ACS Applied Electronic Materials最新文献_第9页

Nest-Like Carbon Nanotube Network Derived from Fly Ash Cenosphere with Enhanced Microwave Absorption Performance

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-21 DOI: 10.1021/acsaelm.5c0037010.1021/acsaelm.5c00370

Hongjie Gao, Xiaomin Zhang*, Jinbin Ren, Zhixin Cai, Wei Zheng, Wenjie Qiu, Wenjing Zhao, Tiantian Feng, Jing Cao and Ruisen Lv,

{"title":"Nest-Like Carbon Nanotube Network Derived from Fly Ash Cenosphere with Enhanced Microwave Absorption Performance","authors":"Hongjie Gao, Xiaomin Zhang*, Jinbin Ren, Zhixin Cai, Wei Zheng, Wenjie Qiu, Wenjing Zhao, Tiantian Feng, Jing Cao and Ruisen Lv, ","doi":"10.1021/acsaelm.5c0037010.1021/acsaelm.5c00370","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00370https://doi.org/10.1021/acsaelm.5c00370","url":null,"abstract":"Carbon nanotubes (CNTs) are widely utilized as microwave absorption (MA) materials due to their low density and high loss capacity. However, the poor impedance match and single mechanism of CNTs limit the further development of CNT-based high-performance MA materials. Herein, inspired by the bird nest frame structure, we designed a nest-like CNT network derived from fly ash cenospheres. The fly ash cenosphere@CNTs depict good MA performances with an effective absorption band of 6.96 GHz and corresponding minimum reflection loss of −61.16 dB. The excellent MA properties may be attributed to the conduction loss, polarization loss, and magnetic loss resulting from the synergistic effect of their hollow heterogeneous, nest-like network structure, and magnetism/electricity components. The simulation of the far-field radar cross section further verifies the reliability of the fly ash cenosphere@CNTs in actual microwave environments. In this work, an approach is proposed to improve the MA properties of carbon-based materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3143–3152 3143–3152"},"PeriodicalIF":4.3,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Real-Time Nanoparticle Dispersion Monitoring via CuO Nanowire Photodetectors: An Effective Approach for In Situ Nanomaterial Synthesis Control

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.5c0016310.1021/acsaelm.5c00163

Dong Hwan Kim, Dong Hwa Kwak, Seokyoung Ahn and Jong Soo Ko*,

{"title":"Real-Time Nanoparticle Dispersion Monitoring via CuO Nanowire Photodetectors: An Effective Approach for In Situ Nanomaterial Synthesis Control","authors":"Dong Hwan Kim, Dong Hwa Kwak, Seokyoung Ahn and Jong Soo Ko*, ","doi":"10.1021/acsaelm.5c0016310.1021/acsaelm.5c00163","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00163https://doi.org/10.1021/acsaelm.5c00163","url":null,"abstract":"We herein demonstrate a high-performance photodetector based on copper oxide (CuO) nanowires fabricated via alkaline wet oxidation. The device exhibits notable optoelectronic properties, including a consistent photocurrent response over a range of light intensities, high responsivity (up to 23.69 A/W at 0.08 mW/cm2) and detectivity (up to 9.95 × 1011 Jones at 0.08 mW/cm2) at low light intensities, and fast response times of approximately 17 ms. Our results reveal that this CuO nanowire photodetector can effectively monitor the dispersion state of multiwalled carbon nanotubes (MWCNTs) in real-time by measuring changes in photocurrent. The photodetector response correlated well with conventional UV–Vis spectroscopy measurements, confirming its capability to detect subtle changes in the MWCNT dispersion. This approach provides immediate feedback during the dispersion process, allowing for dynamic optimization of the nanomaterial synthesis. Our findings demonstrate the potential of CuO nanowire photodetectors for effective in situ quality control in nanomaterial production and open promising avenues for real-time monitoring in various fields, including environmental sensing and biomedical diagnostics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2971–2980 2971–2980"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Texture-Engineered High-Tc KNbO3–NaNbO3 Piezoceramics with Enhanced d33/d33* and Energy-Harvesting Applicability by BaTiO3 Chemical Modification: An Optimization Approach

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.4c0193810.1021/acsaelm.4c01938

Tejas K. Jadhav, Nikita J. Kapadi and Rahul C. Kambale*,

{"title":"Texture-Engineered High-Tc KNbO3–NaNbO3 Piezoceramics with Enhanced d33/d33* and Energy-Harvesting Applicability by BaTiO3 Chemical Modification: An Optimization Approach","authors":"Tejas K. Jadhav, Nikita J. Kapadi and Rahul C. Kambale*, ","doi":"10.1021/acsaelm.4c0193810.1021/acsaelm.4c01938","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01938https://doi.org/10.1021/acsaelm.4c01938","url":null,"abstract":"This study demonstrates significantly enhanced the piezoelectric properties of lead-free (K0.49Na0.49Ba0.02)(Nb0.98Ti0.02)O3 (KB1) ceramics through a combination of chemical modification and texture engineering. A significant breakthrough was achieved with the textured KB1 ceramic using 9 wt % NaNbO3 template (KB1–9%NNT) particles. This ceramic demonstrated an enhanced piezoelectric charge constant (d33) of 210 pC/N, which is 1.64 times greater than that of nontextured KB1 ceramics. The planar electromechanical coupling coefficient (kp) of KB1–9%NNT was also significantly improved, reaching 33.11, which is 2.28 times higher than that of nontextured KB1. Furthermore, it exhibited a high piezoelectric strain coefficient (d33*) of 330.23 pm/V and a large piezoelectric voltage coefficient (g33) of 101.76 × 10–3 V m/N. These enhanced piezoelectric properties translated into a substantial figure of merit (d33 × g33 = 23.37 × 10–12 m2/N), signifying excellent energy-harvesting capabilities. Under a load resistance of 300 kΩ, it generated an impressive 20.60 V with a current of 68.68 μA, resulting in a power output of 1.41 mW and a power density of 36.09 μW/mm3. This generated power was sufficient to illuminate an NT3314 panel, consisting of 62 red light-emitting diodes (LEDs). These findings highlight the significant potential of the KB1–9%NNT ceramic for high-performance piezoelectric devices and energy-harvesting applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2675–2688 2675–2688"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sequential Growth of Organic Semiconductor-Based Heterojunction Bilayers for Ambipolar Transistors and Inverters

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.5c0017810.1021/acsaelm.5c00178

Min Gyeong Kang, Yooseong Ahn and Hoichang Yang*,

{"title":"Sequential Growth of Organic Semiconductor-Based Heterojunction Bilayers for Ambipolar Transistors and Inverters","authors":"Min Gyeong Kang, Yooseong Ahn and Hoichang Yang*, ","doi":"10.1021/acsaelm.5c0017810.1021/acsaelm.5c00178","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00178https://doi.org/10.1021/acsaelm.5c00178","url":null,"abstract":"This study evaluated ambipolar organic thin-film transistors (OTFTs) and complementary-like inverters using N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene bilayers deposited sequentially on a polymer-grafted SiO2 dielectric. As the underlying layers in semiconductor heterojunction bilayers (HJBs), PTCDI-C13 crystallites with a nominal thickness of 1–4 monolayers (ML) were deposited and reorganized thermally. Finally, the crystal growth of pentacene was intermediated on the PTCDI-C13 crystallites. Semiconductor HJBs with 40 nm thick pentacene crystallites clearly exhibited ambipolar charge-carrier transport, even when 1 ML-thick PTCDI-C13 crystallites were placed beneath pentacene. The ambipolar OTFTs exhibited various hole (μh) and electron (μe) mobilities of 0.10–0.75 and 0.013–0.55 cm2 V–1 s–1, respectively, depending on the π-conjugated structures of the semiconductors. The terrace-like crystal growth of pentacene could be intermediated on the smooth-layered crystallites of PTCDI-C13. An optimized OTFT could produce balanced μh and μe values as high as 0.60 and 0.55 cm2 V–1 s–1, respectively. In addition, complementary-like inverters using two ambipolar OTFTs yielded a high voltage gain of up to 80.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3010–3018 3010–3018"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient Fabrication of Highly Elastic, Self-Adhesive MXene-Doped Lignin-Based Conductive Hydrogels for Flexible Strain Sensing Applications

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.5c0003610.1021/acsaelm.5c00036

Tianqi Du, Xing Su, Yuan Zhu, Gege Zhao, Miao Zhang, Chengcheng Li, Zaisheng Cai and Yaping Zhao*,

{"title":"Efficient Fabrication of Highly Elastic, Self-Adhesive MXene-Doped Lignin-Based Conductive Hydrogels for Flexible Strain Sensing Applications","authors":"Tianqi Du, Xing Su, Yuan Zhu, Gege Zhao, Miao Zhang, Chengcheng Li, Zaisheng Cai and Yaping Zhao*, ","doi":"10.1021/acsaelm.5c0003610.1021/acsaelm.5c00036","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00036https://doi.org/10.1021/acsaelm.5c00036","url":null,"abstract":"Conductive hydrogels are used in a wide variety of applications, including human motion detection, conversion, and storage of energy and self-powered wearable devices. However, their poor mechanical properties or poor adhesion to various materials has seriously hindered their prospects in the direction of flexible wearable electronic devices. Herein, alkali lignin was sulfonated to disperse silica nanoparticles (LSNs) as a mechanical reinforcing agent. Subsequently, the sulfonated lignin can form a self-catalytic system (LSNs–Fe3+) with iron ions to efficiently prepare conductive hydrogels at room temperature. This preparation strategy of “one-stone-two-birds” endows the hydrogel with excellent high elasticity and self-adhesiveness. In addition, the doping of MXene endows the hydrogel with a superior conductivity. Specifically, the prepared hydrogels containing 1.5 wt % LSNs have excellent tensile properties (∼700% elongation and ∼76.0 kPa tensile strength) and nice adhesion properties (∼19.9 kPa self-adhesion). In addition, the assembled hydrogel sensor has a high sensitivity and cyclic stability and can monitor human movement in real time. In conclusion, the conductive hydrogel designed in this study was expected to be an excellent candidate for flexible, wearable electronics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2862–2872 2862–2872"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution of Defect States within the Band Gap of Indium–Tin–Zinc Oxide Thin Film Transistors Using the Quantitative Defect Analysis Method

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.5c0011110.1021/acsaelm.5c00111

Dong Yeob Shin, Min Jung Kim, Jinyoung Go, Hyunmin Hong, Sunwoo Lee, Younggil Park, Teklebrahan Gebrekrstos Weldemhret*, Kwangsik Jeong* and Kwun-Bum Chung*,

{"title":"Evolution of Defect States within the Band Gap of Indium–Tin–Zinc Oxide Thin Film Transistors Using the Quantitative Defect Analysis Method","authors":"Dong Yeob Shin, Min Jung Kim, Jinyoung Go, Hyunmin Hong, Sunwoo Lee, Younggil Park, Teklebrahan Gebrekrstos Weldemhret*, Kwangsik Jeong* and Kwun-Bum Chung*, ","doi":"10.1021/acsaelm.5c0011110.1021/acsaelm.5c00111","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00111https://doi.org/10.1021/acsaelm.5c00111","url":null,"abstract":"To develop electronic devices and improve their performance, it is crucial to understand the causes of bias instability in thin film transistors (TFTs). Here, we examine the origin of the bias stability of Indium–Tin-Zinc Oxide (a-ITZO) TFTs after annealing in various atmospheres. The annealing process was performed in N2 (N2–ITZO), air (Air-ITZO), and O2 (O2–ITZO) after the a-ITZO was deposited by magnetron sputtering. Air-ITZO has superior bias stability under positive bias stress (PBS) despite its high defect oxygen vacancies. On the other hand, N2–ITZO and O2–ITZO both showed worse PBS stability despite having low oxygen vacancies and defect densities. The results of a qualitative defect investigation using X-ray photoelectron spectroscopy and spectroscopic ellipsometry failed to explain the primary cause of these phenomena. In contrast, a quantitative examination of oxygen-related defect states using photo-induced current transient spectroscopy revealed that the excellent PBS stability of Air-ITZO was mostly attributable to the low density of defect states above the Fermi level. Moreover, the negative bias stress (NBS) stability of the devices exhibits the trend of O2–ITZO > N2–ITZO > Air-ITZO, which is consistent with the trend found for deep-level defect densities. These results indicate that quantitative defect state analysis is key to understanding the mechanism of device performance and stress bias stability in metal oxide TFTs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2928–2938 2928–2938"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Termination-Dependent Resistive Switching in SrTiO3 Valence Change Memory Cells

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.4c0235010.1021/acsaelm.4c02350

Marko Mladenović*, Manasa Kaniselvan, Christoph Weilenmann, Alexandros Emboras and Mathieu Luisier,

{"title":"Termination-Dependent Resistive Switching in SrTiO3 Valence Change Memory Cells","authors":"Marko Mladenović*, Manasa Kaniselvan, Christoph Weilenmann, Alexandros Emboras and Mathieu Luisier, ","doi":"10.1021/acsaelm.4c0235010.1021/acsaelm.4c02350","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02350https://doi.org/10.1021/acsaelm.4c02350","url":null,"abstract":"Valence change memory (VCM) cells based on SrTiO3 (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple conductive filaments, those based on STO are known to exhibit a distinctive “interface-type” switching, which is associated with the modulation of the Schottky barrier at their active electrode. Still, a detailed picture of the processes that lead to interface-type switching is not available. In this work, we use a fully atomistic ab initio model to study the resistive switching of a Pt-STO-Ti stack. We identify that the termination of the crystalline STO plays a decisive role in the switching mechanism, depending on the relative band alignment between the material and the Pt electrode. In particular, we show that the accumulation of oxygen vacancies at the Pt side can be the origin of resistive switching in TiO2-terminated devices by lowering the conduction band minimum of the STO layer, thus facilitating transmission through the Schottky barrier. Moreover, we investigated the possibility of filamentary switching in STO and revealed that it is most likely to occur at the Pt electrode of the SrO-terminated cells.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2839–2847 2839–2847"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transparent Flexible Candlelight OLED

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.4c0195910.1021/acsaelm.4c01959

Tun-Hao Chen, Xian-Qing Huang, Sushanta Lenka, Dipanshu Sharma, Hsuan-Min Wang, Ping-Hsien Wu, Sun-Zen Chen, Ying-Hao Chu* and Jwo-Huei Jou*,

{"title":"Transparent Flexible Candlelight OLED","authors":"Tun-Hao Chen, Xian-Qing Huang, Sushanta Lenka, Dipanshu Sharma, Hsuan-Min Wang, Ping-Hsien Wu, Sun-Zen Chen, Ying-Hao Chu* and Jwo-Huei Jou*, ","doi":"10.1021/acsaelm.4c0195910.1021/acsaelm.4c01959","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01959https://doi.org/10.1021/acsaelm.4c01959","url":null,"abstract":"Excessive exposure to intense blue light could harm retina and disrupt melatonin secretion at night. To solve, a blue light-less candlelight organic light-emitting diode (OLED) was invented in 2012, a festive replacement of hydrocarbon-burning candles. Incorporating further flexibility and transparency could create design freedom and expand its applicability. We demonstrate herein a successful fabrication of a transparent candlelight OLED on a flexible mica. When unpowered, this device exhibits 40% transmittance. Upon applying voltage, both the top and bottom emissions of the device exhibit blue-hazard-free candlelight with a color temperature of 1800 K, which remain unaffected by bending. From retinal protection perspective, the resulting 1800 K color temperature permits, at 100 l×, an exposure limit of 54,900 s, while 404 s for a 4000 K yellow-white counterpart. Upon exposure at night for 1.5 h, it would only suppress 2% melatonin, in contrast of 13% by the yellow-white light. We anticipate this research to open a path for fabricating OLEDs which are transparent, flexible, and omni-friendly.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2720–2730 2720–2730"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01959","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Facile Manufacturing of Ultralight TPU/PDA/CNT Nanofibers with Advanced Electromagnetic Wave Absorption

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-20 DOI: 10.1021/acsaelm.4c0232710.1021/acsaelm.4c02327

Lanlan Wu, Wei Wang, Zikang Han, Yuling Peng, Qiang Feng, Jie Zhang, Jiang Li* and Shaoyun Guo,

{"title":"Facile Manufacturing of Ultralight TPU/PDA/CNT Nanofibers with Advanced Electromagnetic Wave Absorption","authors":"Lanlan Wu, Wei Wang, Zikang Han, Yuling Peng, Qiang Feng, Jie Zhang, Jiang Li* and Shaoyun Guo, ","doi":"10.1021/acsaelm.4c0232710.1021/acsaelm.4c02327","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02327https://doi.org/10.1021/acsaelm.4c02327","url":null,"abstract":"With the rapid development of communication technology and precision electronic equipment, the development of lightweight, high-performance absorbers is increasingly urgent. Herein, an ultralight porous TPU nanofiber was prepared by electrostatic spinning, and then, the TPU surface was modified by PDA to optimize the combining ability between TPU and CNTs, which led the CNTs to enter and attach inside the network under ultrasonication. Specifically, the synthesized hierarchical TPU/PDA/CNTs network exhibits an excellent microwave absorption performance of −63.5 dB and an optimal effective absorption bandwidth (EAB) of 8.6 GHz. The hole-rich network structure not only reduces the material mass but also introduces air to optimize the impedance properties. Heteroatoms and functional groups in PDA and TPU components can act as polarization centers, leading to significant polarization loss. Relevant electromagnetic simulations also demonstrate the absorption potential of the nanofiber. This design concept provides inspiration for the development of ultralight materials and optimization of the impedance property for polymer-based absorbers.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2829–2838 2829–2838"},"PeriodicalIF":4.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Role of Invisible Oxygen in the Trilayer Laminates of Ultrathin a-IGZO/SiOx/a-IGZO Films

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-03-19 DOI: 10.1021/acsaelm.5c0043310.1021/acsaelm.5c00433

Aitkazy Kaisha*, Olzat Toktarbaiuly, Ardak Ainabayev, Tolagay Duisebayev, Hongqiang Wang, Nurxat Nuraje and Igor V. Shvets,

{"title":"Role of Invisible Oxygen in the Trilayer Laminates of Ultrathin a-IGZO/SiOx/a-IGZO Films","authors":"Aitkazy Kaisha*, Olzat Toktarbaiuly, Ardak Ainabayev, Tolagay Duisebayev, Hongqiang Wang, Nurxat Nuraje and Igor V. Shvets, ","doi":"10.1021/acsaelm.5c0043310.1021/acsaelm.5c00433","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00433https://doi.org/10.1021/acsaelm.5c00433","url":null,"abstract":"In this study, ultrathin multilayered films of IGZO/SiOx/a-IGZO were fabricated via radio frequency (RF) magnetron cosputtering, with the SiOx layer thickness systematically varied between 1 and 7 nm while maintaining a constant a-IGZO layer thickness. The effect of the SiOx thickness on the electrical properties of the films was thoroughly investigated. A significant deterioration in electrical performance was observed for SiOx layers up to 3 nm; however, an improvement was noted as the SiOx thickness increased to 7 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the oxygen structure and chemical composition within the multilayers remained unchanged. However, it confirmed that the ultrathin 2 nm thick SiOx (x ∼ 1.5) layer exhibited nonstoichiometric configurations. The contribution of Fowler–Nordheim (FN) tunneling was observed in multilayer films with varying thicknesses of SiOx. The presence of oxygen was found to play a critical role in modulating electron trap states within the SiOx layer, thereby mitigating the reduction in the charge carrier concentration in the films. By optimizing oxygen flow during deposition, we successfully eliminated the charge carrier drop in a-IGZO20 nm/SiOx(2 nm)/a-IGZO10 nm and a-IGZO20 nm/SiOx(3 nm)/a-IGZO10 nm films. Notably, the ultrathin SiOx layers in the a-IGZO/SiOx/a-IGZO films functioned as highly effective carrier suppressor layers, presenting a promising alternative to conventional doping approaches for controlling electrical performance.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3153–3163 3153–3163"},"PeriodicalIF":4.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00433","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143790395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0