ACS Applied Electronic Materials最新文献_第8页

Magnetic La0.7Sr0.3MnO3 Membranes Synthesized by Etching a Sr3Al2O6 Sacrificial Layer Using an Intermediary Manganite Protection Layer

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-21 DOI: 10.1021/acsaelm.5c0005310.1021/acsaelm.5c00053

Moussa Mezhoud*, Saidur Rahman Bakaul, Oleg I. Lebedev, Vincent Polewczyk, Aïmane Cheikh, Wilfrid Prellier and Ulrike Lüders*,

{"title":"Magnetic La0.7Sr0.3MnO3 Membranes Synthesized by Etching a Sr3Al2O6 Sacrificial Layer Using an Intermediary Manganite Protection Layer","authors":"Moussa Mezhoud*, Saidur Rahman Bakaul, Oleg I. Lebedev, Vincent Polewczyk, Aïmane Cheikh, Wilfrid Prellier and Ulrike Lüders*, ","doi":"10.1021/acsaelm.5c0005310.1021/acsaelm.5c00053","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00053https://doi.org/10.1021/acsaelm.5c00053","url":null,"abstract":"The integration of perovskite oxides onto flexible substrates has witnessed significant advancements owing to the development of an epitaxial lift-off technique utilizing a Sr3Al2O6 sacrificial layer. However, Sr3Al2O6 is susceptible to instability in both air and high-temperature oxygen atmospheres, potentially leading to degradation during the growth of the functional oxide layer. In this study, we investigate the use of an oxygen-deficient La0.7Sr0.3MnO3 as capping layer, and demonstrate its ability to stabilize Sr3Al2O6 films in ambient air. We successfully synthesized freestanding La0.7Sr0.3MnO3 membranes by etching this sacrificial layer and transferring them onto flexible polymer substrates. Importantly, the magnetic properties of the La0.7Sr0.3MnO3 films are preserved in these membranes. Our results underline that employing a thin manganite capping layer ensures both high structural quality and the preservation of functional properties in the resulting membranes.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2119–2127 2119–2127"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanostructured ZIF-8 to Activate Bacteriostatic and Ultrasensitivity of Graphene-Based Piezoresistive Sensors for Intelligent Recognition

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0230410.1021/acsaelm.4c02304

Mengchen Ren, Weijia Huo, Tong Liu and Minghui Cao*,

{"title":"Nanostructured ZIF-8 to Activate Bacteriostatic and Ultrasensitivity of Graphene-Based Piezoresistive Sensors for Intelligent Recognition","authors":"Mengchen Ren, Weijia Huo, Tong Liu and Minghui Cao*, ","doi":"10.1021/acsaelm.4c0230410.1021/acsaelm.4c02304","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02304https://doi.org/10.1021/acsaelm.4c02304","url":null,"abstract":"Wearable pressure sensors with excellent performance have broad application potential in flexible electronics, motion detection, healthcare biomonitoring, etc. However, it remains a critical challenge to achieve high sensitivity, broad sensing range, excellent mechanical stability, fast response/recovery, and advanced characteristics simultaneously. Herein, a 3D flexible wearable piezoresistive sensor with high sensitivity, broad range, and rapid response is established via the utilization of reduced graphene oxide (rGO), zeolitic imidazolate framework-8 (ZIF-8), and polyurethane (PU) sponge. This rGO-ZIF-8@PU hybrid sensor exhibits ultrahigh sensitivity (243.24 kPa–1), wide detection range (0–200 kPa), fast response/recovery time (70 ms/80 ms), outstanding repeatability (over 5000 cycles), and satisfactory sensitivity retention (∼90%). In addition, this sensor also achieves an outstanding bacteriostatic property and brilliant breathability, providing ample convenience for the comfort and health of wearable devices. Besides, the strong ability to recognize multiple target objects endows our sensor with a more advanced mission, which could be of great help in assisting the lives of blind people. This outstanding 3D piezoresistive sensor shows broad application prospects in the next generation of electronic skin, healthcare, and artificial intelligence.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2048–2056 2048–2056"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Compressible and Efficient CNT/rGO/PDMS Thermoelectric Generator Based on a 3D Sponge-Structured Network for Harvesting Energy from a Shoe Sole

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0215510.1021/acsaelm.4c02155

Jian-Xun Chen, Kuo-Jen Ou, Yu-Cheng Wu, Jia-Wun Li, Jui-Hsin Wang, Chung-Feng Jeffrey Kuo, Chih-Chia Cheng, Yao-Hsuan Tseng and Chih-Wei Chiu*,

{"title":"Highly Compressible and Efficient CNT/rGO/PDMS Thermoelectric Generator Based on a 3D Sponge-Structured Network for Harvesting Energy from a Shoe Sole","authors":"Jian-Xun Chen, Kuo-Jen Ou, Yu-Cheng Wu, Jia-Wun Li, Jui-Hsin Wang, Chung-Feng Jeffrey Kuo, Chih-Chia Cheng, Yao-Hsuan Tseng and Chih-Wei Chiu*, ","doi":"10.1021/acsaelm.4c0215510.1021/acsaelm.4c02155","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02155https://doi.org/10.1021/acsaelm.4c02155","url":null,"abstract":"A compressible and highly elastic sponge thermoelectric generator (S-TEG) that exhibits excellent mechanical properties under an applied compressive force was fabricated. Carbon nanotubes were surface-modified via oxidation (m-CNTs) and combined with reduced graphene oxide (rGO) to form an m-CNT@rGO composite. A thermoelectric composite with a cylindrical sponge structure was fabricated by adding m-CNT@rGO to polydimethylsiloxane (PDMS) and sodium chloride, followed by chemical doping with FeCl3 (p-type) and poly(ether imide) (n-type) solutions to improve the thermoelectric effect. A stand-alone continuous thermoelectric module design was realized by connecting the cylinders in series; the electrodes were connected by attaching copper sheets to the top and bottom of the S-TEGs. The system generated a voltage of 24 mV at a temperature difference of 20 K. The sponge cylinder with a 20 mm diameter, 15 mm height, and 1.5 cm distance between two cylinders resulted in the best thermoelectric effect, producing a voltage of 300 mV and maintaining its original elasticity under 50% strain. The developed S-TEG with a three-dimensional sponge structure was applied to insoles to convert the wearer’s body heat into electrical energy. The S-TEGs are expected to sustainably power various wearable electronic devices, realizing a truly self-powered system. This innovation is anticipated to not only improve the performance of wearable devices but also promote the development of smart insoles.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1871–1882 1871–1882"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02155","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Wearable Iontronic Pressure Sensors Based on an Array of Semiellipsoids with Micropillars for Health and Motion Monitoring

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0209010.1021/acsaelm.4c02090

Xuehua Zhang, Qingxin Lu, Li Zhou, Wei Zhang, Xuehua Zhang* and Fangren Hu*,

{"title":"Flexible Wearable Iontronic Pressure Sensors Based on an Array of Semiellipsoids with Micropillars for Health and Motion Monitoring","authors":"Xuehua Zhang, Qingxin Lu, Li Zhou, Wei Zhang, Xuehua Zhang* and Fangren Hu*, ","doi":"10.1021/acsaelm.4c0209010.1021/acsaelm.4c02090","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02090https://doi.org/10.1021/acsaelm.4c02090","url":null,"abstract":"Flexible wearable pressure sensors are essential in human–machine interaction and health monitoring. Capacitive pressure sensors often employ microstructures or porous materials to enhance the compressibility of the dielectric layer, improving sensitivity and response speed. Here, we report a flexible iontronic pressure sensor fabricated with a 3D-printed mold, incorporating an ionic gel film with an array of semiellipsoids with micropillars. An electric double layer (EDL) forms at the upper and lower interfaces of the microstructure. As the pressure increases, the microstructure is gradually compressed, leading to an increase in the capacitance. The device exhibits a sensitivity of up to 3.19 kPa–1 in the pressure range below 10 kPa, a detection limit as low as 0.98 Pa, a wide pressure response range of 300 kPa, and response and relaxation times of 13 ms, with exceptional mechanical stability, and flexibility of the pressure sensor is demonstrated to be suitable for detecting pulses and human movements, with significant potential in the fields of wearable devices and electronic skin.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1820–1828 1820–1828"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of Optoelectronic Synaptic Behavior in SnSe2/WSe2 Heterojunction Transistors

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0219510.1021/acsaelm.4c02195

Zixuan Huang, Lisheng Wang*, Yifan Zhang, Zhenpeng Cheng and Fengxiang Chen*,

{"title":"Simulation of Optoelectronic Synaptic Behavior in SnSe2/WSe2 Heterojunction Transistors","authors":"Zixuan Huang, Lisheng Wang*, Yifan Zhang, Zhenpeng Cheng and Fengxiang Chen*, ","doi":"10.1021/acsaelm.4c0219510.1021/acsaelm.4c02195","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02195https://doi.org/10.1021/acsaelm.4c02195","url":null,"abstract":"The extensive research on neuromorphic devices exemplified by transistors is attributed to their capacity to emulate the synaptic plasticity found in the human brain. The unique properties of two-dimensional (2D) materials, such as layered structure, excellent optoelectronic properties, and ability to form heterojunctions, make them promising candidates for synaptic devices. Herein, a transistor based on a SnSe2/WSe2 heterojunction structure is investigated, and it can be used to simulate the function of optoelectronic synapses. The heterojunction exhibits bidirectional responses to optical stimuli with different wavelengths (λ = 400 nm/500 nm), enabling the device to emulate both excitatory and inhibitory synaptic behaviors in an all-optical pathway. Besides optical stimulus, gate voltage is used to modulate the synaptic performance of the device under 500 nm illumination, enabling it to mimic light adaption of biological eyes successfully. Based on the wavelength-selective synaptic plasticity, an optically driven artificial neural network (ANN) is proposed to classify handwritten digits with an accuracy of around 80%. This work will be an important step toward the future development of multifunctional optoelectronic synapses.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1906–1913 1906–1913"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0191910.1021/acsaelm.4c01919

Hanyeol Ahn, Hyun Su Park, Minseon Gu, Young Hun Khim, Hyun Don Kim, Jaehui Im, Sangwoo Nam, Eunjip Choi, Young Jun Chang and Moonsup Han*,

{"title":"Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory","authors":"Hanyeol Ahn, Hyun Su Park, Minseon Gu, Young Hun Khim, Hyun Don Kim, Jaehui Im, Sangwoo Nam, Eunjip Choi, Young Jun Chang and Moonsup Han*, ","doi":"10.1021/acsaelm.4c0191910.1021/acsaelm.4c01919","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01919https://doi.org/10.1021/acsaelm.4c01919","url":null,"abstract":"Advanced materials technologies have been extensively studied to overcome the limitations of conventional charge trap flash (CTF) memory driven by the increasing demand for data storage. This study investigates the impact of titanium (Ti) doping in silicon nitride (SiNx) on memory performance and explores systematically the CTF memory mechanisms. Our findings reveal a remarkable enhancement in memory performance, with Ti doping expanding the memory window width by over 60% and improving charge retention characteristics by more than 20%. Using techniques such as photoluminescence, Raman spectroscopy, X-ray photoelectron spectroscopy, and reflection electron energy loss spectroscopy, we elucidate the mechanisms behind the enhanced charge trap characteristics and the role of Ti within SiNx, including the suppression of oxygen-related shallow traps. Notably, Ti-doping is compatible with CMOS fabrication processes, facilitating seamless integration into existing manufacturing protocols. The devices were deposited at room temperature, considerably lower than the formation temperature of conventional flash memory, potentially offering innovative low-temperature processing options in flash memory fabrication.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1756–1763 1756–1763"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Triboelectric Nanogenerator Fabricated from High-Charge-Density, Wear-Resistant MoS2 Nanosheet-PDMS Composite for Energy Harvesting and Motion Detection

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0226610.1021/acsaelm.4c02266

Kun Zhao*, Jiahao Zhou, Zongqiang Gao, Jiabei Zhang, Yuan Ye, Junhui Wu, Yong Ding and Bin Zhang*,

{"title":"Triboelectric Nanogenerator Fabricated from High-Charge-Density, Wear-Resistant MoS2 Nanosheet-PDMS Composite for Energy Harvesting and Motion Detection","authors":"Kun Zhao*, Jiahao Zhou, Zongqiang Gao, Jiabei Zhang, Yuan Ye, Junhui Wu, Yong Ding and Bin Zhang*, ","doi":"10.1021/acsaelm.4c0226610.1021/acsaelm.4c02266","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02266https://doi.org/10.1021/acsaelm.4c02266","url":null,"abstract":"Triboelectric nanogenerators (TENGs) hold significant potential for a wide range of applications such as harvesting small mechanical energy and enabling self-powered sensing technologies. However, their broader implementation is hindered by limited output performance and a short operational lifespan. This work tackles these challenges by developing a composite film with high charge density and enhanced wear resistance, consisting of molybdenum disulfide (MoS2) nanosheets and polydimethylsiloxane (PDMS). The 3 wt % MoS2/PDMS composite film exhibited an 8.8% reduction in friction coefficient compared to pure PDMS. In tribological testing, the composite film showed a significant increase in the number of linear cycles by 146.6% compared to pure PDMS. Under a contact pressure of 8.2 N and an operating frequency of 1.96 Hz, the two-electrode contact-separation mode TENG demonstrated remarkable peak performance metrics: an open-circuit voltage (Voc) of 410 V, a short-circuit current (Isc) of 42 μA, and a short-circuit transferred charge (Qsc) of 76 nC, representing improvements of 2.05, 2.1, and 2.17 times, respectively, compared to a pure PDMS-based TENG. When integrated with a transformer–rectification circuit, the TENG achieved a peak power output of 2.8 mW, sufficient to continuously power capacitors and light up 66 white LEDs. Notably, the TENG maintained stable output performance even after enduring 10,000 operational cycles. An arched TENG design was also created to detect the motion state of the human body. This research offers critical insights and advancements in the design of innovative triboelectric materials for TENG applications, paving the way for enhanced output performance and durability in self-powered systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1985–2000 1985–2000"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In Situ Rheoimpedance and Thermogravimetry–Differential Thermal Analysis of Copper-Based Conductive Inks for High-Oxidation-Resistant Performance

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.4c0189410.1021/acsaelm.4c01894

Reina Ishikawa, Yuki Kawata* and Hideya Kawasaki*,

{"title":"In Situ Rheoimpedance and Thermogravimetry–Differential Thermal Analysis of Copper-Based Conductive Inks for High-Oxidation-Resistant Performance","authors":"Reina Ishikawa, Yuki Kawata* and Hideya Kawasaki*, ","doi":"10.1021/acsaelm.4c0189410.1021/acsaelm.4c01894","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01894https://doi.org/10.1021/acsaelm.4c01894","url":null,"abstract":"Thermal sintering is essential for forming continuous conductive pathways or electrodes after the deposition of metal-based conductive inks, particularly those containing metallic particles. The sintering process comprises several vital stages: solvent evaporation, degradation of organic stabilizers, particle sintering, and formation of conductive networks. However, accurately correlating these stages remains a significant challenge due to the complex and interrelated dynamics involved. In this study, we introduce in situ rheoimpedance approach combined with thermogravimetry-differential thermal (TG-DTA) analysis to achieve real-time monitoring of the sintering behavior of copper–nickel (Cu–Ni) mixed inks under nitrogen (N2) and air atmospheres. This method enables the simultaneous tracking of the electrical conductance, mechanical properties, and thermal behavior throughout the sintering process, providing unprecedented insights into the development of conductive pathways. Our analysis revealed that the sintering process occurs in three distinct stages, with oxidation becoming increasingly prominent at elevated temperatures in the air. Notably, the incorporation of Ni significantly enhances the oxidation resistance of Cu films during air sintering, resulting in higher conductivity under oxidative conditions compared to Cu-only inks. Furthermore, we demonstrated that the formation of conductive pathways aligns with critical electrical transitions during the sintering process, a correlation captured in real-time by using our combined measurement technique. These findings highlight not only the enhanced performance of Ni-modified Cu inks but also the potential of our in situ rheoimpedance-TG-DTA method as a powerful tool for optimizing sintering conditions and advancing the development of high-performance electronic components.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1736–1744 1736–1744"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Anisotropic and Temperature-Independent Magnetic Susceptibility Peak in MoSe1.8Te0.2 van der Waals Layers

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.5c0001210.1021/acsaelm.5c00012

Shiu-Ming Huang*, Ankush Saxena, Fu-En Cheng, Pin-Cing Wang, Kuan-Ting Liu and Mitch Chou*,

引用次数: 0

Quasi-2D-Perovskite-Based Broadband Photodetector with a High Ion/Ioff Ratio through Interface Engineering

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-20 DOI: 10.1021/acsaelm.5c0008710.1021/acsaelm.5c00087

Yi Liu, Chaojie Wu, Xiaoning Guan, Pengfei Lu, Wei Chen, Feiyu Zhao*, Chenjie Gu* and Xiang Shen,

{"title":"Quasi-2D-Perovskite-Based Broadband Photodetector with a High Ion/Ioff Ratio through Interface Engineering","authors":"Yi Liu, Chaojie Wu, Xiaoning Guan, Pengfei Lu, Wei Chen, Feiyu Zhao*, Chenjie Gu* and Xiang Shen, ","doi":"10.1021/acsaelm.5c0008710.1021/acsaelm.5c00087","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00087https://doi.org/10.1021/acsaelm.5c00087","url":null,"abstract":"A photodetector that can perceive light across a wide spectral range is crucial for various technological applications in imaging, sensing, and communication. However, the conventional silicon-based photodetector faces the challenge of absorption deficiency in the visible and ultraviolet regions, while the perovskite-based photodetector exhibits a weak response to near-infrared wavelengths. In this work, a broadband photodiode based on a silicon/quasi-two-dimensional perovskite structure was presented, which leverages the strengths of both materials to compensate for their respective deficiencies. Moreover, the introduction of the organic small-molecule material, phthalocyanine-based compound aluminum phthalocyanine chloride (AlClPc), as an interface modification layer effectively resolves the problem of high dark current in vertical devices, significantly reducing devices power consumption and enhancing the Ion/Ioff ratio. The results show that the responsivity reaches up to 23.72 A/W, and the detectivity is 2.1 × 1010 cm Hz1/2 W1–. Furthermore, the introduction of the interface layer increases the diode’s switching ratio from 27.55 to 2.35 × 102, achieving an order-of-magnitude improvement. Overall, this study demonstrates that the interface layer can effectively reduce dark current with a minimal impact on photocurrent attenuation. Furthermore, the integration of organic and inorganic structures, along with a modification layer, can be an optimal approach to promote the performance of the photodetectors, achieving a broadband, high-responsivity, and high Ion/Ioff ratio.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2128–2136 2128–2136"},"PeriodicalIF":4.3,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0