ACS Applied Materials & Interfaces最新文献

{"title":"Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3−δ/Nb:SrTiO3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition","authors":"Rui Su, Dunbao Chen, Weiming Cheng, Ruizi Xiao, Yuheng Deng, Yufeng Duan, Yi Li, Lei Ye, Hongyu An, Jingping Xu, Peter To Lai, Xiangshui Miao","doi":"10.1021/acsami.4c07951","DOIUrl":"https://doi.org/10.1021/acsami.4c07951","url":null,"abstract":"Neuromorphic computing, inspired by the brain’s architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO_3−δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO₃ (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface Property Regulation of a Magnetron-Sputtered NiOx Hole Transport Layer for High-Performance Inverted Perovskite Solar Cells","authors":"Zheng Lv, Guozhen Liu, Zhiyong Wang, Yilin Gao, Wei Lu, Jiazhen Wei, Linghui Zhang, Pengfei Wang, Ying Yan, Yantao Shi, Jiming Bian","doi":"10.1021/acsami.4c14300","DOIUrl":"https://doi.org/10.1021/acsami.4c14300","url":null,"abstract":"The inverted perovskite solar cells (PSCs) are gaining increasing attention recently for their unprecedented advantages, such as better integration with tandem and flexible designs, negligible hysteresis, good operational stability, and compatibility with commercially scalable fabrication approaches. Nickel oxide (NiOx) films prepared by magnetron sputtering technology exhibit excellent scalability and reproducibility, which could well meet the requirements of the large-scale production of inverted PSCs. However, NiOx prepared by vacuum methods generally has fewer surface hydroxyl groups, deteriorating the wettability and damaging the interface contact with the perovskite. Particularly, the Ni³⁺ defects on the NiOx surface could lead to unfavorable redox reactions with organic cations in the perovskite under high temperatures, promoting the rapid degradation of the perovskite. Thus, surface regulation of sputtered NiOx is imperative for high-performance PSCs. Herein, 4-(trifluoromethyl) phenylcarbamate hydrochloride (TFFA) was used to regulate the surface properties of sputtered NiOx. The strongly electronegative F ions in TFFA passivated the Ni³⁺ defects on the NiOx surface, suppressed unfavorable interface reactions, and improved charge recombination. The polar ammonium functional group was used to adjust the surface energy of NiOx, thereby improving the wettability and optimizing the crystallization kinetics of the perovskite. As a result, the power conversion efficiency (PCE) of PSCs reached 22.76%, which was among the highest PCEs reported for sputtered NiOx-based inverted PSCs to date. Moreover, the unencapsulated target devices exhibited better stability, maintaining over 85% of the initial PCE after aging for approximately 1200 h in a N₂ environment. Our achievements pointed out a practical strategy for enhancing the performance of sputtered NiOx-based inverted PSCs, which could potentially accelerate the development and application of large-area PSCs.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Situ Functionalization of Polar Polythiophene-Based Organic Electrochemical Transistor to Interface In Vitro Models","authors":"Sebastian Buchmann, Pepijn Stoop, Kim Roekevisch, Saumey Jain, Renee Kroon, Christian Müller, Mahiar M. Hamedi, Erica Zeglio, Anna Herland","doi":"10.1021/acsami.4c09197","DOIUrl":"https://doi.org/10.1021/acsami.4c09197","url":null,"abstract":"Organic mixed ionic-electronic conductors are promising materials for interfacing and monitoring biological systems, with the aim of overcoming current challenges based on the mismatch between biological materials and convectional inorganic conductors. The conjugated polymer/polyelectrolyte complex poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT/PSS) is, up to date, the most widely used polymer for in vitro or in vivo measurements in the field of organic bioelectronics. However, PEDOT/PSS organic electrochemical transistors (OECTs) are limited by depletion mode operation and lack chemical groups that enable synthetic modifications for biointerfacing. Recently introduced thiophene-based polymers with oligoether side chains can operate in accumulation mode, and their chemical structure can be tuned during synthesis, for example, by the introduction of hydroxylated side chains. Here, we introduce a new thiophene-based conjugated polymer, p(g₄2T-T)-8% OH, where 8% of the glycol side chains are functionalized with a hydroxyl group. We report for the first time the compatibility of conjugated polymers containing ethylene glycol side chains in direct contact with cells. The additional hydroxyl group allows covalent modification of the surface of polymer films, enabling fine-tuning of the surface interaction properties of p(g₄2T-T)-8% OH with biological materials, either hindering or promoting cell adhesion. We further use p(g₄2T-T)-8% OH to fabricate the OECTs and demonstrate for the first time the monitoring of epithelial barrier formation of Caco-2 cells in vitro using accumulation mode OECTs. The conjugated polymer p(g₄2T-T)-8% OH allows organic-electronic-based materials to be easily modified and optimized to interface and monitor biological systems.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient Delivery of siRNA via Tetrahedral Framework Nucleic Acids: Inflammation Attenuation and Matrix Regeneration in Temporomandibular Joint Osteoarthritis","authors":"Shengnan Liao, Zhiqiang Liu, Weitong Lv, Songhang Li, Taoran Tian, Yifan Wang, Haoyan Wu, Zhi-He Zhao, Yunfeng Lin","doi":"10.1021/acsami.4c11089","DOIUrl":"https://doi.org/10.1021/acsami.4c11089","url":null,"abstract":"Temporomandibular joint osteoarthritis (TMJOA) is the most common and severe subtype of temporomandibular disease characterized by inflammation and cartilage matrix degradation. Compared with traditional conservative treatment, small interfering RNAs (siRNAs) have emerged as a more efficient gene-targeted therapeutic tool for TMJOA treatment. Nuclear factor kappaB (NF-κB) is a transcription factor orchestrating the inflammatory processes in the pathogenesis of TMJOA. Employing siRNA-NF-κB could theoretically control the development of TMJOA. However, the clinical applications of siRNA-NF-κB are limited by its structural instability, poor cellular uptake, and short TMJ retention. To overcome these shortcomings, we developed a tetrahedral framework nucleic acid (tFNA) system carrying siRNA-NF-κB, named Tsi. The results indicated that Tsi exhibited excellent structural stability and excellent cellular uptake efficiency. It also demonstrated a superior NF-κB silencing effect over siRNA alone, attenuating the activation of NF-κB and upregulating the NRF2/HO-1 pathway. This system effectively reduced the release of inflammatory factors and reactive oxygen species (ROS), inhibiting cellular oxidative stress and apoptosis. <i>In vivo</i>, Tsi displayed enhanced TMJ retention capacity in comparison to siRNA alone and offered significant protective effects on both the cartilage matrix and subchondral bone, presenting a promising approach for TMJOA treatment.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amino Acid-Based Poly(ester urea) Biodegradable Membrane for Guided Bone Regeneration","authors":"Renan Dal-Fabbro, Caroline Anselmi, W. Benton Swanson, Lais Medeiros Cardoso, Priscila T. A. Toledo, Arwa Daghrery, Darnell Kaigler, Alexandra Abel, Matthew L. Becker, Sherif Soliman, Marco C. Bottino","doi":"10.1021/acsami.4c09742","DOIUrl":"https://doi.org/10.1021/acsami.4c09742","url":null,"abstract":"Barrier membranes (BM) for guided bone regeneration (GBR) aim to support the osteogenic healing process of a defined bony defect by excluding epithelial (gingival) ingrowth and enabling osteoprogenitor and stem cells to proliferate and differentiate into bone tissue. Currently, the most widely used membranes for these approaches are collagen-derived, and there is a discrepancy in defining the optimal collagen membrane in terms of biocompatibility, strength, and degradation rates. Motivated by these clinical observations, we designed a collagen-free membrane based on <span>l</span>-valine-<i>co</i>-<span>l</span>-phenylalanine-poly(ester urea) (PEU) copolymer via electrospinning. Degradation and mechanical properties of these membranes were performed on as-spun and water-aged samples. Alveolar-bone-derived stem cells (AvBMSCs) were seeded on the PEU BM to assess their cell compatibility and osteogenic characteristics, including cell viability, attachment/spreading, proliferation, and mineralized tissue-associated gene expression. <i>In vivo</i>, PEU BMs were subcutaneously implanted in rats to evaluate their potential to cause inflammatory responses and facilitate angiogenesis. Finally, critical-size calvarial defects and a periodontal model were used to assess the regenerative capacity of the electrospun PEU BM compared to clinically available Cytoflex synthetic membranes. PEU BM demonstrated equal biocompatibility to Cytoflex with superior mechanical performance in strength and elasticity. Additionally, after 14 days, PEU BM exhibited a higher expression of BGLAP/osteocalcin and superior <i>in vivo</i> performance–less inflammation and increased CD31 and VWF expression over time. When placed in critical-sized defects in the calvaria of rats, the PEU BM led to robust bone formation with high expression of osteogenesis and angiogenesis markers. Moreover, our membrane enhanced alveolar bone and cementum regeneration in an established periodontal model after 8 weeks. We demonstrate that the PEU BM exhibits favorable clinical properties, including mechanical stability, cytocompatibility, and facilitated bone formation <i>in vitro</i> and <i>in vivo.</i> This highlights its suitability for GBR in periodontal and craniofacial bone defects.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Superior Hole Injection Material PEGDT/TPF/PVDF with p-Doping Capability for Highly Efficient Solution-Processed Organic Light-Emitting Diode","authors":"Hong Xu, Hao Yan, Junmin Chen, Xiaopeng Zhang, Pengli Zhang, Hongyang Li, Hong Meng","doi":"10.1021/acsami.4c11124","DOIUrl":"https://doi.org/10.1021/acsami.4c11124","url":null,"abstract":"The ability to charge injection is a key factor in determining the performance of the organic light-emitting diode (OLED) devices. Improving the work function of the anode surface via interface modification, thus lowering the hole injection barrier, stands as a crucial strategy for enhancing the performance of the OLED device. Herein, we propose an innovative p-doping hole injection material, namely, PEGDT/TPF/PVDF that exhibits excellent performance in OLED devices with the value of maximum current efficiency at 56.4 Cd A^–1, maximum luminescence at 25,564 Cd m^–2, and a high EQE of 19.8%. The results for PEGDT/TPF/PVDF showed good conductivity, excellent film-forming property, and high transmittance over 98% in the spectrum range of 500–700 nm. Changes in the hole-injection energy barriers observed from the surface of the anode suggest a modified anode with PEGDT/TPF/PVDF deepened the work function at a value of 0.2 eV, which dramatically improves the hole-injection properties. This work not only provides novel structural materials with exceptional hole-injection properties but also proposes a promising alternative to PEDOT/PSS.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrostatic Modulation for Enhanced Ion Selectivity in Gate-All-Around Multilayer Stacked Graphene Nanopore","authors":"Niketa AK, Shishir Kumar","doi":"10.1021/acsami.4c13281","DOIUrl":"https://doi.org/10.1021/acsami.4c13281","url":null,"abstract":"Biological ion channels exhibit exceptional gating capabilities for regulated transport and filtration across cell membranes. This study explores similar gating functions in artificial nanopores using graphene membranes. By applying direct voltage, we can dynamically control ion distribution around nanopores, allowing for real-time triggering, dynamic flow control, and adaptability to varying pore sizes. We investigate electrostatic modulation of ion transport in a stacked nanoporous graphene configuration, which mitigates defects from growth and transfer processes. Nanopores are created using oxygen plasma, enabling fine-tuning of ion transport. External voltage enhances ion conductivity at positive voltages and reduces it at negative voltages, demonstrating significant modulation by the surface potential-induced electric double layer (EDL). Voltage-dependent ion enrichment and depletion within the nanopores affect the effective surface charge density, facilitating controllable ion sieving. Results show that nanopores, with sizes comparable to hydrated ion diameters, achieve high and tunable voltage-gating functionality, enabling efficient on-demand ion transport. Voltage-gating effectively tunes ion selectivity in multilayer stacked graphene membranes, with negative voltages impeding divalent cations and positive voltages mimicking biological K⁺ nanochannels. This research lays the foundation for developing nanopores with tunable ion selectivity for applications in energy conversion, ion separation, and nanofluidics.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping","authors":"Wenjie Shu, Yuxia Tang, Bingwen Su, Aijun Hong, Lin Lin, Xiaohui Zhou, Zhibo Yan, Jun-Ming Liu","doi":"10.1021/acsami.4c05454","DOIUrl":"https://doi.org/10.1021/acsami.4c05454","url":null,"abstract":"Recently, the p-type semiconductor AgSbTe₂ has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300–700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag₂Te impurities. Herein, we synthesized AgSb_1–<i>x</i>Cu_<i>x</i>Te₂ (<i>x</i> = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe₂. Our results indicate that Cu doping suppresses the Ag₂Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag₂Te impurities and the phonon softening of the AgSb_1–<i>x</i>Cu_<i>x</i>Te₂. Overall, Cu doping improves the <i>ZT</i> of AgSb_1–<i>x</i>Cu_<i>x</i>Te₂. Among all samples, AgSb_0.96Cu_0.04Te₂ has a maximum <i>ZT</i> of ∼1.45 at 498 K and an average <i>ZT</i> of ∼1.11 from 298 to 573 K.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Targeted Gold Nanoclusters for Synergistic High-Risk Neuroblastoma Therapy through Noncanonical Ferroptosis","authors":"Liyuan Xue, Kaidi Luo, Kaixiao Hou, Wendi Huo, Panpan Ruan, Yilin Xue, Xiuxiu Yao, Cong Meng, Dongfang Xia, Yuhua Tang, Wencong Zhao, Hui Yuan, Liang Zhao, Liang Gao, Qing Yuan, Xueyun Gao, Kai Cao","doi":"10.1021/acsami.4c11979","DOIUrl":"https://doi.org/10.1021/acsami.4c11979","url":null,"abstract":"Children with extracranial high-risk neuroblastoma (NB) have a poor prognosis due to resistance against apoptosis. Recently, ferroptosis, another form of programmed cell death, has been tested in clinical trials for high-risk NB; however, drug resistance and side effects have also been observed. Here, we find that the gold element in gold nanoclusters can significantly affect iron metabolism and sensitize high-risk NB cells to ferroptosis. Accordingly, we developed a gold nanocluster conjugated with a modified NB-targeting peptide. This gold nanocluster, namely, NANT, shows excellent NB targeting efficiency and dramatically promotes ferroptosis. Surprisingly, this effect is exerted by elevating the noncanonical ferroptosis pathway, which is dependent on heme oxygenase-1-regulated Fe(II) accumulation. Furthermore, NANT dramatically inhibits the growth of high-risk NB in both tumor spheroid and xenograft models by promoting noncanonical ferroptosis evidenced by enhanced intratumoral Fe(II) and heme oxygenase-1. Importantly, this strategy shows excellent cardiosafety, offering a promising strategy to overcome ferroptosis resistance for the efficient and safe treatment of children with high-risk neuroblastoma.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revealing Bipolar Photoresponse in Multiheterostructured WTe2–GaTe/ReSe2–WTe2 P–N Diode by Hybrid 2D Contact Engineering","authors":"Ehsan Elahi, Muhammad Rabeel, Bilal Ahmed, Jamal Aziz, Muhammad Suleman, Muhammad Asghar Khan, Shania Rehman, Arslan Rehmat, Muhammad Asim, Malik Abdul Rehman, Ahmad A. Ifseisi, Mohamed E. Assal, Muhammad Farooq Khan, Sungho Kim","doi":"10.1021/acsami.4c08166","DOIUrl":"https://doi.org/10.1021/acsami.4c08166","url":null,"abstract":"The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p–n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p–n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p–n diode based on multiheterostructure configuration, WTe₂–GaTe-ReSe₂–WTe₂, where WTe₂ acts as heterocontact with GaTe/ReSe₂ junction. Our devices with heterocontacts of WTe₂ showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 10⁶ with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (<i>I</i>_ph) is measured around 312 nA at V_ds = 0.5 V. The device showed a high responsivity (<i>R</i>) of 4.7 × 10⁴ m·AW^–1, maximum external quantum efficiency (EQE) of 2.49 × 10⁴ (%), and detectivity (<i>D</i>*) of 2.1 × 10¹¹ Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe₂–GaTe-ReSe₂–WTe₂ devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe–ReSe₂ heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":9.5,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142325395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}