ACS Applied Electronic Materials最新文献

{"title":"Surface-Tuned Organic Thin-Film Transistors for High-Performance Mercury Detection","authors":"Ranjith Kore,&nbsp;, ,&nbsp;Narendra Babu Simhachalam,&nbsp;, ,&nbsp;Venkata Sreenivas Narayanabhatla Puli,&nbsp;, ,&nbsp;Vipin Kumar,&nbsp;, ,&nbsp;Koteshwar Rao Ravulapelly,&nbsp;, ,&nbsp;Vijaya Kumar Bhukya,&nbsp;, ,&nbsp;Prabhakar Chetti,&nbsp;, and ,&nbsp;Someshwar Pola*,&nbsp;","doi":"10.1021/acsaelm.5c00746","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00746","url":null,"abstract":"<p >This research pioneers the development of portable, rapid response chemical sensors for on-site mercury (Hg) detection, addressing a critical need for environmental monitoring. A suite of donor–acceptor systems composed of triphenylamine (TPA) and 3-(1H-pyrazol-4-yl)acrylonitrile (PzAN), including DPPDA, DFPPA, DPMPPA, DPPPA, and DMPPPA, was meticulously synthesized and characterized by leveraging single-crystal X-ray diffraction and photophysical analyses to elucidate their structural and optical properties. These molecules were engineered for selective mercury ion binding, forming an active sensing layer within organic thin-film transistors (OTFTs). By precisely depositing these molecules onto OTFT devices, we achieved nondestructive integration, enabling real-time Hg (II) ion detection through modulation of the OTFT’s electrical characteristics. Notably, the sensor molecules’ ability to permeate the OTFT’s active layer boundaries induced significant electrical property alterations, a key mechanism for sensitive detection. Optimized deposition protocols ensured uniform sensor layers, maximizing the device sensitivity. Surface morphology, quantified via atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), revealed a direct correlation between surface roughness and sensor performance. X-ray photoelectron spectroscopy (XPS) confirmed the sensing mechanism, demonstrating the direct binding of Hg (II) ions to the donor–acceptor molecules. Among the synthesized molecules, DFPPA exhibited superior performance, characterized by high electrical mobility, a substantial on/off ratio, and rapid Hg (II) ion detection kinetics. This study delivers critical insights into the design and fabrication of high-performance mercury sensors utilizing tailored organic molecules and OTFT platforms, highlighting the paramount importance of controlled growth and surface engineering for achieving optimal sensing capabilities.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8331–8347"},"PeriodicalIF":4.7,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor","authors":"Murat Artuc*,&nbsp; and ,&nbsp;Selim Acar,&nbsp;","doi":"10.1021/acsaelm.5c01360","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01360","url":null,"abstract":"<p >We report on the fabrication and UV photoresponse characteristics of TiO₂-based phototransistors (TiO₂–PTs) incorporating a TiO₂/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined <i>I</i>–<i>V</i> characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 10¹⁰ Jones at <i>V</i>_GS = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO₂-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8561–8570"},"PeriodicalIF":4.7,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion Cross-Linked High-Strength and Toughness Multinetwork Ionic Organic Hydrogels for Flexible Electronic Devices","authors":"Lingling Meng*,&nbsp;, ,&nbsp;Liu Da,&nbsp;, ,&nbsp;Liu En,&nbsp;, ,&nbsp;Wu Ze,&nbsp;, and ,&nbsp;Miao Xu,&nbsp;","doi":"10.1021/acsaelm.5c01252","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01252","url":null,"abstract":"<p >Because traditional ionic conductive hydrogels cannot simultaneously exhibit excellent tensile properties, strong conductivity, and high sensitivity, their application in the field of flexible electronic devices is limited. To address this issue, this paper proposes a simple one-pot method to prepare multinetwork ionic organic hydrogels. Here, poly(vinyl alcohol) (PVA), acrylamide (AM), hydroxyethyl cellulose (HEC), sodium alginate (SA), and zinc chloride (ZnCl₂) are dissolved in a dimethyl sulfoxide-water mixture (DMSO/H₂O). First, through photopolymerization of free radicals, PAM long chains form the first layer of a chemically cross-linked network. Subsequently, the SA molecular chain chelates and coordinates with Zn²⁺ to construct a second layer of an ion cross-linked network. Finally, during the continuous freeze–thaw process, PVA molecular chains form a third layer of a physically cross-linked network. The resulting multinetwork ionic organic hydrogel demonstrates excellent tensile properties (330%, 1.26 MPa), good conductivity (3.21 S/m), high sensitivity (GF can reach 8.19), a stable resistance temperature coefficient (TCR of 0.682/°C), and working stability in different pH environments. Therefore, the hydrogel can be successfully applied in flexible strain sensors, supercapacitors, and friction nanogenerators to enable motion monitoring, traceless writing, electric energy storage, and energy conversion. This work provides a novel approach for the application of ionic organic hydrogels in future flexible electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8476–8491"},"PeriodicalIF":4.7,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unidirectional Epitaxy of Wafer-Scale MoS2 on Sapphire via Growth Kinetics Control","authors":"Rongxiang Ding,&nbsp;, ,&nbsp;Ziyang Zhang,&nbsp;, ,&nbsp;Hao Wu,&nbsp;, ,&nbsp;Liwei Deng,&nbsp;, ,&nbsp;Yuanjian Yuan,&nbsp;, ,&nbsp;Yue Huang,&nbsp;, ,&nbsp;Mengjian Zhu*,&nbsp;, and ,&nbsp;Ziao Tian*,&nbsp;","doi":"10.1021/acsaelm.5c01522","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01522","url":null,"abstract":"<p >Wafer-scale single-crystalline MoS₂ epitaxially grown on sapphire by chemical vapor deposition (CVD) is expected to exhibit exceptional electrical and optoelectronic properties for the large-scale integration of two-dimensional (2D) semiconductor circuits. Prior studies proposed thermodynamic pathways for achieving unidirectional MoS₂ domains. However, thermodynamic conditions are insufficient to achieve wafer-scale growth of unidirectional MoS₂, while kinetic control during epitaxy remains unexplored. Here, we demonstrate the kinetics-driven adatoms diffusion and nuclei rotation by controlling the epitaxy temperature during the CVD process. We achieve the epitaxy of triangular MoS₂ single-crystalline domains with a single orientation on sapphire. By carefully designing the Mo oxidation, dual-source delivery, and two-stage annealing, the nucleation density of MoS₂ is reduced, and the domain size and uniformity are greatly enhanced. The fine control of the growth kinetics boosts the 2 in. wafer-scale continuous MoS₂ single-crystalline film. The uniformity and single crystallinity were confirmed by Raman spectroscopy, photoluminescence, atomic force microscopy, low-energy electron diffraction, and second-harmonic generation. Furthermore, field-effect MoS₂ transistors exhibited high room-temperature mobility up to 118 cm²·V^–¹·s^–¹, high on/off ratio over 10¹⁰, and steep subthreshold swing of ∼85 mV·dec^–1. This work not only provides a feasible strategy for the manufacture of high-quality wafer-scale MoS₂ films but also sheds light on the growth of other 2D semiconductor wafers.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8636–8645"},"PeriodicalIF":4.7,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Identifying the Chemical Structure of Indium–Gallium–Zinc Oxide Thin Films with Oxygen Vacancy Variation","authors":"Jong-Cheol Lee,&nbsp;, ,&nbsp;Jinheon Choi,&nbsp;, ,&nbsp;Tackhwi Lee,&nbsp;, ,&nbsp;Minsik Kim,&nbsp;, ,&nbsp;Seongmin Ahn,&nbsp;, ,&nbsp;Junghan Lee,&nbsp;, ,&nbsp;Sungho Lee,&nbsp;, ,&nbsp;Jihyun Kho,&nbsp;, ,&nbsp;Yongsoon Choi,&nbsp;, ,&nbsp;Kwangmin Park,&nbsp;, and ,&nbsp;Cheol Seong Hwang*,&nbsp;","doi":"10.1021/acsaelm.5c01023","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01023","url":null,"abstract":"<p >Controlling the oxygen vacancy (V_O), or more precisely, the local oxygen deficiency, in amorphous oxide semiconductor InGaZnO (IGZO) thin films during device fabrication is crucial because it affects the transfer characteristics and reliability of thin-film transistor (TFT) devices. Measuring the O 1s peak in X-ray photoelectron spectroscopy (XPS) and performing peak deconvolution have been widely used to identify the V_O status, where the deconvoluted O 1s peak with a binding energy (BE) between 531 and 532 eV is considered to represent V_O. However, this work reveals that the In 3d_5/2 peak is a more reliable indicator of the V_O (or carrier) concentration, where a higher In 3d_5/2 peak BE corresponds to a lower V_O concentration and higher TFT threshold voltages. The O 1s peak at 531–532 eV BE did not originate from the oxygen ions near the V_O inside the IGZO film but rather from the oxygen atoms in the acetate molecules on the surface. When the IGZO surface was contaminated by OH and CO₂ from the air, more acetate was formed, increasing the peak intensity. Moreover, such adsorption was more prevalent in materials exhibiting weak metal–oxygen bonds. Notably, the O 1s peak at 531–532 eV BE disappeared when the acetate on the IGZO film surface was in situ sputter-cleaned in the XPS chamber.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8393–8399"},"PeriodicalIF":4.7,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of O2 Surface Treatment on Device Performance of AlGaN/GaN HEMTs with In Situ Crystalline SiN Cap Layer","authors":"Xin Luo,&nbsp;, ,&nbsp;Tieying Zhang,&nbsp;, ,&nbsp;Peng Cui*,&nbsp;, ,&nbsp;Handoko Linewih,&nbsp;, ,&nbsp;Kaifa Qi,&nbsp;, ,&nbsp;Xinkun Yan,&nbsp;, ,&nbsp;Siheng Chen,&nbsp;, ,&nbsp;Liu Wang,&nbsp;, ,&nbsp;Jiacheng Dai,&nbsp;, ,&nbsp;Zhaojun Lin,&nbsp;, ,&nbsp;Xiangang Xu,&nbsp;, and ,&nbsp;Jisheng Han*,&nbsp;","doi":"10.1021/acsaelm.5c01428","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01428","url":null,"abstract":"<p >This study demonstrates the impacts of O₂ surface treatment (OT) process conditions on the AlGaN/GaN HEMTs with an <i>in situ</i> crystalline SiN cap layer. The effects of the O₂ surface treatment on device performance, including off-state leakage, threshold voltage, on-state current, and breakdown voltage, are studied. By comparing O₂ plasma treatments with three different power level process conditions of 100, 200, and 400 W, it is found that a moderate 100 W treatment power can effectively reduce device leakage current while increasing the device breakdown voltage to 890 V, which is about 10% higher than the untreated sample. TEM and XPS analyses confirmed that the crystalline SiN cap layer transformed into amorphous SiON after the O₂ surface treatment, and the AlGaN barrier layer was also partially oxidized. The formation of SiON and partial oxidation of AlGaN lead to an increase in the height of the gate Schottky barrier and a weakening of the electric field along the gate-to-drain side, which is the reason for the decrease in the off-state leakage and the increase in the breakdown voltage of the device after the O₂ surface treatment.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8592–8597"},"PeriodicalIF":4.7,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Doping of PEDOT:PSS via Methylammonium Iodide and Trifluoroacetic Acid for Highly Conductive Polymer Electrodes","authors":"Sumin Lee,&nbsp;, ,&nbsp;Jae Won Choi,&nbsp;, ,&nbsp;Hojun Yun,&nbsp;, ,&nbsp;Jihwan Ju,&nbsp;, ,&nbsp;Chanwoo Park,&nbsp;, ,&nbsp;Seok Ju Kang,&nbsp;, ,&nbsp;Jong S. Park*,&nbsp;, ,&nbsp;Sung Hyun Kwon*,&nbsp;, and ,&nbsp;Beomjin Jeong*,&nbsp;","doi":"10.1021/acsaelm.5c01250","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01250","url":null,"abstract":"<p >Poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) is a widely used conducting polymer in organic electronics. Numerous doping strategies have been developed to enhance its electrical conductivity, most of which rely on secondary doping via acid-induced removal of the insulating PSS. However, these approaches often lack primary doping mechanisms that enrich charge carriers in the PEDOT chains. Herein, we propose a synergistic doping strategy that significantly enhances the conductivity of acid-treated PEDOT:PSS films by introducing methylammonium iodide (MAI) as a dopant. A simple one-step spin-coating of an MAI solution dissolved in trifluoroacetic acid (TFA) onto pristine PEDOT:PSS results in a dramatic increase in conductivity up to 1282 ± 90 S cm^–1 for a 39 nm film, compared to pristine (∼0.1 S cm^–1) and TFA-treated films (625 ± 29 S cm^–1). Comprehensive spectroscopic, morphological, structural, and theoretical analyses reveal that MAI facilitates PSS removal, promotes polaron formation in PEDOT, and stabilizes the doped structure. Furthermore, we demonstrate the practical applicability of MAI/TFA-treated PEDOT:PSS films as robust, high-performance electrodes in organic devices such as electrochromic devices exhibiting excellent operational stability.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8456–8465"},"PeriodicalIF":4.7,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Carrier Transport and Stability in Thin-Film Transistors Based on ITZO/IGZO Heterojunction Channel and Al2O3 Passivation","authors":"Zhenyuan Xiao,&nbsp;, ,&nbsp;Quang Trung Le,&nbsp;, ,&nbsp;Shaocong Lv,&nbsp;, ,&nbsp;Aimin Song,&nbsp;, ,&nbsp;Jiawei Zhang*,&nbsp;, ,&nbsp;Jidong Jin*,&nbsp;, and ,&nbsp;Jaekyun Kim*,&nbsp;","doi":"10.1021/acsaelm.5c01299","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01299","url":null,"abstract":"<p >The mobility-stability trade-off in oxide semiconductor thin-film transistors (TFTs) limits their use in modern electronics, especially in display technologies. Here, we present high-performance ITZO/IGZO heterojunction TFTs with an Al₂O₃ passivation layer, achieving significant enhancements in both the stability and carrier transport. The formation of a two-dimensional electron gas (2DEG) at the heterointerface is found to significantly enhance the carrier transport, resulting in increased saturation mobility by up to 50% compared to single-channel ITZO TFTs. To address the negative threshold voltage due to increased carrier concentration associated with the 2DEG formation, an Al₂O₃ passivation layer is introduced to suppress channel defects, which successfully induces a positive shift in threshold voltage as well as further enhances electrical performance and stability. The optimized Al₂O₃-passivated ITZO/IGZO heterojunction TFTs exhibit a high saturation field-effect mobility of 48.34 ± 0.85 cm²/Vs, a positive threshold voltage of 0.56 ± 0.02 V, a low subthreshold swing of 59.96 ± 3.24 mV/dec, an on/off current ratio exceeding 10⁸, and excellent operational stability. These findings suggest that ITZO/IGZO heterojunction TFTs with an Al₂O₃ passivation layer offer considerable potential for next-generation display applications and beyond, paving the way for enhanced performance in future electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8322–8330"},"PeriodicalIF":4.7,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Capacitive Tactile Sensors Enabled by Self-Healing PDMS Networks with Enhanced Dielectric Properties via Cross-linking Density and Organic Salt Engineering","authors":"Yeonjeong Nam,&nbsp;, ,&nbsp;My Thi Ngoc Nguyen,&nbsp;, and ,&nbsp;Jun Seop Lee*,&nbsp;","doi":"10.1021/acsaelm.5c01114","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01114","url":null,"abstract":"<p >The demand for flexible tactile sensors in wearable electronics and soft robotics has significantly increased, necessitating the development of dielectric materials that provide not only high performance but also long-term durability. Herein, we present a self-healing polydimethylsiloxane (PDMS) network engineered to improve dielectric properties through increased cross-linking density and the integration of an organic salt. In the polymer network, ester-functionalized cross-linkers serve as high-permittivity units, facilitating dipolar polarization and thus elevating the overall dielectric constant. To systematically evaluate the influence of cross-linking density, a range of cross-linkers with different numbers of ester groups was incorporated into the self-healing PDMS matrix. Despite the improvements, higher cross-linking density often results in increased stiffness, potentially compromising the flexibility of the material. To address this limitation, we incorporated the organic salt nickel(II) acetylacetonate (Ni(acac)₂), which substantially decreased the Young’s modulus and further promoted dielectric enhancement through the formation of an electric double layer. The optimized PDMS film, when implemented in a capacitive tactile sensor, demonstrated a rapid response time (&lt;0.2 s), elevated sensitivity (0.1898 kPa^–1), and robust self-healing capability at 50 °C within 2 h, recovering up to 96% of its original electrical performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8419–8427"},"PeriodicalIF":4.7,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mobility Enhancement in Monolayer MoS2 Transistors on a Polyimide Substrate by Reducing Localized Charge Trap Effect","authors":"Yakui Mu,&nbsp;, ,&nbsp;Siyu Liu,&nbsp;, ,&nbsp;Yanming Wang,&nbsp;, ,&nbsp;Chen Shu,&nbsp;, ,&nbsp;Yi Han,&nbsp;, ,&nbsp;Kai Liu,&nbsp;, ,&nbsp;Zengqin Song,&nbsp;, ,&nbsp;Yang Wang,&nbsp;, ,&nbsp;Xiaoyan Yan,&nbsp;, ,&nbsp;Zhikun Liu*,&nbsp;, and ,&nbsp;Mingzhen Zhao*,&nbsp;","doi":"10.1021/acsaelm.5c01400","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01400","url":null,"abstract":"<p >Monolayer molybdenum disulfide (MoS₂) is a promising candidate for flexible electronics, but its electron mobility on polymer substrates is typically constrained to below 10 cm² V^–1 s^–1. To investigate this limitation, we fabricate top-gated monolayer MoS₂ field-effect transistor (FET) on a polyimide substrate with a SiO_<i>x</i> seed (SiO_<i>x</i> FET). Our electron transport model reveals that the localized charge trapping (LCT) effect is the primary mobility-limiting mechanism. The sources of LCT, structural defects in the monolayer MoS₂ and interfacial defects from the SiO_<i>x</i> seed layer, are systematically suppressed via a transfer optimization (TO) process and a vacuum annealing (VA) strategy, respectively. By combining TO with an optimized-VA strategy, the SiO_<i>x</i> FET (TO+VA) achieves a high mobility of 24.8 cm² V^–1 s^–1, demonstrating a significant mobility enhancement at low and high electron densities, compared to the untreated SiO_<i>x</i> FET. Crucially, the dominant mobility-limiting mechanism shifts from the LCT effect in the untreated SiO_<i>x</i> FET to Coulomb impurity scattering in the SiO_<i>x</i> FET (TO+VA). The fundamental study underscores a model-guided approach to systematically mitigate the LCT effect, enabling high-mobility monolayer MoS₂ devices on polymer substrates.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8571–8582"},"PeriodicalIF":4.7,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}