ACS Applied Electronic Materials最新文献

{"title":"Investigating Reverse Low-Bias Conduction Mechanisms in Ga2O3 Schottky Barrier Diodes Using Pulsed Current Methods","authors":"Thanh Huong Vo,&nbsp;Sunjae Kim,&nbsp;Hyeong-Yun Kim,&nbsp;Ji-Hyeon Park,&nbsp;Jinyoung Hwang,&nbsp;Dae-Woo Jeon* and Wan Sik Hwang*,&nbsp;","doi":"10.1021/acsaelm.5c0013410.1021/acsaelm.5c00134","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00134https://doi.org/10.1021/acsaelm.5c00134","url":null,"abstract":"<p >This study presents a comparative analysis of direct current (DC) and pulsed current (PC) measurement methods applied to Ga₂O₃ Schottky barrier diodes (SBDs), particularly under reverse bias conditions. Significant discrepancies between the two methods are observed for Ga₂O₃ SBDs, while commercial Si SBDs show no noticeable differences under comparable conditions. The discrepancies are attributed to the wide bandgap characteristics of Ga₂O₃, which result in deeper trap levels and more pronounced charge trapping and detrapping behavior compared to Si. PC measurements of Ga₂O₃ SBDs reveal two distinct conduction regions: Schottky emission dominates at low reverse bias, while Fowler–Nordheim (FN) tunneling becomes the primary conduction mechanism at higher reverse bias. Time-dependent trapping effects are further investigated by varying the pulse width time (<i>T</i>_w). The results show that as <i>T</i>_w increases, the reverse current decreases and eventually saturates. This behavior highlights the influence of trapped charges, which impede the flow of subsequent electrons and reduce the overall current density. The effective Schottky barrier height determined by the Schottky emission is found to be highly sensitive to the trapped charges, while the barrier height obtained by FN tunneling remains largely unaffected. This work highlights the importance of utilizing dynamic measurement techniques, including PC, to accurately characterize the intrinsic properties of wide-band gap semiconductors like Ga₂O₃. In addition, the insights gained into the interplay between the Schottky emission and FN tunneling provide valuable guidance for optimizing the performance and reliability of Ga₂O₃-based devices in high-power and high-frequency applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3870–3876 3870–3876"},"PeriodicalIF":4.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Situ Observation of Ion Migration in a Ferroelectric Ionic Conductor Rb-KTP during Thermal Annealing","authors":"Cherrie S. J. Lee*,&nbsp;Laura Barrett,&nbsp;Rama Vasudevan,&nbsp;Anton Ievlev and Carlota Canalias,&nbsp;","doi":"10.1021/acsaelm.4c0226410.1021/acsaelm.4c02264","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02264https://doi.org/10.1021/acsaelm.4c02264","url":null,"abstract":"<p >Ion exchange in Rb-doped KTiOPO₄ has facilitated significant advancements in ferroelectric domain engineering, yet understanding the underlying mechanisms remains in its infancy. We perform time-of-flight secondary ion mass spectrometry analysis on multiple periodically ion-exchanged and periodically poled Rb-doped KTiOPO₄ samples under different temperatures and annealing durations. The results are compared between annealing in air, which involved ex situ annealing before periodic poling, and vacuum annealing conducted in situ after periodic poling. The Rb⁺ diffusion profile after periodic ion exchange forms a tooth-shaped pattern. We show that in situ annealing causes a surface pinning effect on the nonpolar face, limiting Rb⁺ migration along the polar axis at the surface. Once the pinned layer is removed through milling, the underlying Rb⁺ diffusion is distinctively different from the surface. Additionally, the rate of Rb⁺ diffusion during in situ annealing is linear, while the periodic domain structures remain stable after annealing. These results contribute to understanding the ionic diffusion process in a ferroelectric ionic conductor and using ion exchange to tailor the linear and nonlinear properties of KTiOPO₄.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3679–3685 3679–3685"},"PeriodicalIF":4.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02264","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal–Organic Framework-Templated Growth of Cation-Substituted Metal Oxide Shell MO (M = Co, Ni, and Zn) on a CuO Core: An In-Depth Understanding of Methane Gas-Sensing Performance","authors":"Shital J. Sahoo,&nbsp;Banalata Maji,&nbsp;Adyasha Das,&nbsp;Rajendra K. Sharma and Priyabrat Dash*,&nbsp;","doi":"10.1021/acsaelm.5c0017410.1021/acsaelm.5c00174","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00174https://doi.org/10.1021/acsaelm.5c00174","url":null,"abstract":"<p >Significant demand for advanced sensing materials has been emerging that enable the sensitive, real-time, and continuous detection of gas molecules in gas sensors, which have increasingly proven to be effective tools for environmental monitoring. In this context, metal–organic framework (MOF)-derived metal oxide semiconductors have garnered attention as highly attractive materials for gas-sensing applications due to their high specific surface area, distinctive morphology formed by modulation of functional linkers, and plentiful metal sites. Here, three distinct types of porous hierarchical core–shell heterostructure metal oxides have been designed by shelling with a Co-based zeolitic imidazolate framework (ZIF)-67 MOF, Ni-MOF, and zinc-based ZIF-8 MOF on a core octahedron Cu-MOF followed by calcining at a very slow ramp rate. The structural advantages of core–shell CuO@Co₃O₄ having high porosity and chemisorbed oxygen result in superior sensing performance for methane gas compared to porous CuO@ZnO and CuO@NiO core–shell structures with little rigid morphology and lower defective oxygen percentage. The higher active CuO@Co₃O₄ core–shell structure has achieved room temperature methane gas sensing with quick response and recovery time (<i>T</i>_res = 16 s, <i>T</i>_rec = 11 s) by decorating on nitrogen-doped three-dimensional reduced graphene oxide (N-3DrGO) sheets (<i>S</i> % = 6.54 for 100 ppm). The presence of a higher number of oxygen defects supported by X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) spectra is the main reason behind the high gas-sensing performance of the nanocomposite at room temperature.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3922–3939 3922–3939"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hole-Selective Contact Optimization for Silicon Heterojunction Solar Cells: The Role of Doping and Thickness of a Boron-Doped a-Si:H Layer","authors":"Shrestha Bhattacharya,&nbsp;Ashutosh Pandey,&nbsp;Shahnawaz Alam,&nbsp;Silajit Manna,&nbsp;Sourav Sadhukhan,&nbsp;Son Pal Singh and Vamsi Krishna Komarala*,&nbsp;","doi":"10.1021/acsaelm.5c0025710.1021/acsaelm.5c00257","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00257https://doi.org/10.1021/acsaelm.5c00257","url":null,"abstract":"<p >In silicon heterojunction (SHJ) solar cell fabrication, the hole-selective layer is crucial in minimizing the contact resistivity (ρ_c) along with charge carrier recombination. This study shows the effect of varying the diborane doping and thickness of p-a-Si:H in reducing the series resistance (<i>R</i>_s) and enhancing the fill factor (FF) of SHJ cells. Experimental results indicate the criticality of an optimal diborane doping of ∼3%, supported by a dark conductivity of ∼2 × 10^–5 S/cm. A lower hole-selective (i-a-Si:H/p-a-Si:H/ITO) ρ_c of ∼432 mΩ·cm² was observed after p-a-Si:H layer optimization due to proper c-Si band bending, facilitating an effective carrier transport. Furthermore, a comprehensive analysis of <i>R</i>_s components identifies the hole-selective contact as the primary contributor, responsible for ∼49% of the device’s total <i>R</i>_s of ∼860 mΩ·cm². The carrier transport was quantified by evaluating the light <i>R</i>_s with the dark <i>R</i>_s correction at different p-layer thicknesses. This has led to a front emitter SHJ cell’s open-circuit voltage (<i>V</i>_oc) of ∼725 mV, an FF of ∼79.20%, and a power conversion efficiency of ∼22.16%. Simulations using TCAD explained the effects of p-layer doping (work function) and thickness on carrier screening length, energy band bending at the device interfaces, and <i>V</i>_oc and efficiency of the SHJ cell, providing a theoretical basis for experimental observations.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4065–4074 4065–4074"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of 4f-Orbitals on the Magnetodielectric Properties and Spin-Phonon Coupling in Orthorhombic Sm0.50M0.50MnO3 (M = Ho and Eu)","authors":"Mohit Chandra,&nbsp;Satish Yadav,&nbsp;Vaidehi Deshmukh,&nbsp;Rajeev Rawat,&nbsp;V. G. Sathe,&nbsp;R. J. Choudhary and Kiran Singh*,&nbsp;","doi":"10.1021/acsaelm.5c0039710.1021/acsaelm.5c00397","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00397https://doi.org/10.1021/acsaelm.5c00397","url":null,"abstract":"<p >The polycrystalline samples of SmMnO₃ (SMO), Sm_0.50Ho_0.50MnO₃ (SHMO), and Sm_0.50Eu_0.50MnO₃ (SEMO) have been synthesized to understand the effect of Ho and Eu substitution on the structural and physical properties. Detailed crystal structure, magnetic, dielectric, magnetodielectric (MD), and Raman spectroscopy measurements have been performed to investigate the role of 4f-orbital on the magnetic, MD, and spin-phonon coupling in these materials. The pristine SMO exhibits an antiferromagnetic (AFM) transition around 58 K due to the canted A-type AFM ordering of Mn³⁺ moments. The Mn–O–Mn bond angle, unit cell volume, and the AFM transition temperature decrease with the partial substitution of Ho and Eu. All the studied samples exhibit anomalies in the dielectric measurement corresponding to the magnetic ordering. The temperature-dependent dielectric results of SHMO illustrate a sharp peak at 22 K, which shifted toward the lower temperature side with increasing magnetic field. These results are similar to orthorhombic RMnO₃. The temperature-dependent Raman measurements of all the studied samples reveal an anomaly at the magnetic ordering temperature, which suggests the spin-phonon coupling. The sign of MD is different for SEMO and SHMO samples. Our results demonstrated the enhancement of the MD value in SHMO and SEMO as compared to SMO. The SHMO exhibits both positive and negative MD in the magnetically ordered state. These findings highlight the strong magnetoelectric coupling in SHMO and SEMO as compared to pristine SMO.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4231–4241 4231–4241"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From Donor–Donor Exciplex-Forming Interfaces to Detection of an Explosive Compound with Phenylethenyl Derivatives Redefining OLED Efficiency and Extremely High Sensitivity to Picric Acid","authors":"Ehsan Ullah Rashid,&nbsp;Monika Cekaviciute,&nbsp;Jurate Simokaitiene,&nbsp;Melika Ghasemi,&nbsp;Dmytro Volyniuk,&nbsp;Khrystyna Ivaniuk,&nbsp;Pavlo Stakhira and Juozas Vidas Grazulevicius*,&nbsp;","doi":"10.1021/acsaelm.5c0012310.1021/acsaelm.5c00123","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00123https://doi.org/10.1021/acsaelm.5c00123","url":null,"abstract":"<p >In this study, three derivatives of phenylethenyl-substituted phenoxazine and phenothiazine are synthesized via Buchwald-Hartwig cross-coupling, targeting multifunctionality as exciplex-forming materials and efficient cyan emitters for organic light-emitting diodes (OLEDs) and sensitive dectectors of picric acid. Advanced density functional theory (DFT) calculations at the mPW1PW91/6–31G(d,p) level unveil the intricate electronic architectures of these compounds, emphasizing their spatial molecular orbitals and the charge-transfer dynamics governing excited-state properties. Reorganization energy calculations indicate superior hole mobility, particularly for derivatives with tetraphenylethenyl groups. Photophysical investigations reveal aggregation-induced emission enhancement (AIEE) in water-THF mixtures, with cyan fluorescence intensifying at high water fractions (<i>f</i>_w% = 99) due to the formation of emissive aggregates. Photoluminescence quantum yields (PLQYs) are significantly higher of solid films (13.5–53%) compared to those of dilute toluene solutions (3–26%). This observation is attributed to enhanced intermolecular interactions and aggregate formation. The emissive aggregates of the compounds exhibit extremely high sensitivity to electron-deficient picric acid via noncovalent interactions with Stern–Volmer constants up to 2.96 × 10⁴ M^–1. This is attributed to their strong donor–acceptor charge-transfer mechanisms. OLEDs employing these materials as emitters display bluish-cyan electroluminescence (λ_max≈500 nm), with brightness surpassing 1000 cd/m² and external quantum efficiencies (EQEs) ranging from 2.5 to 6%. The relatively high EQEs are explained by triplet harvesting from interface donor–donor exciplexes.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3877–3891 3877–3891"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00123","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strongly Localized Excitons for Efficient Micro-Light-Emitting-Diodes under Low Injection Levels","authors":"Chuhan Deng,&nbsp;Zhizhong Chen*,&nbsp;Boyan Dong,&nbsp;Zuojian Pan,&nbsp;Haodong Zhang,&nbsp;Yuchen Li,&nbsp;Daqi Wang,&nbsp;Fei Huang,&nbsp;Ling Hu,&nbsp;Weihua Chen,&nbsp;Fei Jiao,&nbsp;Xiangning Kang,&nbsp;Qi Wang,&nbsp;Guoyi Zhang,&nbsp;Bo Shen,&nbsp;Lin Yuan,&nbsp;Jianfeng Zhu and Chenhui Xia,&nbsp;","doi":"10.1021/acsaelm.5c0039610.1021/acsaelm.5c00396","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00396https://doi.org/10.1021/acsaelm.5c00396","url":null,"abstract":"<p >Recovery and isolation of damages on the sidewall are two main routes to improve the external quantum efficiency (EQE) of micro light-emitting-diodes (μLEDs) under low injection levels. In this work, strongly localized excitons in μLEDs were found to play a role in carrier isolation from damages. An efficient 5 μm-diameter InGaN blue μLED array with a high EQE of 11.77% at 0.2 A/cm² was fabricated. The longitudinal optical-phonon sidebands (LO-PSBs) were observed near the zero-phonon line (ZPL) in electroluminescence (EL) and confocal photoluminescence (PL) spectra at different temperatures and excitation densities. The LO-PSBs originated from the coupling of the strongly localized excitons to the LO-phonons. According to the Huang–Rhys factor, about 55% of the total injected carriers became strongly localized excitons. Compared to the reference μLEDs, a higher fraction of strongly localized excitons corresponded to more suppression of nonradiative recombination in the sidewall region. By confocal PL and Raman mappings, the distribution of the strongly localized excitons was visible on the mesa. The exciton fraction was calculated using the Saha equation. The binding energy of the excitons in the efficient μLEDs at a current density of 0.05 A/cm² was estimated to be above 35 meV. This work proposed a way to eliminate the edge effects of μLEDs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4220–4230 4220–4230"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Layer MoS2-Based Atomristor’s Resistive Switching Model for SET Sweep with Density Functional Theory Simulations","authors":"Aykut Turfanda*,&nbsp; and ,&nbsp;Alessio Gagliardi*,&nbsp;","doi":"10.1021/acsaelm.5c0006110.1021/acsaelm.5c00061","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00061https://doi.org/10.1021/acsaelm.5c00061","url":null,"abstract":"<p >We study the atomistic origins of resistive switching in atomristors through a single-layer MoS₂ and the Au(111) surface’s slab model. We aim to understand the main working mechanism and the physical phenomena governing these atomically thin resistive switching devices. For this, we use analytical models together with density functional theory simulations in a symbiotic relationship to explain the SET process and hysteresis. We found that our calculations with neutral and charged S-vacancy and with neutral and charged Au dopants may reveal the complex interface dynamics of atomristors. We conclude that a reversible breakdown mechanism occurs for SET, which is preceded by the degradation of single-layer MoS₂ during synthesis. Understanding the mechanism will allow us to fine-tune this low-energy consumption atomically thin resistive switching device to fulfill the necessities of neuromorphic computing better.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3795–3809 3795–3809"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00061","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Perovskite Solar Cells: From Fabrication to Failure","authors":"Renita M. D’Souza,&nbsp; and ,&nbsp;Timothy L. Kelly*,&nbsp;","doi":"10.1021/acsaelm.4c0229710.1021/acsaelm.4c02297","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02297https://doi.org/10.1021/acsaelm.4c02297","url":null,"abstract":"<p >Over the past decade, there have been tremendous advances in the design and fabrication of perovskite solar cells (PSCs). The unique optoelectronic properties of lead halide perovskites have resulted in solution-processed solar cells with excellent efficiencies, and significant advances have now been made in both lab-scale and large-area devices. As the technology moves toward commercialization, it is increasingly important to understand the stability of the devices under operationally relevant conditions. What is the projected lifetime of a perovskite-based module? Which environmental factors (e.g., humidity, heat, light) are most pernicious? What is the precise mechanism of device failure? To this end, both <i>in situ</i> and <i>operando</i> characterization techniques have proven to be useful methods and have provided important information about perovskite crystallization, degradation, and transformation processes. This spotlight article discusses recent advances in PSCs from both a device fabrication and device failure perspective, highlighting our research group’s contributions along the way.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3621–3631 3621–3631"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of T-ZnO Process for Gas and UV Sensors","authors":"Sindu Shree,&nbsp;Vasile Postica,&nbsp;Lennart Voß,&nbsp;Cristian Lupan,&nbsp;Yogendra Kumar Mishra,&nbsp;Lorenz Kienle,&nbsp;Rainer Adelung* and Oleg Lupan*,&nbsp;","doi":"10.1021/acsaelm.5c0009710.1021/acsaelm.5c00097","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00097https://doi.org/10.1021/acsaelm.5c00097","url":null,"abstract":"<p >In this study, a rapid and scalable technological approach was developed to grow various types of tetrapodal ZnO (T-ZnO) based on a modified flame transport synthesis. The morphological, compositional, structural, and sensing properties of the T-ZnO particles were investigated in detail using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), which allowed observation of the influence of the arm morphology of T-ZnO microparticles on their physical and sensing properties to UV light and volatile organic compounds (VOCs). With increasing synthesis temperature from 920 to 1000 °C, a considerable decrease in tetrapod arm diameter (from 2–8 μm to 50–150 nm) toward a higher aspect ratio was observed. Further, structural analysis revealed monocrystalline <i>c</i>-axis-oriented growth of the tetrapod arms regardless of temperature. However, at higher temperatures of 990 and 1000 °C, a 10–15 nm thin amorphous layer of SiO_<i>x</i> was evidenced by energy-dispersive X-ray spectroscopy (EDS), covering the T-ZnO particles. Both the change in aspect ratio and the formation of the amorphous SiO_<i>x</i> layer affect the sensing properties, e.g., leading to an increased response to UV light. Further design optimizations are critical in order to obtain high-performance UV and volatile organic compound (VOC) sensor structures that work efficiently even at room temperature. The influence of the applied bias voltage and the relative humidity on the performance of the UV photodetectors was examined in detail. Gas sensing measurements demonstrated the possibility of detecting low concentrations of VOC vapors with a detection limit of ∼0.5 ppm at 20 °C. The UV and gas detection mechanisms correlated to the morphology of the samples are tentatively reported. The presented study is of high importance in understanding the role of morphology and aspect ratio of ZnO’s tetrapodal structures and surface modifications on its sensing performance for industrial and biomedical applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3848–3863 3848–3863"},"PeriodicalIF":4.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00097","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}