ACS Applied Electronic Materials最新文献

{"title":"Endogenous Overdrive Stabilization in Monolithic One-Transistor-One-Electrolyte-Gated Transistor Devices for Mitigating Nonlinear Synaptic Updates","authors":"Shaoming Fu,&nbsp;Zhijie Lin,&nbsp;Shan Hu,&nbsp;Sixin Chen,&nbsp;Jiahui Lin,&nbsp;Peicheng Jiao,&nbsp;Yanghui Liu,&nbsp;Chuan Liu,&nbsp;Xiaoci Liang","doi":"10.1021/acsaelm.6c01515","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01515","url":null,"abstract":"<p>Solid-state electrolyte-gated transistors (EGTs) enable synaptic state updates for neuromorphic computing. When integrated with a driving transistor, the effective programming voltage is expected, under an idealized low-impedance model, to decrease as the conductance of EGT increases, leading to nonlinear synaptic update. Here, we show that this assumption does not hold in a CMOS-compatible 1T1E architecture that monolithically integrates a silicon NMOS with a LiPON-based EGT. In situ measurements reveal the opposite trend, where the effective programming voltage increases during pulsed operation. This behavior arises from electrolyte-dominated impedance evolution, which drives voltage redistribution and compensates the evolving electrochemical barrier. This endogenous stabilization of the electrochemical overdrive mitigates nonlinear synaptic update, enabling improved linearity and stable multilevel conductance modulation. These results indicate a regime-dependent framework in which programming dynamics are governed by impedance hierarchy rather than fixed biasing conditions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8157–8166"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Versatile Approach to Measuring Complex GHz Permittivity of Substrate Supported Polymer Films","authors":"Fahima Ouchen,&nbsp;Stefan B. Nikodemski,&nbsp;Emily Heckman,&nbsp;Mohammad I. Vakil,&nbsp;Jarrett H. Vella","doi":"10.1021/acsaelm.6c01375","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01375","url":null,"abstract":"<p>Polymers have long been used as substrates and dielectric coatings for radiofrequency (RF) applications across a broad range of frequencies. No longer limited to polyolefins and other insulating backbone structures, a wide variety of conjugated, doped, and open-shell polymers and small molecules have been developed with tantalizing electrical properties waiting to be leveraged for low cost, size, weight, and power applications at GHz frequencies. A few isolated examples, such as polymer antennas, have been described, but the larger field of active, organic RF materials has been hindered by a lack of a simple, universally applicable measurement techniques. Values important to RF design, such as conductivity and mobility, are easily measured, but other critical measurements such as complex permittivity prevent rational design and modeling of active RF components made from organic conductors. Existing techniques measure bulk sample coupons inserted into waveguides or at low (kHz-MHz) frequencies, but a broadly applicable GHz solution has remained elusive. We present a broadband method for extracting the complex permittivity of polymeric films at GHz frequencies, employing the X-band (8–12 GHz) as a convenient frequency range. The material under test is deposited at the physical end of a coplanar waveguide where the radiating end effects are measured and analyzed. The complex permittivity is extracted from S11 measurements of the open-end coplanar waveguide by applying a combination of modified Nicolson-Ross-Weir algorithms and a multilayer conformal mapping method using specially derived theoretical relationships. Using this technique, the X-band permittivity of a representative polymer, SU-8, was obtained with &gt;95% agreement to published literature values. The approach is suitable for any solution-processed organic material (polymers, macromolecules, small molecules) and provides a versatile, simple route to broadband RF characterization, key to unlocking the technological potential of these materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7993–8001"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Topology‑Programmed Silver Nanowire Electrodes via Direct Ink Writing for Stretchable Electronics","authors":"Yifan Zhao,&nbsp;Youyou Liu,&nbsp;Meiqi Chen,&nbsp;Lekun Liu,&nbsp;Xin Yang,&nbsp;Liancong Yue,&nbsp;Min Gong,&nbsp;Dongrui Wang","doi":"10.1021/acsaelm.6c01026","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01026","url":null,"abstract":"<p>Topology engineering is an effective strategy for improving the electromechanical stability of printed stretchable electrodes. Here, we report a direct ink writing approach to fabricate silver nanowire (AgNW) electrodes with various topological patterns on polyurethane substrates. Aqueous AgNW inks are formulated using sodium alginate (SA) as a rheology modifier and Triton X-100 as a wetting agent, enabling smooth printing through a 50 μm nozzle. A CaCl₂/ethanol spray post‑treatment effectively reduces line resistance by improving AgNW junctions via capillary‑driven cold welding and forming a Ca²⁺‑crosslinked SA network, while also enhancing adhesion stability (only ∼15% resistance increase after 200 tape‑peeling cycles). Among the evaluated patterns, the Peano topology exhibits the lowest stretch sensitivity (<em>S</em> = 5.6), outperforming arc and spiderweb patterns. Within Peano variants, the half‑and‑half layout demonstrates the best directional consistency under orthogonal stretching, with similar and relatively low <em>S</em> values along both <em>x</em> and <em>y</em> directions, although a larger resistance change is observed at 45° stretching. This work provides a rational basis for designing topology‑patterned stretchable electrodes with balanced multidirectional performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7771–7779"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Powered Cu2ZnSnS4/CuI Type-I Heterojunction for Flexible and Broadband Photodetection Applications","authors":"Abhishek Pratap Singh,&nbsp;Shital Jyotsna Sahoo,&nbsp;Sushmee Badhulika","doi":"10.1021/acsaelm.6c01175","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01175","url":null,"abstract":"<p>Self-powered devices that do not demand an external source of energy are becoming ever more attractive alternatives. The principle of such devices relies on the use of natural electric fields, which are highly effective in carrier separation. Flexible photodetectors are used in wearable electronics in which flexibility is of utmost importance. For this purpose, our research focuses on a paper-based Copper Zinc Tin Sulfide/Copper (I) Iodide type-I heterostructure photodetector prepared by using the successive ionic layer adsorption and reaction technique. The surface nanostructures of the photodetector are confirmed by SEM images, whereas the crystal structures of the material contain two phases, which are confirmed by XRD analysis. Moreover, optical absorption spectroscopy covers a wide range of wavelengths, showing bandgap energies of 3.55 eV for CuI and 1.12 eV for Cu₂ZnSnS₄ (CZTS). The detector has risen and falls in the range of 2.78–5.47 s at zero bias (0 V), with a maximum responsivity of 8.79 mA/W (1 mV) and a maximum specific detectivity of 1.08 × 10⁸ Jones across the entire broadband spectrum. This detector is considered an efficient and sustainable technology due to its self-powering functionality, its flexibility, its fabrication at ambient temperatures, and its unique ability to detect across the entire spectrum. Furthermore, it is reliable due to its consistency in performance after 3000 bending cycles. The CZTS/CuI detector has an optimal blend of properties suitable for wearable and energy-efficient optoelectronics through its effective integration of autonomous functionality, wide spectral detection, and mechanical flexibility.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7829–7841"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrasensitive and Robust Flexible Sensors Based on Bacterial Cellulose/ZnO Nanorods for Next-Generation Electronic Skin and Human–Machine Interaction","authors":"Yueru Zhang,&nbsp;Yang Liu,&nbsp;Lan Zhou,&nbsp;Shuaiqi Fang,&nbsp;Min Zhu,&nbsp;Baoxiu Wang,&nbsp;Zhenlin Jiang","doi":"10.1021/acsaelm.6c01144","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01144","url":null,"abstract":"<p>The rapid development of wearable electronics has driven extensive interest in flexible pressure sensors for applications such as human-machine interaction, electronic skin, and health monitoring. Nevertheless, the attainment of elevated sensitivity, minimal detection limits, and expeditious responses continues to represent a formidable challenge. In this study, we present a piezoresistive pressure sensor that exhibits flexibility, based on bacterial cellulose (BC) nanofibers that have been modified with zinc oxide (ZnO) nanorods. The optimized BC/ZnO-0.3 sensor exhibits a high sensitivity of 23.14 kPa^–1 in the low-pressure region, a wide sensing range (0–2.5 kPa), fast response/recovery (74/109 ms), no lag during pressure relief, and excellent durability over 2500 cycles. This is due to the synergistic coupling between the elastic BC scaffold and the conductive pathways formed by ZnO nanorods. In comparison with previously reported BC-based sensors, the present BC/ZnO film demonstrates significantly enhanced sensitivity and faster response, owing to the optimized conductive percolation network. The sensor facilitates the real-time detection of various human joint movements, in addition to subtle biomechanical signals. It demonstrates efficacy in speech signal monitoring and handwriting trajectory identification. Of particular significance is the integration of the sensor onto a robotic finger, which has been demonstrated to successfully detect pressure magnitude during grasping operations. This represents a significant step towards the realization of human-machine interaction. The BC/ZnO film sensor demonstrates high sensitivity, rapid response, and robust cyclability, suggesting significant potential for applications in human behaviors monitoring and electronic skin.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7815–7828"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metastable Fingerprint States in a Frustrated Cholesteric Liquid Crystal","authors":"Timothy Ogolla,&nbsp;Xiang-Dong Mi,&nbsp;Mingqian He,&nbsp;Liang-Chy Chien","doi":"10.1021/acsaelm.6c00920","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00920","url":null,"abstract":"<p>We demonstrate a metastable fingerprint (mFP) state in a homeotropically aligned cholesteric liquid crystal (CLC) with negative dielectric anisotropy. The mFP forms upon gradual removal of a high-voltage, low-frequency electric field and persists for several hours at zero field. Factors influencing the stability of this state include the confinement ratio—the ratio of the cell thickness to the cholesteric pitch, ρ = <em>d</em>/<em>p</em>—the alignment layer rubbing strength, and material composition. Electro-optical characterization of the dichroic dye-doped CLC in a single-layer cell reveals four distinct optical states: a clear state, two tinted states, and a hazy state. Furthermore, CTAB-doping enables controlled erasure of the mFP and access to bubble domains, a distinct, weakly scattering, tinted state. In the optimized configuration (ρ ≈ 1, five-times rubbed alignment layer), driving at 80 mV s^–1, the induced mFP persists for 400–500 min when the voltage is removed. These findings establish mFP textures as a promising route for developing bistable cholesteric optical devices such as liquid crystal windows.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7732–7745"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shear-Induced Deformation of Multiscale Conductive Networks in Acetylene Black Slurries Studied by Rheo-Impedance Spectroscopy","authors":"Yoshiyuki Komoda,&nbsp;Kentaro Yoshida,&nbsp;Naoto Ohmura","doi":"10.1021/acsaelm.6c00769","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00769","url":null,"abstract":"<p>Understanding the structural evolution of conductive additive networks under shear is essential for improving the manufacturing processes of lithium-ion battery (LiB) electrodes. In this study, we investigate the hierarchical conductive organization of acetylene black (AB) slurries under steady shear flow using rheo-impedance measurements. Viscosity measurements show that the AB network is progressively broken down under shear regardless of AB content, whereas the viscoelastic properties confirm that a fully developed particle network emerges only above approximately 2 wt%. Impedance spectroscopy resolved two dominant relaxation modes of different characteristic scales, which can be represented phenomenologically using an equivalent circuit model incorporating constant phase elements. The conductance and capacitance associated with the higher-frequency mode increase proportionally with AB loading, reflecting the growth of local conductive pathways. In contrast, the low-frequency capacitive response remained nearly constant, originating from the interfacial polarization at the electrode surface. Under steady shear flow, the low-frequency conductivity decreases markedly at low AB concentrations (∼1 wt%) due to disruption of long-range connectivity, while the high-frequency response diminished simultaneously, indicating loss of electrical connectivity between fragmented domains. At higher AB concentrations (∼4 wt%), both rheological and electrical properties remained robust against shear, demonstrating the presence of a dense and rapidly recovering network. Comparison of viscosity and conductivity reveals that apparent mechanical breakdown does not necessarily correspond to loss of electrical pathways. These findings provide new insight into the shear-resolved relaxation behavior in conductive networks and offer guidance for optimizing slurry formulation and processing conditions in LiB electrode manufacturing.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7711–7723"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Dimensionless Model for Predicting the Output Performance of Rotary Triboelectric Nanogenerators","authors":"Hailong Chen,&nbsp;Yifan Wu,&nbsp;Chongfei Sun,&nbsp;Chunhui Yang,&nbsp;Yongtao Li,&nbsp;Weihao Zhao,&nbsp;Qidong Shi","doi":"10.1021/acsaelm.6c01155","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01155","url":null,"abstract":"<p>Triboelectric nanogenerators (TENGs) represent a revolutionary technology. As a crucial branch, rotary TENGs (R-TENGs) exhibit promising prospects in rotational energy harvesting owing to structural advantages. However, traditional 3D finite element method (FEM) simulations severe element deformation and time-consuming moving mesh issues, creating a bottleneck for rapid structural optimization. To address this, we propose a dimensionless solution method tailored for R-TENGs. By building upon the physical model of sliding-mode TENGs and integrating the inherent periodic dynamic characteristics of R-TENGs, an efficient dimensionless solution framework is successfully constructed and systematically validated against FEM simulations. The results demonstrate that the proposed method possesses excellent predictive capabilities for both transient responses and steady-state baseline shifts. Implemented via an in-house solver and validated against 3D FEM simulations, the framework achieves a steady-state coefficient of determination (<em>R</em>²) exceeding 0.98 and a normalized root mean square error (NRMSE) below 10%. Crucially, computational time is compressed by nearly three orders of magnitude, reducing simulation duration from over 5000 s in FEM to under 6 s. Although the continuous operational peak accuracy remains above 85% due to 3D fringing and charge leakage, the model maintains a total transferred charge deviation below 8% while accurately tracking dynamic trends. Compared to traditional finite element simulations, this dimensionless approach significantly simplifies numerical computation and enhances efficiency, providing a highly reliable and effective theoretical tool for the practical performance evaluation and structural optimization of rotary TENG systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7842–7852"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suppressing Noise and Leakage Current in PbS Quantum-Dot Short-Wave Infrared Photodiodes via a PM6 Conjugated Polymer Interlayer","authors":"Jiufeng Wu,&nbsp;Fan Fang,&nbsp;Haodong Tang,&nbsp;Youming Chen,&nbsp;Changji Zheng,&nbsp;Peizhao Liu,&nbsp;Jiaji Cheng,&nbsp;Shuang Xiao,&nbsp;Ruikun Pan,&nbsp;Wei Chen","doi":"10.1021/acsaelm.6c01644","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01644","url":null,"abstract":"<p>Defect-mediated leakage at charge-selective contacts fundamentally limits the performance of colloidal quantum dot (QD) short-wave infrared (SWIR) photodiodes. Here, we address this challenge by inserting a thin conjugated polymer (PM6) interlayer between the PbS-EDT hole transport layer and the MoO_x electrode. This interlayer suppresses interfacial trap-assisted transport, reduces leakage pathways, and stabilizes charge dynamics, thereby achieving a more regulated interfacial transport regime. Consequently, the PM6-modified devices exhibit a markedly reduced dark current density of 70.1 nA/cm² at −0.5 V, a high external quantum efficiency of 82.56% (zero bias) at 1300 nm, and a significantly suppressed noise spectral density, leading to an enhanced specific detectivity of 2.62 × 10¹¹ Jones. Our findings establish polymer interlayer engineering as a simple and scalable approach to realize low-noise, high-stability SWIR photodetectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8167–8174"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduction Scheme of the GaN Interface State on a Metal–Oxide Semiconductor Device by Superacid","authors":"Yuta Furusawa,&nbsp;Xigen Li,&nbsp;Heajeong Cheong,&nbsp;Yoshio Honda,&nbsp;Hiroshi Amano","doi":"10.1021/acsaelm.6c00686","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00686","url":null,"abstract":"<p>The performance and reliability of gallium nitride (GaN) metal–oxide semiconductor high-electron-mobility transistors (MOS-HEMTs) are critically limited by high interface state densities (<em>D</em>_it) originating from unstable native oxides and surface reoxidation during conventional subtractive cleaning processes. In this study, we propose an interface engineering scheme using perfluorobutanesulfonic acid (PFBS), a superacid, as a short-chain self-assembled monolayer (SAM) prior to the atomic layer deposition (ALD) of Al₂O₃. X-ray photoelectron spectroscopy (XPS) and electrical characterizations reveal that PFBS effectively suppresses Ga–O bond formation. We investigate how the bulky perfluoroalkyl chains provide a steric “umbrella effect,” effectively shielding the underlying Ga surface atoms from atmospheric oxygen and moisture, despite steric hindrance preventing a one-to-one bonding ratio. Furthermore, unlike conventional long-chain SAMs, the short-chain nature and high vapor pressure of PFBS enable clean thermal desorption without carbon contamination during the 350 °C ALD vacuum heating process. This allows for an unhindered, high-quality initial reaction with trimethylaluminum. Consequently, the <em>D</em>_it evaluated by the conductance method was significantly reduced to the lower 10¹¹ eV⁻¹ cm^–2 range, representing a 50% reduction compared to conventionally treated samples. This functional surface modification, combining robust <em>ex situ</em> protection with clean <em>in situ</em> desorption, provides a key technology not only for enhancing the performance of MOS-HEMTs but also for the practical realization of GaN MOSFETs, which have yet to be commercialized.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7705–7710"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}