ACS Applied Electronic Materials最新文献

{"title":"Polyelectrolyte Complexation Approach to Devise PEDOT:PSS-Based Moldable, Self-Healable, and Ultra-Stretchable Solid Electrolytes for Underwater Electronics","authors":"Shrinkhala Anand,&nbsp;Arpan Tewary,&nbsp;Chandan Upadhyay,&nbsp;Akhoury Sudhir Kumar Sinha and Umaprasana Ojha*,&nbsp;","doi":"10.1021/acsaelm.4c0127810.1021/acsaelm.4c01278","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01278https://doi.org/10.1021/acsaelm.4c01278","url":null,"abstract":"<p >PEDOT:PSS-based systems possessing effective optoelectronic behavior are promising for metal particle-free flexible electronics applications. However, these systems currently suffer from low stretchability, mechanical resilience, and performance in aqueous media. In this article, polyelectrolyte complexation between polyacryloyl hydrazide triflate (PAHT) and polystyrenesulfonate (PSS) is utilized to devise conducting ink with tunable viscosity at high PEDOT loading for fabricating stretchable, self-healable, and conductive solid electrolytes for flexible electronics applications. The possible ionic linkages (CONHNH₃⁺---SO₃̅ and SO₃̅---CS⁺) between the polymeric segments enabled film integrity in various organic and aqueous media and imparted effective tensile strength (0.10 MPa) and stretchability (∼1120%), while maintaining effective ionic conductivity (0.18 S/cm). The film displayed an effective Δ<i>R</i>/<i>R</i>₀ value of ∼26.2 at 600% stretching. As a proof of concept, the ability of these solid electrolytes toward strain-sensing application was studied. The system was able to display repeatable change in Δ<i>R</i>/<i>R</i>₀ values in response to various bodily movements under submersible conditions and adequate Gauge factor values of 4.4 and 0.20 under environmental and underwater conditions supporting its viability toward strain-sensing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142550382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of In-Air Post Deposition Annealing Process on the Oxygen Vacancy Content in Sputtered GDC Thin Films Probed via Operando XAS and Raman Spectroscopy","authors":"Nunzia Coppola*,&nbsp;Sami Ur Rehman,&nbsp;Giovanni Carapella,&nbsp;Luca Braglia,&nbsp;Vincenzo Vaiano,&nbsp;Dario Montinaro,&nbsp;Veronica Granata,&nbsp;Sandeep Kumar Chaluvadi,&nbsp;Pasquale Orgiani,&nbsp;Piero Torelli,&nbsp;Luigi Maritato,&nbsp;Carmela Aruta and Alice Galdi,&nbsp;","doi":"10.1021/acsaelm.4c0099210.1021/acsaelm.4c00992","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00992https://doi.org/10.1021/acsaelm.4c00992","url":null,"abstract":"<p >We investigate the ionic mobility in room-temperature RF-sputtered gadolinium doped ceria (GDC) thin films grown on industrial solid oxide fuel cell substrates as a function of the air-annealing at 800 and 1000 °C. The combination of X-ray diffraction, X-ray photoelectron spectroscopy, operando X-ray absorption spectroscopy, and Raman spectroscopy allows us to study the different Ce³⁺/ Ce⁴⁺ ratios induced by the post growth annealing procedure, together with the Ce valence changes induced by different gas atmosphere exposure. Our results give evidence of different kinetics as a function of the annealing temperature, with the sample annealed at 800 °C showing marked changes of the Ce oxidation state when exposed to both reducing and oxidizing gas atmospheres at moderate temperature (300 °C), while the Ce valence is weakly affected for the 1000 °C annealed sample. Raman spectra measurements allow us to trace the responses of the investigated samples to different gas atmospheres on the basis of the presence of different Gd–O bond strengths inside the lattice. These findings provide insight into the microscopic origin of the best performances already observed in SOFCs with a sputtered GDC barrier layer annealed at 800 °C and are fundamental to further improve sputtered GDC thin film performance in energy devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Achieving Ambipolar Transport Characteristics in the n-WS2 Channel via Remote p-Doping and its Enhancement-Mode Ambipolar Field-Effect Transistor Operation","authors":"Joonyup Bae,&nbsp;Dongryul Lee and Jihyun Kim*,&nbsp;","doi":"10.1021/acsaelm.4c0130710.1021/acsaelm.4c01307","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01307https://doi.org/10.1021/acsaelm.4c01307","url":null,"abstract":"<p >To overcome the inherent short-channel effects in Si microelectronics and enhance the performances of ultrahigh-density integrated circuits, researchers are focused on developing next-generation channel materials compatible with Si industry standards. Ambipolar two-dimensional (2D) transition metal dichalcogenides (TMDs), such as WS₂, exhibit great promise due to their layer-dependent bandgaps and highly comparable carrier mobilities for both holes and electrons. However, the prevalence of defects in WS₂, particularly chalcogen vacancies, often results in n-dominant behavior, restricting ambipolar transport. For the integration of n-WS₂ into Si-based complementary metal-oxide semiconductor (CMOS) platforms, reliable hole-doping techniques are essential to achieve comparable hole and electron transports. Herein, we introduce a remote charge-transfer doping approach to enable the stable hole-doping of n-WS₂ while maintaining its electron-conductive properties. Using WSe₂ as the separation layer and WO_<i>x</i> for remote p-doping, we achieve enhancement-mode ambipolar WS₂/WSe₂–WO_<i>x</i> heterostructure field-effect transistors (FETs). The fabricated ambipolar WS₂/WSe₂–WO_<i>x</i> FETs demonstrate comparable field-effect carrier mobilities (hole: 267 cm²/V s and electron: 13.6 cm²/V s) and current on/off ratios (hole: ∼1 × 10⁸ and electron: ∼1 × 10⁷). These results highlight the stable operational characteristics of the device and underscore the potential of 2D materials to reduce the footprint of the CMOS architecture and simplify the complex CMOS fabrication process.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning Magnetic Transition Temperatures and Magnetic Entropy Change in Ferrimagnetic GdFeCo Thin Films with Perpendicular Magnetic Anisotropy","authors":"Jagadish Kumar Galivarapu,&nbsp;Lisha Gu,&nbsp;Zhiwen Wang,&nbsp;Xiaoyong Fu,&nbsp;Jian Liu and Ke Wang*,&nbsp;","doi":"10.1021/acsaelm.4c0111110.1021/acsaelm.4c01111","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01111https://doi.org/10.1021/acsaelm.4c01111","url":null,"abstract":"<p >The magnetic phase transitions, perpendicular anisotropy, and magnetocaloric properties of amorphous GdFeCo ferrimagnetic thin films deposited with RF magnetron sputtering have been investigated in a wide temperature range by varying sputtering power. Magnetization and Hall effect studies of the Ta/Gd₂₄Fe₆₈Co₈/Ta multilayer structure reveal perpendicular magnetic anisotropy. A significant variation in magnetic ordering temperatures is noticed with a change in sputtering power. The Curie temperature (<i>T</i>_c) is found to increase from 476 to 488 K with increasing sputtering power from 50 to 70 W in the CoFe-rich phase. However, the Curie temperature decreases from 550 to 476 K with an increase in sputtering power from 80 to 100 W in the Gd-rich phase. The change in magnetic entropy rises substantially from 0.216 J/kgK for 50 W doubled to 0.4 J/kgK for a 90 W film with the application of 15 kOe field. These findings demonstrate that the sputtering power could be utilized to modulate the Curie temperature, perpendicular anisotropy, and magnetocaloric properties of amorphous ferrimagnetic thin films for multifunctional applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Magnetic Semiconductors by Substitutional Doping of Monolayer PtS2","authors":"Zeyneb Bordjiba,&nbsp;Paresh C. Rout,&nbsp;Minglei Sun,&nbsp;Athmane Meddour and Udo Schwingenschlögl*,&nbsp;","doi":"10.1021/acsaelm.4c0119610.1021/acsaelm.4c01196","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01196https://doi.org/10.1021/acsaelm.4c01196","url":null,"abstract":"<p >Using first-principles calculations, we study the electronic and magnetic properties of monolayer PtS₂ doped substitutionally with 3d transition metals. We obtain nonmagnetic semiconductors by doping with Ti and Ni, half-metals by doping with V and Cr, ferromagnetic semiconductors by doping with Co, and antiferromagnetic semiconductors by doping with Mn and Fe. Total magnetic moments of up to 3 μ_B are created. The Curie temperature is determined by means of a Heisenberg model in the mean-field approximation and adopting Monte Carlo simulations. 1T phase transition-metal dichal-cogenides turn out to be a promising platform for realizing two-dimensional magnetic semiconductors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142550521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Magnetic Semiconductors by Substitutional Doping of Monolayer PtS2","authors":"Zeyneb Bordjiba, Paresh C. Rout, Minglei Sun, Athmane Meddour, Udo Schwingenschlögl","doi":"10.1021/acsaelm.4c01196","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01196","url":null,"abstract":"Using first-principles calculations, we study the electronic and magnetic properties of monolayer PtS₂ doped substitutionally with 3d transition metals. We obtain nonmagnetic semiconductors by doping with Ti and Ni, half-metals by doping with V and Cr, ferromagnetic semiconductors by doping with Co, and antiferromagnetic semiconductors by doping with Mn and Fe. Total magnetic moments of up to 3 μ_B are created. The Curie temperature is determined by means of a Heisenberg model in the mean-field approximation and adopting Monte Carlo simulations. 1T phase transition-metal dichal-cogenides turn out to be a promising platform for realizing two-dimensional magnetic semiconductors.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142261081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room Temperature Real Air Highly Sensitive and Selective Detection of Ethanol and Ammonia Molecules Using Tin Nanoparticle-Functionalized Graphene Sensors","authors":"Manoharan Muruganathan*,&nbsp;Md. Zahidul Islam*,&nbsp;Afsal Kareekunnan,&nbsp;Yosuke Onda,&nbsp;Masashi Hattori and Hiroshi Mizuta,&nbsp;","doi":"10.1021/acsaelm.4c0130810.1021/acsaelm.4c01308","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01308https://doi.org/10.1021/acsaelm.4c01308","url":null,"abstract":"<p >Graphene, with its high surface area, is an important sensing material but lacks selectivity. As tin oxide has a higher selectivity for ethanol, we fabricated a graphene field-effect transistor (GFET) sensor functionalized with tin nanoparticles (Sn NPs) to enhance its selectivity and sensitivity for ethanol detection. Among 200 nm, 500 nm, 1 μm, and 2 μm channel sizes, 1 nm thickness Sn NPs functionalized on 200 nm GFET sensors exhibited high sensitivity and selective detection of ethanol and ammonia among five tested gases in a real air environment. Moreover, they demonstrated high sensitivity for ethanol and ammonia, detecting concentrations as low as 100 ppb at room temperature. The postfabrication thermal annealing facilitates the formation of Sn NP clusters and voids within the smaller 200 nm graphene channel, contributing to the sensor’s high sensitivity. Furthermore, the catalytic reaction of ethanol and ammonia molecules with oxygen molecules in the presence of Sn NPs releases electrons, which are reflected in n-doping in the graphene sensor measurements. The potential of this highly sensitive and selective ethanol and ammonia detection of graphene sensors can be utilized with machine learning techniques in the sensor cluster to identify different gases.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room Temperature Real Air Highly Sensitive and Selective Detection of Ethanol and Ammonia Molecules Using Tin Nanoparticle-Functionalized Graphene Sensors","authors":"Manoharan Muruganathan, Md. Zahidul Islam, Afsal Kareekunnan, Yosuke Onda, Masashi Hattori, Hiroshi Mizuta","doi":"10.1021/acsaelm.4c01308","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01308","url":null,"abstract":"Graphene, with its high surface area, is an important sensing material but lacks selectivity. As tin oxide has a higher selectivity for ethanol, we fabricated a graphene field-effect transistor (GFET) sensor functionalized with tin nanoparticles (Sn NPs) to enhance its selectivity and sensitivity for ethanol detection. Among 200 nm, 500 nm, 1 μm, and 2 μm channel sizes, 1 nm thickness Sn NPs functionalized on 200 nm GFET sensors exhibited high sensitivity and selective detection of ethanol and ammonia among five tested gases in a real air environment. Moreover, they demonstrated high sensitivity for ethanol and ammonia, detecting concentrations as low as 100 ppb at room temperature. The postfabrication thermal annealing facilitates the formation of Sn NP clusters and voids within the smaller 200 nm graphene channel, contributing to the sensor’s high sensitivity. Furthermore, the catalytic reaction of ethanol and ammonia molecules with oxygen molecules in the presence of Sn NPs releases electrons, which are reflected in n-doping in the graphene sensor measurements. The potential of this highly sensitive and selective ethanol and ammonia detection of graphene sensors can be utilized with machine learning techniques in the sensor cluster to identify different gases.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.7,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142261079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular Beam Epitaxy of Mixed Dimensional InGaSe/GaSe Hybrid Heterostructures on C-Sapphire","authors":"Quynh Trang Tran,&nbsp;Thi Bich Tuyen Huynh,&nbsp;Tu Huynh Pham,&nbsp;Umeshwar Reddy Nallasani,&nbsp;Hong-Jyun Wang,&nbsp;Nhu Quynh Diep*,&nbsp;Wu-Ching Chou*,&nbsp;Van-Qui Le,&nbsp;Kung-Hwa Wei and Thanh Tra Vu,&nbsp;","doi":"10.1021/acsaelm.4c0132510.1021/acsaelm.4c01325","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01325https://doi.org/10.1021/acsaelm.4c01325","url":null,"abstract":"<p >Molecular beam epitaxy (MBE) of InGaSe/2D-GaSe/sapphire hybrid structures has been reported in this study. We explore that MBE of the InGaSe layer on 2D-GaSe/sapphire results in a mixed dimensional alloy, comprising two-dimensional (2D) hexagonal-In_<i>x</i>Ga_1–<i>x</i>Se and three-dimensional (3D) zinc blende (InGa)₂Se₃, in which the 3D one is more favorable. It is also revealed that the surface morphology of the underneath 2D-GaSe layer grown under different modes, i.e., screw-dislocation-driven (SDD-GaSe) and layer-by-layer (LBL-GaSe), significantly governs the epitaxial behavior of the InGaSe top layer. Indeed, in the case of the InGaSe alloy grown on 2D LBL-GaSe, it is more and more preferable to nucleate from the edges of GaSe triangular flakes with increasing deposition temperature, thus promoting lateral growth. On the other hand, the surface morphology of InGaSe alloy on 2D SDD-GaSe appears to have a high density of nanoclusters. Moreover, a structural transition from 2D-to-3D has been recognized from in-situ RHEED observation, in which its on-set point is likely accelerated at lower growth temperatures. The gain from this study benefits our understanding of the mixed dimensional GaSe-based heterostructures by MBE, in terms of exploring semiconductor physics and widening potential applications of group-III metal chalcogenides.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01325","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Determination of the β to γ Phase Transformation Mechanism in Sc- and Al-Alloyed β-Ga2O3 Crystals","authors":"Andrew R. Balog*,&nbsp;Channyung Lee,&nbsp;Daniel Duarte-Ruiz,&nbsp;Sai Venkata Gayathri Ayyagari,&nbsp;Jani Jesenovec,&nbsp;Adrian E. Chmielewski,&nbsp;Leixin Miao,&nbsp;Benjamin L. Dutton,&nbsp;John McCloy,&nbsp;Caterina Cocchi,&nbsp;Elif Ertekin and Nasim Alem*,&nbsp;","doi":"10.1021/acsaelm.4c0076210.1021/acsaelm.4c00762","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00762https://doi.org/10.1021/acsaelm.4c00762","url":null,"abstract":"<p >β-Ga₂O₃ is a promising ultrawide bandgap semiconductor for next-generation power electronics, but the unintended formation of γ-Ga₂O₃ in β-Ga₂O₃ crystals has been observed in a variety of situations. Such defective inclusions, resulting from growth kinetics or ion-induced damage, can degrade the material performance and alter the local electronic structure. Previous studies have only examined the presence of γ-Ga₂O₃ in β-Ga₂O₃ thin-film structures. In this work, we observe the ubiquitous formation of a thin γ-Ga₂O₃ layer on the surface of mechanically exfoliated melt grown Al- and Sc-alloyed β-Ga₂O₃ single crystals and characterize the atomic scale structure across the interface using scanning transmission electron microscopy. Direct imaging paired with electron diffraction confirms γ-Ga₂O₃ formation, and orientation relationships are determined across the interface. Electron energy loss spectroscopy identifies the O K-edge spectral fingerprint of γ-Ga₂O₃, while many-body perturbation theory on top of density functional theory explains the shift of the spectral intensity between β- and γ-Ga₂O₃ as an interplay of excitonic and electronic effects. Further first-principles studies evaluate the role of strain on phase stability and identify that at an 8.5% tensile strain, γ-Ga₂O₃ becomes energetically favored over β-Ga₂O₃. Stabilization of the β phase of Ga₂O₃ under compressive stress is further confirmed through electron diffraction studies of the regions surrounding Vickers indentations. Phase stability is also observed to be independent of the alloying element. These findings confirm the capability for γ-Ga₂O₃ to occur under extreme environments while also providing evidence that strain is the underlying driving force causing the phase transformation.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}