ACS Applied Electronic Materials最新文献

{"title":"Polarity Flipping in SnSe Empowering Wavelength Selective Self-Powered Broadband Photodetection","authors":"Preeti Goswami, Pukhraj Prajapat, Pargam Vashishtha, Preetam Singh, Akhilesh Pandey, Govind Gupta","doi":"10.1021/acsaelm.4c00983","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00983","url":null,"abstract":"The demand for high-performance self-powered photodetectors with broadband wavelength selectivity has intensified due to their applications in various fields such as imaging, sensing, communication, and environmental monitoring. Among emerging materials, tin selenide (SnSe) has garnered significant attention for its promising optoelectronic properties. In this study, we have investigated the phenomenon of polarity flipping in sputtering-grown pure SnSe film and its impact on broadband wavelength selective photodetection. The designed metal semiconductor metal device with an active area of 9 μm² exhibits a maximum responsivity of 10.82 mAW^–1, a high external quantum efficiency of 378.76%, and the lowest noise equivalent power of 5.3 × 10^–13 WHz^–1/2 for 1064 nm light illumination of optical power 16.2 nW in self-bias mode. The proposed pure SnSe-based device exhibits wavelength-dependent polarity switching in self-bias mode for the spectral range UV–NIR, enabling the device to function in bidirectional mode. The polarity flipping response in the photodetector makes it possible to differentiate between different photons, such as ultraviolet/visible and near-infrared. This capability can improve the accuracy and efficiency of environmental monitoring systems, enabling better detection and analysis of various environmental factors, such as light pollution, radiation levels, and atmospheric composition. We elucidated the possible phenomenon underlying polarity flipping through a comprehensive characterization of the material’s structural, optical, and electrical properties. Our findings reveal that the controlled phase during sputter deposition can significantly alter the crystalline structure, resulting in tunable optical properties and enhanced photoresponse across a broad wavelength range. Additionally, the polarity flipping phenomenon enables the photodetector to exhibit unprecedented broadband wavelength selectivity, thus opening avenues for developing advanced optoelectronic devices. This research advances our fundamental understanding of phase-controlled SnSe thin film and paves the way for designing and fabricating highly efficient self-powered photodetectors with tailored spectral response characteristics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer","authors":"Shalu Saini, Anurag Dwivedi, Anil Lodhi, Arpit Khandelwal, Shree Prakash Tiwari","doi":"10.1021/acsaelm.4c01130","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01130","url":null,"abstract":"In this work, a unique composite of a polymer and two-dimensional material (PVP:MoSe₂) is demonstrated as a potential resistive switching layer for flexible resistive random-access memory (RRAM) devices, exhibiting multilevel switching. Fabricated flexible RRAM devices exhibit forming-free and excellent resistive switching with low SET and RESET voltages (0.7 V/∼−1 V), high DC endurance of more than 1000 cycles, and an excellent retention time of 10⁴ seconds with decent <i>I</i>_ON<i>/I</i>_OFF (∼10³). These devices exhibit multilevel resistive switching for 2-bit storage (four levels), by tuning the compliance current values, which can be the simplest way to achieve this functionality. Moreover, these devices exhibit high stability in performance upon bending, as explored up to a low bending radius of 7 mm. Our results indicate that the composites of PVP and MoSe₂, a rarely explored transition metal dichalcogenide, can be a great choice as switching layer for flexible electronics. Further, this study also opens up a direction for exploration of other unique material combinations for switching layers toward application in multibit storage, as it may contribute to low-cost, high-density, and nonvolatile flexible RRAM devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multilevel Resistive Switching in Flexible RRAM Devices with a PVP:MoSe2 Active Layer","authors":"Shalu Saini,&nbsp;Anurag Dwivedi,&nbsp;Anil Lodhi,&nbsp;Arpit Khandelwal and Shree Prakash Tiwari*,&nbsp;","doi":"10.1021/acsaelm.4c0113010.1021/acsaelm.4c01130","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01130https://doi.org/10.1021/acsaelm.4c01130","url":null,"abstract":"<p >In this work, a unique composite of a polymer and two-dimensional material (PVP:MoSe₂) is demonstrated as a potential resistive switching layer for flexible resistive random-access memory (RRAM) devices, exhibiting multilevel switching. Fabricated flexible RRAM devices exhibit forming-free and excellent resistive switching with low SET and RESET voltages (0.7 V/∼−1 V), high DC endurance of more than 1000 cycles, and an excellent retention time of 10⁴ seconds with decent <i>I</i>_ON<i>/I</i>_OFF (∼10³). These devices exhibit multilevel resistive switching for 2-bit storage (four levels), by tuning the compliance current values, which can be the simplest way to achieve this functionality. Moreover, these devices exhibit high stability in performance upon bending, as explored up to a low bending radius of 7 mm. Our results indicate that the composites of PVP and MoSe₂, a rarely explored transition metal dichalcogenide, can be a great choice as switching layer for flexible electronics. Further, this study also opens up a direction for exploration of other unique material combinations for switching layers toward application in multibit storage, as it may contribute to low-cost, high-density, and nonvolatile flexible RRAM devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CeOx-Mesoporous Silica Nanoparticle Antioxidants to Enhance the Stability of Organic Photovoltaic Devices","authors":"Eul-Yong Shin, Yeongseop Lee, Ho Young Kim, So Hyun Park, Yongseok Jun, Jin Young Kim, Hae Jung Son","doi":"10.1021/acsaelm.4c00867","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00867","url":null,"abstract":"Mitigating ultraviolet exposure-induced photodegradation remains a critical challenge to the long-term stability of organic photovoltaics (OPVs). Here, we improved the stability of the OPV device by introducing an antioxidant interlayer composed of nanocrystalline ceria supported on mesoporous silica nanoparticles (CeO_<i>x</i>-MSN). The CeO_<i>x</i> nanocrystals within the CeO_<i>x</i>-MSN exhibited a high density of oxygen vacancies and a large ratio of Ce(III) chemical states known to scavenge reactive oxygen species. Optimizing the particle size of the CeO_<i>x</i> nanocrystals further enhanced the ratio of Ce(III) states, enabling superior radical scavenging efficacy in methyl violet degradation tests compared with commercial CeO_<i>x</i> nanostructures. The OPV performance test confirmed that the optimized CeO_<i>x</i>-MSN (CeO_<i>x</i>-MSN_S) can scavenge radicals without a degradation in initial performance under one-sun illumination. More importantly, the photostability test revealed that the OPV device with CeO_<i>x</i>-MSN_S retained 73% of initial performance while the conventional device retained only 54%, corroborating the excellent radical scavenging efficacy of CeO_<i>x</i>-MSN_S.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pseudosymmetry in Tetragonal Perovskite SrIrO3 Synthesized under High Pressure","authors":"Haozhe Wang, Alberto de la Torre, Joseph T. Race, Qiaochu Wang, Jacob P. C. Ruff, Patrick M. Woodward, Kemp W. Plumb, David Walker, Weiwei Xie","doi":"10.1021/acsaelm.4c01214","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01214","url":null,"abstract":"In this study, we report a tetragonal perovskite structure of SrIrO₃ (<i>P</i>4/<i>mmm</i>, <i>a</i> = 3.9362(9) Å, <i>c</i> = 7.880(3) Å) synthesized at 6 GPa and 1400 °C, employing the ambient pressure monoclinic SrIrO₃ with distorted 6<i>H</i> structure as a precursor. The crystal structure of tetragonal SrIrO₃ was evaluated on the basis of single-crystal and powder X-ray diffraction. A cubic indexing was observed, which was attributed to overlooked superlattice reflections. Weak fractional peaks in the H and K dimensions suggest possible structure modulation by oxygen defects. Magnetization study reveals weak paramagnetic behavior down to 2 K, indicative of the interplay between spin–orbit coupling, electron correlations, and the crystal electric field. Additionally, measurements of electrical resistivity display metallic behavior with an upturn at about 54 K, which is ascribed to weak electron localization and possible structural defects.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pseudosymmetry in Tetragonal Perovskite SrIrO3 Synthesized under High Pressure","authors":"Haozhe Wang,&nbsp;Alberto de la Torre,&nbsp;Joseph T. Race,&nbsp;Qiaochu Wang,&nbsp;Jacob P. C. Ruff,&nbsp;Patrick M. Woodward,&nbsp;Kemp W. Plumb,&nbsp;David Walker and Weiwei Xie*,&nbsp;","doi":"10.1021/acsaelm.4c0121410.1021/acsaelm.4c01214","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01214https://doi.org/10.1021/acsaelm.4c01214","url":null,"abstract":"<p >In this study, we report a tetragonal perovskite structure of SrIrO₃ (<i>P</i>4/<i>mmm</i>, <i>a</i> = 3.9362(9) Å, <i>c</i> = 7.880(3) Å) synthesized at 6 GPa and 1400 °C, employing the ambient pressure monoclinic SrIrO₃ with distorted 6<i>H</i> structure as a precursor. The crystal structure of tetragonal SrIrO₃ was evaluated on the basis of single-crystal and powder X-ray diffraction. A cubic indexing was observed, which was attributed to overlooked superlattice reflections. Weak fractional peaks in the H and K dimensions suggest possible structure modulation by oxygen defects. Magnetization study reveals weak paramagnetic behavior down to 2 K, indicative of the interplay between spin–orbit coupling, electron correlations, and the crystal electric field. Additionally, measurements of electrical resistivity display metallic behavior with an upturn at about 54 K, which is ascribed to weak electron localization and possible structural defects.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01214","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarity Flipping in SnSe Empowering Wavelength Selective Self-Powered Broadband Photodetection","authors":"Preeti Goswami,&nbsp;Pukhraj Prajapat,&nbsp;Pargam Vashishtha,&nbsp;Preetam Singh,&nbsp;Akhilesh Pandey and Govind Gupta*,&nbsp;","doi":"10.1021/acsaelm.4c0098310.1021/acsaelm.4c00983","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00983https://doi.org/10.1021/acsaelm.4c00983","url":null,"abstract":"<p >The demand for high-performance self-powered photodetectors with broadband wavelength selectivity has intensified due to their applications in various fields such as imaging, sensing, communication, and environmental monitoring. Among emerging materials, tin selenide (SnSe) has garnered significant attention for its promising optoelectronic properties. In this study, we have investigated the phenomenon of polarity flipping in sputtering-grown pure SnSe film and its impact on broadband wavelength selective photodetection. The designed metal semiconductor metal device with an active area of 9 μm² exhibits a maximum responsivity of 10.82 mAW^–1, a high external quantum efficiency of 378.76%, and the lowest noise equivalent power of 5.3 × 10^–13 WHz^–1/2 for 1064 nm light illumination of optical power 16.2 nW in self-bias mode. The proposed pure SnSe-based device exhibits wavelength-dependent polarity switching in self-bias mode for the spectral range UV–NIR, enabling the device to function in bidirectional mode. The polarity flipping response in the photodetector makes it possible to differentiate between different photons, such as ultraviolet/visible and near-infrared. This capability can improve the accuracy and efficiency of environmental monitoring systems, enabling better detection and analysis of various environmental factors, such as light pollution, radiation levels, and atmospheric composition. We elucidated the possible phenomenon underlying polarity flipping through a comprehensive characterization of the material’s structural, optical, and electrical properties. Our findings reveal that the controlled phase during sputter deposition can significantly alter the crystalline structure, resulting in tunable optical properties and enhanced photoresponse across a broad wavelength range. Additionally, the polarity flipping phenomenon enables the photodetector to exhibit unprecedented broadband wavelength selectivity, thus opening avenues for developing advanced optoelectronic devices. This research advances our fundamental understanding of phase-controlled SnSe thin film and paves the way for designing and fabricating highly efficient self-powered photodetectors with tailored spectral response characteristics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CeOx-Mesoporous Silica Nanoparticle Antioxidants to Enhance the Stability of Organic Photovoltaic Devices","authors":"Eul-Yong Shin,&nbsp;Yeongseop Lee,&nbsp;Ho Young Kim,&nbsp;So Hyun Park,&nbsp;Yongseok Jun,&nbsp;Jin Young Kim* and Hae Jung Son*,&nbsp;","doi":"10.1021/acsaelm.4c0086710.1021/acsaelm.4c00867","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00867https://doi.org/10.1021/acsaelm.4c00867","url":null,"abstract":"<p >Mitigating ultraviolet exposure-induced photodegradation remains a critical challenge to the long-term stability of organic photovoltaics (OPVs). Here, we improved the stability of the OPV device by introducing an antioxidant interlayer composed of nanocrystalline ceria supported on mesoporous silica nanoparticles (CeO_<i>x</i>-MSN). The CeO_<i>x</i> nanocrystals within the CeO_<i>x</i>-MSN exhibited a high density of oxygen vacancies and a large ratio of Ce(III) chemical states known to scavenge reactive oxygen species. Optimizing the particle size of the CeO_<i>x</i> nanocrystals further enhanced the ratio of Ce(III) states, enabling superior radical scavenging efficacy in methyl violet degradation tests compared with commercial CeO_<i>x</i> nanostructures. The OPV performance test confirmed that the optimized CeO_<i>x</i>-MSN (CeO_<i>x</i>-MSN_S) can scavenge radicals without a degradation in initial performance under one-sun illumination. More importantly, the photostability test revealed that the OPV device with CeO_<i>x</i>-MSN_S retained 73% of initial performance while the conventional device retained only 54%, corroborating the excellent radical scavenging efficacy of CeO_<i>x</i>-MSN_S.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polymorphic Ferroelectricity in Artificially Stacked MoS2 Interfaces","authors":"Yanggeun Joo, Eunji Hwang, Kenji Watanabe, Takashi Taniguchi, Heejun Yang","doi":"10.1021/acsaelm.4c01249","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01249","url":null,"abstract":"Original ferroelectricity has been observed in van der Waals (vdW) layered materials, where atomic layer lattice sliding can break the lattice inversion symmetry and induce ferroelectricity. While ferroelectricity in conventional bulk ferroelectric materials, driven by atomic (ionic) displacement for electric polarization, is stable at low temperatures, ferroelectricity in vdW materials has exhibited inconsistent temperature dependences, and its various origins reflecting clean vdW interfaces remain to be clarified. In this study, we demonstrate the unique temperature characteristics of polymorphic ferroelectricity in artificially stacked MoS₂ interfaces, probed by transport experiments with edge contacts at various temperatures. In artificially stacked systems with MoS₂ multilayers, two types of interface lattice stacking orders can be formed: rhombohedral (R) and hexagonal (H) stacking orders. In R-stacked MoS₂, ferroelectricity occurs above a critical temperature <i>T</i> = 210 K, and charge trap behaviors are observed below the critical temperature. However, in H-stacked MoS₂, charge trap behaviors dominate the transport above <i>T</i> = 210 K, while ferroelectricity is observed below the critical temperature. The nontrivial temperature dependence of polymorphic ferroelectricity in the R- and H-stacked vdW interfaces can be explained by the distinct roles of thermal energy in the atomic layer lattice sliding and moiré band splitting, paving the way toward advanced applications of polymorphic ferroelectric devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polymorphic Ferroelectricity in Artificially Stacked MoS2 Interfaces","authors":"Yanggeun Joo,&nbsp;Eunji Hwang,&nbsp;Kenji Watanabe,&nbsp;Takashi Taniguchi and Heejun Yang*,&nbsp;","doi":"10.1021/acsaelm.4c0124910.1021/acsaelm.4c01249","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01249https://doi.org/10.1021/acsaelm.4c01249","url":null,"abstract":"<p >Original ferroelectricity has been observed in van der Waals (vdW) layered materials, where atomic layer lattice sliding can break the lattice inversion symmetry and induce ferroelectricity. While ferroelectricity in conventional bulk ferroelectric materials, driven by atomic (ionic) displacement for electric polarization, is stable at low temperatures, ferroelectricity in vdW materials has exhibited inconsistent temperature dependences, and its various origins reflecting clean vdW interfaces remain to be clarified. In this study, we demonstrate the unique temperature characteristics of polymorphic ferroelectricity in artificially stacked MoS₂ interfaces, probed by transport experiments with edge contacts at various temperatures. In artificially stacked systems with MoS₂ multilayers, two types of interface lattice stacking orders can be formed: rhombohedral (R) and hexagonal (H) stacking orders. In R-stacked MoS₂, ferroelectricity occurs above a critical temperature <i>T</i> = 210 K, and charge trap behaviors are observed below the critical temperature. However, in H-stacked MoS₂, charge trap behaviors dominate the transport above <i>T</i> = 210 K, while ferroelectricity is observed below the critical temperature. The nontrivial temperature dependence of polymorphic ferroelectricity in the R- and H-stacked vdW interfaces can be explained by the distinct roles of thermal energy in the atomic layer lattice sliding and moiré band splitting, paving the way toward advanced applications of polymorphic ferroelectric devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}