ACS Applied Electronic Materials最新文献

{"title":"Enhanced Electrostrain at Low Driving Electric-Field with the Dual-Phase Coexistence Assisting","authors":"Xi Feng,&nbsp;Peng Peng,&nbsp;Tao Chen,&nbsp;Junji Chen,&nbsp;Qi Sun,&nbsp;Fangping Wang,&nbsp;Anjiang Lu*,&nbsp;Guifen Fan*,&nbsp;Fangfang Zeng* and Qibin Liu,&nbsp;","doi":"10.1021/acsaelm.5c01406","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01406","url":null,"abstract":"<p >Piezoelectric ceramics, which are a vital type of driving component in electronic actuators, commonly require a high driving electric field to obtain a large electric field-induced strain due to their high coercive field. However, the piezoelectric ceramics with high coercive fields are difficult to apply in practical products. Therefore, it is of significant importance to develop a type of piezoelectric ceramic with a large electric field-induced strain and low hysteresis under a low driving electric field. In this work, we successfully prepared the (1–<i>x</i>)Pb(Mg_1/3Nb_2/3)O₃-<i>x</i>PbTiO₃ ceramics with a low driving electric field. An ultrahigh piezoelectric strain coefficient <i>d</i>₃₃* of 1205 pm/V, a superior piezoelectric constant <i>d</i>₃₃ of 810 pC/N, and an outstanding planar electromechanical coupling coefficient <i>k</i>_p of 0.7 are achieved. These superior electrical properties are attributed to multiphase and local polar nanoregions’ coexistance, which have been verified by Rietveld refinement and TEM. These findings will provide a feasible path to develop high-performance piezoelectric materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7933–7939"},"PeriodicalIF":4.7,"publicationDate":"2025-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Dielectric Energy Storage in Hf0.5Zr0.5O2-Based Oxides by Structure-Evolution Amorphization","authors":"Qiaotong Luan,&nbsp;Hao Yang,&nbsp;Qing Zhang,&nbsp;Weijie Zheng,&nbsp;Xinyu Jiang,&nbsp;Jiufu Li,&nbsp;Xiaohui Liu,&nbsp;Zhaoru Sun* and Zheng Wen*,&nbsp;","doi":"10.1021/acsaelm.5c00902","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00902","url":null,"abstract":"<p >The scale-down demands of electronic power devices make high-energy-density dielectric thin-film capacitors highly desirable. Most recently, improved dielectric energy storage properties have been reported in high-<i>k</i> binary materials, particularly the HfO₂-based oxides, showing promising applications. Here, we show a record-high energy storage density of 185 J/cm³ in this community achieved in Ba²⁺-doped Hf_0.5Zr_0.5O₂ (BHZO) thin films by structure-evolution amorphization. Employing molecular dynamics simulations, we reveal the amorphization mechanism of the structure transformation between the fluorite Hf_0.5Zr_0.5O₂ and perovskite Ba(Hf_0.5Zr_0.5)O₃, in which the oxygen instability and diffusion spreading over the Hf/Zr metal sublattices result in the collapse of long-range orderings. Strong disorder is achieved in the Hf_0.5Zr_0.5O₂ matrix, giving rise to an ultrahigh breakdown strength of 13.3 MV/cm in amorphous structure with the Ba²⁺ concentration of 12 at%. In addition, the maintenance of metal frames also allows further modulation of the amorphous BHZO films by substrate clamping and improved dielectric permittivity is achieved when the lattice mismatch is large. As a result, a giant energy storage density is obtained owing to the dielectric properties that are far beyond the trade-off between breakdown strength and permittivity. Our findings give theoretical and experimental insights for creating high-quality amorphous dielectric oxides and shed light on the exploitation of dielectric energy storage for advanced electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7594–7604"},"PeriodicalIF":4.7,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-Temperature Operation of Ge1–xSnx/Ge1–x–ySixSny Resonant Tunneling Diodes Featured with H2 Introduction during Molecular Beam Epitaxy","authors":"Shota Torimoto*,&nbsp;Shuto Ishimoto,&nbsp;Yoshiki Kato,&nbsp;Mitsuo Sakashita,&nbsp;Masashi Kurosawa,&nbsp;Osamu Nakatsuka and Shigehisa Shibayama*,&nbsp;","doi":"10.1021/acsaelm.5c01049","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01049","url":null,"abstract":"<p >As oscillators used for terahertz communication, a resonant tunneling diode (RTD) composed of group-IV semiconductors is desirable. From the perspective of energy band engineering, we focus on the Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> double-barrier structure (DBS) with group-IV compound materials. Although we observed negative differential resistance (NDR) at 10 K of the Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> RTD, we needed to enhance its low operating temperature. This study explored the impact of introducing H₂ during the growth of Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> DBS on their crystallinity and homogeneity. Our findings revealed that introducing H₂ during the growth of the Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> layer with a high Si composition (approximately 50%) led to island growth, whereas the layer growth was more likely for Ge_1–<i>x</i>Sn_<i>x</i>. By introducing H₂ only during the growth of the Ge_1–<i>x</i>Sn_<i>x</i> layer, we achieved significantly improved crystallinity and homogeneity in the Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> DBS. Consequently, we successfully observed NDR in the Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> RTD over a wide temperature range of 10–300 K. Moreover, the improved crystallinity and homogeneity allowed for NDR to appear in both sweep directions of the bias voltage at 200 K. The peak current density and peak-to-valley current ratio were approximately 9.65 kA/cm² and 1.31, respectively, surpassing previous Ge_1–<i>x</i>Sn_<i>x</i>/Ge_{1–<i>x</i>–<i>y</i>}Si_<i>x</i>Sn_<i>y</i> RTDs. Theoretical simulation of the current–voltage characteristics using TCAD indicated that the observed NDR originated from the second quantum level in the Ge_1–<i>x</i>Sn_<i>x</i> well. Finally, we examined potential directions for further enhancement of reliability and output performances.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7688–7696"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Powered High-Performance Broadband Heterojunction Photodetector Based on Nitrogen- and Boron-Doped Graphene Oxide","authors":"Fatma Yildirim,&nbsp;Mehmet Yaman,&nbsp;Mehmet Yilmaz*,&nbsp;Adem Koçyiğit and Şakir Aydoğan*,&nbsp;","doi":"10.1021/acsaelm.5c01425","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01425","url":null,"abstract":"<p >In this work, B- and N-doped reduced graphene oxide was obtained from Doruk Grafen (Anbiokim, Doruk, Turkey) and a high-performance self-powered rGO(B:N)/n-Si heterojunction photodetector based on rGO(B:N) was successfully fabricated. The obtained materials have been corrected by using Raman and XPS spectroscopy measurements. From these, the characteristic D and G peaks for reduced graphene oxide were clearly observed in the Raman spectrum. Also, the doping elements B and N have been detected in the XPS measurements. The device fabricated on the basis of this material exhibited antisymmetric I–V characteristics in the dark and provided a rectification as high as 3.57 × 10⁵ A. Photoelectrical measurements of the rGO(B:N)/n-Si photodetector were performed in visible light and under different wavelengths of 365, 395, 590, and 850 nm. The device was found to give an increasing photocurrent with varying light intensity under visible light. It was also found to give high-performance photodetector characteristics at 365, 395, 590, and 850 nm. The rGO(B:N)/n-Si photodetector exhibited high performance, including an ultrahigh responsivity of 793.6 mA/W (at −1.5 V), a detectivity of 2.15 × 10¹² Jones (at 0.0 V), and a high ON/OFF ratio of over 10⁴ under yellow light illumination of 8 mW/cm² (at zero bias). For the time-dependent stability measurements of the device, it was observed that the device remained largely stable, even 295 days after its production.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7951–7962"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon-Nanotube/β-Ga2O3 Heterojunction PIN Diodes","authors":"Hunter D. Ellis,&nbsp;, ,&nbsp;Botong Li,&nbsp;, ,&nbsp;Haoyu Xie,&nbsp;, ,&nbsp;Jichao Fan,&nbsp;, ,&nbsp;Imteaz Rahaman,&nbsp;, ,&nbsp;Weilu Gao,&nbsp;, and ,&nbsp;Kai Fu*,&nbsp;","doi":"10.1021/acsaelm.5c00631","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00631","url":null,"abstract":"<p >β-Ga₂O₃ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the lack of viable p-type doping have hindered its full potential, particularly in the development of ambipolar devices. This work introduces a heterojunction diode (HD) that combines p-type carbon nanotubes (CNTs) with i- and n-type β-Ga₂O₃ to overcome these limitations. For the first time, a CNT/β-Ga₂O₃ hetero-p-n-junction diode is fabricated. Compared to a traditional Schottky barrier diode (SBD) with the same β-Ga₂O₃ epilayer, the CNT/β-Ga₂O₃ HD demonstrates significant improvements, including a higher rectifying ratio (1.2 × 10¹¹ ), a larger turn-on voltage (1.96 V), a drastically reduced leakage current at temperatures up to 300 °C, and a 26.7% increase in breakdown voltage. Notably, the CNT/β-Ga₂O₃ HD exhibits a low ideality factor of 1.02, signifying an ideal interface between the materials. These results underline the potential of CNT/β-Ga₂O₃ heterojunctions for electronic applications, offering a promising solution to the current limitations in β-Ga₂O₃-based devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8357–8363"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Implementation of a Millimeter-Wave Wireless Transceiver Based on a Waveguide-Fed Space-Time-Coding Metasurface","authors":"Shuang Peng,&nbsp;Qian Yu,&nbsp;Xiaoyue Shen,&nbsp;Yating Xie,&nbsp;Han Zhang,&nbsp;Jie Ma,&nbsp;Xiaojian Fu,&nbsp;Junwei Wu and Fei Yang*,&nbsp;","doi":"10.1021/acsaelm.5c01154","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01154","url":null,"abstract":"<p >Future multimode wireless communication systems require compact, cost-effective, and flexible solutions supporting large-scale antenna arrays. Space-time-coding metasurfaces (STCMs) have emerged as a promising interface between digital signal processing and electromagnetic wave manipulation, enabling dynamic modulation of carrier waves in the time domain. Here, we present a versatile and efficient waveguide-fed space-time-coding metasurface (WF-STCM) transceiver architecture with harmonic beam-scanning and sideband suppression capabilities. The amplitude and phase of the radiated harmonics are precisely controlled by using time-varying bias signals applied to integrated PIN diodes. As a proof of concept, a WF-STCM-based wireless communication system is demonstrated by using Quadrature Phase Shift Keying (QPSK) and 16-Quadrature Amplitude Modulation (16-QAM) schemes. The WF-STCM array performs both signal modulation and reception, incorporating hybrid analog/digital signal processing. Experimental results confirm robust data transmission across the 25–29 GHz band with modulation rates reaching up to 5 MHz. Compared to conventional horn antenna-based receivers, the WF-STCM receiver demonstrates a superior signal processing capability under low signal-to-noise ratio conditions. These findings establish the feasibility of a fully metasurface-integrated wireless transceiver and provide a foundation for future scalable multinode communication networks based on metasurface-enabled architectures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7802–7810"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring 2D Material-Based Biosensors for Real-Time Detection of Target Analytes","authors":"Ghulam Dastgeer*,&nbsp;Sobia Nisar,&nbsp;Aamir Rasheed,&nbsp;Muhammad Imran and Iqra Rabani,&nbsp;","doi":"10.1021/acsaelm.5c01020","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01020","url":null,"abstract":"<p >Biosensors have transformed the field of analytical and diagnostic techniques, offering innovative solutions to the limitations of conventional detection techniques. In this comprehensive review, we explore the challenges faced by traditional detection methods, highlighting the significance and objectives of biosensors by addressing these limitations. We provide an overview of various types of biosensing devices, with a primary focus on electronic devices based on two-dimensional (2D) materials, particularly field-effect transistors (FETs), their diverse types, and sensing mechanisms. The review explores recent advances and emerging technologies in biosensing, emphasizing the pivotal role of FET-based sensors in enhancing sensitivity, specificity, and real-time monitoring. Additionally, we discuss the integration of biosensors into wearable devices, offering potential opportunities for continuous health monitoring. The challenges and future directions in biosensor research are critically examined, outlining strategies to address limitations, enhance stability, and reduce interference. Furthermore, we discuss the impact of biosensor commercialization on healthcare systems, emphasizing their growing influence on personalized healthcare. The review encloses a comprehensive comparison of various biosensing devices, their limit of detection (LOD), selectivity, and response time against the various target analytes, providing valuable insights for researchers, clinicians, and industry professionals. This study serves as a comprehensive resource for researchers, scientists, and professionals in the field of biosensors, offering a holistic perspective on emerging technologies and future directions for addressing the ever-evolving challenges in analytical chemistry and healthcare diagnostics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7447–7472"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Barrier-Modulated Neuromorphic Behavior in Mo/CdIn2S4/ZnO–Al Structures Based on Metastable Defects","authors":"Jakub Zdziebłowski*,&nbsp;Nicolas Barreau and Paweł Zabierowski,&nbsp;","doi":"10.1021/acsaelm.5c00800","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00800","url":null,"abstract":"<p >Neuromorphic computing is an increasingly accelerating research field that still faces several hardware challenges, thus driving materials science research. This contribution presents prototype neuromorphic devices based on cadmium–indium sulfide (CdIn₂S₄). We have found that the compound, previously studied in photocatalysis and photovoltaics, has yet-to-be-explored memristive properties. We manufactured a series of devices with varying stoichiometry and unveiled their switching and neuromorphic behavior. Our measurements indicate that barriers on the CdIn₂S₄ interfaces and native CdIn₂S₄ metastable defects control the behavior of the devices. Due to its compelling optoelectronic properties, CdIn₂S₄ creates vast opportunities to use it as an active layer for optically controlled neuromorphic devices. We propose a disparate switching mechanism based on metastable defects that could be utilized in neuromorphic device technology.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7572–7579"},"PeriodicalIF":4.7,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c00800","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of UV-Curable Nanoalumina Ceramic Ink and Its Application in Inkjet-Printed Multilayer Ceramic-Metal Substrates","authors":"Chunlai Li,&nbsp; and ,&nbsp;Liang Guo*,&nbsp;","doi":"10.1021/acsaelm.5c01180","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01180","url":null,"abstract":"<p >The conventional fabrication of multilayer ceramic-metal substrates, constrained by high-cost molding equipment and intricate manufacturing processes, faces limitations in high-frequency electronic applications. To address this challenge, this study proposes an innovative approach utilizing UV-curable nanoalumina ceramic ink integrated with inkjet printing technology. Through systematic screening of dispersants (oleic acid, stearic acid, BYK-111, and Xinnuo LD 1129), it was demonstrated that the polymeric dispersant Xinnuo LD 1129 significantly enhances colloidal stability via synergistic steric hindrance and electrostatic repulsion mechanisms. The optimized ink exhibited a viscosity of 14.5 mPa·s (at 60 s^–¹ shear rate), surface tension of 33.7 mN/m, and inverse Ohnesorge number <i>Z</i> = 2.0593, fulfilling the operational requirements of piezoelectric printheads. Remarkably, the ink maintained a sedimentation rate below 5% over a 7 week storage period, enabling continuous high-resolution patterning. This work establishes a critical material foundation for inkjet-printed multilayer ceramic-metal substrates and validates their potential in 5G communication systems and power electronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7838–7844"},"PeriodicalIF":4.7,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile Fabrication of Tough, Low-Temperature Flexible Conductive Hydrogels via Solvent Competition-Induced Crystallization","authors":"Dongchao Ji,&nbsp;Xiaoman Fei,&nbsp;Guangpeng Wang,&nbsp;Xiaolei Wang,&nbsp;Lei Yang,&nbsp;Zhuochao Wang,&nbsp;Zhibo Zhang*,&nbsp;Wenxin Cao*,&nbsp;Jiecai Han and Jiaqi Zhu*,&nbsp;","doi":"10.1021/acsaelm.5c01240","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01240","url":null,"abstract":"<p >Traditional hydrogels face significant limitations in practical applications due to their inherent weaknesses in mechanical strength, functional versatility, and environmental stability. Here, we develop a solvent competition-induced crystallization strategy for one-step fabrication of multifunctional poly(vinyl alcohol)-poly(acrylic acid) (PVA–PAA) hydrogels. By precisely controlling the phase separation process through the differential solubility of PVA in dimethyl sulfoxide–water binary solvents and PAA-mediated regulation, we construct a hydrogen-bond-cross-linked network with uniformly distributed crystalline domains. The resulting hydrogel exhibits exceptional mechanical properties comparable to natural rubber, including remarkable toughness (14 MJ/m³), high tensile strength (3.68 MPa), and extreme stretchability (&gt;950%). Beyond mechanical robustness, the material demonstrates multifunctional integration, featuring intrinsic ionic conductivity (0.27 S/m) with simultaneous antibacterial efficacy (≈80% inhibition against <i>S</i>. <i>aureus</i>), cryoprotective capability for stable operation at −70 °C, and long-term moisture retention (85% after 4 days). When employed as a flexible strain sensor, the hydrogel maintains stable sensitivity (gauge factor = 1.23) across 0–500% strain, even under extreme cryogenic conditions. This study not only advances a fundamental understanding of solvent-mediated crystallization dynamics but also establishes a versatile platform for developing robust, environmentally adaptive hydrogels through a facile fabrication process, thereby addressing critical challenges in wearable electronics and biosensing technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7872–7884"},"PeriodicalIF":4.7,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}