ACS Applied Electronic Materials最新文献_第7页

Reducing Trap Density and Enhancing Carrier Transport in Methylammonium-Free Ideal-Band-Gap Tin–Lead Perovskite Solar Cells Using Phenethylhydrazine Hydrochloride 苯乙基肼在无甲铵理想带隙锡铅钙钛矿太阳能电池中降低陷阱密度和增强载流子输运

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-05 DOI: 10.1021/acsaelm.6c01670

Safalmani Pradhan, Gaurav Kapil, Ajay Kumar Baranwal, Jiaqi Liu, Huān Bì, Shahrir Razey Sahamir, Takeshi Kitamura, Suraya Shaban, Liu Ze, Yasuhiro Fujiwara, Qing Shen, Shuzi Hayase

{"title":"Reducing Trap Density and Enhancing Carrier Transport in Methylammonium-Free Ideal-Band-Gap Tin–Lead Perovskite Solar Cells Using Phenethylhydrazine Hydrochloride","authors":"Safalmani Pradhan, Gaurav Kapil, Ajay Kumar Baranwal, Jiaqi Liu, Huān Bì, Shahrir Razey Sahamir, Takeshi Kitamura, Suraya Shaban, Liu Ze, Yasuhiro Fujiwara, Qing Shen, Shuzi Hayase","doi":"10.1021/acsaelm.6c01670","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01670","url":null,"abstract":"Tin–lead (Sn–Pb) perovskite solar cells (PSCs) with band gaps around 1.4 eV have attracted significant interest due to their great potential for obtaining high power conversion efficiencies (PCEs) as their band gaps are near the optimum band gap value predicted by the Shockley–Queisser (SQ) limit for single-junction solar cells. Methylammonium (MA)-free Sn–Pb PSCs are of particular interest due to their better intrinsic thermal stability relative to MA-based counterparts. However, the facile oxidation of Sn2+ to Sn4+ results in defect formation and nonradiative recombination, ultimately leading to poor photovoltaic performance. Herein, we report a hydrazine-based additive, phenethylhydrazine hydrochloride (PEHHCl), for enhancing the photovoltaic performance of MA-free Sn–Pb PSCs possessing a band gap of 1.41 eV. The hydrazine functionality of the PEHHCl effectively suppresses Sn2+ oxidation while simultaneously passivating grain boundary defects by coordinating with undercoordinated Sn and Pb sites, thus resulting in improved crystallinity, lower energetic disorder, optimized energy-level alignment, and reduced trap densities. Consequently, the PEHHCl-incorporated perovskite films demonstrated reduced trap-assisted nonradiative recombination, faster charge-carrier transport time, longer charge-carrier recombination times, longer charge-carrier diffusion lengths, and higher recombination resistance. As a result of these improvements, the PEHHCl-incorporated MA-free PSC demonstrated a champion PCE of 19.59% with a stabilized PCE of 19.55%, placing it among some of the high-performing MA-free Sn–Pb PSCs reported for the band gap range of around 1.4 eV.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9105–9117"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabry–Pérot Interference, g-Factor Anisotropy, and Gate-Tunable Quantum Dot in Chiral Tellurium Nanowires 手性碲纳米线中的fabry - p<s:1>干涉、g因子各向异性和栅极可调谐量子点

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-15 DOI: 10.1021/acsaelm.6c01296

Suresh Ghimire, Mohammad Hafijur Rahaman, Nathan Tanner Sawyers, Madan Mohan Bhandari, Gokul Acharya, Syed Zulfiqar Hussain Shah, Iris Nandhakumar, Pawan Kumar, Zainul Aabdin, Hugh O. H. Churchill, Dharmraj Kotekar-Patil

{"title":"Fabry–Pérot Interference, g-Factor Anisotropy, and Gate-Tunable Quantum Dot in Chiral Tellurium Nanowires","authors":"Suresh Ghimire, Mohammad Hafijur Rahaman, Nathan Tanner Sawyers, Madan Mohan Bhandari, Gokul Acharya, Syed Zulfiqar Hussain Shah, Iris Nandhakumar, Pawan Kumar, Zainul Aabdin, Hugh O. H. Churchill, Dharmraj Kotekar-Patil","doi":"10.1021/acsaelm.6c01296","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01296","url":null,"abstract":"Chiral materials with strong spin–orbit coupling offer a unique platform for exploring the interplay between topology, chirality, and quantum transport, yet the quantum coherent regime in elemental tellurium nanostructures remains largely unexplored. Here, we demonstrate phase-coherent quasi-ballistic transport, anisotropic Zeeman spectroscopy, and gate-tunable quantum-dot formation in hydrothermally grown t-tellurium nanowires. Single-nanowire field-effect transistors exhibit p-type transport with hole mobilities rising from ≈80 cm2 V–1 s–1 at 210 K to ≈190 cm2 V–1 s–1 at 1 K, consistent with a crossover from phonon-limited to Coulomb-scattering dominated regimes near 50 K. Notably, devices segregate into two distinct regimes based on their room-temperature two-terminal resistance: low-resistance devices (≤25.8 kΩ) exhibit Fabry–Pérot interference, whereas high-resistance devices (≥25.8 kΩ) display Coulomb-blockade behavior revealing a two-terminal resistance-driven transition between quasi-ballistic and strongly localized transport regimes. Zeeman spectroscopy in in-plane and out-of-plane magnetic fields yields highly anisotropic Landé g-factors (an in-plane g∥ = 1.18 and an out-of-plane g⊥ = 18.41) and directly resolves a spin–orbit energy gap ΔSO = 0.386 meV from an avoided crossing. These results establish chiral tellurium nanowires as a versatile platform for gate-defined spin qubits exploiting large, tunable g-factors and for hybrid tellurium–superconductor architectures targeting Majorana zero modes in an elemental van der Waals (vdW) system.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8986–8995"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heterointerface Engineering of Porous BiVO4/g-C3N4 Composite for Highly Sensitive Low-Temperature Acetone Detection 多孔BiVO4/g-C3N4复合材料高灵敏度低温丙酮检测的异质界面工程

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-12 DOI: 10.1021/acsaelm.6c01586

Zaiba Zafar, Jin-Peng Li, Muhammad Saqib Rabbani, Xinghui Hou, Humaira Seema, Xin-Zheng Yue

{"title":"Heterointerface Engineering of Porous BiVO4/g-C3N4 Composite for Highly Sensitive Low-Temperature Acetone Detection","authors":"Zaiba Zafar, Jin-Peng Li, Muhammad Saqib Rabbani, Xinghui Hou, Humaira Seema, Xin-Zheng Yue","doi":"10.1021/acsaelm.6c01586","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01586","url":null,"abstract":"The development of highly sensitive and selective acetone sensors is essential for non-invasive disease diagnosis and health monitoring through breath analysis. In this work, a porous BiVO4/g-C3N4 (BVO/g-CN) heterostructure was prepared by first forming porous monoclinic BVO through hydrothermal nucleation and self-assembly of primary crystallites and then anchoring these particles onto thermally polymerized, g-CN nanosheets. The interparticle voids within the BVO aggregates and intersheet galleries of g-CN generated at the BVO/g-CN interface collectively produced the mesoporous architecture. The acetone sensing performance of pristine BVO and BVO/g-CN composites with different g-CN loading amounts was systematically investigated. The optimized BVO/g-CN-2 composite exhibited a BET surface area of 36.6 m2 g–1, compared with 5.6 m2 g–1 for pristine BVO. At 75 °C, the sensor achieved a response (Ra/Rg) of 42.1 toward 50 ppm acetone, approximately 6.2-fold higher than that of pristine BVO, together with response/recovery times of 90/324 s. The enhancement is attributed to the combined effects of the porous framework, increased density of accessible adsorption sites, and heterointerface-mediated charge redistribution. These findings demonstrate that the BVO/g-CN heterostructure is a promising candidate for low-temperature, high-performance acetone sensing and offers an effective strategy for the rational design of semiconductor heterojunction-based gas sensors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9081–9092"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149251348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Reconfigurable and Multifunctional Sensing-Memory-Computing Unit Based on Photodiodes and Memristors for Self-Powered Artificial Vision Perception 基于光电二极管和忆阻器的自供电人工视觉可重构多功能感知记忆计算单元

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-09 DOI: 10.1021/acsaelm.6c01776

Shuolin Yang, Yuwei Qu, Boyan Lu, Yifan Wu, Linshan Sun, Pengpeng Sang, Jixuan Wu, Junliang Liu, Shuzhen Fan, Yongfu Li, Jiezhi Chen, Cheng Fei, Xuepeng Zhan

{"title":"A Reconfigurable and Multifunctional Sensing-Memory-Computing Unit Based on Photodiodes and Memristors for Self-Powered Artificial Vision Perception","authors":"Shuolin Yang, Yuwei Qu, Boyan Lu, Yifan Wu, Linshan Sun, Pengpeng Sang, Jixuan Wu, Junliang Liu, Shuzhen Fan, Yongfu Li, Jiezhi Chen, Cheng Fei, Xuepeng Zhan","doi":"10.1021/acsaelm.6c01776","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01776","url":null,"abstract":"To overcome the limitations of the conventional Von Neumann architecture in energy consumption and processing time, sensing-memory-computing integrated devices inspired by the human visual system demonstrate great potential. Here, a sensing-memory-computing unit based on the hybrid integration of a photodiode and a memristor is proposed, enables flexible hybrid integration of visible or near-infrared photodiodes with digital or analog memristors by a standard semiconductor fabrication process. The storage function is achieved by the large switching ratio of the digital memristor, while the computing function is achieved by the synaptic properties of the analog memristor. A novel self-powered operating scheme based on this device is proposed, in which the photovoltage generated by the photodiode directly drives the memristor, enabling self-powered readout and computation. In image denoising and encoding tasks, the denoising process achieves ultralow training power consumption and self-powered inference, while the encoding process achieves an image classification accuracy of up to 85%. This work promotes the integration of sensing-memory-computing and provides a solid foundation for efficient and biomimetic neuromorphic computing.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9137–9145"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Delta-Doping Effect on the Performance of β-Ga2O3 MOSFETs with Different Gate Dielectric Layers δ掺杂对不同栅介电层β-Ga2O3 mosfet性能的影响

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-13 DOI: 10.1021/acsaelm.6c01860

Siddharth Rana, Chun-Kai Huang, Jun-Ting Ye, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng

{"title":"Delta-Doping Effect on the Performance of β-Ga2O3 MOSFETs with Different Gate Dielectric Layers","authors":"Siddharth Rana, Chun-Kai Huang, Jun-Ting Ye, Kenneth Järrendahl, Ching-Lien Hsiao, Ray-Hua Horng","doi":"10.1021/acsaelm.6c01860","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01860","url":null,"abstract":"Depletion-mode β-Ga2O3 MOSFETs can provide highly conductive channels, while further enhancement of channel carrier concentration and gate electrostatic control remains important for improving current-driving capability and reducing on-state resistance. In this work, the effects of delta-layer engineering and gate dielectric optimization on the electrical performance of β-Ga2O3 MOSFETs were systematically investigated. An ultrathin N+-Ga2O3 delta-doped layer (2 × 1012 cm–2) was introduced between the N–-Ga2O3 channel and the (Al0.21Ga0.79)2O3 barrier layer to enhance carrier concentration, while Al2O3, HfO2, and Al2O3/HfON/HZO gate dielectrics were employed to improve gate control. Compared with the undoped Al2O3 device, delta doping increased the ON-state current from 1.46 to 3.95 mA/mm and reduced the ON-resistance from 10.26 to 5.46 kΩ·mm. Further dielectric engineering yielded a maximum ON-state current of 7.55 mA/mm, an ON/OFF current ratio of 9.33 × 106, and a minimum ON-resistance of 2.34 kΩ·mm. Although enhanced ON-state drain current was achieved, the breakdown voltage decreased from 850 to 641 V, highlighting the trade-off between current-driving capability and breakdown voltage. These findings demonstrate that channel carrier engineering through delta doping, together with appropriate gate-dielectric engineering, provides an effective strategy for improving the performance of β-Ga2O3 power MOSFETs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9161–9170"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Sensitivity Silicon Avalanche Photodiodes through Edge Electric-Field Management 通过边缘电场管理的高灵敏度硅雪崩光电二极管

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-06 DOI: 10.1021/acsaelm.6c01723

Hongchen Zhang, Changbin Nie, Jiaze Xu, Lei Xiao, Kaicheng Liu, Feiying Sun, Xingzhan Wei

{"title":"High-Sensitivity Silicon Avalanche Photodiodes through Edge Electric-Field Management","authors":"Hongchen Zhang, Changbin Nie, Jiaze Xu, Lei Xiao, Kaicheng Liu, Feiying Sun, Xingzhan Wei","doi":"10.1021/acsaelm.6c01723","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01723","url":null,"abstract":"Traditional avalanche photodiodes (APDs) typically necessitate a compromise between the gain and dark current to achieve high sensitivity. In this work, we report an edge electric-field management strategy based on a virtual guard ring structure that simultaneously suppresses dark current and enhances gain. By adjusting the lateral spacing between the p-well multiplication region and the p-epi absorption region, the electric field profile at the edge of the virtual guard ring can be precisely tailored. Simulations were also performed to evaluate the influence of different lateral spacings on the electric field distribution and detector sensitivity. APDs with various lateral spacings were fabricated using a standard complementary metal–oxide–semiconductor (CMOS) process. Experimental results show that the device achieves an optimal balance between gain and noise at a lateral spacing of 26 μm, delivering a noise equivalent power (NEP) of 1.13 × 10–14 W·Hz-1/2, a responsivity of 21.7 A/W, and a specific detectivity (D*) of 2.63 × 1013 Jones. These findings demonstrate that the edge electric-field management strategy provides a pathway toward high-sensitivity APDs, enabling improved detection capabilities for low-light environments.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9118–9126"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Mobility Enhancement-Mode ITO/ZnO Thin-Film Transistors with an Asymmetric Vertical Channel Architecture 非对称垂直沟道结构的高迁移率增强模式ITO/ZnO薄膜晶体管

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-10 DOI: 10.1021/acsaelm.6c01847

Zahid Hassan, Nyx Currie, Archana T. Anilkumar, Sharmin Shila, Praveen Sekhar

{"title":"High-Mobility Enhancement-Mode ITO/ZnO Thin-Film Transistors with an Asymmetric Vertical Channel Architecture","authors":"Zahid Hassan, Nyx Currie, Archana T. Anilkumar, Sharmin Shila, Praveen Sekhar","doi":"10.1021/acsaelm.6c01847","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01847","url":null,"abstract":"Oxide thin-film transistors (TFTs) for displays, transparent electronics, and integrated sensors require enhancement-mode operation, high carrier mobility, device-to-device reproducibility, and operational stability. In this work, a 19-nm-thick asymmetric ITO/ZnO channel was fabricated by RF magnetron sputtering to balance gate-interface control, carrier transport, and contact coupling. The channel comprises a dielectric-facing ZnO layer, a repeated ITO/ZnO internal region, and an oxygenated ITO cap. Cross-sectional transmission electron microscopy confirms channel continuity and the intended thickness, with nanoscale vertical contrast modulation consistent with the designed stack. X-ray diffraction indicates nanocrystalline ordering, while X-ray photoelectron spectroscopy identifies defect-related oxygen environments. The TFT exhibits enhancement-mode operation with a threshold voltage of +1.71 V, a mean maximum effective linear-regime field-effect mobility of 50.29 ± 1.01 cm2 V–1 s–1 across eight devices, an ION/IOFF ratio exceeding 106, a subthreshold swing of 0.42 V dec–1, and a threshold-voltage hysteresis of 0.485 V. After 3000 s of operational gate–drain bias stress at VDS,stress = 30 V with VGS,stress = +30 and –30 V, the threshold-voltage shifts were +1.36 and –0.80 V, respectively, while the on-state current remained nearly unchanged. Broadband illumination at 250 W m–2 and heating to 150 °C produced negative threshold-voltage shifts of –0.81 and –1.90 V, respectively, consistent with defect-mediated carrier redistribution. These results demonstrate that asymmetric vertical composition engineering can combine normally-off operation, high and reproducible maximum effective field-effect mobility, and operational bias stability in sputtered ITO/ZnO TFTs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9146–9160"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149281996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal-Capped Bilayer Oxide Thin-Film Transistor for Stable Biopotential Sensing 用于稳定生物电位传感的金属覆盖双层氧化薄膜晶体管

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-14 DOI: 10.1021/acsaelm.6c00631

Hyeon Dong Kim, Sandeep Kumar Maurya, Sang Yeol Lee

{"title":"Metal-Capped Bilayer Oxide Thin-Film Transistor for Stable Biopotential Sensing","authors":"Hyeon Dong Kim, Sandeep Kumar Maurya, Sang Yeol Lee","doi":"10.1021/acsaelm.6c00631","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00631","url":null,"abstract":"This work reports oxide thin-film transistors (TFTs) based on a metal-capped (MC) 0.5SZTO/1SIZO bilayer channel for mV-level electrical sensing. The MC layer induces a characteristic ω-shaped current path that redistributes charge transport away from the dielectric/channel interface, thereby reducing carrier interaction with interface trap states. The TFTs exhibit a field-effect mobility of ∼56 cm2V–1s–1, an ION/IOFF ratio on the order of 1010, and a subthreshold swing of ∼290 mV decade–1. Statistical analysis of 20 devices confirms spatial uniformity, and cycle-to-cycle measurements over 80 sweeps show stable operation with minimal hysteresis. Under thermal and bias stress conditions (NBTS/PBTS), the devices exhibit a threshold voltage shift of less than 2 V, indicating suppressed charge trapping. Proof-of-concept biopotential-level electrical sensing is demonstrated by applying mV-level inputs directly to the MC layer, which modulate the channel current through electrostatic modulation and MC-assisted carrier injection. The device exhibits a sensitivity of 86.4% at –60 mV, with a monotonic increase to 335% at –180 mV. These results demonstrate that MC-induced current redistribution in bilayer oxide TFTs enables stable transistor operation and sensitive transduction of mV-level electrical inputs.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8937–8948"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149281995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparison of Silatrane-Based Molecular Nanolayers on Si as Adhesion Promoter and Diffusion Barrier 硅烷基分子纳米层的粘结促进剂和扩散屏障性能比较

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-05 DOI: 10.1021/acsaelm.6c01429

Chi-Chien Chang, Yi-Hsin Huang, Van-Truc Vu, Hao-Ying Lin, Ming-Tzer Lin, Chun-Jen Huang, Chih-Ming Chen

{"title":"Comparison of Silatrane-Based Molecular Nanolayers on Si as Adhesion Promoter and Diffusion Barrier","authors":"Chi-Chien Chang, Yi-Hsin Huang, Van-Truc Vu, Hao-Ying Lin, Ming-Tzer Lin, Chun-Jen Huang, Chih-Ming Chen","doi":"10.1021/acsaelm.6c01429","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01429","url":null,"abstract":"Si on-chip Cu metallization plays a vital role in advanced integrated-circuit packaging process. Key reliability concerns of evaluating Si/SiO2/Cu heterojunctions include adhesion property and diffusion barrier performance. Molecular self-assembling is a promising method to form a bifunctional molecular nanolayer at the SiO2/Cu heterojunction as an adhesion promoter and diffusion barrier. However, the self-polymerization tendency of organosilane molecules hinders the formation of a uniform nanolayer. In this study, amine- and carboxyl-terminated silatranes are deposited on the SiO2/Si substrate to form the molecular nanolayers for subsequent Cu metallization. Due to controlled molecular assembly capability, both silatranes can form a highly ordered molecular nanolayer, as validated by X-ray photoelectron spectroscopy and ellipsometer. In comparison, the carboxyl-terminated silatrane demonstrates a superior interfacial adhesion strength of 12.26 MPa, which is notably higher than that of its amine-terminated counterpart (9.35 MPa). The carboxyl-terminated silatrane also exhibits superior diffusion barrier performance, suppressing the formation of Cu silicides up to 500 °C, which is higher than that of the amine-terminated counterpart (450 °C). The exceptional performance of carboxyl-terminated silatrane is attributed to its unique molecular structure and electronic properties, as validated by density functional theory calculations. Carboxyl-terminated silatrane enables functional and controllable silanization on SiO2 surface, paving the way for its application as a key interlayer material in next-generation integrated-circuit packaging.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9051–9061"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancing Room-Temperature Chemiresistive Gas Sensors: Integrating 3D Nanoporous Chalcogenides, Photo-activation, and Physical AI for Intelligent Sensing Platforms 推进室温化学电阻气体传感器：集成3D纳米多孔硫族化合物，光激活和智能传感平台的物理AI

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-10-27 Epub Date: 2026-10-03 DOI: 10.1021/acsaelm.6c01587

Sunwoo Lee, Jae Han Chung, Jewook Kim, Myoung Woo Kang, Jeong-O Lee, Myungwoo Choi, Young-Seok Shim, Donghwi Cho

{"title":"Advancing Room-Temperature Chemiresistive Gas Sensors: Integrating 3D Nanoporous Chalcogenides, Photo-activation, and Physical AI for Intelligent Sensing Platforms","authors":"Sunwoo Lee, Jae Han Chung, Jewook Kim, Myoung Woo Kang, Jeong-O Lee, Myungwoo Choi, Young-Seok Shim, Donghwi Cho","doi":"10.1021/acsaelm.6c01587","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01587","url":null,"abstract":"Room-temperature (RT) chemiresistive gas sensing is essential for low-power, safe, and deployable chemical perception in distributed sensor networks, wearable devices, autonomous systems, and physical artificial intelligence (AI) platforms. Conventional semiconducting metal oxide (SMO)-based sensors have enabled sensitive and scalable gas detection, but their reliance on thermally activated oxygen ionosorption and surface redox reactions often necessitates elevated operating temperatures, leading to high power consumption, accelerated material degradation, and integration constraints. Chalcogenide semiconductors offer a promising alternative because their tunable band structures, surface-sensitive charge transport, reduced dielectric screening, and interfacial charge-transfer characteristics can facilitate gas-induced carrier modulation at reduced temperatures. This review examines RT chalcogenide chemiresistors through four coupled design levels: electronic transduction, structural amplification, photo-activated kinetic control, and intelligent signal interpretation. We first discuss adsorption-induced charge transfer, gas–surface interactions, and heterointerface modulation as the electronic foundations of RT sensing, and then summarize three-dimensional chalcogenide architectures that increase surface area, edge-site exposure, diffusion, and transport pathways. Photo-activation is highlighted as a nonthermal strategy for accelerating response and recovery, enabling visible-light operation, and improving photon utilization. Finally, we distinguish experimentally demonstrated machine-learning-assisted chalcogenide sensing from the additional sensing–decision–action integration required for physical AI.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8882–8908"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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