable triboelectric materials, remains a major challenge. In this context, we created a low-cost, durable, and humidity-resistant TENG (WPL-TENG) using hydrophobic leather as a tribo-positive material. The WPL-TENG maintained a stable output voltage of ∼57 V across −10 to 98 °C, with only a 2% decrease in output voltage when humidity increased from 28% to 86%. Embedded in shoes, it effectively monitors human motion, generating output voltages of 50 V for walking, 100 V for jumping, and 150 V for running. Furthermore, standardized sign language gestures representing emotions were distinctly recognized through electric waveforms recorded using a wireless signal transmission module that communicated with a mobile device in real-timely. These electric signals were instantly translated into text or audio via a prototype system, seamlessly bridging language barriers among diverse groups.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4133–4143 4133–4143"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of Coercivity in Surface Acoustic Wave Driven Ferromagnetic Resonance","authors":"Ashwin Kavilen Vythelingum,&nbsp;Timothée Tremblais,&nbsp;Doan Ba Nguyen,&nbsp;Djoudi Ourdani,&nbsp;Erwan Dandeu,&nbsp;Vincent Laude,&nbsp;Catherine Gourdon and Laura Thevenard*,&nbsp;","doi":"10.1021/acsaelm.5c0025010.1021/acsaelm.5c00250","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00250https://doi.org/10.1021/acsaelm.5c00250","url":null,"abstract":"<p >We report the observation of surface acoustic wave (SAW)-driven ferromagnetic resonance (FMR) on polycrystalline FeRh in its ferromagnetic phase. A strong hysteresis of the magnetic fields at resonance is observed and is found to correlate with the static coercivity of the sample, as confirmed by temperature-dependent measurements. The angular dependence of SAW-FMR is furthermore measured and found to exhibit a wide variety of shapes that differ from commonly observed resonance curves. By modeling the hysteresis of the sample using a simple macrospin approach, we show that the observed features result from the softening of the magnetic eigenfrequency and of the magnetoelastic field allowed by hysteresis. This observation opens up the possibility of coupling resonantly SAWs to magnetization dynamics for both low magnetic fields and low frequencies, which is normally possible only for samples presenting magnetic anisotropy. Long considered a problem to be reckoned with, hysteresis may now instead offer an appealing alternative for on-chip integration of magnetic SAW sensors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4055–4064 4055–4064"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures","authors":"Chen-Yu Hu,&nbsp;Ming-Yuan Song,&nbsp;Xinyu Bao and Chi-Feng Pai*,&nbsp;","doi":"10.1021/acsaelm.5c0011610.1021/acsaelm.5c00116","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00116https://doi.org/10.1021/acsaelm.5c00116","url":null,"abstract":"<p >A highly efficient spin–orbit torque (SOT) switching mechanism is crucial for the realization of practical SOT magnetic random-access memory (MRAM). This study proposes a Cr/W-based spin current source (SCS) that harvests the sizable orbital current from resistive Cr and results in an additional SOT through the orbital-to-spin conversion via the adjacent thin W layer. The optimal damping-like SOT efficiency can be up to −0.30 for the Cr/W heterostructure and −0.32 for the Cr/W multilayer, both of which outperform the traditional resistive W with a baseline SOT efficiency of −0.23. Additionally, the resistivity dependence of the apparent spin–orbital Hall conductivity reveals that using highly resistive Cr (&gt;400 μΩ·cm) is the key to generating efficient orbital currents. In the cases of Cr/W heterostructure and Cr/W multilayer structures, the largely improved efficiencies also contribute to an ultralow current magnetization switching with zero-thermal current density of 1.88 and 1.54 MA/cm², expanding the utility of W-based SOT devices in high-efficiency and low-power memory applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4279–4286 4279–4286"},"PeriodicalIF":4.3,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}