ACS Applied Electronic Materials最新文献

{"title":"Efficient Synergy of Sea Urchin-like Graded Structure Supercapacitor Electrodes by Modulating the Morphology of Layered Double Hydroxide Composites","authors":"Yuanting Wu*,&nbsp;Xuhua Liu,&nbsp;Jinrong Wang,&nbsp;Bocheng Zhang,&nbsp;Hulin Liu and Yunlong Xue,&nbsp;","doi":"10.1021/acsaelm.4c0148910.1021/acsaelm.4c01489","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01489https://doi.org/10.1021/acsaelm.4c01489","url":null,"abstract":"<p >Rational design of the multidimensional structure of self-supporting composite electrode materials is an effective way to maintain the structural stability of supercapacitors and the efficient energy storage performance of ion and electron transport. Here, layered double hydroxide (LDH) composite electrodes (CoMn LDH@CoNi LDH/NF, CM@CN LDH) with graded structure and unique sea urchin-like distribution are prepared on nickel foam (NF) by the solvothermal method. The synergistic effect of the dual-LDH leads to increased layer spacing and provides more electrochemically accessible surfaces together with short and effective ion transport paths, which helps to accommodate a large number of active sites to achieve a rapid Faraday oxidation–reduction reaction. The results show that the CM@CN LDH-S1 in the three-electrode system exhibits an excellent specific capacitance of 2381.3 F·g^–1 at a current density of 1 A·g^–1. The assembled asymmetric supercapacitor device has a high specific capacitance of 240.8 F·g^–1 at 1 A·g^–1, a high energy density of 75.3 Wh·kg^–1, and an excellent cycling performance (85.2% initial retention after more than 5000 cycles at 5 A·g^–1), indicating that the graded nanostructure dual-LDH material has excellent application potential.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8150–8162 8150–8162"},"PeriodicalIF":4.3,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Power Capacity Mechanical RF Switch Using Liquid Metals as Wetted Contacts","authors":"Chunwei Li,&nbsp;Mengwen Qiao,&nbsp;Jun Su,&nbsp;Qianyu Wang,&nbsp;Huimin Zhang,&nbsp;Lei Wang* and Zhongshan Deng*,&nbsp;","doi":"10.1021/acsaelm.4c0174810.1021/acsaelm.4c01748","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01748https://doi.org/10.1021/acsaelm.4c01748","url":null,"abstract":"<p >Radio frequency (RF) switches used in reconfigurable antennas often face reliability issues such as low isolation, high insertion loss, and limited power handling capability. To address these issues, this study presents a mechanical RF switch with high power capability that uses liquid metals as wetted contacts. It utilizes the rotation of a DC motor, together with a gear-rack meshing drive, to push the movable contact electrode to achieve contact or disconnection with the fixed electrode contacts wetted by eutectic gallium–indium alloy, thus realizing the on/off action of this RF switch. The electrode contacts are made of tin-plated copper, experimentally verified to have good wetting characteristics and low contact resistance with gallium-based liquid metals. For RF performance, small-signal measurements show that the RF switch has a return loss of less than −10 dB, an insertion loss of less than 3.5 dB, and an isolation of more than 13 dB from 0 to 5 GHz, while large-signal measurements suggest that it can handle a maximum power of 45.1 dBm in the 0–3 GHz band. This study also confirms the good performance of the designed RF switch for frequency reconfiguration of microstrip antennas.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8513–8524 8513–8524"},"PeriodicalIF":4.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate-Controlled InSe/PtS2 van der Waals Heterostructures for High-Performance Electronic and Optoelectronic Devices","authors":"Muhammad Wajid Zulfiqar,&nbsp;Sobia Nisar,&nbsp;Ghulam Dastgeer*,&nbsp;Faisal Ghafoor,&nbsp;Muhammad Rabeel,&nbsp;Vijay D. Chavan,&nbsp;Ali Alsalme,&nbsp;Muhammad Zahir Iqbal,&nbsp;Iqra Rabani and Deok-kee Kim*,&nbsp;","doi":"10.1021/acsaelm.4c0126410.1021/acsaelm.4c01264","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01264https://doi.org/10.1021/acsaelm.4c01264","url":null,"abstract":"<p >The unique combination of atomically thin layers and well-defined interfaces in two-dimensional (2D) semiconductors holds promise for applications in electronics and optoelectronics. As promising newcomers, p-type InSe and n-type PtS₂ nanosheets present exciting possibilities, with their unique characteristics. Here, we investigate gate-controlled InSe/PtS₂ van der Waals heterostructures (vdWHs), highlighting their potential as candidates for advanced electronic and optoelectronic applications. This work demonstrates the realization of a 2D p-n diode with a precisely defined atomic interface, exhibiting strong interlayer interactions. InSe/PtS₂ vdWHs demonstrate impressive functionalities surpassing previously reported van der Waals counterparts with gate-dependent rectification of 1.5 × 10⁵ at a gate voltage of <i>V</i>_g = −20 V and ideality factor of 1.17, close to an ideal diode. Investigating the photovoltaic response of the InSe/PtS₂ heterostructure under varied light intensities revealed a significant responsivity that varies from 31.85 to 43.2 A/W upon exposure to a light wavelength of 220 nm. Additionally, a substantial external quantum efficiency (EQE) ratio of ∼2.4 × 10⁴ % with high detectivity (<i>D</i>*) of 7.06 × 10⁹ Jones values is achieved. This work demonstrates the development of advanced p-n junctions, paving the way for the realization of high-performance electronics and optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"7906–7914 7906–7914"},"PeriodicalIF":4.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-Flight Microwave Impedance Microscopy","authors":"Jia Yu,&nbsp;Yuchen Zhou,&nbsp;Xiao Wang,&nbsp;Xuejian Ma,&nbsp;Ananth Dodabalapur* and Keji Lai*,&nbsp;","doi":"10.1021/acsaelm.4c0165210.1021/acsaelm.4c01652","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01652https://doi.org/10.1021/acsaelm.4c01652","url":null,"abstract":"<p >The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve steady-state or transient measurements on field-effect transistors. Here, we employed microwave impedance microscopy to carry out position-dependent time-of-flight (TOF) experiments on a-IGZO devices, which offer spatial and temporal information on the underlying transport dynamics. The drift mobility calculated from the delay time between carrier injection and onset of TOF response is 2–3 cm²/(V s), consistent with the field-effect mobility from device measurements. The spatiotemporal conductivity data can be nicely fitted to a two-step function, corresponding to two coexisting mechanisms with a typical time scale of milliseconds. The competition between multiple-trap-and-release conduction through band-tail states and hopping conduction through deep trap states is evident from the fitting parameters. The underlying length scale and time scale of charge dynamics in a-IGZO are of fundamental importance for transparent and flexible nanoelectronics and optoelectronics, as well as emerging back-end-of-line applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8448–8454 8448–8454"},"PeriodicalIF":4.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Process","authors":"Yinchi Liu,&nbsp;Jining Yang,&nbsp;Hao Zhang,&nbsp;Dmitriy Anatolyevich Golosov,&nbsp;Chenjie Gu,&nbsp;Xiaohan Wu,&nbsp;Hongliang Lu,&nbsp;Lin Chen,&nbsp;Shijin Ding and Wenjun Liu*,&nbsp;","doi":"10.1021/acsaelm.4c0174510.1021/acsaelm.4c01745","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01745https://doi.org/10.1021/acsaelm.4c01745","url":null,"abstract":"<p >In this work, the back-end of line (BEOL) compatible sub-6 nm Hf_0.5Zr_0.5O₂/ZrO₂/Hf_0.5Zr_0.5O₂ (HZO/ZrO₂/HZO) stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO₂/HZO stack annealed at 400 °C shows a superior remanent polarization (2<i>P</i>_r) of 26.3 μC/cm² under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO₂ insertion. Moreover, the capacitor with a HZO/ZrO₂/HZO stack also achieved an excellent endurance with a 2<i>P</i>_r of 27.1 μC/cm² after 10¹¹ cycles without breakdown and only ∼12% 2<i>P</i>_r degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO₂/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8507–8512 8507–8512"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Crystalline Quality Ta-Doped h-ZnTiO3 Epitaxial Films: Characteristics and Application in UV Detectors","authors":"Biao Zhang,&nbsp;Xiaochen Ma*,&nbsp;HongYan Zhu,&nbsp;Hongdi Xiao,&nbsp;Jin Ma and Caina Luan*,&nbsp;","doi":"10.1021/acsaelm.4c0162910.1021/acsaelm.4c01629","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01629https://doi.org/10.1021/acsaelm.4c01629","url":null,"abstract":"<p >Ta-doped <i>h</i>-ZnTiO₃ (<i>h</i>-ZnTiO₃:Ta) films with an atomic ratio of 0–5% are grown on sapphire substrates by pulsed laser deposition. The prepared films exhibit n-type semiconductor behavior with high epitaxial crystalline quality. These films have high transparency, and their optical band gaps exceed 3.72 eV. The Hall mobility and carrier concentration of the 1% Ta-doped film are 4.6 cm²/(V·s) and 4.20 × 10¹⁴ /cm³, respectively. The <i>h</i>-ZnTiO₃:Ta film-based metal–semiconductor–metal (MSM) photodetectors are fabricated, and their characteristics are analyzed in detail. Among them, 1% Ta-doped <i>h</i>-ZnTiO₃ film-based devices show the best detection performance, including responsivity of 4.23 mA/W and detectivity of 1.43 × 10¹¹ Jones, under the wavelength of 308 nm ultraviolet light with an optical density of 140 μW/cm². The detector also has an extremely fast response time (rise time: 0.16 s and fall time: 0.04 s). This work proves that <i>h</i>-ZnTiO₃:Ta epitaxial films have great application prospects in future optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8413–8423 8413–8423"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe0.9Co0.1O3 Thin Films","authors":"Pamela Machado,&nbsp;Pol Salles,&nbsp;Alexander Frebel,&nbsp;Gabriele De Luca,&nbsp;Eloi Ros,&nbsp;Christian Hagendorf,&nbsp;Ignasi Fina,&nbsp;Joaquim Puigdollers and Mariona Coll*,&nbsp;","doi":"10.1021/acsaelm.4c0153310.1021/acsaelm.4c01533","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01533https://doi.org/10.1021/acsaelm.4c01533","url":null,"abstract":"<p >Photoferroelectric BiFeO₃ (BFO) has attracted renewed interest to be integrated into thin film photovoltaic (PV) devices as a stable, lead-free, and versatile photoabsorber with simplified architecture. While significant efforts have been dedicated toward the exploration of strategies to tailor the properties of this photoabsorber to improve the device performance, efficiencies still remain low. The modification of the BFO interface by the incorporation of transport-selective layers can offer fresh opportunities to modify the properties of the device. Identifying an optical and electrically suitable selective layer while ensuring easy device processing and controlled film properties is challenging. In this work, we determine the influence of incorporating a ZnO layer on the ferroelectric and photoresponse behavior of an epitaxial BiFe_0.9Co_0.1O₃ (BFCO)-based heterostructure. The device is completed with Sn-doped In₂O₃ (ITO) and La_0.7Sr_0.3MnO₃ (LSMO) electrodes. This all-oxide system is stable under ambient conditions and displays robust ferroelectricity. The coupled ferroelectricity–photoresponse measurements demonstrate that the short circuit current can be modulated by ferroelectric polarization in up to 68% under blue monochromatic light. Also, the responsivity of the system with the ZnO-modified interface is larger than that of the system with no ZnO. Complementary band energy alignment studies reveal that the observed increase in the short circuit current density of the device with ZnO is attributed to lower Fermi level energy at the ZnO/BFCO interface compared to the ITO/BFCO interface, which reduces charge recombination. Therefore, this study provides useful insights into the role of the ZnO interface layer in stable BFO-based devices to further explore their viability for potential optoelectronic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8251–8259 8251–8259"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01533","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism and Application of Optical Modulation of Terahertz Waves in a Perovskite Heterojunction","authors":"Wen Li,&nbsp;Hengzhen Cheng,&nbsp;Caiyu Feng,&nbsp;Weiyi Zhou and Bo Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0157810.1021/acsaelm.4c01578","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01578https://doi.org/10.1021/acsaelm.4c01578","url":null,"abstract":"<p >We investigated the mechanism and application of the modulation of terahertz waves using perovskite heterostructures. At the interface between PEDOT:PSS and the perovskite layers under excitation by an external light source, photogenerated carriers transferred from the perovskite layer to the PEDOT:PSS layer, which was accompanied by charge accumulation. A large number of photogenerated carriers scattered terahertz waves, thereby modulating the terahertz signal in the sample. The process of modulation and recovery of the terahertz signal by a perovskite material under external light is analogous to the principle of biological synapses, which are involved in memory and learning in animal brains. This enabled us to develop perovskite-based synaptic devices. The memory properties of perovskite heterojunction materials open up applications of terahertz technology.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8351–8359 8351–8359"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe_0.9Co_0.1O₃ Thin Films.","authors":"Pamela Machado, Pol Salles, Alexander Frebel, Gabriele De Luca, Eloi Ros, Christian Hagendorf, Ignasi Fina, Joaquim Puigdollers, Mariona Coll","doi":"10.1021/acsaelm.4c01533","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01533","url":null,"abstract":"<p><p>Photoferroelectric BiFeO₃ (BFO) has attracted renewed interest to be integrated into thin film photovoltaic (PV) devices as a stable, lead-free, and versatile photoabsorber with simplified architecture. While significant efforts have been dedicated toward the exploration of strategies to tailor the properties of this photoabsorber to improve the device performance, efficiencies still remain low. The modification of the BFO interface by the incorporation of transport-selective layers can offer fresh opportunities to modify the properties of the device. Identifying an optical and electrically suitable selective layer while ensuring easy device processing and controlled film properties is challenging. In this work, we determine the influence of incorporating a ZnO layer on the ferroelectric and photoresponse behavior of an epitaxial BiFe_0.9Co_0.1O₃ (BFCO)-based heterostructure. The device is completed with Sn-doped In₂O₃ (ITO) and La_0.7Sr_0.3MnO₃ (LSMO) electrodes. This all-oxide system is stable under ambient conditions and displays robust ferroelectricity. The coupled ferroelectricity-photoresponse measurements demonstrate that the short circuit current can be modulated by ferroelectric polarization in up to 68% under blue monochromatic light. Also, the responsivity of the system with the ZnO-modified interface is larger than that of the system with no ZnO. Complementary band energy alignment studies reveal that the observed increase in the short circuit current density of the device with ZnO is attributed to lower Fermi level energy at the ZnO/BFCO interface compared to the ITO/BFCO interface, which reduces charge recombination. Therefore, this study provides useful insights into the role of the ZnO interface layer in stable BFO-based devices to further explore their viability for potential optoelectronic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8251-8259"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11603610/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142764569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Paper-Based Electret Sensor/Actuator Array for Tactile Interaction","authors":"Yunfei Bai,&nbsp;Wenying Qiu,&nbsp;Jing Xing,&nbsp;Ruixi Wang,&nbsp;Dekuan Zhu and Min Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0173710.1021/acsaelm.4c01737","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01737https://doi.org/10.1021/acsaelm.4c01737","url":null,"abstract":"<p >This study proposes a portable, paper-based tactile feedback system interaction device, engineered to serve blind users with an integrated platform for both input and output functionalities. The device comprises six functional units, each measuring 10 × 10 mm, crafted using a sandwiched structure of paper substrate, graphite, and two PLA films via the hot-pressing technique. Utilizing the corona charging method, the PLA electret films exhibit an impressive piezoelectric coefficient peaking at 3578 pC/N, making it highly sensitive for both sensing and actuating. The pressure sensor, used for writing purposes, demonstrates a sensitivity of 1.01 V/N, while the vibration actuator, used for reading, achieves an output force of 60 mN at an applied voltage of 400 V. Notably, both the surface charge density and the performance of the sensor and actuator stabilize post approximately 1000 interactions. Our psychophysical experiments indicate the device has a perceptible threshold voltage as low as 50 V. Subsequent tactile interaction communication tests offer a preliminary validation of the device’s applicability. The proposed tactile interaction device, being flexibly constructed and intrinsically biodegradable, paves the way for cost-effective tactile communication solutions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8497–8506 8497–8506"},"PeriodicalIF":4.3,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}