ACS Applied Electronic Materials最新文献

{"title":"High-Entropy Composition Design for Achieving Excellent Energy Storage Performance in (Bi0.5Na0.5)0.94Ba0.06TiO3-Based Ceramics","authors":"Yiwen Niu,&nbsp;Fan Zhang*,&nbsp;Zhiqiang Zhang,&nbsp;Meiyue Li,&nbsp;Jihang Liu and Zhan Jie Wang,&nbsp;","doi":"10.1021/acsaelm.5c0015310.1021/acsaelm.5c00153","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00153https://doi.org/10.1021/acsaelm.5c00153","url":null,"abstract":"<p >Lead-free dielectric capacitors display a huge potential in pulsed power energy storage systems. However, how to realize superior recoverable energy storage density (<i>W</i>_rec) and efficiency (η) in dielectric materials remains a major challenge. Herein, a high-entropy strategy based on (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ with a morphotropic phase boundary composition is developed to gain superior comprehensive energy storage characteristics. The energy storage capabilities are significantly regulated by high-entropy composition design, which induces the destruction of long-range ferroelectric ordering, inhibition of grain growth, optimization of relaxation behavior, increase in resistivity, and widening of band gap, promoting the improvement of polarization difference and electric breakdown strength (<i>E</i>_b). Ultimately, excellent <i>W</i>_rec (∼7.57 J/cm³) and η (81.8%) under a great <i>E</i>_b ∼ 572 kV/cm are realized in the 0.9[((Bi_0.5Na_0.5)_0.94Ba_0.06)_0.65(Ca_0.5Sr_0.5)_0.35]TiO₃-0.1(Bi_0.9Nd_0.1)(Mg_0.5Zr_0.5)O₃ high-entropy ceramic. Meanwhile, prominent temperature, frequency, and cycle stability as well as charge–discharge performance are also exhibited in the corresponding sample. These results confirm the feasibility of the studied high-entropy composition for advanced energy storage applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2629–2639 2629–2639"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Optimization of Sulfonium-Functionalized Molecular Resists for EUV and Electron Beam Lithography","authors":"Zhuoran Liu,&nbsp;Jinping Chen*,&nbsp;Tianjun Yu,&nbsp;Yi Zeng,&nbsp;Xudong Guo,&nbsp;Shuangqing Wang,&nbsp;Rui Hu,&nbsp;Michaela Vockenhuber,&nbsp;Peng Tian,&nbsp;Dimitrios Kazazis,&nbsp;Yasin Ekinci*,&nbsp;Guoqiang Yang* and Yi Li*,&nbsp;","doi":"10.1021/acsaelm.5c0027310.1021/acsaelm.5c00273","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00273https://doi.org/10.1021/acsaelm.5c00273","url":null,"abstract":"<p >We report the synthesis and lithographic evaluation of a series of sulfonium-functionalized molecules nonchemically amplified resists (n-CARs) designed for high-resolution lithography. These molecular resists, built upon a rigid adamantane core, feature varied substitution positions (meta or para), side chains (methoxy or butoxy), and counteranions (CF₃SO₃^–, BF₄^–, PF₆^–, and SbF₆^–). Our study highlights that meta-substitution and the incorporation of flexible butoxy side chains significantly enhance the film quality and lithographic performance. Notably, the ADMBu-TF resist, functionalized with CF₃SO₃^– and meta-substituted butoxy chains, exhibits the best lithographic performance. Using extreme ultraviolet lithography, we achieved 15 nm line/space (L/S) patterns with a line-edge roughness of 2.2 nm, positioning this resist as a promising candidate for next-generation lithographic processes.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2640–2649 2640–2649"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping Effects on Multivalence States, Electronic Structure, and Optical Band Gap in LaCrO₃ under Varied Atmospheres: An Integrated Experimental and Density Functional Theory Study.","authors":"Edward M Sabolsky, Javier A Mena, Víctor Mendoza-Estrada, Rafael González-Hernández, Katarzyna Sabolsky, Konstantinos Sierros","doi":"10.1021/acsaelm.4c02359","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02359","url":null,"abstract":"<p><p>Doping effects on the valence state, electronic structure, and optical band and the effects on electrical conductivity were studied on the doped lanthanum chromite (LaCrO₃) system. The specific compositions studied were La_1-<i>x</i> Ca _<i>x</i> CrO₃ (LCC<i>x</i>), La_1-<i>x</i> Sr _<i>x</i> CrO₃ (LSC<i>x</i>), and La_0.8Sr_0.2Cr_1-<i>x</i> Mn _<i>x</i> O₃ (LSCM<i>x</i>) (0.1 ≤ <i>x</i> ≤ 0.4). The powders were synthesized using a modified Pechini sol-gel method, and the ceramic samples were densified using a reactive sintering method resulting in densities >96% theoretical. X-ray photoelectron spectroscopy (XPS) was completed to characterize the defect states and cationic valence compensation as a result of divalent (Ca²⁺ or Sr²⁺) and trivalent (Mn³⁺) substitutions. XPS was completed for samples tested in oxidizing and reducing atmospheres (up to 1500 °C), which provided insights into the oxidation state transitions induced by the Ca²⁺ and Sr²⁺ dopants. The work notably demonstrated, for the first time, the oxidation/reduction transitions of Cr⁴⁺ to Cr³⁺ in Sr²⁺/Mn³⁺ co-doped samples under reducing atmospheres. Reflectance UV-vis spectrophotometry optical band gap measurements were also completed for the same materials; a decrease in the optical band gap (2.81-3.12 eV) was shown with increased substitution, suggesting electronic structure modifications in the LaCrO₃ perovskite. Density functional theory calculations validated experimental trends, predicting a diminishing band gap with a rising dopant concentration. The transition in Cr oxidation states was attributed to the presence of divalent/trivalent cations. These findings contribute some insights into methods to tune the LaCrO₃ electrical properties for various low- and high-temperature applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2515-2528"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11948326/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143750170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping Effects on Multivalence States, Electronic Structure, and Optical Band Gap in LaCrO3 under Varied Atmospheres: An Integrated Experimental and Density Functional Theory Study","authors":"Edward M. Sabolsky*,&nbsp;Javier A. Mena,&nbsp;Víctor Mendoza-Estrada,&nbsp;Rafael González-Hernández,&nbsp;Katarzyna Sabolsky and Konstantinos Sierros,&nbsp;","doi":"10.1021/acsaelm.4c0235910.1021/acsaelm.4c02359","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02359https://doi.org/10.1021/acsaelm.4c02359","url":null,"abstract":"<p >Doping effects on the valence state, electronic structure, and optical band and the effects on electrical conductivity were studied on the doped lanthanum chromite (LaCrO₃) system. The specific compositions studied were La_1–<i>x</i>Ca_<i>x</i>CrO₃ (LCC<i>x</i>), La_1–<i>x</i>Sr_<i>x</i>CrO₃ (LSC<i>x</i>), and La_0.8Sr_0.2Cr_1–<i>x</i>Mn_<i>x</i>O₃ (LSCM<i>x</i>) (0.1 ≤ <i>x</i> ≤ 0.4). The powders were synthesized using a modified Pechini sol–gel method, and the ceramic samples were densified using a reactive sintering method resulting in densities &gt;96% theoretical. X-ray photoelectron spectroscopy (XPS) was completed to characterize the defect states and cationic valence compensation as a result of divalent (Ca²⁺ or Sr²⁺) and trivalent (Mn³⁺) substitutions. XPS was completed for samples tested in oxidizing and reducing atmospheres (up to 1500 °C), which provided insights into the oxidation state transitions induced by the Ca²⁺ and Sr²⁺ dopants. The work notably demonstrated, for the first time, the oxidation/reduction transitions of Cr⁴⁺ to Cr³⁺ in Sr²⁺/Mn³⁺ co-doped samples under reducing atmospheres. Reflectance UV–vis spectrophotometry optical band gap measurements were also completed for the same materials; a decrease in the optical band gap (2.81–3.12 eV) was shown with increased substitution, suggesting electronic structure modifications in the LaCrO₃ perovskite. Density functional theory calculations validated experimental trends, predicting a diminishing band gap with a rising dopant concentration. The transition in Cr oxidation states was attributed to the presence of divalent/trivalent cations. These findings contribute some insights into methods to tune the LaCrO₃ electrical properties for various low- and high-temperature applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2515–2528 2515–2528"},"PeriodicalIF":4.3,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02359","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect Mitigation in Cesium–Copper–Iodide Perovskite Nanocrystals for High-Performance Lead-Free Nanocomposite X-ray Detectors","authors":"Li Ding,&nbsp;Yuyang Li,&nbsp;Hui Liu,&nbsp;Lixiang Wang,&nbsp;Deren Yang and Yanjun Fang*,&nbsp;","doi":"10.1021/acsaelm.5c0003510.1021/acsaelm.5c00035","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00035https://doi.org/10.1021/acsaelm.5c00035","url":null,"abstract":"<p >Lead-free perovskites nanocrystals (PNCs) have attracted significant attention as promising candidates for X-ray detection due to their high X-ray stopping power, remarkable radioluminescence light yield and favorable biocompatibility. However, the bulk and surface defects in the PNCs, formed during the purification or device fabrication process, may remarkably affect the charge transport properties and stability of the detectors. In this study, we discovered that the Cs₃Cu₂I₅ PNCs are quite sensitive to the thermal annealing temperature, and a high temperature larger than 100 °C can trigger the decomposition of the PNCs and therefore the generation of bulk defects within them. By optimizing the annealing process, we are able to achieve the efficient solvent evaporation while maintaining the structure integrity of the PNCs. Additionally, a NaI assisted in situ surface passivation strategy was proposed to repair the surface defects caused by ligand detachment during the PNC purification process, further reducing the nonradiative recombination and suppressing the ion-migration effect. The resultant Cs₃Cu₂I₅ PNC-organic bulk heterojunction nanocomposite X-ray detectors achieve a remarkable sensitivity of over 4000 μC·Gy_air^–1·cm^–2 and a low detection limit of 30 nGy_air·s^–1, alongside enhanced response speed and irradiation stability, positioning them among the best-performing lead-free perovskite film-based X-ray detectors reported to date.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2564–2574 2564–2574"},"PeriodicalIF":4.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing.","authors":"Sayantan Ghosh, Muhammad Bilal Khan, Slawomir Prucnal, René Hübner, Phanish Chava, Tom Mauersberger, Thomas Mikolajick, Artur Erbe, Yordan M Georgiev","doi":"10.1021/acsaelm.4c01896","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01896","url":null,"abstract":"<p><p>Top-down fabrication of reconfigurable field effect transistors (RFET) is a prerequisite for large-scale integration. Silicon (Si) nanowire-based RFET devices have been extensively studied in the past decade. To achieve superior RFET performance, it is necessary to develop scalable devices with controlled silicidation of the channels, a high on-off ratio, and symmetrical p- and n- on-currents. In this work, we present the electrical performance of scalable RFET devices based on Si nanowires featuring controlled silicide lengths attained through millisecond-range flash lamp annealing (FLA). The electronic properties of the transistors are optimized by tuning the different gate schemes and gate dielectric materials for nanowire passivation. We explore gate capacitive control on the energy bands in the conduction of charge carriers using various dielectric materials. The transfer characteristics of a single top-gated device with SiO₂ as gate dielectric show enhanced ambipolar behavior with negligible hysteresis, low subthreshold swing values of 210 mV/dec, and an on-off ratio (<i>I</i> _ON/<i>I</i> _OFF) of up to ∼10⁸ (8 orders of magnitude). The devices also demonstrate excellent electron and hole symmetry values with a record pn on-current symmetry of 1.03. Utilizing high-performance, scalable RFET devices with elevated symmetrical on-currents holds great promise for reducing delay and power consumption in future energy-efficient integrated circuitry.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2284-2297"},"PeriodicalIF":4.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11948323/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143750174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array","authors":"Manh-Cuong Nguyen,&nbsp;Eun Chan Park,&nbsp;Rino Choi*,&nbsp;Doo Seok Jeong* and Daewoong Kwon*,&nbsp;","doi":"10.1021/acsaelm.4c0218010.1021/acsaelm.4c02180","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02180https://doi.org/10.1021/acsaelm.4c02180","url":null,"abstract":"<p >We fabricated an Hf-Zr-O (HZO) ferroelectric field-effect transistor (FeFET) array as a combination-encoding content-addressable memory (CECAM), offering higher content density than other ternary content-addressable memories (TCAM). Considering the robust nonvolatile memory behavior of FeFETs and efficient parallel searching ability through combination-encoding, the CECAM fabricated with the HZO FeFET array is a suitable candidate for next-generation searching engines. Additionally, it offers advantages such as negligible standby power, optimal matching, high content density, and significantly reduced operation power (mismatch power). The average mismatch power per bit per switch in CECAM significantly decreased with increasing size, with reductions of up to 65% for CECAMs containing more than eight FeFETs compared to TCAMs using the same FeFETs. We developed a calculation model to estimate CECAM matching current and power consumption based on the characteristics of a single FeFET, enabling performance prediction from early research stages and facilitating CECAM circuit design.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2404–2412 2404–2412"},"PeriodicalIF":4.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene-Based Antifreeze Inhibitory Artificial Synapses","authors":"Kai Huang,&nbsp;Longfeng Lv,&nbsp;Mingcen Weng,&nbsp;Huamin Chen* and Yun Xu*,&nbsp;","doi":"10.1021/acsaelm.5c0007510.1021/acsaelm.5c00075","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00075https://doi.org/10.1021/acsaelm.5c00075","url":null,"abstract":"<p >Artificial synaptic devices, which successfully mimic the excitation transmission between neurons, have rapidly developed in recent years. However, inhibitory artificial synapses require further research, especially in terms of their performance at low temperature. Herein, an antifreeze inhibitory artificial synapse based on lithium–poly(ethylene oxide), i.e., (Li–PEO)/Ti₃C₂ MXene, is proposed. The function of inhibitory biological synapses was simulated by using a combination of Ti₃C₂ MXene with a Li–PEO solid-state electrolyte layer. An inhibitory artificial synaptic device fabricated with a Cu/SiO₂/Li–PEO/Ti₃C₂MXene/Cu structure simulates the potential transmission function of inhibitory neural synapses and can generate an inhibitory postsynaptic potential. The Li⁺ ions provided by the PEO solid electrolyte layer migrate within the PEO and Ti₃C₂ MXene layers under an electric field and are eventually captured by Ti₃C₂ MXene. The captured ions no longer participate in potential transmission, causing a decrease in the postsynaptic membrane response as the number of free ions decreases. Importantly, the device demonstrates excellent antifreezing performance for practical applications, still maintaining about 80% of its performance at a low temperature of 220 K. This work offers insights into the MXene-based architecture design toward the development of inhibitory artificial synapses and high-performance artificial nervous systems for low-temperature operation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2593–2601 2593–2601"},"PeriodicalIF":4.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing","authors":"Sayantan Ghosh*,&nbsp;Muhammad Bilal Khan,&nbsp;Slawomir Prucnal,&nbsp;René Hübner,&nbsp;Phanish Chava,&nbsp;Tom Mauersberger,&nbsp;Thomas Mikolajick,&nbsp;Artur Erbe and Yordan M. Georgiev*,&nbsp;","doi":"10.1021/acsaelm.4c0189610.1021/acsaelm.4c01896","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01896https://doi.org/10.1021/acsaelm.4c01896","url":null,"abstract":"<p >Top-down fabrication of reconfigurable field effect transistors (RFET) is a prerequisite for large-scale integration. Silicon (Si) nanowire-based RFET devices have been extensively studied in the past decade. To achieve superior RFET performance, it is necessary to develop scalable devices with controlled silicidation of the channels, a high on–off ratio, and symmetrical p- and n- on-currents. In this work, we present the electrical performance of scalable RFET devices based on Si nanowires featuring controlled silicide lengths attained through millisecond-range flash lamp annealing (FLA). The electronic properties of the transistors are optimized by tuning the different gate schemes and gate dielectric materials for nanowire passivation. We explore gate capacitive control on the energy bands in the conduction of charge carriers using various dielectric materials. The transfer characteristics of a single top-gated device with SiO₂ as gate dielectric show enhanced ambipolar behavior with negligible hysteresis, low subthreshold swing values of 210 mV/dec, and an on–off ratio (<i>I</i>_ON/<i>I</i>_OFF) of up to ∼10⁸ (8 orders of magnitude). The devices also demonstrate excellent electron and hole symmetry values with a record pn on-current symmetry of 1.03. Utilizing high-performance, scalable RFET devices with elevated symmetrical on-currents holds great promise for reducing delay and power consumption in future energy-efficient integrated circuitry.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2284–2297 2284–2297"},"PeriodicalIF":4.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01896","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-Assisted Patterning of 2D/1D WS2/CNT Electrodes for All-Solid-State In-Plane Microsupercapacitors with Improved Rate Performance","authors":"Ali Sajedi-Moghaddam*,&nbsp; and ,&nbsp;Elham Rahmanian,&nbsp;","doi":"10.1021/acsaelm.4c0234510.1021/acsaelm.4c02345","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02345https://doi.org/10.1021/acsaelm.4c02345","url":null,"abstract":"<p >Microsupercapacitors (MSCs) based on high-performance electrode nanomaterials are considered alternative power sources capable of meeting the growing needs of miniaturized electronic devices. Tungsten disulfide (WS₂) nanosheets, with their large surface area and pseudocapacitive nature, serve as potential building blocks for MSC device fabrication. However, the poor electrical conductivity of semiconducting 2H WS₂ nanosheets hinders electron transport, thereby limiting the specific capacitance and rate performance of the resulting MSCs. In this study, we report the fabrication of laser-scribed all-solid-state high-rate MSCs by incorporating carbon nanotubes (CNTs) into liquid-exfoliated WS₂ nanosheets. The optimized MSC device (WS₂/CNT5) exhibits an areal capacitance of 6.8 mF cm^–2 at 100 μA cm^–2, with an excellent cyclic stability of 88.9% after 1000 cycles. Notably, the CNT-incorporated devices, WS₂/CNT5 and WS₂/CNT10, demonstrate substantial enhancements in rate capability, with 74% and 91% retention, respectively, compared to the pristine WS₂-based device. Additionally, the WS₂/CNT5 MSC demonstrates excellent energy and power densities of 0.94 μW h cm^–2 and 0.05 mW cm^–2. These results can be attributed to the formation of a conductive 1D CNT network within the 2D WS₂ structure, which facilitates fast electron transport. We believe this strategy can be extended to other synergistic 2D/1D nanocomposites for scalable and facile fabrication of high-rate MSC devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2484–2493 2484–2493"},"PeriodicalIF":4.3,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}