利用通道宽度优化的TiO2光电晶体管进行低能级紫外检测

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Murat Artuc*,  and , Selim Acar, 
{"title":"利用通道宽度优化的TiO2光电晶体管进行低能级紫外检测","authors":"Murat Artuc*,&nbsp; and ,&nbsp;Selim Acar,&nbsp;","doi":"10.1021/acsaelm.5c01360","DOIUrl":null,"url":null,"abstract":"<p >We report on the fabrication and UV photoresponse characteristics of TiO<sub>2</sub>-based phototransistors (TiO<sub>2</sub>–PTs) incorporating a TiO<sub>2</sub>/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined <i>I</i>–<i>V</i> characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 10<sup>10</sup> Jones at <i>V</i><sub>GS</sub> = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO<sub>2</sub>-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8561–8570"},"PeriodicalIF":4.7000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor\",\"authors\":\"Murat Artuc*,&nbsp; and ,&nbsp;Selim Acar,&nbsp;\",\"doi\":\"10.1021/acsaelm.5c01360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >We report on the fabrication and UV photoresponse characteristics of TiO<sub>2</sub>-based phototransistors (TiO<sub>2</sub>–PTs) incorporating a TiO<sub>2</sub>/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined <i>I</i>–<i>V</i> characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 10<sup>10</sup> Jones at <i>V</i><sub>GS</sub> = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO<sub>2</sub>-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 18\",\"pages\":\"8561–8570\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.5c01360\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c01360","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文报道了通过电子束蒸发在Si衬底上生长TiO2/SiN活性层的TiO2基光电晶体管(TiO2 - pts)的制备及其紫外光响应特性。制作了固定通道长度(~ 2.5 μm)和可变通道宽度(6.0、7.5和9.0 μm)的器件,以检查几何效应对光电行为的影响。所有pt在18 μW, 385 nm光照下具有良好的I-V特性和较强的UV敏感性。最宽的通道器件(9.0 μm)在VGS = 5 V时的峰值响应度为10.5 a /W,探测率为6.6 × 1010 Jones,在载流子收集和光电流产生方面优于较窄的几何形状。更窄的通道表现出更锐利的开关(SS ~ 10 V/dec),但由于吸收体积有限而降低了光电流增益。这些结果强调了信道宽度工程在调制响应性、开关效率和信噪特性方面的关键作用。该研究为优化用于高灵敏度紫外成像和环境传感应用的二氧化钛FET光电探测器提供了一种可扩展的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor

Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor

We report on the fabrication and UV photoresponse characteristics of TiO2-based phototransistors (TiO2–PTs) incorporating a TiO2/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined IV characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 1010 Jones at VGS = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO2-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信