Indolo[3,2-a]carbazole-Based Hole-Selective Layers for Silicon Heterojunction Solar Cells

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Haritha Jalaja Raghavan, Rameeja T. Abdul Rasheed, Kiran James, Aldrin Antony* and Narayanapillai Manoj*, 
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Abstract

Organic–inorganic hybrid solar cells represent a promising avenue for realizing cost-effective and scalable energy solutions. Here, we introduce a hybrid heterocyclic organic small molecule, indolo[3,2-a]carbazole (C14IC), as a prospective material for the preparation of a hole-selective layer (HSL) in silicon solar cells. The cost-effective material, which was synthesized using a single-step acid-catalyzed condensation method, is expected to be attractive from a commercial perspective compared to other expensive HSL materials like PEDOT:PSS and Spiro-OMeTAD. C14IC possesses a HOMO energy of −5.39 eV and a bandgap of 3.26 eV, which provides favorable band alignment with the valence band (VB) of silicon (−5.17 eV). This enables it to function as a good HSL in silicon heterojunction solar cells. A proof-of-concept device was fabricated on an n-type textured silicon wafer using the C14IC molecule for the HSL and the LiF molecule for the electron-selective layer (ESL). The optoelectronic properties of the fabricated devices were evaluated through illuminated and dark J-V measurements, along with external quantum efficiency (EQE) analysis. The devices exhibited a promising open-circuit voltage (Voc) of approximately 500 mV and an average EQE of 70%. An ideality factor of 1.83 and a reverse saturation current density (J0) of 7.08 × 10–8 A/cm2 confirmed efficient diode behavior, highlighting the potential of indolo[3,2-a]carbazole as a material for effective hole transfer.

Abstract Image

基于吲哚[3,2-a]咔唑的硅异质结太阳能电池的孔选择层
有机-无机混合太阳能电池代表了实现具有成本效益和可扩展的能源解决方案的有前途的途径。本文介绍了一种杂环有机小分子吲哚[3,2-a]咔唑(C14IC),作为硅太阳能电池中制备孔选择层(HSL)的有前景的材料。该材料采用单步酸催化缩合法合成,从商业角度来看,与PEDOT:PSS和Spiro-OMeTAD等其他昂贵的HSL材料相比,预计具有吸引力。C14IC具有−5.39 eV的HOMO能和3.26 eV的带隙,与硅(−5.17 eV)的价带(VB)具有良好的能带对准性。这使得它在硅异质结太阳能电池中具有良好的HSL功能。采用C14IC分子作为HSL层,liff分子作为电子选择层(ESL),在n型纹理硅片上制作了概念验证器件。通过照明和黑暗J-V测量以及外部量子效率(EQE)分析来评估所制备器件的光电性能。该器件具有良好的开路电压(Voc),约为500 mV,平均EQE为70%。理想系数为1.83,反向饱和电流密度(J0)为7.08 × 10-8 a /cm2,证实了高效二极管的行为,突出了吲哚[3,2-a]咔唑作为有效空穴转移材料的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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