ACS Applied Electronic Materials最新文献_第7页

Tetracene Single Crystal Heterostructured with a Distyrylbenzene Crystalline Layer to Enhance Field-Effect Mobility

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-26 DOI: 10.1021/acsaelm.4c0228110.1021/acsaelm.4c02281

Yang Zhao*, Mingmei Ge, Meiyu Yang, Xi Chen and Huan Wang*,

{"title":"Tetracene Single Crystal Heterostructured with a Distyrylbenzene Crystalline Layer to Enhance Field-Effect Mobility","authors":"Yang Zhao*, Mingmei Ge, Meiyu Yang, Xi Chen and Huan Wang*, ","doi":"10.1021/acsaelm.4c0228110.1021/acsaelm.4c02281","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02281https://doi.org/10.1021/acsaelm.4c02281","url":null,"abstract":"The performance of organic single-crystal-based field-effect transistors is commonly influenced by interface defects derived from the dielectric layer and crystal surfaces. In this study, a tetracene (Tc) single crystal heterostructured with a distyrylbenzene (DSB) crystalline layer (DSB/Tc) was successfully prepared by the physical vapor transport method. By using a lower HOMO level and higher LUMO level of DSB than those of Tc to keep the charge transport channel away from the dielectric layer surface, the charge carriers are effectively evitable to be trapped by interface defects. The hole and electron mobilities of the DSB/Tc crystal extracted from field-effect transistors could be up to 1.20 and 0.07 cm2/(V·s), which has around 2.0- and 9.7-times enhancement compared with the Tc single crystal, respectively. Our primary results demonstrate that the heterostructured construction of a crystalline layer with an energy level blocking effect on an organic single crystal can remarkably enhance the field-effect mobility, which sheds brilliant light on the development of high-performance optoelectronic organic crystals for application in organic field-effect transistors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2041–2047 2041–2047"},"PeriodicalIF":4.3,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ppb-Level Detection of a Formaldehyde Gas Sensor Based on the Honeycomb SnO2/SnSe2 Heterostructure

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-26 DOI: 10.1021/acsaelm.4c0233710.1021/acsaelm.4c02337

Qing Han, Xiaoxiao Sui, Gongao Jiao, Zuozhe Ding, Hao Zhang* and Dongzhi Zhang*,

{"title":"Ppb-Level Detection of a Formaldehyde Gas Sensor Based on the Honeycomb SnO2/SnSe2 Heterostructure","authors":"Qing Han, Xiaoxiao Sui, Gongao Jiao, Zuozhe Ding, Hao Zhang* and Dongzhi Zhang*, ","doi":"10.1021/acsaelm.4c0233710.1021/acsaelm.4c02337","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02337https://doi.org/10.1021/acsaelm.4c02337","url":null,"abstract":"In this work, a low-temperature formaldehyde sensor based on a hydrothermally synthesized tin dioxide/tin selenide (SnO2/SnSe2) nanostructure was demonstrated. The SnO2 nanosheets were decorated on the SnSe2 nanoblocks. The microstructural characterization proves this unique morphology. At 150 °C, the SnO2/SnSe2 composite gas sensor exhibits more than three times the response to formaldehyde gas compared to pure SnO2, with a response of 13.47 to 10 ppm formaldehyde and a response recovery time of 63 s/12 s. In addition, the SnO2/SnSe2 gas sensor is capable of detecting formaldehyde gas at the ppb level. The sensor also exhibits excellent repeatability, excellent long-term performance stability, and resistance to humidity interference. The n–n heterojunction formed between SnO2 and SnSe2, along with its unique microstructure, significantly enhances the performance of the SnO2/SnSe2 sensor. The adsorption behavior of formaldehyde molecules on sensitive material surfaces was studied by using density functional theory.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2084–2092 2084–2092"},"PeriodicalIF":4.3,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic Proximity-Induced Colossal Valley Splitting in WTe2 for Room Temperature Valleytronics

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-25 DOI: 10.1021/acsaelm.4c0227610.1021/acsaelm.4c02276

Ahsiur Rahman Nirjhar, and , Saquib Ahmed*,

{"title":"Magnetic Proximity-Induced Colossal Valley Splitting in WTe2 for Room Temperature Valleytronics","authors":"Ahsiur Rahman Nirjhar,  and , Saquib Ahmed*, ","doi":"10.1021/acsaelm.4c0227610.1021/acsaelm.4c02276","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02276https://doi.org/10.1021/acsaelm.4c02276","url":null,"abstract":"Valleytronics, a burgeoning field of information technology, offers exciting possibilities for future information storage and computing. However, fully realizing its potential hinges on overcoming the inherent valley degeneracy in valleytronic materials. This study explores the possibility of lifting valley degeneracy in monolayer 2H-WTe2 by using MnSe2, a room-temperature ferromagnet, as a substrate. First-principles calculations show that a significant valley splitting of 236 meV can be achieved in the WTe2/MnSe2 heterostructure. This high level of splitting is attributed to the short-range magnetic proximity effect, mediated by interfacial orbital hybridization due to spatial charge redistribution and manifested by the induced magnetic moment on the W atom. The Berry curvature calculation confirms the broken time-reversal symmetry responsible for lifting the valley degeneracy, and the valley splitting can be further enhanced by modulating the interlayer distance. The Curie temperature of the MnSe2 substrate is estimated to reach 457.57 K with 6% biaxial tensile strain, with the valley splitting retaining a value of 191 meV at this strain. The heterostructure also exhibits suitable band alignment for valley-polarized carrier transport and realization of the anomalous valley Hall effect, where the valley and spin indices of the carriers can be controlled by switching the magnetization direction of the MnSe2 substrate. These phenomena, along with the strain tolerance of valley splitting, present a promising path toward room-temperature valleytronics, potentially revolutionizing future information technologies.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2012–2021 2012–2021"},"PeriodicalIF":4.3,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Sensitive Humidity Sensor Based on NaCl-BiFeO3 for Noncontact Sensing

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-25 DOI: 10.1021/acsaelm.4c0213110.1021/acsaelm.4c02131

Jifeng Pan, Yunsong Li, Tian Tian, Zilong Tang, Zichao Lian* and Nan Ma*,

{"title":"Highly Sensitive Humidity Sensor Based on NaCl-BiFeO3 for Noncontact Sensing","authors":"Jifeng Pan, Yunsong Li, Tian Tian, Zilong Tang, Zichao Lian* and Nan Ma*, ","doi":"10.1021/acsaelm.4c0213110.1021/acsaelm.4c02131","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02131https://doi.org/10.1021/acsaelm.4c02131","url":null,"abstract":"The development of advanced humidity sensors is becoming increasingly essential for the progression of various industries, particularly for integration with IoT devices. Consequently, the creation of high-performance humidity sensors is of paramount importance. In this study, we present a highly sensitive humidity sensor based on the ferroelectric oxide BiFeO3, which is further enhanced by the incorporation of the hydrophilic inorganic salt NaCl. By optimizing the NaCl content and the thickness of the sensing film, the 15 wt % NaCl-BiFeO3 sensor with a film thickness of 68 μm demonstrated an exceptional response of 10,073 as the relative humidity was varied from 13 to 86% RH at room temperature, representing a 46.3-fold enhancement compared to pure BiFeO3-based sensors. The sensor also exhibited rapid response and recovery times of 0.27 and 5.73 s, respectively. The excellent humidity sensing performance can be attributed to the increased electrical conductivity, which results from the generation of free ions due to NaCl dissolution in adsorbed water under high humidity conditions. Furthermore, this highly sensitive sensor is well-suited for noncontact applications, such as human respiratory monitoring and contactless control. This work underscores the potential of NaCl-BiFeO3 as a highly promising material system for high-performance humidity sensors in smart sensing applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1842–1851 1842–1851"},"PeriodicalIF":4.3,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Superior High-Temperature Energy Storage Performance of Poly(ether imide) Capacitive Films by Incorporating Core–Shell Structured BN@MgO Fillers

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-24 DOI: 10.1021/acsaelm.5c0001010.1021/acsaelm.5c00010

Tiandong Zhang, Ziqi Jin, Hua Li, Zhaotong Meng*, Yue Zhang, Yongquan Zhang, Changhai Zhang, Qingguo Chi and Mengjia Feng,

{"title":"Superior High-Temperature Energy Storage Performance of Poly(ether imide) Capacitive Films by Incorporating Core–Shell Structured BN@MgO Fillers","authors":"Tiandong Zhang, Ziqi Jin, Hua Li, Zhaotong Meng*, Yue Zhang, Yongquan Zhang, Changhai Zhang, Qingguo Chi and Mengjia Feng, ","doi":"10.1021/acsaelm.5c0001010.1021/acsaelm.5c00010","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00010https://doi.org/10.1021/acsaelm.5c00010","url":null,"abstract":"Dielectric capacitors are widely used in electrical engineering due to their excellent insulation, high safety, and high power density. However, under high-temperature conditions, injected electric charges from metal electrodes, along with thermally generated charges, lead to a rapid increase in leakage current and severe degradation of insulation performance in polymer capacitive films, limiting long-term and stable operation. To address this issue, core–shell structured BN@MgO inorganic fillers were prepared using the magnetron sputtering method, with MgO as the core and BN as the shell. Results demonstrate that BN@MgO fillers significantly reduce conduction loss in poly(ether imide) (PEI) films by forming charge traps at interfacial regions between the fillers and the PEI matrix. The built-in electric field between BN and MgO efficiently captures mobile charges, enhancing the electrical insulation properties at elevated temperatures. Optimizing the doping content and BN shell thickness leads to a discharge energy density of 3.9 J/cm3 at 150 °C, with a charge/discharge efficiency of 90% for PEI/[email protected](2.5h) composite films. Additionally, excellent cyclic reliability and performance are maintained after 50,000 charge/discharge cycles. The study presents an efficient method for constructing core–shell BN@MgO fillers and clarifies mechanisms for restricting charge mobility.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2102–2110 2102–2110"},"PeriodicalIF":4.3,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth of Large-Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-24 DOI: 10.1021/acsaelm.4c0221410.1021/acsaelm.4c02214

Kajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati, Dhiman Mallick and Samaresh Das*,

{"title":"Growth of Large-Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration","authors":"Kajal Sharma, Abir Mukherjee, Kritika Bhattacharya, Biswarup Satpati, Dhiman Mallick and Samaresh Das*, ","doi":"10.1021/acsaelm.4c0221410.1021/acsaelm.4c02214","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02214https://doi.org/10.1021/acsaelm.4c02214","url":null,"abstract":"Here, we report a full-fledged journey toward the material synthesis and characterization of a few-layered/thin WSe2 using sputtered W-films on SiO2/Si substrates followed by electrical studies under dark and illumination conditions. A growth temperature of 500 °C and a gas flow rate of 55 sccm are found to be the optimized parameters for the formation of thermodynamically stable WSe2 with a dominant Raman peak at 265 cm–1. XRD and HR-TEM measurements clarify the formation of high crystallinity along the c-axis and quasi-crystallinity along the a and b axes, respectively. Lower intensities from Raman measurement and PL peak at 768 nm (with 532 nm excitation wavelength) infers the thin nature of the grown film. This work also retracks the controlled etching by reactive ions to achieve large-area bi/trilayer films to fabricate high-performance devices. An advanced dual MOS (DMOS) structure on the SiO2/p-Si substrate is fabricated, which shows tremendous performance by means of photocapacitance under illumination condition where photocarriers can survive the higher probe frequencies. Under illumination conditions, the DMOS device demonstrates superior performance, exhibiting a significantly strong electron-inversion region compared to that of HfO2/SiO2/p-Si and SiO2/p-Si MOS devices, even at high frequencies (1–10 MHz). This work thus presents a potential approach for capacitance-based, highly sensitive photodetection within conventional Si technology enabled by integrating WSe2/W as the active material.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1921–1932 1921–1932"},"PeriodicalIF":4.3,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perovskite/Organic Hybrid White Light-Emitting Diodes with Excellent CIE Chromaticity Coordinate

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-24 DOI: 10.1021/acsaelm.4c0228510.1021/acsaelm.4c02285

Yan Bao, Dandan Li, Run Wang, Zhixin Dai, Jinjiang Wang, Zili Chen, Yanhong Deng* and Hengyang Xiang*,

{"title":"Perovskite/Organic Hybrid White Light-Emitting Diodes with Excellent CIE Chromaticity Coordinate","authors":"Yan Bao, Dandan Li, Run Wang, Zhixin Dai, Jinjiang Wang, Zili Chen, Yanhong Deng* and Hengyang Xiang*, ","doi":"10.1021/acsaelm.4c0228510.1021/acsaelm.4c02285","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02285https://doi.org/10.1021/acsaelm.4c02285","url":null,"abstract":"Perovskite light-emitting diodes (PeLEDs) have great potential in solid-state lighting and display fields due to their advantages of narrow emission spectrum, excellent optoelectronic properties, simple preparation process, and low cost. However, the compatibility of solvents used in the full solution process substantially hindered the development of multilayer white PeLEDs. Although mixing perovskite and organic materials can avoid this problem, it remains challenging to manufacture white PeLEDs that are close to the Commission Internationale de L’Eclairage (CIE) coordinate of (0.33,0.33). In this paper, the perovskite/organic hybrid white light-emitting diodes composed of a bottom blue perovskite light-emitting unit prepared through a solution method and an organic light-emitting unit fabricated by thermal evaporation are reported. To enhance carrier transport and adjust the recombination region, we employed several strategies: improving the perovskite surface with phenylethylammonium bromide additive, optimizing the thickness of the organic red emission layer, inserting a lithium fluoride layer, and incorporating a blue supplementary emission layer. The best white PeLED shows a maximum luminance of 2281 cd/m2, a maximum external quantum efficiency of 2.64%, a CIE coordinate close to the equal-energy white point of (0.33,0.34), and a correlated color temperature of 5206 K. The results presented in this paper provide a feasible method for obtaining white PeLEDs with excellent CIE coordinates.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2031–2040 2031–2040"},"PeriodicalIF":4.3,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Salt-Templated Epitaxy and Transfer of Single-Crystal 2D Bi2O2Se Nanosheets for High-Performance Broadband Photodetectors

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-24 DOI: 10.1021/acsaelm.4c0214410.1021/acsaelm.4c02144

Haoxiang Tian, Yuchen Tian, Yujian Wang, Gaofeng Rao*, Liping Dai, Mingjie Wang, Tongwei Wu, Yuqing Liu, Jun Yang, Yingmin Wang, Xianfu Wang and Jianwen Huang*,

{"title":"Salt-Templated Epitaxy and Transfer of Single-Crystal 2D Bi2O2Se Nanosheets for High-Performance Broadband Photodetectors","authors":"Haoxiang Tian, Yuchen Tian, Yujian Wang, Gaofeng Rao*, Liping Dai, Mingjie Wang, Tongwei Wu, Yuqing Liu, Jun Yang, Yingmin Wang, Xianfu Wang and Jianwen Huang*, ","doi":"10.1021/acsaelm.4c0214410.1021/acsaelm.4c02144","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02144https://doi.org/10.1021/acsaelm.4c02144","url":null,"abstract":"The integration of high-mobility and band gap-tunable two-dimensional (2D) materials with silicon technology is widely considered a pressing challenge for next-generation high-density electronics. However, 2D materials can be grown on only limited archetypal substrates by chemical vapor deposition, which usually produces cracks, contamination, and wrinkles during the transfer process, leading to electronic performance attenuation. The advance of a damage-free transfer approach to seamlessly combine 2D atomic layers with arbitrary substrates is essential for making full use of their intrinsic merits and critical for lab-to-fab transition. Here, self-sacrifice and water-soluble substrates are present for the epitaxy growth and low-damage transfer of 2D bismuth oxyselenide (Bi2O2Se) nanosheets. The as-synthesized Bi2O2Se nanosheets can be transferred to other substrates without introducing extra etching damage. Consequently, the Bi2O2Se nanosheets exhibit a high intrinsic electrical mobility of 501.5 cm2·V–1·S–1, a wide-range (405–1550 nm) photoelectrical response with a responsivity of 9.2 × 106 A/W, and a detectivity of 2.9 × 1015 Jones under 808 nm irradiation. This study paves the way for the low-defect transfer of large-area epitaxial 2D materials, addressing the integration problems between high-quality 2D materials and silicon technology.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1852–1861 1852–1861"},"PeriodicalIF":4.3,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bionic Muscle with Dual-Mode Sensing Function Inspired by Plant Tendrils

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-23 DOI: 10.1021/acsaelm.5c0010510.1021/acsaelm.5c00105

Boyi Xu, Jinsui Xu, Yuanwu Feng, Ziyao Zhang, Qiaosong Fan, Jiaqiao Liang, Feihu Song, Fei Yang* and Yitong Zhou*,

{"title":"Bionic Muscle with Dual-Mode Sensing Function Inspired by Plant Tendrils","authors":"Boyi Xu, Jinsui Xu, Yuanwu Feng, Ziyao Zhang, Qiaosong Fan, Jiaqiao Liang, Feihu Song, Fei Yang* and Yitong Zhou*, ","doi":"10.1021/acsaelm.5c0010510.1021/acsaelm.5c00105","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00105https://doi.org/10.1021/acsaelm.5c00105","url":null,"abstract":"In the fields of intelligent sensing and actuation, the development of bioinspired systems integrating multimodal sensing and high-performance actuation has been a significant challenge. Inspired by the sensory and actuation properties of plant tendrils, this study presents a novel bioinspired artificial muscle system that combines temperature and strain dual-modal sensing functions while exhibiting exceptional actuation performance. The temperature-sensing module is designed based on a combination of magnetic fiber pile and polyvinylidene difluoride ion gel, demonstrating high-sensitivity and excellent linear response, enabling precise detection of environmental temperature variations. The strain-sensing module utilizes a combination of liquid metal and a confinement layer to achieve linear strain detection within a 0–80% strain range, with a sensitivity of 0.01761 and a fitting degree of 0.99601. In terms of actuation performance, the bioinspired artificial muscle generates a maximum output force of 1.75 N under an air pressure of 80 kPa and is capable of driving a bioinspired robotic arm for precise motion control. Furthermore, the system holds great potential for applications in smart agriculture, successfully realizing temperature-sensing-based intelligent regulation of a sunshade umbrella’s opening and closing, thereby providing environmental protection for plants. This research overcomes the limitations of traditional sensors and artificial muscle systems in terms of sensitivity, integration, and durability, offering an innovative solution for flexible robotics and smart agriculture, while also providing valuable insights for the design of future multimodal bioinspired systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2137–2145 2137–2145"},"PeriodicalIF":4.3,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polymer Optoelectronic Synapse with Tunable Negative Photoconductance Memory for Sequential Signal Processing

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-02-21 DOI: 10.1021/acsaelm.4c0224110.1021/acsaelm.4c02241

Zhaohui Yang, Dengshun Gu, Bochang Zhang, Ping Li, Bai Sun, Changrong Liao, Yue Zhou, Jia Yan, Xiaofang Hu, Lidan Wang*, Shukai Duan* and Guangdong Zhou*,

{"title":"Polymer Optoelectronic Synapse with Tunable Negative Photoconductance Memory for Sequential Signal Processing","authors":"Zhaohui Yang, Dengshun Gu, Bochang Zhang, Ping Li, Bai Sun, Changrong Liao, Yue Zhou, Jia Yan, Xiaofang Hu, Lidan Wang*, Shukai Duan* and Guangdong Zhou*, ","doi":"10.1021/acsaelm.4c0224110.1021/acsaelm.4c02241","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02241https://doi.org/10.1021/acsaelm.4c02241","url":null,"abstract":"With the development of artificial intelligence and neuromorphic computing, bioinspired computational models have gained widespread attention. This paper presents a light synapse device based on polyvinylidene fluoride (PVDF), which integrates the negative photoconductivity (NPC) effect and analog switching memory (ASM) effect within the same pixel. The NPC effect of this memristor enables high-performance short/long-term synaptic plasticity that can be modularly adjusted through optical pulse parameters. Under 405 nm laser illumination, the light synapse device exhibits a stable negative light response and achieves short-term depression (STD) and long-term depression (LTD). Furthermore, the device demonstrates excellent performance in simulating paired-pulse facilitation (PPF), pulse count dependence, pulse width dependence, and pulse height dependence. Additionally, we constructed a neuromorphic visual system with a memory computing architecture, which achieved an accuracy of 96.50% in handwritten digit pattern recognition, showcasing its immense potential in artificial intelligence and neuromorphic computing. This research provides an approach for developing efficient and flexible neuromorphic computing devices and lays the foundation for the design of future intelligent visual systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1966–1974 1966–1974"},"PeriodicalIF":4.3,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0