ACS Applied Electronic Materials最新文献

{"title":"Optimized ALD-ZnO Thin Films for High-Performance 12 μm Pixel Microbolometers: Fabrication, Simulation, and Design Strategies for Infrared Sensing","authors":"Bhavya Padha,&nbsp;, ,&nbsp;Zahoor Ahmed,&nbsp;, ,&nbsp;Naresh Padha,&nbsp;, ,&nbsp;Dependra Singh Rawal,&nbsp;, ,&nbsp;Isha Yadav*,&nbsp;, and ,&nbsp;Sandeep Arya*,&nbsp;","doi":"10.1021/acsaelm.5c01235","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01235","url":null,"abstract":"<p >A zinc oxide (ZnO)-based microbolometer with a 12 μm pixel pitch was developed using atomic layer deposition (ALD) on silica (SiO₂/Si) substrates for infrared (IR) detection. ZnO offers a complementary metal-oxide semiconductor (CMOS)-compatible, thermally stable, low-cost alternative, unlike conventional bolometers. ZnO thin films were deposited via ALD on SiO₂/Si substrates at 120, 150, and 200 °C for 1200, 1500, and 1800 cycles, respectively, and analyzed using various characterization techniques. The optimized ZnO thin film exhibited a −12.9 %/K temperature coefficient of resistance (TCR). Pixel design of all the films were carried out. Thermal modeling revealed a thermal conductance of 1.21 × 10^–7 W/K and a time constant of 336 μs. The designed pixel achieved a responsivity of 1.10 × 10⁸ V/W, noise equivalent power (NEP) of 4.13 × 10^–14 W/√Hz, detectivity of 1.84 × 10¹⁴ cm·√Hz/W, and noise equivalent temperature difference (NETD) of 77.43 mK. These results demonstrate the potential of CMOS-compatible ALD-grown ZnO for high-performance microbolometric IR sensing.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8912–8925"},"PeriodicalIF":4.7,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile One-Pot Direct Arylation Synthesis of Crystalline Additive Molecules for High-Efficiency Organic Solar Cells","authors":"Ruoqi Song,&nbsp;, ,&nbsp;Jiayu Li,&nbsp;, ,&nbsp;Yuechen Li,&nbsp;, ,&nbsp;Minghui Wang,&nbsp;, ,&nbsp;Sergio Gámez-Valenzuela,&nbsp;, ,&nbsp;Hongxiang Li,&nbsp;, ,&nbsp;Jianfeng Li*,&nbsp;, ,&nbsp;Zicheng Ding,&nbsp;, ,&nbsp;Xiangzhe Li,&nbsp;, ,&nbsp;Sixing Xiong,&nbsp;, ,&nbsp;Kai Wang*,&nbsp;, ,&nbsp;Xiaochen Wang*,&nbsp;, ,&nbsp;Shengzhong Frank Liu,&nbsp;, and ,&nbsp;Yongfang Li,&nbsp;","doi":"10.1021/acsaelm.5c01486","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01486","url":null,"abstract":"<p >Crystalline molecules (CMs) demonstrate tremendous potential in regulating the active layer morphology of organic solar cells (OSCs) through robust intermolecular interactions and the formation of highly ordered crystalline domains. As additives, CMs can effectively balance the crystallinity differences between polymers and small molecular acceptors while precisely controlling molecular stacking and phase separation processes, thereby constructing efficient charge transport channels and enhancing power conversion efficiency (PCE). However, the synthesis of most CMs involves complex multistep procedures, which hinders their widespread application. Here, we developed a facile one-pot direct arylation methodology for synthesizing CMs for high-efficiency OSCs, by preparing three structurally simple CMs (2TBT, 3TBT, and 4TBT), where 3TBT and 4TBT exhibit enhanced crystallinity and possess liquid crystalline (LC) properties. Upon incorporating these additives into PM6:L8-BO-based nonfullerene OSCs, the LC additives 3TBT and 4TBT enabled precise regulation of the active layer’s crystallinity, phase separation, and microstructure, while the non-LC additive 2TBT showed minimal morphological influence, highlighting the unique role of LC in morphological regulation. The aforementioned favorable morphological evolution simultaneously enhanced exciton dissociation and collection while promoting charge transport, resulting in an improvement of the device’s PCE from 17.00 to 18.12%. This work not only provides a convenient synthetic pathway for CMs and demonstrates that CM additives can effectively regulate the active layer of OSCs, but also offers a practical strategy for developing high-performance OSCs by leveraging their unique properties.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9116–9126"},"PeriodicalIF":4.7,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compositionally Tuned Al–Mn–Ru Thin Films for Advancing Silicon Photoelectrodes in Light Harvesting and Electronic Conductivity","authors":"Xuelan Hou,&nbsp;, ,&nbsp;Sida Liu,&nbsp;, and ,&nbsp;Guidong Yang*,&nbsp;","doi":"10.1021/acsaelm.5c01555","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01555","url":null,"abstract":"<p >The advancement of silicon (Si)-based photoelectrodes for photoelectrochemical (PEC) energy conversion is no longer limited by surface catalytic activity, but rather by persistent challenges in suboptimal light harvesting and low electronic conductivity. Addressing these bottlenecks is crucial to unlock the full potential of Si-based systems for solar fuel applications. Here, we present a tunable strategy employing Al–Mn–Ru thin films conformally coated on Si wafers, where precise adjustment of the Al, Mn, and Ru atomic ratios enhances near-infrared light absorption and electrical conductivity. The resulting films demonstrate broad-spectrum light absorption from 250 to 1400 nm and achieve up to a two-order-of-magnitude reduction in ohmic resistance, indicating improved charge carrier transport properties. Structural and spectroscopic analyses reveal that compositional variations across the samples influence light harvesting and conductivity, while trends in surface potential and chromaticity illustrate the critical relationship between film composition and material properties. This work establishes a versatile platform for engineering Si-based materials with enhanced optoelectronic characteristics, paving the way for future development of high-performance PEC devices for solar fuel applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9159–9166"},"PeriodicalIF":4.7,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser Processing of Ti Contacts for Ohmic Behavior on P-Type 4H-SiC","authors":"Roberto Vabres,&nbsp;, ,&nbsp;Gabriele Bellocchi,&nbsp;, ,&nbsp;Corrado Bongiorno,&nbsp;, ,&nbsp;Marilena Vivona,&nbsp;, ,&nbsp;Fabrizio Roccaforte,&nbsp;, ,&nbsp;Paolo Badalà,&nbsp;, ,&nbsp;Paola Mancuso,&nbsp;, ,&nbsp;Valeria Puglisi,&nbsp;, ,&nbsp;Simone Rascunà,&nbsp;, and ,&nbsp;Isodiana Crupi*,&nbsp;","doi":"10.1021/acsaelm.5c01338","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01338","url":null,"abstract":"<p >This work explores a key challenge in power device fabrication: the formation of ohmic contacts on p-type 4H-silicon carbide (SiC). We demonstrate a selective, low thermal budget approach using single titanium (Ti) metallization combined with pulsed laser annealing (PLA), as an alternative to both metallic multilayer stacks and conventional high-temperature annealing. By applying PLA with fluences above 3.6 J/cm², Ti contacts exhibit linear current–voltage (<i>I</i>–<i>V</i>) behavior, indicating effective ohmic contact formation, with over 50% improvement in conduction observed at 3.8 J/cm². Cross-sectional transmission electron microscopy (TEM) and elemental mapping reveal that higher fluences promote deeper SiC consumption, and the formation of a continuous, epitaxially regrown SiC layer, bonded to a uniform titanium carbide (TiC) layer extended deeper into the p-doped region. This structure supports efficient charge transfer and strong interfacial bonding. Furthermore, increasing fluence drives the transient liquid phase composition from Ti-rich toward a more balanced Ti–Si–C composition, promoting the formation of ternary phases enriched in Si and C that enhance interfacial stability and electrical performance. This work demonstrates that PLA offers precise control over interfacial reactions and contact microstructures, offering a scalable, selective, and thermally efficient approach for ohmic contacts on p-type 4H-SiC, advancing the development of high-performance, next-generation SiC-based power electronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"9004–9011"},"PeriodicalIF":4.7,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01338","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ionic Conduction Mechanism in Two-Dimensional Layered Compound Na3Fe(PO4)2 with a Glaserite-like Crystal Structure","authors":"Bikash Chandra Saha,&nbsp;, ,&nbsp;Anup Kumar Bera*,&nbsp;, and ,&nbsp;Seikh Mohammad Yusuf*,&nbsp;","doi":"10.1021/acsaelm.5c01348","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01348","url":null,"abstract":"<p >We report the microscopic mechanism of Na-ion conduction and its relationship with the crystal structure of 2D layered electrode battery material Na₃Fe(PO₄)₂. Our X-ray and neutron diffraction studies reveal that Na₃Fe(PO₄)₂ has a layered crystal structure with alternating Na-ion and transition metal (Fe) oxide layers along the crystallographic <i>c-</i>axis. Using impedance spectroscopy, we investigate the detailed Na-ion conduction in Na₃Fe(PO₄)₂ through the analysis of various interlinked parameters, viz., dc conductivity, ac conductivity, diffusion constant, hopping time of ions, electrical modulus, dielectric constant, etc. Our findings indicate that Na-ion conductions occur through a correlated barrier hopping (CBH) process and are thermally and frequency activated. The temperature-dependent Arrhenius-type ionic conductivity is found to increase ∼ 10⁴ orders of magnitude from ∼ 10^–7 to ∼ 10^–3 Sm^–1 with increasing temperature from 450 to 773 K. The diffusion constant is found to be ∼ 1.24 × 10^–13 cm²/s at 553 K, which increases ∼ 10³ orders of magnitude and reaches 5 × 10^–10 cm²/s at 773 K. Both Na-ion hopping time and conductivity relaxation time have been found to decrease significantly with increasing temperature. Electrical modulus and dielectric study also confirm the CBH process as a microscopic mechanism for Na-ion conduction which remains invariant over the entire measured temperature range. The soft bond valence sum (BVS) analysis of the neutron diffraction pattern reveals that the 2D Na-ion conduction pathways are confined within the Na-ion layers. The relationship between the Na-ion conduction and the underlying crystal structural parameters, such as local environment of conducting Na ions, Na–Na distances, and Na-site occupancies, has been established. Our study, thus, provides valuable insight into the ionic conduction properties and their correlation with the underlying crystal structure, holding immense importance in the field of battery material research.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8978–8991"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stress-Assisted Networking Enabled Highly Conductive Liquid Metal-Based PVP-Fructose Gel with Multi-intelligent Properties for Stretchable Electronics","authors":"Menglong Ding,&nbsp;, ,&nbsp;Qingzhen Zhao,&nbsp;, ,&nbsp;Jianke Du*,&nbsp;, ,&nbsp;Minghua Zhang,&nbsp;, ,&nbsp;Aibing Zhang,&nbsp;, ,&nbsp;Yuan Jin,&nbsp;, ,&nbsp;Licheng Hua,&nbsp;, ,&nbsp;Changshun Huang*,&nbsp;, and ,&nbsp;Guangyong Li*,&nbsp;","doi":"10.1021/acsaelm.5c01553","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01553","url":null,"abstract":"<p >Conductive hydrogel materials are garnering attention for their high flexibility and biocompatibility, establishing them as promising candidates for use in wearable and stretchable electronics. Despite the high conductivity of many reported hydrogel materials, they generally lack intelligent properties such as degradability, stretchability, self-adhesion, and self-healing. This study proposes a stress-assisted conductive networking mechanism for liquid metal (LM)-based gel, which is attributed to the internal stress generated by volume shrinkage during the liquid–solid phase transition, and operates without the requirement of additional energy input. Based on this mechanism, LM particles are subsequently incorporated into a polyvinylpyrrolidone (PVP)-fructose composite (PFC) to fabricate a highly conductive LM-PFC gel. This gel not only achieves high conductivity but also demonstrates excellent intelligent properties, including high stretchability, degradability, high mechanical strength, self-adhesion, self-conforming ability, recyclability, and self-healing ability, which make it highly suitable for applications such as monitoring bioelectric signals, thereby highlighting its immense potential in stretchable electronics and wearable technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8646–8654"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Achieving Face-Selective Ohmic Contact to β-Ga2O3 via Anisotropic Trench Structure","authors":"Woong Choi,&nbsp;, ,&nbsp;Seungyun Lee,&nbsp;, ,&nbsp;Sanghyun Moon,&nbsp;, ,&nbsp;Kwang Hyeon Baik*,&nbsp;, and ,&nbsp;Jihyun Kim*,&nbsp;","doi":"10.1021/acsaelm.5c01474","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01474","url":null,"abstract":"<p >Achieving low contact resistance is crucial for fabricating high-performance electronic and optoelectronic devices. As beta-gallium oxide (β-Ga₂O₃) with a low-symmetry monoclinic structure exhibits anisotropic electronic properties, we investigated the anisotropic contact resistance of β-Ga₂O₃ by fabricating trench contact structures on six distinct crystallographic planes ((001), (100), (101), (102), (201), and (−201)) using photo-enhanced metal-assisted chemical etching on undoped (010)-oriented substrates. Trench contact structures enable contacts on distinct crystallographic planes, overcoming the restriction of contact formation to the grown surface. Transfer length method analysis revealed that trench contacts on the (−201) plane yielded the lowest contact resistance (0.23 kΩ·mm). The low atomic density and surface energy enhanced carrier injection at the interface owing to the lower phonon density and formation of a thinner Ti–TiO_<i>x</i> interfacial layer, respectively. Asymmetric self-powered ultraviolet–C photodetectors incorporating (−201) trench contacts exhibited superior optoelectronic performance, including a 3-fold increase in responsivity (13.17 mA·W^–1) with enhanced photo-to-dark current ratio (1.38 × 10⁴%), compared with that of surface-contacted devices (4.38 mA·W^–1, 7.57 × 10³%). This work highlights the importance of anisotropic properties in contact engineering and provides a pathway for optimizing β-Ga₂O₃ devices for next-generation power and photodetection technologies.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8618–8624"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/pdf/10.1021/acsaelm.5c01474","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring Efficient Methods for Boosting Capacitance in Graphene and Hybrid Graphene-Based Supercapacitors─A Review","authors":"Salma Sultana,&nbsp;, ,&nbsp;Mohammad Anwar Parvez*,&nbsp;, ,&nbsp;Nayan Ranjan Singha,&nbsp;, ,&nbsp;Mohammed Rehaan Chandan*,&nbsp;, and ,&nbsp;Mostafizur Rahaman*,&nbsp;","doi":"10.1021/acsaelm.5c01151","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01151","url":null,"abstract":"<p >The rapid evolution of energy storage technologies has highlighted supercapacitors as leading candidates due to their high-power density, fast charge–discharge rates, and long cycle life. Graphene, with its excellent conductivity and high surface area, offers strong potential as an electrode material; however, its limited intrinsic capacitance remains a challenge. This review explores recent strategies to enhance the electrochemical performance of graphene-based supercapacitors, focusing on hybridization with pseudocapacitive materials such as metal oxides, carbon nanotubes, MXenes, and conductive polymers. These hybrid systems improve ion transport, mitigate restacking, and contribute additional redox-active sites, collectively boosting energy and power densities. We also examine the role of pore architecture, heteroatom doping, and surface functionalization in optimizing charge storage. Special attention is given to advanced fabrication techniques, including hydrothermal synthesis, electrochemical deposition, and 3D printing, enabling efficient, porous electrode architectures. Finally, we address scalability, stability, and integration challenges for practical applications, and outline future directions for the commercialization of graphene-based supercapacitors in flexible, wearable, and high-energy systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 19","pages":"8732–8799"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145277597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing the Reliability of Bi2Te3-Based Thermoelectric Generators with Asymmetric Structures under Large Temperature Difference","authors":"Weiqiang Cao,&nbsp;, ,&nbsp;Jianan Lyu*,&nbsp;, ,&nbsp;Ziao Wang,&nbsp;, ,&nbsp;Bachir Melzi,&nbsp;, ,&nbsp;Yonggao Yan,&nbsp;, ,&nbsp;Dongwang Yang*,&nbsp;, and ,&nbsp;Xinfeng Tang*,&nbsp;","doi":"10.1021/acsaelm.5c01475","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01475","url":null,"abstract":"<p >The thermoelectric (TE) recovery technology for industrial waste heat is crucial for improving energy utilization efficiency. Currently, commercial Bi₂Te₃-based thermoelectric generators (TEGs) show significant reliability issues when operating under large temperature differences (<i>T</i>_h &gt; 200 °C, Δ<i>T</i> &gt; 150 °C). This is primarily due to the accumulation of interfacial thermal stress resulting from traditional rigid structural designs and material degradation at high temperatures. In this work, we improve two TEG structures: B-TEG (symmetrically modified with thermal conductive adhesive) and C-TEG (asymmetric design using arc-sprayed Zn/Al electrodes). Finite element simulations indicate that under thermal shock (from 100 °C to 250 °C), B-TEG can reduce interfacial stress by 78% compared to traditional rigidly bonded TEGs (A-TEG). Excellent stability was confirmed through 2000 thermal cycles and 1000 h of aging tests. The AC resistance (ACR) change rate of C-TEG is only 0.90%, outperforming B-TEG (1.28%) and A-TEG (which experienced 100% failure). Microstructural analysis (SEM/TEM) confirms that the arc-sprayed Ni layer forms an active NiBi₃ phase at the interface, effectively suppressing crack propagation and interelement diffusion. The asymmetric design of C-TEG, combined with scalable arc spraying manufacturing, provides a robust solution for enhancing TEG reliability in extreme thermal environments.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8609–8617"},"PeriodicalIF":4.7,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Smart and Low-Cost Flexible Strain Sensor Based on Graphene-MWCNT Porous Elastic Sponge for Home Control and Object Grasping Recognition Using Machine Learning","authors":"Xiao-Hai Chen,&nbsp;, ,&nbsp;Zhenhua Tang*,&nbsp;, ,&nbsp;Feng-Ming Li,&nbsp;, ,&nbsp;Hui-Qing Li,&nbsp;, ,&nbsp;Shui-Feng Li,&nbsp;, ,&nbsp;Yan-Ping Jiang,&nbsp;, ,&nbsp;Xin-Gui Tang,&nbsp;, and ,&nbsp;Ju Gao,&nbsp;","doi":"10.1021/acsaelm.5c01275","DOIUrl":"https://doi.org/10.1021/acsaelm.5c01275","url":null,"abstract":"<p >Flexible sensors are attracting significant interest due to their pivotal role in applications such as human activity monitoring and human–computer interaction. The low-cost polyurethane (PU) sponge with high elasticity and repeatability possesses significant potential for applications in flexible electronics and smart devices. Hence, we developed a piezoresistive pressure sensor based on a (graphene-MWCNT)/PU sponge composite, fabricated via a straightforward polymerization and dipping-drying process. This method leverages the stable porous structure of the PU sponge to ensure the robust adhesion of graphene and MWCNTs onto its skeleton, leading to the formation of an effective conductive network. The resulting low-cost sensor demonstrates excellent sensitivity (0.1 kPa^–1) and remarkable stability, maintaining its performance for 1000 cycles. Moreover, the smart sensor can be snugly affixed to the human body for the detection of human motion signals, enabling applications such as monitoring diverse human motions, recognizing different objects, and controlling external devices such as an LED light and a fan. Interestingly, by integrating the sensors into an array with a signal acquisition circuit, we developed a system capable of providing tactile feedback by mapping the real-time spatial pressure distribution during complex tasks. When combined with a deep learning algorithm, this system successfully classified five different grasped objects with an accuracy of 97.6%. These results highlight the significant potential of this sponge-based pressure sensor for applications in advanced household appliances and AI-integrated real-time control systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8516–8527"},"PeriodicalIF":4.7,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145117423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}