ACS Applied Electronic Materials最新文献

{"title":"Tuning the Photoresponse of Flexible and Wearable SnO2-Based UV Sensors Using the Piezo-Phototronic Effect","authors":"Rajesh Mandal*,&nbsp;Subhamay Pramanik,&nbsp;Probodh K Kuiri,&nbsp;Biswanath Mukherjee and Rajib Nath*,&nbsp;","doi":"10.1021/acsaelm.5c01396","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01396","url":null,"abstract":"<p >Piezo-phototronic devices based on wide bandgap oxide materials are extremely useful for wearable optoelectronic devices, as their optical and electrical characteristics can be easily tuned by external strain. Herein, we fabricated a flexible ultraviolet (UV) photodetector (PD) by depositing a thin film of SnO₂ nanoparticles onto a poly(ethylene terephthalate) (PET) substrate using a simple chemical coating method. The SnO₂ film demonstrated strong UV absorption at around 335 nm and good transparency (∼80%) in the visible region (400–800 nm). The PD device exhibited excellent strain-induced photoresponse modulation in the UV region (275 nm) with photo-to-dark current ratio of up to ∼1.01 × 10⁴ and a responsivity of 0.745 A/W at 1 V under a tensile strain of 9%. The device exhibited an excellent reversible and reproducible photoresponse following the number of bending operations (∼10³ times). The device’s response time remained unaffected by the applied external strain, ensuring its reliability for multiple operations. The observed modulation in the photoresponse is attributed to strain-induced modifications in the Schottky barrier height (−15 to 60 meV) at the Au/SnO₂ interface, which affected the width of the depletion region and enhanced charge carrier collection efficiency at the electrodes. The realization of strain-induced enhancement in the performance of UV photodetectors based on metal oxide optoelectronic devices through the piezo-phototronic effect is the primary objective of this work, paving the way for next-generation wearable oxide-based optoelectronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7924–7932"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the Thermal Stability and Mechanical Endurance of a Titanium-Doped Germanium Antimony Thin Film for Flexible Nonvolatile Memory Application","authors":"Yu Li,&nbsp;Weihua Wu*,&nbsp;Zhengquan Zhou,&nbsp;Zhichao Qi,&nbsp;Xinyu Wang,&nbsp;Li Li and Jiwei Zhai*,&nbsp;","doi":"10.1021/acsaelm.5c01436","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01436","url":null,"abstract":"<p >The inherent limitations of silicon-based memory lie in rigid structural constraints and poor mechanical bendability, which have stimulated the growing research interest in exploring flexible memory technologies. We proposed the enhanced flexibility Ti-doped Ge₁Sb₉ phase-change materials, which were deposited on a polyimide substrate by the magnetron sputtering method. The thermal stability, mechanical bendability, surface morphology, and electrical properties of the Ti-doped Ge₁Sb₉ materials were systematically investigated. Compared with the pure Ge₁Sb₉, Ti-doped Ge₁Sb₉ films possess superior thermal stability and mechanical bendability. The film resistance remains almost unchanged after multiple bending cycles, indicating the excellent robust self-healing characteristic. This may be due to the more uniform stress distribution within the material, inhibiting the permanent structural damage and maintains resistance stability. Flexible phase-change memory devices based on Ti_0.05(Ge₁Sb₉)_0.95 films were fabricated, which can complete the reliable SET/RESET operations in both flat and bending states. All the results confirm the potential of the Ti-doped Ge₁Sb₉ film for flexible memory application, featuring the outstanding thermal stability, remarkable mechanical robustness, stable electrical switching, and low power consumption.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7940–7950"},"PeriodicalIF":4.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization and Validation of the Thermochromic Performance of a Trilayer Coating of TiO2/VO2/TiO2 for Smart Windows","authors":"Martin Becker*,&nbsp;Yan Ravil Wollenweber-Bienerth,&nbsp;Saskia Hartmann,&nbsp;Angelika Polity,&nbsp;Sangam Chatterjee and Peter J. Klar,&nbsp;","doi":"10.1021/acsaelm.5c01043","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01043","url":null,"abstract":"<p >Global energy consumption and the imperative to mitigate climate change have driven the exploration of innovative technologies to enhance energy efficiency in buildings. Among these, smart windows utilizing thermochromic vanadium dioxide-based materials as active materials have emerged as a promising avenue. These windows dynamically modulate their optical properties in response to environmental conditions, helping to reduce the energy consumption for heating/cooling of the building. However, the practical implementation of VO₂-based smart windows faces challenges related to optimizing their performance and durability. In this context, this review advocates for further research into VO₂-based smart windows incorporating titanium dioxide (TiO₂) buffer layers and TiO₂ antireflection (AR) coatings. Rutile TiO₂ buffer layers are used to promote growth of the VO₂ functional films. Additionally, TiO₂ antireflection coatings can improve the optical performance of smart windows by minimizing reflections and maximizing light transmission. This work highlights how TiO₂-based layers may be used to form a multilayer system surrounding the active VO₂ layer in order to enhance the efficiency of VO₂-based smart windows. The proposed application of rutile TiO₂ buffer layers and anatase TiO₂ AR layers holds promise for advancing the development of energy-efficient building technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7668–7678"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01043","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate-Tunable Resistive Switching and Negative Differential Resistance in Monolayer MoS2 for Neuromorphic Computing","authors":"Jian Yu,&nbsp;Mengyuan Duan,&nbsp;Guanghong Yang* and Caihong Jia*,&nbsp;","doi":"10.1021/acsaelm.5c00439","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00439","url":null,"abstract":"<p >A monolayer MoS₂ memristor with bridge- and bisecting-domain boundaries (DBs) exhibits gate-tunable memristive behavior due to the influence of DBs on the migration kinetics of sulfur vacancy. With increasing the drain-to-source voltage bias, the rectification effect as well as the rectification ratio remain almost unchanged in bridge-DBs. However, for bisecting-DBs, an obvious bipolar resistive switching (RS) accompanying negative differential resistance (NDR) appears when the drain-to-source electric field strength is above 267 V/μm. Furthermore, a gating is effective in inducing bipolar RS and NDR in bisecting-DBs even at a lower drain-to-source electric field strength of 50 V/μm. The above behaviors can be fully understood by the generation and drift of sulfur vacancies coupled with electron trapping/detrapping. The RS and NDR in monolayer MoS₂ are analyzed in detail in a mechanism with a doubly ionized sulfur vacancy and further used for neuromorphic computing. Based on the highly linear conductance weight updates in the bisecting-DB memristor, an artificial neural network (ANN) was established with high recognition accuracies of 88.7% and 96% for the Fashion-MNIST and MNIST data sets, respectively. This lays a solid foundation for the application of two-dimensional (2D) materials in neuromorphic computing.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7553–7561"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polypyrrole-Coated Thermally Activated Carbon Cloth for High-Performing Solid-State Supercapacitors","authors":"Doebner Von Tumacder,&nbsp;Fika Fauzi,&nbsp;Afshin Dianatdar,&nbsp;Adrivit Mukherjee,&nbsp;Zuzana Morávková,&nbsp;Ranjita K. Bose* and Patrycja Bober*,&nbsp;","doi":"10.1021/acsaelm.5c01153","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01153","url":null,"abstract":"<p >Conducting polypyrrole (PPy) synthesized through oxidative chemical vapor deposition (oCVD) on thermally activated carbon cloth was utilized in producing a PPy-based electrode for high-performing supercapacitors. The PPy deposition time was varied at 30, 60, and 90 min, creating CPPy30, CPPy60, and CPPy90 active materials, and their electrochemical properties were studied. CPPy90 has the highest capacitance at 299.5 mF cm^–2 (1497.7 mF cm^–3) with its Raman spectra showing a high doping degree, which contributed to its good capacitive behavior. Symmetric (CPPy90//CPPy90) and asymmetric (AC//CPPy90) supercapacitors were fabricated as prototypes. CPPy90//CPPy90 exhibited a maximum capacitance of 46.0 mF cm^–2 (115.0 mF cm^–3) with an energy density of 4.1 mWh cm^–2 (1.0 mWh cm^–3) at a power density of 80 mW cm^–2 (20 mW cm^–3). The electrochemical capacitance of AC//CPPy90 was 168.2 mF cm^–2 (560.6 mF cm^–3) with an energy density of 15.0 mWh cm^–2 (5.0 mWh cm^–3) at 80 mW cm^–2 (26.7 mW cm^–3) power density. AC//CPPy90 has shown better energy storage performance than CPPy90//CPPy90. Therefore, in this study, the low impedance and high capacitance of oCVD-prepared CPPy90 have promoted the development of symmetric and asymmetric PPy-based supercapacitors with good electrochemical performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7811–7826"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01153","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible-Organic Semiconductor Devices for Targeted Neuron Stimulation and Cell Growth Enhancement","authors":"Elena Iusupovskaia*,&nbsp;Aleksandr Markov,&nbsp;Alexander Gerasimenko,&nbsp;Ulyana Kurilova,&nbsp;Irina Suetina,&nbsp;Marina Mezentseva,&nbsp;Andrey Galiastov,&nbsp;Aleksey Maksimkin and Dmitry Telyshev,&nbsp;","doi":"10.1021/acsaelm.5c00992","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00992","url":null,"abstract":"<p >Wireless stimulation is gaining prominence in modern medicine due to its enhanced safety and reduced invasiveness compared to conventional implantable devices. The development of photostimulation devices offers promising solutions for various neurostimulation applications ranging from peripheral nerve regeneration to retinal repair. To enable wireless implantable devices for localized stimulation, it is essential to develop flexible and biocompatible semiconductor devices that minimize mechanical damage to soft tissues. In this study, polyimide films were selected as the optimal substrate material, while phthalocyanine and <i>N</i>,<i>N</i>′-dimethyl perylenetetracarboxylic diimide (PTCDI) served as the semiconductor components of the photostimulation device. Effectiveness of the devices was validated through <i>in vitro</i> experiments using mouse neuroblastoma (Neuro-2A) and ferret brain (Mpf) cell cultures. Experimental results demonstrated a 1.5- to 2.6-fold increase in cell population density following stimulation compared with reference values. These findings confirm that flexible organic semiconductor-based stimulation devices effectively influence cellular behavior. Successful outcomes of this study support the readiness of this technology for further <i>in vivo</i> investigations, paving the way for potential clinical applications in neuroregeneration and bioelectronic medicine.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7640–7650"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezoelectric Response and Energy Harvesting Capability in a Moldable PVA/PANi Composite Prepared via Frozen-Gel Polymerization","authors":"Andrei Honciuc*,&nbsp;Mirela Honciuc and Ana-Maria Solonaru,&nbsp;","doi":"10.1021/acsaelm.5c01140","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01140","url":null,"abstract":"<p >We report a soft, moldable composite based on poly(vinyl alcohol) (PVA) and in situ polymerized polyaniline (PANi), synthesized via a frozen-gel polymerization approach that enables uniform PANi distribution within a hydrogel matrix without thermal processing or mechanical alignment. After drying, the resulting rubbery organic mixed ionic–electronic conductor (OMIEC) exhibits piezoelectric-like behavior under compressive deformation and strain-dependent electrical characteristics suitable for sensing and energy harvesting applications. Mechanical testing revealed compressive and tensile Young’s moduli of ∼0.69 and ∼0.89 MPa, respectively, with high stretchability and viscoelastic hysteresis. Under repeated compressive strain, the composite generated open-circuit voltages up to 0.2 mV/mm and short-circuit current densities of 0.22 μA/mm², scaling proportionally with strain. Differential resistance analysis and relaxation studies indicated nonohmic behavior, ionic accumulation, and space-charge effects across the metal/polymer interfaces. The material also demonstrated a piezoresistive gauge factor of ∼1.8, with conductivity decreasing predictably under elongation. Power generation studies showed a maximum output of ∼7 nW/cm³ at 1 kΩ resistive load, closely matching theoretical estimates. The composite was integrated into a simple harvesting circuit, successfully charging a 100 μF capacitor and lighting an LED via repeated mechanical input. The results highlight a different class of piezoelectric-like materials derived from maturated hydrogels, offering the potential for soft, biocompatible, and easily processable alternatives to conventional piezoelectric systems. The material’s combined electromechanical response, ease of fabrication, and deformability make it suitable for wearable electronics, soft robotics, and self-powered sensing platforms.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7776–7790"},"PeriodicalIF":4.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"0D/1D Coupled CoFe@CNTs Nanocomposite Derived from ZIF-67 with Synergistic Polarization and Conductive Loss toward Highly Effective Microwave Attenuation Performance","authors":"Jing Zhang,&nbsp;Zhi Song,&nbsp;Yao Wei,&nbsp;Xiaoyu Li,&nbsp;Xingyao Li,&nbsp;Yu Hua,&nbsp;Qingguo Ren,&nbsp;Xiaolin Lan,&nbsp;Yi Hou* and Lixi Wang*,&nbsp;","doi":"10.1021/acsaelm.5c00945","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00945","url":null,"abstract":"<p >The development of high-performance microwave absorbers with strong absorption intensity, broad absorption bandwidth, and thin matching thickness remains a focal point in the field of electromagnetic (EM) attenuation materials. The synergistic design and construction of microstructures based on multiple polarization and loss mechanisms represent an effective approach to achieve this objective. Metal–organic frameworks (MOFs) inherently possess both magnetic and dielectric capabilities, making them excellent templates for high-performance microwave absorbers. However, single-component MOF-derived absorbers still suffer from insufficient absorption efficiency and a narrow effective bandwidth. Herein, a 0D/1D composite optimization strategy combining both component design and microstructure engineering is proposed to enhance EM attenuation in MOF-derived absorbers. The design features a cubic dual-phase CoFe alloy to serve as a magnetic loss framework. Meanwhile, the in situ grown CNTs endow the nanocomposite with substantial conductive loss, as well as the enhancement of interfacial polarization and dipole polarization. The resultant CoFe@CNTs nanocomposite achieves a minimal reflection loss of −49.63 dB at 16.88 GHz (1.5 mm thickness) and 6.32 GHz EAB at 1.71 mm. Compared to single-component Co nanoparticles, the superior absorption performance with lower RL, wider bandwidth, and thinner thickness makes the CoFe@CNTs nanocomposite an ideal highly effective EM absorption candidate.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7605–7615"},"PeriodicalIF":4.7,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable Triboelectric Nanogenerator from Bubble Wrap and Stainless Steel for Noninvasive Lung Health and Motion Monitoring","authors":"Nishat Kumar Das,&nbsp;Apeksha Reddy,&nbsp;Mavuri Sai Deepak and Sushmee Badhulika*,&nbsp;","doi":"10.1021/acsaelm.5c01075","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01075","url":null,"abstract":"<p >Breath monitoring serves as a crucial method for the early detection of chronic illnesses, highlighted by the COVID-19 pandemic, which demonstrates the necessity for accessible preventive healthcare technologies. This study presents a self-powered green triboelectric nanogenerator (G-TENG) system specifically designed for breath analysis that converts exhaled air into electrical signals. Addressing the dual challenges of sustainable energy solutions and waste management, the G-TENG utilizes commonly available discarded materials. The system incorporates a stainless-steel scrubber as the positively charged triboelectric layer and electrode, while discarded polyethylene bubble wrap serves as the negatively charged layer with copper functioning as the counter electrode. Characterization techniques, including scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR), confirm the properties of the employed waste materials such as the stainless steel scrubber and polyethylene bubble wrap. The device demonstrates an open-circuit voltage of approximately 40 V and an average short-circuit current of 0.467 μA under hand tapping for a device size of 7 cm × 7 cm. This research illustrates the innovative potential of recycling waste for breath monitoring and human motion applications. The G-TENG effectively measures exhaled air volume and monitors exhalation duration while exhibiting capabilities for tracking human motion such as footfalls and elbow movements. This work represents a significant advancement toward sustainable and preventive healthcare solutions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7697–7704"},"PeriodicalIF":4.7,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile Ethylvanillin Passivation for High-Performance CsFA Perovskite Solar Cells in Variable Lighting Environments","authors":"Sukhanidhan Singh,&nbsp;Chukwuebuka Emmanuel Usulor,&nbsp;Warunee Khampa,&nbsp;Wongsathon Musikpan,&nbsp;Woraprom Passatorntaschakorn,&nbsp;Pattanasak Tipparak,&nbsp;Chaowaphat Seriwattanachai,&nbsp;Hideki Nakajima,&nbsp;Athipong Ngamjarurojana,&nbsp;Atcharawon Gardchareon,&nbsp;Pongsakorn Kanjanaboos,&nbsp;Pipat Ruankham and Duangmanee Wongratanaphisan*,&nbsp;","doi":"10.1021/acsaelm.5c00956","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00956","url":null,"abstract":"<p >Carbon-based hybrid halide perovskite solar cells (C-PSCs) have emerged as one of the most attractive photovoltaics due to their exceptional performance and cost-effectiveness. However, defects in the perovskite photoactive layer, particularly undercoordinated Pb²⁺ and halide migration, lead to nonradiative recombination, limiting efficiency and stability. Herein, a simple, low-temperature, and cost-effective surface passivation method was employed to mitigate defects in the CsFA-based perovskite surface with 3-ethoxy-4-hydroxybenzaldehye (ethylvanillin: EVL). The –CHO and –OH groups in EVL effectively passivate Pb²⁺ defects and suppress I^– migration, as confirmed by X-ray photoelectron spectroscopy (XPS) and full-range infrared analysis, including mid-infrared region and far-infrared region FIR. This passivation significantly enhances the power conversion efficiency (PCE) of C-PSCs by 9.4% (13.03% to 14.26%) with Spiro-OMeTAD and 11.1% (10.14% to 11.26%) with CuSCN as a hole transporting layer (HTL) under 1 sun illumination and 0.09 cm² active area. Notably, CuSCN demonstrates a superior hole extraction with 4.1% <i>V</i>_oc and 6.5% fill factor gains. Furthermore, unencapsulated C-PSCs with Spiro-OMeTAD devices retain ∼91% of their initial PCE after 2160 h under the ISOS-D-1 protocol and 86% after 80 min under an ISOS-L-1 protocol, demonstrating exceptional stability and reproducibility with EVL at 7.5 mg/mL. Under low-intensity LED illumination (simulating indoor environments), EVL-passivated C-PSCs with Spiro-OMeTAD achieve remarkable PCEs of 28.12%, 28.05%, and 30.65% at 1000, 500, and 200 lx, respectively. These results highlight EVL-passivated C-PSCs as a cost-effective, stable, and high-efficiency solution for both outdoor and indoor photovoltaic applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 16","pages":"7616–7630"},"PeriodicalIF":4.7,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c00956","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144894661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}