基于金属-有机框架的忆阻器:合成、机理、分类及未来

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Dong Li, , , Daigan Wang, , , Ye Tao, , , Shaojie Zhang, , , Guokun Ma, , , Yiheng Rao, , , Chenyin Feng, , , Chunlei Liu*, , , Houzhao Wan*, , and , Hao Wang*, 
{"title":"基于金属-有机框架的忆阻器:合成、机理、分类及未来","authors":"Dong Li,&nbsp;, ,&nbsp;Daigan Wang,&nbsp;, ,&nbsp;Ye Tao,&nbsp;, ,&nbsp;Shaojie Zhang,&nbsp;, ,&nbsp;Guokun Ma,&nbsp;, ,&nbsp;Yiheng Rao,&nbsp;, ,&nbsp;Chenyin Feng,&nbsp;, ,&nbsp;Chunlei Liu*,&nbsp;, ,&nbsp;Houzhao Wan*,&nbsp;, and ,&nbsp;Hao Wang*,&nbsp;","doi":"10.1021/acsaelm.5c01372","DOIUrl":null,"url":null,"abstract":"<p >Metal–organic frameworks (MOFs), as organic–inorganic hybrid materials, possess the advantages of both the flexibility and functional diversity of organic materials and the high stability and mechanical properties of inorganic materials. They have a rich and diverse framework and pore structures that can be designed and tailored, high chemical and thermal stability, and flexibility. MOFs can be widely used in fields such as nonvolatile memory, neural morphology computing, and flexible wearable devices. This Perspective summarizes the research progress of memristive devices using MOF materials as functional layers in recent years. Moreover, it elaborately expounds on the challenges encountered and opportunities presented to them. This review mainly introduces the synthesis methods of MOF materials and the common resistance switching mechanisms of such resistive devices. Based on the classification of metal nodes in MOFs, we discuss the performance, advantages, and potential applications of MOF-based resistive devices and put forward the future development direction of this field.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8295–8321"},"PeriodicalIF":4.7000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Memristors Based on Metal–Organic Frameworks: Synthesis, Mechanism, Categories, and Future\",\"authors\":\"Dong Li,&nbsp;, ,&nbsp;Daigan Wang,&nbsp;, ,&nbsp;Ye Tao,&nbsp;, ,&nbsp;Shaojie Zhang,&nbsp;, ,&nbsp;Guokun Ma,&nbsp;, ,&nbsp;Yiheng Rao,&nbsp;, ,&nbsp;Chenyin Feng,&nbsp;, ,&nbsp;Chunlei Liu*,&nbsp;, ,&nbsp;Houzhao Wan*,&nbsp;, and ,&nbsp;Hao Wang*,&nbsp;\",\"doi\":\"10.1021/acsaelm.5c01372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Metal–organic frameworks (MOFs), as organic–inorganic hybrid materials, possess the advantages of both the flexibility and functional diversity of organic materials and the high stability and mechanical properties of inorganic materials. They have a rich and diverse framework and pore structures that can be designed and tailored, high chemical and thermal stability, and flexibility. MOFs can be widely used in fields such as nonvolatile memory, neural morphology computing, and flexible wearable devices. This Perspective summarizes the research progress of memristive devices using MOF materials as functional layers in recent years. Moreover, it elaborately expounds on the challenges encountered and opportunities presented to them. This review mainly introduces the synthesis methods of MOF materials and the common resistance switching mechanisms of such resistive devices. Based on the classification of metal nodes in MOFs, we discuss the performance, advantages, and potential applications of MOF-based resistive devices and put forward the future development direction of this field.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 18\",\"pages\":\"8295–8321\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.5c01372\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c01372","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

金属-有机骨架(MOFs)作为有机-无机杂化材料,既具有有机材料的柔韧性和功能多样性,又具有无机材料的高稳定性和力学性能。它们具有丰富多样的框架和孔隙结构,可以设计和定制,具有高化学和热稳定性以及灵活性。mof可广泛应用于非易失性存储器、神经形态计算和柔性可穿戴设备等领域。本展望综述了近年来以MOF材料作为功能层的记忆器件的研究进展。此外,还详细阐述了他们所面临的挑战和机遇。本文主要介绍了MOF材料的合成方法以及这类电阻器件常见的电阻开关机理。在对mof中金属节点进行分类的基础上,讨论了基于mof的电阻器件的性能、优势和潜在应用,并提出了该领域未来的发展方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Memristors Based on Metal–Organic Frameworks: Synthesis, Mechanism, Categories, and Future

Memristors Based on Metal–Organic Frameworks: Synthesis, Mechanism, Categories, and Future

Metal–organic frameworks (MOFs), as organic–inorganic hybrid materials, possess the advantages of both the flexibility and functional diversity of organic materials and the high stability and mechanical properties of inorganic materials. They have a rich and diverse framework and pore structures that can be designed and tailored, high chemical and thermal stability, and flexibility. MOFs can be widely used in fields such as nonvolatile memory, neural morphology computing, and flexible wearable devices. This Perspective summarizes the research progress of memristive devices using MOF materials as functional layers in recent years. Moreover, it elaborately expounds on the challenges encountered and opportunities presented to them. This review mainly introduces the synthesis methods of MOF materials and the common resistance switching mechanisms of such resistive devices. Based on the classification of metal nodes in MOFs, we discuss the performance, advantages, and potential applications of MOF-based resistive devices and put forward the future development direction of this field.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信