ACS Applied Electronic Materials最新文献

{"title":"Size-Dependent Electrical Transport in ZrSe3-Stripes","authors":"Davin Höllmann*,&nbsp;Lars Thole,&nbsp;Sonja Locmelis and Rolf J. Haug,&nbsp;","doi":"10.1021/acsaelm.5c0025110.1021/acsaelm.5c00251","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00251https://doi.org/10.1021/acsaelm.5c00251","url":null,"abstract":"<p >The anisotropy in the form of quasi one-dimensional (1D) chains in transition metal trichalcogenides (TMTCs) makes them stand out compared to other more conventional two-dimensional (2D) materials. Here, we experimentally investigated the electrical properties of stripes of the TMTC ZrSe₃, particularly in regard to their width and thickness. For this, we compared narrow samples with wider samples where both have a comparably similar length and thickness and found that the conductivity happens dominantly in the outer selenium atoms, i.e., across the chains, showcasing the in-plane electrical anisotropy of ZrSe₃. Comparing stripes of different thicknesses shows a drastic increase in band gap energy from 0.37 eV up to 0.63 eV for thinner samples.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4049–4054 4049–4054"},"PeriodicalIF":4.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00251","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evidence of Avalanche Multiplication in GeSeAs Ovonic Threshold Switch Selectors","authors":"Derek A. Stewart*,&nbsp;Jim W. Reiner,&nbsp;John C. Read and Michael K. Grobis,&nbsp;","doi":"10.1021/acsaelm.5c0037110.1021/acsaelm.5c00371","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00371https://doi.org/10.1021/acsaelm.5c00371","url":null,"abstract":"<p >The switching characteristics for Ge₁₀Se₅₄As₃₆ (GSA) ovonic threshold switch (OTS) selectors as a function of the OTS thickness were examined for various devices. We find that thicker GSA devices (20 and 30 nm) switch at lower effective electric fields compared to the 10 nm GSA device. In addition, the OFF state <i>I</i>–<i>V</i> curves for thicker GSA devices exhibit different functional regimes, indicating the presence of additional transport mechanisms. To explain this thickness dependence, we expand the lucky drift electron model for avalanche multiplication so that it can handle nanoscale thin films. Using this model, we show that avalanche multiplication is enhanced in thicker GSA OTS devices and this can explain the observed thickness dependence. This work provides unambiguous experimental evidence that avalanche breakdown plays a role in OTS switching.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4200–4209 4200–4209"},"PeriodicalIF":4.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"One Transistor−One Memristor Integrated Device Based on the Dual Conductive Filament Mechanism","authors":"Liang Zhao,&nbsp;Zhidong Pan,&nbsp;Yao Zhou,&nbsp;Tu Zhao,&nbsp;Xuming Wu and Nengjie Huo*,&nbsp;","doi":"10.1021/acsaelm.5c0026710.1021/acsaelm.5c00267","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00267https://doi.org/10.1021/acsaelm.5c00267","url":null,"abstract":"<p >The memristors based on the mechanisms of oxygen vacancies or metal ion conduction filament face numerous challenges in terms of cycling stability, power consumption, and high-density integration. To address these challenges, a one transistor−one memristor (1T1R) architecture has been proposed, enabling the integration of data storage and information processing functions. Here, we have designed a 1T1R device combining a WSe₂ transistor and an Al_<i>x</i>O_<i>y</i>/Ag memristor. The oxide Al_<i>x</i>O_<i>y</i> layer is grown by a thermal oxidation technique that facilitates the formation and disruption of a conductive filament via the synergistic effect of oxygen vacancies and Ag ions. Benefiting from the dual conductive filament mechanism, the device exhibits a low threshold voltage (∼0.82 V), high switching ratio (10⁵), and good retention characteristics (&gt;4000 s); it also demonstrates multilevel storage capability by the gate control on the WSe₂ transistor component. This work develops a dual conductive filament-based 1T1R device, offering a device concept for future in-memory computing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4095–4102 4095–4102"},"PeriodicalIF":4.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving Light Stability of Nonfullerene Acceptor Inverted Organic Solar Cell by Incorporating a Mixed Nanocomposite Metal Oxide Electron Transporting Layer.","authors":"Apostolos Ioakeimidis, Fedros Galatopoulos, Alina Hauser, Michael Rossier, Stelios A Choulis","doi":"10.1021/acsaelm.5c00201","DOIUrl":"10.1021/acsaelm.5c00201","url":null,"abstract":"<p><p>We present significant light stability enhancement of nonfullerene acceptor inverted organic photovoltaics by incorporating a mixed nanocomposite metal oxide electron transporting layer. Using an appropriate mixture of ZnO:SnO₂ nanoparticles as an electron transporting layer in a PBDB-TF-T1 (T1):IT4F based organic solar cell device mitigates light induced photodegradation by lowering the defect formation at the active layer interface. We propose that the mixed metal oxide ETL act as hole scavengers that reduces the photocatalytic reaction of its surface. The optimized nanocomposite mixture of ZnO:SnO₂ 10:90 (%V) provides higher light stability (ISOS-L2 protocol), prolonging the inverted OSCs lifetime (80% of the initial PCE, T80) by ∼16.5 times compared to the commonly used pristine ZnO electron transporting layer.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3940-3946"},"PeriodicalIF":4.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12080251/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144091977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid-Mode Triboelectric Nanogenerator Based on Cantilever Beam for Enhanced Droplet Energy Harvesting","authors":"Mengnan Qu*,&nbsp;Xiao Wei,&nbsp;Hui Liu,&nbsp;Yuan Deng,&nbsp;Ruizhe Zhang,&nbsp;Ziqi Liu,&nbsp;Menglin Zhu,&nbsp;Yuhang Gao,&nbsp;Mengge Cao and Jinmei He*,&nbsp;","doi":"10.1021/acsaelm.5c0048210.1021/acsaelm.5c00482","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00482https://doi.org/10.1021/acsaelm.5c00482","url":null,"abstract":"<p >Droplet triboelectric nanogenerator (D-TENG) offers a promising solution to harvest the low-frequency, low-actuation-force, and high-entropy droplet energy. Conventional attempts primarily focus on electrostatic energy collection at the liquid–solid interface, leaving the substantial kinetic energy from droplet impacts largely untapped, which restricts overall performance. In this work, utilizing fluorinated ethylene propylene (FEP) film as friction materials, we construct a hybrid-mode triboelectric nanogenerator based on cantilever beam structure that integrates a droplet triboelectric nanogenerator (D-TENG) with a freestanding triboelectric-layer mode (F-TENG), to synergistically capture both electrostatic and kinetic energy from droplet impacts (referred to as DF-TENG). Triggered by small droplets, the flexible cantilever beam, rather than conventional stiff ones, can easily vibrate multiple times with large amplitude, enabling frequency multiplication of F-TENG and producing amplified output charges. Hybrid-mode structures improve charge separation efficiency by utilizing droplet impact dynamics. The results show that the composite structure improves the charge output of the device by approximately 1.9 times and increases the charging speed by about 3 times. This study highlights the potential of DF-TENG for addressing key challenges in raindrop energy harvesting, advancing TENG technology toward scalable applications in self-powered systems and liquid energy collection.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4297–4306 4297–4306"},"PeriodicalIF":4.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics","authors":"Alessandro Paghi*,&nbsp;Laura Borgongino,&nbsp;Sebastiano Battisti,&nbsp;Simone Tortorella,&nbsp;Giacomo Trupiano,&nbsp;Giorgio De Simoni,&nbsp;Elia Strambini,&nbsp;Lucia Sorba and Francesco Giazotto,&nbsp;","doi":"10.1021/acsaelm.5c0003810.1021/acsaelm.5c00038","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00038https://doi.org/10.1021/acsaelm.5c00038","url":null,"abstract":"<p >InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson field effect transistors (JoFETs). The InAsOI consists of an InAs epilayer grown onto a cryogenic-electrically insulating InAlAs metamorphic buffer, which allows the electrical decoupling of surface-exposed adjacent devices together with a high critical current density integration. The miniaturization of Si microchips has progressed significantly due to the integration of high permittivity (high-<i>k</i>) gate insulators, allowing an increased gate coupling with the transistor channel with consequent reduced gate operating voltages and leakages. As well as for Si-based FETs, integrating high-<i>k</i> gate insulators with JoFETs promises similar advantages in superconducting electronics. Here, we investigate the gate-tunable electrical properties of InAsOI-based JoFETs featuring different high-<i>k</i> gate insulators, namely, HfO₂ and Al₂O₃. We found that both the ungated and gate-tunable electrical properties of JoFETs are strongly dependent on the insulator chosen. With both dielectrics, the JoFETs can entirely suppress the switching current and increase the normal-state resistance by 10–20 times using negative gate voltages. The HfO₂-JoFETs exhibit improved gate-tunable electrical performance compared to those achieved with Al₂O₃-JoFETs, which is related to the higher permittivity of the insulator. Gate-dependent electrical properties of InAsOI-based JoFETs were evaluated in the temperature range from 50 mK to 1 K. As expected, the switching current monotonically decreases with the increase in temperature, while the normal-state resistance remains unchanged until 1 K. Moreover, under the influence of an out-of-plane magnetic field, JoFETs exhibited an unconventional Fraunhofer diffraction pattern, from which an edge-peaked supercurrent density distribution was calculated. The origin of such anomalies is identified in the physics of the JJ edges, either with an increased current density or with a more accurate consideration of nonuniform flux focusing on the superconducting leads.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3756–3764 3756–3764"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergizing MAPbI3–xClx-Based Solar Cells with Columnar Mesogenic Interfacial Layers for Superior Efficiency","authors":"Asmita Shah,&nbsp;Saranrat Asamo,&nbsp;Pongthep Prajongtat*,&nbsp;Treerathat Chomchok,&nbsp;Nattaporn Chattham,&nbsp;Sandeep Kumar*,&nbsp;Rafik Naccache*,&nbsp;Abhishek Kumar Srivastava* and Dharmendra Pratap Singh*,&nbsp;","doi":"10.1021/acsaelm.5c0051710.1021/acsaelm.5c00517","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00517https://doi.org/10.1021/acsaelm.5c00517","url":null,"abstract":"<p >Perovskite solar cells (PSCs) face several challenges, particularly the recombination of charge carriers at the interface between the perovskite material and the hole transport layer. This recombination is primarily attributed to poor charge transport and injection, which reduce the open-circuit voltage, efficiency, and stability of PSCs. In this study, we investigate the effect of incorporating a triphenylene-based columnar mesogen, 2,3,6,7,10,11-hexabutyloxytriphenylene (HAT4), as an interfacial layer between MAPbI_3–<i>x</i>Cl_<i>x</i> and PEDOT:PSS to improve the performance of PSCs. The quasi-one-dimensional (1D) charge propagation of the columnar interfacial layer significantly improves the short-circuit current and open-circuit voltage of PSCs with an ITO/PEDOT:PSS/HAT4/MAPbI_3–<i>x</i>Cl_<i>x</i>/PCBM/BCP/Ag configuration. This enhancement is attributed to the reduced recombination of the charge carriers at the interface. The best device achieved a maximum efficiency of 12.23% compared to 10.57% for the reference device without the columnar mesogen layer. Additionally, simulation results corroborate the experimental findings, revealing optimized intermolecular interactions and charge transfer between MAPbI_3–<i>x</i>Cl_<i>x</i> and the columnar mesogens. These results highlight the potential of incorporating an interfacial columnar layer to improve the performance of the PSC. This approach can be used in state-of-the-art solar cell technology to enhance efficiency and wider viability close to commercialization.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4352–4362 4352–4362"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors","authors":"Anni Antola*,&nbsp;Johanna Laaksonen,&nbsp;Hannu Huhtinen,&nbsp;Ilari Angervo,&nbsp;Sari Granroth,&nbsp;Alejandro Schulman,&nbsp;Pekka Laukkanen and Petriina Paturi,&nbsp;","doi":"10.1021/acsaelm.5c0040310.1021/acsaelm.5c00403","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00403https://doi.org/10.1021/acsaelm.5c00403","url":null,"abstract":"<p >This study explores the area-dependent resistive switching (RS) characteristics of Gd_0.2Ca_0.8MnO₃ (GCMO)-based memristors with aluminum (Al) and gold (Au) electrodes, emphasizing their potential for neuromorphic computing applications. Using a combination of electrical measurements and X-ray photoelectron spectroscopy (XPS), we demonstrate that the high-resistance (HRS) and low-resistance (LRS) states exhibit predictable scaling with device area, with HRS resistances ranging from 10⁷ to 10⁸ Ω and LRS from 10⁵ to 10⁷ Ω, supporting the hypothesis of interface-type RS. XPS depth profiling revealed notable differences in AlO_<i>x</i> interfacial layer composition between HRS and LRS, with a higher oxide content and a widened interfacial region in HRS. Additionally, the multistate RS capability of up to ten distinct levels was achieved by modulating applied voltages, highlighting GCMO’s suitability as a material for synaptic weight storage in artificial neural networks. Our findings underscore GCMO’s promise for energy-efficient, scalable memristor-based systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4242–4250 4242–4250"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00403","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving Light Stability of Nonfullerene Acceptor Inverted Organic Solar Cell by Incorporating a Mixed Nanocomposite Metal Oxide Electron Transporting Layer","authors":"Apostolos Ioakeimidis*,&nbsp;Fedros Galatopoulos,&nbsp;Alina Hauser,&nbsp;Michael Rossier and Stelios A. Choulis*,&nbsp;","doi":"10.1021/acsaelm.5c0020110.1021/acsaelm.5c00201","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00201https://doi.org/10.1021/acsaelm.5c00201","url":null,"abstract":"<p >We present significant light stability enhancement of nonfullerene acceptor inverted organic photovoltaics by incorporating a mixed nanocomposite metal oxide electron transporting layer. Using an appropriate mixture of ZnO:SnO₂ nanoparticles as an electron transporting layer in a PBDB-TF-T1 (T1):IT4F based organic solar cell device mitigates light induced photodegradation by lowering the defect formation at the active layer interface. We propose that the mixed metal oxide ETL act as hole scavengers that reduces the photocatalytic reaction of its surface. The optimized nanocomposite mixture of ZnO:SnO₂ 10:90 (%V) provides higher light stability (ISOS-L2 protocol), prolonging the inverted OSCs lifetime (80% of the initial PCE, T80) by ∼16.5 times compared to the commonly used pristine ZnO electron transporting layer.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3940–3946 3940–3946"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00201","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Liquid Interference Mitigation in Capacitive Sensors Using Cassie–Baxter State Based on Superhydrophobic Surfaces","authors":"Yifei Xiao,&nbsp;Ziyi Dai*,&nbsp;Yu Wang,&nbsp;Zejian Yan,&nbsp;Yimeng Xu,&nbsp;Mingrui Wang*,&nbsp;Ming Lei,&nbsp;Qingmeng Zhang* and Kai Qian*,&nbsp;","doi":"10.1021/acsaelm.5c0045310.1021/acsaelm.5c00453","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00453https://doi.org/10.1021/acsaelm.5c00453","url":null,"abstract":"<p >Flexible capacitive sensors are essential for human-machine interaction and Industry 4.0, enabling applications from humanoid robotic skin to wearable healthcare devices. However, their accuracy is often compromised by liquid interference due to the stark dielectric contrast between air and water. This study presents a superhydrophobic modification of the dielectric layer via spray-coated surface-modified silica nanoparticles, achieving contact angles &gt;150° and rolling angles &lt;10°. The resulting Cassie–Baxter state enables both active (tilting-induced) and passive (compression-release) liquid removal mechanisms, effectively minimizing liquid-sensor contact. This approach demonstrates universal liquid resistance across diverse liquids, including beverages and corrosive solutions, and maintains stable performance under various humidity conditions. Using a dome-array structure as a demonstration, the modified sensor exhibits reliable pressure sensing performance with a detection range of 0–3 MPa and high sensitivity in the low-pressure region (3.601 × 10^–2 kPa^–1). The sensor maintains consistent performance over 1000 cycles under repeated liquid exposure, demonstrating excellent durability and reliability. The practical utility of this approach is demonstrated through a custom-designed Morse code recognition system that maintains reliable signal processing in liquid-rich environments, while the sensor’s broader applicability is validated through stable operation under harsh industrial conditions, including acid, alkali, and salt spray exposure.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4287–4296 4287–4296"},"PeriodicalIF":4.3,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}