ACS Applied Electronic Materials最新文献

{"title":"Electrochemical Doping and Electronic Phase Transition of Thin-Film Perovskite LaNiO3 at Room Temperature","authors":"Yibo Sun,&nbsp;Yuxi Zheng,&nbsp;Mohan Zhao,&nbsp;Xuefeng Zhang,&nbsp;Gang Li,&nbsp;Xiaofei Guan","doi":"10.1021/acsaelm.6c01417","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01417","url":null,"abstract":"<p>Rare-earth nickelates (<em>R</em>NiO₃) offer great promise for applications in emergent electronic devices owing to their tunable electrical properties. LaNiO₃ offers processing and operational advantages over heavier <em>R</em>NiO₃ due to its easier synthesis and superior stability. However, the experimental exploration of modulation strategies and the mechanistic understanding of electronic phase transition in thin-film LaNiO₃ remain incomplete. Herein, we demonstrate the electrochemical doping of cations (Li⁺, Zn²⁺, Mg²⁺, and Al³⁺) with different radii and valence states into LaNiO₃ thin films prepared by magnetron sputtering and air annealing. A significant increase of resistivity was observed upon ion intercalation into LaNiO₃ under a positive gate voltage (3 V). X-ray photoelectron spectroscopy (XPS) and synchrotron radiation-based X-ray absorption near-edge structure (XANES) have been conducted to unveil the effect of electrochemical doping on the electronic structure change. Specifically, the peak intensity ratio change of Ni L-edge XAS confirms the reduction of the nominal valence of nickel from +3 to +2 after electrochemical doping. The decrease of the relative intensity of the oxygen K-edge pre-edge also confirms the increased electron occupation in Ni 3d–O 2p orbitals and suggests enhanced electron localization. Moreover, first-principles density functional theory (DFT) calculations reveal that the metal–insulator transition of LaNiO₃ was attributed more to the Coulombic repulsion caused by electron doping rather than to the structure distortion.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8011–8022"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible All-Fabric Pressure Sensors with Ultra-High Sensitivity and Wide Detection Range Fabricated via DIW-Printed AgNW Electrodes and AgNW/MXene Sensing Layers","authors":"Xinpeng Wang,&nbsp;Jiajun Huang,&nbsp;Zhijie Ye,&nbsp;Shihao Yang,&nbsp;Tingting Fu,&nbsp;Xianmou Guo,&nbsp;Bowen Li,&nbsp;Qi Yu,&nbsp;Yuehui Wang,&nbsp;Li Jingze","doi":"10.1021/acsaelm.6c01286","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01286","url":null,"abstract":"<p>Flexible wearable pressure sensors are crucial for personalized healthcare but suffer from inherent limitations: the “sensitivity-range trade-off” and the challenge of balancing sensing performance with textile breathability and comfort. To overcome these issues, a bilayer all-fabric piezoresistive sensor is developed by integrating direct ink writing and stepwise dip-coating to fabricate AgNW interdigital electrodes and an AgNW/MXene-coated sensing fabric, respectively. By leveraging the synergistic “point-line-surface” conductive architecture and the structural resilience of the knitted substrate, the sensor effectively resolves the conflict between high sensitivity and a wide detection range. It exhibits segmented high sensitivity: 1.29 × 10⁸ (0–0.1 kPa), 1.19 × 10⁷ (0.1–4 kPa), 9.19 × 10⁵ (4–25 kPa), 4.15 × 10⁵ (25–55 kPa), and 1.68 × 10⁵ kPa^–1 (55–120 kPa). It also boasts a broad working range up to 120 kPa, an ultra-low detection limit of 0.3 Pa, and rapid response/recovery times (18/39 ms). Practical validation confirms its versatility in full-range human motion monitoring from subtle physiological pulses to vigorous joint movements and advanced human–machine interaction, such as intelligent Morse code transmission and real-time mouse control. This work provides a versatile strategy for fabricating high-performance textile-based sensors, offering great potential for next-generation smart wearables and integrated health monitoring systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7883–7898"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Stage Crossover of Resistivity with Temperature in a Highly Conductive MBene Hf2B2","authors":"Weiyi Xu,&nbsp;Haoyu Luo,&nbsp;Lanting Feng,&nbsp;Guodong Yu","doi":"10.1021/acsaelm.6c01317","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01317","url":null,"abstract":"<p>As a class of two-dimensional materials, MBenes have attracted increasing interest due to their high electrical conductivity. Using first-principles calculations combined with the Boltzmann transport equation, we investigate the intrinsic charge transport in orthorhombic 5d-based Hf₂B₂. The room-temperature 2D conductivity reaches 7.41 mS/□, comparable to most known MBenes and MXenes. At 20 K and the high-temperature limit (more than 1500 K), the resistivity follows <em>T</em>^3.7 and <em>T</em>¹ power laws, respectively. The local exponent <em>n</em>(<em>T</em>) = dln ρ_2D/d ln <em>T</em> reveals a two-stage crossover separated by a characteristic temperature <em>T</em>_M = 93 K: below <em>T</em>_M, <em>n</em>(<em>T</em>) decreases rapidly from 3.7 to about 1.5; above <em>T</em>_M, it slowly approaches 1. Our results demonstrate that the rapid decrease originates from the low-frequency phonons below the phonon gap, whereas the slow decrease arises from the additional activation of high-frequency phonons above the phonon gap.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7935–7942"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neuromorphic Visual Perception through Multifunctional Lead-Free Perovskite Sensory Neurons","authors":"Panagiotis Bousoulas,&nbsp;Spyros Orfanoudakis,&nbsp;Chalalampos Tsioustas,&nbsp;Angelos Galanos,&nbsp;Nikolaos Zacharopoulos,&nbsp;Thomas Stergiopoulos,&nbsp;Dimitris Tsoukalas","doi":"10.1021/acsaelm.6c01556","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01556","url":null,"abstract":"<p>Multifunctional artificial neurons capable of simultaneously sensing and processing optical information are highly desirable for next-generation neuromorphic vision systems. Here, we report a lead-free optoelectronic sensory neuron based on volatile memristors employing the mixed organic–inorganic perovskite (PDA)BiI₅ and nanoparticle-engineered interfaces. Soft-landed Ag nanoparticles (NPs) were incorporated into the device structure to promote controlled conductive filament formation (CF) and improve switching reliability without damaging the active layer. Compared with reference devices, the optimized memristors exhibited forming-free volatile switching, a memory window exceeding 10⁵, low operating voltages (&lt;0.5 V), and pulse endurance beyond 10⁹ cycles, representing one of the highest endurance values reported for lead-free perovskite memristors. A physics-based numerical model was further employed to elucidate the switching mechanism and the role of the nanoparticle interfaces. By integrating the volatile memristor into a simple RC circuit, low-power optoelectronic leaky integrate-and-fire neurons were realized, exhibiting an energy consumption of only ∼50 nJ per spike. Owing to the transparent device architecture, neuronal operation could be controlled through optical stimulation. The proposed neurons demonstrated multifunctional perception capabilities by encoding optical wavelength, illumination intensity, and incident angle into distinct temporal spike trains. Selective responses were obtained under RGB illumination (470, 530, and 630 nm), different optical power densities, and varying illumination directions. These results establish nanoparticle-engineered lead-free perovskite memristors as promising building blocks for energy-efficient neuromorphic vision systems and future bioinspired artificial intelligence hardware.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8111–8122"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Core–Shell MWCNTs/TPU Fibers Enable Regionally Decoupled Sensing for Imperceptible Sleep Posture Monitoring and Gesture Decoupling","authors":"Xiaoqi Huang,&nbsp;Han Li,&nbsp;Yujun Xu,&nbsp;Dandan Chen,&nbsp;Yutian Sun,&nbsp;Yiyu Song,&nbsp;Zhefei Li,&nbsp;Jialiang Lu","doi":"10.1021/acsaelm.6c01116","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01116","url":null,"abstract":"<p>Wearable flexible sensing is advancing toward lightweight, integrated multimodal systems, where fiber–based conductive materials exhibit excellent flexibility, weavability, and biocompatibility. However, single–structure sensing units face narrow response dimensions, hard–to–resolve overlapping deformation signals, and incomplete application loops. Herein, core–shell structured MWCNTs/TPU composite sensing (CTS) fibers are fabricated via coaxial wet spinning using MWCNTs as the conductive phase and TPU as the matrix. These fibers exhibit excellent mechanical stability and high sensitivity: they retain conductive networks after 1600 tensile cycles, achieve a gauge factor of 1878.71 at 250–350% strain, and reach a conductivity of 9.11 S·m^–1. Meanwhile, three distinct sensing elements—plain weave (PW), four–strand diagonal braided structure (FDBS), and four-strand same–mat wrapped structure (FSWS)—were woven from the CTS fibers and serially connected to form a multistructure cooperative sensing unit. Integrating the sensing unit into a pillowcase enables imperceptible signal acquisition of sleep posture resistance variation, followed by wireless transmission to the MultiSense APP. Based on the exported data, the dynamic time warping (DTW) algorithm is adopted to accurately recognize and count left–right lateral lying postures. Moreover, attaching the unit to the palm collects hybrid gesture signals; benefiting from the differential deformation response of the three fabric structures, the proposed Inception-BiLSTM–based IBA–PDN model quantifies the relative contribution of nine signal feature components corresponding to distinct structure–deformation combinations and identifies the dominant deformation mode from overlapping hybrid waveforms. This work establishes a complete technical framework from material preparation to terminal application, showing great potential in sleep monitoring and human–computer interaction.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7801–7814"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Four-Layer Cellulose-Based Composite Films with High Thermal Conductivity and Electromagnetic Absorption Shielding via Vacuum Filtration and Subsequent Spin-Coating","authors":"Yuru Liao,&nbsp;Luyan Huang,&nbsp;Xinghua Jiang,&nbsp;Jianhua Guo","doi":"10.1021/acsaelm.6c01450","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01450","url":null,"abstract":"<p>Driven by the trend toward high integration and power density of modern electronic devices, heat accumulation and electromagnetic interference (EMI) have emerged as pressing issues. In this work, an asymmetric four-layer cellulose-based composite film was fabricated via vacuum filtration and spin-coating. The film is structured with bilateral BN/CMC thermal conductive insulating layers, a middle MXene/CMC conductive reflective layer, and an FeSiAl/CMC magnetic absorption layer, combining high thermal conductivity with absorption-dominated EMI shielding performance. Spin-coating parameters and FeSiAl loading were found to greatly affect film performance. Raising the spin speed from 1500 to 2500 rpm optimizes the orientation of BN and FeSiAl flakes. With FeSiAl content increasing from 100 to 300 phr, thermal conductivity and EMI shielding effectiveness (SE) increase continuously. The optimal performance is obtained at 2000 rpm, 10 s spin time with the addition of 300 phr FeSiAl. The corresponding film exhibits an in-plane thermal conductivity of 10.51 W·m^–1·K^–1, an EMI SE of 56.2 dB, and an average absorption coefficient of 0.52, well meeting the criteria for absorption-dominated EMI shielding. The film also shows excellent flame retardancy, electrical insulation, and mechanical properties, rendering it highly versatile, thereby providing a strategy for developing flexible thermally conductive EMI shielding composites.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8044–8059"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3-Phenylisoquinoline Ligand-Driven Enhanced Triplet Emission in an Ir(III) Phosphor Enabling High-Efficiency in Orange and Hybrid White OLEDs","authors":"Md Intekhab Alam,&nbsp;Upasana Deori,&nbsp;Malati Das,&nbsp;Jyothis Dharaniyedath,&nbsp;Bhaskar Chelleng,&nbsp;Parthasarathy Gandeepan,&nbsp;Pachaiyappan Rajamalli","doi":"10.1021/acsaelm.6c00935","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00935","url":null,"abstract":"<p>We report the synthesis, photophysical properties, and electroluminescent performance of a Ir(3-phenylisoquinoline)₃ (Ir(3-piq)₃) complex. Single-crystal X-ray analysis reveals a distorted octahedral geometry with strong intermolecular interactions that enforce rigid molecular packing and abate nonradiative decay by reducing structural reorganization. Photophysical investigations reveal weak orange emission in solution and significantly enhanced emission in doped films. Optimized organic light-emitting diodes (OLEDs) achieve a low turn-on voltage of 2.5 V, a maximum external quantum efficiency (EQE_max) of 22.8%, and a brightness of 49616 cd/m² with stable electroluminescence. Moreover, hybrid white OLEDs were fabricated by incorporating the blue TADF emitter, 3DPy-<em>p</em>DTC as an auxiliary dopant. The fabricated devices exhibit warm-white emission at 0.7 wt % doping of Ir(3-piq)₃, delivering EQE_max of 17.7%. Notably, reducing the doping concentration of Ir(3-piq)₃ to 0.5 wt % results in a well-balanced bright white emission with CIE co-ordinate of (0.29, 0.33) and achieves an EQE_max of 14.7%. These performances are attributed to efficient exciton utilization driven by synergistic phosphorescence and rapid reverse intersystem crossing in TADF emitters. Overall, this work demonstrates an effective strategy for achieving high-efficiency and stable orange emission in Ir-complexes and color-tunable hybrid white OLEDs through synergistic exciton management.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 17","pages":"7357–7368"},"PeriodicalIF":4.7,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148923706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic-Response-Regulated Impedance Matching and Distributed Microwave Absorption in Co−Fe/Epoxy Composites","authors":"Shaokang Liu,&nbsp;Weicheng Liao,&nbsp;Pinchen Luo,&nbsp;Mengchen Jin,&nbsp;Tangming Yan,&nbsp;Xing Zhao,&nbsp;Qingshan Wang","doi":"10.1021/acsaelm.6c01331","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01331","url":null,"abstract":"<p>Efficient polymer-based microwave absorbers require incident waves to enter the material and then be sufficiently attenuated inside the absorber. This balance is difficult to achieve when design relies only on high dielectric loss. Here, Co−Fe/epoxy (Co−Fe/EP) composites are used as a dual-magnetic model platform in which the Co/Fe ratio regulates magnetic storage, magnetic loss, interfacial polarization, and input impedance while the epoxy matrix maintains a moderate dielectric response. The optimized composites exhibit an effective absorption bandwidth of up to 6.42 GHz and a minimum reflection loss of −54.04 dB at millimeter-scale thicknesses. A numerical magnetic-parameter reconstruction and sensitivity-analysis framework is established using the measured permittivity and reconstructed permeability. The reconstructed response agrees closely with the measured-parameter result, giving an RL root-mean-square error of 0.286 dB. Removing the magnetic response or setting μ″ to zero eliminates the effective absorption region, whereas independent tuning shows that μ″ mainly regulates attenuation intensity and μ′ controls peak migration and the input-impedance trajectory. Area-based analysis further demonstrates that effective broadband absorption is associated with the overlap of impedance-matching and attenuation regions rather than with the maximum of any single loss parameter. Density functional theory calculations support Co−Fe interfacial d-orbital coupling and localized charge redistribution as microscopic origins of interfacial polarization. These results establish a reproducible magnetic-response-regulated framework for balancing wave accessibility and internal attenuation in epoxy-based absorbers.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 17","pages":"7617–7627"},"PeriodicalIF":4.7,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148923753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic GaN-Based MOS-HEMT and UV-LED Transmitter for Ultraviolet Communication","authors":"Haocheng Zhao,&nbsp;Weng-Hooi Tan,&nbsp;Nor Syafiqah Azmi,&nbsp;Amirul Firdaus,&nbsp;Muhammad Farizuan,&nbsp;Hiroshi Kawarada,&nbsp;Norzaini Zainal,&nbsp;Tao Tao,&nbsp;D. Nirmal,&nbsp;Shaili Falina,&nbsp;Mohd Syamsul","doi":"10.1021/acsaelm.6c00867","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00867","url":null,"abstract":"<p>Wireless optical communication operating in the ultraviolet band has received widespread attention due to its secure data transmission and solar-blind characteristics. However, the performance of conventional transmitters is restricted by interconnect parasitic circuit effects, and incorporating InGaN within any epitaxial layer inevitably provokes severe lattice mismatches and subsequent crystalline degradation. Building upon our experimental development of high-performance standalone MOS-HEMTs and InGaN UV-LEDs, this work explores a monolithically integrated device constructed entirely utilizing the AlGaN/GaN system to circumvent these electrical and material bottlenecks. Rigorous TCAD simulations reveal that incorporating a recessed-gate MOS-HEMT with an Al₂O₃ dielectric layer successfully blocks vertical electron tunneling and resolves the current collapse observed in Schottky gate designs. The device exhibits an on-resistance of 22.51 Ω·mm and a stable maximum drain current density exceeding 400 mA/mm delivered to the series optical emitter. Benefiting from the engineered dielectric isolation, the integrated device achieved a cutoff frequency of 656 MHz and a maximum oscillation frequency of 495 MHz. More interestingly, we found that under large-signal modulation, the device maintains synchronized electro-optical tracking up to 50 MHz, preserving over 90% of the initial amplitude swing. These dynamic evaluations correspond to an electrical current stabilization within 5 ns and a roughly estimated optical modulation bandwidth of 16 MHz. Ultimately, we demonstrate a robust monolithic integration strategy for UV optical transmitters, providing a theoretical foundation for next-generation wireless communication systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 17","pages":"7343–7356"},"PeriodicalIF":4.7,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148923758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and Photodetector Properties of Si/ZnO/HfO2 Heterostructures Formed by Internal Oxidation under Controlled Environment","authors":"Jay Sharma,&nbsp;Aditi Paliwal,&nbsp;Tamaghna Maitra,&nbsp;Satyaban Bhunia","doi":"10.1021/acsaelm.6c00864","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00864","url":null,"abstract":"<p>This study presents a comparative analysis of Si/ZnO/HfO₂ heterostructures formed by annealing metallic Zn deposited beneath HfO₂ in oxygen and nitrogen atmospheres. It investigates oxidation behavior, structural transformations, defect dynamics, and the fabrication of a photodetector based on the grown material. We systematically examined the thermal evolution of the heterostructure using in situ X-ray diffraction (XRD), with particular emphasis on the Zn-to-ZnO conversion and associated changes in lattice parameters and thermal expansion characteristics. Zn transforms into wurtzite ZnO at approximately 450 °C under an N₂ atmosphere through diffusion of lattice O₂ from HfO₂, whereas the same occurs at around 400 °C in an O₂ atmosphere due to accelerated oxidation. X-ray photoelectron spectroscopy (XPS) confirms oxygen migration under N₂ conditions, resulting in sub-stoichiometric HfO₁.₁₇, while O₂ annealing maintains HfO₁.₇₂ stoichiometry and facilitates more pronounced oxidation. Photoluminescence analysis indicates enhanced excitonic emission and diminished defect states in samples annealed under N₂, contrasted by increased defect-related luminescence and stronger exciton–phonon coupling following O₂ annealing. These variations significantly impact device performance: the device annealed in N₂ demonstrates superior response at a wavelength of 488 nm, attributed to efficient excitonic recombination, whereas the O₂-annealed device exhibits improved detection at 514 nm, driven by defect-assisted photogating mechanisms. This study highlights an annealing-atmosphere-dependent trade-off between excitonic purity and defect-mediated response and demonstrates that internal oxidation from HfO₂ enables high-quality ZnO without external oxygen for tunable optoelectronic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 17","pages":"7310–7324"},"PeriodicalIF":4.7,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148923793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}