ACS Applied Materials & Interfaces最新文献

{"title":"Compressive Strain-Induced Uphill Hydrogen Distribution in Strontium Ferrite Films","authors":"Muhammad Umer Fayaz, Qian Wang, Min Xu, Di Chen, Feng Pan, Cheng Song","doi":"10.1021/acsami.4c21825","DOIUrl":"https://doi.org/10.1021/acsami.4c21825","url":null,"abstract":"Hydrogen incorporation into metal oxides enhances their electrochemical properties, making them highly suitable for various energy conversion applications. The controlled distribution of hydrogen ions in material systems and their conduction at elevated temperatures have garnered significant attention for various energy storage and environmental monitoring applications, including fuel cells, smart windows, and sensor technologies. In this work, cost-effective, high-concentration hydrogen-doped SrFeO_3−δ (HSrFeO_3−δ) films were prepared under ambient conditions by treating Al(s)|SrFeO_3−δ(s) films with KOH(aq), utilizing electron–proton codoping to investigate hydrogen distribution. The uphill hydrogen distributions in SrFeO_3−δ films with compressive strain, in contrast to the density gradient behavior under tensile strain, suggest the fundamental role of the strain states in the hydrogen accommodation. Compressively strained films with a rich Al source follow an anomalous uphill feature of hydrogen distribution, highlighting their potential use as electrolyte for fuel cells. The strain significantly influences the structure, chemical lattice coupling, and consequently the ionic transport in SrFeO_3−δ. Ionic conductivity measurements reveal that compressively strained HSrFeO_3−δ films with uphill hydrogen distributions exhibit a significant ionic conductivity of 0.189 S/cm at 413 K, with an activation energy of approximately 0.29 eV, making them suitable for low-temperature electrochemical applications. These findings provide a promising approach for tuning material properties and valuable insights for building iontronic devices.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"1 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile Hydrophobic Polymer Coating of Metal–Organic Frameworks for Insulating Materials with Low Dielectric Constant","authors":"Yuki Ohara, Daiki Akutsu, Hiromi Morita, Teruhiko Saito","doi":"10.1021/acsami.5c01976","DOIUrl":"https://doi.org/10.1021/acsami.5c01976","url":null,"abstract":"We report a gentle, one-pot polymer coating method for metal–organic frameworks (MOFs) utilizing silane coupling chemistry. A polymer composed of styrene–butadiene–styrene (SBS) with alkoxysilyl side groups was coated onto zeolitic imidazolate framework-8 (ZIF-8) and Universitet Oslo-67 (UiO-67) surfaces by simply mixing the MOF and polymer in toluene at room temperature. X-ray photon spectroscopy and N₂ adsorption isotherms suggested that the polymer was immobilized on the MOF surface through the interaction between the metal sites and silyl groups. Polymer surface coverage was enhanced by ball milling while preserving the porosity of the MOFs. The polymer-coated MOFs exhibited higher hydrophobicity, wettability to toluene, and stability in water and acid than those of the uncoated MOFs and the MOFs modified with dodecyltrimethoxysilane.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"29 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143703158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Functionalization of Defective Zr-MOFs for Water Decontamination: Mechanistic Insight into the Competitive Roles of -NH₂ and -SH Sites in the Removal of Hg(II) Ions.","authors":"Zahra Sharifzadeh, Sayed Ali Akbar Razavi, Ali Morsali","doi":"10.1021/acsami.3c15863","DOIUrl":"10.1021/acsami.3c15863","url":null,"abstract":"<p><p>Functional metal-organic frameworks (MOFs), especially those based on sulfur and nitrogen atoms, were frequently applied for the removal of Hg(II) ions. However, a systematic study on the cooperative or competitive roles of -SH and -NH₂ functions in the presence of secondary mechanisms (proton transfer and redox) is still rare. In this work, the UiO-66 framework (Zr₆(OH)₄O₄(BDC)₆, BDC^2- = benzene-1,4-dicarboxylate) was decorated with functional monocarboxylate linkers including glycine (Gly), mercaptopropionic acid (Mer), and cysteine (Cys). Due to the molecular similarity of these functional linkers, the coordination affinity between the amine and thiol sites with Hg(II) ions can be compared, and the effect of proton transfer and redox mechanisms on the possible thiol···Hg(II) and amine···Hg(II) interactions can be investigated. The results show that the Cys@UiO-66 framework can adsorb 1288 mg g^-1 of Hg(II), while Mer@UiO-66 and Gly@UiO-66 can adsorb 593 and 313 mg g^-1 at pH = 7 and 500 ppm, respectively. This is due to the facts that both the amine and the thiol functions of the Cys@UiO-66 framework show synergism in Hg(II) removal, and the secondary mechanisms reduce the affinity of thiol in Mer@UiO-66 and amine in Gly@UiO-66 frameworks in the removal process of Hg(II) ions. Free -SH sites in Mer@UiO-66 undergo a redox convert to -SO₃H groups, and free protonated -NH₂ sites in Gly@UiO-66 do not fully deprotonate during Hg(II) removal. Yet, in the case of Cys@UiO-66, free protonated -NH₂ sites are fully deprotonated, and free SH sites did not convert to -SO₃H groups during Hg(II) removal. These observations show that the redox and proton transfer mechanisms can negatively affect the adsorption capacity of functional MOFs containing free -SH and -NH₂ groups. So, not only the functionalization but also control over secondary mechanisms in the removal process are necessary parameters to improve the affinity between functional MOFs and Hg(II) ions.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"17726-17740"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139911369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electromagnetic Interference Shielding of a Sequential Dual-Curing Thiol-Epoxy System Reinforced with GNPs with High Shape Memory.","authors":"Ignacio Collado, Antonio Vázquez-López, Simón Heredia, Jimena de la Vega, Alberto Jiménez-Suárez, David Maestre, Silvia G Prolongo","doi":"10.1021/acsami.5c02049","DOIUrl":"10.1021/acsami.5c02049","url":null,"abstract":"<p><p>Modern electronics face several challenges during operation, such as interference of disruptive electromagnetic signals and high temperatures within a limited space. Both electromagnetic interference (EMI) and thermal management could be tackled simultaneously by employing smart efficient materials with high thermal and electrical conductivity. A dual-curing epoxy system, a new subset of adaptable materials, could potentially solve those challenges, with the proper selection of the reinforcement. Moreover, its manufacturing and synthesis process, which involves a sequential curing stage, constitute an attractive, selective, and fast methodology. The thiol-epoxy chemistry allows the synthesis of an epoxy system with high shape-memory capabilities while retaining optimal mechanical properties. Herein, dual-curing epoxy systems reinforced with graphene nanoplatelets (GNPs) are manufactured. The influence of the GNPs content is evaluated, which greatly increases upon loading while retaining a high shape-memory fixation and recovery rates (near 99%). A maximum EMI shielding efficiency of 24 dB is achieved for the higher GNPs content, which is endowed by the high electrical conductivity of the system. Moreover, a modelization of the near-field and far-field EMI shielding is reported, which agrees with experimental observation. This report shows the potential and multifunctional nature of dual-curing epoxy composites for EMI shielding and shape-memory-related application.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18954-18970"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering a Ru(ii) Nanostructure for Oxygen-Free Photocatalytic Degradation of Environmental Pollutants.","authors":"Ziming Huo, Xiaochun Xie, Jiying Liu, Fangman Chen, Jianfang Cao, Wen Sun, Yingshuai Wang, Zidong Lu, Dan Shao","doi":"10.1021/acsami.5c01822","DOIUrl":"10.1021/acsami.5c01822","url":null,"abstract":"<p><p>The development of high-performing photocatalysts with visible-light-absorbing and oxidative properties for the degradation of organic contaminants in anaerobic microenvironments remains a challenge. Herein, a Ru-complex decorated with coumarin ([Ru(phen)₂Cur]Cl₂) molecules was created to achieve high absorption capacities and photocatalytic activity. Taking advantage of the nanoparticulate structure, the transformation of [Ru(phen)₂Cur]Cl₂ molecules into Ru(II) nanostructures (RuCur NPs) not only exhibited an extensive broad visible-light absorption spectrum but also possessed enhanced intersystem crossing efficiency and improved electron transfer. Consequently, these self-assembled nanocatalysts performed efficient photodegradation toward both antibiotics and organic dyes, especially in acidic and anaerobic environments. Mechanistically, photoactivated electrons and holes on the surface of nanostructures drive the degradation of organic molecules via direct redox reactions in an oxygen-independent manner. This result proposed a fundamental insight for developing oxygen-independent nanoparticulate photocatalysts.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18493-18501"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unleashing the Full Potential of Electrochromic Heterostructured Nickel-Cobalt Phosphate for Optically Active High-Performance Asymmetric Quasi-Solid-State Supercapacitor Devices.","authors":"Loujain G Ghanem, Manar M Taha, Basamat S Shaheen, Nageh K Allam","doi":"10.1021/acsami.3c11494","DOIUrl":"10.1021/acsami.3c11494","url":null,"abstract":"<p><p>The rational design of hybrid systems that combine capacitor and battery merits is crucial to enable the fabrication of high energy and power density devices. However, the development of such systems remains a significant barrier to overcome. Herein, we report the design of a Ni-Co phosphate (Ni_3-<i>x</i>Co_<i>x</i>(PO₄)₂·8H₂O) nanoplatelet-based system via a facile coprecipitation method at ambient conditions. The nanoplatelets exhibit multicomponent synergy, exceptional charge storage capabilities, rich redox active sites (ameliorating the redox reaction activity), and high ionic diffusion rate/electron transfer kinetics. The designed Ni_3-<i>x</i>Co_<i>x</i>(PO₄)₂·8H₂O offered a respectable gravimetric specific capacity and marvelous capability rate (966 and 595 C g^-1 at 1 and 15 A g^-1) over the Ni₃(PO₄)₂·8H₂O (327.3 C g^-1) and Co₃(PO₄)₂·8H₂O (68 C g^-1) counterparts. Additionally, the nanoplatelets showed enhanced photoactive storage performance with a 9.7% increase in the recorded photocurrent density. Upon integration of Ni_3-<i>x</i>Co_<i>x</i>(PO₄)₂·8H₂O as a positive pole and commercial activated carbon as a negative pole, the constructed hybrid supercapacitor device with PVA@KOH quasi-gel electrolyte exhibits great energy and power densities of 77.7 Wh kg^-1 and 15998.54 W kg^-1 with remarkable cycling stability of 6000 charging/discharging cycles and prominent Coulombic efficiency of 100%. Interestingly, two assembled devices are capable of glowing a red LED bulb for nearly 180 s. This research paves the way to design and fabricate electroactive species via a facile approach for boosting the design of a plethora of supercapattery devices.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"17657-17671"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41089747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Hole Mobility van der Waals Junction Field-Effect Transistors Based on Te/GaAs for Multimode Photodetection and Logic Applications.","authors":"Fei Li, Jiang Zeng, Yiming Zhao, Lingyu Zhu, Yao Zhou, Zuyi Wang, Zhen Wang, Yuhan Zhang, Guoxin Liu, Jingxian Xiong, Wei Gao, Mengmeng Yang, Jingbo Li, Nengjie Huo, Yiming Sun","doi":"10.1021/acsami.5c00891","DOIUrl":"10.1021/acsami.5c00891","url":null,"abstract":"<p><p>Recently, interface scattering and low mobility have significantly impeded the performance of two-dimensional (2D) P-type transistors. 2D semiconductor tellurium (Te) has garnered significant interest owing to its unique atomic chain crystal structure, which confers ultrahigh hole mobility. van der Waals heterojunction enhances transistor performance by reducing scattering at the gate-channel interface, attributed to its high-quality interface. In this study, we present Te/gallium arsenide (GaAs) hybrid dimensional JFETs exhibiting sizable on-state currents, elevated transconductance, and mobility as high as 328.4 cm²V^-1s^-1. Achieving a low-power device, we lowered the threshold voltage from 1.9 to 1 V by modifying the carrier concentration of the gate. Furthermore, enhancing negative photoconductivity on the Te surface is achieved by tuning the depth of the channel depletion region, thereby achieving an enhanced negative photoconductivity mechanism with universal applicability. Based on this, a photodetector featuring both positive and negative photoconductivity and a photovoltaic effect was developed. The negative photoresponsivity and detectivity at 635 nm of the device are -64 AW^-1 and 1.41 × 10¹⁰ Jones, respectively. Utilizing these properties, we develop Te/GaAs JFET-based logic gate circuits and single-point negative photoconductive imaging applications. This provides a potential research avenue for future logic circuits and optoelectronic devices.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18655-18665"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum-Dot Ceramic Composites for Oxidative Stress Mitigation under Broad-Spectrum Radiation Exposure.","authors":"Rajib Chandra Das, Marcela L Chaki Borrás, Jung Ho Kim, Martin Carolan, Ronald Sluyter, Michael Lerch, Konstantin Konstantinov","doi":"10.1021/acsami.4c22795","DOIUrl":"10.1021/acsami.4c22795","url":null,"abstract":"<p><p>Nanomaterials offer a promising approach to mitigating radiation-induced oxidative stress by scavenging reactive oxygen species (ROS). However, developing a nanomaterial that provides protection across a wide range of radiation conditions is challenging due to the photoelectric effects linked to the atomic number (<i>Z</i>) of the materials. Quantum dots (QDs) in a composite system, owing to their small size and when used at low concentrations, minimize photoelectric effects and secondary electron generation. In this study, cerium oxide (CeO₂) QDs were combined with low-<i>Z</i> yttrium oxide (Y₂O₃) to create a nanocomposite (NC) (henceforth CeO₂ QDs-Y₂O₃) that exploits the synergistic effects of both materials, providing protection across a broader spectrum of radiation. CeO₂ QDs-Y₂O₃ demonstrated superior ROS scavenging than individual CeO₂ and Y₂O₃ under nonradiative conditions, particularly for hydroxyl radicals (^•OH) and hydrogen peroxide (H₂O₂), two primary ROS generated under radiation. This improved performance, due to increased oxygen vacancies and a higher Ce³⁺/Ce⁴⁺ ratio, indicates that these properties could help protect cells from oxidative stress during radiation exposure. Radioprotection analysis using the linear-quadratic (LQ) model revealed that the NC provided effective protection at both 150 kVp and 10 MV radiation energies. At 150 kVp, the obtained protection enhancement ratio (PER) values at 10% cell survival for CeO₂ QDs-Y₂O₃, Y₂O₃, and CeO₂ were 1.07, 1.16, and 0.89, respectively, suggesting that the radioprotection afforded by Y₂O₃ in the NC outweighed the radiosensitization of the encrusted CeO₂ QDs. Additionally, despite the higher PER of Y₂O₃, the NC displayed increased biocompatibility toward the human keratinocyte HaCaT cell line in the absence of radiation compared to Y₂O₃. At 10 MV, where photoelectric effects are minimal, the NC outperformed both individual components, yielding a PER of 1.28, or a 28% dose enhancement compared to 12% for Y₂O₃ alone and 19% for CeO₂. This study highlights the potential of CeO₂ QDs-Y₂O₃ as a broad-spectrum radioprotective agent, offering enhanced biocompatibility and effective protection against radiation-induced oxidative stress across broad-ranging radiation conditions.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18096-18107"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143646335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reconfigurable Multifunctional Semifloating Gate Transistors Based on the ReSe₂/h-BN/Graphene van der Waals Heterostructure.","authors":"Wei Li, Tianhui Mu, Ze Sun, Shiyan Zhang, Yang Yu, Fan Bi, Jiaying Li, Yucheng Wang, Yupan Wu, Xuetao Gan, Shaoxi Wang","doi":"10.1021/acsami.4c22368","DOIUrl":"10.1021/acsami.4c22368","url":null,"abstract":"<p><p>In the post-Moore era, semifloating gate devices have great potential to be developed into next-generation devices for their excellent nonvolatile memory and reconfigurable logic. 2D materials have been focused due to their atomically flat surfaces, high carrier mobility, and excellent photoelectrical response. The 2D ReSe₂ is selected as a channel material for its ambipolar characteristic and outstanding optoelectronic response. Here, we fabricated ReSe₂/h-BN/Gr multifunctional semifloating gate (MFSFG) devices, which can work as bidirectional nonvolatile reconfigurable multistate P-N and N-P homojunctions, photodetectors, and artificial synaptic, reconfigurable logical, and half-wave rectification devices. The device exhibits large rectification ratios of ∼10⁶ (P-N) and ∼10⁴ (N-P) with great endurance (1000 cycles) and retention (1000 s). As a photodetector, it obtains the highest responsivity and detectivity of 1.98 A W^-1 and 6.39 × 10¹² Jones (N-P) and 0.93 A W^-1 and 2.00 × 10¹² Jones (P-N), respectively, under 532 nm illumination. The synaptic plasticity is perfectly achieved, and the convolutional neural network built based on synaptic data has the highest classification recognition accuracies of 96.54 and 88.99%. The logical ″XOR″, ″XNOR″, ″NAND″, ″OR″, and half-wave rectification functions are achieved on a single device under photoelectrical hybrid regulations. The integration of these various functions into a single ReSe₂/h-BN/Gr MFSFG device not only broadens the possibilities for utilizing 2D materials in multifunctional devices but also opens up new avenues for their application in neuromorphic computing and logic-in-memory chips.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18623-18635"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143646338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanisms of Strain-Dependent Interlayer Dynamic Friction in Graphene.","authors":"Jianzhang Huang, Yi Cai, Shuang Gan, Yingjing Liang, Qiang Han","doi":"10.1021/acsami.4c16697","DOIUrl":"10.1021/acsami.4c16697","url":null,"abstract":"<p><p>Two-dimensional materials have now become the main components of nanoelectromechanical systems due to their outstanding properties in practical application. This study investigates dynamic friction between rotational graphene layers under equi-biaxial tensile and shear strain via molecular dynamics simulations from the perspective of energy dissipation. To eliminate the influence of commensurability and the edge effect, a friction pair model with annular graphene as a slider is established. The mechanisms of strain effect coupling with temperature, rotational frequency, and supporting stiffness on the interlayer friction are analyzed. The results indicate that tensile strain reduces interlayer friction, while the shear strain effect on friction varies with temperature. The mechanism of frictional dissipation is explained from the perspectives of interface moiré pattern, entropic effect, interatomic interactions, effective contact atoms, in-plane deformation, out-of-plane lattice vibration, and phonon state density. The results of the research will provide a theoretical basis for the design and manipulation of nanoelectromechanical systems and two-dimensional materials.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"18981-18995"},"PeriodicalIF":8.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143646465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}