ACS Applied Electronic Materials最新文献_第10页

Intermolecular Interaction-Assisted Selective Sensing Using an MXene-Based Chemoresistive Sensor 基于mxene的化学阻性传感器的分子间相互作用辅助选择性传感

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-11 DOI: 10.1021/acsaelm.5c01095

Yan Hu, Longchao Yao*, Chenghang Zheng and Xiang Gao*,

{"title":"Intermolecular Interaction-Assisted Selective Sensing Using an MXene-Based Chemoresistive Sensor","authors":"Yan Hu, Longchao Yao*, Chenghang Zheng and Xiang Gao*, ","doi":"10.1021/acsaelm.5c01095","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01095","url":null,"abstract":"MXene, a family of two-dimensional (2D) layered materials, finds potential applications in gas sensors; however, sensors fabricated with pristine MXene generally suffer from poor selectivity. Herein, we demonstrate tunable selectivity in MXene-based sensors by modifying the surface functionality of MXene layers with 4-bromotriphenylamine (TPA) and 11-mercaptoundecanoic acid (MUA). The intermolecular interactions between analyte molecules and the functionalized MXene surface enable a tunable and selective response to hydrogen bond-rich molecules: MUA-MXene shows preferential sensitivity to methanol, whereas TPA-MXene exhibits an enhanced response to ammonia. Surface functionalization simultaneously improves both the response sensitivity and response time. Furthermore, our results reveal that surface-absorbed water plays a critical role in maintaining a stable gas response, particularly interflake water molecules that facilitate hydrogen bonding between MXene channels and gas molecules. We also developed a stretchable MXene-based ammonia sensor by integrating elastic substrates, stretchable electrodes, and TPA-MXene film. This sensor demonstrates remarkable and stable performance in detecting ammonia (100 to 1000 ppm of NH3 at 80% relative humidity) under mechanical strain, maintaining functionality under 40% parallel strain and 20% perpendicular strain over a two-month period. The robustness suggests potential applications in breath analysis.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7718–7725"},"PeriodicalIF":4.7,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect-Mediated Coexistence of Bipolar Switching and Negative Differential Resistance in Carbon Nanotube–PVA Memristors: Mechanistic Insights and Performance Tuning 碳纳米管- pva记忆电阻器中缺陷介导的双极开关和负差分电阻共存：机理见解和性能调整

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-09 DOI: 10.1021/acsaelm.5c01076

Feng Yang*, Yangmin Diao, Yongfang Jia, Dongheng Jiang, Jianwei Sun, Keyu Liu, Min Pan and Wensheng Song,

{"title":"Defect-Mediated Coexistence of Bipolar Switching and Negative Differential Resistance in Carbon Nanotube–PVA Memristors: Mechanistic Insights and Performance Tuning","authors":"Feng Yang*, Yangmin Diao, Yongfang Jia, Dongheng Jiang, Jianwei Sun, Keyu Liu, Min Pan and Wensheng Song, ","doi":"10.1021/acsaelm.5c01076","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01076","url":null,"abstract":"The integration of carbon nanotubes (CNTs) into polymer matrices has emerged as a promising strategy for developing high-performance memristors. In this study, we report a Ag/PVA–CNT/ITO memristor fabricated via spin coating and magnetron sputtering, where CNT-doped poly(vinyl alcohol) (PVA) serves as the functional layer. The dispersion of CNTs was optimized through annealing (500 °C, 40 min) followed by ultrasonication (4–6 h). Scanning electron microscopy (SEM) and Raman spectroscopy analyses confirmed reduced entanglement and an elevated defect density (ID/IG ratio increased from 0.65 to 0.75). The Ag/PVA–CNT/ITO devices exhibit coexistence of negative differential resistance (NDR) and bipolar resistive switching (RS) behaviors at room temperature. The optimized device demonstrates a resistive switching window of ∼20 over 130 cycles at ±1 V, with retention times exceeding 104 s. Comprehensive analysis of current–voltage (I–V) characteristics reveals that the NDR effect arises from electron tunneling mechanisms and the electron-caching properties of CNTs, while RS behavior is governed by the formation/breakage of Ag conductive filaments and space charge-limited conduction (SCLC). Notably, the theory of quantum wells and resonant tunneling can further explain the microscopic mechanism of NDR. These findings provide a foundation for next-generation nonvolatile memory and carbon nanotube electronic devices applications, leveraging the synergistic effects of CNT doping in polymer matrices to achieve multifunctional memristive behavior.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7705–7717"},"PeriodicalIF":4.7,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Germanium Incorporation on Electrical Properties and Photovoltaic Performance of Tin Germanium Sulfide Solar Cells 锗掺入对锡锗硫化太阳能电池电性能和光伏性能的影响

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-08 DOI: 10.1021/acsaelm.5c01130

Ayaka Kanai*, Daiki Motai, Ryodai Ichihara, Kunihiko Tanaka and Hideaki Araki,

{"title":"Effects of Germanium Incorporation on Electrical Properties and Photovoltaic Performance of Tin Germanium Sulfide Solar Cells","authors":"Ayaka Kanai*, Daiki Motai, Ryodai Ichihara, Kunihiko Tanaka and Hideaki Araki, ","doi":"10.1021/acsaelm.5c01130","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01130","url":null,"abstract":"This study investigated the effects of Ge incorporation on the electrical properties and photovoltaic performance of tin(II) sulfide (SnS) solar cells. The effect of Ge content (x) in Sn1–xGexS on its structural, optical, and electrical characteristics were analyzed. X-ray diffraction revealed that increasing the Ge content led to a decrease in the interplanar spacings, in accordance with Vegard’s law. The Sn1–xGexS solar cells exhibited enhanced photovoltaic performance with increasing x, reaching an optimal power conversion efficiency (η) of 1.39% at x = 0.37. The formation of Ge-related shallow defect levels that act as radiative recombination centers (RCs) and the suppression of crystal defects that act as nonradiative recombination centers (NRCs), due to the promotion of grain growth with Ge incorporation, could contribute to the improvement in η. However, a high Ge concentration leads to an increased number of NRCs and a reduction in RCs in thin films. Additionally, the current density and open circuit voltage decrease due to the worsening of the cliff structure, thereby decreasing the η of solar cells. These findings indicate that controlled Ge incorporation into SnS is a viable strategy for enhancing the solar cell performance, and the Sn1–xGexS alloy is a promising material for next generation solar cells.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7745–7754"},"PeriodicalIF":4.7,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistically Reinforced Bamboo Cellulose–Graphene Aerogel Sensors with Highly Elasticity and Strain Sensitivity 具有高弹性和应变敏感性的协同增强竹纤维素-石墨烯气凝胶传感器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-08 DOI: 10.1021/acsaelm.5c01129

Hairong Cai, Jiefeng Zheng, Jian Zhang, Wenfu Zhang, Ying Zhao, Anqi Wu, Jin Wang*, Shenjie Han* and Haiying Cai*,

{"title":"Synergistically Reinforced Bamboo Cellulose–Graphene Aerogel Sensors with Highly Elasticity and Strain Sensitivity","authors":"Hairong Cai, Jiefeng Zheng, Jian Zhang, Wenfu Zhang, Ying Zhao, Anqi Wu, Jin Wang*, Shenjie Han* and Haiying Cai*, ","doi":"10.1021/acsaelm.5c01129","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01129","url":null,"abstract":"Cellulose-based aerogels are particularly attractive for flexible sensors because of their interconnected porous networks, low density, and excellent compressibility, which enable effective deformation sensing and signal transmission. However, the widespread adoption of cellulose aerogels in strain sensing applications has been hindered by their limited compressibility and fatigue resistance. To address these challenges, this study developed composite aerogel sensors through a synergistic approach combining bamboo cellulose nanofibers (BCNFs) prepared via the TEMPO oxidation method with methyltrimethoxysilane (MTMS) modification and graphene oxide (GO) incorporation. The resulting BCNF/MTMS/reduced graphene oxide (rGO) aerogel was fabricated through an integrated process of freeze-drying and carbonization. The as-prepared piezoresistive sensor features an elastic, conductive porous structure with outstanding sensing capabilities, demonstrating high compression sensitivity (gauge factor can reach 2.45 under 20–30% strain). Furthermore, the sensor exhibits excellent performance in monitoring human joint movements, showcasing its potential as a high-performance flexible wearable strain sensor for next-generation health monitoring applications. This work provides a viable strategy for developing advanced cellulose-based aerogel sensors with enhanced mechanical and sensing properties.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7755–7765"},"PeriodicalIF":4.7,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetized Porous Structure Enabled Sensitivity-Enhanced Pressure Sensor for Tactile Perceptions 用于触觉感知的磁化多孔结构增强灵敏度压力传感器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-08 DOI: 10.1021/acsaelm.5c01098

Shijin Nie, Lincan Deng, Fang Xu, Xiaoke Wang, Yiming Wang, Yanpeng Lu, Yulong Deng, Mingjun Zou, Jin Yang, Hengyu Guo and Zhiming Lin*,

{"title":"Magnetized Porous Structure Enabled Sensitivity-Enhanced Pressure Sensor for Tactile Perceptions","authors":"Shijin Nie, Lincan Deng, Fang Xu, Xiaoke Wang, Yiming Wang, Yanpeng Lu, Yulong Deng, Mingjun Zou, Jin Yang, Hengyu Guo and Zhiming Lin*, ","doi":"10.1021/acsaelm.5c01098","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01098","url":null,"abstract":"Flexible magnetic pressure sensors have garnered considerable research interest due to their promising applications in electronic skin, soft robotics, and human–machine interfaces. However, developing such sensors with both high sensitivity and robust durability remains a significant challenge. In this study, we propose a flexible pressure sensor comprising a magnetized porous structural membrane and a microfabricated Hall sensor embedded within a flexible substrate, enabling precise pressure detection through magnetic field variations. Through optimization of the porous architecture, the proposed sensor achieves a 112% enhancement in sensitivity, exhibiting an exceptional magneto-mechanical coupling factor of 9.72 × 10–8 T·Pa–1 while maintaining high flexibility. The sensor demonstrates a broad pressure detection range (40 Pa to 1.86 MPa), an ultralow detection limit (40 Pa), and a rapid response time of 4 ms. Furthermore, we successfully implemented this pressure sensor in an intelligent tactile perception system for real-time human motion monitoring and human–machine interaction. The experimental results conclusively demonstrate the methodology’s potential as a versatile platform for next-generation wearable electronics, advanced prosthetics, and immersive interactive systems, opening possibilities in healthcare monitoring, robotic control, and augmented reality applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7726–7735"},"PeriodicalIF":4.7,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metallization of Titanium Nitride via Electrografted Nitrophenyl–Vinylpyridine Copolymer Seed Layer for Micro/Nano-Fabrication 电接硝基苯基-乙烯基吡啶共聚物种子层微纳米制备氮化钛金属化研究

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-07 DOI: 10.1021/acsaelm.5c01144

Gul Zeb, Xuan Truong Duong, Hongyan Wu and Xuan Tuan Le*,

{"title":"Metallization of Titanium Nitride via Electrografted Nitrophenyl–Vinylpyridine Copolymer Seed Layer for Micro/Nano-Fabrication","authors":"Gul Zeb, Xuan Truong Duong, Hongyan Wu and Xuan Tuan Le*, ","doi":"10.1021/acsaelm.5c01144","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01144","url":null,"abstract":"Ongoing advancements in the design and fabrication of semiconductor devices have prompted the exploration of chemical approaches for the metallization of titanium nitride (TiN), a uniquely conductive ceramic material, as alternatives to conventional, high-cost, physical-based deposition techniques. Although direct electrolytic deposition of thin metallic films onto TiN surfaces remains industrially impractical, electroless metallization using an amine-terminated seed layer presents a promising solution. In this study, a copolymer of 4-nitrophenyl and 4-vinylpyridine (a PVP-like film) is successfully electrografted onto the TiN surface via diazonium chemistry. The interaction between the resulting amine-terminated PVP-like seed layer and a PdCl2/HCl activator is throughout investigated to provide insight into the autocatalytic mechanism underlying the electroless nickel plating process. This process facilitates the formation of a compact, continuous nickel–boron (Ni–B) thin film. The electrolessly deposited Ni–B layer serves as a robust base for subsequent electrolytic copper deposition, enabling the effective filling of serpentine structures in silicon microdevices. Thus, this work introduces a fully aqueous metallization approach suitable for microelectromechanical systems (MEMS). More importantly, covalent bonding of the electrografted polymer, as confirmed by X-ray photoelectron spectroscopy (XPS), is discussed to elucidate the strong adhesion properties of the PVP-like/Ni–B/Cu multilayer stack on the TiN surface.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7791–7801"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-Ultraviolet-Induced Narrow-Band Emission Phosphors: Eu3+-Activated YCa4O(BO3)3 for Backlight-Display and White Light-Emitting Diodes 近紫外诱导窄带发射荧光粉：Eu3+活化yca40 (BO3)3用于背光显示和白光发光二极管

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-07 DOI: 10.1021/acsaelm.5c00853

Jina Ding*, Zhuo Tang, Huan Dong, Lanxiu Xiao and Jingyi Liu,

{"title":"Near-Ultraviolet-Induced Narrow-Band Emission Phosphors: Eu3+-Activated YCa4O(BO3)3 for Backlight-Display and White Light-Emitting Diodes","authors":"Jina Ding*, Zhuo Tang, Huan Dong, Lanxiu Xiao and Jingyi Liu, ","doi":"10.1021/acsaelm.5c00853","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00853","url":null,"abstract":"Developing red emission materials with high efficiency, good thermal stability, and high color purity remains a challenge for phosphor-converted light-emitting diodes (LEDs) and backlight displays. Herein, Eu3+-doped YCa4O(BO3)3 (YCOB) phosphors with narrow-band red light emission were designed to meet simultaneously the above targets. All samples have strong red emission with high color purity under near-ultraviolet (NUV) excitation. The temperature-related emission spectra showed that the synthesized phosphors presented great thermal-emission stability with an activated energy of 1.26 eV. Meanwhile, YCOB:15%Eu3+ had a high internal quantum yield (about 69.2%). The electric dipole–quadrupole interaction results in concentration quenching. The fabricated phosphor-converted LED emits warm white light with a high color rendering index (92.17) and a low correlated color temperature (4834 K), suggesting that the Eu3+-doped YCOB phosphors are promising candidates for white LEDs. This study provides new ideas for researchers to identify undiscovered high-efficiency phosphors by expanding the application range of nonlinear laser materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7585–7593"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning the Photoresponse of Flexible and Wearable SnO2-Based UV Sensors Using the Piezo-Phototronic Effect 利用压电光电子效应调节柔性可穿戴sno2基UV传感器的光响应

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-07 DOI: 10.1021/acsaelm.5c01396

Rajesh Mandal*, Subhamay Pramanik, Probodh K Kuiri, Biswanath Mukherjee and Rajib Nath*,

{"title":"Tuning the Photoresponse of Flexible and Wearable SnO2-Based UV Sensors Using the Piezo-Phototronic Effect","authors":"Rajesh Mandal*, Subhamay Pramanik, Probodh K Kuiri, Biswanath Mukherjee and Rajib Nath*, ","doi":"10.1021/acsaelm.5c01396","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01396","url":null,"abstract":"Piezo-phototronic devices based on wide bandgap oxide materials are extremely useful for wearable optoelectronic devices, as their optical and electrical characteristics can be easily tuned by external strain. Herein, we fabricated a flexible ultraviolet (UV) photodetector (PD) by depositing a thin film of SnO2 nanoparticles onto a poly(ethylene terephthalate) (PET) substrate using a simple chemical coating method. The SnO2 film demonstrated strong UV absorption at around 335 nm and good transparency (∼80%) in the visible region (400–800 nm). The PD device exhibited excellent strain-induced photoresponse modulation in the UV region (275 nm) with photo-to-dark current ratio of up to ∼1.01 × 104 and a responsivity of 0.745 A/W at 1 V under a tensile strain of 9%. The device exhibited an excellent reversible and reproducible photoresponse following the number of bending operations (∼103 times). The device’s response time remained unaffected by the applied external strain, ensuring its reliability for multiple operations. The observed modulation in the photoresponse is attributed to strain-induced modifications in the Schottky barrier height (−15 to 60 meV) at the Au/SnO2 interface, which affected the width of the depletion region and enhanced charge carrier collection efficiency at the electrodes. The realization of strain-induced enhancement in the performance of UV photodetectors based on metal oxide optoelectronic devices through the piezo-phototronic effect is the primary objective of this work, paving the way for next-generation wearable oxide-based optoelectronics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7924–7932"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the Thermal Stability and Mechanical Endurance of a Titanium-Doped Germanium Antimony Thin Film for Flexible Nonvolatile Memory Application 用于柔性非易失性存储器的掺钛锗锑薄膜的热稳定性和机械耐久性研究

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-07 DOI: 10.1021/acsaelm.5c01436

Yu Li, Weihua Wu*, Zhengquan Zhou, Zhichao Qi, Xinyu Wang, Li Li and Jiwei Zhai*,

{"title":"Exploring the Thermal Stability and Mechanical Endurance of a Titanium-Doped Germanium Antimony Thin Film for Flexible Nonvolatile Memory Application","authors":"Yu Li, Weihua Wu*, Zhengquan Zhou, Zhichao Qi, Xinyu Wang, Li Li and Jiwei Zhai*, ","doi":"10.1021/acsaelm.5c01436","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01436","url":null,"abstract":"The inherent limitations of silicon-based memory lie in rigid structural constraints and poor mechanical bendability, which have stimulated the growing research interest in exploring flexible memory technologies. We proposed the enhanced flexibility Ti-doped Ge1Sb9 phase-change materials, which were deposited on a polyimide substrate by the magnetron sputtering method. The thermal stability, mechanical bendability, surface morphology, and electrical properties of the Ti-doped Ge1Sb9 materials were systematically investigated. Compared with the pure Ge1Sb9, Ti-doped Ge1Sb9 films possess superior thermal stability and mechanical bendability. The film resistance remains almost unchanged after multiple bending cycles, indicating the excellent robust self-healing characteristic. This may be due to the more uniform stress distribution within the material, inhibiting the permanent structural damage and maintains resistance stability. Flexible phase-change memory devices based on Ti0.05(Ge1Sb9)0.95 films were fabricated, which can complete the reliable SET/RESET operations in both flat and bending states. All the results confirm the potential of the Ti-doped Ge1Sb9 film for flexible memory application, featuring the outstanding thermal stability, remarkable mechanical robustness, stable electrical switching, and low power consumption.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7940–7950"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization and Validation of the Thermochromic Performance of a Trilayer Coating of TiO2/VO2/TiO2 for Smart Windows 智能窗用TiO2/VO2/TiO2三层涂层热致变色性能的优化与验证

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-08-06 DOI: 10.1021/acsaelm.5c01043

Martin Becker*, Yan Ravil Wollenweber-Bienerth, Saskia Hartmann, Angelika Polity, Sangam Chatterjee and Peter J. Klar,

{"title":"Optimization and Validation of the Thermochromic Performance of a Trilayer Coating of TiO2/VO2/TiO2 for Smart Windows","authors":"Martin Becker*, Yan Ravil Wollenweber-Bienerth, Saskia Hartmann, Angelika Polity, Sangam Chatterjee and Peter J. Klar, ","doi":"10.1021/acsaelm.5c01043","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01043","url":null,"abstract":"Global energy consumption and the imperative to mitigate climate change have driven the exploration of innovative technologies to enhance energy efficiency in buildings. Among these, smart windows utilizing thermochromic vanadium dioxide-based materials as active materials have emerged as a promising avenue. These windows dynamically modulate their optical properties in response to environmental conditions, helping to reduce the energy consumption for heating/cooling of the building. However, the practical implementation of VO2-based smart windows faces challenges related to optimizing their performance and durability. In this context, this review advocates for further research into VO2-based smart windows incorporating titanium dioxide (TiO2) buffer layers and TiO2 antireflection (AR) coatings. Rutile TiO2 buffer layers are used to promote growth of the VO2 functional films. Additionally, TiO2 antireflection coatings can improve the optical performance of smart windows by minimizing reflections and maximizing light transmission. This work highlights how TiO2-based layers may be used to form a multilayer system surrounding the active VO2 layer in order to enhance the efficiency of VO2-based smart windows. The proposed application of rutile TiO2 buffer layers and anatase TiO2 AR layers holds promise for advancing the development of energy-efficient building technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7668–7678"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01043","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0