ACS Applied Electronic Materials最新文献_第2页

Thermal Stable Ceramics-Based Triboelectric Sensor 热稳定陶瓷摩擦电传感器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-30 DOI: 10.1021/acsaelm.5c0022610.1021/acsaelm.5c00226

Bochao Xie*, Yingying Ma, Yee Yan Lim and Zi Sheng Tang*,

{"title":"Thermal Stable Ceramics-Based Triboelectric Sensor","authors":"Bochao Xie*, Yingying Ma, Yee Yan Lim and Zi Sheng Tang*, ","doi":"10.1021/acsaelm.5c0022610.1021/acsaelm.5c00226","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00226https://doi.org/10.1021/acsaelm.5c00226","url":null,"abstract":"Triboelectric sensors have emerged as a promising technology for self-powered sensing and energy harvesting, offering significant advantages in wearable electronics, health monitoring, and aerospace applications. Their ability to convert mechanical stimuli into electrical signals enables efficient battery-free sensor systems. Tantalate Y1/6Yb5/6TaO4 (YYT) ceramics are generally applied in TBCs due to their high toughness and low thermal conductivity, but the electrical properties of YYT remain mainly unexplored. We incorporated yttria-stabilized zirconia (YSZ) to enhance the critical factors of the highest toughness (3.36 MPa m1/2), lowest thermal conductivity (1.51 W m–1 K–1), and electricity performance (118.7 V). Furthermore, the toughening and the low thermal conductivity mechanism of YYT/YSZ composite ceramics were elucidated through observation of their microstructure. Finally, we fabricated a human motion monitoring device with P(VDF-TrFE) to demonstrate the feasibility of sensing. The major contribution of this study lays a functional and conceptual framework for the design of future aerospace sensors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3994–4003 3994–4003"},"PeriodicalIF":4.3,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stretchable, Antifreeze, and Water-Retaining Silk Fibroin-Based Ionic Conductive Hydrogel for Wearable Sensors 可拉伸，防冻，保水的丝素基离子导电水凝胶可穿戴传感器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-30 DOI: 10.1021/acsaelm.5c0049010.1021/acsaelm.5c00490

Jiajun Xiang, Andeng Liu, Yixin Dong, Yangyang Chen, Xuan Liu, Yingjing Luo, Nianfeng Zhang, Tao Chen, Meidan Ye, Yun Yang and Wenxi Guo*,

{"title":"Stretchable, Antifreeze, and Water-Retaining Silk Fibroin-Based Ionic Conductive Hydrogel for Wearable Sensors","authors":"Jiajun Xiang, Andeng Liu, Yixin Dong, Yangyang Chen, Xuan Liu, Yingjing Luo, Nianfeng Zhang, Tao Chen, Meidan Ye, Yun Yang and Wenxi Guo*, ","doi":"10.1021/acsaelm.5c0049010.1021/acsaelm.5c00490","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00490https://doi.org/10.1021/acsaelm.5c00490","url":null,"abstract":"Silk fibroin shows great potential for epidermal electronics and implantable medical devices due to its excellent biocompatibility. However, its practical application as a hydrogel is limited by poor mechanical properties, low water retention, and freezing susceptibility. To address these challenges, we developed a composite ionic conductive hydrogel (SF-PAM) from polyacrylamide and silk fibroin. This material exhibits outstanding mechanical performance with an elongation rate of 1663%, a tensile strength of 0.38 MPa, and a toughness of 12.58 kJ m–2, alongside excellent biocompatibility. Enhanced by lithium ions and sodium carboxylate pyrrolidone, SF-PAM achieves remarkable water retention (90% after 30 days) and antifreeze capabilities (unfrozen at −70 °C). A strain sensor made from SF-PAM demonstrates a wide detection range of 1 to 1200%. Additionally, we integrated this sensor into a smart cart, enabling a wearable electronic skin system that allows precise control through finger movements detected by a smart glove, significantly improving motion monitoring and user experience in wearable technology.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4307–4318 4307–4318"},"PeriodicalIF":4.3,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MWCNT-Enhanced Cs2SnCl6 Perovskite for Improved Charge Transport in a Smartphone-Interfaced UV Photodetector mwcnt增强Cs2SnCl6钙钛矿在智能手机界面紫外光电探测器中的电荷输运改善

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-29 DOI: 10.1021/acsaelm.5c0059410.1021/acsaelm.5c00594

Dipankar Sahoo*, Arnab Kanti Karan and Nabin Baran Manik,

引用次数: 0

Impact of Spontaneous Orientation Polarization in the Emission Layer on the Charge Accumulation and Exciton−Polaron Quenching Properties of Ir-Complex-based Organic Light-Emitting Diodes 发射层自发取向极化对ir基有机发光二极管电荷积累和激子-极化子猝灭性能的影响

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0035510.1021/acsaelm.5c00355

Shotaro Nakano, and , Yutaka Noguchi*,

{"title":"Impact of Spontaneous Orientation Polarization in the Emission Layer on the Charge Accumulation and Exciton−Polaron Quenching Properties of Ir-Complex-based Organic Light-Emitting Diodes","authors":"Shotaro Nakano,  and , Yutaka Noguchi*, ","doi":"10.1021/acsaelm.5c0035510.1021/acsaelm.5c00355","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00355https://doi.org/10.1021/acsaelm.5c00355","url":null,"abstract":"Controlling the charge accumulation properties of organic light-emitting diodes (OLEDs) is crucial for optimizing the device performance. In particular, the charge distribution in the vicinity of the emission layer (EML) affects the device efficiency and lifetime, as it determines the emission zone and exciton−polaron quenching (EPQ) characteristics. This study investigates the impact of spontaneous orientation polarization (SOP) in the EML on the charge accumulation and EPQ characteristics of Ir-complex-based OLEDs using displacement current measurements combined with photoluminescence intensity measurements and device simulations. A significant SOP is induced in the EML depending on the SOP-active material content, which modifies the accumulated charge distribution in the EML. Notably, the SOP can suppress the EPQ, particularly when the energy offset at the interface between the hole transport layer and the EML is small. These findings highlight the importance of SOP in optimizing the OLED device performance.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4182–4190 4182–4190"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Liquid Metal-Filled Polymer Fiber as Wing-Type Inductive Sensors for Deformation and Airflow Sensing 液态金属填充聚合物纤维作为翼型变形和气流感应传感器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0017310.1021/acsaelm.5c00173

Qi Zhang, Nan Li, Cai Cheng, Ju Wang, Yujia Song and Jing Liu*,

{"title":"Liquid Metal-Filled Polymer Fiber as Wing-Type Inductive Sensors for Deformation and Airflow Sensing","authors":"Qi Zhang, Nan Li, Cai Cheng, Ju Wang, Yujia Song and Jing Liu*, ","doi":"10.1021/acsaelm.5c0017310.1021/acsaelm.5c00173","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00173https://doi.org/10.1021/acsaelm.5c00173","url":null,"abstract":"Flexible sensors, as vital components of flexible robots, play significant roles in monitoring the surrounding environment and tracking their own motion states. However, the development of flexible sensors that demonstrate both high sensitivity and reliability while being suitable for integration into actuated parts remains a challenge. In this study, we developed a wing-shaped sensor composed of a hollow fiber polymer structure, into which liquid metal was injected as a flexible conductive material and encapsulated with Ecoflex, which overall presents a cantilever beam structure on both sides. The hollow fiber acts as a natural insulator for the liquid metal coils, while their inner and outer diameters are only 190 and 290 μm, respectively. When both ends of the sensor are deformed by external action, the cantilever beams on both sides will be displaced relative to each other like wings, resulting in a corresponding change in the spatial position of the liquid metal coil, which in turn generates a change in the inductance signal. By leveraging this phenomenon, the wing-type sensor can detect minute displacements at both ends with an accuracy of 5% of their thickness while maintaining excellent stability over 100 cycle tests. This sensor was also able to measure wind speeds in a specific range of 2–10 m/s, with trends that conformed well to both theoretical foundations and simulation results. Further, we have demonstrated several application scenarios for this sensor using this superposition sensing mechanism. Overall, this study elucidates the inductive superposition mechanism of the cantilever beam coils on both sides and offers a strategy for integrating sensing and actuation in flexible robots.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3913–3921 3913–3921"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding 纳米球光刻技术用于极低片阻透明电极、焦耳加热和电磁干扰屏蔽的柔性嵌入式金属网

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0042510.1021/acsaelm.5c00425

Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li and Paul W. Leu*,

{"title":"Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding","authors":"Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li and Paul W. Leu*, ","doi":"10.1021/acsaelm.5c0042510.1021/acsaelm.5c00425","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00425https://doi.org/10.1021/acsaelm.5c00425","url":null,"abstract":"We demonstrate the highest transparent electrode performance among metal meshes fabricated via nanosphere lithography (NSL), achieving an order-of-magnitude improvement in the figure of merit FoM (σDC/σOP). Additionally, we present, for the first time, the application of metal meshes fabricated by NSL for transparent electromagnetic interference (EMI) shielding, enabled by exceptional improvements in sheet resistance. Our NSL method produces substrate-embedded metal meshes in PET and glass by etching trenches, yielding high-aspect-ratio features with low sheet resistance. Embedded structures also exhibit superior robustness during bending and tape tests compared to sputtered metallic films on the surface. As a transparent electrode, the flexible Ag meshes exhibit a sheet resistance of 1.52 Ω/sq and transparency of 73.1% as well as a sheet resistance of 0.22 Ω/sq and transparency of 58.1%, corresponding to FoMs of 737 and 2736, respectively. For transparent EMI shielding, the flexible metal meshes achieve a shielding efficiency (SE) of 34.5 dB with 73.1% visible transmission and an EMI SE of 52.8 dB with 58.1% visible transmission. As a flexible heater, the metal meshes can reach a saturation temperature exceeding 70◦C within 60 s under an applied voltage of 1.2 V. These embedded metal meshes hold promise for applications requiring ultralow sheet resistance, including heated windows and defrosting systems, large-area organic light-emitting diode (OLED) lighting and displays, solar cells, and EMI shielding.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4266–4278 4266–4278"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00425","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI in - poor IGZO：在形成气体退火和PBTI时对氢的优越回弹性

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0038310.1021/acsaelm.5c00383

Anastasiia Kruv*, Michiel J. van Setten, Adrian Chasin, Daisuke Matsubayashi, Hendrik F. W. Dekkers, Alexandru Pavel, Yiqun Wan, Kruti Trivedi, Nouredine Rassoul, Jie Li, Yuchao Jiang, Subhali Subhechha, Geoffrey Pourtois, Attilio Belmonte and Gouri Sankar Kar,

{"title":"In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI","authors":"Anastasiia Kruv*, Michiel J. van Setten, Adrian Chasin, Daisuke Matsubayashi, Hendrik F. W. Dekkers, Alexandru Pavel, Yiqun Wan, Kruti Trivedi, Nouredine Rassoul, Jie Li, Yuchao Jiang, Subhali Subhechha, Geoffrey Pourtois, Attilio Belmonte and Gouri Sankar Kar, ","doi":"10.1021/acsaelm.5c0038310.1021/acsaelm.5c00383","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00383https://doi.org/10.1021/acsaelm.5c00383","url":null,"abstract":"Integrating In–Ga–Zn oxide (IGZO) channel transistors into silicon-based ecosystems requires the resilience of the channel material to hydrogen. Standard In-rich IGZO (In = 40 metal at. %) suffers from degradation under forming gas anneal (FGA) and hydrogen-driven positive bias temperature instability (PBTI). In this paper, we demonstrate scaled, top-gated transistors with an atomic layer deposition (ALD)-deposited In-poor (In ≤ 17 metal atom %) IGZO channel that shows superior resilience to hydrogen compared to those with an In-rich IGZO channel. These devices, fabricated with a 300 mm semiconductor fabrication plant (FAB) process, with dimensions down to WCH × LTG = 80 × 40 nm2, show excellent stability during a 2 h, 420 °C forming gas anneal (0.06 ≤ |ΔVTH| ≤ 0.33 V) and improved resilience to H in PBTI at 125 °C (down to no detectable H-induced VTH shift) compared to In-rich devices. We demonstrate that the mechanism of device degradation by H in the FGA is different from that of the H-induced VTH instability in PBTI. We argue that the first is due to oxygen scavenging by H, and the second, H release from the gate dielectric into the channel. We also show that resilience to H in one process does not automatically translate to resilience to H in the other. This significant improvement in IGZO resilience to H enables the use of FGA treatments during fabrication, needed for silicon technology compatibility, as well as further scaling and 3D integration, bringing IGZO-based technologies closer to mass production.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4210–4219 4210–4219"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Orientation- and Pressure Dependence of the Vibrational Response of a Monolayer Crystal on a Vicinal Diamond Surface 邻近金刚石表面上单层晶体振动响应的取向和压力依赖关系

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0040610.1021/acsaelm.5c00406

Yi Zhao, Lingxiao Zhao, Chengjiang Du, Ruirui Liu, John A. McGuire* and Yanpeng Qi*,

{"title":"Orientation- and Pressure Dependence of the Vibrational Response of a Monolayer Crystal on a Vicinal Diamond Surface","authors":"Yi Zhao, Lingxiao Zhao, Chengjiang Du, Ruirui Liu, John A. McGuire* and Yanpeng Qi*, ","doi":"10.1021/acsaelm.5c0040610.1021/acsaelm.5c00406","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00406https://doi.org/10.1021/acsaelm.5c00406","url":null,"abstract":"We systematically investigate polarization-dependent Raman spectra of a monolayer crystal of WS2 on the (100) and (230) surfaces of a diamond. At ambient pressure, identical polarization dependence of the Raman spectra is observed on the different surfaces, independent of the orientation of the monolayer crystal relative to the diamond crystal. However, when monolayer WS2 is compressed to about 4 GPa, an abrupt drop of the intensity of the 2LA mode relative to the A’ mode occurs on the (100) surface and the (230) surface with the zigzag direction along the atomic step edges of the (230) surface. In contrast, no such drop is observed when the armchair direction is along or at 15° to the atomic steps of the (230) surface. We also observe a shift of the polarization angle of the intensity maxima of the 2LA and A’ modes on the (230) surface during compression. These results demonstrate that the atomic steps of a vicinal surface strongly modify the vibrational response under high pressure.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4259–4265 4259–4265"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-Chip Nanostructuring of Gold Microelectrodes in Phosphate-Buffered Saline for Broadband Single-Cell Impedance Biosensors 宽带单细胞阻抗生物传感器用磷酸缓冲盐水金微电极的片上纳米结构

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0005010.1021/acsaelm.5c00050

Ruben Van den Eeckhoudt*, Nurul Izni Rusli, Barbara Sieira, Susana Garcia Mayo, Sajid Hussain, Vasileios Vangalis, David Seveno, Kevin J. Verstrepen, Jon Ustarroz, Filip Tavernier, Michael Kraft and Irene Taurino,

{"title":"On-Chip Nanostructuring of Gold Microelectrodes in Phosphate-Buffered Saline for Broadband Single-Cell Impedance Biosensors","authors":"Ruben Van den Eeckhoudt*, Nurul Izni Rusli, Barbara Sieira, Susana Garcia Mayo, Sajid Hussain, Vasileios Vangalis, David Seveno, Kevin J. Verstrepen, Jon Ustarroz, Filip Tavernier, Michael Kraft and Irene Taurino, ","doi":"10.1021/acsaelm.5c0005010.1021/acsaelm.5c00050","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00050https://doi.org/10.1021/acsaelm.5c00050","url":null,"abstract":"Impedance-based single-cell sensors are gaining increased interest due to their affordability, potential for miniaturization and label-free nature. However, their sensitivity is restricted due to the electrical double layer effect which prevents accurate assessment of cell properties at low frequencies, e.g., cell size and membrane properties. This effect becomes increasingly problematic when the electrode size is reduced since then the double layer impedance dominates up to higher frequencies. This paper describes an extremely fast (1 s) technique for on-chip nanostructuring of gold microelectrodes that can be used for single cell impedance sensors. The developed technique achieves a 40-fold reduction in double layer impedance at 1 kHz by nanostructuring ready-made gold coplanar microelectrodes on chip without requiring extra fabrication steps. The technique uses only a DC voltage source and a 100× diluted phosphate-buffered saline (PBS) solution, making it cost-effective, nonhazardous, and ideally suited for a batch process. A comparison of single-cell impedance measurements of Saccharomyces cerevisiae yeast using bare and nanostructured microelectrodes shows improved reproducibility and accuracy for frequencies below 100 kHz.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3786–3794 3786–3794"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Half-Oxidized MoS2-Based Memristor by UV-Ozone Treatment 紫外-臭氧处理半氧化二硫化钼基忆阻器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0003110.1021/acsaelm.5c00031

Beomkyu Shin, Jong Yun Kim, Oh Hun Gwon, Seok-Ju Kang, Hye Ryung Byun, Daehyun Ryu, Kyu Yeon Kim and Young-Jun Yu*,

引用次数: 0