ACS Applied Electronic Materials最新文献_第5页

Liquid Metal-Filled Polymer Fiber as Wing-Type Inductive Sensors for Deformation and Airflow Sensing 液态金属填充聚合物纤维作为翼型变形和气流感应传感器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0017310.1021/acsaelm.5c00173

Qi Zhang, Nan Li, Cai Cheng, Ju Wang, Yujia Song and Jing Liu*,

{"title":"Liquid Metal-Filled Polymer Fiber as Wing-Type Inductive Sensors for Deformation and Airflow Sensing","authors":"Qi Zhang, Nan Li, Cai Cheng, Ju Wang, Yujia Song and Jing Liu*, ","doi":"10.1021/acsaelm.5c0017310.1021/acsaelm.5c00173","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00173https://doi.org/10.1021/acsaelm.5c00173","url":null,"abstract":"Flexible sensors, as vital components of flexible robots, play significant roles in monitoring the surrounding environment and tracking their own motion states. However, the development of flexible sensors that demonstrate both high sensitivity and reliability while being suitable for integration into actuated parts remains a challenge. In this study, we developed a wing-shaped sensor composed of a hollow fiber polymer structure, into which liquid metal was injected as a flexible conductive material and encapsulated with Ecoflex, which overall presents a cantilever beam structure on both sides. The hollow fiber acts as a natural insulator for the liquid metal coils, while their inner and outer diameters are only 190 and 290 μm, respectively. When both ends of the sensor are deformed by external action, the cantilever beams on both sides will be displaced relative to each other like wings, resulting in a corresponding change in the spatial position of the liquid metal coil, which in turn generates a change in the inductance signal. By leveraging this phenomenon, the wing-type sensor can detect minute displacements at both ends with an accuracy of 5% of their thickness while maintaining excellent stability over 100 cycle tests. This sensor was also able to measure wind speeds in a specific range of 2–10 m/s, with trends that conformed well to both theoretical foundations and simulation results. Further, we have demonstrated several application scenarios for this sensor using this superposition sensing mechanism. Overall, this study elucidates the inductive superposition mechanism of the cantilever beam coils on both sides and offers a strategy for integrating sensing and actuation in flexible robots.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3913–3921 3913–3921"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding 纳米球光刻技术用于极低片阻透明电极、焦耳加热和电磁干扰屏蔽的柔性嵌入式金属网

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0042510.1021/acsaelm.5c00425

Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li and Paul W. Leu*,

{"title":"Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding","authors":"Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li and Paul W. Leu*, ","doi":"10.1021/acsaelm.5c0042510.1021/acsaelm.5c00425","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00425https://doi.org/10.1021/acsaelm.5c00425","url":null,"abstract":"We demonstrate the highest transparent electrode performance among metal meshes fabricated via nanosphere lithography (NSL), achieving an order-of-magnitude improvement in the figure of merit FoM (σDC/σOP). Additionally, we present, for the first time, the application of metal meshes fabricated by NSL for transparent electromagnetic interference (EMI) shielding, enabled by exceptional improvements in sheet resistance. Our NSL method produces substrate-embedded metal meshes in PET and glass by etching trenches, yielding high-aspect-ratio features with low sheet resistance. Embedded structures also exhibit superior robustness during bending and tape tests compared to sputtered metallic films on the surface. As a transparent electrode, the flexible Ag meshes exhibit a sheet resistance of 1.52 Ω/sq and transparency of 73.1% as well as a sheet resistance of 0.22 Ω/sq and transparency of 58.1%, corresponding to FoMs of 737 and 2736, respectively. For transparent EMI shielding, the flexible metal meshes achieve a shielding efficiency (SE) of 34.5 dB with 73.1% visible transmission and an EMI SE of 52.8 dB with 58.1% visible transmission. As a flexible heater, the metal meshes can reach a saturation temperature exceeding 70◦C within 60 s under an applied voltage of 1.2 V. These embedded metal meshes hold promise for applications requiring ultralow sheet resistance, including heated windows and defrosting systems, large-area organic light-emitting diode (OLED) lighting and displays, solar cells, and EMI shielding.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4266–4278 4266–4278"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.5c00425","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding. 纳米球光刻技术用于极低片阻透明电极、焦耳加热和电磁干扰屏蔽的柔性嵌入式金属网。

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 eCollection Date: 2025-05-13 DOI: 10.1021/acsaelm.5c00425

Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li, Paul W Leu

{"title":"Flexible Embedded Metal Meshes by Nanosphere Lithography for Very Low Sheet Resistance Transparent Electrodes, Joule Heating, and Electromagnetic Interference Shielding.","authors":"Mehdi Zarei, Khashayar Mohammadi, Abdullah A Mahmood, Mingxuan Li, Paul W Leu","doi":"10.1021/acsaelm.5c00425","DOIUrl":"10.1021/acsaelm.5c00425","url":null,"abstract":"We demonstrate the highest transparent electrode performance among metal meshes fabricated via nanosphere lithography (NSL), achieving an order-of-magnitude improvement in the figure of merit FoM (σ DC /σ OP ). Additionally, we present, for the first time, the application of metal meshes fabricated by NSL for transparent electromagnetic interference (EMI) shielding, enabled by exceptional improvements in sheet resistance. Our NSL method produces substrate-embedded metal meshes in PET and glass by etching trenches, yielding high-aspect-ratio features with low sheet resistance. Embedded structures also exhibit superior robustness during bending and tape tests compared to sputtered metallic films on the surface. As a transparent electrode, the flexible Ag meshes exhibit a sheet resistance of 1.52 Ω/sq and transparency of 73.1% as well as a sheet resistance of 0.22 Ω/sq and transparency of 58.1%, corresponding to FoMs of 737 and 2736, respectively. For transparent EMI shielding, the flexible metal meshes achieve a shielding efficiency (SE) of 34.5 dB with 73.1% visible transmission and an EMI SE of 52.8 dB with 58.1% visible transmission. As a flexible heater, the metal meshes can reach a saturation temperature exceeding 70◦C within 60 s under an applied voltage of 1.2 V. These embedded metal meshes hold promise for applications requiring ultralow sheet resistance, including heated windows and defrosting systems, large-area organic light-emitting diode (OLED) lighting and displays, solar cells, and EMI shielding.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4266-4278"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12080244/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144091972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI in - poor IGZO：在形成气体退火和PBTI时对氢的优越回弹性

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0038310.1021/acsaelm.5c00383

Anastasiia Kruv*, Michiel J. van Setten, Adrian Chasin, Daisuke Matsubayashi, Hendrik F. W. Dekkers, Alexandru Pavel, Yiqun Wan, Kruti Trivedi, Nouredine Rassoul, Jie Li, Yuchao Jiang, Subhali Subhechha, Geoffrey Pourtois, Attilio Belmonte and Gouri Sankar Kar,

{"title":"In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI","authors":"Anastasiia Kruv*, Michiel J. van Setten, Adrian Chasin, Daisuke Matsubayashi, Hendrik F. W. Dekkers, Alexandru Pavel, Yiqun Wan, Kruti Trivedi, Nouredine Rassoul, Jie Li, Yuchao Jiang, Subhali Subhechha, Geoffrey Pourtois, Attilio Belmonte and Gouri Sankar Kar, ","doi":"10.1021/acsaelm.5c0038310.1021/acsaelm.5c00383","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00383https://doi.org/10.1021/acsaelm.5c00383","url":null,"abstract":"Integrating In–Ga–Zn oxide (IGZO) channel transistors into silicon-based ecosystems requires the resilience of the channel material to hydrogen. Standard In-rich IGZO (In = 40 metal at. %) suffers from degradation under forming gas anneal (FGA) and hydrogen-driven positive bias temperature instability (PBTI). In this paper, we demonstrate scaled, top-gated transistors with an atomic layer deposition (ALD)-deposited In-poor (In ≤ 17 metal atom %) IGZO channel that shows superior resilience to hydrogen compared to those with an In-rich IGZO channel. These devices, fabricated with a 300 mm semiconductor fabrication plant (FAB) process, with dimensions down to WCH × LTG = 80 × 40 nm2, show excellent stability during a 2 h, 420 °C forming gas anneal (0.06 ≤ |ΔVTH| ≤ 0.33 V) and improved resilience to H in PBTI at 125 °C (down to no detectable H-induced VTH shift) compared to In-rich devices. We demonstrate that the mechanism of device degradation by H in the FGA is different from that of the H-induced VTH instability in PBTI. We argue that the first is due to oxygen scavenging by H, and the second, H release from the gate dielectric into the channel. We also show that resilience to H in one process does not automatically translate to resilience to H in the other. This significant improvement in IGZO resilience to H enables the use of FGA treatments during fabrication, needed for silicon technology compatibility, as well as further scaling and 3D integration, bringing IGZO-based technologies closer to mass production.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4210–4219 4210–4219"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Orientation- and Pressure Dependence of the Vibrational Response of a Monolayer Crystal on a Vicinal Diamond Surface 邻近金刚石表面上单层晶体振动响应的取向和压力依赖关系

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0040610.1021/acsaelm.5c00406

Yi Zhao, Lingxiao Zhao, Chengjiang Du, Ruirui Liu, John A. McGuire* and Yanpeng Qi*,

{"title":"Orientation- and Pressure Dependence of the Vibrational Response of a Monolayer Crystal on a Vicinal Diamond Surface","authors":"Yi Zhao, Lingxiao Zhao, Chengjiang Du, Ruirui Liu, John A. McGuire* and Yanpeng Qi*, ","doi":"10.1021/acsaelm.5c0040610.1021/acsaelm.5c00406","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00406https://doi.org/10.1021/acsaelm.5c00406","url":null,"abstract":"We systematically investigate polarization-dependent Raman spectra of a monolayer crystal of WS2 on the (100) and (230) surfaces of a diamond. At ambient pressure, identical polarization dependence of the Raman spectra is observed on the different surfaces, independent of the orientation of the monolayer crystal relative to the diamond crystal. However, when monolayer WS2 is compressed to about 4 GPa, an abrupt drop of the intensity of the 2LA mode relative to the A’ mode occurs on the (100) surface and the (230) surface with the zigzag direction along the atomic step edges of the (230) surface. In contrast, no such drop is observed when the armchair direction is along or at 15° to the atomic steps of the (230) surface. We also observe a shift of the polarization angle of the intensity maxima of the 2LA and A’ modes on the (230) surface during compression. These results demonstrate that the atomic steps of a vicinal surface strongly modify the vibrational response under high pressure.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4259–4265 4259–4265"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-Chip Nanostructuring of Gold Microelectrodes in Phosphate-Buffered Saline for Broadband Single-Cell Impedance Biosensors 宽带单细胞阻抗生物传感器用磷酸缓冲盐水金微电极的片上纳米结构

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0005010.1021/acsaelm.5c00050

Ruben Van den Eeckhoudt*, Nurul Izni Rusli, Barbara Sieira, Susana Garcia Mayo, Sajid Hussain, Vasileios Vangalis, David Seveno, Kevin J. Verstrepen, Jon Ustarroz, Filip Tavernier, Michael Kraft and Irene Taurino,

{"title":"On-Chip Nanostructuring of Gold Microelectrodes in Phosphate-Buffered Saline for Broadband Single-Cell Impedance Biosensors","authors":"Ruben Van den Eeckhoudt*, Nurul Izni Rusli, Barbara Sieira, Susana Garcia Mayo, Sajid Hussain, Vasileios Vangalis, David Seveno, Kevin J. Verstrepen, Jon Ustarroz, Filip Tavernier, Michael Kraft and Irene Taurino, ","doi":"10.1021/acsaelm.5c0005010.1021/acsaelm.5c00050","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00050https://doi.org/10.1021/acsaelm.5c00050","url":null,"abstract":"Impedance-based single-cell sensors are gaining increased interest due to their affordability, potential for miniaturization and label-free nature. However, their sensitivity is restricted due to the electrical double layer effect which prevents accurate assessment of cell properties at low frequencies, e.g., cell size and membrane properties. This effect becomes increasingly problematic when the electrode size is reduced since then the double layer impedance dominates up to higher frequencies. This paper describes an extremely fast (1 s) technique for on-chip nanostructuring of gold microelectrodes that can be used for single cell impedance sensors. The developed technique achieves a 40-fold reduction in double layer impedance at 1 kHz by nanostructuring ready-made gold coplanar microelectrodes on chip without requiring extra fabrication steps. The technique uses only a DC voltage source and a 100× diluted phosphate-buffered saline (PBS) solution, making it cost-effective, nonhazardous, and ideally suited for a batch process. A comparison of single-cell impedance measurements of Saccharomyces cerevisiae yeast using bare and nanostructured microelectrodes shows improved reproducibility and accuracy for frequencies below 100 kHz.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3786–3794 3786–3794"},"PeriodicalIF":4.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143934091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Half-Oxidized MoS2-Based Memristor by UV-Ozone Treatment 紫外-臭氧处理半氧化二硫化钼基忆阻器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-28 DOI: 10.1021/acsaelm.5c0003110.1021/acsaelm.5c00031

Beomkyu Shin, Jong Yun Kim, Oh Hun Gwon, Seok-Ju Kang, Hye Ryung Byun, Daehyun Ryu, Kyu Yeon Kim and Young-Jun Yu*,

引用次数: 0

Contact Properties of Two-Dimensional Semiconductor As2C3 with Metals and Semimetals 二维半导体As2C3与金属及半金属的接触特性

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-27 DOI: 10.1021/acsaelm.5c0050710.1021/acsaelm.5c00507

Bo Huang, Jingying Yang, Xiang Liu, Zhen-kun Tang and Liemao Cao*,

{"title":"Contact Properties of Two-Dimensional Semiconductor As2C3 with Metals and Semimetals","authors":"Bo Huang, Jingying Yang, Xiang Liu, Zhen-kun Tang and Liemao Cao*, ","doi":"10.1021/acsaelm.5c0050710.1021/acsaelm.5c00507","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00507https://doi.org/10.1021/acsaelm.5c00507","url":null,"abstract":"The two-dimensional semiconductor As2C3, known for its ultrahigh carrier mobility of up to 4.45 × 105 cm2 V–1 s–1, holds significant potential for next-generation nanoelectronic devices. Selecting the appropriate electrodes is crucial for minimizing contact resistance and enhancing device performance. Using first-principles calculations, we systematically analyze the interface characteristics of As2C3 in conjunction with a range of metallic and semimetallic electrodes. Our findings indicate that both As2C3/Au and As2C3/Bi form efficient Ohmic contacts. At the same time, As2C3/graphene exhibits a Schottky contact, where the Schottky barrier height (SBH) can be tuned through external electric fields and vertical strain. Additionally, As2C3/NbS2 and As2C3/Sc demonstrate extremely low SBH, classifying them as quasi-Ohmic contacts. Notably, Sc-based contacts facilitate electron tunneling with probabilities reaching up to 100%. Upon contact with Au and Sc, a pronounced Fermi-level pinning (FLP) effect is observed in As2C3. These results offer valuable insights for the development and optimization of advanced As2C3-based electronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4319–4326 4319–4326"},"PeriodicalIF":4.3,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Liquid–Vapor Phase-Change Soft Composite Actuator Integrated with a Laser-Induced Graphene Heater 集成激光诱导石墨烯加热器的液-气相变软复合致动器

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-25 DOI: 10.1021/acsaelm.4c0213610.1021/acsaelm.4c02136

Shun-Wei Chiu, Chao-Shin Hsu, Chuan-Hui Ou, Cheng-Chun Huang, Ching-Yuan Su, Takahito Ono and Yao-Chuan Tsai*,

{"title":"Liquid–Vapor Phase-Change Soft Composite Actuator Integrated with a Laser-Induced Graphene Heater","authors":"Shun-Wei Chiu, Chao-Shin Hsu, Chuan-Hui Ou, Cheng-Chun Huang, Ching-Yuan Su, Takahito Ono and Yao-Chuan Tsai*, ","doi":"10.1021/acsaelm.4c0213610.1021/acsaelm.4c02136","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02136https://doi.org/10.1021/acsaelm.4c02136","url":null,"abstract":"Actuators are fundamental components for facilitating actuation and operational functions in diverse industrial and medical applications. Most actuators developed over the past few decades have been composed of rigid materials. However, rigid actuators often face spatial and operational limitations, and this issue has led to a growing interest in actuators made from soft materials. This study proposed and developed a liquid–vapor phase-change soft composite actuator integrated with a laser-induced graphene (LIG) heater. The liquid–vapor phase-change soft composite was prepared by mixing ethanol with the polymer elastomer Ecoflex 00-50. The LIG heater was fabricated on a polyimide substrate through laser ablation. Application of voltage to the LIG heater caused its temperature to rise, which induced a phase change of the ethanol within the composite, ultimately resulting in notable expansion of the soft composite. The LIG heater fabricated using a laser of power 2 W exhibited excellent electrothermal characteristics. Furthermore, the soft composite containing 20 vol % ethanol achieved a strain of 0.2 at 100 °C. The flexural deformation of the proposed soft composite actuator integrated with an LIG heater could be controlled by the specific applied voltage. An average bending curvature of 0.037 mm–1 was achieved at an applied voltage of 24 V.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"3765–3774 3765–3774"},"PeriodicalIF":4.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c02136","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Growth Control of Cu2-xS Films for Visible-Near Infrared Photodetectors 可见光-近红外探测器用Cu2-xS薄膜的生长控制

IF 4.3 3区材料科学

ACS Applied Electronic Materials Pub Date : 2025-04-25 DOI: 10.1021/acsaelm.5c0034010.1021/acsaelm.5c00340

Karthickraja Ramakrishnan, Y. Ashok Kumar Reddy and B. Ajitha*,

{"title":"Growth Control of Cu2-xS Films for Visible-Near Infrared Photodetectors","authors":"Karthickraja Ramakrishnan, Y. Ashok Kumar Reddy and B. Ajitha*, ","doi":"10.1021/acsaelm.5c0034010.1021/acsaelm.5c00340","DOIUrl":"https://doi.org/10.1021/acsaelm.5c00340https://doi.org/10.1021/acsaelm.5c00340","url":null,"abstract":"Nanostructured plasmonic copper sulfide (Cu2-xS), from the family of transition-metal sulfides with tunable optical and electrical properties, has drawn significant attention for broadband photodetectors in our research society. Herein, the attempt is made to grow Cu2-xS films via sulfurization of copper (Cu) films through the chemical vapor deposition (CVD) technique at different sulfurization temperatures (200–400 °C). A hexagonal structured CuS phase is observed for the film grown at 300 °C, with a higher crystalline nature confirmed through structural analysis. Surface compositional analysis suggests that the film deposited at 300 °C exhibits more copper vacancies, which shows the greater diffusion of sulfur atoms into copper films, which leads to the formation of well-aggregated nanospheres with larger grains over the film’s surface. Moreover, the band gap of the grown films is observed in the range of 1.79–1.92 eV, and the localized surface plasmon resonance (LSPR) band is observed in the near-infrared (NIR) region through optical studies, which confirms the plasmonic nature of Cu2-xS. Furthermore, the photodetector properties of the Au/Cu2-xS/Au test device are investigated in terms of photoresponsivity (Rλ), specific detectivity (D*), and external quantum efficiency (EQE) under visible and NIR light illuminations. The film grown at 300 °C exhibits superior results such as Rλ of 2.48 ± 0.02 A/W and 5.10 ± 0.02 A/W, D* of 3.02 ± 0.02 × 1012 Jones and 6.21 ± 0.02 × 1012 Jones, and EQE of 581 ± 5% and 646 ± 5% under visible (λ = 530 nm) and NIR (λ = 980 nm) light illuminations, respectively, with lower incident power density at a bias voltage of 3 V, which signify the potential of the fabricated test device in the broadband photodetectors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 9","pages":"4144–4160 4144–4160"},"PeriodicalIF":4.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0