ACS Applied Electronic Materials最新文献

{"title":"Rheology-Engineered Non-Aqueous Si3N4/Si Slurries for High-Performance Ceramic Substrates with Enhanced Thermal Management Capability","authors":"Mingming Luo,&nbsp;Yusen Duan,&nbsp;Zhaohua Luo,&nbsp;Jiayu Yang,&nbsp;Xuhao Li,&nbsp;Jingxian Zhang","doi":"10.1021/acsaelm.6c01321","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01321","url":null,"abstract":"<p>Thin, thermally conductive Si₃N₄ ceramic substrates are promising candidates for electronic packaging applications, but their fabrication requires precise control of slurry dispersion, rheological behavior, and green-tape uniformity to minimize processing defects. In this work, a non-aqueous Si₃N₄/Si reactive slurry system is optimized via rheology control for tape casting and reaction bonding. The effects of dispersant type, content, and solid loading on slurry flow behavior and green tape quality are systematically investigated. Dispersant 421 provides the most favorable rheological and dispersion behavior, enabling uniform tape casting at 41 vol % solid loading. The optimized slurry yields green tapes with high thickness uniformity (RSD 0.46%) and homogeneous particle packing. After nitridation and gas-pressure sintering, dense Si₃N₄ ceramic substrates with a thickness of 0.25 mm are obtained, exhibiting a flexural strength of 815 ± 27 MPa and a thermal conductivity of 81.84 ± 0.64 W/(m·K). The resulting ceramics show a dense microstructure with noticeable translucency, suggesting good structural uniformity. These results establish rheological control as a practical approach for fabricating thin Si₃N₄ substrates for electronic thermal management.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9361–9368"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning Computer-Aided Design of Electronic Devices and Circuits","authors":"Paolo Lugli,&nbsp;Damiano Marian,&nbsp;Alejandro Toral-Lopez,&nbsp;Francesco Pieri,&nbsp;Gianluca Fiori","doi":"10.1021/acsaelm.6c01066","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01066","url":null,"abstract":"<p>Driven by the miniaturization of single components, which has reached few nanometers, chips can nowadays accommodate hundreds of billions of transistors. As a result, modern nanoelectronics devices and systems are becoming extremely complex. To remain truly effective, computer-aided design (CAD) tools must evolve in parallel with these advancements, keeping pace with the increasing demands of scale and functionality. In recent years, machine learning (ML) has seen an incredible development in several areas. In nanoelectronics, ML is already offering promising technological solutions that improve performance and provide predictions across the entire electronic design stack. From material properties to quantum transport and circuit behavior, ML techniques are making simulation workflows much more efficient and flexible, leading to a new paradigm of CAD: Machine Learning Computer-Aided Design. This review examines the latest developments in computer simulations for assessing the performance of electronic systems and the types of models used across the different levels of abstraction. We also discuss the challenges that still need to be addressed, especially the need for physics-based ML models, and explore future directions toward generative machine learning frameworks tailored specifically for electronic system design.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9189–9199"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductive Yarns with Core-Yarn-Count-Controlled Performance for Intelligent Fall Detection Systems","authors":"Yusheng Shi,&nbsp;Wanlin Liu,&nbsp;Yaning Shi,&nbsp;Peijun Zou,&nbsp;Lei Wang,&nbsp;Jungang Jiang,&nbsp;Yifan Zhang","doi":"10.1021/acsaelm.6c01660","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01660","url":null,"abstract":"<p>In an era of rapid advancements in wearable monitoring systems, the development of high-performance yarn sensors is of great importance for smart textile applications. In this study, the influence of core-yarn diameter on the mechanical and sensing performance of wrapped-yarn sensors was systematically investigated. A viscoelastic model incorporating a Newtonian viscous element was established to describe the mechanical response and interfacial interaction within the wrapped-yarn structure. Experimental results demonstrate that reducing the core-yarn diameter decreases the viscous resistance associated with interfacial friction and improves the deformation responsiveness of the sensor. The optimized yarn sensor exhibits a sensitivity coefficient of 0.2 over a strain range of 0–100% and maintains a stable resistance response during repeated deformation. After 1000 consecutive loading–unloading cycles at 30% strain, the sensor retained a stable electrical response without significant signal attenuation. Furthermore, the optimized sensor was integrated into a knee brace to monitor dynamic knee-joint movements, and distinct resistance responses were obtained during walking, stair climbing, and simulated falling. These results demonstrate the potential of core-yarn structural regulation for improving the mechanical and sensing performance of flexible yarn sensors and provide a feasible approach for wearable knee-motion monitoring and fall-related motion assessment.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9562–9571"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring Optoelectronic Properties of Optical Hybrid Materials via Print-Enabled Doping","authors":"Nishat Paul,&nbsp;Ahasun Habib Hridoy,&nbsp;Xinyi Wang,&nbsp;Juan Pablo Perez Salas,&nbsp;Radvilas Abrasonis,&nbsp;Jayden Yeo,&nbsp;Qingsheng Wang,&nbsp;Shoufeng Lan,&nbsp;Minxiang Zeng","doi":"10.1021/acsaelm.6c01626","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01626","url":null,"abstract":"<p>While the optoelectronic properties of polymers can be tuned through doping and nanomaterials incorporation, conventional sample-by-sample synthesis is often time-consuming and limits efficient exploration of fundamental structure–property relations due to the vast material space. Here, we show the feasibility of using a direct-ink-writing-based combinatorial printing approach as a printing-enabled doping tool for fabricating PANI films with continuously varying doping states and nanofillers. A continuous protonation-state gradient was first printed through pH-mediated deprotonation of polyaniline emeraldine salt (PANI-ES). The printed film exhibited a gradual color transition from deep green to dark navy, while spatially resolved spectroscopic analysis verified the corresponding variation in the protonation state across the film. This deprotonation was further correlated with an increase in the estimated direct optical band gap from 2.14 to 2.41 eV, as determined from separately prepared PANI samples at different pH values. In addition, an organic/inorganic compositional gradient was printed by varying the selenium nanowire (Se NW) content, producing a dark-green-to-reddish color transition, and elemental analysis verified the increase in Se percentage across the film. As a proof of concept, we fabricated in-plane photodetectors from individually prepared pristine PANI and PANI/Se NW hybrid films that each had a uniform composition but contained different Se NW loadings. Their optoelectronic response varied nonmonotonically with Se NW content, reaching a maximum at 20 wt % Se NW. Compared with pristine PANI, the 20 wt % Se NW devices achieved an approximately two-fold higher normalized photoresponse, along with increases in responsivity and specific detectivity of approximately 84% and 95%, respectively. This work indicates the potential of printing-enabled doping for efficient structure–property studies and optoelectronic materials design.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9524–9533"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Device Geometry and Structural Ordering Enable Faster Infrared Photodetection with Selenium–Iodine","authors":"Biman Jana","doi":"10.1021/acsaelm.6c01552","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01552","url":null,"abstract":"<p>The optoelectronic performance of amorphous and partially crystalline semiconductors is strongly governed by device designs and structural disorder, yet studying them in detail to optimize device photo response is challenging. Here, we show that the solid-state optoelectronic response of selenium–iodine (Se–I₂) is dictated by obtaining appropriate device geometry and its transformation from a metastable glassy phase into an ordered lamellar structure. Vertically resolved transport measurements reveal pronounced depth-dependent electrical conductivity within Se–I₂ films. Immediately after solidification, the glassy Se–I₂ network exhibits sluggish carrier transport and persistent photoconductivity. Upon prolonged aging, accompanied by increased structural ordering, the material exhibits enhanced charge transport and millisecond-scale infrared photodetection, with a response time of 4.3 ms. Although the detector was tested under optical modulation frequencies up to 8 kHz, its measured 3–dB bandwidth was 365 Hz. The device also exhibits shot-noise-limited detectivities of ∼10⁸ Jones at 1550 nm and ∼10¹¹ Jones in the visible wavelengths. Spatial photocurrent mapping demonstrates highly uniform carrier collection despite the self-assembled lamellar morphology, while infrared thermal imaging confirms practical imaging capability over a broad temperature range. These results highlight the importance of device geometry and aging-induced structural ordering in optimizing the photo response time for improving response time in selenium-iodine-based semiconductors and identify Se–I₂ as a platform for infrared photodetection and thermal imaging.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9449–9458"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Remote Charge Modulation in WSe2 Transistors via Plasma-Induced Charged Defects in hBN","authors":"Seongmin Ko,&nbsp;Sunggyu Ryoo,&nbsp;Juntae Jang,&nbsp;Jaeyong Woo,&nbsp;Donguk Kim,&nbsp;Hyunseo Hong,&nbsp;Jaehyoung Park,&nbsp;Jongeun Yoo,&nbsp;Heeyeon Lee,&nbsp;Young Duck Kim,&nbsp;Kyungjune Cho,&nbsp;Takhee Lee","doi":"10.1021/acsaelm.6c01634","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01634","url":null,"abstract":"<p>Noninvasive carrier-density modulation is essential for two-dimensional (2D) electronics, where conventional doping often introduces lattice disorder or charged scattering centers near the transport channel. Remote doping offers a route to suppress charged impurity scattering, but commonly requires an additional charge-supply layer separated from the channel by a passive spacer. Here, we demonstrate oxygen-plasma-engineered hexagonal boron nitride (hBN) as both a protective spacer and an electrostatically active remote dopant for tungsten diselenide (WSe₂) field-effect transistors (FETs). Oxygen plasma treatment generates donor-like defect states near the hBN surface, enabling n-type modulation of the underlying WSe₂ channel while preserving spatial separation between the charged defect states and the transport channel. The plasma-treated hBN exhibits clear electrostatic and optical signatures of defect-state formation, and the WSe₂ channel remains structurally intact after treatment. The resulting WSe₂ FETs show controllable n-type doping, with the doping density increasing nearly linearly with plasma-treatment time. Moreover, the increased carrier density is accompanied by enhanced mobility without an increase in the charged impurity density, indicating remote charge modulation with suppressed charged impurity scattering. This defect-engineered hBN platform provides a simple and noninvasive strategy for carrier-density engineering in 2D electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9554–9561"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Dual-Mode Mechanoluminescent–Triboelectric Sensing Based on a PDMS/ZnS:Cu/SDS@PZT Composite","authors":"Zhe Zhang,&nbsp;Minghui Chen,&nbsp;Wenliang Feng,&nbsp;Tengfei Lin,&nbsp;Fang Wang","doi":"10.1021/acsaelm.6c01739","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01739","url":null,"abstract":"<p>Flexible dual-mode sensors that provide synchronized optical and electrical outputs offer a promising platform for self-powered sensing and human–machine interaction. Here, we developed a composite of polydimethylsiloxane (PDMS), copper-doped zinc sulfide (ZnS:Cu), lead zirconate titanate (PZT), and sodium dodecyl sulfate (SDS) that integrates mechanoluminescent feedback and triboelectric signal generation within a flexible active layer. SDS modification promoted a more uniform dispersion of PZT particles in the PDMS matrix, contributing to improved electrical output relative to the corresponding unmodified-PZT composites. Among the tested formulations, the PZSP-3 device achieved a maximum open-circuit voltage of 90.9 V and a transferred charge of 38.0 nC at a 4 mm contact–separation distance. During a 3000 s test at 5 Hz, the current increased initially and showed no sustained decrease under the specified conditions. In a separate single-electrode configuration, handwritten trajectories produced visible mechanoluminescent feedback together with distinguishable pattern-dependent electrical signals. The capacitor tests showed energy storage on the microjoule scale. These results demonstrate an interfacial-engineering strategy for combining mechanical flexibility, enhanced triboelectric performance, and intuitive optical–electrical visualization, and suggest potential for self-powered human–machine interfaces under the tested conditions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9625–9637"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Thermal-Budget High-Mobility In2O3 Thin-Film Transistors Enabled by an In Situ Multifunctional Protection Layer","authors":"Sunghwan Park,&nbsp;Hwa Young Kim,&nbsp;Tae Hwan Boo,&nbsp;Hunbeom Shin,&nbsp;Seonghyun Kim,&nbsp;Seungbum Hong,&nbsp;Sang-Hee Ko Park","doi":"10.1021/acsaelm.6c01911","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01911","url":null,"abstract":"<p>While atomic layer deposition (ALD)-grown In₂O₃ thin-film transistors (TFTs) hold great promise for next-generation electronics, the performance and reliability of highly desirable top-gate configurations are often limited by interfacial degradation caused by photolithography chemicals and plasma exposure during device fabrication. Here, a multifunctional protection layer (PL) strategy is demonstrated that simultaneously suppresses chemical and plasma-induced interfacial damage while enabling controlled hydrogen incorporation. The introduction of an in situ plasma-free thermal ALD Al₂O₃ (T-Al₂O₃) layer directly onto the In₂O₃ channel, a robust physical barrier against chemical and plasma damage is established while simultaneously serving as a hydrogen reservoir. Crucially, inserting this T-Al₂O₃ layer allows for the precise tailoring of hydrogen incorporation by modulating the ALD cycles. The incorporated hydrogen effectively passivates interfacial defects, such as oxygen vacancies (<em>V</em>_O) and oxygen interstitials (<em>O</em>_i), while optimizing the carrier concentration. Consequently, the optimized top-gate TFTs deliver an exceptionally high field-effect mobility of 66.7 cm²/V·s, hysteresis-free operation, and outstanding operational stability, with a positive bias temperature stress (PBTS)-induced <em>V</em>_on shift of only 0.26 V and excellent resistance to negative-bias illumination stress (NBIS). Notably, these outstanding characteristics are achieved through a completely thermal annealing-free process. These results establish a powerful platform for simultaneous chemical and plasma damage suppression and hydrogen engineering in oxide semiconductor devices, enabling substantial improvements in both electrical performance and operational reliability.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9720–9732"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Eumelanin as a Versatile Platform for Soft and Biointegrated Technologies","authors":"Natan L. Nozella,&nbsp;João V. M. Lima,&nbsp;Nayrim B. Guerra,&nbsp;Vitor Pereira,&nbsp;Carlos F. O. Graeff,&nbsp;João V. Paulin","doi":"10.1021/acsaelm.6c01688","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01688","url":null,"abstract":"<p>Eumelanin has evolved from a biologically intriguing pigment into a functional material of growing interest for sustainable and biointegrated electronics. What makes eumelanin stand out is its rare combination of properties, including water-dependent ionic-electronic charge transport, redox activity, biocompatibility, and susceptibility to degradation. These features make it a hydration-programmable material capable of offering distinctive value instead of being a replacement for high-conductivity electronics. By linking chemistry and supramolecular hierarchy to transport, processing, and mechanics for sensors, transistors, soft energy devices, and biointerfaces, this review seeks to show how eumelanin can guide more sustainable material choices while creating opportunities for innovation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9280–9304"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emergent Conductance Plateaus at Room Temperature in PET-Metal Fiber-Based Yarns","authors":"Akash Kumar,&nbsp;Sourav Kundu,&nbsp;Siddhartha Lal,&nbsp;Nandan Kumar,&nbsp;C. K. Suman,&nbsp;Satish Singh,&nbsp;Suraj P. Khanna","doi":"10.1021/acsaelm.6c01534","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01534","url":null,"abstract":"<p>Quantized conductance is conventionally associated with nanoscale constrictions supporting a small number of channels with transmission probabilities approaching unity. Here, an industrially produced polyethylene terephthalate−stainless-steel (PET−SS) memristive yarn, without lithographically defined nanoscale constrictions, exhibits discrete conductance-state evolution during voltage sweeps at room temperature under ambient conditions. Across repeated voltage sweeps, the rolling standard deviation (SD) of resistance exhibits recurrent minima near several integer values of <em>G</em>/<em>G</em>₀ (where <em>G</em>₀ = 2<em>e</em>²/<em>h</em>), supporting an interpretation in terms of confined few-channel transport. The results suggest electrically driven formation of a confined high-transmission constriction within local SS−PET−SS microjunctions. A phenomenological Green’s-function model further illustrates that progressive activation of a limited number of effective transport pathways within a confined junction can produce discrete current evolution. When the device is first cooled to 77 K and subsequently electrically biased, memristive switching and discrete conductance changes remain observable, whereas the room-temperature integer-centered rolling-SD signature is absent. At room temperature, an adaptive SD-based protocol enables selected low-variability conductance states to be captured and retained from several minutes to several hours; a captured state with a mean conductance of 2.036<em>G</em>₀ exhibits a relative SD of approximately 0.13% over 60,000 measurements. These results demonstrate that low-variability, integer-centered conductance states can emerge and be retained within a centimeter-scale, macroscopically disordered, non-conjugated polymer−metal system under ambient conditions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9439–9448"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}