ACS Applied Electronic Materials最新文献

{"title":"Achieving High-Performance Photodetectors through Defect Passivation Enabled by Additive Engineering of Pb–Sn Mixed Perovskites","authors":"Kwang-Ro Yun,&nbsp; and ,&nbsp;Tae-Yeon Seong*,&nbsp;","doi":"10.1021/acsaelm.5c01284","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01284","url":null,"abstract":"<p >Pb–Sn mixed perovskites possess a broad absorption spectrum extending into the near-infrared (NIR) region (∼1000 nm), rendering them as suitable candidates for NIR photodetectors. However, the rapid crystallization process of Pb–Sn mixed perovskites can lead to uneven surface properties, while the swift oxidation of Sn²⁺ increases the defect density, which in turn can trap photogenerated charges and degrade the photodetector performance. Therefore, regulating the crystallization process and preventing Sn-oxidation are critical steps in developing high-performance Pb–Sn mixed perovskite photodetectors. Herein, GuSCN (GS) additive engineering was utilized to enhance the performance of Pb–Sn mixed perovskite photodetectors. The GS additive effectively suppresses Sn-oxidation, resulting in a reduced defect density. Furthermore, it enhances the lateral charge transport properties by promoting an increase in the grain size of the perovskite film. As a result, the GS-assisted photodetector achieves a remarkable responsivity of 2.82 × 10⁴ A·W^–1 and an excellent specific detectivity of 3.67 × 10¹⁴ Jones. Furthermore, the GS-assisted Pb–Sn mixed perovskite photodetector demonstrates strong NIR responsiveness, facilitating its application in photoplethysmography sensors for detecting vital biological signals. This study provides important insights for advancing next-generation optoelectronic devices based on perovskite materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7885–7895"},"PeriodicalIF":4.7,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Wearable Copper Ion Detection Sensor Enabled by Graphene Quantum Dot-Modified Vertical Aligned Carbon Nanotube Array for Potential Alzheimer’s Disease Screening","authors":"Yongsheng Yang,&nbsp;Qinqi Ren,&nbsp;Dexing Liu,&nbsp;Yang Zhu,&nbsp;Shengdong Zhang and Min Zhang*,&nbsp;","doi":"10.1021/acsaelm.5c01303","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01303","url":null,"abstract":"<p >With increasing severity of population aging, the incidence of Alzheimer’s disease (AD) is on the rise, significantly impacting the quality of life and safety of individuals. AD is characterized by multiple interrelated pathological factors, among which the accumulation of copper ions (Cu²⁺) not only accelerates the aggregation of amyloid-β peptides (Aβ), but also generates reactive oxygen species through the Fenton Reaction, leading to oxidative damage in neurons. Currently, monitoring copper ion concentrations suffers from complex processes and insufficient detection limits. In this work, we propose a novel wearable Cu²⁺ detection sensor (WCDS) based on graphene quantum dots (GQDs) integrated with a vertical carbon nanotube array (VACNT). By modification of the three-dimensional VACNT array with large specific surface area GQDs, high-precision detection of Cu²⁺ has been achieved. The WCDS demonstrates an effective linear sensing range from 100 fM to 10 nM, with a detection limit as low as 16.9 fM. The simplicity of the preparation process, along with low detection limit and great stability, positions this WCDS as a promising solution for large-scale and high-precision copper ion detection in the population. This capability provides new possibilities for early screening and monitoring the progression of Alzheimer’s disease.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7896–7903"},"PeriodicalIF":4.7,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic Integration of 2D GaSe/3D β-Ga2O3 Mixed-Dimensional Heterostructures on c-Sapphire Substrates by Molecular Beam Epitaxy","authors":"Umeshwar Reddy Nallasani,&nbsp;Nhu Quynh Diep,&nbsp;Chun-Yen Lin,&nbsp;Thi Bich Tuyen Huynh,&nbsp;Quynh Trang Tran,&nbsp;Hong-Jyun Wang,&nbsp;Wu-Ching Chou*,&nbsp;Chin-Hau Chia,&nbsp;Bi-Hsuan Lin and Sunny Saurabh,&nbsp;","doi":"10.1021/acsaelm.5c01178","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01178","url":null,"abstract":"<p >In this study, we explore the heteroepitaxial growth and characteristics of 2D GaSe/3D β-Ga₂O₃ mixed-dimensional (MD) heterostructures on c-Sapphire substrates by using molecular beam epitaxy (MBE). The β-Ga₂O₃ film, synthesized in the initial stage, exhibited high crystallinity, serving as a suitable template for subsequent GaSe growth. <i>In situ</i> reflection high-energy electron diffraction (RHEED) provided critical insights into the nucleation dynamics of 2D GaSe on 3D β-Ga₂O₃/c-Sapphire under varying epitaxial conditions. High-resolution X-ray diffraction (HR-XRD) and Raman spectroscopy further confirmed the successful monolithic integration of these MD heterostructures, exhibiting high uniformity with large surface coverage. Notably, the Ga pretreatment on the 3D β-Ga₂O₃/c-Sapphire template prior to GaSe growth effectively stabilized the surface through Se passivation, promoting uniform 2D layer growth at 425 °C compared to the nontreated counterpart. This approach preserved the integrity of the 2D/3D heterointerface, as validated by microstructural analysis. Unlike strain-free exfoliated GaSe films, the epitaxial growth in this study allowed for tunable band-edge energy attributed to the strain induced in the films by modification of the growth temperature. The resulting MD heterojunction, formed between 2D GaSe (with near band-edge emission ∼1.81 eV grown at 480 °C) and 3D β-Ga₂O₃ (∼4.96 eV), demonstrates significant potential for next-generation optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7827–7837"},"PeriodicalIF":4.7,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01178","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing the Thermoelectric Performance of Ag2S-Based Plastic Inorganic Semiconductors for Flexible Thermoelectric Generators","authors":"Junyao Jiang,&nbsp;Zheng Ye and Nianling Kuang*,&nbsp;","doi":"10.1021/acsaelm.5c01239","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01239","url":null,"abstract":"<p >The pursuit of high-performance flexible thermoelectric generators (FTEGs) for wearable electronics is facing a great challenge, and thermoelectric semiconductors should show both high thermoelectric efficiency and robust mechanical flexibility. Recently, ductile inorganic thermoelectric materials have shown promising plasticity, which provides good processability and moderate thermoelectric properties in both n- and p-type solid solutions. In this work, we first improved the thermoelectric performance of n-type Ag₂Te_0.2S_0.8 by alloying Se at the S site, resulting in a high <i>zT</i> value of 0.62 at room temperature for the Ag₂Te_0.2S_0.1Se_0.7 sample. The transition from the cubic phase to the monoclinic phase when alloying Se at the S site should be responsible for the improved thermoelectric performance and the well-maintained plasticity, which has been proven by the calculated lattice spacing. Then, the thermoelectric properties of p-type AgCuX (X = S, Se, Te) solid solutions were also improved by alloying S at the Se site and introducing tiny vacancies, showing a high <i>zT</i> value of 0.42 at room temperature for the (AgCu)_0.996Se_0.18S_0.08Te_0.74 sample. Finally, based on the warm rolling forming thick films with the optimized n- and p-type compositions, we fabricated an 18-couple FTEG with an exceptional thickness of 0.7 mm. The open circuit voltage and output power of the flexible device reached 2.32 mV and 8.81 μW at Δ<i>T</i> = 32.1 K, showing a high normalized power density. Crucially, due to the robust mechanical flexibility of these ductile thermoelectric materials and the flexible polyimide substrates, the variation of the internal resistance for the flexible device is within 1% after 1000 bending cycles. This work provides an effective strategy of simultaneously improving the thermoelectric performance and mechanical flexibility by tuning the crystal structures and also shows the possible applications of ductile inorganic semiconductors for wearable electronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7862–7871"},"PeriodicalIF":4.7,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Sensitivity ISFETs Enabled by Solution-Processed Indium Oxide and Nanoimprint Transferring Techniques","authors":"Yu-Wu Wang*,&nbsp;Kaushlendra Agrahari,&nbsp;Jiann-Heng Chen*,&nbsp;Zih-Wei Ye,&nbsp;Wen-Ting Wang,&nbsp;Hsuan-Jui Ou,&nbsp;Chun-Ying Huang and Sun-Zen Chen,&nbsp;","doi":"10.1021/acsaelm.5c00946","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00946","url":null,"abstract":"<p >This study presents a facile approach for fabricating high-performance indium oxide (In₂O₃) nanosheet thin-film transistors (TFTs) by using a combination of solution processing and nanoimprint transfer techniques. For the first time, nanostructured In₂O₃─featuring nanowire and honeycomb patterns with line widths as narrow as ∼158 and ∼89 nm, respectively─was successfully realized via a sol–gel nanoimprint strategy. The resulting nanosheet TFTs demonstrated outstanding electrical characteristics, including sharp output current profiles, a high ON/OFF current ratio, and enhanced field-effect mobility. By exploiting the advantages of nanoscale patterning and capacitive coupling in double-gate structures, the study further introduces ultrasensitive In₂O₃-based ion-sensitive field-effect transistors (ISFETs) for pH sensing, achieving a remarkable sensitivity of approximately −84.1 mV/pH. These findings not only highlight the potential of scalable nanofabrication techniques for oxide electronics but also open exciting opportunities for next-generation biomedical sensors and wearable electronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7631–7639"},"PeriodicalIF":4.7,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Composite Films of Modified Carbon Nanotubes/MXene-Aramid Nanofibers with Electromagnetic Interference Shielding and Electrical Heating Performance","authors":"Yu-Han Wang,&nbsp;Wen-Hao Geng,&nbsp;Yue-Xin Wang,&nbsp;Ze-Long Bao,&nbsp;Xuan-Chen Liu,&nbsp;Jing-Yi Feng,&nbsp;Wen-Yi Sun,&nbsp;Wei-Wei Cao* and Hong-Zhang Geng*,&nbsp;","doi":"10.1021/acsaelm.5c01195","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01195","url":null,"abstract":"<p >Motivated by the advancement of 5G communication technology, electronic devices encounter the challenge of performance fluctuations when exposed to multiband electromagnetic radiation and subjected to temperature variations. Aiming at the problem of limited performance of single-component materials, this paper proposes a design strategy for synergistically enhanced composite films. Through the collaborative action of multiple components and modulation of multidimensional architectures, the performance limitations of functional materials are overcome. Caffeic acid (CA) is employed to modify the surface of multiwalled carbon nanotubes (MWCNTs), and a three-dimensional interconnected conductive network is assembled with MXene nanosheets. Through the hydrogen-bond interfacial strengthening effect, combined with aramid nanofibers (ANF) as the matrix, CA-MWCNTs/MXene-ANF composite films are prepared. This composite film retains excellent mechanical properties with a tensile strength of 49.5 MPa and an elongation at break of 6.4%, exhibits an electromagnetic shielding effectiveness of 46 dB in the X-band, and possess a rapid electrothermal response capability, achieving a temperature increase from room temperature (25 °C) to 169 °C within 10 s when powered by a low voltage of 3 V. It overcomes the performance limitations resulting from the nonuniform dispersion of conventional fillers and poor interfacial adhesion. These advantages endow it with significant potential in diverse fields such as smart wearables, aerospace engineering, flexible electronics, and medical applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7845–7861"},"PeriodicalIF":4.7,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Centipede-Inspired Flexible Capacitive Sensor Integrated with Deep Learning for Real-Time Gesture Translation via Bimodal Time-Series Imaging","authors":"Hao Wang,&nbsp;Yang Song*,&nbsp;Feilu Wang*,&nbsp;Lang Wu,&nbsp;Tongjie Liu and Renting Hu,&nbsp;","doi":"10.1021/acsaelm.5c01032","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01032","url":null,"abstract":"<p >The demand for intelligent wearable human–machine interaction (HMI) systems is rising with the rapid advancement of flexible sensors and artificial intelligence. However, flexible capacitive sensors face challenges such as long fabrication cycles, high costs, and insufficient stability. To address these limitations, this study proposes a low-cost, scalable fabrication method inspired by the multilegged structure of centipedes. The sensor was fabricated using commercially available, inexpensive modified polymer materials through a simple assembly process, and exhibits high reliability over 10,000 cycles, sensitivity (1.69% kPa^–1, 0–20 kPa), fast response (37 ms), low hysteresis (7.02%), and robust performance under varying conditions. A real-time gesture translation system based on a smart glove was developed, which employs an improved Gramian angular field (GAF) method to convert gesture signals into dual-modality images. Integrated with MobileNetV2 and EfficientNetB1 deep learning models, the system achieves 99.73% average recognition accuracy for 25 sign language gestures with a 54.29 ms delay. The smart glove also enables wireless control of a bionic robot hand. This study provides a practical approach for fabricating flexible capacitive sensors and integrating them into real-time gesture recognition systems, offering significant value for hearing-impaired communication and potential applications in motion monitoring, underwater communication and sensing, and HMI.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7651–7667"},"PeriodicalIF":4.7,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Current–Voltage Characteristics and Resistive Switching in an Epitaxial La0.67Sr0.33MnO3/SrMnO3/La0.67Sr0.33MnO3 Multilayer","authors":"A. G. A. Rahman,&nbsp;R. K. Patel,&nbsp;Chandrani Nath and A. K. Pramanik*,&nbsp;","doi":"10.1021/acsaelm.5c01046","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01046","url":null,"abstract":"<p >In the present study, we investigate the structural properties and current–voltage (<i>I</i>–<i>V</i>) characteristics of an epitaxial multilayer composed of La_0.67Sr_0.33MnO₃ (25 nm)/SrMnO₃ (70 nm)/La_0.67Sr_0.33MnO₃ (25 nm), grown on different substrates, <i>i.e.</i>, SrTiO₃(100), LaAlO₃(100), and Si(100). The used substrates not only have different chemical compositions in line with the film materials but also have different lattice parameters, which would significantly tune the material chemistry and lattice strain at the interface. Our <i>I</i>–<i>V</i> measurements reveal distinct electrical behaviors depending on the substrate. The multilayers grown on oxide SrTiO₃(100) and LaAlO₃(100) substrates exhibit regular <i>I</i>–<i>V</i> with slight nonlinearity at low applied voltages. In contrast, <i>I</i>–<i>V</i> in a multilayer with the Si(100) substrate exhibits large asymmetry and notable resistive switching (RS) behavior at room temperature, where a resistance ratio of around 10 between the high-resistance state (HRS) and low-resistance state (LRS) is observed. While the observed <i>I</i>–<i>V</i> behavior is sensitive to substrate-induced interfacial disorder and formation of trap bands within the band gap of SrMnO₃, the present results have potential applications in future memory and memristive devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7679–7687"},"PeriodicalIF":4.7,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Confined Laser-Induced Dual Graphene Films for Multifunctional Sensors","authors":"Yunfan Li,&nbsp;Ziran Zeng,&nbsp;Peilong Li,&nbsp;Ruyu Zhang,&nbsp;Jiajie Zhan,&nbsp;Longju Yi,&nbsp;Jun Liu* and Feng Liu*,&nbsp;","doi":"10.1021/acsaelm.5c01136","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01136","url":null,"abstract":"<p >Laser-induced graphene (LIG) offers a versatile platform for high-performance sensors owing to its porous structure, good conductivity, and chemical tunability. However, the application of LIG in next-generation sensors is limited by its insufficient substrate compatibility and sensing functionality. To address these challenges, we propose a confined laser-induced dual graphene (CLDG) approach that leverages laser photothermal and shockwave effects to simultaneously fabricate graphene films on both flexible and rigid substrates. In this approach, polyimide powder confined between a thermoplastic elastomer (TPE) substrate and a glass substrate is carbonized by an infrared laser to form two face-to-face graphene films on these two substrate surfaces. The TPE-based graphene film is used to achieve a flexible piezoresistive sensor with an ultrahigh sensitivity of 400 kPa^–1 at 0–5 kPa. The application of the sensor in dynamic load testing, speech recognition, and gesture detection demonstrates its promising prospects. Meanwhile, based on the glass-based graphene film, a temperature sensor with a high sensitivity of −0.359% °C^–¹ is prepared and used for real-time detection of water temperature. These results indicate that the proposed CLDG method provides a scalable and efficient route for fabricating multifunctional sensors, advancing the practical application of laser-induced graphene technology in electronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7766–7775"},"PeriodicalIF":4.7,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Indolo[3,2-a]carbazole-Based Hole-Selective Layers for Silicon Heterojunction Solar Cells","authors":"Haritha Jalaja Raghavan,&nbsp;Rameeja T. Abdul Rasheed,&nbsp;Kiran James,&nbsp;Aldrin Antony* and Narayanapillai Manoj*,&nbsp;","doi":"10.1021/acsaelm.5c01116","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01116","url":null,"abstract":"<p >Organic–inorganic hybrid solar cells represent a promising avenue for realizing cost-effective and scalable energy solutions. Here, we introduce a hybrid heterocyclic organic small molecule, indolo[3,2-<i>a</i>]carbazole (C₁₄IC), as a prospective material for the preparation of a hole-selective layer (HSL) in silicon solar cells. The cost-effective material, which was synthesized using a single-step acid-catalyzed condensation method, is expected to be attractive from a commercial perspective compared to other expensive HSL materials like PEDOT:PSS and Spiro-OMeTAD. C₁₄IC possesses a HOMO energy of −5.39 eV and a bandgap of 3.26 eV, which provides favorable band alignment with the valence band (VB) of silicon (−5.17 eV). This enables it to function as a good HSL in silicon heterojunction solar cells. A proof-of-concept device was fabricated on an n-type textured silicon wafer using the C₁₄IC molecule for the HSL and the LiF molecule for the electron-selective layer (ESL). The optoelectronic properties of the fabricated devices were evaluated through illuminated and dark J-V measurements, along with external quantum efficiency (EQE) analysis. The devices exhibited a promising open-circuit voltage (<i>V</i>_oc) of approximately 500 mV and an average EQE of 70%. An ideality factor of 1.83 and a reverse saturation current density (J₀) of 7.08 × 10^–8 A/cm² confirmed efficient diode behavior, highlighting the potential of indolo[3,2-<i>a</i>]carbazole as a material for effective hole transfer.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7736–7744"},"PeriodicalIF":4.7,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}