ACS Applied Electronic Materials最新文献_第8页

Electric Control of Quasiparticle Band Gap and Electron–Hole Excitation in the Bilayer of Janus Structure MoSeS

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-20 DOI: 10.1021/acsaelm.4c0184710.1021/acsaelm.4c01847

Bin Hu, Shun Wang, Tian-Xiang Qian, Ju Zhou, Yun Ding*, Tian-Yi Cai* and Sheng Ju*,

{"title":"Electric Control of Quasiparticle Band Gap and Electron–Hole Excitation in the Bilayer of Janus Structure MoSeS","authors":"Bin Hu, Shun Wang, Tian-Xiang Qian, Ju Zhou, Yun Ding*, Tian-Yi Cai* and Sheng Ju*, ","doi":"10.1021/acsaelm.4c0184710.1021/acsaelm.4c01847","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01847https://doi.org/10.1021/acsaelm.4c01847","url":null,"abstract":"The tunability of the band gap and optical properties of two-dimensional materials through electric fields has attracted significant attention for applications in electronics and optoelectronics. Recently, the transition metal dichalcogenide (TMD) MoSeS with Janus structure has been successfully synthesized with mirror symmetry broken and vertical dipole moment that distinguish it from conventional TMDs. When integrated into heterostructures, experimentally, it is revealed that Janus MoSeS can enhance interlayer coupling due to charge redistribution driven by the built-in electric field. In this paper, based on the many-body perturbation method, we investigate the quasiparticle electronic structure, electron–hole excitations, optical properties, and their evolution in the bilayer of Janus structure MoSeS with the external electric field. Due to the intrinsic dipole moment, the system has a type II band alignment, with the lowest-energy electron–hole excitations being of interlayer character. The quasiparticle band gap shows a persistent increase when the applied electric field is switched from the parallel to antiparallel direction of the intrinsic dipole moment. Consequently, the interlayer exciton exhibits a notable energy shift covering the infrared and red light spectrum, with the lifetime being tuned by up to four times on the microsecond scale. These findings suggest the potential application for Janus structure MoSeS in optoelectronics.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1059–1067 1059–1067"},"PeriodicalIF":4.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Janus Meta-Fabric via an Interlock Stitch Knitted Structure for Marginal Physiological Signal Monitoring

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-19 DOI: 10.1021/acsaelm.4c0196910.1021/acsaelm.4c01969

Bowen Yin, Lihong Wang, Jiaxu Liu, Shouwu Gao, Yuqing Zhang, Le Hong, Fuxing Chen* and Mingwei Tian*,

{"title":"Integrated Janus Meta-Fabric via an Interlock Stitch Knitted Structure for Marginal Physiological Signal Monitoring","authors":"Bowen Yin, Lihong Wang, Jiaxu Liu, Shouwu Gao, Yuqing Zhang, Le Hong, Fuxing Chen* and Mingwei Tian*, ","doi":"10.1021/acsaelm.4c0196910.1021/acsaelm.4c01969","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01969https://doi.org/10.1021/acsaelm.4c01969","url":null,"abstract":"Fabric-based wearable sensors for athletic performance monitoring have emerged as a focal point of research in recent times. For runners, tracking both respiration and stride is immensely advantageous, as these parameters jointly indicate an individual’s running performance. However, conventional wearable sensors incorporated into athletic apparel often compromise on flexibility, elasticity, and breathability, thereby affecting comfort and athletic performance. Additionally, they may be susceptible to external disturbances and can induce discomfort due to a strong foreign body sensation, coupled with restricted measurement capabilities. To address these challenges, we introduce a Janus fabric interlock stitch knitted triboelectric nanogenerator (ISK-TENG). The unique interlock stitch knitted design of the ISK-TENG ensures exceptional stretchability and breathability. Within the ISK-TENG, two triboelectric fabric layers are seamlessly integrated to form a Janus structure, which comes into contact under stretching or compression forces and returns to its original detached state upon the removal of external force. In lateral stretching mode, the ISK-TENG achieves an electrical output of 160 V and 130 nA; in vertical pressing mode, it delivers an output of 6 V and 15 nA. Furthermore, by integrating the ISK-TENG into clothing, we have developed an intelligent trouser featuring a one-body ISK-TENG system. This trouser is capable of monitoring human movement and respiration across various breathing patterns. Our work presents an innovative approach to concurrently monitor both large body movements and subtle respiratory signals, thereby enhancing the athletic performance of runners.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1120–1129 1120–1129"},"PeriodicalIF":4.3,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced UV Photodetector Efficiency with a ZnO/Ga2O3 Heterojunction

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-17 DOI: 10.1021/acsaelm.4c0206710.1021/acsaelm.4c02067

Shashi Pandey, Swaroop Ganguly, Alok Shukla* and Anurag Tripathi,

{"title":"Enhanced UV Photodetector Efficiency with a ZnO/Ga2O3 Heterojunction","authors":"Shashi Pandey, Swaroop Ganguly, Alok Shukla* and Anurag Tripathi, ","doi":"10.1021/acsaelm.4c0206710.1021/acsaelm.4c02067","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02067https://doi.org/10.1021/acsaelm.4c02067","url":null,"abstract":"Heterostructures comprising uncoated ZnO and coated with thin layers of Ga2O3 were produced by using spin-coating and subsequent hydrothermal processing. X-ray diffraction examination verifies the structural integrity of the synthesized heterostructures (HTs). Optical and photoluminescence spectra were recorded to assess the variation in absorption and emission of the Ga2O3-coated HTs in comparison to those of the pristine ZnO. We conducted comparative density-functional theory (DFT) computations to corroborate the measured bandgaps of both categories of HTs. To assess the stability of our devices, the transient response to on/off light switching under zero bias has been studied. A rise time τr1 (τr2) of 2300 (500) ms and a decay time τd1 (τd2) of 2700 (5000) ms have been observed for bare ZnO and ZnO/Ga2O3 HTs, respectively. A significant change was also observed in the electrical transport properties from bare ZnO to ZnO/Ga2O3. To see the performance of the device, responsivity (R) and detectivity (D = 1/NEPB) have been measured. It is evident from observation that responsivity of a device shows a maximum value in the UV region, while it is reduced in the visible region for HTs. In the case of detectivity, the maximum value reached was 145 × 1014 Hz1/2/W (at ∼200 nm) and 38 × 1014 Hz1/2/W (at 300 nm) for Ga2O3-coated ZnO and bare ZnO HTs, respectively. The maximum responsivity measured for the bare ZnO HTs is 7 (A/W), while that of Ga2O3-coated ZnO HTs is 38 (A/W). This suggests a simple way of designing materials for fabricating broad-range cost-effective photodetectors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1173–1181 1173–1181"},"PeriodicalIF":4.3,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stabilizing Tin–Lead Mixed Perovskite Solar Cells: A Spotlight on Antioxidation Strategies

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-17 DOI: 10.1021/acsaelm.4c0194410.1021/acsaelm.4c01944

Jiangyu Hang, Dongxu He, Peng Chen*, Bin Luo and Lianzhou Wang*,

引用次数: 0

Promoting Interlayer Exciton in Janus/Transition Metal Dichalcogenide Heterostructures by Annealing

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-17 DOI: 10.1021/acsaelm.4c0164510.1021/acsaelm.4c01645

Jan Kopaczek*, Mohammed Y. Sayyad, Renee Sailus, Cheng-Lun Wu, Seyed Tohid Rajaei Moosavy, Hayley Ruddick, Robert Kudrawiec and Seth Ariel Tongay*,

{"title":"Promoting Interlayer Exciton in Janus/Transition Metal Dichalcogenide Heterostructures by Annealing","authors":"Jan Kopaczek*, Mohammed Y. Sayyad, Renee Sailus, Cheng-Lun Wu, Seyed Tohid Rajaei Moosavy, Hayley Ruddick, Robert Kudrawiec and Seth Ariel Tongay*, ","doi":"10.1021/acsaelm.4c0164510.1021/acsaelm.4c01645","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01645https://doi.org/10.1021/acsaelm.4c01645","url":null,"abstract":"Recently discovered two-dimensional (2D) Janus monolayers are one of the members of 2D excitonic transition metal dichalcogenide (TMD) semiconductors. Unlike classical 2D TMDs, a two-faced atomic arrangement in the unit cell not only breaks the mirror symmetry but also induces a built-in polarization field. In return, interfacing 2D Janus with TMDs creates unique directions to manipulate interlayer excitons by engineering how the polarization direction or magnitude affects the neighboring 2D layers. Here, we report on interlayer excitonic properties of 2D heterobilayers involving Janus TMDs. The results first establish necessary ultrahigh vacuum annealing and cleaning steps in Janus/classical TMD bilayers with type-II band alignment to engineer the interlayer distance and interaction strength and to sustain interlayer excitons. Building on this, further studies change the polarization direction in four different bilayer configurations to engineer different polarization architectures. The results show that the polarization direction plays a significant role in determining the photoexcited carrier recombination and interlayer excitonic characteristics at the 2D interface. Overall, the study establishes the role of the polarization strength and direction in 2D bilayers involving 2D Janus TMDs and offers ways to engineer the interlayer exciton properties.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"997–1003 997–1003"},"PeriodicalIF":4.3,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI: 10.1021/acsaelm.4c0209210.1021/acsaelm.4c02092

Bingqing Wang, Sneha Banerjee and Peng Zhang*,

{"title":"Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers","authors":"Bingqing Wang, Sneha Banerjee and Peng Zhang*, ","doi":"10.1021/acsaelm.4c0209210.1021/acsaelm.4c02092","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02092https://doi.org/10.1021/acsaelm.4c02092","url":null,"abstract":"This study investigates the influence of tunneling contact resistances between carbon nanotubes (CNTs) on electron transport and electrical conductivity of macroscopic carbon nanofibers (CNFs), which profoundly impacts the performance of CNT thin film electronics, CNF electron emitters and cathodes, and energy conversion and storage devices. Utilizing a self-consistent electrical contact model coupling a transmission line model with tunneling current, we calculate the contact resistances of a plethora of CNT-CNT contacts within a CNF fiber, which consists of aligned, densely packed CNTs. A statistical analysis is conducted, using Gaussian distributions to account for variations in contact lengths, tunneling gap distances, and single CNT aspect ratios, to calculate the CNT-CNT contact resistance and the overall resistance of CNT fiber. By scaling our model to a macroscopic level, our results are in good agreement with experimental measurements. Our calculation suggests that while increasing the contact overlap length diminishes individual CNT-CNT contact resistance, it could paradoxically increase macroscopic CNT fiber resistance for a given constant CNF mass density, which is due to that fact that a larger overlap length allows more CNTs to pack along an electrical conduction path per unit length, leading to more tunneling contact junctions connected in series and thus less number of parallel conduction paths within the fiber cross section. Increasing tunneling gap distance increases both individual contact and overall fiber resistance. This research provides a simple design tool for tailoring CNT fiber electrical properties to promote real-world applications using CNTs or similar low-dimensional materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1192–1201 1192–1201"},"PeriodicalIF":4.3,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on Bidirectional Ultraviolet Light-Emitting Diodes Based on the Au/i-AlN/p-GaN MIS Heterojunction

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI: 10.1021/acsaelm.4c0201410.1021/acsaelm.4c02014

Enqin Zhao, Zhiang Yue, Xian Zhang, Shuaikang Wei, Guojiao Xiang, Jinming Zhang, Meibo Xin, Fujing Dong, Hui Wang* and Yang Zhao*,

{"title":"Study on Bidirectional Ultraviolet Light-Emitting Diodes Based on the Au/i-AlN/p-GaN MIS Heterojunction","authors":"Enqin Zhao, Zhiang Yue, Xian Zhang, Shuaikang Wei, Guojiao Xiang, Jinming Zhang, Meibo Xin, Fujing Dong, Hui Wang* and Yang Zhao*, ","doi":"10.1021/acsaelm.4c0201410.1021/acsaelm.4c02014","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02014https://doi.org/10.1021/acsaelm.4c02014","url":null,"abstract":"Aluminum nitride (AlN) thin films are widely used in optoelectronic devices. Ultraviolet (UV) and violet light-emitting diodes (LEDs) of the Au/i-AlN/p-GaN metal–insulator-semiconductor (MIS) structure were prepared by magnetron sputtering, which can achieve bidirectional luminescence. The result of I–V tests at variable temperatures indicated that the device exhibits highly stable rectification characteristics at different ambient temperatures. Under a driving current (0.02 mA), purple light was detected under forward bias and reverse bias. With the increase of driving current (1–2.5 mA), strong purple light was emitted under forward bias, and strong ultraviolet light emission was detected under reverse bias. In addition, considering the influence of temperature on the luminescence intensity, the electroluminescence (EL) test was carried out under the condition of variable temperature in both forward and reverse cases. Finally, the EL mechanism of the device was analyzed by Gaussian peak fitting of the spectrum and energy band structure. The research of bidirectional ultraviolet and violet LEDs based on the Au/i-AlN/p-GaN MIS structure provides an effective method for designing and developing a simple structure UV-LED.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 2","pages":"856–864 856–864"},"PeriodicalIF":4.3,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143088748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transparent and Stretchable Conductive Hydrogel Sensors: Optimizing Ion Selection to Enhance Mechanical and Sensing Performance

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI: 10.1021/acsaelm.4c0210110.1021/acsaelm.4c02101

Dian-Huan Ji, Yu-Feng Ni, Chien-Yin Lin and Mei-Yu Yeh*,

{"title":"Transparent and Stretchable Conductive Hydrogel Sensors: Optimizing Ion Selection to Enhance Mechanical and Sensing Performance","authors":"Dian-Huan Ji, Yu-Feng Ni, Chien-Yin Lin and Mei-Yu Yeh*, ","doi":"10.1021/acsaelm.4c0210110.1021/acsaelm.4c02101","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02101https://doi.org/10.1021/acsaelm.4c02101","url":null,"abstract":"Conductive hydrogels, with their unique combination of electrical conductivity and stretchability, are emerging as critical components for next-generation, flexible, and wearable sensors. In this work, we aimed to develop a low-cost, easy-to-manufacture hydrogel sensor using ionic compounds as the source of conductivity. Hydrogels were synthesized using acrylamide, poly(ethylene glycol), and carboxymethyl cellulose, with systematic variation of ionic compounds LiCl, NaCl, and KCl, labeled as Li-CH, Na-CH, and K-CH, respectively, to explore their effects on the nanostructure and mechanical properties of the hydrogels. Among the different formulations, Na-CH demonstrated superior performance with optimized elongation at break, tensile strength, and toughness, highlighting the importance of ion selection in hydrogel design. Na-CH also exhibited excellent stretchability, outstanding transparency, and high sensitivity in detecting a wide range of body movements, from large-scale gestures to subtle physiological signals such as pulse detection. With its exceptional combination of transparency, mechanical robustness, and repeatable sensing performance, Na-CH shows great potential for future applications in flexible electronics, healthcare monitoring systems, and smart display technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 2","pages":"874–883 874–883"},"PeriodicalIF":4.3,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143088217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All 3D-Printed Cu-PLA Composite Crossbar Memristor Array by Fused Filament Fabrication: Opportunities and Challenges

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI: 10.1021/acsaelm.4c0177410.1021/acsaelm.4c01774

Bhanu Prakash Bisht, Vijaykumar Toutam* and Sanjay R. Dhakate,

{"title":"All 3D-Printed Cu-PLA Composite Crossbar Memristor Array by Fused Filament Fabrication: Opportunities and Challenges","authors":"Bhanu Prakash Bisht, Vijaykumar Toutam* and Sanjay R. Dhakate, ","doi":"10.1021/acsaelm.4c0177410.1021/acsaelm.4c01774","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01774https://doi.org/10.1021/acsaelm.4c01774","url":null,"abstract":"This study demonstrates the fabrication of all 3D-printed crossbar memristor arrays using material extrusion-based fused filament fabrication. The fused deposition is done using a copper-polycaprolactone filament (Cu-PCL) for electrodes and copper-polylactic acid (Cu-PLA) for an active layer. The memristor demonstrated bipolar switching, with a set and reset voltages of ∼16 and −8 V, respectively, and an on/off ratio of ∼100. The double logarithmic I–V plots showed ohmic behavior of the low-resistance state and nonlinear behavior for the high-resistance state with two different slopes ∼2.2 and 4.3, attributed to space-charge-limited current and trap-charge-limited conduction. Retention tests confirm the stability of the device over long periods. Statistical analysis of many such devices confirmed the reproducibility. Studies using bronze-PLA, carbon fiber PLA, and carbon fiber-acrylonitrile butadiene styrene have not shown any memristive behavior. The long-term potentiation and depression behavior of the Cu-PLA memristor device demonstrated synaptic learning, with nonlinearity factors of 21.27 and 47.62, respectively. The filament formation and the mechanism of resistive switching are studied employing Black’s equation, where a critical current of 50 μA for electromigration of copper through PLA matrix and a mean-time failure of 1.7 s for filament formation is observed. The study finds the electromigration of copper ions through surface diffusion, filling the voids at the interface of the PLA polymer. Migration of these ions through the defect and voids in the polymer matrix toward the next neighbor sequentially connects all the intermediate copper particles, forming a conductive filament.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 2","pages":"696–705 696–705"},"PeriodicalIF":4.3,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143088834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In Situ Growth of Copper Channels within CuCl and PVDF Composite for Durable WORM Device Formation

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-01-15 DOI: 10.1021/acsaelm.4c0195210.1021/acsaelm.4c01952

Shilpi Bose, Aloka Sinha and Santanu Ghosh*,

{"title":"In Situ Growth of Copper Channels within CuCl and PVDF Composite for Durable WORM Device Formation","authors":"Shilpi Bose, Aloka Sinha and Santanu Ghosh*, ","doi":"10.1021/acsaelm.4c0195210.1021/acsaelm.4c01952","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01952https://doi.org/10.1021/acsaelm.4c01952","url":null,"abstract":"This study details the creation of a write-once-read many (WORM) memory device utilizing cuprous chloride (CuCl) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF–HFP) polymers. Employing an in-plane configuration, a deliberate 1:10 ratio of CuCl to PVDF–HFP has been selected. This ratio aims to establish an in situ copper channel within the device. The electrical response exhibits consistent memory retention over an extended duration. The WORM characteristics are attributed to the development of multiple conducting filaments or a highly conductive percolative path created by Cu ions within the polymer matrix. The UV–vis study also reinforces the obtained results. Additionally, the WORM undergoes specific poling and cooling conditions. The fabrication approach employed in this research yields a distinctive type of memory device. Once the device is activated, it maintains its state, even after the applied field is reduced. Their applications span legal, financial, healthcare, and archival purposes also, meeting stringent regulatory requirements and enhancing data integrity.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 2","pages":"847–855 847–855"},"PeriodicalIF":4.3,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143088576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0