ACS Applied Electronic Materials最新文献_第2页

Structural Properties of Hf0.5Zr0.5O2 Integrated on Silicon 硅上集成Hf0.5Zr0.5O2的结构特性

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-25 DOI: 10.1021/acsaelm.5c00753

Kit de Hond, Mart Salverda, Majid Ahmadi, Evert Houwman, Beatriz Noheda, Bart J. Kooi, Guus Rijnders and Gertjan Koster*,

{"title":"Structural Properties of Hf0.5Zr0.5O2 Integrated on Silicon","authors":"Kit de Hond, Mart Salverda, Majid Ahmadi, Evert Houwman, Beatriz Noheda, Bart J. Kooi, Guus Rijnders and Gertjan Koster*, ","doi":"10.1021/acsaelm.5c00753","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00753","url":null,"abstract":"Miniaturization of ferroelectric materials is complicated due to depolarization fields that come into play at small length scales. Hf0.5Zr0.5O2 (HZO) has been shown to retain its ferroelectric properties down to the nanoscale, which makes it a promising candidate material for future ferroelectric applications. However, integration of HZO with silicon is needed for its further applicability. The discovery of a polar, rhombohedral HZO phase in HZO thin films grown on top of single-crystal STO substrates opens a way to make HZO compatible with silicon. We report upon one possible way of integrating HZO on silicon using a SrTiO3-buffered silicon substrate (Si:STO) and investigate its structural properties. We show that HZO crystallizes following the same epitaxial relationship and domain structure as it would on a single-crystal STO substrate, but the rhombohedral distortion is absent or strongly reduced. This dissimilarity may be explained by the difference in thermal expansion coefficients of silicon and STO. Persistent switching is observed in piezoresponse force microscopy and Kelvin probe microscopy, which could be indicative of ferroelectricity or ionic migration.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8013–8019"},"PeriodicalIF":4.7,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c00753","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Failure Mechanism of Flexible Transparent Conductor Materials under High Current 柔性透明导体材料在大电流作用下的失效机理

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-24 DOI: 10.1021/acsaelm.5c01088

Su Ding, Zemin Li, Qikun Li, Houlin Zhou, Nuanyang Cui, Long Gu, Wanli Li, Ke Li, Rusen Yang* and Zhi Jiang*,

{"title":"Failure Mechanism of Flexible Transparent Conductor Materials under High Current","authors":"Su Ding, Zemin Li, Qikun Li, Houlin Zhou, Nuanyang Cui, Long Gu, Wanli Li, Ke Li, Rusen Yang* and Zhi Jiang*, ","doi":"10.1021/acsaelm.5c01088","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01088","url":null,"abstract":"Flexible transparent conductors (FTCs) are key components of flexible photonic devices. However, their reliability under a high electrical current has not been sufficiently studied, which limits their practical applications. In this work, we investigated the failure processes of various FTCs under electrical current and proposed the underlying failure mechanism. For all tested FTCs composed of different materials, the failure was initiated at hot spots due to accumulated Joule heat, followed by the propagation of cracks perpendicular to the current and finally the electric spark discharge of accumulated charges beside the cracks. Consequently, the failed FTCs exhibit a distinctive morphology with a penetrating main crack perpendicular to the current and river-like minor cracks on both sides of the main crack. When comparing their reliability, Au film FTCs demonstrated relatively good performance, with a failure current of 0.34 A at 25 °C and 1.52 A at −196 °C for samples with a sheet resistance of 20.28 Ω/sq. The revealed mechanism provides critical insights into the design and protection of emerging FTCs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8108–8115"},"PeriodicalIF":4.7,"publicationDate":"2025-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Operando Hall Measurement of Covalent Functionalization of a Ag/AgCl Gated Graphene Field Effect Transistor in a Flow Cell 流动电池中Ag/AgCl门控石墨烯场效应晶体管共价功能化的Operando Hall测量

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-23 DOI: 10.1021/acsaelm.5c01109

Bahar Molavi, Claudia M. Bazán, Delphine Bouilly and Thomas Szkopek*,

{"title":"Operando Hall Measurement of Covalent Functionalization of a Ag/AgCl Gated Graphene Field Effect Transistor in a Flow Cell","authors":"Bahar Molavi, Claudia M. Bazán, Delphine Bouilly and Thomas Szkopek*, ","doi":"10.1021/acsaelm.5c01109","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01109","url":null,"abstract":"The unique electronic properties of graphene have attracted attention for its applications in sensor technologies. To fully understand and optimize graphene-based sensing and functionalization, it is necessary to quantify the effect of these processes on graphene’s charge carrier density and mobility. Here, we introduce an integrated measurement system that combines Hall effect and field effect measurement techniques with a flow cell, enabling operando, real-time characterization of graphene’s charge carrier density and mobility. The microfluidic cell includes a Ag/AgCl gate electrode, enabling electrolyte gated Hall and field effect measurements, thereby permitting operando monitoring of dynamic processes such as gate-controlled graphene functionalization. Operando measurement of gate-controlled functionalization of graphene with 4-carboxybenzene tetrafluoroborate (CBDT) reveals a real-time decrease of charge carrier mobility with a minimal change in charge carrier density. Our observations are in qualitative agreement with a resonant short-range charge carrier scattering model, appropriate to covalent attachment of CBDT to graphene. Raman spectroscopy independently confirms the covalent attachment of functional groups. The microfluidic Hall measurement technique can be extended to the study of other low-dimensional electronics systems used for sensing liquid phase analytes.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8116–8123"},"PeriodicalIF":4.7,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Dot Energy Circuits Based on Energy Transfer Driven by Plasmonic Metal Oxide Metasurfaces 基于等离子体金属氧化物超表面驱动能量传递的量子点能量电路

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-22 DOI: 10.1021/acsaelm.5c01521

Seyed M. Sadeghi*, Rithvik Reddy Gutha and Christina Sharp,

{"title":"Quantum Dot Energy Circuits Based on Energy Transfer Driven by Plasmonic Metal Oxide Metasurfaces","authors":"Seyed M. Sadeghi*, Rithvik Reddy Gutha and Christina Sharp, ","doi":"10.1021/acsaelm.5c01521","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01521","url":null,"abstract":"Semiconductor heterostructures composed of multiple layers of different colloidal quantum dots (QDs) are key components for various devices, ranging from solar cells to light-emitting diodes. We investigate the control of energy transfer within a heterostructure comprising CdSe/ZnS and InP/ZnS core–shell QDs in interaction with a plasmonic metal oxide metasurface (PMOM). Such a metasurface is engineered with arrays of gold nanoantennas embedded in a thin Si layer and coated with an ultrathin film of Al oxide. We show that the bottom CdSe/ZnS QD layer, which is in direct contact with the metasurface, is driven into a state of directed energy transfer funneling. This behavior is attributed to localized surface plasmon resonances and hot-electron-induced defect passivation. In contrast, the top InP/ZnS QD layer is primarily influenced by surface lattice resonances, which enhance its receptivity and efficiency in capturing energy. The results suggest the formation of an energy circuit, wherein energy flows from the smallest CdSe/ZnS QDs to larger ones and is then routed to the upper layer, forming an energy gate toward the InP/ZnS QDs. The results offer a promising path toward making energy (excitons) transfer more efficient in complicated QD structures.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8277–8285"},"PeriodicalIF":4.7,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ion-Gated MoS2 Unipolar Synaptic Transistors for Neuromorphic Computing and Physics-Inspired Image Processing 用于神经形态计算和物理启发图像处理的离子门控MoS2单极突触晶体管

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-22 DOI: 10.1021/acsaelm.5c01133

Zuyu Xu, Yuhang Pan, Jiale Wang, Bin Lv, Zhitong Wang, Jianxun Zou, Zhe Feng, Wenbin Guo*, Jun Wang*, Yunlai Zhu, Zuheng Wu and Yuehua Dai,

{"title":"Ion-Gated MoS2 Unipolar Synaptic Transistors for Neuromorphic Computing and Physics-Inspired Image Processing","authors":"Zuyu Xu, Yuhang Pan, Jiale Wang, Bin Lv, Zhitong Wang, Jianxun Zou, Zhe Feng, Wenbin Guo*, Jun Wang*, Yunlai Zhu, Zuheng Wu and Yuehua Dai, ","doi":"10.1021/acsaelm.5c01133","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01133","url":null,"abstract":"Unipolar synaptic plasticity constitutes a critical requirement for neuromorphic systems interfacing with inherently unipolar sensory data streams, yet conventional synaptic devices remain constrained by bipolar operational modes that limit compatibility and energy efficiency. In this work, we design a few-layer MoS2-based ion-gated synaptic transistor that achieves unipolar synaptic enhancement and suppression under both positive and negative gate biases by dynamically regulating gate voltage pulses and drain-source voltage (VDS). Device physics analysis reveals synaptic plasticity governed by cation migration kinetics and relaxation dynamics in the ionic liquid dielectric, with threshold-dependent behavior emerging from gate and VDS terminal responses. Utilizing this dual-gating mechanism, we implement an optimized reservoir computing framework achieving 98.3% accuracy in digit classification, enhancing baseline performance by 3% through unipolar voltage coding validated through numerical simulations. Moreover, we develop a physics-integrated image processing architecture that directly incorporates device characteristics to execute local contrast enhancement and texture refinement, operating at about 2 orders of magnitude lower power consumption than conventional von Neumann systems. This work establishes 2D van der Waals materials as a versatile platform for codesigning neuromorphic hardware and adaptive algorithms, which advance energy-efficient, bioinspired computing systems compatible with real-world sensory inputs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8124–8134"},"PeriodicalIF":4.7,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Skyrmion Diverter Based on Symmetric Multilayer System Driven by Spin–Orbit Torque 基于自旋-轨道转矩驱动的对称多层系统的Skyrmion分流器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-21 DOI: 10.1021/acsaelm.5c01039

Jing Guo, Xin Zhang, Na Cai and Yan Liu*,

{"title":"Skyrmion Diverter Based on Symmetric Multilayer System Driven by Spin–Orbit Torque","authors":"Jing Guo, Xin Zhang, Na Cai and Yan Liu*, ","doi":"10.1021/acsaelm.5c01039","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01039","url":null,"abstract":"Magnetic skyrmions, as topologically protected spin textures with nanoscale size, hold great promise for high-density and low-energy-consumption spintronic applications. However, achieving precise and stable skyrmion separation in synthetic antiferromagnetic systems remains challenging due to synchronization effects and insufficient directional control under conventional driving mechanisms, and the practical utilization of separated skyrmions remains largely unexplored. In this paper, a funnel-shaped skyrmion diverter is proposed in a symmetric multilayer system to facilitate the separation of synthetic antiferromagnetic skyrmions using spin–orbit torque. Unlike conventional approaches, the symmetric chiral configuration with opposing Dzyaloshinskii–Moriya interactions eliminates synchronization effects and achieves robust directional control, while the semicircular bifurcation geometry significantly accelerates skyrmion dynamics. The separation mechanism is analyzed using the Thiele equation, validated by micromagnetic simulations, and the diverter’s performance in terms of separation precision, stability, loss rate, and response time is systematically investigated. The device achieves ultralow energy consumption, coupled with integrated dual-readers enabling real-time parallel detection and information proofreading, thereby ensuring separation precision under dynamic conditions. This work offers an energy-efficient, fault-tolerant skyrmion platform for next-generation spintronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8092–8099"},"PeriodicalIF":4.7,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oblique Angle-Engineered IGZO Floating Gates for Light-Assisted Multi-State Memory Devices 用于光辅助多态存储器件的斜角度工程IGZO浮栅

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-21 DOI: 10.1021/acsaelm.5c01276

Dong Hyun Lee, Gyeongho Lee, Yeong Jae Kim, Jae Yeon Park*, Han-Koo Lee* and Hocheon Yoo*,

{"title":"Oblique Angle-Engineered IGZO Floating Gates for Light-Assisted Multi-State Memory Devices","authors":"Dong Hyun Lee, Gyeongho Lee, Yeong Jae Kim, Jae Yeon Park*, Han-Koo Lee* and Hocheon Yoo*, ","doi":"10.1021/acsaelm.5c01276","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01276","url":null,"abstract":"In this study, we present a floating gate memory device based on indium–gallium zinc oxide (IGZO), enhanced by applying the oblique angle deposition (OAD) technique. The IGZO floating gate with a nanostructure created using the OAD technique exhibits reduced conductivity. As a result, the IGZO floating gate memory with OAD technique demonstrates a high on/off ratio (∼106) and narrow hysteresis characteristics (0.24 V) in the transfer curve. Additionally, the photoresponse of dinaphtho[2,3 b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) channel, which has a band gap of ∼2.61 eV, enables the light-induced programming and facilitates the charge accumulation in the floating gate. The proposed memory device enables multilevel programming through both photonic (λ = 450 nm) and electrical (VG = +60 V) inputs, either independently or in combination. Under dual-mode operation, a substantial threshold voltage shift (ΔVTH = 23.1 V) is achieved, whereas single-mode inputs yield more moderate shifts of 11.8 V (VG only) and 5.9 V (light only). This dual-mode capability allows for distinct programmable memory states with enhanced control and precision. In contrast, the IGZO floating gate transistor without the OAD technique exhibits a relatively low on/off ratio (∼103), high off-current (∼10–7 A), and broad hysteresis characteristics (>30 V). These results suggest that the IGZO floating gate with the OAD technique applied is appropriate for memory operation.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8191–8199"},"PeriodicalIF":4.7,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Durable, Breathable, and Sweat-Resistant Nanocrack-Based Fiber Strain Sensors for Joint Monitoring in Elderly Stroke Rehabilitation 耐久、透气、防汗的纳米裂纹纤维应变传感器用于老年中风康复的关节监测

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-20 DOI: 10.1021/acsaelm.5c01294

Xinxin Zhang, Dongxing Lu, Huihui Xu, Zhengtong Song, Xiuming Cao, Yanhong Cao, Yong Xu, Qufu Wei and Qingqing Wang*,

{"title":"Durable, Breathable, and Sweat-Resistant Nanocrack-Based Fiber Strain Sensors for Joint Monitoring in Elderly Stroke Rehabilitation","authors":"Xinxin Zhang, Dongxing Lu, Huihui Xu, Zhengtong Song, Xiuming Cao, Yanhong Cao, Yong Xu, Qufu Wei and Qingqing Wang*, ","doi":"10.1021/acsaelm.5c01294","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01294","url":null,"abstract":"Flexible fiber-based strain sensors show great promise for joint motion monitoring in stroke rehabilitation and elderly care. However, the rational design of low-cost sensors that simultaneously offer high sensitivity, excellent stability, and practical applicability is still a great challenge. In this study, multiwalled carbon nanotubes were incorporated into thermoplastic polyurethane to fabricate a coaxial fiber structure with crack effects via wet spinning. By adjusting the extrusion speed ratio between the core and sheath layers, the thickness of the fiber shell was optimized and a fine crack network was formed, enhancing both sensitivity and mechanical properties. Experimental results show that the fabricated fiber sensor exhibits a high sensitivity (strain range: 70–175%, gauge factor = 3.154), with a wide detection range (250% strain), an ultralow detection limit (<0.1%), and excellent cyclic durability (>2000 cycles). The sensor can be effectively applied to monitor human joint movements. Meanwhile, the nanocrack-based fiber sensor (NFS) exhibits excellent photothermal characteristics, strong resistance to sweat and washing, and good breathability (981.9 mm/s). Notably, the NFS enables real-time monitoring of physiological movements with Bluetooth data transmission. Furthermore, its localized photothermal effect can promote blood circulation, providing additional therapeutic value in stroke rehabilitation. These features highlight the great potential of NFS sensors in smart healthcare and wearable health technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8200–8210"},"PeriodicalIF":4.7,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Freeze-Resistant and Tough Cellulose-Integrated Conductive Hydrogels for Flexible Supercapacitors and Self-Powered Electronic Devices 用于柔性超级电容器和自供电电子设备的抗冻和坚韧纤维素集成导电水凝胶

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-20 DOI: 10.1021/acsaelm.5c01008

Jie Lu, XiaoLong Zhu, Yuting Zhang, Fuyou Wang, Hui Xie*, Lizhen Guo*, He Liu and Xu Xu*,

{"title":"Freeze-Resistant and Tough Cellulose-Integrated Conductive Hydrogels for Flexible Supercapacitors and Self-Powered Electronic Devices","authors":"Jie Lu, XiaoLong Zhu, Yuting Zhang, Fuyou Wang, Hui Xie*, Lizhen Guo*, He Liu and Xu Xu*, ","doi":"10.1021/acsaelm.5c01008","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01008","url":null,"abstract":"Hydrogel electrolytes hold significant promise for flexible and wearable electronics but often suffer from limited ionic conductivity, poor mechanical integrity, and vulnerability to extreme environmental conditions. Herein, a cellulose-integrated conductive hydrogel electrolyte (MCBH-Zn) with outstanding mechanical strength and freeze resistance is reported. The MCBH-Zn hydrogel achieves a high compressive strength of 5.16 MPa and a tensile fracture stress of 312 kPa, enabled by the synergistic effects of a covalently cross-linked polyacrylamide (PAM) network, hydrogen bonding between PAM and cellulose, and coordination interactions between bentonite (BT) and cellulose. Additionally, it delivers excellent ionic conductivity of 88.9 mS cm–1 at room temperature and 27.3 mS cm–1 at −60 °C. Consequently, a flexible solid-state zinc-ion hybrid supercapacitor (MCBH-ZHSC) assembled with MCBH-Zn delivers stable electrochemical behavior across a wide temperature range and maintains a superior capacity retention of 93% after 10,000 cycles at 10.0 A g–1. Furthermore, the MCBH-Zn-based wearable device demonstrates self-sustained flexibility and efficient energy harvesting and conversion. This work offers a facile strategy for engineering high-performance hydrogel electrolytes tailored for next-generation wearable technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8081–8091"},"PeriodicalIF":4.7,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charged Domain Walls Enhanced Photoelectric Response of KTN Crystals under UV Irradiation 带电畴壁增强KTN晶体在紫外辐射下的光电响应

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-19 DOI: 10.1021/acsaelm.5c01318

Lijie Jin, Bing Liu*, Naishen Liu, Xiaochen Liu, Yuguo Yang, Yuanyuan Zhang, Rui Zhang, Huajian Yu, Chengcheng Qiu and Xuping Wang*,

{"title":"Charged Domain Walls Enhanced Photoelectric Response of KTN Crystals under UV Irradiation","authors":"Lijie Jin, Bing Liu*, Naishen Liu, Xiaochen Liu, Yuguo Yang, Yuanyuan Zhang, Rui Zhang, Huajian Yu, Chengcheng Qiu and Xuping Wang*, ","doi":"10.1021/acsaelm.5c01318","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01318","url":null,"abstract":"Ultraviolet (UV) illumination has been applied in KTN electro-optic device development to enhance performance, revealing the material’s potential for UV photoelectric response. Here we systematically investigate the photocurrent behavior of KTN crystals under UV illumination, with a particular focus on the role of charged domain walls (CDWs) in the ferroelectric phase. Temperature-dependent photocurrent profiling reveals a peak response in the ferroelectric phase, approximately 20 °C below the Curie point (TC), with a magnitude nearly an order higher than that in the paraelectric phase. The enhanced photocurrent is attributed to head-to-head (H–H) and tail-to-tail (T–T) CDWs, as confirmed by microscopic characterizations. These CDWs generate internal electric fields that separate photogenerated carriers and induce local band bending, facilitating the formation of high-mobility conduction channels along domain walls. A drift–diffusion model incorporating the effects of CDWs explains the temperature-dependent photocurrent across the phase transition. Transient photocurrent response shows that CDWs sustain photocurrent growth in the ferroelectric phase, while the response decays in the paraelectric phase. These findings highlight the critical role of CDWs in modulating carrier dynamics and improving UV photoelectric performance in ferroelectric materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 17","pages":"8227–8235"},"PeriodicalIF":4.7,"publicationDate":"2025-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145009820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0