ACS Applied Electronic Materials最新文献

{"title":"Study on Metal-Oxide Field Effect Transistors of β-Gallium Oxide with AlGaO Spacer Layer Grown on Sapphire for High-Power Device Applications","authors":"Sheng-Ti Chung,&nbsp;Bing-Hang Li,&nbsp;Catherine Langpoklakpam,&nbsp;Chih-Yang Huang,&nbsp;Fu-Gow Tarntair,&nbsp;Wei-Hsiang Chiang,&nbsp;Yi-Kai Hsiao,&nbsp;Hao-Chung Kuo,&nbsp;Dong-Sing Wuu,&nbsp;Ching-Lien Hsiao,&nbsp;Chien-Nan Hsiao and Ray-Hua Horng*,&nbsp;","doi":"10.1021/acsaelm.4c0223010.1021/acsaelm.4c02230","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02230https://doi.org/10.1021/acsaelm.4c02230","url":null,"abstract":"<p >This study utilized metal–organic chemical vapor deposition technology to grow β-Ga₂O₃ epitaxial layers on sapphire substrates and fabricate lateral β-Ga₂O₃ field-effect transistors (FETs). To enhance the performance of these FETs, a β-Ga₂O₃/(Al_0.33Ga_0.67)₂O₃ structure was incorporated. The resulting FETs demonstrated high on-state current (<i>I</i>_on), low on-state resistance (<i>R</i>_on), and a high on–off ratio of drain current, indicating excellent two-dimensional electron gas (2DEG) characteristic offered by β-Ga₂O₃/(Al_0.33Ga_0.67)₂O₃ structure. By optimization of the thickness and doping concentration of β-Ga₂O₃, high-performance 2DEG β-Ga₂O₃ FETs were achieved, which satisfied the stringent requirements for power devices. Notably, the heavily doped β-Ga₂O₃/(Al_0.33Ga_0.67)₂O₃ structure led to a significant improvement in performance, with the saturation current (<i>I</i>_D,sat) increasing from 0.16 to 11.4 mA/mm, a remarkable 6925% increase, and the breakdown voltage rising from 331 to 687 V, an increase of 107.25%. The relative performance of the device with and without AlGaO was also simulated. These enhancements were primarily due to the effective reduction of leakage current density and 2DEG formation by the β-Ga₂O₃/(Al_0.33Ga_0.67)₂O₃ layer, which was grown by the importance of precise growth parameters and structural design in advancing the performance of β-Ga₂O₃ FETs, making them highly promising for high-power applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2767–2775 2767–2775"},"PeriodicalIF":4.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02230","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial Welding of Sulfur-Containing CNTs for an Elastic and Conductive Hydrogel with High-Accuracy Motion Sensing and Electrophysiology Acquisition","authors":"Jiaxin Dai,&nbsp;Dayong Ren*,&nbsp;Shaoning Zhang,&nbsp;Yangxiao Liu,&nbsp;Yongchen Xiao,&nbsp;Zuocheng Wang,&nbsp;Baofeng Wang* and Fuqiang Huang*,&nbsp;","doi":"10.1021/acsaelm.5c0036810.1021/acsaelm.5c00368","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00368https://doi.org/10.1021/acsaelm.5c00368","url":null,"abstract":"<p >Elastic hydrogels with conductive nanofillers are promising candidates for acquiring multifunctional biological signals when adhered to human skin. However, conductive hydrogels are frequently ruptured due to their weak mechanical characteristics, especially withstanding plaguily stretching. Herein, we present a highly elastic, low-hysteresis, conductive poly(acrylic acid)/polyacrylamide (PAA/PAM) hydrogel with sulfur-containing carbon nanotubes with abundant graphene nanoflaps (S-CNTs). Sulfur atoms in situ form covalent bonding with PAM polymer chains, while graphene nanoflaps established a mechanical interlocking interface, which strongly improved the mechanical robustness of the hydrogel network with conductive nanofillers. As a result, the S-CNTs/PAA/PAM hydrogel exhibits comprehensive mechanical properties with a superior stretchability of &gt;1200%, lower hysteresis (7.4%), and excellent mechanical durability (&gt;600 cycles). Therefore, the S-CNTs/PAA/PAM hydrogel was utilized as an epidermal electrode for dynamically monitoring human daily motions and electrophysiological signals. We believe that this work paves the way for the potential application of flexible/wearable electrodes and maybe even integrating both into the same device for human health detection in the future bioelectronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3125–3134 3125–3134"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transforming Boron Monoxide Monolayer with Light Metal Atoms: Stability and Electronic Properties","authors":"Maryam Sotudeh,&nbsp;Zahra Rastipour,&nbsp;Fazel Shojaei*,&nbsp;Afshan Mohajeri* and Hong Seok Kang,&nbsp;","doi":"10.1021/acsaelm.4c0204510.1021/acsaelm.4c02045","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02045https://doi.org/10.1021/acsaelm.4c02045","url":null,"abstract":"<p >Using density functional theory (DFT) calculations, we investigated the incorporation of light metal atoms (Li, Na, Be, and Mg) into the pores of a boron monoxide monolayer (p-BO ML), a recently identified member of the small-pore two-dimensional materials family. Our findings revealed that all metal-incorporated BO MLs (BO-M MLs) exhibited excellent dynamical, mechanical, and thermal stabilities. We also assessed their chemical stabilities in the presence of typical atmospheric gases, demonstrating good chemical stability for the BO-Li, BO-Na, and BO-Mg MLs. The electronic structures of BO-M MLs differed significantly from that of the p-BO ML, which has an indirect wide band gap of 3.78 eV. Specifically, BO-Li and BO-Be MLs were nonmagnetic semiconductors with narrow band gaps of 0.44 and 0.19 eV, respectively, while BO-Mg ML was a magnetic semiconductor with a band gap of 0.25 eV. In contrast, BO-Na ML exhibited metallic behavior. Detailed analysis showed that the observed variations in the electronic structures of BO-M MLs, compared to the p-BO ML, arose from a combination of charge transfer from the metal atoms to the BO skeleton and lattice distortion (expansion or shrinkage). The significant changes in the electronic structure of the p-BO ML upon metal incorporation also led to the modulation of its charge carrier mobilities. For instance, while p-BO ML exhibited a high hole mobility of 4522 cm² V^–¹ s^–¹, the presence of Mg atoms suppressed this hole mobility while significantly enhancing the electron mobility to 5753 cm² V^–¹ s^–¹. Furthermore, metal incorporation altered the negative curvature energy of the p-BO ML, a rare property with potential implications for mechanical metamaterials and catalysis. These insights provided a deeper understanding of the interplay between metal atoms and BO monolayers, paving the way for future research and technological advancements.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2696–2708 2696–2708"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Zero-Powered InHfO/GaN Photodetectors for Ultraviolet Image Sensing Systems","authors":"Bojia Chen,&nbsp;Jiyuan Zhu,&nbsp;Shice Wei,&nbsp;Yu Zhang,&nbsp;Xuefeng Wu*,&nbsp;David Wei Zhang,&nbsp;Qing-Qing Sun,&nbsp;Li Ji* and Shen Hu*,&nbsp;","doi":"10.1021/acsaelm.4c0227910.1021/acsaelm.4c02279","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02279https://doi.org/10.1021/acsaelm.4c02279","url":null,"abstract":"<p >The advancement of photodetector technology, particularly in enhancing response speed and photosensitivity, is crucial for the development of high-density optical arrays and image sensing systems. Wide-bandgap indium oxide with high electron mobility is ideal for fabricating ultraviolet photodetectors capable of high-speed response. Nonetheless, photodetectors based on single indium oxide semiconductors exhibit a large dark current and high energy consumption, which hinders their practical application in photodetection. In this research, we fabricated an indium–hafnium oxide/gallium nitride (IHO/GaN) ultraviolet photodetector via atomic layer deposition. This method not only reduces the photodetector’s response time but also allows it to realize optoelectronic conversion without external power. Simultaneously, the optimized photodetector exhibits remarkable performance metrics under 280 nm ultraviolet illumination, including a responsivity of 375 mA/W, a detectivity of 4.4 × 10¹² Jones, a photo-dark current ratio of 3.3 × 10⁵ %, and a rise/fall time of 42/66 ms. The exceptional performance is credited to the swift separation of photogenerated electron–hole pairs, facilitated by the substantial built-in electric field present in the depletion region at the p–n junction interface. Additionally, arrayed IHO/GaN photodetectors demonstrate potential to apply in image recognition systems, providing an effective strategy for constructing high-performance zero-powered ultraviolet detectors for optical imaging.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2793–2802 2793–2802"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multidimensional Light Perception through Time-Dependent Plasticity of an Optoelectronic Synapse","authors":"Yuge Wang,&nbsp;Hui Yang* and Xi Chen*,&nbsp;","doi":"10.1021/acsaelm.5c0009010.1021/acsaelm.5c00090","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00090https://doi.org/10.1021/acsaelm.5c00090","url":null,"abstract":"<p >Light signals encode multidimensional parameters, such as wavelength, power density, and pulse duration, making visual perception critically important. The development of multidimensional light perception has proven to be a computational challenge. Conventional artificial visual systems consisting of optoelectronic sensors and von Neumann architecture suffer from separating sensors and memory units. Artificial optoelectronic synapses implementing optical memory have recently enabled neuromorphic computing for optical parameter classification. However, the classification of multiple light parameters on a synapse has not been achieved. Developing a synapse with adjustable photocurrent responses under multidimensional optical parameters and a neuromorphic computing paradigm suitable for the classification is crucial. Here, MoS₂/SnO₂ quantum dots optoelectronic synapses are demonstrated, in which the heterojunction between MoS₂ and SnO₂ achieves a pronounced optical memory effect. The time-dependent plasticity of the photocurrent responses is exhibited under wavelengths, power densities, and durations of light stimulation. The responses successfully emulate essential synaptic behaviors, including paired-pulse facilitation, short-term memory, long-term memory, and learning experience. Next, a recurrent neural network committed to processing the time-dependent responses is used to classify wavelengths, power densities, and durations of optical inputs. This realizes an accuracy of 100% under 1-parameter 3-class classification, 94% under 2-parameter 9-class classification and 96% under 3-parameter 8-class classification. Moreover, this work demonstrates effective feature recognition and extraction of a bicolor image, showcasing the advantage of multidimensional light perception for precise color-coded pattern extraction and advancing applications in multimodal image analysis. These findings highlight promising prospects in satisfying stringent performance requirements on artificial visual systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2910–2918 2910–2918"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Extremely Low Electrical Contact Resistance at the Interface of Carbon-Fiber-Based Gas Diffusion Layer and Anatase TiO2 Thin Films","authors":"Tomohito Sudare*,&nbsp;Han Xu,&nbsp;Ryo Nakayama*,&nbsp;Reiichi Ueda,&nbsp;Rento Naito,&nbsp;Ryota Shimizu,&nbsp;Yumie Miura,&nbsp;Kentaro Kaneko,&nbsp;Naoomi Yamada and Taro Hitosugi*,&nbsp;","doi":"10.1021/acsaelm.4c0223610.1021/acsaelm.4c02236","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02236https://doi.org/10.1021/acsaelm.4c02236","url":null,"abstract":"<p >With the rapid development of polymer electrolyte membrane fuel cells (PEMFC), there is a growing need to reduce the contact resistance between a gas diffusion layer (GDL) and stainless-steel separators within stacked cells. However, stainless-steel separators coated with metal oxides or nitrides exhibit a high contact resistance exceeding 10 mΩ cm², whereas gold-coated stainless steel exhibits 1–5 mΩ cm². Therefore, the development of alternative coating materials is critical. Here, we demonstrate that the contact resistance is reduced by an order of magnitude to 1.4 mΩ cm² using anatase Nb-doped TiO₂ for the coating of separators. First, we fabricate electrically conductive TiO₂ with a resistivity of 6.2 × 10^–3 Ω cm on glass substrates using mist chemical vapor deposition. Next, we minimized the contact resistance using Bayesian optimization and robots. Bayesian optimization helps find optimal conditions, and automated experiments with robots help to prepare and evaluate more samples. The contact resistance is the lowest value reported for metal oxides and nitrides and is comparable to that of gold. Furthermore, the coated anatase Nb-doped TiO₂ exhibits high corrosion resistance under acidic conditions. These results highlight anatase Nb-doped TiO₂ as a promising coating material for high-power-density PEMFC separators.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2785–2792 2785–2792"},"PeriodicalIF":4.3,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Mechanical Bending on the Photoconducting and Luminescent Properties of Epitaxial ZnO Films","authors":"Martin Rodrigo Tolosa,&nbsp;Manuel Villafuerte,&nbsp;Horacio Brizuela,&nbsp;Jorge Mario Ferreyra and German Bridoux*,&nbsp;","doi":"10.1021/acsaelm.5c0010010.1021/acsaelm.5c00100","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00100https://doi.org/10.1021/acsaelm.5c00100","url":null,"abstract":"<p >A study of the influence of mechanical bending on the electrical resistance, photoconductivity (PC), and photoluminescence (PL) of epitaxial ZnO films is presented. We have found a systematic decrease in the electrical resistance and of the energy gap extracted from the photoconductivity and photoluminescence spectra as the bending of the film is increased. From the photoconductivity spectra, it is also possible to extract the electric field present on the film, obtaining a systematic increase of this field as the bending of the film is increased in accordance with an increment of the induced polarization due to this applied flexion. This result suggests that the observed reduction in the effective energy gap can be due to the Franz–Keldysh effect.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2660–2664 2660–2664"},"PeriodicalIF":4.3,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Glancing Angle Deposition-Induced Asymmetric Growth and Magnetic Anisotropy in Co2FeAl/C60 Thin Films","authors":"Sonia Kaushik,&nbsp;Rakhul Raj,&nbsp;Manisha Priyadarsini,&nbsp;Pooja Gupta,&nbsp;Gouranga Manna,&nbsp;Varimalla Raghavendra Reddy and Dileep Kumar*,&nbsp;","doi":"10.1021/acsaelm.5c0017910.1021/acsaelm.5c00179","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00179https://doi.org/10.1021/acsaelm.5c00179","url":null,"abstract":"<p >Owing to rapid interest in the magnetic properties of metal–organic bilayers for use in organic spintronics, a series of Heusler alloy Co₂FeAl (CFA) films were grown using glancing angle deposition (GLAD) on organic layers (fullerene-C₆₀) to investigate the evolution of magnetism and its correlation with morphological development at the interfaces with different thicknesses of CFA films. The magneto-optic Kerr effect, grazing incidence small-angle X-ray scattering (GISAXS), and X-ray diffraction (XRD) techniques are employed for the magnetic, morphological, and structural characterizations. The amorphous growth of CFA is validated through XRD measurements, while GISAXS uncovers the asymmetric morphology arising due to the columnar growth of CFA. Hysteresis loop measurement at low temperatures suggests the superparamagnetic behavior of CFA at low thickness due to the formation of small CFA clusters inside the C₆₀ layer. At higher film thickness, the formation of a diffused CFA layer prevailed over the magnetization reversal by the coherent rotation of the magnetic moments. In the top CFA layer, magnetization reversal mechanism is facilitated by the combined effect of domain wall nucleation and coherent rotation of moments. Compared to the literature, where the oblique angle deposited magnetic films on inorganic materials exhibit magnetic anisotropy and coercivity variation in the film plane as per the standard Stoner–Wohlfarth model, the observed anomaly in the magnetic anisotropy and angular-dependent coercivity variation in the present case are attributed to the coupling between the magnetization reversal mechanism in the bulk and the diffused CFA layer. Thus, a deep insight into the magnetic anisotropy and its tunability in the glancing angle deposited films is essential to achieve the desired functionality of diffusion-controlled organic spin valve structures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3000–3009 3000–3009"},"PeriodicalIF":4.3,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Straightforward Synthesis of Borophene Nanolayers for Enhanced NO2 Detection in Humid Environments","authors":"Juan Casanova-Chafer*,&nbsp; and ,&nbsp;Carla Bittencourt,&nbsp;","doi":"10.1021/acsaelm.4c0200310.1021/acsaelm.4c02003","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02003https://doi.org/10.1021/acsaelm.4c02003","url":null,"abstract":"<p >This study investigates the synthesis and gas sensing performance of borophene nanolayers produced through the sonochemical exfoliation method. The advantages of this method, including cost-effectiveness, simplicity and potential for scalability, make it a viable option for practical applications. High-resolution transmission electron microscopy (HRTEM) confirmed the successful exfoliation of boron into nanosheets with an average diameter of approximately 100 nm. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses revealed the β-rhombohedral crystal structure. Additionally, the existence of carbon and oxygen on the surface has been determined and investigated. At room temperature, the borophene nanolayers showed exceptional gas sensing capabilities for detecting nitrogen dioxide (NO₂), especially in a humid environment. The sensitivity was significantly increased by about 50% when water molecules were present. These borophene nanolayers demonstrated unprecedented sensing performance for NO₂, with detection (LOD) and quantification (LOQ) limits of 23 and 76 ppb, respectively.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2305–2312 2305–2312"},"PeriodicalIF":4.3,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth Characteristics and Electronic Properties of Epitaxial NdNiO3 Thin Films by Atomic Layer Deposition","authors":"Linn Rykkje*,&nbsp;Ola Nilsen and Henrik Hovde Sønsteby,&nbsp;","doi":"10.1021/acsaelm.4c0230610.1021/acsaelm.4c02306","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02306https://doi.org/10.1021/acsaelm.4c02306","url":null,"abstract":"<p >The transition to next-generation electronics is inevitable and will require innovative architectures and materials functionalities. The multifunctional and often strongly coupled behaviors of transition metal oxides can offer alternative pathways to more energy-efficient devices, such as transistors. Here, we study thin films of NdNiO₃ for its potential as a transistor channel switching material owing to the metal–insulator transition it exhibits at ∼200 K in bulk. The thin films exhibit high structural integrity and relevant functional properties when deposited by atomic layer deposition (ALD) under industrial processing conditions, thus providing a viable pathway for device integration. By varying the ratio of binary oxide subcycles, we can precisely obtain the stoichiometric NdNiO₃ composition for which the thin films become epitaxial as deposited at 225 °C on SrTiO₃(001). Prior to annealing, the specific resistivities at room temperature show a dependence on the out-of-plane lattice parameter, <i>c</i>, with a nonlinear increase from 10^–4 to 10^–1 Ωcm as <i>c</i> increases. After annealing at 650 °C in air, both the out-of-plane lattice parameters and resistivities converge toward a narrow range (<i>c</i> = 3.789–3.794 Å and 10^–4 Ωcm, respectively). X-ray diffraction and reciprocal space mapping reveal that annealing also has the effect of increasing the strain in the thin films; however, they remain partially relaxed from the substrate. A metal–insulator transition takes place at 140 K under cooling and 175 K upon heating back to room temperature.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2466–2475 2466–2475"},"PeriodicalIF":4.3,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02306","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}