ACS Applied Electronic Materials最新文献

{"title":"Polarity Reversal of Dipole at the SiO2/HZO Interface in Ferroelectric Field-Effect Transistors by Oxygen Scavenging of TiN","authors":"Manru Gong,&nbsp;Lixing Zhou,&nbsp;Xiaolei Wang,&nbsp;Junshuai Chai,&nbsp;Shuaijie Rong,&nbsp;Yunhao Chen,&nbsp;Chunsheng Guo,&nbsp;Shiwei Feng,&nbsp;Yamin Zhang","doi":"10.1021/acsaelm.6c01361","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01361","url":null,"abstract":"<p>Doped HfO₂-based ferroelectric field-effect transistors (FeFETs) have attracted considerable attention for their potential in nonvolatile memory applications. Research on the dipole at the SiO₂/HfO₂-based ferroelectric interface is scarce. This study finds that the polarity of dipole at SiO₂/Hf_0.5Zr_0.5O₂ (HZO) is reversed after TiN deposition on HZO. The mechanism of polarity reversal is investigated by X-ray photoelectron spectroscopy (XPS). The results show that TiN induces oxygen scavenging in HZO due to the Zr−O bond breaking and generates more oxygen vacancies near the HZO/TiN interface. More oxygen vacancies change the relative position of charge neutrality level (CNL) between SiO₂ and HZO, leading to the polarity reversal of dipole at the SiO₂/HZO interface. O₂ PDA is helpful to suppress the oxygen scavenging behavior after TiN deposition and modulate the dipole distribution. This work will be valuable to understand the distribution of dipole at the interlayer/FE interface and beneficial to improve the reliability of FeFET devices through band engineering employing dipole modulation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7982–7992"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low Temperature, Fast Copper–to–Copper Bonding Enabled by Microwave-Induced Interfacial Field Amplification","authors":"Min Kim,&nbsp;Taehun Jeon,&nbsp;Kyungmin Shin,&nbsp;Gyohyuk Gu,&nbsp;Byeonghun Lee,&nbsp;Hoesung Ha,&nbsp;Ohhyuk Kwon,&nbsp;Jongseon Seo,&nbsp;Jong Kyung Park,&nbsp;Hyunsang Hwang","doi":"10.1021/acsaelm.6c01533","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01533","url":null,"abstract":"<p>Copper–to–copper (Cu−Cu) bonding has emerged as a promising solution for realizing high-density vertical chip stacking for next-generation 3D integration. However, conventional Cu−Cu bonding generally requires a high thermal budget of ∼300 °C for 1 h, which can cause wafer warpage and compromise device performance. Here, a microwave annealing (MWA)-based Cu−Cu bonding technique is proposed to enable bonding with the substrate maintained at a low temperature of 150 °C and a short bonding time of 3 min. The MWA-bonded samples exhibit electrically and mechanically stable bonding characteristics, with a shear strength of 30–32 MPa and a specific contact resistance of ∼10⁻⁷ Ω·cm². The microwave field is amplified within the nanoscale air gap between the two facing copper surfaces, localizing energy via discharge at the Cu−Cu interface. This localized energy is believed to drive the rapid elimination of the interfacial gap between the Cu−Cu surfaces, allowing rapid bonding while keeping the substrate at a low temperature. Compared to thermocompression (TC) bonding under comparable pressure and an N₂ atmosphere, MWA reduces the bonding temperature by 150 °C while shortening the process time 20-fold. Overall, this study presents a low thermal budget Cu−Cu bonding approach enabled by an MWA strategy, offering a compelling alternative for advanced packaging.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8090–8098"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Epitaxial PZT Ferroelectric Membranes Fabricated via Water-Soluble CaO Sacrificial Layers on Sapphire Substrates","authors":"Ikki Nishida,&nbsp;Weikun Zhou,&nbsp;Takuto Soma,&nbsp;Hiromichi Ohta,&nbsp;Tsukasa Katayama","doi":"10.1021/acsaelm.6c00931","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00931","url":null,"abstract":"<p>Freestanding epitaxial ferroelectric membranes are essential for the advancement of flexible electronics and high-performance integrated devices. While water-soluble Sr₃Al₂O₆ sacrificial layers are commonly used to produce such membranes, the requirement for SrTiO₃ substrates limits their scalability and increases production costs. In this study, we report the synthesis of high-quality, epitaxial PbZr_0.52Ti_0.48O₃ (PZT) freestanding sheets using a cost-effective and scalable r-plane Al₂O₃ (sapphire) substrate with a water-soluble CaO sacrificial layer. By incorporating a thin BaTiO₃ buffer layer to prevent interfacial reactions, we successfully obtained crack-free, <em>c</em>-axis-oriented PZT membranes via a simple water-immersion process. The resulting PZT sheets exhibited a remarkably high remnant polarization of 58 μC/cm², which is larger than that reported in PZT membranes grown on Sr₃Al₂O₆/SrTiO₃ and closely approaches the values of bulk PZT. Furthermore, the sheets maintained a low dielectric loss. Our findings demonstrate that the CaO/sapphire platform provides a scalable and efficient pathway for fabricating high-performance epitaxial ferroelectric membranes, facilitating their integration into next-generation flexible and large-area electronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7746–7750"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation of Low-Resistance Ohmic Contacts on Lightly Doped 4H-SiC Epitaxy without Using Ion Implantation","authors":"Chenxiao Yu,&nbsp;Huolin Huang,&nbsp;Yung C. Liang","doi":"10.1021/acsaelm.6c01461","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01461","url":null,"abstract":"<p>The realization of silicon-carbide-based sensors usually requires lightly doped epitaxy as the functional region, which does not allow any induced defects from ion implantation. The constraint makes the formation of low-resistance ohmic contacts a challenge. This letter describes the approach of using a Ni/Ti/Ni trilayer metal stack and high-temperature annealing to form nickel-silicide compounds for a low specific contact resistivity of 6.18 mΩ·cm² on 4H-SiC epitaxy layer with a doping concentration of 2.19 × 10¹⁵/cm³. The scheme also produces titanium carbide and titanium silicon carbide, serving as the carbon diffusion barrier to secure good nickel-silicide compound formation. The influences of annealing temperature and titanium thickness on ohmic contact quality are discussed.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7687–7691"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction to “Decoding the Influence of Defect Dipoles on the Polarization Switching of Incommensurate Modulations of Perovskite Antiferroelectrics”","authors":"Anil Adukkadan,&nbsp;Jumana Puthanpurayil Jamaludheen,&nbsp;Rajeev Ranjan","doi":"10.1021/acsaelm.6c01916","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01916","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8175–8175"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlling Electrochemical Metallization in Low-Temperature Microwave-Grown MoS2 RRAM through Ultrathin MoO3 Interfacial Engineering","authors":"Jin-Bin Yang,&nbsp;Yu-Ting Huang,&nbsp;Zih-Syuan Huang,&nbsp;I-Chih Ni,&nbsp;Mei-Hsin Chen,&nbsp;Chih-I Wu","doi":"10.1021/acsaelm.6c00940","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00940","url":null,"abstract":"<p>Resistive random-access memory (RRAM) has attracted significant attention as a next-generation nonvolatile memory technology owing to its simple structure, fast switching speed, and compatibility with back-end-of-line (BEOL) integration. Among emerging switching media, two-dimensional molybdenum disulfide (MoS₂) offers unique advantages arising from its atomically thin structure and interface-dominated transport characteristics. However, the integration of MoS₂-based memory devices is often limited by the high synthesis temperatures required for conventional growth methods. Here, we demonstrate MoS₂-based RRAM devices employing directly grown MoS₂ films synthesized by microwave plasma-enhanced sulfurization at a process temperature below 400 °C without transfer processes. The switching behavior was found to strongly depend on the top electrode material. Inert Au electrodes exhibited vacancy-mediated resistive switching with stable retention but limited endurance, whereas active Ag and Cu electrodes showed electrochemical metallization (ECM)-type behavior associated with metal ion migration and conductive filament formation. To improve switching stability, an ultrathin 1 nm MoO₃ interlayer was introduced between Ag and MoS₂ to regulate Ag migration while preserving the ECM switching mechanism. The optimized Ag/MoO₃ (1 nm)/MoS₂/Au device exhibited stable SET/RESET voltages of approximately 0.6/–1.9 V, retention exceeding 10⁴ s, and endurance approaching 10³ cycles (∼950 cycles). Depth-resolved X-ray photoelectron spectroscopy further confirmed the reversible redistribution of Ag species during switching, supporting a filamentary ECM mechanism. This work demonstrates a practical low-temperature approach for improving the reliability of MoS₂-based RRAM devices through interfacial ion-transport control, providing a BEOL-compatible pathway toward scalable resistive memory integration.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7751–7759"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Near-White Alternating-Current Electroluminescent Devices Based on a Screen-Printable Transparent Dielectric Ink","authors":"Yifan Tang,&nbsp;Yongsheng Ma,&nbsp;Zhicheng Sun,&nbsp;Yuwei Hao,&nbsp;Rui Ma,&nbsp;Yong Ni,&nbsp;Shouzheng Jiao","doi":"10.1021/acsaelm.6c01334","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01334","url":null,"abstract":"<p>Flexible alternating-current electroluminescent (ACEL) devices are promising for patterned and mechanically compliant lighting, but integrating optical transparency, dielectric performance, and near-white emission within a simple printed structure remains challenging. Here, a screen-printable and UV-curable transparent dielectric ink based on polyurethane acrylate, 4-acryloylmorpholine, and propylene carbonate (PC) was developed for flexible ACEL devices containing a single phosphor-composite emissive layer. Among the investigated formulations, 30 wt % PC provided the best overall balance of printability, wettability, optical transmission, dielectric response, dielectric loss, and electroluminescent output, and this selection was further supported by quantitative multi-criteria analysis. The printed dielectric layer exhibited an ITO-PET-referenced transmittance above 90% over 400–700 nm and a relative permittivity of approximately 25 at 1 kHz. Dielectric-film specimens with an average thickness of 50.0 ± 1.6 μm showed a breakdown strength of 24.52 ± 0.40 MV m⁻¹. A single printed emissive layer containing ZnS:Cu and CaAlSiN₃:Eu²⁺ at a mass ratio of 3:1 exhibited near-white chromaticity. The optimized devices exhibited average CIE coordinates of (0.331 ± 0.002, 0.331 ± 0.002), a correlated color temperature of 5457 ± 71 K, a moderate color rendering index of 69 ± 1, and a luminance of 48.7 ± 1.0 cd m⁻² at 120 V and 500 Hz. Integrating-sphere measurements further yielded a luminous efficacy of 10.4 ± 0.3 lm W⁻¹ under the same driving conditions. After 1000 bending cycles at a radius of 5 mm, the devices retained approximately 77% of their initial luminance, showing that electroluminescent functionality was maintained under repeated bending.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7958–7971"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Smartphone-Integrated Biopolymer-Based Immunosensing Platform for Osteosarcoma Biomarker Analysis","authors":"Rashmita Priyadarshini Swain,&nbsp;Riddhi Dubey,&nbsp;Ankur Singh,&nbsp;Anchal,&nbsp;Pranjal Chandra","doi":"10.1021/acsaelm.6c01498","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01498","url":null,"abstract":"<p>Osteopontin (OPN) is an important biomarker related to osteosarcoma, potentially the most aggressive bone cancer, that plays a vital role in tumor initiation, progression, and metastasis. Here, we present a label-free, stable, and highly specific electrochemical immunosensor for sensitive detection of OPN. The sensing interface was engineered using a Manganese hexacyanoferrate- chitosan (MnHCF-CS) composite subsequently layered on an rGO modified electrode to form a biocompatible, self-reporting redox-active interface, followed by immobilization of anti-OPN antibodies via the bioconjugation chemistry. All electrochemical measurements, namely linear sweep voltammetry, and electrochemical impedance spectroscopy, were performed in PBS, the only solvent required to generate analytical signals. The immunosensor exhibited a stable, reproducible redox response, sufficient anti-interference properties, and high selectivity for the detection of OPN. The combined effects of gold nanoparticles, rGO, and the MnHCF-CS composite resulted in a greater electroactive surface area, improved conductivity, and enhanced antibody stabilization. To assess the concentration of OPN, a smartphone-integrated application, ‘‘OsteoPredictor,’’ was developed as an easy-to-use platform. This buffer-based immunosensor showed potential for early osteosarcoma diagnosis and ultimately, point-of-care (POC) analysis. The developed sensor system demonstrates excellent analytical performance, achieving a low detection limit of 0.156 ng/mL (RSD &lt; 4.72%, <em>n</em> = 3) and a wide linear detection range of 10–1000 ng/mL. Its applicability was validated in human serum, confirming its application in a realistic environment.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"8077–8089"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fully Printed Li-Ion Batteries Enabled by Printable Amphiphilic Long-Chain Polyamide Separators","authors":"Xiang Liu,&nbsp;Wei Wang,&nbsp;Yanan Zhang,&nbsp;Tao Wen","doi":"10.1021/acsaelm.6c01209","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01209","url":null,"abstract":"<p>Printed lithium-ion batteries (LIBs) are highly attractive for the Internet of Things (IoT), but their development is severely limited by the lack of printing-compatible separators. Herein, we report a printable separator based on amphiphilic long-chain polyamide using a “mixed ‘non-solvents’ evaporation-induced phase separation” (MNEIPS) strategy. Long-chain polyamide dissolves uniquely in high-polarity/low-polarity mixtures, and rapid phase separation during solvent evaporation generates uniform porous structures with high electrolyte wettability and a wide electrochemical stability window. Sequential layer-by-layer printing enables monolithically integrated cathode–separator–anode stacks with tight interfacial contact. Such printable separators are compatible with various electrode materials, supporting both Li-ion and Na-ion full cells. We further demonstrate a stand-alone, fully printed battery with printed current collectors and UV-curable encapsulation, which can power commercial electronic devices. This work provides a facile and scalable room-temperature route to printable separators for structurally integrated batteries.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7853–7863"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mobile-Ion-Induced Transient NDR in MoS2 FETs: Optimization Insights and Figures of Merit via Compact Modeling","authors":"Shaokai Zhou,&nbsp;Yehao Wu,&nbsp;Jianming Huang,&nbsp;Yezhu Lv,&nbsp;Haihui Cai,&nbsp;Yury Yuryevich Illarionov","doi":"10.1021/acsaelm.6c01088","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01088","url":null,"abstract":"<p>Transient negative differential resistance (TNDR) induced by the drift of mobile ions in gate dielectrics is of potential interest for memory and neuromorphic applications. However, the underlying physical dynamics and optimization strategies remain to be fully elucidated. This work presents a comprehensive investigation based on a compact physical model of ion-induced counterclockwise (CCW) hysteresis and TNDR in MoS₂ field-effect transistors (FETs) with HfO₂ gate insulators. We first establish the relationship between the gate sweep frequency and the resulting gate transfer characteristics, correlating distinct CCW hysteresis and TNDR regimes with the spatial trajectories of mobile charges within the oxide bulk. Then we investigate the impact of the interfacial activation energy barrier and reveal the physical mechanism that maximizes the TNDR response, namely ions are initially slowed by the gate-side barrier but subsequently enter the high-mobility bulk region just before the sweep reversal, enabling sustained drift and lag during the reverse sweep. Based on this mechanistic understanding, we further explore modulation of TNDR by adjusting the gate voltage sweep range and the oxide thickness. Our results reveal that the optimal conditions for maximizing the TNDR window (<em>ΔV</em>_TNDR) and overshoot (<em>R</em>) diverge, indicating a critical trade-off between performance magnitude and operating speed. To resolve this trade-off, we introduce a combined figure of merit (CFOM) that incorporates both magnitude and frequency metrics and identify the optimal bias and geometry within the parameter space explored in this work. These findings offer semiquantitative design guidelines for harnessing ion-induced gate oxide instabilities in functional electronic devices and their possible use for memory applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 18","pages":"7790–7800"},"PeriodicalIF":4.7,"publicationDate":"2026-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}