ACS Applied Electronic Materials最新文献

{"title":"Brief Report: Increasing Intraverbal Responses to Subcategorical Questions via Tact and Match-to-Sample Instruction.","authors":"Gabrielle T Lee, Xiaoyi Hu, Chun Shen","doi":"10.1007/s10803-022-05827-1","DOIUrl":"10.1007/s10803-022-05827-1","url":null,"abstract":"<p><p>The purpose of the study was to evaluate the effects of tact and match-to-sample instructions on the increase and maintenance of intraverbal responses to subcategorical questions (i.e., naming multiple items in a subcategory of a category). Three Chinese children on the autism spectrum (2 boys, 1 girl, aged 6-8 years old) participated in this study. Results indicated that intraverbal responses to subcategorical questions emerged or increased for most subcategories for all three participants following the completion of instruction without direct training.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"4740-4751"},"PeriodicalIF":3.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"40490100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"What Sir William Battle Found: Observations Beyond his Sign.","authors":"Eelco F M Wijdicks","doi":"10.1007/s12028-021-01435-6","DOIUrl":"10.1007/s12028-021-01435-6","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"1106-1109"},"PeriodicalIF":4.3,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"39925265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1530 nm Electroluminescence from Metal–Semiconductor–Metal Structured Devices Based on Oxygen–Erbium Co-doped MoS2","authors":"Lei Wang,&nbsp;Xiaohong Ji* and Qinyuan Zhang,&nbsp;","doi":"10.1021/acsaelm.4c0169910.1021/acsaelm.4c01699","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01699https://doi.org/10.1021/acsaelm.4c01699","url":null,"abstract":"<p >The 1530 nm emission of the Er intra-4f transition (⁴I_13/2 → ⁴I_15/2) is essential for telecom communication because it corresponds to the minimum-loss window of silica optical fibers. Herein, we develop a metal–semiconductor–metal structured light source based on O–Er co-doped MoS₂. The electroluminescence device exhibits the 1530 nm emission at low drive voltages (&lt;5 V), which is beneficial from the impact excitation with the space–charge-limited conduction mechanism. The characteristic of symmetric structure allows the devices to exhibit consistent electrical and electroluminescence performance at positive and negative voltages. The O doping contributes to such high-current electrical behavior, and the Er doping leads to increased trap-filled-limited voltage due to increased trap density. This work lays the foundation for developing near-infrared light sources constructed with two-dimensional materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8474–8480 8474–8480"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Induced Spin Pumping and Inverse Spin Hall Effect in Single FePt Thin Films","authors":"José Luis Ampuero*,&nbsp;Alberto Anadón,&nbsp;Héloïse Damas,&nbsp;Jaâfar Ghanbaja,&nbsp;Sébastien Petit-Watelot,&nbsp;Juan-Carlos Rojas-Sánchez*,&nbsp;Daniel Velázquez Rodriguez,&nbsp;Javier Gómez,&nbsp;Alejandro Butera* and Luis Avilés-Félix,&nbsp;","doi":"10.1021/acsaelm.4c0155510.1021/acsaelm.4c01555","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01555https://doi.org/10.1021/acsaelm.4c01555","url":null,"abstract":"<p >Self-induced spin Hall effect and self-torque hold great promise in the field of spintronics, offering a path toward highly efficient spin-to-charge interconversion, a pivotal advancement for data storage, sensing devices, or unconventional computing. In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pumping voltage signal is consistent with a typical bilayer with a positive spin Hall angle layer such as that of Pt on top of a ferromagnet (FM), substrate//FM/Pt. Structural analysis shows a composition gradient due to natural oxidation at both FePt interfaces, with the Si substrate and with the air. The FePt-thickness dependence of the self-induced charge current produced allowed us to obtain λ_FePt = (1.5 ± 0.1) nm and self-induced θ_self-FePt = 0.047 ± 0.003, with efficiency for reciprocal effects applications θ_self-FePt × λ_FePt = 0.071 nm which is comparable to that of Pt, θ_SH-Pt × λ_Pt = 0.2 nm. The spin pumping voltage is also observed in a symmetrical stacking, Al/FePt/Al with a lower overall efficiency. Moreover, by studying bilayer systems such as Si//FePt/Pt and Si//Pt//FePt we independently could extract the individual contributions of the external inverse spin Hall effect of Pt and the self-induced inverse spin Hall effect of FePt. Notably, this method gives consistent values of charge currents produced due to only self-induced inverse spin Hall effect in FePt layers. These results advance our understanding of spin-to-charge interconversion mechanisms in composite thin films and pave the way for the development of next-generation spintronics devices based on self-torque.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8298–8308 8298–8308"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient Synergy of Sea Urchin-like Graded Structure Supercapacitor Electrodes by Modulating the Morphology of Layered Double Hydroxide Composites","authors":"Yuanting Wu*,&nbsp;Xuhua Liu,&nbsp;Jinrong Wang,&nbsp;Bocheng Zhang,&nbsp;Hulin Liu and Yunlong Xue,&nbsp;","doi":"10.1021/acsaelm.4c0148910.1021/acsaelm.4c01489","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01489https://doi.org/10.1021/acsaelm.4c01489","url":null,"abstract":"<p >Rational design of the multidimensional structure of self-supporting composite electrode materials is an effective way to maintain the structural stability of supercapacitors and the efficient energy storage performance of ion and electron transport. Here, layered double hydroxide (LDH) composite electrodes (CoMn LDH@CoNi LDH/NF, CM@CN LDH) with graded structure and unique sea urchin-like distribution are prepared on nickel foam (NF) by the solvothermal method. The synergistic effect of the dual-LDH leads to increased layer spacing and provides more electrochemically accessible surfaces together with short and effective ion transport paths, which helps to accommodate a large number of active sites to achieve a rapid Faraday oxidation–reduction reaction. The results show that the CM@CN LDH-S1 in the three-electrode system exhibits an excellent specific capacitance of 2381.3 F·g^–1 at a current density of 1 A·g^–1. The assembled asymmetric supercapacitor device has a high specific capacitance of 240.8 F·g^–1 at 1 A·g^–1, a high energy density of 75.3 Wh·kg^–1, and an excellent cycling performance (85.2% initial retention after more than 5000 cycles at 5 A·g^–1), indicating that the graded nanostructure dual-LDH material has excellent application potential.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8150–8162 8150–8162"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Power Capacity Mechanical RF Switch Using Liquid Metals as Wetted Contacts","authors":"Chunwei Li,&nbsp;Mengwen Qiao,&nbsp;Jun Su,&nbsp;Qianyu Wang,&nbsp;Huimin Zhang,&nbsp;Lei Wang* and Zhongshan Deng*,&nbsp;","doi":"10.1021/acsaelm.4c0174810.1021/acsaelm.4c01748","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01748https://doi.org/10.1021/acsaelm.4c01748","url":null,"abstract":"<p >Radio frequency (RF) switches used in reconfigurable antennas often face reliability issues such as low isolation, high insertion loss, and limited power handling capability. To address these issues, this study presents a mechanical RF switch with high power capability that uses liquid metals as wetted contacts. It utilizes the rotation of a DC motor, together with a gear-rack meshing drive, to push the movable contact electrode to achieve contact or disconnection with the fixed electrode contacts wetted by eutectic gallium–indium alloy, thus realizing the on/off action of this RF switch. The electrode contacts are made of tin-plated copper, experimentally verified to have good wetting characteristics and low contact resistance with gallium-based liquid metals. For RF performance, small-signal measurements show that the RF switch has a return loss of less than −10 dB, an insertion loss of less than 3.5 dB, and an isolation of more than 13 dB from 0 to 5 GHz, while large-signal measurements suggest that it can handle a maximum power of 45.1 dBm in the 0–3 GHz band. This study also confirms the good performance of the designed RF switch for frequency reconfiguration of microstrip antennas.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8513–8524 8513–8524"},"PeriodicalIF":4.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate-Controlled InSe/PtS2 van der Waals Heterostructures for High-Performance Electronic and Optoelectronic Devices","authors":"Muhammad Wajid Zulfiqar,&nbsp;Sobia Nisar,&nbsp;Ghulam Dastgeer*,&nbsp;Faisal Ghafoor,&nbsp;Muhammad Rabeel,&nbsp;Vijay D. Chavan,&nbsp;Ali Alsalme,&nbsp;Muhammad Zahir Iqbal,&nbsp;Iqra Rabani and Deok-kee Kim*,&nbsp;","doi":"10.1021/acsaelm.4c0126410.1021/acsaelm.4c01264","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01264https://doi.org/10.1021/acsaelm.4c01264","url":null,"abstract":"<p >The unique combination of atomically thin layers and well-defined interfaces in two-dimensional (2D) semiconductors holds promise for applications in electronics and optoelectronics. As promising newcomers, p-type InSe and n-type PtS₂ nanosheets present exciting possibilities, with their unique characteristics. Here, we investigate gate-controlled InSe/PtS₂ van der Waals heterostructures (vdWHs), highlighting their potential as candidates for advanced electronic and optoelectronic applications. This work demonstrates the realization of a 2D p-n diode with a precisely defined atomic interface, exhibiting strong interlayer interactions. InSe/PtS₂ vdWHs demonstrate impressive functionalities surpassing previously reported van der Waals counterparts with gate-dependent rectification of 1.5 × 10⁵ at a gate voltage of <i>V</i>_g = −20 V and ideality factor of 1.17, close to an ideal diode. Investigating the photovoltaic response of the InSe/PtS₂ heterostructure under varied light intensities revealed a significant responsivity that varies from 31.85 to 43.2 A/W upon exposure to a light wavelength of 220 nm. Additionally, a substantial external quantum efficiency (EQE) ratio of ∼2.4 × 10⁴ % with high detectivity (<i>D</i>*) of 7.06 × 10⁹ Jones values is achieved. This work demonstrates the development of advanced p-n junctions, paving the way for the realization of high-performance electronics and optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"7906–7914 7906–7914"},"PeriodicalIF":4.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-Flight Microwave Impedance Microscopy","authors":"Jia Yu,&nbsp;Yuchen Zhou,&nbsp;Xiao Wang,&nbsp;Xuejian Ma,&nbsp;Ananth Dodabalapur* and Keji Lai*,&nbsp;","doi":"10.1021/acsaelm.4c0165210.1021/acsaelm.4c01652","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01652https://doi.org/10.1021/acsaelm.4c01652","url":null,"abstract":"<p >The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information on the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2–3 cm²/(V s), consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical time scale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8448–8454 8448–8454"},"PeriodicalIF":4.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process","authors":"Yinchi Liu,&nbsp;Jining Yang,&nbsp;Hao Zhang,&nbsp;Dmitriy Anatolyevich Golosov,&nbsp;Chenjie Gu,&nbsp;Xiaohan Wu,&nbsp;Hongliang Lu,&nbsp;Lin Chen,&nbsp;Shijin Ding and Wenjun Liu*,&nbsp;","doi":"10.1021/acsaelm.4c0174510.1021/acsaelm.4c01745","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01745https://doi.org/10.1021/acsaelm.4c01745","url":null,"abstract":"<p >In this work, the back-end of line (BEOL) compatible sub-6 nm Hf_0.5Zr_0.5O₂/ZrO₂/Hf_0.5Zr_0.5O₂ (HZO/ZrO₂/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO₂/HZO stack annealed at 400 °C shows a superior remanent polarization (2<i>P</i>_r) of 26.3 μC/cm² under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO₂ insertion. Moreover, the capacitor with a HZO/ZrO₂/HZO stack also achieved an excellent endurance with a 2<i>P</i>_r of 27.1 μC/cm² after 10¹¹ cycles without breakdown and only ∼12% 2<i>P</i>_r degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO₂/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8507–8512 8507–8512"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Crystalline Quality Ta-Doped h-ZnTiO3 Epitaxial Films: Characteristics and Application in UV Detectors","authors":"Biao Zhang,&nbsp;Xiaochen Ma*,&nbsp;HongYan Zhu,&nbsp;Hongdi Xiao,&nbsp;Jin Ma and Caina Luan*,&nbsp;","doi":"10.1021/acsaelm.4c0162910.1021/acsaelm.4c01629","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01629https://doi.org/10.1021/acsaelm.4c01629","url":null,"abstract":"<p >Ta-doped <i>h</i>-ZnTiO₃ (<i>h</i>-ZnTiO₃:Ta) films with an atomic ratio of 0–5% are grown on sapphire substrates by pulsed laser deposition. The prepared films exhibit n-type semiconductor behavior with high epitaxial crystalline quality. These films have high transparency, and their optical band gaps exceed 3.72 eV. The Hall mobility and carrier concentration of the 1% Ta-doped film are 4.6 cm²/(V·s) and 4.20 × 10¹⁴ /cm³, respectively. The <i>h</i>-ZnTiO₃:Ta film-based metal–semiconductor–metal (MSM) photodetectors are fabricated, and their characteristics are analyzed in detail. Among them, 1% Ta-doped <i>h</i>-ZnTiO₃ film-based devices show the best detection performance, including responsivity of 4.23 mA/W and detectivity of 1.43 × 10¹¹ Jones, under the wavelength of 308 nm ultraviolet light with an optical density of 140 μW/cm². The detector also has an extremely fast response time (rise time: 0.16 s and fall time: 0.04 s). This work proves that <i>h</i>-ZnTiO₃:Ta epitaxial films have great application prospects in future optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8413–8423 8413–8423"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}