ACS Applied Electronic Materials最新文献

Research on Rare Earth-Doped Zn1.8SiO3.8 Microwave Dielectric Ceramics and Their Applications in Filters 稀土掺杂Zn1.8SiO3.8微波介质陶瓷及其在滤波器中的应用研究

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-14 DOI: 10.1021/acsaelm.5c0003210.1021/acsaelm.5c00032

Ting Jiang, Zhihao Wang, Zhuoheng Yu and Wei Wen*,

{"title":"Research on Rare Earth-Doped Zn1.8SiO3.8 Microwave Dielectric Ceramics and Their Applications in Filters","authors":"Ting Jiang, Zhihao Wang, Zhuoheng Yu and Wei Wen*, ","doi":"10.1021/acsaelm.5c0003210.1021/acsaelm.5c00032","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00032https://doi.org/10.1021/acsaelm.5c00032","url":null,"abstract":"Willemite is a low dielectric constant ceramic that is well suited for millimeter-wave applications. This study explores the improvement of the dielectric properties of Zn1.8SiO3.8 ceramics by doping with Nd2O3 at molar fractions of 2%, 4%, 6%, and 8%, with the goal of enhancing their application in microwave filters. The phase structure, morphology, and vibrational modes of the samples were analyzed by using XRD, SEM, Raman, and IR spectroscopy. Additionally, their dielectric constants, quality factors, and temperature coefficients were measured. The results indicate that the ceramic sample doped with 6 mol % Nd2O3 and sintered at 1225 °C maintains a stable dielectric constant and achieves a high Q × f value of approximately 130,000 GHz, exhibiting significantly enhanced dielectric properties compared to pure Zn1.8SiO3.8 ceramics. Based on the optimized Zn1.8SiO3.8 −6 mol % Nd2O3 ceramic system, a band-pass filter with a center frequency of 5.15 GHz and a bandwidth of 200 MHz was designed and fabricated. Experimental results demonstrate that the filter exhibits a low insertion loss of −0.62 dB and a return loss exceeding −20 dB, highlighting its strong potential for 5G communication applications. This study demonstrates the effectiveness of rare earth doping in optimizing the performance of microwave dielectric materials and provides new ideas for the design of high-performance dielectric filters.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3333–3342 3333–3342"},"PeriodicalIF":4.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spintronic Logic Devices Based on Skyrmioniums and Magnetic Defects 基于skyrmionium和磁性缺陷的自旋电子逻辑器件

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-12 DOI: 10.1021/acsaelm.5c0013710.1021/acsaelm.5c00137

Sebastian Rodrigo Navarro Vilca, Silvana Rocio Urcia Romero and Helmunt Eduardo Vigo Cotrina*,

引用次数: 0

Low-Power Optoelectronic NO2 Sensors by Constructing ZnS/SnS2 Heterojunctions 构建ZnS/SnS2异质结的低功率光电NO2传感器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-12 DOI: 10.1021/acsaelm.5c0028510.1021/acsaelm.5c00285

Jiangbin Guo, Chenyu Wang, Xiao Chang, Wei Zheng, Jun Zhang and Xianghong Liu*,

{"title":"Low-Power Optoelectronic NO2 Sensors by Constructing ZnS/SnS2 Heterojunctions","authors":"Jiangbin Guo, Chenyu Wang, Xiao Chang, Wei Zheng, Jun Zhang and Xianghong Liu*, ","doi":"10.1021/acsaelm.5c0028510.1021/acsaelm.5c00285","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00285https://doi.org/10.1021/acsaelm.5c00285","url":null,"abstract":"The realization of gas sensing at room temperature with zero power consumption has been challenging for semiconductor gas sensors. In this work, an optoelectronic gas sensor based on ZnS/SnS2 heterojunction materials synthesized by the hydrothermal method is reported, and its response to NO2 gas at room temperature (25 °C) is systematically studied. The results show that the ZnS/SnS2 heterojunction facilitates effective charge transfer, increases surface adsorption sites, and significantly enhances the sensing performance, especially when the ratio of ZnS to SnS2 is 1:1, and the response value to 10 ppm of NO2 under ultraviolet irradiation is as high as 160, showing excellent sensitivity. The improved performance is primarily attributed to optimized surface properties and accelerated electron transfer at the heterojunction interface, which collectively enhance the NO2 adsorption and desorption processes. Our results demonstrate that, by adjusting the composition of heterojunction materials, their gas-sensing properties can be effectively tuned, providing a promising strategy for the development of high-performance gas sensors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3552–3560 3552–3560"},"PeriodicalIF":4.3,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transition Metal-Doped 2D GaN as Single-Atom Electrocatalysts for Lithium–Sulfur Batteries: Insights from First-Principles Calculations 过渡金属掺杂二维GaN作为锂硫电池的单原子电催化剂：来自第一性原理计算的见解

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-11 DOI: 10.1021/acsaelm.5c0026610.1021/acsaelm.5c00266

Keat Hoe Yeoh*, Yee Hui Robin Chang*, Khian-Hooi Chew, Duu Sheng Ong, Chang Fu Dee, Tiem Leong Yoon, Edward Yi Chang and Hung-Wei Yu,

{"title":"Transition Metal-Doped 2D GaN as Single-Atom Electrocatalysts for Lithium–Sulfur Batteries: Insights from First-Principles Calculations","authors":"Keat Hoe Yeoh*, Yee Hui Robin Chang*, Khian-Hooi Chew, Duu Sheng Ong, Chang Fu Dee, Tiem Leong Yoon, Edward Yi Chang and Hung-Wei Yu, ","doi":"10.1021/acsaelm.5c0026610.1021/acsaelm.5c00266","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00266https://doi.org/10.1021/acsaelm.5c00266","url":null,"abstract":"The commercial adoption of lithium–sulfur (Li–S) batteries is primarily limited by the shuttle effect and slow kinetics of the sulfur reduction reaction (SRR), which involves a complex 16-electron conversion process. Single-atom catalysts (SACs) show great potential as electrocatalysts to improve reaction kinetics in Li–S batteries. Using first-principles methods, we conducted computational screening of a series of transition metal (TM) atoms doped into two-dimensional (2D) GaN to enhance the SRR activity. Our results indicate that the important SRR step which involves liquid–solid transformation of Li2S4 into Li2S is correlated linearly with the SRR overpotential via 2.7ΔGLi2S* – ΔGLi2S4*. Based on the volcano plot, two catalysts, namely Pd@GaN and Cu@GaN, are identified as the most effective electrocatalysts, with an overpotential of 0.43 V. These doped atoms remain stable on the 2D GaN even at high temperatures. In addition, both Pd@GaN and Cu@GaN exhibit strong binding energies for high order Li2Sn (n = 4, 6, 8), ranging from −1.81 to −2.99 eV, effectively mitigating the shuttle effect. This study offers theoretical insights into the SRR mechanism on TM-doped 2D GaN and guides the rational design of single-atom catalysts (SACs) for Li–S batteries.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3521–3528 3521–3528"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Micrometer-Scale Cs3Cu2I5 Thick Film Directly Grown on n-Si to Construct Planar Heterojunction for UV Detection 在n-Si上直接生长的微米级Cs3Cu2I5厚膜构建平面异质结用于紫外检测

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-11 DOI: 10.1021/acsaelm.5c0039410.1021/acsaelm.5c00394

Li Xiao*, Xiuxian Li, Zhukang Zhang, Yue Long, Gang Wang and Hengxiang Gong,

{"title":"Micrometer-Scale Cs3Cu2I5 Thick Film Directly Grown on n-Si to Construct Planar Heterojunction for UV Detection","authors":"Li Xiao*, Xiuxian Li, Zhukang Zhang, Yue Long, Gang Wang and Hengxiang Gong, ","doi":"10.1021/acsaelm.5c0039410.1021/acsaelm.5c00394","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00394https://doi.org/10.1021/acsaelm.5c00394","url":null,"abstract":"Integrating wide band gap semiconductor materials with silicon (Si) to create heterojunctions is an effective strategy for enhancing the ultraviolet (UV) sensitivity of optoelectronic devices. However, epitaxially growing high-quality wide band gap films on Si substrates at low temperatures without compromising the properties of Si remains challenging. In this study, we introduce a low-cost mist chemical vapor deposition (CVD) technique to deposit Cs3Cu2I5 perovskite films and fabricate a simple-structured Cs3Cu2I5/n-Si planar heterojunction. This technique enables an orderly deposition and rapid crystallization process, distinct from traditional solution-based methods. Herein, we report for the first time a compact, thick Cs3Cu2I5 film with an average grain size of 5.27 μm and a thickness of approximately 2.8 μm exhibiting orientated growth along the (303) plane. Furthermore, the simply constructed Cs3Cu2I5/n-Si photodiode exhibited a maximum photoresponsivity of 186 mA W–1 and a specific detectivity of 2.5 × 1012 Jones under 278 nm illumination. The on–off cycling tests demonstrated excellent operational stability, with unpackaged devices retaining 90% of their initial photocurrent after two months of storage under ambient conditions.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3582–3589 3582–3589"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoscale Ion Diffusion and Electric Charging–Discharging in Oriented Textured LiCoO2 Thin Films 定向织构LiCoO2薄膜纳米级离子扩散与充放电

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-11 DOI: 10.1021/acsaelm.5c0028810.1021/acsaelm.5c00288

Liang Yang, Wenxuan Wang, Lei Wang, Haoze Zhang, Dawei Zhang*, Neeraj Sharma* and Jan Seidel*,

{"title":"Nanoscale Ion Diffusion and Electric Charging–Discharging in Oriented Textured LiCoO2 Thin Films","authors":"Liang Yang, Wenxuan Wang, Lei Wang, Haoze Zhang, Dawei Zhang*, Neeraj Sharma* and Jan Seidel*, ","doi":"10.1021/acsaelm.5c0028810.1021/acsaelm.5c00288","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00288https://doi.org/10.1021/acsaelm.5c00288","url":null,"abstract":"LiCoO2 (LCO) is the first commercialized and still a widely used cathode material for lithium-ion batteries found in a range of modern applications. Even with decades of research, there is a lack of understanding of the nanoscale function and characteristics of LCO and other state-of-the-art cathode materials in lithium-ion batteries. This in turn limits opportunities to enhance battery performance. A key challenge in understanding and developing better electrode materials in lithium-ion batteries is the surface, in particular the evolution of the surface during use. The difficulty is compounded by the combination of limited analytical techniques that can probe the surface and their inherent condition requirements and the variability on the electrode surface depending on electrode processing steps used. Here, Li ion transport behavior in LCO thin films with differently oriented grains is studied by employing Kelvin probe force microscopy (KPFM), conductive atomic force microscopy (c-AFM), and sequential excitation electrochemical strain microscopy (SE-ESM) to study the conductance and surface potential of LCO that are closely related to the local Li ion movement. Varying electric polarities lead to distinct relaxation times due to the attraction or repulsion between Li ions and injected charges, which are experimentally visualized. Notably, a localized charge–discharge behavior can be simulated when conducting c-AFM measurements, which illustrates the impact of these processes on the surface morphology. This study offers insight into the nanoscale surface-focused properties, which can now be tuned by changing the microstructure, and this may lead to improved lithium-ion battery performance.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3536–3542 3536–3542"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the Switching Mechanism in the Bipolar and Complementary Resistive Switching of HfOx-Based Resistive Random-Access Memory through Rapid-Thermal-Annealing-Induced Grain Boundary Engineering 基于快速热退火晶界工程的hfox基阻性随机存取存储器双极和互补阻性开关机制研究

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-11 DOI: 10.1021/acsaelm.5c0034410.1021/acsaelm.5c00344

Gwon Kim, Juho Sung, Sanghyun Kang, Jaehyuk Lim and Changhwan Shin*,

{"title":"Investigation of the Switching Mechanism in the Bipolar and Complementary Resistive Switching of HfOx-Based Resistive Random-Access Memory through Rapid-Thermal-Annealing-Induced Grain Boundary Engineering","authors":"Gwon Kim, Juho Sung, Sanghyun Kang, Jaehyuk Lim and Changhwan Shin*, ","doi":"10.1021/acsaelm.5c0034410.1021/acsaelm.5c00344","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00344https://doi.org/10.1021/acsaelm.5c00344","url":null,"abstract":"The resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile memory systems owing to its simple structure and low power consumption. In this study, the oxygen-vacancy-based filaments in HfOx-based RRAM were controlled using rapid thermal annealing (RTA) to achieve thin, defined filaments through grain boundary engineering. With increasing RTA temperature, the grain size of the HfOx layer increased, and the grains merged with other grains to form simplified grain boundaries, along with oxygen vacancies, facilitating the formation of thin filaments. To investigate the formation of conductive filaments within the RRAM devices, a bilayer structure composed of annealed and unannealed HfOx layers was fabricated. When the RTA temperature was raised from 300 to 500 °C, the RRAM exhibited typical bipolar resistive switching (BRS) characteristics. Conversely, when the RTA temperature was increased to 600 °C, differences in the process of filament formation from the bottom and top of the HfOx layer led to the emergence of complementary resistive switching (CRS) characteristics. CRS has superior potential for memory applications compared with BRS owing to the ability of the former to suppress the sneak-path issue. Notably, CRS characteristics were developed in layers deposited on the same materials and equipment rather than through a bilayer of different materials or by the addition of a metal layer in the middle. The present results suggest that filaments formed through RTA-induced grain boundary engineering have potential advantages over those from the conventional RRAM.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3561–3570 3561–3570"},"PeriodicalIF":4.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy Sb和Bi掺杂对分子束外延生长SnTe层的影响

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-10 DOI: 10.1021/acsaelm.5c0029910.1021/acsaelm.5c00299

Qihua Zhang*, Mary Kathleen Caucci, Maria Hilse, Analaura Diaz Gomez, Susan Sinnott and Stephanie Law*,

{"title":"Effects of Sb and Bi Doping in SnTe Layers Grown by Molecular Beam Epitaxy","authors":"Qihua Zhang*, Mary Kathleen Caucci, Maria Hilse, Analaura Diaz Gomez, Susan Sinnott and Stephanie Law*, ","doi":"10.1021/acsaelm.5c0029910.1021/acsaelm.5c00299","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00299https://doi.org/10.1021/acsaelm.5c00299","url":null,"abstract":"SnTe is an interesting narrow-band-gap semiconductor due to its good thermoelectric performance, near-room-temperature phase transition and ferroelectricity, and topologically nontrivial band structure. Yet, the negative formation energy of Sn vacancies results in SnTe thin films always being heavily p-type, which limits their potential in thermoelectric and spintronic applications. While attempts have been made to develop n-type SnTe bulk crystals, these efforts have not extended to thin films. In this work, we report on the effect of incorporating Sb and Bi dopants in SnTe thin films by molecular beam epitaxy. We found that Sb is an unsuitable electron dopant and has a detrimental effect on the SnTe surface morphology. However, by incorporating Bi into SnTe films, a 2.5× reduction in free hole concentrations is observed and a smooth surface is retained. Unfortunately, high Bi fluxes lead to the formation of twin defects. Using first-principles calculations with density functional theory, we show that the preferred substitutional site of the Sb and Bi dopants depends on the growth conditions: positively charged SbSn+ impurity is only found in heavily Sn-poor conditions, while BiSn+ is favored in all but the Sn-rich growth conditions. Moreover, for both Sb and Bi dopants, the substitutional sites may form complexes, with Sn vacancies acting as shallow acceptors, which would be a significant factor limiting the reduction of free hole concentrations. Although the films remain p-type, this work is the first step toward developing n-type SnTe thin films.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3543–3551 3543–3551"},"PeriodicalIF":4.3,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Silver/Polyaniline Schottky Diodes on a Polyethylene Based Elastomer: A Sustainable Approach for Advanced Electronics 基于聚乙烯弹性体的柔性银/聚苯胺肖特基二极管：先进电子学的可持续发展途径

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-10 DOI: 10.1021/acsaelm.4c0231810.1021/acsaelm.4c02318

Raj K. Vinnakota*, Shaimum Shahriar, Arun Ghosh and David Summerlin,

{"title":"Flexible Silver/Polyaniline Schottky Diodes on a Polyethylene Based Elastomer: A Sustainable Approach for Advanced Electronics","authors":"Raj K. Vinnakota*, Shaimum Shahriar, Arun Ghosh and David Summerlin, ","doi":"10.1021/acsaelm.4c0231810.1021/acsaelm.4c02318","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02318https://doi.org/10.1021/acsaelm.4c02318","url":null,"abstract":"This study presents the fabrication and characterization of flexible Schottky diodes based on silver (Ag) and polyaniline (PAni) layers, constructed on a recyclable poly(ethylene-co-methyl acrylate-co-glycidyl methacrylate) terpolymer (PE-MA-GM) substrate. The fabrication process involved compression molding of the PE-MA-GM resin substrate and patterning of PAni layers using aluminum masks, followed by the deposition of Ag electrodes. Electrical characterization revealed stable current–voltage (I–V) characteristics at room temperature and under varying operating temperatures. Furthermore, the devices exhibited decent performance under mechanical bending at angles of 40°, and 60°, demonstrating robustness against mechanical stress. Additionally, we recycled entire devices and reconstructed Ag/PAni on the recycled substrate, achieving I–V characteristics comparable to the original measurements. While the fabrication methods used in this study were nonstandard, our preliminary findings underscore the potential of Ag/PAni Schottky diodes integrated onto a flexible and recyclable PE-MA-GM substrate. The results demonstrate promising performance metrics, with stable electrical behavior across varying operating conditions. This work offers an alternative approach to advancing the development of flexible and sustainable electronic systems. It paves the way for future studies focused on optimizing device performance, improving scalability, and expanding applications in wearable and environmentally conscious technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3285–3296 3285–3296"},"PeriodicalIF":4.3,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02318","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Definition Area-Specific Printing of Patterned Conductive Sub-μm Features for Large-Area Electronics Manufacturing 用于大面积电子制造的亚微米级图案化导电特征的高清晰度特定区域印刷

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-10 DOI: 10.1021/acsaelm.5c0027810.1021/acsaelm.5c00278

Boxin Zhang, Lakshmi Prakasan and Harish Subbaraman*,

{"title":"High-Definition Area-Specific Printing of Patterned Conductive Sub-μm Features for Large-Area Electronics Manufacturing","authors":"Boxin Zhang, Lakshmi Prakasan and Harish Subbaraman*, ","doi":"10.1021/acsaelm.5c0027810.1021/acsaelm.5c00278","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00278https://doi.org/10.1021/acsaelm.5c00278","url":null,"abstract":"Additive manufacturing has experienced rapid growth and has become widely used in materials development and process technologies. In particular, the rapid expansion of electronics manufacturing for low-cost electronics drives the need for cost-effective material deposition and processing techniques that can be integrated within existing fabrication processes. In this study, we achieved 500 nm patterns using a single-step, high-definition deposition technique, which includes photolithography/e-beam lithography, plasma-jet printing, and lift-off procedures. We also demonstrated the versatility of this method on both rigid and flexible substrates by fabricating patterns on silicon and Kapton. Finally, we showcased two key applications: the development of high-precision alignment markers for subsequent lithography processes and the deposition of multiple materials within a single-step process. The promising results demonstrate its potential as a viable alternative to traditional semiconductor manufacturing processes.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 8","pages":"3529–3535 3529–3535"},"PeriodicalIF":4.3,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143854273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0