ACS Applied Electronic Materials最新文献

{"title":"Yttrium Doping Effects on the Resistive Random Access Memory Characteristics of Sputtered HfOx Films and Mechanism Investigations","authors":"Kuanlin Yeh,&nbsp;Poan Shih,&nbsp;Kailing Hsu,&nbsp;Weichueh Cheng and Shengyuan Chu*,&nbsp;","doi":"10.1021/acsaelm.4c0180110.1021/acsaelm.4c01801","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01801https://doi.org/10.1021/acsaelm.4c01801","url":null,"abstract":"<p >HfO_<i>x</i>-based resistive random-access memory (RRAM) has become a widely studied memory technology due to its simple structure and compatibility with CMOS technology. However, HfO_<i>x</i>-based RRAM exhibits poor performance in terms of endurance and on/off ratio (<i>Appl. Phys. Lett.</i> 2024, <i>124</i>, 203503; <i>J. Mater. Chem. C</i> 2022, <i>10</i>, 5896–5904). In this study, the cosputtering technique was used to deposit hafnium oxide films doped with yttrium oxide, aiming to improve the RRAM characteristics of the hafnium oxide films. RRAMs were fabricated with the structure as Pt/HfYO_<i>x</i>/TiN. From the XPS analyses, Yttrium doping helped increase the proposed films’ oxygen vacancy concentration. The device exhibits optimal characteristics at a doping concentration of 0.6% compared to undoped devices. This is evidenced by an increase in endurance from 500 to 2200 cycles, which can be attributed to the SCLC conduction, and an enhancement in the on/off ratio from 23.4 to 382.4, resulting from the rise in oxygen vacancies. In addition, the slope obtained by fitting the current conduction mechanism indicates an increase in the energy barrier between the films after doping. This explains the phenomenon of high-resistance state (HRS) in HfO_<i>x</i> thin film to increase the on/off ratio of proposed films due to Yttrium-doping.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1802–1811 1802–1811"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01801","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of Sol–Gel Synthesized ZnO Nanoparticle-Incorporated Polymer-Based X-Ray Detectors: A Comparative Investigation of Device Architectures","authors":"Nevin Nur Selçuk,&nbsp;Sadullah Öztürk,&nbsp;Yalçın Kalkan,&nbsp;Ahmet Demir,&nbsp;Keziban Gegin and Arif Kösemen*,&nbsp;","doi":"10.1021/acsaelm.4c0163610.1021/acsaelm.4c01636","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01636https://doi.org/10.1021/acsaelm.4c01636","url":null,"abstract":"<p >The extensive use of X-rays in medical, security, and industrial applications has led to considerable interest in the development of advanced X-ray detection technologies. Conventional detectors based on inorganic semiconductors, such as silicon or germanium, face challenges, including high production costs and limited flexibility. This study investigates the potential of organic semiconductors, particularly ZnO nanoparticles (ZnO NPs) incorporated into a poly(3-hexylthiophene) (P3HT) matrix, for X-ray detection. The ZnO NPs, selected for their high mobility, large band gap, and thermal stability, were synthesized via a sol–gel method and integrated into P3HT to form composite layers at varying ratios (1:0.25, 1:0.5, and 1:0.75). Two different device architectures were fabricated: interdigitated (IDT) electrodes as resistive-based and diode-based devices with ITO/ZnO/P3HT/Graphite configurations. The influence of the ZnO NP concentration and device structure on X-ray detection performance was systematically investigated and evaluated. The results indicated that increasing the ZnO NP content enhanced electron transportation and improved the X-ray sensitivity of the devices. The ITO/ZnO/P3HT/Graphite device with a P3HT ratio of 1:0.75 exhibited the highest sensitivity (0.94 μGy/s) and the fastest response times, outperforming those of the IDT-based devices. This study demonstrates that organic semiconductors doped with ZnO NPs are promising candidates for cost-effective, flexible, and high-performance X-ray detectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1723–1735 1723–1735"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solution-Processed 2D Titanium Carbide MXene Electrodes for Efficient Quantum Dot Light-Emitting Diodes","authors":"Chaoyu Yu,&nbsp;Donglou Ren,&nbsp;Boyang Fu,&nbsp;Yi Wang,&nbsp;Dawei Yang,&nbsp;Yiduo Wang,&nbsp;Youbing Li and Heng Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0197010.1021/acsaelm.4c01970","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01970https://doi.org/10.1021/acsaelm.4c01970","url":null,"abstract":"<p >Indium tin oxide (ITO) is commonly used as the bottom electrode of QLEDs, which limits the application of QLEDs in low-cost flexible displays. Here, we demonstrate a high-performance QLED with solution-processed 2D Ti₃C₂T_<i>x</i> MXene bottom electrodes. The MXene is obtained by etching aluminum (Al) from titanium aluminum carbide (Ti₃AlC₂) through a simple wet chemical synthesis procedure. By improving the morphology of the MXene electrode through a heat-press process during the film formation process, QLEDs with the MXene electrodes can be successfully fabricated. Due to the reduced hole injection barrier between MXene and HIL, the resulting MXene-based QLEDs can exhibit an excellent external quantum efficiency (EQE) of 27.50% and a high current efficiency of 29.05 cd/A, which are ∼1.3- and ∼1.2-fold higher than those of conventional QLEDs, respectively. We believe that the developed high-efficiency QLEDs with solution-processed MXene electrodes will promote the practical application of QLEDs in low-cost, flexible, and transparent displays.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1775–1782 1775–1782"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of NF3, WF6, and MoF6 Additive Gases on High Aspect Ratio Contact SiO2 Etching in c-C4F8/C4F6/Ar/O2 Plasmas","authors":"Hyun Woo Tak,&nbsp;Chan Hyuk Choi,&nbsp;Seong Bae Kim,&nbsp;Myeong Ho Park,&nbsp;Jun Soo Lee,&nbsp;Akihide Sato,&nbsp;Bong Sun Kim,&nbsp;Jun Ki Jang,&nbsp;Eun Koo Kim,&nbsp;Dong Woo Kim* and Geun Young Yeom*,&nbsp;","doi":"10.1021/acsaelm.4c0223910.1021/acsaelm.4c02239","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02239https://doi.org/10.1021/acsaelm.4c02239","url":null,"abstract":"<p >Etch profile control of high aspect ratio contact (HARC) is one of the key issues in developing next-generation memory device manufacturing because the HARC etch result can determine the device integration and device performance. In this study, the effect of F-based additive gases such as nitrogen trifluoride (NF₃), tungsten hexafluoride (WF₆), and molybdenum hexafluoride (MoF₆) on the HARC SiO₂ etching was investigated. A few sccm of NF₃, WF₆, and MoF₆ added to the base gas recipe did not change the SiO₂ etch rate and etch selectivity over the amorphous carbon layer (ACL) noticeably. However, the addition of NF₃ flow enlarged the etched HARC SiO₂ top hole size by decreasing the polymer layer thickness deposited on the sidewall. On the contrary, metal-containing additive gases such as WF₆ and MoF₆ resulted in decreased HARC SiO₂ top hole size enlargement. For the base recipe and with NF₃ addition, distorted and oval-shaped SiO₂ bottom holes were observed possibly due to the charging of the SiO₂ sidewall during the etching. But, for the addition of WF₆ and MoF₆, rather circular-shaped SiO₂ bottom holes could be observed possibly due to the decreased SiO₂ sidewall charging by the formation of a more conductive polymer through the inclusion of metals.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1953–1965 1953–1965"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Organic Transistors for Color Recognition and Nature-Inspired Synaptic Function Simulation: Performance and Stability","authors":"Somnath Bhattacharjee,&nbsp;Gargi Konwar,&nbsp;Anurag Dwivedi and Shree Prakash Tiwari*,&nbsp;","doi":"10.1021/acsaelm.4c0233210.1021/acsaelm.4c02332","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02332https://doi.org/10.1021/acsaelm.4c02332","url":null,"abstract":"<p >Pursuit of replicating intricate cognitive functions demands enhanced efficiency, reduced power consumption, and superior parallel computing capabilities, driving the evolution of brain-inspired computing, which has been demonstrated through artificial synaptic devices. Among these, photosensitive organic synaptic transistors (POSTs) emerge as exceptional candidates due to their ability to integrate sensory and computational functionalities under optical stimuli. In this study, flexible POSTs were demonstrated with biocompatible poly(4-vinylpyridine) (PVPyr) as the gate dielectric and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the active layer. These POSTs exhibited high performance, achieving −10 V operation with excellent saturation in output characteristics, a maximum mobility of ∼0.5 cm²/(V s), and a current on–off ratio of ∼10³ for the p-channel operation. Moreover, remarkable operational, electro-mechanical, and environmental stability was observed from these devices, making them suitable for long-term practical applications. Most importantly, the POSTs demonstrated notable color recognition capabilities for both blue and green light, with a maximum photo responsivity of ∼92 mA/W and an external quantum efficiency of ∼25% for blue color. These devices also successfully emulated synaptic behaviors, including pulse-paired facilitation (PPF) and transitions from short-term plasticity (STP) to long-term plasticity (LTP) under visible light stimulation, while their low power consumption enabled responses that closely mimic biological synapses. Our results indicate a significant step toward the development of eco-friendly, high-performance devices for bioinspired artificial sensory systems. The demonstrated dynamic learning capabilities and efficient information storage pave the way for future applications in brain-inspired computing, neuro-prosthetics, and wearable smart technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2065–2074 2065–2074"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the Effects of Hydrogen on the Growth and Properties of GaN Nanowires Using VLS-HVPE","authors":"Cheng-Chih Hsiang,&nbsp;Yu-Hsin Wang,&nbsp;Wei-Ting Lin,&nbsp;Chang-Hsun Huang,&nbsp;Chia-Yi Wu and Yi-Chia Chou*,&nbsp;","doi":"10.1021/acsaelm.4c0201010.1021/acsaelm.4c02010","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02010https://doi.org/10.1021/acsaelm.4c02010","url":null,"abstract":"<p >In this study, gallium nitride (GaN) nanowires were successfully synthesized via the vapor–liquid–solid mechanism within a hydride vapor phase epitaxy technique on different substrates. By optimizing the growth conditions with hydrogen as an additional carrier gas, we found that the morphology of GaN nanowires was significantly altered from wire-like to rod-like compared to the conventional method using nitrogen alone. The optical quality of as-grown nanowires was enhanced, demonstrated by a marked photoluminescence (PL) peak at the near-band edge of GaN and a distinct reduction in defect-related PL yellow emissions. These effects were especially notable in the nanowires grown on MoS₂ substrates, which are promising candidates for future electronic devices. Scanning transmission electron microscopy revealed the significant influence of hydrogen on the microstructure and orientation of the nanowires. Energy dispersive X-ray spectroscopy analysis indicated that the gallium concentration at the nanowire tips, also called the catalyst, varies with the two types of growth orientation. Furthermore, the GaN nanowires grown on MoS₂ exhibit enhanced piezoelectric properties compared to previous reports due to the growth orientation control. These findings highlight the production of high-quality GaN nanowires and offer valuable insights into the role of hydrogen in influencing the growth dynamics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1783–1791 1783–1791"},"PeriodicalIF":4.3,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02010","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Steep Subthreshold Slope in Solution-Gated Indium–Tin–Oxide-Based One-Piece Thin-Film Transistor Enables Highly Sensitive Biosensing","authors":"Ritsu Katayama,&nbsp;Xianqi Dong and Toshiya Sakata*,&nbsp;","doi":"10.1021/acsaelm.4c0215810.1021/acsaelm.4c02158","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02158https://doi.org/10.1021/acsaelm.4c02158","url":null,"abstract":"<p >Solution-gated two-dimensional material-like thin-film transistors (2D-like TFTs) have made it possible to realize miniaturized and portable biosensors as electronic devices. As one of the transistor characteristics, a steep subthreshold slope (SS) must increase the detection sensitivity to target biomolecules because a slight change in gate potential is translated into a large rate of change in drain current (<i>I</i>_DS). The 2D-like TFT biosensor we developed, a solution-gated one-piece indium–tin–oxide-based TFT (one-piece ITO-TFT), intrinsically shows a steep SS near the thermal limit (60 mV/decade) owing to the absence of interfaces in the source/channel/drain electrodes and the relatively large electrical double-layer capacitance at the electrolyte solution/ITO channel interface. In this study, we have demonstrated the increase in detection sensitivity on the basis of the rate of change in <i>I</i>_DS measured in the subthreshold region using the one-piece ITO-TFT with a steep SS. The detection sensitivity to DNA hybridization as a model of biomolecular recognition events measured in the subthreshold region was about 6.6 times higher than that measured in the linear region, as expected from the theoretical assumption. Moreover, the limit of detection (LOD) was almost at the same concentration even when measured in either the subthreshold or linear region. This is because LOD strongly depended on the binding constant (<i>K</i>_a) of DNA hybridization rather than the detection sensitivity. Considering the above, the <i>I</i>_DS measurement in the subthreshold region using transistors with a steep SS definitely contributes to the increase in detection sensitivity, whereas LOD would be based on <i>K</i>_a regardless of the detection region.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1862–1870 1862–1870"},"PeriodicalIF":4.3,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Dependence of the Electronic Band Structure in Layered γ-InSe","authors":"Runze Liu,&nbsp;Fanxiang Meng,&nbsp;Yi Lian,&nbsp;Yichen Yang,&nbsp;Zhengtai Liu,&nbsp;Jingwei Dong* and Zhongwei Chen*,&nbsp;","doi":"10.1021/acsaelm.5c0007810.1021/acsaelm.5c00078","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00078https://doi.org/10.1021/acsaelm.5c00078","url":null,"abstract":"<p >Indium selenide (InSe), a layered semiconductor, has garnered significant attention for its exceptional properties, particularly in the field of optoelectronics. While temperature variations have been shown to influence the electronic band structure of InSe, the underlying mechanisms driving these changes remain insufficiently explained. In this study, we investigated the temperature-dependent electronic band structure of InSe using angle-resolved photoelectron spectroscopy (ARPES), quantitatively characterizing the valence band shifts. Further density functional theory (DFT) calculations reveal that lattice contributions to the band structure vary with temperature: positive contributions from lattices <i>a</i> and <i>b</i> contrast with a negative contribution from lattice <i>c</i>.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1718–1722 1718–1722"},"PeriodicalIF":4.3,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantification of Oxygen Vacancies in SrFe0.5Cr0.5O3−δ Thin Films: Correlating Lattice Expansion with Oxidation State Variability","authors":"Mohammad Delower Hossain,&nbsp;Krishna Prasad Koirala,&nbsp;Le Wang*,&nbsp;Widitha S. Samarakoon,&nbsp;Mark E. Bowden,&nbsp;Zengqing Zhuo,&nbsp;Wanli Yang,&nbsp;Zhenxing Feng,&nbsp;Hua Zhou,&nbsp;Scott A. Chambers,&nbsp;Peter V. Sushko and Yingge Du*,&nbsp;","doi":"10.1021/acsaelm.4c0214910.1021/acsaelm.4c02149","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02149https://doi.org/10.1021/acsaelm.4c02149","url":null,"abstract":"<p >Oxygen vacancies (V_O), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the V_O concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify V_O concentrations in SrFe_0.5Cr_0.5O_3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the <i>c</i>-axis lattice expansion detected in SFCO films with a V_O concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr⁵⁺ to Cr³⁺) is observed as the V_O concentration increases, while the Fe oxidation state remains fixed at Fe³⁺. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1883–1890 1883–1890"},"PeriodicalIF":4.3,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Trapped-Exciton Radiative Recombination in β–Ga2O3: Impact of Two Concurrent Nonradiative Auger Processes","authors":"Vytautas Grivickas*,&nbsp;Patrik Ščajev,&nbsp;Saulius Miasojedovas,&nbsp;Lars Voss and Paulius Grivickas,&nbsp;","doi":"10.1021/acsaelm.4c0209910.1021/acsaelm.4c02099","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02099https://doi.org/10.1021/acsaelm.4c02099","url":null,"abstract":"<p >The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga₂O₃ crystals are studied via time-resolved techniques of induced absorption, transient grating, and photoluminescence (PL) at room temperature. The excitation above the bandgap is produced by laser pulses with linear light polarization parallel and orthogonal in the (−201) and (001) planes. We elucidate that the nonradiative recombination rate occurring in the eXciton prevails over its radiative emission rate in a wide range of free carrier concentration composed of excited and equilibrium electrons. Hence, the nonradiative recombination has no effect on the strong anisotropy and the shape of the eXciton emission band. However, we find out that the conventional ABC model of electron effective lifetime is insufficient for explanation of the excitation dependences. Inclusion of two nonradiative Auger mechanisms in a modified ABC formula provides excellent agreement of these dependences. We conclude that the trap-assisted Auger process is in proportion to the free electron density with coefficient B = 1.1 × 10^–11 cm³/s and appears at low/intermediate excitation, while the triple-particle Auger process is in proportion to Δ<i>n</i>² with coefficient C = 8 × 10^–30 cm⁶/s and appears at high excitation conditions. The transition between two Auger mechanisms is accompanied by a rise of the eXciton diffusivity in preferred crystallographic directions where the radiative PL intensity is maximal. The diffusion length <i>L</i>_D in these directions can reach values ∼300 nm, but, at high excitations, <i>L</i>_D becomes limited by Auger lifetimes. These findings pave the way for the implementation of self-trapped eXcitons into specific optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1829–1841 1829–1841"},"PeriodicalIF":4.3,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02099","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}