ACS Applied Electronic Materials最新文献_第9页

The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions 外延 SrTiO3/GaAs 异质结中界面带排列的作用

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-16 DOI: 10.1021/acsaelm.4c01150

Shaked Caspi, Maria Baskin, Sergey Shay Shusterman, Di Zhang, Aiping Chen, Doron Cohen-Elias, Noam Sicron, Moti Katz, Eilam Yalon, Nini Pryds, Lior Kornblum

{"title":"The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions","authors":"Shaked Caspi, Maria Baskin, Sergey Shay Shusterman, Di Zhang, Aiping Chen, Doron Cohen-Elias, Noam Sicron, Moti Katz, Eilam Yalon, Nini Pryds, Lior Kornblum","doi":"10.1021/acsaelm.4c01150","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01150","url":null,"abstract":"Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide–semiconductor interfaces and intimate knowledge of their potential landscape and charge transport. In this study, we investigated the electrical properties of epitaxial SrTiO3/GaAs heterostructures by examining the band alignment and transport behavior at the interface. We employ X-ray photoelectron spectroscopy (XPS) to measure the barriers for electrons and holes across the interface and, through them, explain the transport behavior for junctions with n- and p-type GaAs. We further show qualitative evidence of the strong photoresponse of these structures, illustrating the potential of these structures in optoelectronic devices. These results establish the fundamental groundwork for utilizing these interfaces toward new devices and define their design space.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gradient Corrosion-Resistant Copper Using Molecular Decomposable Ink from Recycling 利用回收的分子可分解油墨实现梯度耐蚀铜

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-16 DOI: 10.1021/acsaelm.4c0125910.1021/acsaelm.4c01259

Saurabh Khuje, Abdullah Islam, Long Zhu, Jun Zhang, Zhongxuan Wang, Thomas Parker, Jian Yu* and Shenqiang Ren*,

{"title":"Gradient Corrosion-Resistant Copper Using Molecular Decomposable Ink from Recycling","authors":"Saurabh Khuje, Abdullah Islam, Long Zhu, Jun Zhang, Zhongxuan Wang, Thomas Parker, Jian Yu* and Shenqiang Ren*, ","doi":"10.1021/acsaelm.4c0125910.1021/acsaelm.4c01259","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01259https://doi.org/10.1021/acsaelm.4c01259","url":null,"abstract":"Oxidation and corrosion present significant challenges for copper in critical applications such as electronics. Graphene-like carbon materials hold promise for preventing oxidation and corrosion, but their application to metallic surfaces is hindered by a complex immobilization process. Herein, we describe copper-based molecular decomposable inks derived from recycling which enable in situ conversion to form a copper─graphitic carbon hierarchical structure. This structure withstands severe corrosive and oxidative environments and maintains stable performance across a wide temperature range, from cryogenic (−193 °C) to high temperature (500 °C) conditions. The graphitic carbon shell acts as an effective barrier, preventing oxidation and corrosion by creating lengthy diffusion routes within the hierarchical copper matrix. This enables the reliable operation of a printed antenna under a corrosive environment in a reliable fashion. The results show that the copper with a graphitic carbon shell has excellent oxidation and corrosion resistance capabilities, and the findings can be expanded to establish printed molecular decomposable materials as a platform for rapid prototyping of anticorrosion and antioxidation electronics suitable for different environmental conditions.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions 外延 SrTiO3/GaAs 异质结中界面带排列的作用

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-16 DOI: 10.1021/acsaelm.4c0115010.1021/acsaelm.4c01150

Shaked Caspi*, Maria Baskin, Sergey Shay Shusterman, Di Zhang, Aiping Chen, Doron Cohen-Elias, Noam Sicron, Moti Katz, Eilam Yalon, Nini Pryds and Lior Kornblum*,

{"title":"The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions","authors":"Shaked Caspi*, Maria Baskin, Sergey Shay Shusterman, Di Zhang, Aiping Chen, Doron Cohen-Elias, Noam Sicron, Moti Katz, Eilam Yalon, Nini Pryds and Lior Kornblum*, ","doi":"10.1021/acsaelm.4c0115010.1021/acsaelm.4c01150","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01150https://doi.org/10.1021/acsaelm.4c01150","url":null,"abstract":"Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide–semiconductor interfaces and intimate knowledge of their potential landscape and charge transport. In this study, we investigated the electrical properties of epitaxial SrTiO3/GaAs heterostructures by examining the band alignment and transport behavior at the interface. We employ X-ray photoelectron spectroscopy (XPS) to measure the barriers for electrons and holes across the interface and, through them, explain the transport behavior for junctions with n- and p-type GaAs. We further show qualitative evidence of the strong photoresponse of these structures, illustrating the potential of these structures in optoelectronic devices. These results establish the fundamental groundwork for utilizing these interfaces toward new devices and define their design space.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01150","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gradient Corrosion-Resistant Copper Using Molecular Decomposable Ink from Recycling 利用回收的分子可分解油墨实现梯度耐蚀铜

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-16 DOI: 10.1021/acsaelm.4c01259

Saurabh Khuje, Abdullah Islam, Long Zhu, Jun Zhang, Zhongxuan Wang, Thomas Parker, Jian Yu, Shenqiang Ren

{"title":"Gradient Corrosion-Resistant Copper Using Molecular Decomposable Ink from Recycling","authors":"Saurabh Khuje, Abdullah Islam, Long Zhu, Jun Zhang, Zhongxuan Wang, Thomas Parker, Jian Yu, Shenqiang Ren","doi":"10.1021/acsaelm.4c01259","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01259","url":null,"abstract":"Oxidation and corrosion present significant challenges for copper in critical applications such as electronics. Graphene-like carbon materials hold promise for preventing oxidation and corrosion, but their application to metallic surfaces is hindered by a complex immobilization process. Herein, we describe copper-based molecular decomposable inks derived from recycling which enable in situ conversion to form a copper─graphitic carbon hierarchical structure. This structure withstands severe corrosive and oxidative environments and maintains stable performance across a wide temperature range, from cryogenic (−193 °C) to high temperature (500 °C) conditions. The graphitic carbon shell acts as an effective barrier, preventing oxidation and corrosion by creating lengthy diffusion routes within the hierarchical copper matrix. This enables the reliable operation of a printed antenna under a corrosive environment in a reliable fashion. The results show that the copper with a graphitic carbon shell has excellent oxidation and corrosion resistance capabilities, and the findings can be expanded to establish printed molecular decomposable materials as a platform for rapid prototyping of anticorrosion and antioxidation electronics suitable for different environmental conditions.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response 从量化的相位和振幅响应确定铁电中的压印效应

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-15 DOI: 10.1021/acsaelm.4c00875

Subhajit Pal, Emanuele Palladino, Haozhen Yuan, Muireann Anna de h-Óra, Judith L. MacManus-Driscoll, Jorge Ontaneda, Vivek Dwij, Vasant G. Sathe, Joe Briscoe

{"title":"Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response","authors":"Subhajit Pal, Emanuele Palladino, Haozhen Yuan, Muireann Anna de h-Óra, Judith L. MacManus-Driscoll, Jorge Ontaneda, Vivek Dwij, Vasant G. Sathe, Joe Briscoe","doi":"10.1021/acsaelm.4c00875","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00875","url":null,"abstract":"Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction between the tip and the sample. In this work, a detailed calibration process is presented and a procedure to identify the parasitic phase offset is demonstrated. To obtain artifact-free phase–amplitude loops, a methodology is developed by combining the outcomes from switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM). It is demonstrated that the phase and amplitude loops obtained from SS-PFM at a specific read voltage, ascertained from the surface potential by KPFM, can convey accurate electromechanical information. These methodologies are applied to quantify the imprint voltage in BaTiO3 and BiFeO3, along with vertically aligned BaTiO3:Sm2O3 and BaTiO3:MgO nanocomposites. The variation of the imprint voltage measured under different tip voltages demonstrates the importance of selecting the correct read voltage in determining the local imprint voltage. Additionally, 2D imprint voltage maps in each domain of a BaTiO3 single crystal are obtained using the datacube-PFM technique, which allows pixel-by-pixel determination of artifact-free spatial variation of PFM phase–amplitude response.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Unique VO2 Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity 基于独特 VO2 异质结的超快光电探测器配置，可实现非凡的量子效率和卓越的响应度

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-15 DOI: 10.1021/acsaelm.4c01315

Shaiju S. S., Sanjay Sajeev, Meritta James, Biswapriya Deb

{"title":"A Unique VO2 Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity","authors":"Shaiju S. S., Sanjay Sajeev, Meritta James, Biswapriya Deb","doi":"10.1021/acsaelm.4c01315","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01315","url":null,"abstract":"Metal–semiconductor–metal (MSM) photodetectors (PD) are highly versatile and beneficial in a vast array of optical and optoelectronic systems. Although vanadium dioxide (VO2) has a high broadband absorbance, its distinctive electrical and structural features have mostly been utilized for near-infrared (NIR) photodetection. Here, we propose a unique design for a PD using a heterojunction made of VO2/oxygenated-Ti (Ti–O) sandwiched between two Au electrodes. The VO2 film acts as a photon accumulator in this arrangement, and the band bending at the VO2/Ti–O interface helps to separate charges to reduce carrier recombination and inject electrons into the more conductive Ti–O layer. The design completely eliminated all size restrictions of the active layer, regardless of its electrical conductivity, and demonstrated superiority in almost all performance metrics. A remarkable photocurrent density of around 57 μA/cm2 and a rapid response time of 1–2 ms in the presence of visible light was seen at a low bias voltage of 100 mV. The highest detectivity and photocurrent density obtained in our experimental range were 3.2 × 1010 Jones, and 465 μA/cm2, respectively, using an 800 mV bias voltage and 590 nm light (power density: 76 μW/cm2). For VO2(M)-based MSM type devices, the proposed PD design exhibited the highest responsivity of approximately 2.54 A/W and an exceptional external quantum efficiency (EQE) of around 534%.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response 从量化的相位和振幅响应确定铁电中的压印效应

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-15 DOI: 10.1021/acsaelm.4c0087510.1021/acsaelm.4c00875

Subhajit Pal, Emanuele Palladino, Haozhen Yuan, Muireann Anna de h-Óra, Judith L. MacManus-Driscoll, Jorge Ontaneda, Vivek Dwij, Vasant G. Sathe and Joe Briscoe*,

{"title":"Determination of Imprint Effects in Ferroelectrics from the Quantified Phase and Amplitude Response","authors":"Subhajit Pal, Emanuele Palladino, Haozhen Yuan, Muireann Anna de h-Óra, Judith L. MacManus-Driscoll, Jorge Ontaneda, Vivek Dwij, Vasant G. Sathe and Joe Briscoe*, ","doi":"10.1021/acsaelm.4c0087510.1021/acsaelm.4c00875","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00875https://doi.org/10.1021/acsaelm.4c00875","url":null,"abstract":"Piezoresponse force microscopy (PFM) is a robust characterization technique to explore ferroelectric properties at the nanoscale. However, the PFM signal can lead to misinterpretation of results due to the dominant electrostatic interaction between the tip and the sample. In this work, a detailed calibration process is presented and a procedure to identify the parasitic phase offset is demonstrated. To obtain artifact-free phase–amplitude loops, a methodology is developed by combining the outcomes from switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM). It is demonstrated that the phase and amplitude loops obtained from SS-PFM at a specific read voltage, ascertained from the surface potential by KPFM, can convey accurate electromechanical information. These methodologies are applied to quantify the imprint voltage in BaTiO3 and BiFeO3, along with vertically aligned BaTiO3:Sm2O3 and BaTiO3:MgO nanocomposites. The variation of the imprint voltage measured under different tip voltages demonstrates the importance of selecting the correct read voltage in determining the local imprint voltage. Additionally, 2D imprint voltage maps in each domain of a BaTiO3 single crystal are obtained using the datacube-PFM technique, which allows pixel-by-pixel determination of artifact-free spatial variation of PFM phase–amplitude response.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c00875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Unique VO2 Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity 基于独特 VO2 异质结的超快光电探测器配置，可实现非凡的量子效率和卓越的响应度

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-15 DOI: 10.1021/acsaelm.4c0131510.1021/acsaelm.4c01315

Shaiju S. S., Sanjay Sajeev, Meritta James and Biswapriya Deb*,

{"title":"A Unique VO2 Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity","authors":"Shaiju S. S., Sanjay Sajeev, Meritta James and Biswapriya Deb*, ","doi":"10.1021/acsaelm.4c0131510.1021/acsaelm.4c01315","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01315https://doi.org/10.1021/acsaelm.4c01315","url":null,"abstract":"Metal–semiconductor–metal (MSM) photodetectors (PD) are highly versatile and beneficial in a vast array of optical and optoelectronic systems. Although vanadium dioxide (VO2) has a high broadband absorbance, its distinctive electrical and structural features have mostly been utilized for near-infrared (NIR) photodetection. Here, we propose a unique design for a PD using a heterojunction made of VO2/oxygenated-Ti (Ti–O) sandwiched between two Au electrodes. The VO2 film acts as a photon accumulator in this arrangement, and the band bending at the VO2/Ti–O interface helps to separate charges to reduce carrier recombination and inject electrons into the more conductive Ti–O layer. The design completely eliminated all size restrictions of the active layer, regardless of its electrical conductivity, and demonstrated superiority in almost all performance metrics. A remarkable photocurrent density of around 57 μA/cm2 and a rapid response time of 1–2 ms in the presence of visible light was seen at a low bias voltage of 100 mV. The highest detectivity and photocurrent density obtained in our experimental range were 3.2 × 1010 Jones, and 465 μA/cm2, respectively, using an 800 mV bias voltage and 590 nm light (power density: 76 μW/cm2). For VO2(M)-based MSM type devices, the proposed PD design exhibited the highest responsivity of approximately 2.54 A/W and an exceptional external quantum efficiency (EQE) of around 534%.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142309935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrathin Oxide/Metal/Oxide Trilayer Transparent Conducting Electrodes for an All-Transparent Flexible UV Photodetecting Device 用于全透明柔性紫外光检测设备的超薄氧化物/金属/氧化物三层透明导电电极

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-14 DOI: 10.1021/acsaelm.4c01397

Santanu Pal, Durga Basak

{"title":"Ultrathin Oxide/Metal/Oxide Trilayer Transparent Conducting Electrodes for an All-Transparent Flexible UV Photodetecting Device","authors":"Santanu Pal, Durga Basak","doi":"10.1021/acsaelm.4c01397","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01397","url":null,"abstract":"Amidst the rapid advancement of flexible and transparent optoelectronic devices, the oxide/metal/oxide (O/M/O) trilayer structure has been considered to be a potential transparent conducting electrode (TCE) because of its superior stability and better durability as compared to single-layered TCEs or metallic films. In this study, we report an ultrathin sputter-deposited SnO2/Cu/SnO2 trilayer TCE with excellent electrical and optical properties appropriate for flexible and transparent optoelectronic devices. All of the deposited TCE films are almost amorphous in nature with an excellent smooth surface texture, as evident from the X-ray diffraction and atomic force microscopy studies. The X-ray photoelectron spectroscopy study reveals that Cu remains in the elemental state, sandwiched between two oxide layers. The lowest resistivity value of 1.59 × 10–4 Ω·cm along with the highest figure of merit value of around 1.37 × 10–3 Ω–1 have been obtained for a 23 nm (10/3/10) trilayer. The enhanced conductivity in the films primarily results from carrier injection from the Cu layer to the oxide layer. A ZnO-based flexible and all-transparent ultraviolet photodetecting device on polyethylene terephthalate substrates featuring optimized O/M/O (10/3/10) electrodes achieves responsivity and detectivity values of 0.33 mA/W and 3.06 × 1010 Jones, respectively. The device shows a remarkably stable photoresponse under flat as well as various bend conditions. Therefore, this study provides potential ways for fabricating high-quality O/M/O TCEs across a broader spectrum of flexible and transparent optoelectronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrathin Oxide/Metal/Oxide Trilayer Transparent Conducting Electrodes for an All-Transparent Flexible UV Photodetecting Device 用于全透明柔性紫外光检测设备的超薄氧化物/金属/氧化物三层透明导电电极

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2024-09-14 DOI: 10.1021/acsaelm.4c0139710.1021/acsaelm.4c01397

Santanu Pal, and , Durga Basak*,

{"title":"Ultrathin Oxide/Metal/Oxide Trilayer Transparent Conducting Electrodes for an All-Transparent Flexible UV Photodetecting Device","authors":"Santanu Pal,  and , Durga Basak*, ","doi":"10.1021/acsaelm.4c0139710.1021/acsaelm.4c01397","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01397https://doi.org/10.1021/acsaelm.4c01397","url":null,"abstract":"Amidst the rapid advancement of flexible and transparent optoelectronic devices, the oxide/metal/oxide (O/M/O) trilayer structure has been considered to be a potential transparent conducting electrode (TCE) because of its superior stability and better durability as compared to single-layered TCEs or metallic films. In this study, we report an ultrathin sputter-deposited SnO2/Cu/SnO2 trilayer TCE with excellent electrical and optical properties appropriate for flexible and transparent optoelectronic devices. All of the deposited TCE films are almost amorphous in nature with an excellent smooth surface texture, as evident from the X-ray diffraction and atomic force microscopy studies. The X-ray photoelectron spectroscopy study reveals that Cu remains in the elemental state, sandwiched between two oxide layers. The lowest resistivity value of 1.59 × 10–4 Ω·cm along with the highest figure of merit value of around 1.37 × 10–3 Ω–1 have been obtained for a 23 nm (10/3/10) trilayer. The enhanced conductivity in the films primarily results from carrier injection from the Cu layer to the oxide layer. A ZnO-based flexible and all-transparent ultraviolet photodetecting device on polyethylene terephthalate substrates featuring optimized O/M/O (10/3/10) electrodes achieves responsivity and detectivity values of 0.33 mA/W and 3.06 × 1010 Jones, respectively. The device shows a remarkably stable photoresponse under flat as well as various bend conditions. Therefore, this study provides potential ways for fabricating high-quality O/M/O TCEs across a broader spectrum of flexible and transparent optoelectronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142310101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0