ACS Applied Electronic Materials最新文献_第3页

First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications 纳米场效应晶体管中单层紫磷烯的第一性原理预测

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-06 DOI: 10.1021/acsaelm.5c0016610.1021/acsaelm.5c00166

Yonghao Cheng, Pengpeng Sang*, Qianwen Wang, Han Pan, Jixuan Wu, Xuepeng Zhan, Dechun Li and Jiezhi Chen*,

{"title":"First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications","authors":"Yonghao Cheng, Pengpeng Sang*, Qianwen Wang, Han Pan, Jixuan Wu, Xuepeng Zhan, Dechun Li and Jiezhi Chen*, ","doi":"10.1021/acsaelm.5c0016610.1021/acsaelm.5c00166","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00166https://doi.org/10.1021/acsaelm.5c00166","url":null,"abstract":"With the demand for ultrascaled field-effect transistors (FETs), Black Phosphorene (BP) has shown remarkable semiconductor properties but faces significant challenges in ambient stability. The recent synthesis of Violet Phosphorene (VP), an allotrope of BP, opens up possibilities for two-dimensional (2D) pnictogen semiconductors. Here, by first-principles calculations, we systematically evaluated the potential applications of monolayer VP in nanoscale FETs. Our calculations reveal that the VP monolayer possesses superior stability and a larger direct band gap of 2.54 eV compared with the BP monolayer. The full-phonon scattered electron mobility was accurately evaluated to be 382 cm2·V–1·s–1 at room temperature. Quantum transport simulations demonstrate the effective switching performance of the 5.5 nm VP-FETs with the Ion/Ioff exceeding 106 in low-power (LP) applications. Although the VP-FET shows a lower Ion than the BP-FET in LP applications, it achieves a higher Ion in high-performance (HP) applications. Given its superior stability, this work underscores the potential applications of the VP monolayer in nanoscale FETs and broadens the scope of 2D pnictogen as promising channel candidates.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4435–4442 4435–4442"},"PeriodicalIF":4.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Piezoelectricity Assessment of PVDF-Based Ternary Composites Simultaneously Tuned via Electrostatic and Hydrogen Bonding Interaction 通过静电和氢键相互作用同时调谐pvdf基三元复合材料的压电性评估

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-06 DOI: 10.1021/acsaelm.5c0038910.1021/acsaelm.5c00389

Abhishek Sasmal*, Aniket Patra, Payel Maiti, Shrabanee Sen* and A. Arockiarajan*,

{"title":"Piezoelectricity Assessment of PVDF-Based Ternary Composites Simultaneously Tuned via Electrostatic and Hydrogen Bonding Interaction","authors":"Abhishek Sasmal*, Aniket Patra, Payel Maiti, Shrabanee Sen* and A. Arockiarajan*, ","doi":"10.1021/acsaelm.5c0038910.1021/acsaelm.5c00389","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00389https://doi.org/10.1021/acsaelm.5c00389","url":null,"abstract":"Tuning the polarity of poly(vinylidene fluoride) (PVDF) via interfacial interactions with fillers has been widely explored in the past few years. However, most of the past works dealt with a single type of interfacial interaction. In the present work, we investigate the simultaneous effect of electrostatic and hydrogen bonding interactions on the polarity and piezoelectricity of PVDF-based composites. For this purpose, ZnO with negative surface charges has been used to induce electrostatic interaction with −CH2 dipoles, and ZnSn(OH)6, having a lot of −OH groups, has been used to induce hydrogen bonding interaction with −CF2 dipoles of PVDF. The polar phase increases to ∼90% for the mixed filler-loaded composite, which was ∼83% for the single filler-loaded composites. This simultaneous effect has also significantly improved the piezoelectric output voltage of the corresponding piezoelectric nanogenerator to ∼30 V, up from ∼18 V for any single type of interaction. The positive effect of the mentioned simultaneous interactions in PVDF has also been further established via theoretical simulations. Considering both the effect of the polarity of the composites and the individual piezoelectricity of the fillers, the theoretical simulations, as well as the experiments, have proven that polarity plays the main dominating role in tuning the piezoelectric performance of PVDF-based composites loaded with smaller amounts of filler particles.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4540–4551 4540–4551"},"PeriodicalIF":4.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Carrier Density Induced Metal–Insulator Transition in Bi2O2Se Nanosheets Bi2O2Se纳米片中载流子密度诱导的金属-绝缘体跃迁

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-06 DOI: 10.1021/acsaelm.5c0026410.1021/acsaelm.5c00264

Suraj Lakhchaura, Gokul M. Anilkumar and Atikur Rahman*,

{"title":"Carrier Density Induced Metal–Insulator Transition in Bi2O2Se Nanosheets","authors":"Suraj Lakhchaura, Gokul M. Anilkumar and Atikur Rahman*, ","doi":"10.1021/acsaelm.5c0026410.1021/acsaelm.5c00264","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00264https://doi.org/10.1021/acsaelm.5c00264","url":null,"abstract":"The metal-insulator transition (MIT) in two-dimensional (2D) systems fascinates researchers by challenging existing theories regarding its microscopic origins. In 2D materials, MIT emerges from the interplay of disorder and carrier interactions, modulating the delicate balance between localization and delocalization of charge carriers. Here, we report MIT in few-nanometer-thick Bi2O2Se nanosheets by regulating electron density via back-gate voltage. At high carrier density, conductivity exhibits a near-linear scaling with density (σ ∝ n2Dα with α ≈ 1), reflecting transport dominated by screened Coulomb impurity scattering. As the electron density decreases below a critical threshold (n2D < nth), charge homogeneity collapses, leading to strong spatial inhomogeneities that trigger a percolation-driven MIT. In this insulating regime, isolated conducting puddles fail to connect, and charge transport follows thermal activation of carriers trapped in localized states, highlighting the significant role of disorder in this material. We found the average value of percolation exponent δ = 1.28, which matches well with the theoretically predicted value of 1.33 for 2D continuum percolation. Unlike Anderson localization, which predicts universal localization in 2D with any disorder and requires significant scattering, percolation in high-mobility Bi2O2Se is driven by tunable carrier density and impurity scattering. These findings show that the gate-tunable MIT in Bi2O2Se nanosheets is largely controlled by percolation, offering a simpler way to understand conduction in 2D materials where disorder is moderate, and carrier density plays a key role.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4450–4456 4450–4456"},"PeriodicalIF":4.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures 具有肖特基栅结构的AlGaN/GaN高电子迁移率晶体管中漏极诱导势垒降低效应的饱和现象研究

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-05 DOI: 10.1021/acsaelm.5c0050510.1021/acsaelm.5c00505

Po-Hsun Chen*, Tsung-Han Yeh, Cheng-Hsien Lin and Kai-Chun Chang,

{"title":"Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures","authors":"Po-Hsun Chen*, Tsung-Han Yeh, Cheng-Hsien Lin and Kai-Chun Chang, ","doi":"10.1021/acsaelm.5c0050510.1021/acsaelm.5c00505","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00505https://doi.org/10.1021/acsaelm.5c00505","url":null,"abstract":"This study investigates the saturation phenomenon of the drain-induced barrier lowering (DIBL) effect in Schottky-gate gallium nitride (GaN) high-electron-mobility transistors (HEMTs) featuring T-gate structures. The threshold voltage (VTH) and DIBL under various drain voltages (VD) are examined through electrical measurements and Silvaco simulations. Experimental results reveal that the DIBL effect saturates at high VD. Furthermore, comparison of ID–VG characteristics between devices with and without T-gate structures indicates that the DIBL saturation phenomenon exclusively occurs in T-gate structures. To investigate the underlying mechanism, Silvaco simulations are conducted to analyze the electric field distribution, energy band diagrams, and two-dimensional electron gas (2DEG) concentrations under high VD. The results demonstrate that the T-gate structure effectively suppresses the DIBL effect by dispersing the electric field, reducing the 2DEG concentration, and increasing the voltage drop across the drift region. Additionally, the influence of T-gate geometry on DIBL suppression is systematically studied by varying T-gate extension lengths and heights. This analysis provides valuable insights into optimizing T-gate design for enhanced performance of GaN HEMTs under high drain bias conditions.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4609–4615 4609–4615"},"PeriodicalIF":4.3,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bio-Inspired Smart Wings with PGPE-Enhanced Liquid Metal Circuits for Micro Flapping-Wing Robotics 微型扑翼机器人仿生智能翅膀与pgpe增强液态金属电路

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-05 DOI: 10.1021/acsaelm.5c0045210.1021/acsaelm.5c00452

Jiayun Chen, Yanzao Li, Yuqing Shen, Bochuan Jiang, Yang Wang, Chaoqi Huang, Yanan Lu, Shuo Zhang* and Yuhang Li*,

{"title":"Bio-Inspired Smart Wings with PGPE-Enhanced Liquid Metal Circuits for Micro Flapping-Wing Robotics","authors":"Jiayun Chen, Yanzao Li, Yuqing Shen, Bochuan Jiang, Yang Wang, Chaoqi Huang, Yanan Lu, Shuo Zhang* and Yuhang Li*, ","doi":"10.1021/acsaelm.5c0045210.1021/acsaelm.5c00452","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00452https://doi.org/10.1021/acsaelm.5c00452","url":null,"abstract":"This study presents bioinspired smart wings for micro flapping-wing robots, integrating stretchable electronics with Presprayed Galinstan Pin Extension (PGPE) technology. The smart wings incorporate real-time motion sensing and thermal management systems directly into flexible wing structures, addressing critical challenges in flight control, stability, and environmental adaptability. PGPE-enhanced liquid metal circuits provide superior electrical conductivity, adhesion, and mechanical resilience under dynamic deformation, ensuring stable performance during continuous flapping motion. Furthermore, the technology achieves enhanced passive thermal dissipation via an improved interface design, effectively mitigating overheating during prolonged operation. The circuits enable precise monitoring of wing angular position and acceleration, optimizing flight dynamics and improving system reliability across diverse conditions. Experimental results demonstrate the seamless integration of PGPE-enhanced circuits within the wing structure, maintaining stable electrical performance and effective thermal regulation under mechanical strain. By combining motion sensing and thermal control, these smart wings significantly enhance the functionality and adaptability of flapping-wing robotics, paving the way for advancements in environmental monitoring, search-and-rescue, and surveillance applications. This work highlights the potential of PGPE technology in revolutionizing flexible electronics for bioinspired robotic systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 10","pages":"4582–4595 4582–4595"},"PeriodicalIF":4.3,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144137635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic Layer Etching of SiO2 Utilizing Ultra-Low Electron Temperature Plasma 利用超低电子温度等离子体的SiO2原子层刻蚀

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-05 DOI: 10.1021/acsaelm.5c0036210.1021/acsaelm.5c00362

Junyoung Park, Nayeon Kim, Jung-Eun Choi, Yujin Yeo, Min-Seok Kim, Chang-Min Lim, Beom-Jun Seo and Chin-Wook Chung*,

引用次数: 0

Trace NO2 Detection in Ambient Air Using Co-Phthalocyanine-Modified Graphene Field-Effect Transistors 利用共酞菁修饰的石墨烯场效应晶体管检测环境空气中痕量二氧化氮

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-02 DOI: 10.1021/acsaelm.5c0011410.1021/acsaelm.5c00114

Kazuki Kikawada, Naoki Yazawa, Ryudai Nakanishi, Kenzo Maehashi* and Takashi Ikuta*,

{"title":"Trace NO2 Detection in Ambient Air Using Co-Phthalocyanine-Modified Graphene Field-Effect Transistors","authors":"Kazuki Kikawada, Naoki Yazawa, Ryudai Nakanishi, Kenzo Maehashi* and Takashi Ikuta*, ","doi":"10.1021/acsaelm.5c0011410.1021/acsaelm.5c00114","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00114https://doi.org/10.1021/acsaelm.5c00114","url":null,"abstract":"The sensitive detection of NO2 in air is crucial for controlling environmental pollution and protecting public health. Therefore, a simple and sensitive method for detecting NO2 must be developed. In this study, we fabricated phthalocyanine (Co, Cu, Ni, and H2)-modified graphene field-effect transistors (FETs) for NO2 detection at the parts-per-billion (ppb) level. Compared with other phthalocyanine-modified devices, the Co-phthalocyanine-modified graphene FET exhibited large voltage shifts in its transfer characteristics following the introduction of NO2 gas at the ppb level. The Dirac-point voltage shifts observed at each NO2 concentration tested were well fitted to the Langmuir adsorption isotherm, indicating that the Co-phthalocyanine-modified graphene FET was capable of quantitatively detecting NO2 at concentrations ranging from a few ppb to the sub-ppm level, corresponding to environmental standards. In addition, the Co-phthalocyanine-modified graphene FET demonstrated high selectivity for NO2 and maintained excellent sensing characteristics even after repeated use. The NO2-sensing performance of the Co-phthalocyanine-modified graphene FET was not significantly degraded in air (0–25% relative humidity (RH)), and the device could quantitatively detect NO2 with high sensitivity even in 40% RH air. Considering these results, the Co-phthalocyanine-modified graphene FET could enable the highly sensitive detection of NO2 at the ppb level in ambient air with humidity.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3828–3836 3828–3836"},"PeriodicalIF":4.3,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Polyacrylamide Hydrogel-Based Wearable Sensors for Electrocardiography Monitoring and Motion Sensing 基于高性能聚丙烯酰胺水凝胶的可穿戴式传感器，用于心电图监测和运动传感

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-02 DOI: 10.1021/acsaelm.5c0024510.1021/acsaelm.5c00245

Saurabh Soni, Riya Wadhwa, Manish Rishi, Jayant Kalra, Aditya Teja, Dhiraj Devidas Bhatia and Dipti Gupta*,

{"title":"High-Performance Polyacrylamide Hydrogel-Based Wearable Sensors for Electrocardiography Monitoring and Motion Sensing","authors":"Saurabh Soni, Riya Wadhwa, Manish Rishi, Jayant Kalra, Aditya Teja, Dhiraj Devidas Bhatia and Dipti Gupta*, ","doi":"10.1021/acsaelm.5c0024510.1021/acsaelm.5c00245","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00245https://doi.org/10.1021/acsaelm.5c00245","url":null,"abstract":"Conductive hydrogels have gained significant attention due to their remarkable properties, including stretchability, self-adhesiveness, deformability, and cost-effectiveness. However, existing hydrogel-based sensors often suffer from limited biocompatibility, poor mechanical strength, and inadequate adhesion, limiting their suitability for wearable electronics. Herein, we report a highly conductive, skin-friendly hydrogel electrode for real-time electrocardiography (ECG) and motion monitoring. The hydrogel is based on a polyacrylamide (PAM) network incorporated with the conductive polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS). The PAM–PEDOT:PSS hydrogel exhibited exceptional mechanical properties, with tensile strengths of 5–68 kPa at corresponding strains of 142 to 646%. It also demonstrated excellent biocompatibility, gentle skin adhesion, and optimized mechanical performance by tailoring the cross-linker concentration (N,N-methylene Bis(acrylamide)) in the PAM matrix. Notably, the hydrogel exhibited low hysteresis (<3%) under stress–strain cycling, ensuring reliable performance during repeated deformation. Wearable hydrogel electrode testing showed a strong correlation (99.6%) between recorded ECG signals and those from commercial electrodes. Additionally, the fabricated strain sensors exhibited high sensitivity, an extensive sensing range (0–646% strain), rapid response, and outstanding stability. These features enable precise monitoring of diverse physical signals, from large-scale joint movements to subtle muscle contractions. This work presents a promising approach for developing flexible strain sensors and electronic skins, advancing next-generation wearable devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4025–4034 4025–4034"},"PeriodicalIF":4.3,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Performances of Room Temperature Gas Sensor by Indium Doping of P3HT/ZnO Hybrid Nanocomposites 铟掺杂P3HT/ZnO杂化纳米复合材料改善室温气体传感器性能

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-01 DOI: 10.1021/acsaelm.5c0025210.1021/acsaelm.5c00252

Maher Jdir, Marwa El Beji, Saba Aziz, Mohsen Erouel*, Slah Mansouri, Anna Grazia Monteduro, Giuseppe Maruccio and Lassaad El Mir*,

{"title":"Improved Performances of Room Temperature Gas Sensor by Indium Doping of P3HT/ZnO Hybrid Nanocomposites","authors":"Maher Jdir, Marwa El Beji, Saba Aziz, Mohsen Erouel*, Slah Mansouri, Anna Grazia Monteduro, Giuseppe Maruccio and Lassaad El Mir*, ","doi":"10.1021/acsaelm.5c0025210.1021/acsaelm.5c00252","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00252https://doi.org/10.1021/acsaelm.5c00252","url":null,"abstract":"Hybrid films of poly(3-hexylthiophene) (P3HT)/indium-doped zinc oxide (IZO) and undoped ZnO were developed in this work for the detection of volatile organic compounds at room temperature. Indium-doped and undoped ZnO nanoparticles were synthesized using the sol–gel method and mixed with P3HT before deposition using the spin-coating technique on interdigitated electrodes to form the hybrid sensing layers. The obtained films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy, confirming the presence of P3HT/ZnO hybrid phase and well-dispersed particle structures with nanometric size in the composite thin films. The sensing properties of the sensors were studied for the reduction of gas (ethanol) at room temperature. In particular, the composite P3HT/IZO1% exhibits a maximum response of 104% and a fast response time of about 58 s to 3000 ppm of ethanol concentration at room temperature.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4035–4048 4035–4048"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Skin-Mountable and Self-Healable Hydrogel for Strain Sensing 用于应变传感的皮肤贴装和自愈合水凝胶

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-05-01 DOI: 10.1021/acsaelm.5c0055410.1021/acsaelm.5c00554

Xu Yang, Hui Zhang, Ziang Wang, Xiaopeng Sun and Hengchao Ren*,

{"title":"Skin-Mountable and Self-Healable Hydrogel for Strain Sensing","authors":"Xu Yang, Hui Zhang, Ziang Wang, Xiaopeng Sun and Hengchao Ren*, ","doi":"10.1021/acsaelm.5c0055410.1021/acsaelm.5c00554","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00554https://doi.org/10.1021/acsaelm.5c00554","url":null,"abstract":"The rapid advancement of wearable electronic devices has heightened the demand for flexible strain sensors with high sensitivity, stretchability, biocompatibility, self-adhesion, self-healing, and water-retention capabilities. However, existing sensors often fall short in these areas, particularly in maintaining stable skin contact, self-repair, and long-term hydration, limiting their practical applications. To address these challenges, we developed a BMIM-BF4/PEDOT:PSS/gelatin/PVA hydrogel (BPGPH) with a double-network structure. This hydrogel exhibits exceptional mechanical properties, enduring up to 400% strain and 318 kPa stress, and maintains its integrity and performance over 12 days due to glycerol-enhanced water retention. With a gauge factor of 0.29, BPGPH demonstrates high sensitivity across 0–300% strain, enabling precise detection of human motions. Its self-adhesion and self-healing properties, driven by abundant hydroxyl groups, further enhance its suitability for applications in gesture recognition and human–computer interaction. The synergistic effect of ionic liquids and conductive polymers ensures stable conductivity, while the multinetwork structure provides robustness and flexibility. These features make BPGPH a promising candidate for next-generation wearable sensors in healthcare monitoring, human–machine interfaces, and sports performance tracking.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4371–4381 4371–4381"},"PeriodicalIF":4.3,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0