ACS Applied Electronic Materials最新文献

{"title":"N2/O2 Plasma-Tuned Hydrogen-Bonding Configurations for Suppressed Charge Trapping in PEALD SiON Films","authors":"Gi-Beom Park,&nbsp;Tae Heon Kim,&nbsp;Sang Won Yun,&nbsp;Sang-Hyun Kim,&nbsp;Ki-Cheol Song,&nbsp;Jin-Seong Park","doi":"10.1021/acsaelm.6c01914","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01914","url":null,"abstract":"<p>Hydrogen incorporation in silicon oxynitride (SiON) dielectric films plays a dual role by passivating electrically active defects while simultaneously acting as a potential source of charge trapping, depending on the chemical-bonding configuration. In this study, plasma-enhanced atomic layer-deposited (PEALD) SiON thin films were fabricated using diisopropylaminosilane and a mixed N₂/O₂ plasma, and the hydrogen-bonding states were systematically engineered by controlling the N₂:O₂ plasma flow ratio. Increasing the N₂:O₂ ratio progressively transformed the SiON network from oxide-rich to nitrogen-rich, resulting in an increased dielectric constant from 4.95 to 6.67 while decreasing the induced trap density from 6.15 × 10¹¹ to 1.84 × 10¹¹ cm^–2. An optimized N₂:O₂ ratio of 250:1 yielded the lowest capacitance–voltage hysteresis (0.10 V), whereas the N₂-only plasma process caused a substantial increase in hysteresis (1.85 V) despite its highest hydrogen concentration. Time-of-flight secondary ion mass spectrometry analyses revealed that hydrogen incorporation shifted from O–H-dominated to Si–H/N–H-dominated bonding environments as the nitrogen content increased. Density functional theory calculations further demonstrated that Si–H and Si–N bonds have lower bond dissociation energies than O–H and Si–O bonds, thereby explaining the instability of oxygen-deficient SiN_x-like networks under electrical stress. These results demonstrate that the charge-trapping behavior of PEALD SiON films is governed not by the total hydrogen concentration but by the hydrogen-bonding configuration and the structural stability of the Si–O–N network, thereby providing an effective strategy for defect passivation and suppressed charge trapping in dielectric films for advanced semiconductor devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9733–9742"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarization-Induced p-Type Doping in Graded InGaN: From Predictive Modeling to Device Testing","authors":"Justin D. Tan,&nbsp;Roark Chao,&nbsp;Alejandro M. Quevedo,&nbsp;Tanay Tak,&nbsp;Kent Nitta,&nbsp;Stephen Gee,&nbsp;Jon A. Schuller,&nbsp;Michael Iza,&nbsp;Shuji Nakamura,&nbsp;Stacia Keller,&nbsp;Steven P. DenBaars","doi":"10.1021/acsaelm.6c00779","DOIUrl":"https://doi.org/10.1021/acsaelm.6c00779","url":null,"abstract":"<p>Distributed polarization-induced p-type doping (DPD) in III-nitride heterostructures offers an alternative to conventional Mg acceptor doping, which is limited by low activation efficiency and parasitic optical absorption in optoelectronic devices such as lasers. Here, mobile hole populations are engineered in compositionally graded InGaN layers and superlattices via polarization-induced charge accumulation, with Hall measurements yielding sheet hole densities on the order of 1 × 10¹³ cm⁻². These values are in quantitative agreement with self-consistent one-dimensional Poisson−Schrödinger simulations, demonstrating the predictive capability of polarization-doped structure design. To assess device functionality, these p-type DPD regions were incorporated into simple GaN-based light-emitting diodes. The resulting devices exhibit current−voltage characteristics and optical output comparable to reference LEDs employing p-GaN, despite the absence of bulk Mg doping. These results demonstrate the feasibility of polarization-induced p-type doping for hole injection in vertical III-nitride devices and provide a foundation for future investigations of visible-wavelength laser architectures, where reducing Mg-related optical loss is of particular interest.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9305–9311"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transient Detour and Cooperative Oxygen Exchange in the Polarization Switching of Ferroelectric Hf0.5Zr0.5O2","authors":"Ryotaro Sahashi,&nbsp;Po-Yen Chen,&nbsp;Teruyasu Mizoguchi","doi":"10.1021/acsaelm.6c01804","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01804","url":null,"abstract":"<p>Hafnium zirconium oxide (HZO) has attracted significant attention as a core material for next-generation non-volatile memories due to its excellent ferroelectricity in the ultra-thin film regime and its CMOS process compatibility. However, the exploration of its polarization switching mechanism has predominantly relied on static energy barrier analyses, leaving the transient bond formation and cooperative dynamic mechanisms under actual electric field driving unresolved. In this study, we performed electric-field-induced MD simulations on a defect-free ideal HZO lattice using a fine-tuned machine learning force field (MACEField). As a result, we successfully reproduced the <em>P-E</em> hysteresis loop dynamically and demonstrated that the polarization switching in HZO is driven not by conventional simple displacement models (S:N/S:T models), but by the dynamic mutual exchange of 3-coordinated oxygen (O3c) and 4-coordinated oxygen (O4c). Analysis of the oxygen atom displacement trajectories revealed that this pathway is accompanied by a unique \"detour\" behavior originating from transient cation-oxygen bond formation. Furthermore, we identified an \"internal local volume compensation behavior\" in which the local volumetric expansion and contraction accompanying the coordination number changes partially counteract each other within the cell, thereby suppressing the macroscopic strain during polarization switching. These findings provide, from a dynamic perspective, a microscopic picture of how cooperative O3c/O4c exchange accommodates local structural changes during polarization switching. Such local compensation may contribute to the mechanical robustness of polarization switching under constrained conditions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9657–9668"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Dual-Mode Triboelectric Nanogenerator Based on Fe3O4/PDMS Composite and LIG Electrodes for Wave Energy Harvesting","authors":"You Zhai,&nbsp;Xin Liu","doi":"10.1021/acsaelm.6c01975","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01975","url":null,"abstract":"<p>Harvesting marine wave energy using triboelectric nanogenerators (TENGs) offers a promising route toward sustainable blue energy, yet most existing designs suffer from limited output under low-frequency and random wave excitation. Unlike previous dual-mode TENGs based on separately assembled units or external switching, this work integrates contact-separation (CS) and freestanding-layer (FL) modes in a single swing lever, both using the same Fe₃O₄/PDMS composite tribo-layer and LIG electrodes, with the Fe₃O₄ content (0–8%) tuned to optimize each mode independently. Optimal concentrations are 6% for the CS-TENG and 4% for the FL-TENG, balancing dielectric enhancement against agglomeration-induced charge leakage. Under identical swing excitation, the dual-mode TENG (DM-TENG) delivers an open-circuit voltage of 82 V, a short-circuit current of 37.9 μA, and a transferred charge of 51.7 nC, achieving a peak power of 640 μW at 10 MΩ and a power density of 266.7 mW/m². Compared to the CS-TENG and FL-TENG operating independently, the dual-mode configuration improves voltage by factors of approximately 2 and 14, current by 1.26 and 18, and charge by 1.75 and 6.6, respectively. The short-circuit current increases continuously with excitation frequency from 0.2 to 2 Hz, covering the typical frequency range of ocean waves. The DM-TENG successfully charges various capacitors within 100 s and powers a commercial hygrometer/thermometer in a water tank with a sealed acrylic box, confirming its ability to harvest wave energy and store it in capacitors for driving low-power electronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9754–9767"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crater-Inspired Hollow Microdome Arrays for Linear Megapascal-Range Wearable Pressure Sensing","authors":"Ming Lei,&nbsp;Chenlong Meng,&nbsp;Biao Qi,&nbsp;Yuanzhe Liang,&nbsp;Zidong Yin,&nbsp;Jiayi Xu,&nbsp;Bingpu Zhou,&nbsp;Yanan Zhang","doi":"10.1021/acsaelm.6c01672","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01672","url":null,"abstract":"<p>Reconciling high sensitivity with linearity over a broad pressure range remains a central challenge for flexible piezoresistive pressure sensors, because microstructured conductive interfaces often undergo rapid compaction under increasing pressure. Here, we report crater-inspired microdome arrays that couple a laser-roughened annular rim, hollow cavity, and inclined sidewalls to regulate staged deformation and conductive-contact evolution during compression. The architecture is fabricated by template-assisted replication followed by localized laser ablation, which converts closed microdomes into open crater-like units. Under loading, unlike solid microdomes that undergo continuous compression and flattening, the CMDA establishes localized contact through the annular rim, while the hollow cavity accommodates continued inward deformation and the high-stress region progressively extends toward the inclined sidewalls. This rim-initiated, cavity-assisted, and sidewall-supported deformation enables rapid resistance modulation at low pressure while delaying structural compaction and sustaining progressive contact evolution at high pressure. The optimized sensor delivers a linear piezoresistive response over 0–1200 kPa with a sensitivity of 158.1 kPa^–1, and its applicability is demonstrated in physiological monitoring, motion sensing, and pressure-encoded human–machine interaction. This work demonstrates an open-apex microstructural strategy that spatially separates contact initiation, deformation accommodation, and load support within a single microdome, thereby providing a structural route to flexible piezoresistive sensors that combine high sensitivity with megapascal-range linearity.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9588–9602"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interpretable Machine Learning-Enabled Time-Resolved Speech Command Recognition Using Triboelectric Laminate Acoustic Sensors","authors":"Anand Babu,&nbsp;Anna Šutka,&nbsp;Yebin Lee,&nbsp;Artis Linarts,&nbsp;Peter C. Sherrell,&nbsp;Dipankar Mandal,&nbsp;Chang Kyu Jeong,&nbsp;Andris Šutka","doi":"10.1021/acsaelm.6c01520","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01520","url":null,"abstract":"<p>The growth of wearable electronics has intensified the search for sustainable, high-performance materials for integration into smart sensing platforms. Conventional piezoelectric polymers, particularly fluorinated systems, offer excellent electromechanical transduction; however, they pose environmental and end-of-life challenges. Here, we demonstrate a recycled expanded polystyrene (PS) triboelectric laminate as an acoustic neuromorphic sensor. The multilayered structure of the triboelectric laminate enables a mechanoelectric response similar to that of piezoelectric polymers. The triboelectric laminate sensor was integrated into the face mask and generated current signals in the range of 4 nA (peak-to-peak) with distinct features in response to speech signals of various words. To exploit the recorded signals for dynamic speech recognition, we develop an interpretable physics-guided staged ML framework named Triboelectric Lexical Network (TriboLexNet), which learns the spectral signatures and combines time-frequency descriptors embedded into a random-forest framework. TriboLexNet is capable to recognize the specific word in the sentences, with a held-out segment-level accuracy of 99.4 ± 0.9% and a per-recording keyword-detection accuracy of 89.6 ± 6.4% under strict recording-level data partitioning, as well as locating it in terms of an interpretable probability distribution. Our approach establishes a viable platform for sustainable triboelectric acoustic neuromorphic sensing and demonstrates how physics-guided ML can be utilized in dynamic speech recognition with limited data.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9409–9420"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Frustrated Garnet Gd3Te2Li3O12 for High-Performance Sub-Kelvin Adiabatic Demagnetization Refrigeration","authors":"Dheeraj Ranaut,&nbsp;Govind Unnikrishnan,&nbsp;Samraj M,&nbsp;Sharath Kumar Channarayappa,&nbsp;Prashanta K. Mukharjee,&nbsp;Parasuraman Saravanan,&nbsp;Philipp Gegenwart,&nbsp;Deepshikha Jaiswal-Nagar","doi":"10.1021/acsaelm.6c01619","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01619","url":null,"abstract":"<p>Owing to the limited availability and high cost of ³He, adiabatic demagnetization refrigeration (ADR) has gained considerable attention as an efficient technology for ultralow-temperature applications. Here, we demonstrate the frustrated garnet Gd₃Te₂Li₃O₁₂ (GTLG) as a high-performance ADR material with substantially improved cooling capability over the commercial benchmark Gd₃Ga₅O₁₂ (GGG). Direct ADR measurements reveal a minimum temperature of 165 mK for GTLG, nearly two-fold lower than that of GGG (320 mK). Under a cryostat bath temperature of 1.8 K, GTLG maintains temperatures below 1 K for more than 12 h and below the ³He-temperature (0.4 K) for over 3 h, demonstrating excellent temperature stability for prolonged cryogenic operation. Magnetic and thermodynamic measurements show that GTLG undergoes antiferromagnetic ordering at <em>T</em>_N ∼ 0.25 K while retaining strong magnetic frustration and a large magnetic entropy reservoir favorable for efficient demagnetization cooling. Field-dependent heat capacity and magnetic Grüneisen parameter measurements further reveal the presence of field-induced critical behavior that enables cooling below <em>T</em>_N through enhanced entropy accumulation near the critical region. These findings establish GTLG as a promising next-generation magnetic refrigerant and highlight field-induced criticality as an effective design principle for developing advanced materials for ultralow-temperature refrigeration.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9513–9523"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi Interface-Enhanced Ni(Fe)P/Ni(Fe)OOH/MXene Catalysts for Efficient Alkaline Electrolysis","authors":"Nianwen Song,&nbsp;Yiran Guo,&nbsp;Feifei Chen,&nbsp;Xiaoya Hao,&nbsp;Xinyi Yang,&nbsp;Yong Zhang,&nbsp;Hong Dong,&nbsp;Feng Lu,&nbsp;Weihua Wang,&nbsp;Hui Liu,&nbsp;Yahui Cheng","doi":"10.1021/acsaelm.6c01539","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01539","url":null,"abstract":"<p>Electrochemical water electrolysis for hydrogen production offers a feasible way for renewable energy development but still faces significant challenges. Developing high-performance catalysts with high activity, low cost, long-term stability, corrosion resistance, and antisediment aggregation is crucial for the practical application of water electrolysis, particularly seawater electrolysis. For this purpose, we designed a Ni(Fe)P/Ni(Fe)OOH/MXene composite electrocatalyst on an iron foam substrate, which uses a multi-interface structure, Fe self-doping, and incomplete phosphating to jointly adjust the electronic structure and optimize H* absorption. Importantly, the incorporation of MXene significantly enhances electrical conductivity, increases the exposure sites, and facilitates gas release, thereby boosting the hydrogen evolution reaction (HER) performance. Meanwhile, the self-doping of the substrate and vertically staggered nanosheet morphology induced by MXene are utilized to enhance the bonding between the catalyst and substrate, as well as the antisediment aggregation performance, thereby achieving long-term stable operation in an alkaline seawater environment. Consequently, the catalyst demonstrates outstanding HER behavior, achieving 100 mA cm^–2 at 140 mV in freshwater and 165 mV in seawater, while maintaining stability for 45 h. Moreover, Ni(Fe)P/Ni(Fe)OOH/MXene was assembled with Fe-Ni(OH)₂ into a dual-electrode electrolysis cell, achieving 10 mA cm^–2 at only 1.49 V in freshwater, and 1.56 V in natural seawater. This work may open up a prospect for freshwater electrolysis of high efficiency HER catalyst.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9421–9429"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Deposition Temperature on the Microstructure and Electrical Properties of 50 nm High-k BaTiO3 MIM Capacitors Fabricated by Atomic Layer Deposition","authors":"Jiayi Chen,&nbsp;Zekai Wang,&nbsp;Mengkun Tian,&nbsp;Chengyang Zhang,&nbsp;Lance Fernandes,&nbsp;Sanghyun Kang,&nbsp;Yu-Hsin Kuo,&nbsp;Taeyoung Song,&nbsp;Typher Yom,&nbsp;Hsin-Yun Joy Chao,&nbsp;Jefferey Baxter,&nbsp;Matthew Boebinger,&nbsp;Sudarat Lee,&nbsp;Scott B. Clendenning,&nbsp;Won-Tae Koo,&nbsp;Asif I. Khan,&nbsp;Mark D. Losego","doi":"10.1021/acsaelm.6c01543","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01543","url":null,"abstract":"<p>Thermal atomic layer deposition (ALD) of BaTiO₃ (BTO) is of interest for next-generation microelectronic devices, including RAM and NAND memory. Herein, we investigate the influence of deposition temperature on the microstructure and electronic properties of 50 nm BTO thin films fabricated by ALD at 200, 220, 240, and 280 °C using bis-(1,2,4 triisopropylcyclopentadienyl)-Ba [Ba(iPr₃Cp₂)], titanium isopropoxide, and water as precursors, and highlight the significance of void formation in films based on this chemistry. Self-limiting ALD behavior is observed, such that the deposition rate and Ba:Ti ratio are independent of prolonged Ba dose times. XRD shows that films deposited at 220 and 240 °C are significantly more crystalline than films deposited at 280 °C after annealing. Scanning electron microscopy reveals a difference in film microstructure depending on deposition temperature, indicative of different “structural zones”. Cross-sectional transmission electron microscopy reveals that annealed, crystallized BTO films are susceptible to void formation, especially when lower ALD deposition temperatures are used. This void formation appears to result from a combination of the microstructure of the as-deposited film and the easily hydrated barium constituent and is identified as an important structural defect that will need to be avoided to achieve desired dielectric performance. Electrical properties, such as capacitance–voltage (CV), dielectric loss, and DC current–voltage (IV), are closely correlated with microstructure. Fifty-nanometer BTO thin films deposited at 220, 240, and 280 °C have relative permittivity values (ε_r) of 73, 60, and 33, respectively, at 10 kHz after annealing. Dielectric loss (tanδ) is as low as 0.001. A modest dispersion in capacitance is observed across varying sampling frequencies. Future research to further understand and mitigate void formation while retaining proper stoichiometry for this ALD chemistry is recommended to further improve dielectric performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9430–9438"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-Driven Heat Accumulation in Polymorphic Mo0.9W0.1Te2 Alloy","authors":"Hyeonju Kim,&nbsp;Seungyeon Oh,&nbsp;Chaeyeon No,&nbsp;Seungyeon Lee,&nbsp;Chaeeun Lee,&nbsp;Woohyun Cho,&nbsp;Heejun Yang,&nbsp;Jonggeol Na,&nbsp;Suyeon Cho","doi":"10.1021/acsaelm.6c01492","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01492","url":null,"abstract":"<p>Thermal transport in two-dimensional materials critically governs local temperature profiles in nanoscale systems, where spatial confinement can fundamentally alter heat accumulation and dissipation pathways. Here, we uncover laser-driven heat accumulation enabled by interfacial thermal confinement as an effective mechanism for controlling structural phase transitions in polymorphic Mo_0.9W_0.1Te₂. By introducing an interfacial air-gap thermal insulator, we demonstrate that heat dissipation is suppressed, resulting in pronounced local heat accumulation under focused laser irradiation. This confinement-driven heating substantially lowers the threshold for the 2H-to-1T′ transition, enabling deterministic phase transition at reduced power and exposure time. The air-gap-induced thermal resistance directly links laser-driven heat accumulation to structural phase transitions. Our results establish nanoscale thermal confinement as an effective approach to controlling local heat accumulation and spatially selective phase transformation in two-dimensional materials, offering a versatile thermal engineering strategy for future nanoelectronic platforms.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9387–9397"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}