ACS Applied Electronic Materials最新文献

{"title":"Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching","authors":"Shogo Hatayama*,&nbsp;Keisuke Hamano,&nbsp;Yi Shuang,&nbsp;Mihyeon Kim,&nbsp;Paul Fons and Yuta Saito*,&nbsp;","doi":"10.1021/acsaelm.5c0029210.1021/acsaelm.5c00292","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00292https://doi.org/10.1021/acsaelm.5c00292","url":null,"abstract":"<p >Ovonic threshold switching (OTS) is a type of volatile resistive switching primarily observed in amorphous chalcogenides. The switching process involves an abrupt transition from a high-resistance state to a low-resistance state when a voltage above a specific threshold (<i>V</i>_th) is applied. OTS materials serve as selectors in nonvolatile memories with 3D XPoint-type structures, in combination with phase-change materials (PCMs), which exhibit threshold-type nonvolatile resistive switching. Despite the existence of transport models that can explain the OTS behavior, the role of the metal–OTS interface has been underexplored. This study employs angle-resolved hard X-ray photoelectron spectroscopy to investigate the interfacial electronic structure of Ge–Te-based OTS materials with different metal electrodes. The results indicate that <i>V</i>_th varies with the work function of the contact metal because the onset voltage for impact ionization is affected by band bending at the interface. Our findings reveal that interfacial properties significantly influence OTS behavior, offering a novel method for controlling <i>V</i>_th. This study underscores the importance of selecting appropriate metal contacts for optimizing the performance of OTS devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2650–2659 2650–2659"},"PeriodicalIF":4.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00292","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heavily Doped Monolayer MoS2 by Sub-nm Thick Assembly of Dopant Molecules","authors":"Puneet Jain,&nbsp;Shotaro Yotsuya,&nbsp;Terry Y.T. Hung,&nbsp;Kosuke Nagashio and Daisuke Kiriya*,&nbsp;","doi":"10.1021/acsaelm.4c0196010.1021/acsaelm.4c01960","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01960https://doi.org/10.1021/acsaelm.4c01960","url":null,"abstract":"<p >Molybdenum disulfide (MoS₂) is a widely studied material in the family of transition metal dichalcogenides (TMDCs) and has potential applications in electronics, optoelectronics, and energy harvesting due to its high mobility, excellent gate controllability, high ON/OFF current ratio, low standby current, small dielectric constant, and good stability, etc. Doping is a very significant approach to manipulate the electronic and optical properties of 2D materials, because by doping, we can modulate the electronic structures and device performance of 2D materials. In the present work, we demonstrate molecule-based doping approach for a MoS₂ monolayer (ML) with unusually few nanometers thick layered assembly formation of the molecular layer, even for single-to-several layered situations by the solution process. We have chosen an asymmetric molecule, triphenylphosphine (PPh₃), as phosphorus in PPh₃ has a lone pair of electrons, which shows heavy doping to MoS₂ ML, via the assembly of PPh₃ molecules, which is formed by the melting, evaporation, and movement of PPh₃ droplets during the heating process. By the analyses using device arrays with changing channel length and width of the devices, it is found that the doping characteristics by PPh₃ molecules are dependent on the geometry of the devices. For the well-wetting situation of the PPh₃ melt on a wider, more than ∼20 μm width MoS₂ channel, the PPh₃ molecules would cover the surface and assemble on the surface of MoS₂, with the thickness of a few molecular layers. Even though the PPh₃ dopant molecular assembled layer is nm order of magnitude thick, PPh₃ molecules still change MoS₂ MLs to a degenerately doped state. The molecular layer is thin enough to form a clean and transparent layer on the MoS₂ ML. The finding in this study is that it is possible to combine and stack with other materials for designing electronic configurations in TMDC devices to improve electronic and optoelectronic performances.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2298–2304 2298–2304"},"PeriodicalIF":4.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Programmable Curvature in Liquid Crystal Elastomers for Fabrication of 3D Electronics","authors":"Jared A. Gibson,&nbsp;Sasha M. George,&nbsp;Cedric P. Ambulo,&nbsp;Manivannan Sivaperuman Kalairaj,&nbsp;Asaf Dana,&nbsp;Yeh-Chia Tseng,&nbsp;Anesia D. Auguste,&nbsp;Melbs LeMieux,&nbsp;Michael E. McConney and Taylor H. Ware*,&nbsp;","doi":"10.1021/acsaelm.4c0217710.1021/acsaelm.4c02177","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02177https://doi.org/10.1021/acsaelm.4c02177","url":null,"abstract":"<p >Curved electronics hold immense promise for applications ranging from flexible displays to biomedical devices. Transitioning from conventional planar fabrication to three-dimensional (3D) geometries remains a significant challenge. To manufacture 3D electronics, either the patterning process must be adapted to 3D forms, or planar substrates must be deformed into 3D shapes. Liquid crystal elastomers (LCEs) offer a promising platform by enabling intrinsic shape change from flat to intricate 3D forms through controlled molecular alignment. By patterning LCE surfaces with conductive traces prior to deformation, curved electronics can be fabricated using established planar deposition methods. Cross-linking LCEs with programmed molecular alignment at elevated temperatures allows for the fabrication of films that can adopt tunable normal and Gaussian curvature near room temperature. Increasing the nematic–isotropic transition temperature (<i>T</i>_NI) of the LCE allows for a wide range of cross-linking temperatures, which in turn allows for the magnitude of the deformation to be controlled. Here, we present a tunable LCE composition with a <i>T</i>_NI up to 162 ± 2 °C. Moreover, we fabricate hemispherical films with radii of curvature ranging from 24.57 ± 2.46 to 41.31 ± 2.82 mm at room temperature. Additionally, the effect of metallization on the deformation of LCEs into 3D forms is characterized. We envision applications for this 3D electronic fabrication platform for wearable devices in health monitoring systems designed to integrate with curvilinear human anatomy.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2373–2383 2373–2383"},"PeriodicalIF":4.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02177","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical Energy Storage Devices─Batteries, Supercapacitors, and Battery–Supercapacitor Hybrid Devices","authors":"Lei Liu,&nbsp;Xiyao Zhang,&nbsp;Yanghe Liu and Xiong Gong*,&nbsp;","doi":"10.1021/acsaelm.5c0006910.1021/acsaelm.5c00069","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00069https://doi.org/10.1021/acsaelm.5c00069","url":null,"abstract":"<p >Great energy consumption by the rapidly growing population has demanded the development of electrochemical energy storage devices with high power density, high energy density, and long cycle stability. Batteries (in particular, lithium-ion batteries), supercapacitors, and battery–supercapacitor hybrid devices are promising electrochemical energy storage devices. This review highlights recent progress in the development of lithium-ion batteries, supercapacitors, and battery–supercapacitor hybrid devices. Afterward, various materials applicable to create the above electrochemical energy storage devices are highlighted. Finally, we present our perspectives on the development directions of lithium-ion batteries, supercapacitors, and battery–supercapacitor hybrid devices. We hope that this review guides researchers in the further design of materials for developing lithium-ion batteries, supercapacitors, and battery–supercapacitor hybrid devices with high performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2233–2270 2233–2270"},"PeriodicalIF":4.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Organic Field-Effect Transistors Based on a Self-Assembled Polar Dielectric Monolayer","authors":"Jia-Yu Lin,&nbsp;Fang-Chi Hsu*,&nbsp;Yu-Chieh Chao,&nbsp;Chia-Chun Ho,&nbsp;Meng-Ching Lai,&nbsp;Tai-Yi Li and Yang-Fang Chen*,&nbsp;","doi":"10.1021/acsaelm.5c0008810.1021/acsaelm.5c00088","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00088https://doi.org/10.1021/acsaelm.5c00088","url":null,"abstract":"<p >A high-performance bottom-gate organic field-effect transistor (OFET) is proposed and demonstrated based on a polymer-based self-assembled monolayer (SAM) of poly[3-(6-carboxyhexyl)thiophene-2,5-diyl] (P3HT-COOH) as the gate insulator. The P3HT-COOH molecules have a significant portion of side chains with carboxylic acid groups anchored on the ITO gate electrode, resulting in an ordered arrangement and the formation of a polar monolayer. The fabricated OFETs based on the P3HT active channel exhibit outstanding electrical properties, including a high field-effect mobility (7.21 × 10^–2 cm² V^–1 s^–1), high on/off ratios (∼10⁴), reduced trap density (5.36 × 10¹¹ cm^–2), extremely low threshold voltage (−0.2 V), and low subthreshold swing (113 mV decay^–1). Particularly, the threshold voltage of the studied devices sets the lowest record compared to previous studies. The exceptionally good performance can be attributed to the fact that in addition to the inherent polar field, the ultrathin SAM dielectric with periodic packing enables a much smoother surface texture and simultaneously promotes polymer chain alignment of the active channel with enhanced crystallinity, which highlights the role of the P3HT-COOH polar monolayer in optimizing the structure and electronic properties of the active channel. Thus, those organic thin-film transistors incorporating polar SAMs as dielectrics offer a promising strategy for enhancing performance and expanding applications in low-power electronic technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2602–2609 2602–2609"},"PeriodicalIF":4.3,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory","authors":"Minseo Noh,&nbsp;Hyogeun Park and Sungjun Kim*,&nbsp;","doi":"10.1021/acsaelm.5c0013110.1021/acsaelm.5c00131","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00131https://doi.org/10.1021/acsaelm.5c00131","url":null,"abstract":"<p >The exponential growth in data generation and processing demands has exposed the limitations of the traditional von Neumann architecture. The bottleneck caused by the separation of memory and processing units results in significant constraints on computational speed and energy efficiency. Neuromorphic computing, inspired by the structure and function of biological neural networks, has emerged as a promising alternative that enables adaptive and energy-efficient information processing. Among the various technologies advancing neuromorphic systems, Resistive Random Access Memory (RRAM) stands out due to its high density, low power consumption, fast switching speeds, and multilevel data storage capabilities. RRAM operates based on resistive switching (RS), which dynamically switches between the high-resistance state (HRS) and the low-resistance state (LRS) in response to electrical stimuli. This characteristic enables RRAM to effectively mimic synaptic plasticity, a key feature of biological neural networks, including potentiation, depression, and spike-timing dependent plasticity (STDP). Additionally, RRAM-based devices can emulate complex cognitive learning processes such as learning and forgetting, nociceptive behavior, Pavlovian conditioning, and aversion responses. The integration of RRAM with in-memory computing (CIM) architectures eliminates data transfer bottlenecks and further enhances computational efficiency by performing operations such as vector-matrix multiplication within the memory cells. This synergy is particularly advantageous for energy-efficient, miniaturized edge devices and Internet of Things (IoT) applications, enabling real-time learning and decision-making in advanced AI systems. This review provides an in-depth analysis of the role of RRAM technology in neuromorphic computing, discussing resistive switching mechanisms, architectural innovations, and its applicability in cognitive systems. The unique properties of RRAM position it as a core technology for next-generation adaptive computing with the potential to drive innovations in machine learning, AI, and real-time processing systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2156–2172 2156–2172"},"PeriodicalIF":4.3,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Critical Impact of Source/Drain Surface Modification Treatment on the Performance of 4H-21DNTT OTFT","authors":"Anubha Bilgaiyan*,&nbsp;Miho Abiko,&nbsp;Kaori Watanabe and Makoto Mizukami*,&nbsp;","doi":"10.1021/acsaelm.5c0004310.1021/acsaelm.5c00043","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00043https://doi.org/10.1021/acsaelm.5c00043","url":null,"abstract":"<p >The metal/semiconductor interface plays a crucial role in determining contact resistance and it significantly influences the performance of organic thin-film transistors (OTFTs). The quantitative impact of UV–ozone (UV–O3) and 2,3,4,5,6-pentafluorothiophenol (PFBT) self-assembled monolayer (SAM) treatment on the Au source/drain contact for bottom-contact (BC) OTFTs with 4H-21DNTT as an organic semiconductor and Parylene C as an organic gate dielectric was systematically analyzed. The interface properties were characterized by AC3, X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), contact resistance, and trap state analysis. The results showed that with PFBT SAM and UV–O3 treatment, the OTFT performance was significantly improved, while on increasing the UV–O3 exposure time from 3 to 7 min, the threshold voltage shifted from 1.2 to 4.6 V. It was observed that due to UV–O3 exposure, the interface traps were induced, as chemical groups (C–O) were formed in underlying Parylene C. The best mobility of 11.39 cm² V^–1 s^–1 was obtained for 4H-21DNTT OTFT with UV–O3 (3 min exposure) + PFBT Au surface treatment. The results demonstrate that a simple UV–O3 and PFBT interface treatment has a substancial effect on the properties of the metal/organic interface and the underlying dielectric surface. Thus, the regulation of the UV-O3 exposure duration gives a way to modulate the OTFT parameters.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2583–2592 2583–2592"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"One-Pot and Mask-Less Realization Approach for Polypyrrole–Polydopamine-Based Organic Electrochemical Transistors","authors":"Rocco Carcione,&nbsp;Simone Luigi Marasso,&nbsp;Valeria Guglielmotti,&nbsp;Matteo Cocuzza,&nbsp;Emanuela Tamburri* and Silvia Battistoni*,&nbsp;","doi":"10.1021/acsaelm.5c0012410.1021/acsaelm.5c00124","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00124https://doi.org/10.1021/acsaelm.5c00124","url":null,"abstract":"<p >Organic electrochemical transistors (OECTs) are organic-based devices that are gaining growing interest from the scientific community thanks to the possibility of exploiting their electron/ion transduction properties in multiple applications. Typically designed starting from commercial PEDOT:PSS dispersions and multistep photolithographic methods, few examples of OECTs realized with different methodologies and protocols and diverse conductive polymers have been reported so far. Here, we report a facile, reliable, and mask-less electrochemical approach for realizing hybrid polypyrrole–polydopamine (PPy_PDA)-based OECTs. The proposed strategy ensures the control of the conductive channel’s properties while maintaining low-cost and low-waste channel fabrication. The presented method allows the manufacturing of a well-performing OECT with a low voltage range (&lt;1 V), remarkable transconductance (<i>g</i>_m = 0.26 mS), and excellent stability to pulse stimulation. The OECT functioning properties are paired and put in perspective with classical electrical (i.e., 2-point probe method) characterizations, along with cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) techniques, and structural analysis (i.e., Raman spectroscopy). The collected results convincingly demonstrate that the proposed approach would represent a simple yet effective route for exploiting PPy in OECT applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2619–2628 2619–2628"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic Optimization of NO2 Detection Using Activated Carbon-Based Resistive Sensors","authors":"Proscovia Kyokunzire,&nbsp;Jean Zaraket,&nbsp;Vanessa Fierro and Alain Celzard*,&nbsp;","doi":"10.1021/acsaelm.4c0215110.1021/acsaelm.4c02151","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02151https://doi.org/10.1021/acsaelm.4c02151","url":null,"abstract":"<p >Gas sensors play a crucial role in detecting harmful environmental gases. This study focuses on optimizing a resistive sensing layer for nitrogen dioxide (NO₂) detection at room temperature (RT = 25 °C), based on commercial activated carbon (AC). NO₂ sensing was assessed over a dynamic concentration range from 1 to 20 ppm. The impact of cycle time, interdigitated electrode gap, NO₂ gas flow rate, synthetic air purge rate and saturation on sensor response was examined. NO₂ sensing proceeded by adsorption, facilitated by the porosity and high surface area of AC. Sensing capability is reversible, suggesting purely physical adsorption. A response limit close to 65% was observed at sensor saturation. This work highlights the potential of commercially available AC as a practical solution for environmental NO₂ monitoring, even in the absence of any additional chemical modification.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2349–2361 2349–2361"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Self-Powered Two-Dimensional Acceleration Sensing Method Based on Triboelectric Nanogenerators for Power Transmission Lines","authors":"Changxin Liu*,&nbsp;Yi Wang,&nbsp;Yingli Lu,&nbsp;Zhijie Hao,&nbsp;Zhenyao Ma,&nbsp;Yan Qin,&nbsp;Bo Dong and Xun Zhou,&nbsp;","doi":"10.1021/acsaelm.4c0216910.1021/acsaelm.4c02169","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02169https://doi.org/10.1021/acsaelm.4c02169","url":null,"abstract":"<p >Under the backdrop of severe weather conditions, such as low temperatures and strong winds in high-latitude winters, power transmission lines are prone to uneven icing. The galloping of the lines is exacerbated under the influence of icing and wind excitation, which can lead to damage such as insulator failure and broken strands. The vibration status of power transmission lines is a key parameter of line galloping, and the effective monitoring of its characteristics is crucial for ensuring the safety and reliability of power systems. In response to this challenge, this study proposes a self-powered two-dimensional frequency–acceleration sensing method based on triboelectric nanogenerators. A vibration frequency sensing model and an acceleration sensing model for the TDA-TENG (two-dimensional accelerometer based on a triboelectric nanogenerator) are established, a prototype of the self-powered two-dimensional frequency–acceleration sensor is fabricated, and experimental validation is conducted. The study shows that this method can effectively capture vibrations within a frequency range of 1–5 Hz with an error rate of only 3.274%, and it exhibits good durability and stability. In terms of acceleration sensing, the TDA-TENG can accurately detect vibration acceleration. These characteristics give TDA-TENG significant potential in the field of vibration monitoring. The research provides an idea for self-powered sensor technology for power transmission lines and has an important practical application value.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2362–2372 2362–2372"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}