ACS Applied Electronic Materials最新文献

{"title":"Thickness Dependence of High-Temperature (Cu,C)Ba2Ca3Cu4Oy Superconducting Films with Large Irreversible Field","authors":"Ping Zhu,&nbsp;Yangyang Chen*,&nbsp;Feng Fan,&nbsp;Jinyu He,&nbsp;Shuyun Tong,&nbsp;Liying Yang,&nbsp;Yugang Li,&nbsp;Yanqun Guo and Chuanbing Cai*,&nbsp;","doi":"10.1021/acsaelm.4c0103110.1021/acsaelm.4c01031","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01031https://doi.org/10.1021/acsaelm.4c01031","url":null,"abstract":"<p >(Cu,C)Ba₂Ca₃Cu₄O_<i>y</i> ((Cu,C)-1234) is a nontoxic, non-rare-earth-element-included superconducting material characterized by high critical temperature <i>T</i>_C, critical current density <i>J</i>_C, and irreversible field μ₀<i>H</i>_irr. The growth of superconducting (Cu,C)-1234 thin films by using the pulsed laser deposition (PLD) method circumvents the challenges associated with high-pressure bulk crystal growth. Nonetheless, several critical aspects regarding the growth mechanism, strain effects, and thickness-dependent behavior in PLD-grown (Cu,C)-1234 thin films remain poorly understood. Here, the thickness dependence of the superconducting properties in (Cu,C)-1234 thin films is reported systematically. Highly oriented, <i>a</i>-axis (Cu,C)-1234 films on LaAlO₃ (LAO) (1 0 0) substrates, with thickness ranging from 25 to 500 nm, is realized. Transport measurements reveal that films with a critical thickness of ∼250 nm exhibit optimized superconducting performance, as characterized by uniform surface morphology, high critical temperature, strong pining energy, and large irreversible field. Moreover, films near this optimal thickness display an increase in the irreversible field μ₀<i>H</i>_irr, approximately 9 T at 49 K (0.77<i>T</i>_C), which could be attributed to an elevated effective pinning barrier. This result paves the way for the application of the (Cu,C)-1234 thin film under high magnetic fields.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142516912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Part Surfactant-Assisted Exfoliation of Hexagonal Boron Nitride Nanosheets to Obtain Highly Stable Two-Dimensional Nanomaterial Dispersions","authors":"Meghana Jois H S,&nbsp;Ramin Khosravi,&nbsp;Rashid Mirzavand and Anastasia Leila Elias*,&nbsp;","doi":"10.1021/acsaelm.4c0114310.1021/acsaelm.4c01143","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01143https://doi.org/10.1021/acsaelm.4c01143","url":null,"abstract":"<p >Printable dielectric materials that exhibit high dielectric constants and low losses at high frequencies are needed for additive manufacturing of electronic devices. One promising nanomaterial for use in such systems is hexagonal boron nitride (hBN). This 2D nanomaterial is insulating due to its wide band gap and has a dielectric constant ranging from 2 to 4, making it an ideal candidate for applications including gate dielectrics, capacitors, and passivation layers in 2D nanoelectronics. However, stabilizing the dispersion of hBN nanosheets for printing applications while minimizing the reliance on toxic solvents and excessive surfactants remains a challenge. Many of the prevailing exfoliation techniques are time-consuming and resource-intensive. This work explores a two-part, surfactant-assisted mechanical exfoliation method to obtain stable hBN nanosheet dispersions from bulk hBN in a relatively short period, using ball milling followed by probe sonication. Exfoliation of hBN nanosheets assisted by various concentrations (from 0 to 1 wt %) of Triton X −100 was explored. The yield of each mixture was quantified by thermogravimetric analysis (TGA), and a maximum yield of 18.4% was achieved using 1 wt % surfactant. Colloidal stability was examined by using UV–vis spectroscopy, and solutions were found to remain stable for up to 30 days. The quality and size of the nanosheets were assessed using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The dielectric properties of the obtained nanosheets were measured using a vector network analyzer at microwave frequencies, and the real permittivity of the nanosheets ranged from 2.1 to 3.7 with varying concentrations of surfactant used in the synthesis. Furthermore, the nanosheets were found to be insulating and to have low dielectric loss tangents ranging from 0.012 to 0.014. The two-part, surfactant-assisted mechanical exfoliation technique requires much lower processing time than sonication alone and results in highly stable dispersions. The resulting hBN nanosheets exhibited tunable real permittivity and low dielectric loss, positioning these materials as promising options for dielectric ink formulations.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142516913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Label-Free Bioelectronic Impedimetric Immunosensing Device for Alkaline Phosphatase Detection Using Graphene Oxide and Chitosan–Silk Fibroin–Polycaprolactone–Hydroxyapatite-Based Hybrid","authors":"Darshna,&nbsp;Daphika S Dkhar,&nbsp;Pradeep Srivastava* and Pranjal Chandra*,&nbsp;","doi":"10.1021/acsaelm.4c0152410.1021/acsaelm.4c01524","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01524https://doi.org/10.1021/acsaelm.4c01524","url":null,"abstract":"<p >Bone, a dynamic tissue with diverse functions in the human body, plays vital roles, such as providing structural support and protection to organs, serving as the site for blood cell formation, and acting as the primary storage site for calcium. Osteoblasts, bone-forming cells, express alkaline phosphatase (ALP), which binds to the cell surface or matrix vesicles and can be released into the bloodstream. Consequently, ALP can be found in the serum and is commonly used as a biomarker in clinical studies to assess conditions related to bone diseases as well as other disorders. This study presents a label-free approach for detecting ALP using electrochemical impedance spectroscopy (EIS) using a composite probe consisting of graphene oxide (GO) and chitosan (Ch)–silk fibroin (SF)–polycaprolactone (PCL)–hydroxyapatite (HAp) matrix. The GO and composite Ch–SF–PCL–HAp matrix are sequentially deposited on the glassy carbon electrode and further immobilized with anti-ALP antibodies. The biosensor probe is characterized using physical techniques and electrochemical analysis. The biosensor’s analytical performance is assessed using EIS, and it shows a limit of detection of 1.74 (±0.26) U/L with a linear dynamic range of 30–500 U/L, which falls well within the clinical range of ALP detection. The developed biosensor probe exhibits high selectivity for ALP (<i>k</i>_sel &lt; 0.04) when tested against interfering molecules in serum. Furthermore, the system is tested with fetal bovine serum and human serum to detect ALP in biological samples.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanopetal-Assembled SnS Flower-Based Vis–NIR Photodetector","authors":"Prashant Kumar Gupta,&nbsp;Yashwant Puri Goswami and Amritanshu Pandey*,&nbsp;","doi":"10.1021/acsaelm.4c0113310.1021/acsaelm.4c01133","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01133https://doi.org/10.1021/acsaelm.4c01133","url":null,"abstract":"<p >This paper reports a simple, low-cost, and high-performance two-dimensional (2D) nanopetal-assembled three-dimensional (3D) SnS flowers/Si heterojunction-based visible–near-infrared (vis–NIR) photodetector (PD). A modified chemical bath deposition (CBD) method was used to grow a uniform and closely spaced array of SnS flowers on a Si substrate. This type of nanostructure offers a large photoactive area, thus generating a large number of carriers. The high-performance parameters of the fabricated PD (responsivity, 68.21 A/W; external quantum efficiency (EQE), 1.32 × 10⁴%; detectivity, 6.87 × 10¹³ Jones; rise time, 193.91 ms; and fall time, 94.19 ms at 635 nm) are attributed to the heterojunction characteristics resulting from closely spaced nanopetal-assembled SnS flowers on silicon.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Competing Localized-Itinerant Magnetism Evidenced by Critical Behavior in the FexTi2S4 Heideite Sulfides","authors":"Romualdo S. Silva*,&nbsp;João E. Rodrigues,&nbsp;Federico Serrano-Sánchez,&nbsp;Javier Gainza,&nbsp;Norbert M. Nemes,&nbsp;José Luis Martínez and José Antonio Alonso*,&nbsp;","doi":"10.1021/acsaelm.4c0144110.1021/acsaelm.4c01441","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01441https://doi.org/10.1021/acsaelm.4c01441","url":null,"abstract":"<p >We report the critical behavior of the Fe<i>_x</i>Ti₂S₄ (<i>x</i> = 0.24, 0.42) intercalated Heideite sulfides in the vicinity of their second-order magnetic phase transition. Several methods including the modified Arrott plot, Widom scaling law, and the critical isotherm analysis reliably yield critical exponents β = 1.105/0.442, γ = 0.913/1.042, and δ = 1.826/3.357, in agreement with the scaling hypothesis, although slightly deviating from the conventional theoretical values. Using the renormalization group theory analysis, we conclude that the exchange distance <i>J</i>(<i>r</i>) and the correlation length critical exponent ν indicate that increasing Fe content induces a transition from localized spin interactions, described by the mean-field model, to an itinerant-electron 3D Heisenberg-like model near <i>T</i>_C. These features reveal a coupling between short- and long-range magnetic interactions, which are responsible for the unconventional critical behavior in Fe<i>_x</i>Ti₂S₄. Our results provide valuable insights into the magnetic nature and offer tuning mechanisms in Fe<i>_x</i>Ti₂S₄ intercalated sulfides.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01441","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Applications and Future Perspectives of Heterojunction Phototransistors Based on Amorphous Oxide Semiconductors","authors":"Tong Chen,&nbsp;Rundong Hu,&nbsp;Tian Sun,&nbsp;Zuhao Li,&nbsp;Benxuan Li,&nbsp;Xueqing Lv,&nbsp;Bosi Lin,&nbsp;Guijun Li*,&nbsp;Shengdong Zhang and Hang Zhou*,&nbsp;","doi":"10.1021/acsaelm.4c0092310.1021/acsaelm.4c00923","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00923https://doi.org/10.1021/acsaelm.4c00923","url":null,"abstract":"<p >Thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) have attracted significant attention in the field of flat-panel displays due to their excellent electrical performance. Heterojunction phototransistors, formed by integrating amorphous oxide semiconductor thin-film transistors (AOSTFTs) with diverse optoelectronic materials, are of significant research interest and possess extensive application potential. Their advantages include a broad responsive spectral range, adjustable photoresponsivity, and high detectivity, making them a promising technology for digital imaging applications, from low-dose X-ray or biofluorescence detection to neuromorphic vision systems. Herein, we summarize the principal working mechanisms, recent research progress, application fields, and development trends of the AOS based heterojunction phototransistors and discuss the challenges that need to be addressed in the near future.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Effects of Deposition Temperatures for Active and Gate Insulator of Top-Gate Thin-Film Transistors Using InGaZnO Channels Prepared by Thermal Atomic-Layer Deposition","authors":"Ye-Jin Seo,&nbsp;Jae-Wook Lee,&nbsp;Young-Ha Kwon,&nbsp;Nak-Jin Seong,&nbsp;Kyu-Jeong Choi and Sung-Min Yoon*,&nbsp;","doi":"10.1021/acsaelm.4c0138010.1021/acsaelm.4c01380","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01380https://doi.org/10.1021/acsaelm.4c01380","url":null,"abstract":"<p >The synergistic impact of deposition temperature conditions for the InGaZnO (IGZO) and gate insulator (GI) layers during the thermal atomic-layer deposition process on the device performance and operational reliability was examined for the top-gate thin-film transistors (TFTs). The Ga increased with an increase in the channel deposition temperature and did not change significantly following the GI deposition process. Prior to the postannealing process, the transfer characteristics of the devices were predominantly influenced by the GI deposition temperature. Following the postannealing process, however, the thermal stability was affected by both the deposition temperatures of the channel and GI layers. An increase in the GI deposition temperature from 200 to 300 °C resulted in an improvement in the IGZO channel quality, accompanied by a reduction in the hydrogen concentration of the GI. These results indicated that the device, wherein GI was prepared at 300 °C, was appropriate from both perspectives of performance and subsequent postannealing. Nevertheless, only Dev-HD, in which the channel and GI layers were prepared at 270 and 300 °C, respectively, demonstrated favorable thermal stability after a postannealing at 300 °C. Two potential effects may be the formation of a complete network and the content of Ga, which contribute to stable bonding in IGZO channel. It can thus be concluded that the IGZO network structure and cationic composition can be adjusted to control the defect states in the channel, leading to an enhancement in both the device performance and thermal stability of the TG IGZO TFTs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Powered Lateral Heterojunction Photodetectors: Unveiling Ultraviolet Sensitivity via the RbCu2I3 Microwire and the MAPbBr3 Film with Innovative Engineering","authors":"Youchao Kong,&nbsp;Pinsen Zhang,&nbsp;Donghua Fan,&nbsp;Xiaoshuang Li* and Shanshan Yan*,&nbsp;","doi":"10.1021/acsaelm.4c0154310.1021/acsaelm.4c01543","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01543https://doi.org/10.1021/acsaelm.4c01543","url":null,"abstract":"<p >Assembling perovskites into heterojunctions enables multifunctional high-performance photodetectors. Compared with vertical heterojunctions, lateral heterojunctions enhance the optoelectronic performance of devices due to the direct contact between the photosensitive layer and light, reducing light reflection losses. However, the fabrication of all-perovskite lateral heterojunctions is challenging through a solution method. The first perovskites formed are easily dissolved by the solvent of the second precursor, hindering their further application in photodetectors. In this study, we have developed a preparation process for the lateral microwire (MW)/film heterojunction and the Ag/RbCu₂I₃ MW/MAPbBr₃ film/indium tin oxide heterojunction photodetector by utilizing an optical fiber-based physical transfer step. Thanks to the high-quality RbCu₂I₃ MW/MAPbBr₃ film lateral heterojunction, the device demonstrated excellent optoelectronic performance at 0 V bias voltage, with a responsivity of 0.79 mA·W^–1 and a detectivity of 5.34 × 10¹² Jones under 339 nm radiation. In addition, the device exhibited consistent and rapid response times under 355 and 450 nm irradiation. This optical fiber-based physical transfer method provides a self-powered light detection strategy for the preparation of all-perovskite lateral heterojunctions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simultaneous Realization of Single-Crystal-Like Electron Transport and Strong Phonon Scattering in Polycrystalline SrTiO3–xHx","authors":"Takayoshi Katase*,&nbsp;Seiya Nomoto,&nbsp;Xinyi He,&nbsp;Suguru Kitani,&nbsp;Takashi Honda,&nbsp;Hidenori Hiramatsu,&nbsp;Hideo Hosono and Toshio Kamiya*,&nbsp;","doi":"10.1021/acsaelm.4c0130610.1021/acsaelm.4c01306","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01306https://doi.org/10.1021/acsaelm.4c01306","url":null,"abstract":"<p >Simultaneous realization of low thermal conductivity (κ) and high electronic conductivity (σ) has been a challenging issue in developing high-performance thermoelectric bulk materials. SrTiO₃ has been expected as an environmentally benign thermoelectric material, but the intrinsically high κ and low σ across the grain boundaries (GBs) restrict their performance. We recently tackled this obstacle by applying hydride anion (H^–) substitution, namely, SrTiO_3–<i>x</i>H_<i>x</i>. In this paper, in order to clarify the H^– substitution effect on electron and phonon scattering, we analyzed the temperature dependence of electronic and thermal transport properties of the SrTiO_3–<i>x</i>H_<i>x</i> bulks with different H^– concentrations <i>x</i> = 0.057–0.216. The carrier mobility was dominated by electron–electron scattering and impurity scattering; however, the GBs did not disturb the electron transport, and thus, the high σ approaching to 10⁴ S/cm at 4 K was realized in SrTiO_3–<i>x</i>H_<i>x</i> bulks. The H^– substitution concurrently suppressed the κ from 9.7 W/(mK) of SrTiO₃ to 5.0 W/(mK) of the SrTiO_3–<i>x</i>H_<i>x</i> bulk with <i>x</i> = 0.216 at room temperature. The phonon scattering by elastic strain field due to the largely different chemical bonding state of Ti-(O,H) bonds is found to be prominent for reducing κ. The H^– substitution approach would provide a possibility for developing environmentally benign thermoelectric oxides by the simultaneous realization of single-crystal-like electron transport and strong phonon scattering.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Conductive Bonding of Silver Electrodes on Ultrathin Polymer Films","authors":"Tatsuma Miyake,&nbsp;Masahito Takakuwa,&nbsp;Daishi Inoue,&nbsp;Daisuke Hashizume,&nbsp;Tomoyuki Yokota,&nbsp;Shinjiro Umezu,&nbsp;Kenjiro Fukuda* and Takao Someya*,&nbsp;","doi":"10.1021/acsaelm.4c0119710.1021/acsaelm.4c01197","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01197https://doi.org/10.1021/acsaelm.4c01197","url":null,"abstract":"<p >Integrating multiple flexible electronics using conductive bonding is essential for developing soft robotics and on-skin electronics. Increasing film thickness significantly reduces the flexibility of flexible electronics owing to increased bending stiffness. Therefore, direct electrode bonding is more suitable for fabricating flexible electronic systems than integration using a conductive adhesive layer. Atmospheric surface-activated bonding (SAB) is a room-temperature direct-bonding method between metals. However, atmospheric SAB of metal electrodes applicable to flexible devices with a root-mean-square roughness larger than that of silicon wafers is currently limited to using atmosphere-stable gold. This is because of the lack of a method for directly bonding unstable metal materials in ambient air without oxidation. To address this limitation, this study proposes a room-temperature direct conductive bonding in ambient air for a silver film fabricated on an ultrathin substrate using a water vapor plasma method. The 2 μm-thick evaporated silver film samples were directly bonded by analyzing the radical ration during water vapor plasma treatment and surface chemical state and physical state before and after treatment. Furthermore, direct bonding of dissimilar metals, silver and gold, was also achieved. The success of direct silver bonding was strongly correlated with the ratio of O radicals to OH radicals during plasma treatment, confirming bonding at a ratio of approximately 30% or less. The bonded silver thin-film samples exhibited high flexibility, with a minimum curvature radius of less than 0.5 mm at the bonding site and a resistance change rate of less than 6% after repetitive bending tests (1000 cycles).</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}