ACS Applied Electronic Materials最新文献

{"title":"Enhanced Electrocaloric Performance in NaNbO3-Based Ferrodistortive Relaxors by Regulating Oxygen Octahedra Configuration and Domain Structure","authors":"Wenhao Wang,&nbsp;Wen He,&nbsp;Chunchang Wang,&nbsp;Feng Li","doi":"10.1021/acsaelm.6c01747","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01747","url":null,"abstract":"<p>As an alternative to traditional vapor-compression refrigeration, electrocaloric (EC) cooling features high efficiency, convenient miniaturization, and integration. The paradox of simultaneously realizing a high adiabatic temperature change (Δ<em>T</em>) and temperature stability is hardly resolved in conventional relaxors, thus hindering further applications. Emerging NaNbO₃-based ferrodistortive relaxors are poised to achieve the goal of the “best of both worlds”. In this work, (0.82 – <em>x</em>)NaNbO₃–0.18BaTiO₃–<em>x</em>BaSnO₃ (<em>x =</em> 0, 0.01, and 0.02) compositions are designed. Results demonstrate that BaSnO₃ doping effectively regulates the oxygen octahedral tilt (OOT) degree, improves lattice structural stability, and facilitates the transition of long-to-short order polar nanodomains. These are verified by micro/local structure characterizations of Rietveld refinements, transmission electron microscopy, and piezoelectric force microscopy. Such evolution establishes a robust OOT framework and highly correlated slush polar nanodomains. This endows <em>x</em> = 0.01 and 0.02 compositions with a maximal Δ<em>T</em> of 0.70/0.55 K at an electric field of 10 kV/mm and an ultrawide temperature span of 99/104 K, respectively, which is superior to most lead-based and lead-free counterparts. Notably, a comprehensive physical panorama of OOT configuration, domain structure, and EC performances is covered. This work provides a useful compositional extension for designing high-performance EC devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9127–9136"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering Hierarchical Porous Laser-Induced Graphene Enabled by Microsphere Soft-Templating for Dual-Mode Capacitive Pressure Sensing","authors":"Xingran Xu,&nbsp;Miao Tang,&nbsp;Zili Li,&nbsp;Shisheng Xiong","doi":"10.1021/acsaelm.6c01887","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01887","url":null,"abstract":"<p>Laser-induced graphene (LIG) has emerged as a promising platform for pressure sensing due to its good performance and facile laser-patterning capability. However, its performance is often constrained by limited porous microstructure tunability and low capacitive sensitivity. Herein, we develop a soft-template-assisted strategy for constructing hierarchical porous LIG by incorporating size-tunable polystyrene (PS) microspheres into a phenolic resin matrix. The photothermal effect simultaneously drives graphitization of the phenolic resin and decomposition of sacrificial PS templates, resulting in hierarchical porous graphene architectures. The controllability of the micropore size in LIG can be easily achieved by the PS microspheres. Thereafter, the resulting hierarchical porous LIG was used as an electrode to fabricate a capacitive pressure sensor. The sensor exhibits good capacitive response performance under static pressure and dynamic vibration conditions. This direct porous graphene synthesis provides a scalable route for engineering hierarchical porous graphene and offers insights into structure–property relationships for high-performance sensing applications in electronics and machine monitoring.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9171–9178"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149251347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetoelectric Composite Material Technologies for Autonomous Smart Systems: From Rigid to Flexible Structures","authors":"Miguel Algueró,&nbsp;Harvey Amorín,&nbsp;Alicia Castro,&nbsp;Pablo Ramos,&nbsp;Jesús Ricote,&nbsp;Adriana Barreto,&nbsp;Ricardo Jiménez,&nbsp;Iñigo Bretos,&nbsp;Cristina Pascual-González,&nbsp;María Lourdes Calzada","doi":"10.1021/acsaelm.6c01167","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01167","url":null,"abstract":"<p>Magnetoelectric composites are multifunctional materials capable of sensing magnetic and mechanical signals, actuation under magnetic and electric fields, and dual energy harvesting from stray magnetic fields and mechanical vibrations. They are thus reckoned as an enabling material technology for autonomous smart systems to be at the core of a range of applications, from nodes in wireless sensor networks to be massively deployed in the information society, to bioimplanted devices for medical diagnosis and therapeutics, wearable electronics and electronic skin in robotics. Large progress has been made during the last decades, and composite bulk laminate structures with outstanding response, in principle ready for the applications, have been demonstrated. Efforts now concentrate on ensuring reliability, mostly associated with preserving elastic coupling between components under operation, and on fabrication up-scaling and miniaturization, composite integration into microelectromechanical systems, and the fabrication of flexible structures. The spotlight summarizes and updates the authors' contributions to solve these challenges. On one hand, a number of advanced low-temperature processing techniques, either for bulk or thin-film configuration, have been demonstrated for the preparation of rigid and flexible layered structures with high-quality interfaces and sizeable magnetoelectric coefficients. Several high Curie-temperature, high-sensitivity piezoelectric perovskite BiMeO₃-PbTiO₃ systems (Me: Sc³⁺ or Fe³⁺) with very good down-scaling behavior of properties have been considered, combined with either magnetic spinel oxides or metals. On the other hand, insights into the causes that determine and limit response beyond component fraction and interface quality have been gained. Besides, preliminary results on the fabrication of flexible structures based on the piezoelectric biopolymer PLLA by 3D printing are presented. Responsible (green) electronics need to be developed within the framework of the circular economy.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8864–8881"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrode-Dependent Phase Stabilization and Polarization Response in Hafnium Zirconium Oxide Thin Films","authors":"Garrett Baucom,&nbsp;Jinghan Gao,&nbsp;Tamanna Shaown,&nbsp;Yijia Gu,&nbsp;Toshikazu Nishida,&nbsp;Roozbeh Tabrizian,&nbsp;Honggyu Kim","doi":"10.1021/acsaelm.6c01396","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01396","url":null,"abstract":"<p>Hafnium oxide-based ferroelectrics have emerged as a leading candidate for next-generation nonvolatile memory devices, yet the relationships between fabrication conditions and ferroelectric response remain poorly understood. The structural complexity of hafnium oxide and the constraints associated with nanoscale dimension and multilayer device geometry make conventional characterization methods unsuitable for resolving detailed microstructure characteristics. Here, we use four-dimensional scanning transmission electron microscopy to perform phase and orientation mapping and quantitatively examine the impact of electrode materials on the microstructure and remnant polarization of ferroelectric hafnium-zirconium oxide capacitors. We show that the observed remnant polarization is correlated with the polar phase fraction and alignment of the polar axis with respect to the growth direction. We also demonstrate that the interfacial oxide layer and the nonpolar polymorphs of hafnium oxide play a critical role in determining the ferroelectric polarization, as these structures give rise to depolarization fields.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9020–9030"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene/FeSiAl Composite Foam with Absorption-Dominant EMI Shielding via High Permeability of FeSiAl","authors":"Haofeng Ouyang,&nbsp;Zeyu Zheng,&nbsp;Yujun Wu,&nbsp;Yile Ye,&nbsp;Kuan Deng,&nbsp;Pengli Zhu,&nbsp;Kexin Fu,&nbsp;Yan-Jun Wan,&nbsp;Si-Yuan Liao","doi":"10.1021/acsaelm.6c01044","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01044","url":null,"abstract":"<p>The rapid development of high-frequency electronic devices urgently requires electromagnetic interference (EMI) shielding materials with both high shielding effectiveness (SE) and low reflectivity. However, achieving simultaneous high shielding and low reflectivity remains a significant challenge due to the inherent impedance mismatch. Herein, an asymmetric MXene/Flaky FeSiAl (FFSA)/expandable polymer microsphere (EPM) composite foam integrating metal soft magnetic material was constructed. Due to the particularly high permeability and low loss of FFSA, it can serve as an impedance-matching layer, allowing electromagnetic waves to enter the material with minimal surface reflection. Consequently, the composite foam delivers an EMI SE of 34.6 dB and a reflection coefficient as low as 0.03, maintaining broadband shielding above 31.9 dB across 5–27 GHz. Furthermore, the foam exhibits a near-field SE of approximately –40 dB in the 1–6 GHz band and effectively blocks wireless power transmission. This study provides a feasible strategy for developing low-reflection EMI shielding materials.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8925–8936"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149251341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sub-10 nm High-Performance P-Type Transistors Based on Two-Dimensional HfX2 (X = Cl, Br, I): A Density Functional Theory–Nonequilibrium Green’s Function Study","authors":"Yongzhen Yu,&nbsp;Tong Xu,&nbsp;Zihao Luo,&nbsp;Xinhao Yang,&nbsp;Huipu Wang,&nbsp;Yuanyuan Tai,&nbsp;Shuo Wang,&nbsp;Hengze Qu,&nbsp;Xiaoqin Shi,&nbsp;Wenhan Zhou,&nbsp;Shengli Zhang","doi":"10.1021/acsaelm.6c01541","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01541","url":null,"abstract":"<p>As conventional Moore’s Law approaches physical scaling limits, the semiconductor industry has entered the post-Moore era, and two-dimensional (2D) semiconductors have emerged as candidate channel materials. Meanwhile, the lack of high-performance (HP) p-type field-effect transistors (FETs) hinders the development of high-efficiency complementary circuits. In this work, we systematically investigate the electronic structures and ballistic transport properties of monolayer HfX₂ (X = Cl, Br, I) using first-principles calculations in combination with the nonequilibrium Green’s function (NEGF) method. The results show that 2D HfCl₂, HfBr₂, and HfI₂ are indirect-band-gap semiconductors with band gaps of 0.85–1.03 eV and exhibit isotropy in the hole effective mass: <em>m</em>₀ denotes the rest of a free electron. The hole effective mass is 0.30–0.38 <em>m</em>₀ along the <em>x</em> and <em>y</em> direction. When the channel length is 5 nm, HfCl₂, HfBr₂, and HfI₂ MOSFETs yield ballistic-performance upper-limit on-state currents <em>I</em>_on of 1197, 1087, and 1111 μA/μm, respectively. Moreover, HfI₂ FETs with channel lengths ranging from 5 to 9 nm all meet the high-performance device requirements defined by the International Technology Roadmap for Semiconductors (ITRS). The comprehensive material performance demonstrates that monolayer HfX₂ are promising p-type channel materials for next-generation high-speed and low-power 2D FETs.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9073–9080"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-Resolved Electrical Transport Response of ZrOxNy Thin Films under Alternating Electrical Perturbation","authors":"Souradeep Mitra,&nbsp;Soumen Samanta,&nbsp;Sudip Mukherjee,&nbsp;Shovit Bhattacharya","doi":"10.1021/acsaelm.6c01234","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01234","url":null,"abstract":"<p>Cryogenic thermometry based on DC resistance measurements in polycrystalline thin films can be influenced by extrinsic grain-boundary contributions, limiting reproducibility and interchangeability. Here, we investigate zirconium oxynitride (ZrO<em>_x</em>N_<em>y</em>) thin films using temperature-dependent impedance spectroscopy under an alternating electrical perturbation at zero DC bias. The distribution of relaxation times analysis with Tikhonov regularization was employed to deconvolute the impedance response and distinguish the characteristic relaxation processes associated with bulk grains and grain boundaries. The extracted relaxation frequencies exhibit a smooth and monotonic dependence on temperature, providing a physical basis for their use as thermometric parameters. The bulk capacitance remains nearly temperature independent, while being tunable through deposition conditions. The relaxation dynamics are governed by quantum corrections associated with weak localization, with the observed dimensionality crossover correlated with the crystallite size. Films deposited on polycrystalline alumina additionally exhibit splitting of the bulk relaxation frequencies, consistent with contributions from different grain orientations. These results demonstrate the potential of bulk relaxation frequencies derived from impedance spectroscopy as physically meaningful parameters for impedance-based cryogenic thermometry and related instrumentation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8974–8985"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149251328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Oxidative Aging on the Performance of Colloidal Quantum Dot-Sintered PbSe Infrared Detectors","authors":"Ahmad A. Yaseer,&nbsp;Rakina Islam,&nbsp;Sunghwan Lee,&nbsp;Shaahin Angizi,&nbsp;Dong-Kyun Ko","doi":"10.1021/acsaelm.6c00807","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00807","url":null,"abstract":"<p>Semiconductor inks based on colloidal quantum dots (QDs) enable low-cost, scalable fabrication of thin-film devices through solution-based techniques such as inkjet and screen printing. While these approaches have been widely demonstrated for light-emitting pixel arrays in display technologies, they also offer significant potential for the fabrication of sensor arrays for imaging. This capability is particularly attractive for detectors operating at longer infrared wavelengths, a spectral region currently dominated by expensive epitaxially grown semiconductors. Here, we demonstrate this approach using solution-processed quantum dots to fabricate photoconductive films of polycrystalline lead selenide, an important semiconductor material that enables uncooled mid-infrared photodetection. We investigate the impact of oxidative aging of QDs, a previously overlooked process that significantly enhances the sensitivity of QD-sintered polycrystalline films. An optimal QD aging window is identified that maximizes device performance, yielding a room-temperature specific detectivity of 6.75 × 10⁹ Jones at a peak wavelength of 3.5 μm and a modulation frequency of 1 kHz, comparable to those of commercial detectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8909–8915"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Wide Linear Flexible Piezoresistive Sensor Based on CVD-Synthesized Monolayer MoS2 Film","authors":"Jin Ning,&nbsp;Shuheng Fan,&nbsp;Yuan Meng,&nbsp;Yuyan Zhou,&nbsp;Shurui Wang,&nbsp;Jingjing Luo,&nbsp;Suzhu Yu,&nbsp;Jun Wei","doi":"10.1021/acsaelm.6c01135","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01135","url":null,"abstract":"<p>Monolayer MoS₂ films exhibit the intrinsic piezoresistive effect, but existing composite MoS₂ piezoresistive sensors usually achieve high sensitivity at the cost of a narrow linear detection range, restricting their application in full-scale quantitative pressure monitoring. In this work, centimeter-scale monolayer MoS₂ films were grown by CVD, and a nondestructive PU/PMMA water-assisted transfer strategy was proposed to prepare flexible conductive substrates. A water-film packaging method was developed to reduce interfacial contact resistance, expanding the linear response range by 250% versus traditional packaging. Bumped PU packaging layers were further designed to concentrate surface stress, boosting sensitivity by 400% relative to flat structures. The fabricated 403 µm-thick pure monolayer MoS₂ sensor realizes a continuous linear response from 0.1 kPa to 200 kPa with a response time of 26 ms and stable signals over 5000 loading cycles. Though the sensor adopts intrinsic single-layer MoS₂ without composite conductive fillers and thus has moderate absolute sensitivity, it delivers reliable resolution for both micro airflow and high plantar pressure, showing great potential in multi-scale human motion and physiological signal monitoring.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"8961–8973"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-Side Sliding Triboelectric Nanogenerator with Configurable Series/Parallel Outputs for Wind-Energy Applications","authors":"Weiwei Fan,&nbsp;Hui Li,&nbsp;Beichen Lin,&nbsp;Yongqiang Tu,&nbsp;Chenglong Li,&nbsp;Xiaofu Ma,&nbsp;Jin Zhang","doi":"10.1021/acsaelm.6c01615","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01615","url":null,"abstract":"<p>To address the need for compact and adaptable energy harvesters for distributed self-powered electronics, we propose a multi-side sliding triboelectric nanogenerator (MS-TENG) for wind-energy applications. The prototype integrates a wind-oriented rotation-to-reciprocation mechanism with a multi-side triboelectric generation module. Multiple generator units are arranged around a common slider, increasing the number of active interfaces within a limited structural volume, while sharing the same transmission mechanism. The FEP film contacts the flexible rabbit-fur triboelectric layer, while the adjacent metal electrodes serve as non-contact induction electrodes and do not directly contact the FEP film. To isolate the intrinsic effects of structural parameters and electrical connection modes from aerodynamic fluctuations, quantitative electrical characterization was performed under controlled motor-driven reciprocating excitation. Under the controlled test conditions, four generator units connected in series produced an open-circuit voltage of 463.9 V and a maximum average output power of 99.23 μW at 200 MΩ, whereas parallel connection enhanced the short-circuit current and transferred charge. The MS-TENG also briefly activated a low-power electronic module using rectified and stored energy and continuously illuminated 124 LEDs. These results demonstrate that the MS-TENG integrates multiple generating interfaces and provides configurable electrical output and indicate its potential for wind-powered self-sustaining electronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 20","pages":"9093–9104"},"PeriodicalIF":4.7,"publicationDate":"2026-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149282076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}