ACS Applied Electronic Materials最新文献

{"title":"Organic–Inorganic Composite Dielectrics for Flexible C8-BTBT Thin-Film Transistors with Enhanced Molecular Ordering and Low-Voltage Operation","authors":"Fenglan Kuang,&nbsp;Yicong Ma,&nbsp;Xiaokang Sun,&nbsp;Zheng Li","doi":"10.1021/acsaelm.6c01437","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01437","url":null,"abstract":"<p>Flexible thin-film transistors (TFTs) are key components in flexible electronics. Here, we report a solution-processed composite dielectric designed to overcome the long-standing trade-off among dielectric constant, mechanical flexibility, and channel-orientation control. The incorporation of ZrO₂ into the cross-linked poly(4-vinylphenol) (PVP) matrix increases the dielectric constant to ∼15, suppresses leakage current, and improves film uniformity while preserving flexibility. At the same time, the increased surface free energy and reduced surface roughness of the composite dielectric create a more favorable interface for the ordered growth of C8-BTBT. As a result, the organic semiconductor film exhibits improved crystalline orientation and reduced disorder-related interfacial trapping, leading to more efficient charge accumulation and charge transport. C8-BTBT TFTs based on the composite dielectric operate at low voltages (≤5 V) and deliver a high field-effect mobility of 5.8 cm²/V·s, while retaining over 90% of their initial performance after repeated bending. In addition, flexible inverter circuits and ring oscillators are successfully demonstrated with low power consumption and stable operation. These results highlight organic–inorganic composite dielectrics as an effective strategy for simultaneously optimizing dielectric properties, semiconductor ordering, and mechanical robustness, providing a viable pathway toward low-power flexible integrated electronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9369–9379"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering Vertically Aligned ZnO Nanorods with Amorphous IGZO for High-Performance UV Photodetection","authors":"Bohr-Ran Huang,&nbsp;Ilmiatul Masfufiah,&nbsp;Nien-Ping Yang","doi":"10.1021/acsaelm.6c01908","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01908","url":null,"abstract":"<p>Ultraviolet photodetectors with low dark current and high photoresponse are still difficult to fabricate in a simple device architecture. Here, we report a ZnO nanorod/IGZO/n-Si heterostructure in which the amorphous indium gallium zinc oxide (IGZO) interlayer serves as a wide-bandgap carrier-transport and leakage-suppression layer between the UV-absorbing ZnO nanorods and the Si substrate. It was fabricated through a low-temperature process that combines Radio Frequency (RF) sputtering and hydrothermal growth. The ZnR/IGZO device exhibited substantially lower dark current while maintaining a strong UV photoresponse compared with the reference structures. Structural and optical analyses confirm the phase quality of the ZnO nanorods and the distinct roles of the two oxide layers in the heterostructure. Under UV illumination, the device exhibits a dark current of 6.02 × 10^–9 A and a photocurrent of 9.57 × 10^–5 A, together with a large photo-to-dark current ratio and stable switching behavior. These results show that introducing IGZO as an interfacial transport layer provides an effective strategy for simultaneously suppressing leakage current and maintaining strong photoresponse in ZnO nanorod-based UV photodetectors. These results provide a straightforward route toward oxide-based UV photodetectors and highlight the importance of controlling morphology and interface properties in simple photodetector architectures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9710–9719"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-Temperature Wafer-Scale Growth of 1T′-MoTe2 for Self-Powered Broadband and Polarization-Sensitive Photodetection toward Optical Communication","authors":"Vinit Sheokand,&nbsp;Damanpreet Kaur,&nbsp;Shiksha,&nbsp;Chaitanya B. Auti,&nbsp;Pradeep Kumar,&nbsp;Mukesh Kumar","doi":"10.1021/acsaelm.6c01814","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01814","url":null,"abstract":"<p>The scalable integration of two-dimensional (2D) semiconductors into next-generation optoelectronics demands moderate-temperature, wafer-scale synthesis routes compatible with industrial manufacturing. Here, we report the room-temperature growth of wafer-scale 1T′-MoTe₂ thin films via industrial-standard RF magnetron sputtering, establishing a simple and scalable approach for high-performance optoelectronic devices. Systematic optimization of RF power, deposition pressure, and growth time enables the realization of highly crystalline 1T′-MoTe₂. Raman spectroscopy confirms phase purity, high crystallinity, and polarization-dependent response, while large-area uniformity is demonstrated across a 2-inch wafer through spatial Raman mapping. The films exhibit a smooth and homogeneous morphology, while X-ray photoelectron spectroscopy reveals a self-limiting surface oxide layer that passivates the film and facilitates self-powered photodetection through an intrinsic built-in electric field. Photodetectors fabricated using 1T′-MoTe₂ films exhibit broadband self-powered photoresponse spanning from UV to near-infrared wavelengths (300–1550 nm), with a peak responsivity of 1.4 mA W^–1 and a detectivity of 7.8 × 10⁹ Jones at zero bias. Additionally, the devices demonstrate polarization-sensitive photoresponse with an anisotropy ratio of 2, along with imaging and optical communication capabilities, and exhibit excellent operational and ambient stability. These findings position room-temperature sputtered 1T′-MoTe₂ as a promising platform for scalable, low-power, and multifunctional optoelectronic technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9669–9679"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene Layer-Dependent Electromechanical Responses and Interfacial Transport in CGO Thin Films","authors":"Jin Kyu Han,&nbsp;Victor Buratto Tinti,&nbsp;Do Hyung Lee,&nbsp;Wooseok Song,&nbsp;Sang Don Bu,&nbsp;Vincenzo Esposito","doi":"10.1021/acsaelm.6c01903","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01903","url":null,"abstract":"<p>Oxide-based electromechanical materials are widely used in sensors, actuators, and energy conversion devices. Their performance is governed by electric-field-induced lattice deformation, and electromechanical responses have traditionally been tailored through composition, crystal structure, and defect engineering. However, the influence of electronic boundary conditions at two-dimensional material/oxide interfaces remains largely unexplored. Here, Gd-doped CeO₂ (CGO) thin films were deposited on controlled numbers of graphene layers to investigate graphene layer-dependent effects in electrostriction and electrical transport. Structural characterization confirmed the formation of polycrystalline CGO layers on graphene, whereas the electromechanical response exhibited a pronounced dependence on the number of graphene layers. In particular, the bilayer graphene structure exhibited the highest electrostriction coefficient and distinctive electrical transport characteristics. Raman spectroscopy revealed systematic changes in the graphene 2D band after CGO deposition, whereas electrical transport measurements demonstrated <em>R</em>_2T and nonlinear current-voltage behavior. Furthermore, the bias-dependent device-level resistance modulation indicated that the electrical characteristics of the graphene/CGO interface evolved under an applied electric field. Taken together, these observations are consistent with the possibility that graphene-dependent interfacial electrical conditions contribute to the electromechanical response of the CGO film. These findings identify the number of graphene layers as an important parameter governing the nonlinear electromechanical and interfacial transport behavior of CGO/graphene heterostructures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9700–9709"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-Driven Phase Reorientation and Tunability in Ba0.8Sr0.2TiO3 Thin Films on SrTiO3 and Silicon","authors":"Garima Kaura,&nbsp;Fang Liu,&nbsp;Basanta Roul,&nbsp;Saluru Baba Krupanidhi,&nbsp;Zuhuang Chen,&nbsp;Yun-Long Tang,&nbsp;Sujit Das","doi":"10.1021/acsaelm.6c01599","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01599","url":null,"abstract":"<p>The ability to realize stable dielectric tunability in ferroelectric thin films requires control over strain, thickness, and polar domain structure, particularly in materials exhibiting diffuse ferroelectric behavior. Here, we demonstrate that film thickness provides a key control parameter for domain configuration, phase-transition character, and dielectric response in epitaxial Ba₀_.₈Sr₀_.₂TiO₃ thin films. Using atomic-scale polarization mapping and dielectric spectroscopy, we show that increasing thickness drives a transition from coherently strained, tetragonal-dominated polarization at 60 nm to partially relaxed films at 150 nm with mixed orthorhombic and rhombohedral in-plane domains, with strain relaxation resolved by reciprocal space mapping between 100 and 150 nm. This domain reconfiguration produces a diffuse ferroelectric phase transition accompanied by a systematic enhancement of dielectric permittivity and large electric-field tunability reaching ∼79–85%, stable from 10 kHz to 1 MHz and up to ∼473 K on SrTiO₃. The observed dielectric diffuseness evolves systematically with film thickness, together with corresponding changes in ferroelectric domain configuration, transition temperature, and dielectric tunability. Importantly, the same thickness–domain–tunability correlations persist after silicon integration, yielding ∼70% tunability with comparable frequency and thermal stability up to ∼453 K. These findings establish a direct experimental link between dimensionality, domain evolution, diffuse ferroelectricity, and dielectric functionality in silicon-compatible oxide thin films.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9492–9502"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of ZrO2 Seed and Nb2O5 Capping Layers on the Ferroelectric Characteristics of 4 nm La-Doped Hafnium Zirconium Oxide Capacitors","authors":"Gwon Kim,&nbsp;Dae Seon Kwon,&nbsp;Gourab De,&nbsp;Hyun-Cheol Kim,&nbsp;Haengha Seo,&nbsp;Laura Nyns,&nbsp;Attilio Belmonte,&nbsp;Jan Van Houdt,&nbsp;Changhwan Shin,&nbsp;Mihaela Ioana Popovici","doi":"10.1021/acsaelm.6c01146","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01146","url":null,"abstract":"<p>While sub-5 nm hafnium zirconium oxide (HZO) films are important for scaled ferroelectric memory devices, stabilizing their ferroelectric characteristics becomes increasingly challenging because the reduced thickness makes phase stabilization highly sensitive to microstructure, stress, and defect chemistry. Here, we evaluate 4 nm La-doped HZO (La:HZO) capacitors using an interfacial engineering strategy combining post-metallization annealing (PMA), ZrO₂ seed layer control, and Nb₂O₅ capping layer. PMA provides a mechanically confined crystallization environment through the presence of the top electrode during annealing. Building upon this confined crystallization environment, the effects of the ZrO₂ seed layer deposition temperature and the introduction of the Nb₂O₅ capping layer on the structural and ferroelectric characteristics of La:HZO were systematically investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), grazing-incidence X-ray diffraction (GIXRD), in-plane XRD, X-ray photoelectron spectroscopy (XPS), and positive-up-negative-down (PUND) measurements. Capacitors incorporating only the ZrO₂ seed layer exhibit weak ferroelectric switching at 3 MV/cm and early electrical breakdown, indicating that oxygen vacancy-related effects strongly limit polarization switching. Introducing a 2 nm Nb₂O₅ capping layer decreases the relative intensity of the low-binding-energy shoulders in the Hf 4f and Zr 3d spectra, consistent with a reduced contribution of oxygen-deficient local environments. PUND measurements further reveal a progressive reduction in the leakage current component during the ‘U’ pulse, which is attributed to the oxygen-donating role of the Nb₂O₅ capping layer, whereas only a weak change is observed during the ‘D’ pulse. This polarity-dependent behavior is consistent with oxygen vacancy compensation near the Nb₂O₅ capping layer during cycling. Among all investigated device configurations, the capacitor incorporating the 250 °C ZrO₂ seed layer and the Nb₂O₅ capping layer exhibits the highest 2<em>P</em>_r,rel. These results indicate that grain evolution, nonswitching current behavior, and the oxygen-related defect environment are correlated with the ferroelectric response of 4 nm La:HZO capacitors and should be considered together when designing the stack.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9320–9332"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Modification of Polyimide with Calcium-Based Hybrid Nanorods for Advanced Dielectrics","authors":"Zongyuan Bai,&nbsp;Zhixin Gao,&nbsp;Zhen Sun,&nbsp;Jin Sun,&nbsp;Weiyi Deng,&nbsp;Yong Yang","doi":"10.1021/acsaelm.6c01744","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01744","url":null,"abstract":"<p>Polymers constitute vital dielectric media for energy-storage capacitors within contemporary electronic and electrical architectures. A persistent bottleneck in engineering high-energy-density polymer dielectrics lies in the concurrent optimization of dielectric constant and breakdown strength, two parameters traditionally bound by a trade-off relationship. In this study, one-dimensional calcium-based hybrid nanorods (denoted Ca-CP nanorods) are fabricated through a simple solution-phase strategy and introduced into polyimide (PI) matrix to synchronously boost the dielectric constant and breakdown strength of PI composites. Benefiting from bulk and interfacial effects, the composites exhibit markedly improved dielectric response, while the rigid nanorods enhance the mechanical strength of the composites and inhibit electrical breakdown channel expansion. Moreover, the positively charged surfaces of Ca-CP nanorods can efficiently capture injected and excited charge carriers, which further elevates the dielectric breakdown strength of the composite. At a Ca-CP loading of 1.5 wt %, the dielectric constant reached 5.08 at 1 kHz, and the characteristic breakdown strength reached 459 MV/m, representing increases of 69.9% and 42.5%, respectively, over pure PI. The composite achieved a maximum measured discharged energy density of 5.21 J/cm³ at 450 MV/m, outperforming most previously reported nanocomposite dielectric polymers. This study underscores the viability of exploiting organic–inorganic hybrid architectures to advance next-generation, high-performance polymer dielectrics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9614–9624"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pulsed Laser Deposition of Piezoelectric Ba0.85Ca0.15Ti0.9Zr0.1O3 Thin Films on Various Electrode/Substrate Combinations","authors":"Marie-Hélène Chambrier,&nbsp;Moustapha Azankoud,&nbsp;Donovan Ledru,&nbsp;Renaud Valois,&nbsp;Guillaume Demily,&nbsp;Freddy Ponchel,&nbsp;Denis Rémiens,&nbsp;Ilham Hamdi Alaoui,&nbsp;Françoise Le Marrec,&nbsp;Abdelilah Lahmar,&nbsp;Nathalie Lemée,&nbsp;Anthony Ferri,&nbsp;Antonio Da Costa,&nbsp;Rachel Desfeux","doi":"10.1021/acsaelm.6c01288","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01288","url":null,"abstract":"<p>Ba_0.85Ca_0.15Ti_0.9Zr_0.1O₃ (BCTZ) lead-free thin films (400 nm thick) with a tetragonal structure were grown by pulsed laser deposition on various bottom electrode/substrate sets. High-resolution X-ray diffraction confirmed heteroepitaxial growth of BCTZ on (001)-oriented SrTiO₃ substrates; in contrast, films fabricated on LaNiO₃, La_0.5Sr_0.5Co₃, SrRuO₃, Pt, and Pt/Ti electrodes (on SrTiO₃, LaAlO₃, Si, and Si/SiO₂ substrates) were found to be highly (001)-preferentially oriented or polycrystalline. Thermodiffraction experiments revealed a change in the thermal expansion coefficient around 100 °C, characteristic of the ferroelectric-to-paraelectric Curie phase transition in BCTZ films. For all studied configurations, BCTZ films on LaNiO₃ electrodes demonstrated superior piezoelectric and ferroelectric properties. The highest macroscopic effective piezoelectric coefficient (<em>d</em>_33eff = 38 pm·V^–1) was achieved for polycrystalline BCTZ films grown on LaNiO₃/Si. However, the nanoscale measurement recorded via atomic force microscopy showed the narrowest distribution of both coercive voltage and electromechanical response for (001)-oriented films on LaNiO₃/SrTiO₃. Using an LaNiO₃ electrode, the contribution of leakage current was significantly reduced, compared to LSCO, achieving 2 <em>P</em>_r ≈ 5.8 μC·cm^–2 under 13 V and 2 <em>V</em>_c ≈ 2.9 V for a BCTZ film grown on LaNiO₃/SrTiO₃. As a result, LaNiO₃ is identified to be the most suitable electrode for enhancing performances of BCTZ thin films. In view of the results, BCTZ/LaNiO₃ was grown on a cost-effective insulating polycrystalline Al₂O₃ substrate, and the obtained piezoelectric results deserve interest.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9344–9360"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic Integration of High-Reflectivity Porous-AlGaN Distributed Bragg Reflectors for Spectral and Directional Control in Blue Resonant-Cavity Light-Emitting Diodes","authors":"Safeer Hussain Rather,&nbsp;Yi-Sin Cheng,&nbsp;Chiung-Hua Wang,&nbsp;Yen Da Chen,&nbsp;Yu-Cheng Kao,&nbsp;Maria Kiran Kocherla,&nbsp;Der-Yuh Lin,&nbsp;Hongta Yang,&nbsp;Chia-Feng Lin","doi":"10.1021/acsaelm.6c01031","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01031","url":null,"abstract":"<p>Cyan-blue resonant-cavity light-emitting diodes (RC-LEDs) have been designed and fabricated to enhance directional emission by using a monolithic porous-AlGaN distributed Bragg reflector (DBR), integrating a 13-spot multiaperture array (20 μm diameter) via nitrogen ion implantation for current confinement. The RC-LED structure incorporates a 25-pair bottom porous-AlGaN DBR and a top TiO₂/SiO₂ dielectric DBR to form a resonant cavity. The RC-LED achieves a 5.41-fold increase in electroluminescence (EL) intensity in the normal direction compared to standard LED structures. Furthermore, the resonant cavity effect significantly narrows the EL emission linewidth from 27.9 to 14.7 nm and reduces the far-field divergence angle from 128° to 62°. The spectral purity and beam directionality were demonstrated in the RC-LEDs with a multiaperture emitting array, making them ideal candidates for short-distance plastic optical fiber communication in artificial intelligence data centers and high-resolution micro-LED displays.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9312–9319"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomically Engineered 2D/Oxide Heterostructure Varistors: Dual-Barrier Tunneling Architecture for Deterministic Nonlinear Switching","authors":"Arash Vaghef-Koodehi,&nbsp;Mahmoud Nikoufard","doi":"10.1021/acsaelm.6c01650","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01650","url":null,"abstract":"<p>Deterministic control of tunneling barriers and quantum confinement is central to improving the repeatability and bias stability of voltage-clamping devices. Here we report a deterministically engineered 2D/oxide dual-barrier tunneling stack in which an 8-layer h-BN barrier and a monolayer MoS₂ quantum well are inserted to realize resonant-tunneling-assisted voltage clamping with improved repeatability. In this work, we investigate a dual-barrier tunneling varistor based on a vertically integrated ZnO/Bi₂O₃–Si O₂/h-BN/MoS₂/Zn₇Sb₂O₁₂ heterostructure, where an 8-monolayer h-BN barrier (2.0 nm) and a monolayer MoS₂ quantum well (0.65 nm) are engineered to promote resonant tunneling near breakdown. The device performance is assessed through combined DFT, self-consistent NEGF–Poisson transport, and FEM electrothermal simulations, together with experimental characterization. The measured semi-logarithmic <em>J</em>–<em>V</em> response exhibits three transport regimes, with a breakdown voltage of <em>V</em>_b = 22.1 V and a peak nonlinearity coefficient of α = 82 ± 3. conditions, as extracted from the self-consistent electrostatic potential and spatially resolved DOS calculations. Monte Carlo analysis over 10,000 virtual devices yields a relative variation of 2.3% in <em>V</em>_b, and cyclic surge testing over 2000 pulses at 2 kA/cm² shows less than 1% drift in breakdown voltage. These results indicate that the proposed 2D/oxide heterostructure provides a reproducible route for bias-stable voltage clamping through resonant-tunneling-assisted conduction.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9572–9587"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}