ACS Applied Electronic Materials最新文献

{"title":"Observation of Quasi-Saturation Phenomenon in Sidewall Gate GaN Vertical Transistors","authors":"Chih-Kang Chang,&nbsp;, ,&nbsp;Zhi-Xiang Zhang,&nbsp;, ,&nbsp;Ting-Ci Li,&nbsp;, ,&nbsp;Jun-Xiang Wang,&nbsp;, ,&nbsp;Yu-Chuan Chu,&nbsp;, ,&nbsp;Ting-I Wang,&nbsp;, ,&nbsp;Miin-Jang Chen,&nbsp;, ,&nbsp;Tien-Yu Wang,&nbsp;, ,&nbsp;Wei-Chih Lai,&nbsp;, and ,&nbsp;Jian-Jang Huang*,&nbsp;","doi":"10.1021/acsaelm.5c01412","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01412","url":null,"abstract":"<p >We report the observation of quasi-saturation behavior in GaN vertical metal oxide semiconductor field-effect transistors featuring a sidewall-gate architecture. Compared to conventional trench-gate designs, the sidewall-gate structure exhibits pronounced drain current roll-off and negative transconductance under high gate bias. This degradation is consistent with space charge modulation, wherein localized electron accumulation at the gate-drift interface distorts the electric field distribution and limits carrier mobility. Comprehensive electrical characterization and technology computer-aided design simulations reveal how asymmetric gate geometry affects vertical and lateral electron spreading paths. These findings highlight the role for mitigating field-induced current degradation in vertical GaN power devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9030–9036"},"PeriodicalIF":4.7,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01412","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Surface Treatments on the Transport Properties of Germanium 2DHGs","authors":"Nikunj Sangwan,&nbsp;, ,&nbsp;Eric Jutzi,&nbsp;, ,&nbsp;Christian Olsen,&nbsp;, ,&nbsp;Sarah Vogel,&nbsp;, ,&nbsp;Arianna Nigro,&nbsp;, ,&nbsp;Ilaria Zardo,&nbsp;, and ,&nbsp;Andrea Hofmann*,&nbsp;","doi":"10.1021/acsaelm.5c01069","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01069","url":null,"abstract":"<p >Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin–orbit interaction, low effective mass, and the absence of valley degeneracies. However, charge traps cause issues such as gate hysteresis and charge noise. This study examines the effect of surface treatments on the accumulation behavior and transport properties of Ge-based two-dimensional hole gases (2DHGs). Oxygen plasma treatment reduces conduction in a setting without applied top gate voltage, improves the mobility, and lowers the percolation density, while hydrofluoric acid (HF) etching provides no benefit. The results suggest that interface traps from the partially oxidized silicon (Si) cap pin the Fermi level and that oxygen plasma reduces the trap density by fully oxidizing the Si cap. Therefore, optimizing surface treatments is crucial for minimizing the charge traps and thereby enhancing the device’s performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8844–8849"},"PeriodicalIF":4.7,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01069","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Separation and Low-pH Exposure Driven Self-Poled PVDF for Piezoelectric Energy Harvesters and Self-Powered IoT Sensors","authors":"Vaibhav Khurana,&nbsp;, ,&nbsp;Pavan Pujar,&nbsp;, ,&nbsp;Mallikarjuna Korrapati,&nbsp;, ,&nbsp;Jayant Kalra,&nbsp;, and ,&nbsp;Dipti Gupta*,&nbsp;","doi":"10.1021/acsaelm.5c01307","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01307","url":null,"abstract":"<p >Herein, we have solution-processed PVDF films crystallized into a polar β phase via electrostatic interaction with a polar solvent and its controlled demixing in a nonsolvent bath. Subsequently, the self-polarization alignment is ascertained on the treatment of these films in a low-pH aqueous solution. The combined X-ray diffraction, FTIR spectroscopy, and piezoelectric force microscopy (PFM) results revealed electroactive phases and an unseen polarization locking in these films. The out-of-plane cantilever deflection on application of a series of DC bias voltages implies a self-aligned property in these prepared films. The developed piezoelectric generator is shown to generate rms voltage, rms current, and power density of 4 V, 0.16 μA, and 100 μW cm^–3, respectively, on application of a force as low as 1 N. The harvester showed charging of a range of capacitors, with a 10 μF capacitor reaching 1.0 V in less than 100 s. Further, on placing a 2.2 μF capacitor in series with a force-sensitive resistor (FSR) and a known resistor of 470 Ω, the human actuation force sensing in FSR is realized, which is validated with the voltage variation across the known resistor. This energy harvester can expand the use of low-powered IoT devices by enabling self-powered sensing, paving the way for future integration into commercial and smart technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8939–8953"},"PeriodicalIF":4.7,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene-Based Triboelectric Multi-Sensors for Self-Powered Multimodal Motion Sensing in Smart Textiles","authors":"Ismael Domingos,&nbsp;, ,&nbsp;Carolina Antunes,&nbsp;, and ,&nbsp;Helena Alves*,&nbsp;","doi":"10.1021/acsaelm.5c01519","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01519","url":null,"abstract":"<p >The increasing demand for real-time motion tracking in rehabilitation, athletic training, and health monitoring highlights the need for wearable sensors that are accurate, energy-efficient, and comfortable to use. Triboelectric nanogenerators (TENGs) offer a promising route by converting biomechanical activity directly into electrical signals, but their deployment is limited by mechanical instability under deformation and reliance on wired data acquisition. Here, we present a fully integrated, wireless triboelectric sensing system built on a durable textile architecture. The system employs six PDMS-based sensors enhanced with graphene nanoplatelet (GNP) conductive adhesives and connected through a miniaturized Bluetooth Low Energy (BLE) module for multichannel, real-time transmission. Among the tested formulations, a 20 wt % GNP composite achieved optimal conductivity (∼15 Ω/□) and stable signal output under repeated loading. The integrated system demonstrated voltage outputs up to 37 V during benchtop testing and maintained stability across a wide temperature range (10–50 °C). By combining scalable materials, robust sensor design, and low-power wireless communication, this work establishes a practical platform for self-powered, high-fidelity biomechanical monitoring. The proposed approach advances the pathway toward next-generation wearable systems for clinical rehabilitation and everyday health applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9136–9145"},"PeriodicalIF":4.7,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Back in the Spotlight: Metal Oxide-Based Electrospun PVDF Nanocomposites for TENGs","authors":"Hema Malini Venkatesan,&nbsp; and ,&nbsp;Anand Prabu Arun*,&nbsp;","doi":"10.1021/acsaelm.5c01201","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01201","url":null,"abstract":"<p >In recent years, the fabrication of triboelectric nanogenerators (TENGs) for energy-harvesting applications has seen a resurgence, particularly through the integration of metal oxide (MO)-based polymer nanocomposites (NCs). TENGs operate on the principles of electrostatic induction and triboelectrification to transform mechanical energy into electricity. Material selection plays an important role in optimizing TENG performance with polymers, metals, MOs, and other fillers commonly employed in triboelectric frictional layers. Ferroelectric materials such as poly(vinylidene fluoride) (PVDF) serve as frequently used host matrices for incorporating various organic and inorganic dopants. MOs act as effective dopants in the organic polymer matrix, significantly enhancing the dielectric properties, charge trapping, and mechanical strength, which are the key attributes for a high-performance triboelectric frictional layer. However, challenges such as low surface charge density and limited power conversion efficiency hinder their broader application in real-time energy harvesting. Electrospinning techniques address these issues by enabling the fabrication of one dimentional polymer NCs with enhanced surface area, mechanical flexibility, hydrophobicity, and functional integration. These features position TENGs as promising solutions for diverse energy management. This review highlights the material versatility, analyzing techniques, and strategic utilization of MO-based PVDF NCs in triboelectric frictional layers, spotlighting its transformative role in revolutionizing TENG performance and enabling next-generation energy solutions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8691–8731"},"PeriodicalIF":4.7,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Mechanical Properties and Microstructural Evolution of Copper Pillar in Through Glass Vias under Different Temperatures","authors":"Miao Wang,&nbsp;, ,&nbsp;Jihua Zhang*,&nbsp;, ,&nbsp;Libin Gao,&nbsp;, ,&nbsp;Hongwei Chen,&nbsp;, ,&nbsp;Wenbo Luo,&nbsp;, ,&nbsp;Wenlei Li,&nbsp;, ,&nbsp;Xiaoshen Han,&nbsp;, ,&nbsp;Dongbin Wang,&nbsp;, ,&nbsp;Shuang Li,&nbsp;, ,&nbsp;Ting Liu,&nbsp;, ,&nbsp;Xingzhou Cai,&nbsp;, ,&nbsp;Yong Li,&nbsp;, ,&nbsp;Bin Peng,&nbsp;, and ,&nbsp;Wanli Zhang,&nbsp;","doi":"10.1021/acsaelm.5c01336","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01336","url":null,"abstract":"<p >In the engineering applications of 3D chip packaging, postelectroplating heat treatment of through glass via (TGV) substrates is a standard procedure for controlling residual stress within the copper overburden film. The specific thermal conditions employed significantly influence the microstructural evolution and resultant mechanical behavior of the interconnect copper pillars. This study systematically investigates the effects of heat treatment temperature on the microstructural evolution, resistivity, and elastoplastic constitutive behavior of copper pillars. Electron backscatter diffraction (EBSD) analysis reveals that increasing the heat treatment temperature progressively refines the average grain size of copper pillars from 3.31 μm down to 2.86 μm, with a particularly pronounced grain refinement effect observed at the copper/glass interface. Furthermore, nanoinfrared spectroscopy analysis attributes the significantly higher measured resistivity, compared to theoretical predictions, to the presence of residual levelers entrapped within the copper pillars. The elastoplastic constitutive equation parameters of the copper pillar were obtained by integrating nanoindentation testing with finite element analysis (FEA). The results demonstrate that grain refinement, driven by higher temperatures, enhances the yield strength of copper pillars, culminating in a maximum value of 223.28 MPa. Notably, the substrate warpage was minimized to 0.2 μm following a 373.15 K heat treatment. Consequently, this research not only presents an effective strategy for tailoring the copper pillar microstructure but also provides a portfolio of heat treatment options, enabling a balanced optimization between the substrate’s manufacturability and the mechanical performance of the copper pillars.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8954–8968"},"PeriodicalIF":4.7,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning Terahertz Emission via Interfacial Perpendicular Magnetic Anisotropy in Co/Gd/Co Spintronic Heterostructures","authors":"Hongtao Dai,&nbsp;, ,&nbsp;Yuqing Zou,&nbsp;, ,&nbsp;Shanshan Hu,&nbsp;, ,&nbsp;Jingying Zhang,&nbsp;, ,&nbsp;Yiwen Song,&nbsp;, ,&nbsp;Ziyang Li,&nbsp;, ,&nbsp;Jiali Zhang,&nbsp;, ,&nbsp;Yuna Song,&nbsp;, ,&nbsp;Xiaorui Ma,&nbsp;, ,&nbsp;Qingyuan Jin,&nbsp;, ,&nbsp;Yaowen Liu,&nbsp;, and ,&nbsp;Zongzhi Zhang*,&nbsp;","doi":"10.1021/acsaelm.5c01635","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01635","url":null,"abstract":"<p >Spintronic terahertz (THz) emitters based on the inverse spin Hall effect (ISHE) are promising for ultrafast optoelectronic applications due to their high emission intensity and tunability. Among them, rare-earth (RE)–transition-metal (TM) ferrimagnetic systems stand out for their high thermal stability, robustness to magnetic interference, and ease of magnetization control. However, the nonmonotonic THz emission behavior observed with varying RE content or measurement temperature remains controversial. In this study, we systematically explore THz emission in Co/Gd/Co heterostructures with an engineered interfacial perpendicular magnetic anisotropy (PMA). By inserting an ultrathin Gd spacer layer (0.3–0.7 nm) between ferromagnetic Co layers, we observe a pronounced suppression in THz signal amplitude─mimicking the behavior of nearly compensated RE–TM alloys. Through a combined thickness-dependent analysis of Co and Gd layers, we attribute this suppression to strong interfacial PMA at the Co/Gd interface, which reduces the in-plane magnetization component necessary for efficient spin-to-charge conversion via the ISHE. Our results not only clarify the underlying mechanism responsible for THz emission minima in RE–TM systems but also highlight interfacial PMA as a key tuning parameter for optimizing spintronic THz emitter performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9219–9226"},"PeriodicalIF":4.7,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radio-Frequency Detection of Fabry–Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2 Nanowires","authors":"Sung Jin An,&nbsp;, ,&nbsp;Jisu Kim,&nbsp;, ,&nbsp;Myung-Chul Jung,&nbsp;, ,&nbsp;Kidong Park,&nbsp;, ,&nbsp;Jeunghee Park,&nbsp;, ,&nbsp;Seung-Bo Shim,&nbsp;, ,&nbsp;Hakseong Kim,&nbsp;, ,&nbsp;Zhuo Bin Siu,&nbsp;, ,&nbsp;Mansoor B. A. Jalil,&nbsp;, ,&nbsp;Christian Schönenberger,&nbsp;, ,&nbsp;Nojoon Myoung*,&nbsp;, ,&nbsp;Jungpil Seo*,&nbsp;, and ,&nbsp;Minkyung Jung*,&nbsp;","doi":"10.1021/acsaelm.5c01596","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01596","url":null,"abstract":"<p >We demonstrate phase-coherent transport in suspended long-channel Cd₃As₂ nanowire devices using both direct current (DC) transport and radiofrequency (RF) reflectometry measurements. By integrating Cd₃As₂ nanowires with on-chip superconducting LC resonators, we achieve sensitive detection of both resistance and quantum capacitance variations. In a long-channel device (<i>L</i> ≈ 1.8 μm), clear Fabry–Pérot (FP) interference patterns are observed in both DC and RF measurements, providing strong evidence for ballistic electron transport. RF reflectometry reveals gate-dependent modulations of the resonance frequency arising from quantum capacitance oscillations induced by changes in the density of states and FP interference. These oscillations exhibit a quasi-periodic structure that closely correlates with the FP patterns in DC transport measurements. In another device of a Cd₃As₂ nanowire Josephson junction (<i>L</i> ≈ 730 nm, superconducting Al contacts), FP interference patterns are too weak to be resolved in DC conductance but are detectable using RF reflectometry. These results demonstrate the high quality of our Cd₃As₂ nanowires and the versatility of RF reflectometry, establishing their potential for applications in topological quantum devices such as Andreev qubits or gatemon architectures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9195–9203"},"PeriodicalIF":4.7,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Transfer-Bonding Approach toward High-Yield, Large-Area Micro Light-Emitting Diode Integration","authors":"Hyunggu Kim,&nbsp;, ,&nbsp;Junhyeock Kim,&nbsp;, ,&nbsp;Yu Gyeong Han,&nbsp;, ,&nbsp;Jun-Beom Park,&nbsp;, ,&nbsp;Sanghoon Han,&nbsp;, ,&nbsp;Jun-Seok Ha,&nbsp;, ,&nbsp;Chan Il Park,&nbsp;, ,&nbsp;Tak Jeong*,&nbsp;, and ,&nbsp;Chang-Mo Kang*,&nbsp;","doi":"10.1021/acsaelm.5c01440","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01440","url":null,"abstract":"<p >Conventional mass-transfer techniques for micro-LED display fabrication typically involve at least three sequential transfer steps to integrate micro-LED chips into the final driving circuitry. However, as chip sizes continue to decrease, the risk of mechanical damage during each transfer step increases─making even a single transfer step potentially detrimental to device integrity. To overcome this limitation, we introduce a direct transfer-bonding approach that eliminates the need for temporary substrates and intermediate transfer stages. Our strategy simplifies processing, enhances yield, and reduces manufacturing costs. Through experimental validation and finite element analysis, we developed an optimized transfer architecture for laser lift-off conditions and bump structures. Under optimal parameters─a bump height of 6 μm and 30% laser power─the process achieved a maximum transfer yield of 94.3%, demonstrating the feasibility of high-precision and high-reliability integration. This strategy offers a scalable and cost-effective solution for the mass production of micro-LED displays.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9106–9115"},"PeriodicalIF":4.7,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Polydimethylsiloxane-Embedded Polymer Optical Fiber Tactile Sensors: A Comprehensive Experimental Analysis of the Sensitive Region and Embedding Substrate Parameters","authors":"Looh Augustine Ngiejungbwen,&nbsp;, ,&nbsp;Hind Hamdaoui,&nbsp;, ,&nbsp;Looh George Ashwehmbom,&nbsp;, and ,&nbsp;Ming-Yang Chen*,&nbsp;","doi":"10.1021/acsaelm.5c01477","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01477","url":null,"abstract":"<p >Polymer optical fibers (POFs) are ideal for tactile sensing due to their flexibility, durability, and ease of integration. Optimizing POF-based sensors requires precise control of design parameters, such as polydimethylsiloxane (PDMS) mixing ratio, sensitive region length (SRL), sensitive region depth (SRD), Sanding Grit Size (SGS), and embedding depth. These parameters significantly affect linearity, sensitivity, and hysteresis, which are crucial for accurate tactile measurements. This study presents a comprehensive analysis of the interplay between these design parameters and their impact on sensor performance. A sensing pad was fabricated for each set of experiments by embedding POF in PDMS, with a cutout-sensitive region produced using the Targeted Precision Mold-Guided Abrasive Profiling fabrication method for accurate and reproducible sensitive region parameters. In the presence of applied force, surface scattering loss increases, significantly amplifying the sensor’s output signal. Experimental results show strong correlations between design parameters and performance metrics modeled with first- or second-order polynomials. Using the NSGA-II multiobjective optimization algorithm, the exact optimal parameters were determined as a PDMS mixing ratio of 100:10, SRL of 15 mm, SRD of 0.66 mm, SGS of 320 Cw, and an embedding depth of 4.34 mm. This optimized configuration achieved high linearity (<i>R</i>² ≈ 0.9938), high sensitivity (78.25 mV/N), and low hysteresis (1%) across the force range (0–26 N). Performance remained stable within the optimal range (0–16 N), with slight degradation at higher forces due to strain saturation. While strain saturation limits performance beyond 16 N, this range suffices for most tactile sensing applications. This work provides valuable insights for optimizing tactile sensors with applications in robotics, healthcare, and industrial automation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9090–9105"},"PeriodicalIF":4.7,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}