ACS Applied Electronic Materials最新文献

{"title":"Large-scale Zincophilic/Buffered alloy Architecture for Tough Zn-based Aqueous Batteries with High Depth-of-Discharge","authors":"Kun Tang,&nbsp;Yunfang Ding,&nbsp;Haoyu Wu,&nbsp;Can Xu,&nbsp;Mo Tian,&nbsp;Xinyi Zhu,&nbsp;Yunrui Zhu,&nbsp;He Zhang* and Mingzai Wu*,&nbsp;","doi":"10.1021/acsaelm.4c0226110.1021/acsaelm.4c02261","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02261https://doi.org/10.1021/acsaelm.4c02261","url":null,"abstract":"<p >The aqueous rechargeable zinc batteries (ARZBs) are promising for broad application prospects in energy storage due to their high safety and low cost. However, the longevity and efficiency of ARZBs are compromised by dendrite growth and parasitic side reactions of the Zn anodes. The construction of a zincophilic coating on a zinc substrate is an effective strategy to enhance zinc deposition behavior and inhibit dendrite formation. Nevertheless, they are persecuted by the substantial morphological changes during repeated deposition and stripping processes, particularly at high discharge depths. Herein, under the assistance of the facile electroless strategy, a Cu₆Sn₅ alloy layer is constructed on a large (1200 mm × 250 mm) commercial copper foil (Cu₆Sn₅@Cu). Thereinto, the robust interaction between Cu₆Sn₅ and Zn²⁺ facilitates the regulation of Zn²⁺ flow, to further enhance lateral growth, minimize nucleation overpotential, and a dendrite-free morphology of zinc metal. In addition, the Cu–Zn alloy and Sn metal are constructed by an alloying process between the Cu phase of the Cu₆Sn₅ alloy and Zn. It is found that the Sn phase serves as a buffer medium to mitigate internal stress and volume changes from alloy reactions, preventing delamination of the alloy layer. As a result, the symmetrical batteries with Cu₆Sn₅@Cu anode exhibit remarkable performance for a cycle life of 7000 h with a high depth of discharge of 50%. Furthermore, the Mn-based full battery retains high capacity after 2000 cycles.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2456–2465 2456–2465"},"PeriodicalIF":4.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Near-Infrared Plasmonic Planar Films: Advancements in Aluminum-Doped Zinc Oxide for Sensing and Telecommunications Applications","authors":"Sajeesh Vadakkedath Gopi,&nbsp;Sumesh Karuvanveettil,&nbsp;Irulappan Packia Selvam and Sankara Narayanan Potty*,&nbsp;","doi":"10.1021/acsaelm.5c0001410.1021/acsaelm.5c00014","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00014https://doi.org/10.1021/acsaelm.5c00014","url":null,"abstract":"<p >Heavily doped metal oxides are considered to be efficient plasmonic materials for near infrared (NIR) applications due to their lower carrier density compared to noble metals such as gold and silver, which are traditionally used in the visible region. However, the development of real-world low-loss plasmonic materials for applications well below the telecommunication wavelength in near-infrared remained a challenge. In this work, we demonstrate the tunability of carrier concentration and the tunability of the negative dielectric constant of planar aluminum-doped zinc oxide (AZO) films coated on low-cost microscopic glass slides via precise engineering of material properties and film thickness, to perform as suitable plasmonic material in the near-IR-wavelength region. We evaluated the low-loss nature of the films and then showed the surface plasmon resonance (SPR) of these films in near IR for wavelengths &gt;1300 nm using Kretschmann-type prism configuration. We also portrayed the sensing behavior of these films at different refractive index media to ensure their applicability in device applications. This demonstration would be a breakthrough in the history of near-IR surface plasmon phenomena in the context of portable and point-of-care healthcare devices, where the film developed on glass substrates can be used as a disposable sensing chip with suitable functionalization.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2557–2563 2557–2563"},"PeriodicalIF":4.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Blending of Polythiophene/Silver Nanowires for Glucose Detection with Enhanced Sensitivity","authors":"Kaushlendra Agrahari,&nbsp;Yu-Wu Wang*,&nbsp;Chung-En Tsay and Yu-Han Cheng,&nbsp;","doi":"10.1021/acsaelm.4c0222510.1021/acsaelm.4c02225","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02225https://doi.org/10.1021/acsaelm.4c02225","url":null,"abstract":"<p >In the modern era, excess nutrition and uncontrolled diets have given rise to numerous chronic diseases, with diabetes emerging as a significant concern. Regular monitoring of blood sugar is essential for patients, but the invasive nature of blood sampling causes discomfort, deterring frequent testing. Hence, the development of noninvasive methods is imperative. This study utilizes a blend of poly(3-hexylthiophene) (P3HT) and silver nanowires (Ag NWs) to craft organic field-effect transistors (OFETs) for highly sensitive glucose detection. Ag NWs exhibit a strong affinity for oxygen molecules, easily forming silver oxide and preventing the oxygen doping issue in P3HT, resulting in improved OFET characteristics. Additionally, the Schottky barriers between P3HT/Ag NWs are highly sensitive to the released hydrogen ions from glucose oxidation. Consequently, devices fabricated through this methodology demonstrate exceptional sensitivity for detecting extremely low concentrations of glucose solutions. The blended device outperforms pure P3HT, with a 10-times increase in the on/off ratio (∼10⁴) and hole mobility (4 × 10^–3 cm²/(V s)). While detecting a 10 μM glucose solution (same level as saliva), the blended device’s normalized response (NR) soared to 24.62. Additionally, for a 20 mM glucose solution (the same level as blood), the NR of P3HT/Ag NWs surged to 428.49, much higher than that of the pure P3HT. The proposed glucose sensor showed a detection limit of 6 μM and a wide linear detection range (10 μM–20 mM), which encompasses the glucose levels found in both saliva and blood. These superior features demonstrate the potential application of P3HT/Ag NWs transistors in the fabrication of a high-performance glucose sensor. This study yields a highly promising avenue for noninvasive blood glucose detection.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2424–2432 2424–2432"},"PeriodicalIF":4.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Sensitive Ethanol Gas Sensors of Au Nanoparticle-Adsorbed ZnO Nanorod Arrays via a Photochemical Deposition Treatment","authors":"Yen-Lin Chu,&nbsp;Sheng-Joue Young*,&nbsp;You-Ru Huang,&nbsp;Sandeep Arya and Tung-Te Chu,&nbsp;","doi":"10.1021/acsaelm.4c0209110.1021/acsaelm.4c02091","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02091https://doi.org/10.1021/acsaelm.4c02091","url":null,"abstract":"<p >Vertically aligned zinc oxide (ZnO) nanorod (NR) arrays were successfully grown through a cheap hydrothermal route synthesis method (HTM) (95 °C, 3 h) prepared by 25 mM zinc nitrate hexahydrate [Zn(NO₃)₂·6H₂O] and 25 mM hexamethylenetetramine (C₆H₁₂N₄, HMTA). After simple photochemical deposition treatment [0.5 mM chloroauric acid (HAuCl₄·4H₂O)] under ultraviolet (UV) light irradiation, the noble gold nanoparticles (Au NPs) obviously decorated onto the ZnO NR surface. One-dimensional (1D) ZnO NR arrays without and with decorated Au NPs were called ZAuO-0 and ZAuO-1 nanostructures, respectively. Field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy (HR-TEM) were performed to explore the surface morphologies and elemental compositions of 1D NR arrays. All nanostructures synthesized easily at a low temperature were structurally uniform with good crystal performance and perpendicular to the substrate surface. The morphological images explored that the average length and diameter of the 1D ZAuO-0 nanostructures were 1.78 μm and 76.9 nm, whereas the average length and diameter of the 1D ZAuO-1 nanostructures were 1.81 μm and 78.2 nm, respectively. 1D ZnO nanostructures were analyzed with an X-ray diffraction (XRD) instrument, and results exhibited that all samples had a hexagonal wurtzite phase with the (002) plane as the most preferred <i>c</i>-axis orientation. The optical characteristics of all devices were investigated by photoluminescence (PL) analysis and UV–visible absorbance, and the results revealed the excitonic- (UV) and defect-related (green) emission regions. Energy-dispersive X-ray spectroscopy (EDX) was further performed to study the composition of the 1D ZAuO-1 NR arrays, which were found to comprise Zn (53.85 atom %), O (44.36 atom %), and Au (1.79 atom %) contents. As a result, all sensors performed best at 270 °C and had the optimal detection ethanol (C₂H₅OH) gas concentration of 100 ppm. Moreover, the 1D ZAuO-1 sensor exhibits a superior gas response performance (86.9%) over the 1D ZAuO-0 sensor (68.9%) and has good selectivity over ethanol gas. These remarkable ethanol-sensing features revealed the potential of the prepared 1D ZAuO-1 NR arrays as promising gas sensors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 6","pages":"2327–2338 2327–2338"},"PeriodicalIF":4.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02091","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni-Based Activator for Electroless Copper Deposition: Effect of Metal-Ion Ligand Stability Constant on the Reduction Deposition","authors":"Jingyi Chen,&nbsp;Tao Jiang,&nbsp;Yao Tan,&nbsp;Yuting Zong,&nbsp;Junjun Huang* and Jing Zhang*,&nbsp;","doi":"10.1021/acsaelm.4c0218610.1021/acsaelm.4c02186","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02186https://doi.org/10.1021/acsaelm.4c02186","url":null,"abstract":"<p >Electroless plating can achieve the metallization of nonconductive substrate surfaces. Of note, the realization of nonprecious metal catalysis is conducive to promoting the green development of this technology. In this article, a mixture of polyvinyl alcohol (PVA) and nickel chloride is used in catalytic solution by means of a nickel-chelating structure (electron transfer at the O/Ni interface), which simultaneously modifies and activates the substrate surface. Increasing the electron cloud density around nickel cations enhances their catalytic performance. Additionally, trisodium citrate, potassium sodium tartrate, nitrilotriacetic acid, thiourea, and sodium ethylenediamine tetraacetate were elected as coordination agents, and the influence of metal-ion ligand stability constant on the reduction deposition was researched. Coordination bonds can be established between the Cu²⁺ and O/N/S particles of functional groups in the ligands because paired electrons in O/N/S hybrid orbitals tend to occupy empty Cu²⁺ hybrid orbitals and establish coordination bonds. What is more important, the copper–potassium sodium tartrate ligand has the lowest stability constant and reduction barrier. Additionally, the plating solution to join the potassium sodium tartrate as a complexing agent can result in the deposition of a highly crystalline and uniform Cu-plated coating on the surface of the substrate. Hence, reducing the Cu²⁺ reduction barrier (bath stability constant) and enhancing the Ni-catalyzed activity (corresponding electronic structure) will facilitate the achievement of high-efficiency electroless copper plating under nonprecious metal catalysis.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1899–1905 1899–1905"},"PeriodicalIF":4.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143591205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual-Mode Polyimide Composite Membrane with a Hierarchical Structure for Passive Thermoregulation","authors":"Qiaoran Zhang,&nbsp;Dianhui Yang,&nbsp;Jingjing An,&nbsp;Xinfei Wang,&nbsp;Qianzhuo Xu,&nbsp;Yibo Wang,&nbsp;Zihan Li,&nbsp;Jie Chen* and Xianhu Liu*,&nbsp;","doi":"10.1021/acsaelm.4c0221110.1021/acsaelm.4c02211","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02211https://doi.org/10.1021/acsaelm.4c02211","url":null,"abstract":"<p >Smart thermoregulating textile has gained more and more attention due to its green and sustainable property with zero energy consumption. Passive heating and cooling of smart textiles responding to dynamic weather changes is a key issue to be resolved. Herein, based on the chemical design, we demonstrate a polyimide nanofiber (PINF) membrane via the electrospinning method by incorporation of fluorine-containing and aliphatic structures, and the resultant dual-mode polyimide@polypyrrole (PINF@PPy) composite membrane can be obtained with subsequent decoration by PPy. The sunlight reflection of cooling and heating sides of dual-mode composite membranes is ∼87.5% and ∼11.6% in wavelengths of 0.4–2.5 μm, respectively, which contributes to the temperature drops of ∼4.1 °C and increasement of ∼10.0 °C, exhibiting excellent passive dual-mode thermoregulating performance. The composite membrane has no obvious weight loss before ∼348.7 °C, exhibiting an ideal thermal stability. Additionally, it can be easily switched between cooling and heating modes by flipping the membrane, allowing it to keep the body comfortable with temperature fluctuations and contribute to reducing greenhouse gas emissions.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1914–1920 1914–1920"},"PeriodicalIF":4.3,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143591046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plastic Inorganic van der Waals Semiconductors for Flexible X-ray Detectors","authors":"Qiao Wang,&nbsp;Chengliang Wan,&nbsp;You Wu,&nbsp;Xuhong Fan,&nbsp;Shuai Wang,&nbsp;Yuzhou Pan,&nbsp;Mansoor Khalid,&nbsp;Haiying Xiao,&nbsp;Hongqiang Zhang*,&nbsp;Guoliang Ma*,&nbsp;Yongqing Fu and Ping-An Hu*,&nbsp;","doi":"10.1021/acsaelm.4c0193110.1021/acsaelm.4c01931","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01931https://doi.org/10.1021/acsaelm.4c01931","url":null,"abstract":"<p >Radiation detectors that are low-cost, portable, and operating at ambient temperature are highly desirable, especially if they are combined with flexibility and miniaturization. Plastic inorganic semiconductors, distinguished by their excellent electrical and mechanical properties, are promising candidates for portable and wearable radiation detectors. Herein, we demonstrate the potential of plastic inorganic van der Waals single crystals as flexible solid-state radiation detectors operating at room temperature. This study discovers that van der Waals materials such as gallium telluride (GaTe) show high plasticity as well as remarkable radiation detection characteristics, including high absorption coefficient and large mobility–lifetime (<i>μτ</i>) product (∼2 × 10^–3 cm² V^–1), which make them high-quality materials for constructing flexible X-ray detectors. The GaTe-based X-ray detector with asymmetric metal electrodes achieved an extremely low electric field of 1 × 10^–4 V μm^–1, and the detection sensitivity is as high as 40980 μC Gy_air^–1 cm^–2. The device performance was unaffected by its bending status, showing superior stability during prolonged exposure to continuous γ-ray radiation (total dose: 5000 Gy). Our research should be easily generalizable to other van der Waals semiconductors for fabricating flexible radiation sensors that can be embedded in curved or deformable systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1764–1774 1764–1774"},"PeriodicalIF":4.3,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143591181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Freestanding GaN Membranes via Lattice Inheriting from Nearly Single-Crystalline Bilayer Graphene","authors":"Yuxia Feng*,&nbsp;Wenkang Mei,&nbsp;Chen Zhang,&nbsp;Junkang Wu,&nbsp;Qinghe Wang,&nbsp;Yufei Yang,&nbsp;Liangchen Hu,&nbsp;Tengxuan Ma,&nbsp;Xun Zhang,&nbsp;Guoju Zhang,&nbsp;Hongcai Yang,&nbsp;Xuelin Yang*,&nbsp;Kaihui Liu,&nbsp;Chen Xu and Bo Shen*,&nbsp;","doi":"10.1021/acsaelm.4c0232410.1021/acsaelm.4c02324","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02324https://doi.org/10.1021/acsaelm.4c02324","url":null,"abstract":"<p >Freestanding gallium nitride (GaN) membranes can extend the applications of GaN to more functional devices through heterogeneous integration. Two-dimensional (2D) materials provide a versatile platform for the preparation of a freestanding ultrathin membrane. However, fabrication of a freestanding GaN membrane with the aid of 2D materials presents a challenge at the GaN/2D interface: keeping strong epitaxial interactions for epitaxy while contrarily ensuring weak interactions for intact exfoliation. Here, an approach for achieving a freestanding GaN membrane is demonstrated via epitaxy of GaN on chemical vapor deposition (CVD)-grown nearly single-crystalline bilayer graphene/sapphire, followed by intact exfoliation. Single-crystalline GaN is realized by inheriting the lattice orientation of graphene in a quasi-van der Waals epitaxy mode and modulating the growth kinetics of III-nitrides. Subsequently, controllable exfoliation is realized at the bilayer graphene interface by adjusting the interface adhesion. The achieved freestanding GaN membrane maintains a high quality comparable to that of GaN on a rigid substrate. This work offers a promising strategy for the fabrication of a high-quality freestanding GaN membrane for diverse device applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"2057–2064 2057–2064"},"PeriodicalIF":4.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143591307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dermoscopic evaluation of cutaneous histoplasmosis.","authors":"Akash P Mustari, Sophia Rao, Vinay Keshavamurthy, Debajyoti Chatterjee, Sendhil Kumaran","doi":"10.25259/IJDVL_889_2022","DOIUrl":"10.25259/IJDVL_889_2022","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"231-234"},"PeriodicalIF":4.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46241498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy","authors":"Silas A. Jentsch,&nbsp;Mario F. Zscherp,&nbsp;Vitalii Lider,&nbsp;Fabian Winkler,&nbsp;Andreas Beyer,&nbsp;Jürgen Belz,&nbsp;Nicolai M. Gimbel,&nbsp;Markus Stein,&nbsp;Donat J. As,&nbsp;Anja Henss,&nbsp;Kerstin Volz,&nbsp;Sangam Chatterjee and Jörg Schörmann*,&nbsp;","doi":"10.1021/acsaelm.4c0217410.1021/acsaelm.4c02174","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02174https://doi.org/10.1021/acsaelm.4c02174","url":null,"abstract":"<p >Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. This demands high-quality epitaxial growth of cubic InGaN/GaN quantum wells, especially for the red energy range. However, the growth of indium-bearing nitride quantum wells in the metastable cubic phase still poses many challenges. InGaN and GaN are typically grown at different temperatures and with different metal fluxes in molecular beam epitaxy, leading to either long waiting periods for temperature adjustment or growth under suboptimal conditions. Both degrade the crystal quality and optical properties. In this study, we apply a metal-modulated growth approach in molecular beam epitaxy that enables us to grow either self-assembled, phase pure, cubic InGaN/GaN multi quantum wells (MQWs) or homogeneous c-InGaN layers, only by adjusting the shutter duration times for Ga and In. We achieve smooth surfaces and sharp interfaces with a quantum well thickness tunable from 6 to 16 nm and a barrier thickness ranging from 4 to 10 nm. X-ray diffraction confirms &gt;99% phase purity of our cubic layers, while time-of-flight secondary ion mass spectrometry, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy provide detailed information on the quantum well composition and strain. Photoluminescence measurements at room temperature demonstrate the emission properties of the samples, with the emission wavelength ranging from 540 to 670 nm. Changing the barrier and QW thickness results in a shift of emission energy of up to 400 meV, which is explained by quantum confinement and strain. The high interface quality and excellent optical properties of the quantum wells without the need for multiple metal sources or long waiting times represent a significant advance in the development of next-generation optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 5","pages":"1891–1898 1891–1898"},"PeriodicalIF":4.3,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02174","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143591385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}