ACS Applied Electronic Materials最新文献

{"title":"Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure","authors":"Yueh-Han Chuang,&nbsp;Fu-Gow Tarntair,&nbsp;Pei-Jung Wang,&nbsp;Tian-Li Wu,&nbsp;Niall Tumilty and Ray-Hua Horng*,&nbsp;","doi":"10.1021/acsaelm.4c0083510.1021/acsaelm.4c00835","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00835https://doi.org/10.1021/acsaelm.4c00835","url":null,"abstract":"<p >In this study, β-Ga₂O₃ films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga₂O₃ metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga₂O₃ films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, <i>R</i>_on.sp decreased from 392 mΩ.cm² to 238 mΩ.cm²,and μ_FE increased from 15 cm²/(V s) to 19.9 cm²/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low <i>R</i>_on and impressive <i>I</i>_D on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga₂O₃ MOSFETs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic Structure and Stability of Two-Dimensional Molybdenene","authors":"Sabrina Smid, Longlong Li, Maria Fyta","doi":"10.1021/acsaelm.4c01092","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01092","url":null,"abstract":"Two-dimensional (2D) molybdenene was very recently discovered as a novel 2D material, which is made up of a single layer of molybdenum atoms. Using quantum mechanical calculations, we unraveled the structural and electronic properties of 2D molybdenene. Out of the possible atomic arrangements, we find a stable and a metastable atomic configuration based on the phonon dispersion analysis. The stable molybdenene is a hexagonal phase with <i>P</i>4/<i>mmm</i> symmetry, while the metastable one is a cubic phase with <i>P</i>6/<i>mmm</i> symmetry. The electronic structure of molybdenene strongly points to metallic behavior, while two distinct bands cross its Fermi surface at its high-symmetry reciprocal projections, providing further insights into the rich and tunable electron dynamics and magnetic properties of 2D molybdenene. These essential characteristics of 2D molybdenene strongly support that this novel planar structure can complement the family of 2D materials, thus enhancing their variability and potential toward nanoelectronics applications and beyond. In view of these, we anticipate that the stable hexagonal molybdenene will be of higher importance, while the metastable material will be utilized as embedded in heterostructures, as has already proven possible in the case of other 2D metastable materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials","authors":"Laixiang Qin, He Tian, Peigen Zhang, Zhiyuan Liu, Yang Shen, Xiaoyu Wu, Tian-Ling Ren","doi":"10.1021/acsaelm.4c01319","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01319","url":null,"abstract":"The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore’s law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS₂. Compared with a DG GAAFET based on Si with the same footprint, the MoS₂ DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small <i>I</i>_on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS₂ DG GAAFET. A single-gated GAAFET based on monolayer MoS₂ (MoS₂ SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS₂ DG GAAFET, which are revealed by larger SS and a reduced <i>I</i>_on/<i>I</i>_off ratio. It is verified to be feasible to surge <i>I</i>_on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe₂ and MoS₂ has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO₂ interlayer, which contributes to the subthreshold voltage matching between a MoS₂ n-type transistor and a WSe₂ p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal–oxide–semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exchange Reactions during Atomic Layer Deposition of Ternary Group 13 Oxides and Nitrides","authors":"Iaan Cho,&nbsp; and ,&nbsp;Bonggeun Shong*,&nbsp;","doi":"10.1021/acsaelm.4c0134610.1021/acsaelm.4c01346","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01346https://doi.org/10.1021/acsaelm.4c01346","url":null,"abstract":"<p >Due to interest in thin films of oxides and nitrides of group 13 elements (Al, Ga, and In) and their multicomponent combinations, their atomic layer deposition (ALD) processes are being actively investigated. However, often in ALD of multicomponent thin films, the composition of the injected precursor species and atomic percentage in the deposited film show significant discrepancies. In this study, exchange reactions of the group 13 element atoms with other group 13 precursors are suggested as a factor affecting the composition of the ternary oxides and nitrides during ALD. Density functional theory calculations are performed to investigate the surface chemistry of the group 13 oxides and nitrides. After the initial adsorption of the first precursor on the substrate, sequential adsorption of the secondary injected precursor with a different metal element is contemplated. By estimating the kinetic and thermodynamic factors of the exchange reactions, the reactivity trend of the group 13 elements is found to follow the trend Al &gt; Ga ∼ In, allowing the more active Al to undergo exchange with Ga and In on each surface, thereby making the deposited films richer in Al. These findings can contribute to the advancement of thin film fabrication for next-generation semiconductor or display devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exchange Reactions during Atomic Layer Deposition of Ternary Group 13 Oxides and Nitrides","authors":"Iaan Cho, Bonggeun Shong","doi":"10.1021/acsaelm.4c01346","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01346","url":null,"abstract":"Due to interest in thin films of oxides and nitrides of group 13 elements (Al, Ga, and In) and their multicomponent combinations, their atomic layer deposition (ALD) processes are being actively investigated. However, often in ALD of multicomponent thin films, the composition of the injected precursor species and atomic percentage in the deposited film show significant discrepancies. In this study, exchange reactions of the group 13 element atoms with other group 13 precursors are suggested as a factor affecting the composition of the ternary oxides and nitrides during ALD. Density functional theory calculations are performed to investigate the surface chemistry of the group 13 oxides and nitrides. After the initial adsorption of the first precursor on the substrate, sequential adsorption of the secondary injected precursor with a different metal element is contemplated. By estimating the kinetic and thermodynamic factors of the exchange reactions, the reactivity trend of the group 13 elements is found to follow the trend Al &gt; Ga ∼ In, allowing the more active Al to undergo exchange with Ga and In on each surface, thereby making the deposited films richer in Al. These findings can contribute to the advancement of thin film fabrication for next-generation semiconductor or display devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials","authors":"Laixiang Qin*,&nbsp;He Tian*,&nbsp;Peigen Zhang,&nbsp;Zhiyuan Liu,&nbsp;Yang Shen,&nbsp;Xiaoyu Wu* and Tian-Ling Ren*,&nbsp;","doi":"10.1021/acsaelm.4c0131910.1021/acsaelm.4c01319","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01319https://doi.org/10.1021/acsaelm.4c01319","url":null,"abstract":"<p >The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore’s law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS₂. Compared with a DG GAAFET based on Si with the same footprint, the MoS₂ DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small <i>I</i>_on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS₂ DG GAAFET. A single-gated GAAFET based on monolayer MoS₂ (MoS₂ SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS₂ DG GAAFET, which are revealed by larger SS and a reduced <i>I</i>_on/<i>I</i>_off ratio. It is verified to be feasible to surge <i>I</i>_on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe₂ and MoS₂ has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO₂ interlayer, which contributes to the subthreshold voltage matching between a MoS₂ n-type transistor and a WSe₂ p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal–oxide–semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic Structure and Stability of Two-Dimensional Molybdenene","authors":"Sabrina Smid*,&nbsp;Longlong Li* and Maria Fyta*,&nbsp;","doi":"10.1021/acsaelm.4c0109210.1021/acsaelm.4c01092","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01092https://doi.org/10.1021/acsaelm.4c01092","url":null,"abstract":"<p >Two-dimensional (2D) molybdenene was very recently discovered as a novel 2D material, which is made up of a single layer of molybdenum atoms. Using quantum mechanical calculations, we unraveled the structural and electronic properties of 2D molybdenene. Out of the possible atomic arrangements, we find a stable and a metastable atomic configuration based on the phonon dispersion analysis. The stable molybdenene is a hexagonal phase with <i>P</i>4/<i>mmm</i> symmetry, while the metastable one is a cubic phase with <i>P</i>6/<i>mmm</i> symmetry. The electronic structure of molybdenene strongly points to metallic behavior, while two distinct bands cross its Fermi surface at its high-symmetry reciprocal projections, providing further insights into the rich and tunable electron dynamics and magnetic properties of 2D molybdenene. These essential characteristics of 2D molybdenene strongly support that this novel planar structure can complement the family of 2D materials, thus enhancing their variability and potential toward nanoelectronics applications and beyond. In view of these, we anticipate that the stable hexagonal molybdenene will be of higher importance, while the metastable material will be utilized as embedded in heterostructures, as has already proven possible in the case of other 2D metastable materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure","authors":"Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng","doi":"10.1021/acsaelm.4c00835","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00835","url":null,"abstract":"In this study, β-Ga₂O₃ films were grown on the c-plane sapphire substrate by metal–organic chemical vapor deposition. Gate-recessed heteroepitaxial β-Ga₂O₃ metal oxide semiconductor field effect transistors (MOSFETs) were fabricated to achieve enhanced mode operation. It was found that the conductivity of Ga₂O₃ films can be further improved by in situ doping and a partial gate recess. Output current increased from 4.21 to 5.76 mA/mm, <i>R</i>_on.sp decreased from 392 mΩ.cm² to 238 mΩ.cm²,and μ_FE increased from 15 cm²/(V s) to 19.9 cm²/(V s) for MOSFETs with partial gate recesses of 7 and 5 μm, respectively. Device threshold voltages are positive, possessing low <i>R</i>_on and impressive <i>I</i>_D on/off ratios. Breakdown voltage was increased using a gate field plate. In summary, device performance was improved using shorter gate recesses for enhanced mode β-Ga₂O₃ MOSFETs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers","authors":"Zhichao Weng*,&nbsp;Robert Wallis,&nbsp;Bryan Wingfield,&nbsp;Paul Evans,&nbsp;Piotr Baginski,&nbsp;Jaspreet Kainth,&nbsp;Andrey E. Nikolaenko,&nbsp;Lok Yi Lee,&nbsp;Joanna Baginska,&nbsp;William P. Gillin,&nbsp;Ivor Guiney,&nbsp;Colin J. Humphreys and Oliver Fenwick*,&nbsp;","doi":"10.1021/acsaelm.4c0120810.1021/acsaelm.4c01208","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01208https://doi.org/10.1021/acsaelm.4c01208","url":null,"abstract":"<p >The development of the memristor has generated significant interest due to its non-volatility, simple structure, and low power consumption. Memristors based on graphene offer atomic monolayer thickness, flexibility, and uniformity and have attracted attention as a promising alternative to contemporary field-effect transistor (FET) technology in applications such as logic and memory devices, achieving higher integration density and lower power consumption. The use of graphene as electrodes in memristors could also increase robustness against degradation mechanisms, including oxygen vacancy diffusion to the electrode and unwanted metal ion diffusion. However, to realize this technological transformation, it is necessary to establish a scalable, robust, and cost-effective device fabrication process. Here we report the direct growth of high-quality monolayer graphene on sapphire wafers in a mass-producible, contamination-free, and transfer-free manner, using a commercially available metal–organic chemical vapor deposition (MOCVD) system. By taking advantage of this approach, graphene-electrode based memristors are developed, and all the processes used in the device fabrication incorporating graphene electrodes can be performed at wafer scale. The graphene electrode-based memristor demonstrates promising characteristics in terms of endurance, retention, and ON/OFF ratio. This work presents a possible and viable route to achieving robust graphene-based memristors in a commercially and technologically sustainable manner, paving the way for the realization of more powerful and compact integrated graphene electronics in the future.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01208","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers","authors":"Zhichao Weng, Robert Wallis, Bryan Wingfield, Paul Evans, Piotr Baginski, Jaspreet Kainth, Andrey E. Nikolaenko, Lok Yi Lee, Joanna Baginska, William P. Gillin, Ivor Guiney, Colin J. Humphreys, Oliver Fenwick","doi":"10.1021/acsaelm.4c01208","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01208","url":null,"abstract":"The development of the memristor has generated significant interest due to its non-volatility, simple structure, and low power consumption. Memristors based on graphene offer atomic monolayer thickness, flexibility, and uniformity and have attracted attention as a promising alternative to contemporary field-effect transistor (FET) technology in applications such as logic and memory devices, achieving higher integration density and lower power consumption. The use of graphene as electrodes in memristors could also increase robustness against degradation mechanisms, including oxygen vacancy diffusion to the electrode and unwanted metal ion diffusion. However, to realize this technological transformation, it is necessary to establish a scalable, robust, and cost-effective device fabrication process. Here we report the direct growth of high-quality monolayer graphene on sapphire wafers in a mass-producible, contamination-free, and transfer-free manner, using a commercially available metal–organic chemical vapor deposition (MOCVD) system. By taking advantage of this approach, graphene-electrode based memristors are developed, and all the processes used in the device fabrication incorporating graphene electrodes can be performed at wafer scale. The graphene electrode-based memristor demonstrates promising characteristics in terms of endurance, retention, and ON/OFF ratio. This work presents a possible and viable route to achieving robust graphene-based memristors in a commercially and technologically sustainable manner, paving the way for the realization of more powerful and compact integrated graphene electronics in the future.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}