ACS Applied Electronic Materials最新文献

{"title":"Exploring the Structural and Electronic Properties of Different Types of Silicon Nanotubes: A First-Principles Study","authors":"Donna Rashidi,&nbsp;Maryam Hakimi,&nbsp;Irmgard Frank and Ebrahim Nadimi*,&nbsp;","doi":"10.1021/acsaelm.4c0137210.1021/acsaelm.4c01372","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01372https://doi.org/10.1021/acsaelm.4c01372","url":null,"abstract":"<p >The exploration of silicon nanotubes (SiNTs) has garnered significant interest in recent years due to their potential applications in various fields, including microelectronics, nano-optics, and energy-storage devices. Unlike carbon nanotubes, SiNTs exhibit unique structural and electronic properties owing to the distinctive bonding characteristics of silicon atoms. While theoretical investigations have provided valuable insights into the stability and electronic properties of SiNTs, experimental synthesis methods have faced challenges in producing single-walled SiNTs with diameters comparable to their carbon counterparts. This study employed theoretical methods to investigate the structural stability, bonding properties, and electronic structure of different types of SiNTs. Our analysis covers a range of SiNT geometries, including armchair and zigzag hexagonal (h-SiNTs) and gear-like (g-SiNTs) as well as ladder-like (l-SiNTs) structures with different diameters. The h- and g-SiNTs show higher stability at larger diameters, while the l-SiNTs are more stable at lower diameters; surprisingly, the nanotube with pentagon cross-section shows the highest stability. Moreover, g-SiNTs generally show better stability than h-SiNTs. Additionally, electronic structure analyses reveal distinct structural and electrical properties of different SiNT types, providing valuable insights for future research and development in nanoelectronics and other applications. Except armchair g-SiNTs, almost all other SiNTs have a zero band gap.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Tip Angle on the Divergence and Efficiency of Electrospray Thrusters","authors":"Raúl Ramos-Tomás,&nbsp;David Villegas-Prados,&nbsp;Borja de Saavedra,&nbsp;Javier Cruz* and Borja Sepúlveda*,&nbsp;","doi":"10.1021/acsaelm.4c0122410.1021/acsaelm.4c01224","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01224https://doi.org/10.1021/acsaelm.4c01224","url":null,"abstract":"<p >Electrospray propulsion has appeared as a promising technology for space applications, particularly in response to the growing demand for small spacecrafts. Its high efficiency, low power consumption, and thrust control make it an attractive option for miniaturized propulsion systems. However, challenges remain in optimizing performance and controlling emission characteristics. Here we hypothesize that extremely sharp microneedles in externally wetted emitter devices, despite offering lower onset voltages and higher currents, can produce undesirable off-axis emission due to the propellant ejection perpendicular to the surface before arriving at the microneedle tip, thereby generating broad angular emission patterns. Through a combination of simulations and experimental evaluations, we analyzed the impact of emitter sharpness on the beam divergence and angular efficiency. It is shown that very sharp emitters (20° tip half-angle) exhibit clear off-axis emission with toroidal shape angular patterns in the plume even at moderate applied voltages, indicating emission of particles from the propellant before arriving at the tip and following trajectories nearly perpendicular to the emitter surface due to the generated electric field. Such off-axis emission significantly decreases the propulsive efficiency and may result in a decreased lifetime. This effect has been mitigated by increasing the tip semiangle to 30°, recovering a beam distribution with a typical Gaussian profile. Moreover, it has been observed that increasing the fluidic impedance of the nanostructured surface can slightly narrow the angular emission distribution to improve the propulsive efficiency. These findings underscore the importance of a precise geometric design to maximize the performance of electrospray thrusters, providing valuable insights into the development of advanced, high-efficiency propulsion systems for small satellites.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01224","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biomass-Derived Spherical Carbon Materials for Efficient Electromagnetic Wave Absorption","authors":"Chengxu Lu,&nbsp;Jianqiao Zhao,&nbsp;Zhaojun An and Guoli Tu*,&nbsp;","doi":"10.1021/acsaelm.4c0147510.1021/acsaelm.4c01475","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01475https://doi.org/10.1021/acsaelm.4c01475","url":null,"abstract":"<p >Biomass-derived carbon materials are hot in electromagnetic wave (EMW) absorption due to their wide sources, low cost, and unique structures. Yet, obtaining high-performance EMW absorbers from pure biomass via simple methods is challenging. In this work, a watermelon-derived spherical carbon material (SC-X) with a particle size distribution ranging from 2 to 10 μm was successfully synthesized using a combination of hydrothermal and carbonization methods. By increasing the carbonization temperature, the number of carbon defects in SC-X can be effectively increased, and the polarization loss capacity can be improved, achieving excellent EMW attenuation and impedance matching. The SC-4 carbonized at 900 °C achieved a minimum reflection loss value of −58.7 dB at 12.5 GHz frequency, with an effective absorption bandwidth of 3.5 GHz covering 10.8–14.3 GHz, and the corresponding thickness was only 1.7 mm. This work provides an effective strategy for the large-scale preparation of low-cost and high-performance EMW-absorbing materials derived from biomass.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Substrate-Dependent Sintering Mechanism of Ag Nanostructures Derived from Ag-Based Complex","authors":"Chuncheng Wang,&nbsp;Hiroaki Tatsumi,&nbsp;Hiren Kotadia and Hiroshi Nishikawa*,&nbsp;","doi":"10.1021/acsaelm.4c0125310.1021/acsaelm.4c01253","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01253https://doi.org/10.1021/acsaelm.4c01253","url":null,"abstract":"<p >The sintering of Ag nanostructures is a promising bonding technique for wide-bandgap semiconductor power devices. This study aimed to investigate the substrate-dependent sintering mechanisms of Ag nanostructures sintered on Ag, Al, and Cu substrates via the thermal decomposition of an Ag-based complex at 180 °C. A specific mechanism based on the reaction between the Ag-based complex and substrate can be elucidated for the sintering of Ag nanostructures. The sintering of Ag nanostructures on Ag and Al substrates involved the sintering of polydispersed Ag particles. The smaller Ag particles enhanced the stacking density by filling the interspaces between the larger Ag particles and acted as diffusion pathways, facilitating the sintering process and leading to superior low-temperature bonding performance. Notably, a shear strength of 21.8 MPa was achieved for the sintered Ag on the Ag substrate at 160 °C, indicating a well-bonded interface. However, the presence of an Al oxide layer on the Al substrate hindered the formation of a robust interface with sintered Ag, resulting in diminished shear strength. In contrast, the sintering of Ag nanostructures on the Cu substrate involved a displacement reaction between the Ag-based complex and Cu substrate. This reaction led to Cu compounds with a high decomposition temperature of 211 °C and formation of intermediate organic products and CuO in Ag joints, which deteriorated the joint properties. These findings provide valuable insights into selecting appropriate substrates for the sintering of Ag nanostructures using Ag-based complexes, thereby highlighting the critical role of substrate materials in optimizing bonding performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Liquid Metal Fiber-Based High-Sensitivity Strain and Pressure Sensors Enhanced by Porous Structure","authors":"Jiabo Tang,&nbsp;Yang Zou,&nbsp;Chengfeng Liu and Yonggang Lv*,&nbsp;","doi":"10.1021/acsaelm.4c0135510.1021/acsaelm.4c01355","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01355https://doi.org/10.1021/acsaelm.4c01355","url":null,"abstract":"<p >Fiber-based sensors have garnered increasing attention due to their remarkable comfort and adaptability to complex surfaces. Nonetheless, enhancing the sensitivity of fiber-based sensors remains a formidable challenge. In this study, a liquid metal porous fiber-based strain and pressure sensor was designed for monitoring human joint movement, pressure magnitude, and distribution as well as object proximity detection. A hollow double-layer fiber was fabricated via coaxial wet spinning, employing a spinning solution comprising a mixture of sodium chloride particles and thermoplastic polyurethane (TPU) solution, along with TPU solution and deionized water, from the outermost to the innermost layer. Subsequently, liquid metal was injected into the hollow fibers to obtain liquid metal porous fiber-based strain and pressure sensors. Remarkably, the pressure-sensing sensitivity was improved by 6.00 ± 1.70 and 3.42 ± 0.31 times in the pressure ranges of 0–0.06 and 0.06–8 MPa. The incorporation of a porous structure significantly enhanced the sensitivity of the pressure sensor. Furthermore, the developed sensor exhibited exceptional adaptability to pressure and strain stimuli across different magnitudes and application speeds while demonstrating remarkable stability and fatigue resistance, withstanding over 1000 cycles. The methodology established in this study offers an effective strategy for the design and fabrication of high-performance fiber sensors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142551796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantitative Dynamic Evolution of Unoccupied States in Hydrogen Diffused InGaZnSnO TFT under Positive Bias Temperature Stress","authors":"Hyunmin Hong,&nbsp;Min Jung Kim,&nbsp;Dong-Joon Yi,&nbsp;Dong Yeob Shin,&nbsp;Yeon-Keon Moon,&nbsp;Kyoung-Seok Son,&nbsp;Jun Hyung Lim,&nbsp;KwangSik Jeong* and Kwun-Bum Chung*,&nbsp;","doi":"10.1021/acsaelm.4c0143010.1021/acsaelm.4c01430","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01430https://doi.org/10.1021/acsaelm.4c01430","url":null,"abstract":"<p >Positive bias temperature stress (PBTS)-induced defects in self-aligned top-gate coplanar amorphous indium–gallium–zinc–tin oxide (a–IGZTO) thin-film transistors (TFTs) were quantitatively extracted as a function of hydrogen concentration. As the hydrogen concentration increased, the device properties and stability improved. As the stress time increased, the two decay constants that were extracted from the recovery of PBTS increased. Under PBTS, electrons were trapped in multiple defects simultaneously. Quantitative dynamic evolution of defect measurements showed that as the stress time increased, the activation energy and density of defects changed. As electrons moved to the dielectric, the density of shallow-level defects in the channel decreased, while the activation energy and density of deep-level defects increased. With a higher hydrogen concentration in the channel, the changes in defects were smaller. These findings indicate that hydrogen improves stability by passivating electron trap sites.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrically Tunable Electronic and Optical Properties of Bilayer GaS","authors":"Hsin-Yi Liu,&nbsp; and ,&nbsp;Jhao-Ying Wu*,&nbsp;","doi":"10.1021/acsaelm.4c0110910.1021/acsaelm.4c01109","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01109https://doi.org/10.1021/acsaelm.4c01109","url":null,"abstract":"<p >We employed first-principles calculations to investigate the geometric, electronic, and optical properties of bilayer GaS. Significant interlayer atomic interactions and a diverse range of multiorbital hybridizations result in various dispersion characteristics of energy bands, including numerous saddle points, band anticrossings, and partially flat subbands. The introduction of a perpendicular electric field (<i>E</i>_<i>z</i>) can manipulate the energy subbands, enhance the band anticrossings, induce additional saddle points and partially flat subbands, and trigger a semiconductor–metal transition. Spatial charge density distributions and projected density of states were utilized to elucidate the combined effects of interlayer atomic interactions and potential energy. The distinctive features of electronic properties manifest in optical absorbance, which exhibits a strong dependence on light polarization, the strength of <i>E</i>_<i>z</i>, and stacking sequence. The broad range of tunability in electronic and optical properties of bilayer GaS provides valuable insights for potential applications in optoelectronics.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hysteresis Effects in Photovoltaic Devices Based on a Two-Dimensional Molecular Ferroelectric","authors":"Qifu Yao,&nbsp;Qishuo Li,&nbsp;Shaojie Jiang,&nbsp;Jianping Yang,&nbsp;Weiwei Mao* and Xing’ao Li*,&nbsp;","doi":"10.1021/acsaelm.4c0129510.1021/acsaelm.4c01295","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01295https://doi.org/10.1021/acsaelm.4c01295","url":null,"abstract":"<p >Narrow bandgap two-dimensional molecular ferroelectric materials have enormous potential in the field of optoelectronics, but excellent species are still scarce. (4-Iodobutylammonium)₂(methylammonium)₂Pb₃I₁₀ (IBMPI) has been demonstrated to be a low-bandgap two-dimensional biaxial mixed perovskite molecular ferroelectric. In this work, we used IBMPI as the light-absorbing layer to fabricate p-i-n structured photovoltaic devices. Under the irradiation of AM 1.5 G, the IBMPI-based solar devices exhibit significant photovoltaic effects (<i>V</i>_OC ≈ 0.78 V, <i>J</i>_SC ≈ 5.07 mA/cm²). In addition, by adjustment of the bias history, the intrinsic ferroelectric polarization and ion migration in IBMPI can also be used to adjust photovoltaic performance, especially the open-circuit voltage and fill factor. This work indicates that this two-dimensional molecular ferroelectric is a potential candidate material for preparing tunable photovoltaic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142550434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Flexible Strain Sensor Based on Thermoplastic Polyurethane Melt-Blown Nonwoven with Molybdenum Disulfide for Human Motion Monitoring","authors":"Hui Sun,&nbsp;Youxiu Xie,&nbsp;Xinyu Liu,&nbsp;Gaoyuan Chen,&nbsp;Fengchun Li,&nbsp;Lei Xu and Bin Yu*,&nbsp;","doi":"10.1021/acsaelm.4c0138510.1021/acsaelm.4c01385","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01385https://doi.org/10.1021/acsaelm.4c01385","url":null,"abstract":"<p >Flexible wearable strain sensors have received great attention due to the wide applications in human motion monitoring, human–machine interfaces, and artificial intelligence robots. Thermoplastic elastic polymer films and fabrics are often used as their substrates. Thermoplastic polyurethane melt-blown nonwoven (TPU MB) can be considered as a substrate because of some advantages over these materials in terms of simple fabrication process, low price, and good breathability. Molybdenum disulfide (MoS₂), a member of transition metal dichalcogenides, is a promising candidate for next-generation flexible sensing devices due to its unique semiconductor essence and outstanding mechanical strength. Hence, we develop a high-performance flexible wearable strain sensor based on TPU MB with a microcrack structure consisting of two-dimensional (2D) MoS₂ nanosheets bridged by one-dimensional (1D) multiwalled carbon nanotubes (MWCNTs). MoS₂ and MWCNTs are anchored on the modified surface of TPU MB by polydopamine (PDA) with the assistance of simple ultrasound to obtain MoS₂/MWCNTs@TPU MB flexible strain sensors. The influence of the mass ratio of MoS₂ to MWCNTs on the sensing performances of the sensors is discussed. Due to the synergistic effect of MoS₂ with high electron mobility and MWCNTs with good conductivity, when the mass ratio of MoS₂ to MWCNTs is 1:0.9, the MoS₂/MWCNTs_0.9@TPU MB flexible strain sensor exhibits a wide sensing range from 0.5% to 300%, remarkable sensitivity (GF = 4271.9), fast response time (330 ms), and excellent durability (2600 tensile cycles). Benefiting from these superior sensing performances, this sensor can be successfully applied in monitoring large human motion (squatting, walking, and finger, elbow, and wrist bending) and subtle facial expression change (smiling, opening mouth, frowning, and raising eyebrows) as well as recognizing various vocal cord vibration modes (swallowing and pronunciation of various English words), which displays a great potential in intelligent wearable devices and soft robots.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of In-Air Post Deposition Annealing Process on the Oxygen Vacancy Content in Sputtered GDC Thin Films Probed via Operando XAS and Raman Spectroscopy.","authors":"Nunzia Coppola, Sami Ur Rehman, Giovanni Carapella, Luca Braglia, Vincenzo Vaiano, Dario Montinaro, Veronica Granata, Sandeep Kumar Chaluvadi, Pasquale Orgiani, Piero Torelli, Luigi Maritato, Carmela Aruta, Alice Galdi","doi":"10.1021/acsaelm.4c00992","DOIUrl":"10.1021/acsaelm.4c00992","url":null,"abstract":"<p><p>We investigate the ionic mobility in room-temperature RF-sputtered gadolinium doped ceria (GDC) thin films grown on industrial solid oxide fuel cell substrates as a function of the air-annealing at 800 and 1000 °C. The combination of X-ray diffraction, X-ray photoelectron spectroscopy, operando X-ray absorption spectroscopy, and Raman spectroscopy allows us to study the different Ce³⁺/ Ce⁴⁺ ratios induced by the post growth annealing procedure, together with the Ce valence changes induced by different gas atmosphere exposure. Our results give evidence of different kinetics as a function of the annealing temperature, with the sample annealed at 800 °C showing marked changes of the Ce oxidation state when exposed to both reducing and oxidizing gas atmospheres at moderate temperature (300 °C), while the Ce valence is weakly affected for the 1000 °C annealed sample. Raman spectra measurements allow us to trace the responses of the investigated samples to different gas atmospheres on the basis of the presence of different Gd-O bond strengths inside the lattice. These findings provide insight into the microscopic origin of the best performances already observed in SOFCs with a sputtered GDC barrier layer annealed at 800 °C and are fundamental to further improve sputtered GDC thin film performance in energy devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11500706/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142490973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}