ACS Applied Electronic Materials最新文献_第7页

High-Sensitivity Solution-Processed Organic Phototransistor Based on a Bulk Heterojunction with a Persistent Radical as the Electron Acceptor 以持久自由基为电子受体的体异质结为基础的高灵敏度溶液处理有机光电晶体管

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 DOI: 10.1021/acsaelm.4c0233410.1021/acsaelm.4c02334

Giulia Baroni, Francesco Reginato, Sara Mattiello, Salvatore Moschetto, Mario Prosa, Margherita Bolognesi*, Luca Beverina and Stefano Toffanin*,

{"title":"High-Sensitivity Solution-Processed Organic Phototransistor Based on a Bulk Heterojunction with a Persistent Radical as the Electron Acceptor","authors":"Giulia Baroni, Francesco Reginato, Sara Mattiello, Salvatore Moschetto, Mario Prosa, Margherita Bolognesi*, Luca Beverina and Stefano Toffanin*, ","doi":"10.1021/acsaelm.4c0233410.1021/acsaelm.4c02334","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02334https://doi.org/10.1021/acsaelm.4c02334","url":null,"abstract":"In bilayer organic phototransistors (OPTs), charge transport and light-sensing functionalities are separately performed and optimized in two different layers. For optimizing the sensitivity of solution-processed bilayer OPTs, the approach of using a donor–acceptor bulk heterojunction (BHJ) as the light-sensing layer is well established in the literature, but the choice of the electron-accepting materials is often limited to fullerene-soluble derivatives or to standard nonfullerene acceptors. Herein, we report the unprecedented use of an organic persistent radical as an electron acceptor in the BHJ light-sensing layer of solution-processed bilayer OPTs. The radical acceptor is coupled at different donor:acceptor ratios to a low-band-gap polymer that absorbs in the near-infrared (NIR) region. At a donor:acceptor ratio of 1:3, the organic radical forms isolated domains within the BHJ. Such a morphology, coupled with the strong electron-accepting characteristics of the radical, leads to efficient trapping of electrons and efficient hole transport within the BHJ, as measured in charge-selective devices operated in the space-charge limited current (SCLC) range. This, together with the chemical and photostability of the persistent radical, allows us to obtain an OPT with photosensitivity (P) of 1 × 105 in response to NIR irradiation at 2 mW/cm2 and excellent photostability over time.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3694–3703 3694–3703"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02334","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room-Temperature Fluorescent n-Type Columnar Liquid Crystals Based on Perylene Hydrazides 基于苝酰肼的室温n型荧光柱状液晶

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 DOI: 10.1021/acsaelm.5c0015510.1021/acsaelm.5c00155

Mrinmoy Roy, Paresh Kumar Behera, Indrajit Mondal, Abhinandha Asokh, Doddamane Sreenivasamurthy Shankar Rao, Satyaprasad P. Senanayak* and Achalkumar Ammathnadu Sudhakar*,

{"title":"Room-Temperature Fluorescent n-Type Columnar Liquid Crystals Based on Perylene Hydrazides","authors":"Mrinmoy Roy, Paresh Kumar Behera, Indrajit Mondal, Abhinandha Asokh, Doddamane Sreenivasamurthy Shankar Rao, Satyaprasad P. Senanayak* and Achalkumar Ammathnadu Sudhakar*, ","doi":"10.1021/acsaelm.5c0015510.1021/acsaelm.5c00155","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00155https://doi.org/10.1021/acsaelm.5c00155","url":null,"abstract":"Symmetrical and unsymmetrical perylene hydrazide derivatives were designed and synthesized, and their properties were investigated. The unsymmetrical perylene derivative features a hydrazide unit at one end of the perylene molecule and a swallow-tail amine (HI) or a diester moiety (HE) at the other end, exhibiting a room-temperature columnar mesophase. All three molecules were found to be thermally stable at high temperature, and the unsymmetrical perylene derivatives HI and HE have shown columnar phases of hexagonal symmetry. Photophysical studies reveal the highly fluorescent nature of HI and HE, with the latter showing a higher relative quantum yield and bright red emission in the solid state as well. All three derivatives were investigated for their charge carrier mobility measurements by the space-charge-limiting-current (SCLC) method in an electron-only device. Among the three molecules, it was seen that the symmetric derivative HH showed higher electron mobility, though it did not stabilize any liquid crystalline phase.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3892–3904 3892–3904"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors. 基于gcmos的记忆电阻器的面积相关电阻开关和界面动力学。

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 eCollection Date: 2025-05-13 DOI: 10.1021/acsaelm.5c00403

Anni Antola, Johanna Laaksonen, Hannu Huhtinen, Ilari Angervo, Sari Granroth, Alejandro Schulman, Pekka Laukkanen, Petriina Paturi

{"title":"Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors.","authors":"Anni Antola, Johanna Laaksonen, Hannu Huhtinen, Ilari Angervo, Sari Granroth, Alejandro Schulman, Pekka Laukkanen, Petriina Paturi","doi":"10.1021/acsaelm.5c00403","DOIUrl":"10.1021/acsaelm.5c00403","url":null,"abstract":"This study explores the area-dependent resistive switching (RS) characteristics of Gd0.2Ca0.8MnO3 (GCMO)-based memristors with aluminum (Al) and gold (Au) electrodes, emphasizing their potential for neuromorphic computing applications. Using a combination of electrical measurements and X-ray photoelectron spectroscopy (XPS), we demonstrate that the high-resistance (HRS) and low-resistance (LRS) states exhibit predictable scaling with device area, with HRS resistances ranging from 107 to 108 Ω and LRS from 105 to 107 Ω, supporting the hypothesis of interface-type RS. XPS depth profiling revealed notable differences in AlO x interfacial layer composition between HRS and LRS, with a higher oxide content and a widened interfacial region in HRS. Additionally, the multistate RS capability of up to ten distinct levels was achieved by modulating applied voltages, highlighting GCMO's suitability as a material for synaptic weight storage in artificial neural networks. Our findings underscore GCMO's promise for energy-efficient, scalable memristor-based systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4242-4250"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12080247/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144091971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual Behavior of Transparent Conducting CuS Ultrathin Film 透明导电cu超薄膜的双重行为

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 DOI: 10.1021/acsaelm.5c0032210.1021/acsaelm.5c00322

Sushil Swaroop Pathak*, Sanchaita Dey, Anurag A. Chaudhari, Gotluru Kedarnath* and Leela S. Panchakarla*,

引用次数: 0

Multichannel Wearable Sensor Based on Porous Structure for Simultaneous Acquisition of Different Mechanical Signals 基于多孔结构的多通道可穿戴传感器同时采集不同机械信号

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 DOI: 10.1021/acsaelm.5c0033110.1021/acsaelm.5c00331

Lei Wen*, Haizhou Huang, YuHeng Huang, Jiahong Kang, YunHong Liu, Chun Li, Haoxiang Li, Zheng Song, Chaochen Li, Yunkai Zhang and Ling Jiang*,

{"title":"Multichannel Wearable Sensor Based on Porous Structure for Simultaneous Acquisition of Different Mechanical Signals","authors":"Lei Wen*, Haizhou Huang, YuHeng Huang, Jiahong Kang, YunHong Liu, Chun Li, Haoxiang Li, Zheng Song, Chaochen Li, Yunkai Zhang and Ling Jiang*, ","doi":"10.1021/acsaelm.5c0033110.1021/acsaelm.5c00331","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00331https://doi.org/10.1021/acsaelm.5c00331","url":null,"abstract":"The intricate mechanical signals inherent in human motion pose significant challenges for the accurate and real-time recognition of postures, necessitating the development of sensors capable of detecting multiple mechanical stimuli concurrently. Herein, a resistance and capacitance multichannel sensor with porous structure is reported. Benefitting from the pores introduced by the prefoaming and steeping process, the resistance channel exhibits heightened sensitivity to strain (gauge factor, GF, of 2.112 for 0–80% strain and 14.227 for 80–150% strain) while remaining nearly insensitive to pressure. Conversely, the capacitance channel demonstrates high sensitivity to pressure (sensitivity, S, of 41.46 Pa–1 for 0–5.5 kPa pressure) and significantly lower sensitivity to strain. The sensor’s superior anti-cross-talk capability allows for the precise differentiation of motion characteristics augmented by machine learning algorithms, enabling the accurate identification of various joint and finger types and states with high recognition rates of 99.89% and 98.56%, respectively. Additionally, a Tai Chi posture recognition system has been developed, leveraging a lightweight hybrid convolutional neural network–long-term memory (CNN-LSTM) model, achieving a remarkable classification accuracy of nearly 99.85% for four distinct continuous Kungfu forms.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4172–4181 4172–4181"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Sensitivity Solution-Processed Organic Phototransistor Based on a Bulk Heterojunction with a Persistent Radical as the Electron Acceptor. 以持久自由基为电子受体的体异质结为基础的高灵敏度溶液处理有机光电晶体管。

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-23 eCollection Date: 2025-05-13 DOI: 10.1021/acsaelm.4c02334

Giulia Baroni, Francesco Reginato, Sara Mattiello, Salvatore Moschetto, Mario Prosa, Margherita Bolognesi, Luca Beverina, Stefano Toffanin

{"title":"High-Sensitivity Solution-Processed Organic Phototransistor Based on a Bulk Heterojunction with a Persistent Radical as the Electron Acceptor.","authors":"Giulia Baroni, Francesco Reginato, Sara Mattiello, Salvatore Moschetto, Mario Prosa, Margherita Bolognesi, Luca Beverina, Stefano Toffanin","doi":"10.1021/acsaelm.4c02334","DOIUrl":"10.1021/acsaelm.4c02334","url":null,"abstract":"In bilayer organic phototransistors (OPTs), charge transport and light-sensing functionalities are separately performed and optimized in two different layers. For optimizing the sensitivity of solution-processed bilayer OPTs, the approach of using a donor-acceptor bulk heterojunction (BHJ) as the light-sensing layer is well established in the literature, but the choice of the electron-accepting materials is often limited to fullerene-soluble derivatives or to standard nonfullerene acceptors. Herein, we report the unprecedented use of an organic persistent radical as an electron acceptor in the BHJ light-sensing layer of solution-processed bilayer OPTs. The radical acceptor is coupled at different donor:acceptor ratios to a low-band-gap polymer that absorbs in the near-infrared (NIR) region. At a donor:acceptor ratio of 1:3, the organic radical forms isolated domains within the BHJ. Such a morphology, coupled with the strong electron-accepting characteristics of the radical, leads to efficient trapping of electrons and efficient hole transport within the BHJ, as measured in charge-selective devices operated in the space-charge limited current (SCLC) range. This, together with the chemical and photostability of the persistent radical, allows us to obtain an OPT with photosensitivity (P) of 1 × 105 in response to NIR irradiation at 2 mW/cm2 and excellent photostability over time.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3694-3703"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12080257/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144091973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexo-Photovoltaic Effect in a Bandgap-Engineered Ferroelectric BaTiO3-Based Epitaxial Thin Film 带隙工程铁电batio3基外延薄膜的柔性光伏效应

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-22 DOI: 10.1021/acsaelm.5c0011310.1021/acsaelm.5c00113

Sarath Namboodi Vayalil, Shubham Kumar and Pattukkannu Murugavel*,

{"title":"Flexo-Photovoltaic Effect in a Bandgap-Engineered Ferroelectric BaTiO3-Based Epitaxial Thin Film","authors":"Sarath Namboodi Vayalil, Shubham Kumar and Pattukkannu Murugavel*, ","doi":"10.1021/acsaelm.5c0011310.1021/acsaelm.5c00113","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00113https://doi.org/10.1021/acsaelm.5c00113","url":null,"abstract":"The ferroelectric photovoltaic (PV) effect has several advantages over other PV systems because of the reported above-bandgap photovoltage, switchable characteristics, ability to be free from the thermodynamic Shockley–Queisser limit, environmental stability, etc. Several methods have been adopted to improve the PV performance of the ferroelectric oxides. In this work, the strain gradient-induced flexoelectric effect is employed to enhance and extend the PV effect to a high temperature. This novel mechanism, called the flexo-photovoltaic effect, is demonstrated on the bandgap-tuned 0.95BaTiO3–0.05Bi(Ni1/2Nb1/2)O3+δ film grown epitaxially under the compressively strained condition on the SrRuO3-buffered SrTiO3(001) substrate. The enhanced and nonswitchable PV response with a short-circuit current density (JSC) of 11.2 μA/cm2 and an open-circuit voltage (VOC) of 0.3 V, which are larger than the value reported for the parent BaTiO3 films, is attributed to the calculated strain gradient-induced flexoelectric field (Ef = 120 kV/cm). The observed switchable but low value of PV response (JSC = 1 nA/cm2 and VOC = 0.15 V) measured along the direction (in-plane direction) perpendicular to the flexoelectric field direction (out-of-plane direction) reiterates the effect of the flexoelectric field on the PV response. In addition, the observed PV response at 135 °C, which is well above the Curie temperature (TC) of the bulk sample, gives additional evidence for the flexo-photovoltaic effect in epitaxial oxide thin films. Overall, the demonstrated flexo-photovoltaic effect opens up a wide range of oxide systems, including centrosymmetric oxides for PV applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3837–3847 3837–3847"},"PeriodicalIF":4.3,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D-Printed Fluidically Tunable Frequency Selective Surface with Microcontroller-Driven Pumping 3d打印流体可调频率选择表面与微控制器驱动泵

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-22 DOI: 10.1021/acsaelm.5c0012710.1021/acsaelm.5c00127

Goutham Reddy Mettu*, Karthikeyan Sholampettai Subramanian* and Nrusingha Charan Pradhan*,

{"title":"3D-Printed Fluidically Tunable Frequency Selective Surface with Microcontroller-Driven Pumping","authors":"Goutham Reddy Mettu*, Karthikeyan Sholampettai Subramanian* and Nrusingha Charan Pradhan*, ","doi":"10.1021/acsaelm.5c0012710.1021/acsaelm.5c00127","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00127https://doi.org/10.1021/acsaelm.5c00127","url":null,"abstract":"Frequency selective surfaces (FSS) are widely recognized for their ability to manipulate electromagnetic waves by filtering specific frequency bands. Traditionally, FSS consists of a periodic array of conductive patterns on a dielectric substrate and operates at fixed frequency ranges. However, the static nature of these designs limits their adaptability in dynamic environments. This study introduces an additively manufactured tunable FSS featuring integrated fluidic channels. The conductive patterns are created using a copper aerosol spray with a negative masking technique. By injecting dielectric fluids with varying permittivity into fluidic channels, the effective permittivity of the substrate is altered, enabling dynamic tuning of the frequency band. The proposed FSS demonstrates tunable resonance, operating between 4.28 GHz (with empty channels) and 3.52 GHz (with channels filled with distilled water), enabling adaptive filtering capabilities. A microcontroller-driven micropump ensures precise fluid delivery, minimizing shear stress and enhancing repeatability. Additionally, the ESP32 microcontroller provides wireless control of the pump, enabling remote tuning. Experimental results demonstrate that the proposed FSS performs closely to simulated responses with minor deviations, exhibits polarization insensitivity, and maintains stability up to a 60° incidence angle. This tunable FSS offers a practical solution for real-time frequency tuning, with potential applications in adaptive communication systems and electronic warfare.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3864–3869 3864–3869"},"PeriodicalIF":4.3,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Co-electrode Based on Bifunctional Sb2S3 Film: Achieving Internal Integration of Microsupercapacitor-Powered Photodetectors 基于双功能Sb2S3薄膜的共电极：实现微型超级电容器供电光电探测器的内部集成

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-21 DOI: 10.1021/acsaelm.5c0033810.1021/acsaelm.5c00338

Zixuan Chen, Qianxi Dang, Changyuan Yan and Xianyu Deng*,

{"title":"The Co-electrode Based on Bifunctional Sb2S3 Film: Achieving Internal Integration of Microsupercapacitor-Powered Photodetectors","authors":"Zixuan Chen, Qianxi Dang, Changyuan Yan and Xianyu Deng*, ","doi":"10.1021/acsaelm.5c0033810.1021/acsaelm.5c00338","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00338https://doi.org/10.1021/acsaelm.5c00338","url":null,"abstract":"With the rapid development of electronics and artificial intelligence, photodetectors tend to be light and miniature, with the conventional external power sources being replaced by portable energy devices, such as microsupercapacitors (MSC). However, the independent fabrication and extra connection system of different function units lead to power consumption and manufacturing challenges. Therefore, in this study, a self-powered photodetector is fabricated based on the “co-electrode” of Sb2S3 film. It means that the part of the Sb2S3 film is employed as the electrode of microsupercapacitor (MSC) array to store energy, while the other part directly serves as a photodetector with an extremely simple structure without any interlayers. Such a “co-electrode” configuration achieves the seamless integration between the energy-supply and photodetection units. Driven by the MSC array, this integrative photodetector exhibits high voltage responsivities to the sunlight and monochromatic lights within a broad intensity range. This self-powered photodetector could be on-chip integrated with a printed circuit board (PCB) to realize the real-time detection and information display of sunlight, offering an insight into the fabrication of portable devices applied in the field such as weather forecasting in outdoor activities.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4161–4171 4161–4171"},"PeriodicalIF":4.3,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Dot-Based Flexible Photodetectors: A Review 基于量子点的柔性光电探测器研究进展

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-21 DOI: 10.1021/acsaelm.5c0030410.1021/acsaelm.5c00304

Kanika Chauhan*, Ankit Kumar Pandey and Mitradip Bhattacharjee,

{"title":"Quantum Dot-Based Flexible Photodetectors: A Review","authors":"Kanika Chauhan*, Ankit Kumar Pandey and Mitradip Bhattacharjee, ","doi":"10.1021/acsaelm.5c0030410.1021/acsaelm.5c00304","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00304https://doi.org/10.1021/acsaelm.5c00304","url":null,"abstract":"Photodetectors (PDs) are a crucial area of research in photonic devices, essential for light-sensing technology across various applications. Recently, the development of flexible photodetectors (FPDs) has represented a transformative advancement, offering remarkable properties, such as the ability to bend, twist, and conform to different surfaces. This flexibility opens the door to a plethora of applications including wearable electronics, health monitoring devices, smart clothing, and artificial skin. Researchers are actively exploring ways to enhance FPD performance by improving performance parameters, such as responsivity, detectivity, sensitivity, on–off current ratio, response time, dark current, and stability. Quantum dots (QDs) have emerged as powerful tools in advancing PD technology. Due to the quantum confinement effect, QDs offer tunable bandgaps, enabling broadband response from ultraviolet (UV) to infrared (IR) regions. The integration of QDs into FPDs leverages these properties, leading to significant improvements in device performance. This Perspective provides a comprehensive overview of QD-based FPDs, discussing various QD materials and flexible substrates utilized in these devices. It also highlights cost-effective solution-processed approaches for QD synthesis and the role of ligand exchange methods in optimizing device performance. The review delves into the diverse applications of QD-based FPDs and addresses the challenges and future research directions needed to further advance this promising field.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3632–3649 3632–3649"},"PeriodicalIF":4.3,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0