ACS Applied Electronic Materials最新文献_第4页

Spectroscopic Correlation of Interfacial Electronic Structures with Voltage-Loss Trends in Perovskite Solar Cells 钙钛矿太阳能电池界面电子结构与电压损失趋势的光谱相关性

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-22 DOI: 10.1021/acsaelm.6c01281

Kaiwen Zheng, Jianming Yang, Pinghui Yang, Xiao Jia, Shiqi Hong, Maohua Huang, Wenjin Guo, Yida Xu, Sajian Wu, Tao Yuan, Zhixin Yu, Dexu Zheng

{"title":"Spectroscopic Correlation of Interfacial Electronic Structures with Voltage-Loss Trends in Perovskite Solar Cells","authors":"Kaiwen Zheng, Jianming Yang, Pinghui Yang, Xiao Jia, Shiqi Hong, Maohua Huang, Wenjin Guo, Yida Xu, Sajian Wu, Tao Yuan, Zhixin Yu, Dexu Zheng","doi":"10.1021/acsaelm.6c01281","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01281","url":null,"abstract":"Interfacial energy loss remains a key limitation to further improvements in perovskite solar cells because the electronic structures at buried interfaces can differ substantially from those of isolated films. The effects of molecular doping of charge transport layers on interfacial energetics, carrier dynamics, and voltage loss are investigated in perovskite solar cell stacks. Two representative systems are studied: F4TCNQ-doped Spiro-OMeTAD as a p-type hole transport layer in regular n-i-p stacks, and DMBI-doped PCBM as an n-type electron transport layer in inverted p-i-n stacks. The results show that the reported open-circuit voltage trends cannot be explained by conductivity enhancement alone. For F4TCNQ-doped Spiro-OMeTAD, a smaller vacuum-level shift is observed at the perovskite/Spiro-OMeTAD interface, together with carrier-decay changes that are consistent with changes expected for reduced interfacial charge accumulation and recombination. In inverted stacks, the effect of DMBI-doped PCBM is more complex because the interfacial energy alignment is altered under illumination. The observations provide a spectroscopic basis for interpreting the reported voltage-loss trends, while the microscopic origin of the measured interfacial shifts cannot be determined uniquely from ultraviolet photoelectron spectroscopy (UPS) alone.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9333–9343"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect-Mediated Electrostatic Decoupling of Memory and Photodetection in a WSe2/Graphene van der Waals Transistor WSe2/石墨烯范德华晶体管中记忆与光电检测的缺陷介导静电解耦

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-19 DOI: 10.1021/acsaelm.6c01794

Yuchen Su, Zhihao Wang, Keyu Qian, Jiaxi Yang, Zhengjin Weng, Yuanfang Yu, Shaoqing Xiao, Xiaofeng Gu, Haiyan Nan, Jialing Jian

{"title":"Defect-Mediated Electrostatic Decoupling of Memory and Photodetection in a WSe2/Graphene van der Waals Transistor","authors":"Yuchen Su, Zhihao Wang, Keyu Qian, Jiaxi Yang, Zhengjin Weng, Yuanfang Yu, Shaoqing Xiao, Xiaofeng Gu, Haiyan Nan, Jialing Jian","doi":"10.1021/acsaelm.6c01794","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01794","url":null,"abstract":"Two-dimensional optoelectronic devices offer a promising platform for integrating sensing and information storage, yet trap-mediated charge storage often interferes with dynamic photodetection. Here, we demonstrate a multifunctional WSe2/graphene van der Waals transistor that combines intrinsic defect-mediated memory with illumination-induced electrostatic screening. Deep-level defects in WSe2 enable nonvolatile charge storage without an additional floating gate, yielding a memory window of ∼33.2 V and retention beyond 103 s. Meanwhile, the device exhibits self-powered photovoltaic response at representative wavelengths of 460, 520, 640, and 1064 nm, together with a –3 dB cutoff frequency of ∼8.57 kHz. Notably, programming causes negligible changes in the response bandwidth. This behavior is consistent with illumination-enhanced electrostatic screening: trapped charges electrostatically modulate the graphene channel in the dark, whereas illumination is expected to reduce their long-range influence, rendering the optical response largely independent of the stored state. By selecting the readout bias, the same device further supports self-powered sensing and three distinguishable optoelectronic output states. This work provides a low-complexity strategy for integrating memory, sensing, and multistate optoelectronic control in a single two-dimensional heterostructure.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9647–9656"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic GaAs Nanowires on Silicon with TiO2/MoS2 Surface Engineering for Efficient and Stable Photoelectrochemical Hydrogen Evolution 基于TiO2/MoS2表面的单片砷化镓纳米线高效稳定的光电化学析氢工程

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-20 DOI: 10.1021/acsaelm.6c01598

Mahdi Alqahtani, Dip K. Nandi, Fahad Alghamdi, Xuezhe Yu, H. Aruni Fonseka, Abdulaziz Ahmed Bagabas, Haotian Zeng, Ana M. Sanchez, Soo-Hyun Kim, Huiyun Liu

{"title":"Monolithic GaAs Nanowires on Silicon with TiO2/MoS2 Surface Engineering for Efficient and Stable Photoelectrochemical Hydrogen Evolution","authors":"Mahdi Alqahtani, Dip K. Nandi, Fahad Alghamdi, Xuezhe Yu, H. Aruni Fonseka, Abdulaziz Ahmed Bagabas, Haotian Zeng, Ana M. Sanchez, Soo-Hyun Kim, Huiyun Liu","doi":"10.1021/acsaelm.6c01598","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01598","url":null,"abstract":"Photoelectrochemical (PEC) water splitting is a promising route to meet the escalating demand for clean energy and to mitigate its associated environmental impact. III–V semiconductors possess excellent optical properties and hold the record for solar-to-hydrogen conversion efficiency. However, their photocorrosion in aqueous electrolytes remains a major challenge. In this work, self-catalyzed GaAs nanowire (NW) photocathodes, grown monolithically on silicon (Si) substrates by molecular beam epitaxy, were protected with an amorphous titanium dioxide (TiO2) layer deposited by atomic layer deposition (ALD) and decorated with a conformal, ∼5.5 nm polycrystalline MoS2 co-catalyst grown by plasma-enhanced ALD. The TiO2 thickness was varied (15, 37, and 47 nm), where the 37 nm layer delivered the best performance: a saturated photocurrent density of 20 mA/cm2 at –0.54 V versus RHE and an onset potential of –0.30 V in 1.0 M H2SO4 under one-sun illumination, together with stable hydrogen evolution for more than 2 h of continuous operation. Growing the GaAs NWs directly on large-area Si substrates provided a scalable route toward high-performance PEC devices and low-cost multijunction solar-fuel systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9483–9491"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Noise Near-Infrared Photomultiplication Organic Photodetectors Enabled by Donor-Sidechain Steric Engineering 基于给体侧链立体工程的低噪声近红外光电倍增有机光电探测器

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-19 DOI: 10.1021/acsaelm.6c01773

Jing Gao, Jingnan Wu, Zhuangmiao Wang, Yu Tang, Donghong Yu, Ergang Wang, Furong Zhu

引用次数: 0

Research on the Fabrication of Ultrafast Micro-thermocouples Using Meniscus-Confined Electrodeposition 半月板约束电沉积制备超快微热电偶的研究

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-23 DOI: 10.1021/acsaelm.6c01614

Xuan Liao, Mingxuan Lv, Linxiao Teng, Xiaobo Liao, Yong Cai, Long Chen, Jian Zhuang, Lei Cheng, Xinai Zhao

{"title":"Research on the Fabrication of Ultrafast Micro-thermocouples Using Meniscus-Confined Electrodeposition","authors":"Xuan Liao, Mingxuan Lv, Linxiao Teng, Xiaobo Liao, Yong Cai, Long Chen, Jian Zhuang, Lei Cheng, Xinai Zhao","doi":"10.1021/acsaelm.6c01614","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01614","url":null,"abstract":"Precise microscale temperature sensing is important for evaluating the thermal reliability of microelectromechanical systems (MEMS), microfluidic devices, and other miniaturized systems. However, conventional lithography and vacuum-deposition-based fabrication methods are inherently limited in constructing freestanding three-dimensional (3D) thermocouple architectures. In this work, a maskless 3D additive manufacturing method based on meniscus-confined electrodeposition (MCED) is developed for the direct fabrication of Cu–Zn micro-thermocouples and sensor arrays. By spatially confining the electrochemical deposition process within a microscale meniscus, Cu and Zn microstructures can be sequentially deposited along programmed trajectories to form freestanding bimetallic thermocouple junctions without post-annealing. The fabricated Cu–Zn micro-thermocouple exhibits a response time of 7.8 ms and a Seebeck coefficient of 4.3 μV/°C, showing good agreement with the simulated thermoelectric response. A 3 × 3 micro-thermocouple array is further demonstrated for multipoint temperature measurement of a localized heat source. These results demonstrate the feasibility of MCED for the direct fabrication of spatially configurable micro-thermocouple devices and provide a flexible approach for localized and dynamic thermal sensing in miniaturized systems.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9503–9512"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine-Learning-Enabled Flexible Piezoelectric Nanogenerator Based on PVDF/KNNBZ Nanofibers for Intelligent Human Motion Recognition 基于PVDF/KNNBZ纳米纤维的机器学习柔性压电纳米发电机用于智能人体运动识别

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-23 DOI: 10.1021/acsaelm.6c01561

Chetna, Twinkle, Mihika Hetamsaria, Utsa Sarkar, Deepak Kumar Sharma, Dipankar Mandal, Sanjeev Kumar

{"title":"Machine-Learning-Enabled Flexible Piezoelectric Nanogenerator Based on PVDF/KNNBZ Nanofibers for Intelligent Human Motion Recognition","authors":"Chetna, Twinkle, Mihika Hetamsaria, Utsa Sarkar, Deepak Kumar Sharma, Dipankar Mandal, Sanjeev Kumar","doi":"10.1021/acsaelm.6c01561","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01561","url":null,"abstract":"The performance of flexible piezoelectric nanogenerators (FPNGs) based on poly(vinylidene fluoride) (PVDF) remains limited due to a poor electroactive β-phase. The incorporation of ceramic fillers as nucleating agents into the PVDF matrix is one of the most effective strategies to enhance the β-phase content. However, conventional piezoelectric ceramics offer limited polarization. In contrast, relaxor ferroelectrics are characterized by dynamic polar nanoregions (PNRs) that readily reorient under external stimuli. This nanoscale responsiveness translates into significantly higher piezoelectric coefficients, markedly amplifying the performance of PVDF based FPNGs. Rather than relying on conventional piezoelectric ceramics, this work introduces Bi3+/Zr4+ co-doped potassium sodium niobate (K0.425Na0.425Bi0.15Nb0.85Zr0.15O3, KNNBZ) as a filler, chosen specifically for its relaxor nature. Simultaneous A- and B-site co-doping destabilizes long-range ferroelectric order and promotes the growth of PNRs. The electrostatic interaction between the negatively charged surface of KNNBZ and PVDF –CH2– dipoles locks chains into the all-trans β-phase conformation, reinforced further by the mechanical stretching and in-situ poling inherent to electrospinning. The optimized device generates an open-circuit voltage of 29 V and a peak power density of 76.3 μW/cm2 and directly powers commercial LEDs. Combined with a machine learning algorithm, the FPNG distinguishes location-specific gait signals with 95.56% accuracy, demonstrating practical utility for intelligent, self-powered wearable health monitoring.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9459–9473"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene-Based Photodetectors for Silicon Photonic Optical Communications: Progress, Challenges, and Outlook 硅光子光通信中基于石墨烯的光电探测器：进展、挑战与展望

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-25 DOI: 10.1021/acsaelm.6c01405

Alexander Löwen, Zhuang Miao, Daniel Neumaier

{"title":"Graphene-Based Photodetectors for Silicon Photonic Optical Communications: Progress, Challenges, and Outlook","authors":"Alexander Löwen, Zhuang Miao, Daniel Neumaier","doi":"10.1021/acsaelm.6c01405","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01405","url":null,"abstract":"Graphene-based photodetectors have emerged as an interesting alternative to conventional semiconductor photodiodes for integrated silicon photonic systems. This perspective reviews the evolution of waveguide-integrated graphene photodetectors from their first demonstrations in 2013 to recent devices achieving responsivities up to 0.65 A/W and bandwidths exceeding 180 GHz, with experimentally proven potential to surpass 500 GHz. These advances highlight graphene’s unique potential for ultrahigh-speed optical communication and microwave photonic applications. We discuss the underlying photodetection mechanisms, key performance metrics, and integration strategies that enable efficient coupling between graphene and silicon photonic waveguides. Despite impressive progress, graphene photodetectors currently do not surpass state-of-the-art germanium photodiodes in responsivity, noise-equivalent power, or manufacturing maturity. Consequently, graphene is unlikely to replace established technologies in standard telecom receivers in the coming years. Instead, its greatest impact is expected in applications requiring extreme bandwidth, broadband wavelength operation, and heterogeneous integration across diverse photonic platforms.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9242–9251"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strain-Engineered Giant Tunneling Magnetoresistance in Fe-Intercalated MoS2 van der Waals Magnetic Tunnel Junctions 铁嵌入MoS2范德华磁隧道结的应变工程巨隧穿磁电阻

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-19 DOI: 10.1021/acsaelm.6c01591

Huan Wang, Xiaojie Liu, Hui Wang, Haitao Yin

{"title":"Strain-Engineered Giant Tunneling Magnetoresistance in Fe-Intercalated MoS2 van der Waals Magnetic Tunnel Junctions","authors":"Huan Wang, Xiaojie Liu, Hui Wang, Haitao Yin","doi":"10.1021/acsaelm.6c01591","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01591","url":null,"abstract":"This work proposes an all-two-dimensional magnetic tunnel junction consisting of Fe-intercalated MoS2 ferromagnetic electrodes and a pristine bilayer MoS2 tunneling barrier. We systematically investigate the modulation mechanism of out-of-plane tensile strain on the spin-transport properties of the device using quantum transport simulations. The results reveal that Fe intercalation induces a semiconductor-to-ferromagnetic-metal transition in MoS2 and the magnetic moment increases progressively under tensile strain. Under an applied tensile strain of 3%, the MTJ achieves an ultrahigh tunneling magnetoresistance of 1.67 × 105% accompanied by a spin injection efficiency of 90%. The enhancement of spin-dependent tunneling efficiency under tensile strain originates from a Fermi level shift of the electrodes and modulation of the spin asymmetry of the interfacial Schottky barrier. By integrating atomic intercalation with strain engineering, this work establishes a new paradigm for designing high-performance, low-power two-dimensional spintronic devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9474–9482"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge-Trapping Memory Characteristics and Stability Testing of Gd2O3-Based MOS Capacitors 基于gd2o3的MOS电容器的电荷捕获存储特性及稳定性测试

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-21 DOI: 10.1021/acsaelm.6c01620

Ph. Nonglen Meitei, Stacy A. Lynrah, Franco Mayanglambam

{"title":"Charge-Trapping Memory Characteristics and Stability Testing of Gd2O3-Based MOS Capacitors","authors":"Ph. Nonglen Meitei, Stacy A. Lynrah, Franco Mayanglambam","doi":"10.1021/acsaelm.6c01620","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01620","url":null,"abstract":"Ag/Gd2O3/Si metal-oxide-semiconductor (MOS) capacitors incorporating RF-magnetron-sputtered Gd2O3 dielectric layers were fabricated to investigate the influence of dielectric thickness on their structural, optical, interfacial, and electrical properties. Films deposited for 2 and 4 h produced Gd2O3 layers of 16.57 and 33.46 nm, respectively. Increasing deposition time promoted partial structural ordering and increased surface roughness, while the optical bandgap decreased slightly from 5.1 to 5.0 eV. The thicker film’s greater roughness correlated with a higher interface-state density (∼1.02 × 1011 eV–1 cm–2) compared with the thinner film (9.07 × 1010 eV–1 cm–2). Frequency-dependent C–V and G–V measurements revealed clear deep-depletion, depletion, and accumulation regions for both devices; oxide thickness strongly influenced accumulation capacitance, series resistance, and interface behavior. Clockwise C–V hysteresis in both capacitors indicates electron trapping in the Gd2O3 layer. As the sweep voltage increased from ±1 to ±5 V, the memory window widened from 0.66 to 3.05 V for the thinner film and from 1.62 to 3.51 V for the thicker film. The thicker dielectric also had better charge retention, with an extrapolated charge loss of only 3.92% compared to 6.06% for the thinner film. These findings show that tuning Gd2O3 thickness via deposition time is an effective way to optimize interface properties and improve the memory performance of high-k MOS capacitors for future nonvolatile memory applications.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9534–9541"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect-Engineered WSe2 Surface to Improve the Growth of Semimetal-Like Sn Contact 缺陷工程WSe2表面促进半金属类锡接触生长

IF 4.7 3区材料科学

ACS Applied Electronic Materials Pub Date : 2026-11-10 Epub Date: 2026-10-21 DOI: 10.1021/acsaelm.6c01457

Yen-Yu Lai, Ruei-Jhe Tu, Wei-Nian Chen, Chun-Liang Lin

{"title":"Defect-Engineered WSe2 Surface to Improve the Growth of Semimetal-Like Sn Contact","authors":"Yen-Yu Lai, Ruei-Jhe Tu, Wei-Nian Chen, Chun-Liang Lin","doi":"10.1021/acsaelm.6c01457","DOIUrl":"https://doi.org/10.1021/acsaelm.6c01457","url":null,"abstract":"Transition metal dichalcogenides (TMDs) are promising for further device scaling. However, their practical application is hindered by high contact resistance at the metal–TMD interface. This issue originates from the van der Waals (vdW) gap, which introduces a tunneling barrier, and from metal-induced gap states (MIGS), which lead to Fermi-level pinning (FLP). Two approaches have been proposed to reduce the contact resistance: employing semimetal electrodes to suppress MIGS and introducing chalcogen vacancies to create non-van der Waals (non-vdW) contacts. In this work, we combine these two strategies by investigating the growth of Sn, a metallic electrode that exhibits reduced FLP and semimetal-like contact behavior on the defect-engineered WSe2, a relatively p-type TMD. Defects were introduced via ion bombardment, and the control parameters of acceleration energy and ion species (Ar+ and Ne+) were systematically studied to assess their effects on defect-creation efficiency. It is found that defect density strongly depends on the bombardment conditions, with Ne+ and lower acceleration energies leading to more efficient defect formation. Furthermore, we compared the growth behavior of Sn on defective and pristine WSe2 surfaces, and Sn islands preferentially nucleate at defect sites, indicating enhanced interaction between Sn and WSe2 due to defect-mediated nucleation. These results demonstrate that defect engineering promotes Sn nucleation and the formation of a highly covered Sn layer on WSe2, providing a structural pathway toward the realization of semimetal-like contacts with reduced contact resistance in 2D semiconductor devices.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 21","pages":"9380–9386"},"PeriodicalIF":4.7,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0