ACS Applied Electronic Materials最新文献

{"title":"Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe0.9Co0.1O3 Thin Films","authors":"Pamela Machado,&nbsp;Pol Salles,&nbsp;Alexander Frebel,&nbsp;Gabriele De Luca,&nbsp;Eloi Ros,&nbsp;Christian Hagendorf,&nbsp;Ignasi Fina,&nbsp;Joaquim Puigdollers and Mariona Coll*,&nbsp;","doi":"10.1021/acsaelm.4c0153310.1021/acsaelm.4c01533","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01533https://doi.org/10.1021/acsaelm.4c01533","url":null,"abstract":"<p >Photoferroelectric BiFeO₃ (BFO) has attracted renewed interest to be integrated into thin film photovoltaic (PV) devices as a stable, lead-free, and versatile photoabsorber with simplified architecture. While significant efforts have been dedicated toward the exploration of strategies to tailor the properties of this photoabsorber to improve the device performance, efficiencies still remain low. The modification of the BFO interface by the incorporation of transport-selective layers can offer fresh opportunities to modify the properties of the device. Identifying an optical and electrically suitable selective layer while ensuring easy device processing and controlled film properties is challenging. In this work, we determine the influence of incorporating a ZnO layer on the ferroelectric and photoresponse behavior of an epitaxial BiFe_0.9Co_0.1O₃ (BFCO)-based heterostructure. The device is completed with Sn-doped In₂O₃ (ITO) and La_0.7Sr_0.3MnO₃ (LSMO) electrodes. This all-oxide system is stable under ambient conditions and displays robust ferroelectricity. The coupled ferroelectricity–photoresponse measurements demonstrate that the short circuit current can be modulated by ferroelectric polarization in up to 68% under blue monochromatic light. Also, the responsivity of the system with the ZnO-modified interface is larger than that of the system with no ZnO. Complementary band energy alignment studies reveal that the observed increase in the short circuit current density of the device with ZnO is attributed to lower Fermi level energy at the ZnO/BFCO interface compared to the ITO/BFCO interface, which reduces charge recombination. Therefore, this study provides useful insights into the role of the ZnO interface layer in stable BFO-based devices to further explore their viability for potential optoelectronic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8251–8259 8251–8259"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01533","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism and Application of Optical Modulation of Terahertz Waves in a Perovskite Heterojunction","authors":"Wen Li,&nbsp;Hengzhen Cheng,&nbsp;Caiyu Feng,&nbsp;Weiyi Zhou and Bo Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0157810.1021/acsaelm.4c01578","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01578https://doi.org/10.1021/acsaelm.4c01578","url":null,"abstract":"<p >We investigated the mechanism and application of the modulation of terahertz waves using perovskite heterostructures. At the interface between PEDOT:PSS and the perovskite layers under excitation by an external light source, photogenerated carriers transferred from the perovskite layer to the PEDOT:PSS layer, which was accompanied by charge accumulation. A large number of photogenerated carriers scattered terahertz waves, thereby modulating the terahertz signal in the sample. The process of modulation and recovery of the terahertz signal by a perovskite material under external light is analogous to the principle of biological synapses, which are involved in memory and learning in animal brains. This enabled us to develop perovskite-based synaptic devices. The memory properties of perovskite heterojunction materials open up applications of terahertz technology.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8351–8359 8351–8359"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe_0.9Co_0.1O₃ Thin Films.","authors":"Pamela Machado, Pol Salles, Alexander Frebel, Gabriele De Luca, Eloi Ros, Christian Hagendorf, Ignasi Fina, Joaquim Puigdollers, Mariona Coll","doi":"10.1021/acsaelm.4c01533","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01533","url":null,"abstract":"<p><p>Photoferroelectric BiFeO₃ (BFO) has attracted renewed interest to be integrated into thin film photovoltaic (PV) devices as a stable, lead-free, and versatile photoabsorber with simplified architecture. While significant efforts have been dedicated toward the exploration of strategies to tailor the properties of this photoabsorber to improve the device performance, efficiencies still remain low. The modification of the BFO interface by the incorporation of transport-selective layers can offer fresh opportunities to modify the properties of the device. Identifying an optical and electrically suitable selective layer while ensuring easy device processing and controlled film properties is challenging. In this work, we determine the influence of incorporating a ZnO layer on the ferroelectric and photoresponse behavior of an epitaxial BiFe_0.9Co_0.1O₃ (BFCO)-based heterostructure. The device is completed with Sn-doped In₂O₃ (ITO) and La_0.7Sr_0.3MnO₃ (LSMO) electrodes. This all-oxide system is stable under ambient conditions and displays robust ferroelectricity. The coupled ferroelectricity-photoresponse measurements demonstrate that the short circuit current can be modulated by ferroelectric polarization in up to 68% under blue monochromatic light. Also, the responsivity of the system with the ZnO-modified interface is larger than that of the system with no ZnO. Complementary band energy alignment studies reveal that the observed increase in the short circuit current density of the device with ZnO is attributed to lower Fermi level energy at the ZnO/BFCO interface compared to the ITO/BFCO interface, which reduces charge recombination. Therefore, this study provides useful insights into the role of the ZnO interface layer in stable BFO-based devices to further explore their viability for potential optoelectronic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8251-8259"},"PeriodicalIF":4.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11603610/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142764569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Paper-Based Electret Sensor/Actuator Array for Tactile Interaction","authors":"Yunfei Bai,&nbsp;Wenying Qiu,&nbsp;Jing Xing,&nbsp;Ruixi Wang,&nbsp;Dekuan Zhu and Min Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0173710.1021/acsaelm.4c01737","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01737https://doi.org/10.1021/acsaelm.4c01737","url":null,"abstract":"<p >This study proposes a portable, paper-based tactile feedback system interaction device, engineered to serve blind users with an integrated platform for both input and output functionalities. The device comprises six functional units, each measuring 10 × 10 mm, crafted using a sandwiched structure of paper substrate, graphite, and two PLA films via the hot-pressing technique. Utilizing the corona charging method, the PLA electret films exhibit an impressive piezoelectric coefficient peaking at 3578 pC/N, making it highly sensitive for both sensing and actuating. The pressure sensor, used for writing purposes, demonstrates a sensitivity of 1.01 V/N, while the vibration actuator, used for reading, achieves an output force of 60 mN at an applied voltage of 400 V. Notably, both the surface charge density and the performance of the sensor and actuator stabilize post approximately 1000 interactions. Our psychophysical experiments indicate the device has a perceptible threshold voltage as low as 50 V. Subsequent tactile interaction communication tests offer a preliminary validation of the device’s applicability. The proposed tactile interaction device, being flexibly constructed and intrinsically biodegradable, paves the way for cost-effective tactile communication solutions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8497–8506 8497–8506"},"PeriodicalIF":4.3,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Creation of Two-Dimensional Electron Gas at the Heterointerface of CaZrO3/KTaO3 with Tunable Rashba Spin–Orbit Coupling","authors":"Shaojin Qi,&nbsp;Jiexing Liang,&nbsp;Guimei Shi,&nbsp;Yulin Gan,&nbsp;Yuansha Chen*,&nbsp;Yunzhong Chen* and Jirong Sun*,&nbsp;","doi":"10.1021/acsaelm.4c0161810.1021/acsaelm.4c01618","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01618https://doi.org/10.1021/acsaelm.4c01618","url":null,"abstract":"<p >Compared to SrTiO₃-based 3d two-dimensional electron gases (2DEGs), KTaO₃-based 5d 2DEGs have much more exceptional physical properties, such as a higher Curie temperature of spin-polarized 2DEG, higher <i>T</i>_<i>c</i> for the 2DEG at superconducting state, and larger spin–orbit coupling. Herein, the CaZrO₃ (CZO) films were deposited on KTaO₃ (001) substrates at the deposition temperature varied from 700 °C to room temperature, and the conductive CZO/KTO interface was obtained at all deposition temperatures. The conductivity of the CZO/KTO heterointerface exhibits critical dependence on the film thickness, where the critical thickness for conduction increases from 3.2 to 6 nm when decreasing the deposition temperature from 700 °C to room temperature. Moreover, the electric properties of the heterointerface grown at room temperature can be modulated strongly by the light illumination. The strength of the spin–orbit coupling exhibits large relative variation with the carrier density. Under the light illumination, the strength of the spin–orbit coupling increases from ∼3.9 × 10^–12 eV m to the maximum of ∼9 × 10^–12 eV m, with the maximal change of the carrier density of only 3 × 10¹² cm^–2. The present work demonstrates an effective tuning of the special 5d-electron-based 2DEGs by light illumination, showing a feasible way for advanced optoelectronic device application.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8404–8412 8404–8412"},"PeriodicalIF":4.3,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evidencing Dissipation Dilution in Large-Scale Arrays of Single-Layer WSe2 Mechanical Resonators","authors":"Michael Pitts,&nbsp;Matthew Feuer,&nbsp;Anthony K. C. Tan,&nbsp;Alejandro R.-P. Montblanch,&nbsp;James Kerfoot,&nbsp;Evgeny M. Alexeev,&nbsp;Michael Högen,&nbsp;Patrick Hays,&nbsp;Seth A. Tongay,&nbsp;Andrea C. Ferrari,&nbsp;Mete Atatüre and Dhiren M. Kara*,&nbsp;","doi":"10.1021/acsaelm.4c0126110.1021/acsaelm.4c01261","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01261https://doi.org/10.1021/acsaelm.4c01261","url":null,"abstract":"<p >Micromechanical resonators with very low mass are highly desirable for sensing and transduction applications. Layered materials (LMs) can be used to fabricate single- to few-atom thick suspended membranes, representing the ultimate limit to low mass. Transition-metal dichalcogenides (TMDs), such as WSe₂, are particularly compelling because they can host spatially confined excitons in single layer (1L), potentially enabling the creation of nonclassical mechanical states and interconnects between quantum networks and processors. However, these exciting prospects have been tempered by low device yields, invasive methods for detecting resonator motion, and high mechanical damping. Here, we report the creation of mechanical resonators by suspending 1L-WSe₂ across a 90 × 90 array of 2.5-μm diameter holes with <i>a</i> &gt; 75% success rate. We detect the resonator room-temperature (RT) Brownian motion and measure resonator mass to quantify contamination, using below-bandgap laser interferometry. We investigate the relation between frequency, diameter, and mechanical quality factor, which can exceed 1000 in our devices. We find the dependence agrees with the effect of dissipation dilution, highlighting the importance of reducing mechanical mode-bending. Key to this is the large-scale, high-quality arrays that make it possible to access a frequency range that surpasses previous works. Further, the ability to fabricate large numbers of 1L resonators, and the simplicity of probing their motion without electrodes or an underlying reflective substrate, facilitates previously hard-to-reach configurations, such as resonators in phononic crystals or within optical cavities.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"7898–7905 7898–7905"},"PeriodicalIF":4.3,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Integration of Organic Printed Thin-Film Transistor-Based Soft Biosensors for Wearable Applications","authors":"Sanghoon Baek*,&nbsp;Youngmin Jo,&nbsp;Yongwoo Lee,&nbsp;Jimin Kwon* and Sungjune Jung*,&nbsp;","doi":"10.1021/acsaelm.4c0163210.1021/acsaelm.4c01632","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01632https://doi.org/10.1021/acsaelm.4c01632","url":null,"abstract":"<p >Soft sensors that emulate the modulus of human skin have shown significant potential for wearable sensing applications by ensuring robust, conformal contact that enables the acquisition of high-quality signals. Organic thin-film transistor (TFT)-based pixelated soft sensor arrays have been crucial for advanced spatiotemporal signal measurements, thanks to their active-matrix configuration, which minimizes signal crosstalk. Despite these advancements, challenges such as limited sensitivity, high power consumption, and the need for cost-effective, large-area integration technologies persist, hindering their practical application. This paper explores strategies for developing high-performance TFT-based soft sensing arrays. We begin by discussing the design principles for organic TFT-based sensors, offering strategies to enhance sensitivity while reducing power consumption, with a focus on the underlying device physics. We also introduce a method for ultrathin, large-area, high-performance TFT integration using systematic inkjet printing technology. To demonstrate the practical applications of our approach, we present high-performance spatiotemporal measurements of arterial pulse waves using active-matrix pressure and optical sensing arrays. The low-power, high-sensitivity, and large-area integration strategies discussed in this paper are expected to significantly advance organic TFT-based sensors, paving the way for their practical application in healthcare, wearable technology, and environmental monitoring.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"7657–7678 7657–7678"},"PeriodicalIF":4.3,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity","authors":"Mari Hiramatsu,&nbsp;Zhongxu Hu,&nbsp;Sakura Yoshikawa,&nbsp;Zan Yang,&nbsp;Xinyi He,&nbsp;Takayoshi Katase*,&nbsp;Jun-ichi Yamaura,&nbsp;Hajime Sagayama,&nbsp;Terumasa Tadano,&nbsp;Shigenori Ueda,&nbsp;Hidenori Hiramatsu,&nbsp;Hideo Hosono and Toshio Kamiya*,&nbsp;","doi":"10.1021/acsaelm.4c0157210.1021/acsaelm.4c01572","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01572https://doi.org/10.1021/acsaelm.4c01572","url":null,"abstract":"<p >Layered Sn- and Ge-based monochalcogenides have been known as promising semiconductor materials with appropriately narrow band gaps close to those of Si and GaAs. On the other hand, Pb-based ones possess much narrower band gaps and adopt the cubic rock-salt (RS)-type structure under ambient conditions, and their layered structures are considered thermodynamically unstable. We recently succeeded in the stabilization of GeS-type layered structures in lightly Sn-doped PbS by the combination of a high-temperature solid-state reaction with thermal quenching. In this paper, we have comprehensively investigated the relationship between the crystal structures, electronic structures, and also electronic and thermal transport properties of (Pb_1–<i>x</i>Sn_<i>x</i>)S (<i>x</i> = 0–1). It is experimentally confirmed that an equilibrium phase of layered GeS-type Sn-rich (Pb_1–<i>x</i>Sn_<i>x</i>)S is a p-type semiconductor at <i>x</i> ≥ 0.7, whereas n-type conduction is observed at <i>x</i> = 0.5 and 0.6. In contrast, the stabilized nonequilibrium layered phase with 0.2 ≤ <i>x</i> ≤ 0.4 is an n-type semiconductor with the band gaps of 1.18–1.22 eV, and the electron density increases up to 6.4 × 10¹⁷ cm^–3 in (Pb_0.8Sn_0.2)S. Furthermore, the layered nonequilibrium phase exhibits an ultralow room-temperature thermal conductivity of 0.40–0.65 W/(mK), much lower than those of both end members, i.e., GeS-type SnS (<i>x</i> = 1) and RS-type PbS (<i>x</i> = 0). Based on first-principles electron and phonon transport calculations, layered n-type (Pb_0.75Sn_0.25)S potentially shows a high thermoelectric figure of-merit of 0.34 even at 300 K under an optimized electron concentration. The controllability of bipolar carrier polarity in layered (Pb_1–<i>x</i>Sn_<i>x</i>)S alongside the low thermal conductivity is an advantageous characteristic for applications based on p–n homojunctions, such as photovoltaics and thermoelectrics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8339–8350 8339–8350"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Locally Doped Transferred Contacts for WSe2 Transistors","authors":"He-Yu Chen,&nbsp;Jheng-Jie Lin,&nbsp;Sheng-Shong Wong,&nbsp;Zhen-You Lin,&nbsp;Yu-Chiang Hsieh,&nbsp;Kuo-En Chang,&nbsp;Chung-Lin Wu,&nbsp;Kenji Watanabe,&nbsp;Takashi Taniguchi,&nbsp;Tse-Ming Chen and Luke W. Smith*,&nbsp;","doi":"10.1021/acsaelm.4c0157410.1021/acsaelm.4c01574","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01574https://doi.org/10.1021/acsaelm.4c01574","url":null,"abstract":"<p >While two-dimensional (2D) materials have shown great promise for scaling technology nodes beyond the limits of silicon devices, key challenges remain for realizing high-quality and practical 2D field-effect transistors (FETs), including lowering contact resistance, demonstrating device structures with high electrical stability, reducing interface charge trapping, and integrating n- and p-FETs for beyond-complementary metal oxide semiconductor devices. High contact resistance often stems from Schottky contacts and Fermi level pinning and can be reduced by local doping or transferred contacts, respectively. However, these approaches to date have been mutually incompatible. Here, we combine both into a single structure and demonstrate a locally doped, transfer-contact stack containing access regions adjacent to the metal via contacts embedded in hexagonal boron nitride. Doping is applied by oxygen plasma treatment of access regions, while the fully encapsulated WSe₂ channel remains pristine, creating a lateral p⁺–i–p⁺ junction. We demonstrate a reduction in contact resistance by up to &gt;30,000 times with the contact strategy, with a lowest individual contact resistance of ∼3.6 kΩ · μm, limited by the doping density at the contacts. Our results highlight increasing doping in the contact region as being crucial for achieving improved contact resistance in p-type WSe₂ devices. For our FET devices, the geometry of gates, doped access regions, and the channel are all defined by an electron beam lithography giving full and precise control over size and position. The p-FET behavior is strongly enhanced with a high on/off ratio up to 10⁷, but ambipolar characteristics from the intrinsic channel are still retained. Negligible, temperature-independent hysteresis is achieved from <i>T</i> = 10 to 300 K, with only back gate carrier control. High electrical stability is evident in the excellent reproducibility of transfer characteristics between multiple contact sets on a single device and different devices. The doping reduces contact resistance by reducing the Schottky barrier height and width, achieving Ohmic IV characteristics. The doping appears very stable, with negligible degradation of performance, keeping the device for 50 days in atmosphere. This reasonably simple device structure incorporates two important strategies to enhance contact quality, improving p-FET performance and retaining intrinsic channel quality.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8319–8327 8319–8327"},"PeriodicalIF":4.3,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01574","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High-Performance and Flexible Electrothermal Heater with Bending Tolerance from Layer-by-Layer Self-Assembled Graphite Nanoplates and Carbon Black on Paper","authors":"Zhou Bai,&nbsp;Zhijian Li,&nbsp;Huacui Xiang,&nbsp;Xiaohong Jiang,&nbsp;Haiwei Wu,&nbsp;Guodong Liu,&nbsp;Jiajie Liu,&nbsp;Hongwei Zhou and Hanbin Liu*,&nbsp;","doi":"10.1021/acsaelm.4c0160510.1021/acsaelm.4c01605","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01605https://doi.org/10.1021/acsaelm.4c01605","url":null,"abstract":"<p >The flexible electrothermal heaters based on the Joule heating effect have attracted extensive attention in recent years due to their wide range of applications in personal thermal management and wearable devices. However, the fabrication of this kind of flexible heater with high performance but at low cost remains a challenge. Here in this work, a high-performance and flexible electrothermal heater was developed through layer-by-layer self-assembly of graphite nanoplates (GNPs) and carbon black (CB) on paper driven by capillarity. The resistivity of the assembled GNP/CB layer was around 0.02 Ω·cm after dip-coating 10 times. The heater reached a maximum temperature of 197.3 °C with a heating rate of 23 °C s^–1 under a relatively low voltage of 6 V. Importantly, no attenuation of the heating performance was observed under deformation of the device. This flexible electrothermal heater may find versatile applications, including water heating, deicing, wearable devices, and medical treatments.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"6 11","pages":"8384–8393 8384–8393"},"PeriodicalIF":4.3,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}