{"title":"利用通道宽度优化的TiO2光电晶体管进行低能级紫外检测","authors":"Murat Artuc*, and , Selim Acar, ","doi":"10.1021/acsaelm.5c01360","DOIUrl":null,"url":null,"abstract":"<p >We report on the fabrication and UV photoresponse characteristics of TiO<sub>2</sub>-based phototransistors (TiO<sub>2</sub>–PTs) incorporating a TiO<sub>2</sub>/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined <i>I</i>–<i>V</i> characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 10<sup>10</sup> Jones at <i>V</i><sub>GS</sub> = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO<sub>2</sub>-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 18","pages":"8561–8570"},"PeriodicalIF":4.7000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor\",\"authors\":\"Murat Artuc*, and , Selim Acar, \",\"doi\":\"10.1021/acsaelm.5c01360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >We report on the fabrication and UV photoresponse characteristics of TiO<sub>2</sub>-based phototransistors (TiO<sub>2</sub>–PTs) incorporating a TiO<sub>2</sub>/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined <i>I</i>–<i>V</i> characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 10<sup>10</sup> Jones at <i>V</i><sub>GS</sub> = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO<sub>2</sub>-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 18\",\"pages\":\"8561–8570\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.5c01360\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c01360","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Low-Level UV Detection Using Channel-Width Optimized TiO2 Phototransistor
We report on the fabrication and UV photoresponse characteristics of TiO2-based phototransistors (TiO2–PTs) incorporating a TiO2/SiN active layer grown on Si substrates via electron beam evaporation. Devices with fixed channel length (∼2.5 μm) and varying channel widths (6.0, 7.5, and 9.0 μm) were fabricated to examine geometric effects on optoelectronic behavior. All PTs exhibit well-defined I–V characteristics and strong UV sensitivity under 18 μW, 385 nm illumination. The widest channel device (9.0 μm) demonstrated a peak responsivity of 10.5 A/W and a detectivity of 6.6 × 1010 Jones at VGS = 5 V, outperforming narrower geometries in terms of carrier collection and photocurrent generation. Narrower channels demonstrate sharper switching (SS ∼ 10 V/dec) but reduced photocurrent gain due to limited absorption volume. These results highlight the crucial role of channel-width engineering in modulating responsivity, switching efficiency, and signal-to-noise characteristics. This study provides a scalable pathway for optimizing TiO2-based FET photodetectors for high-sensitivity UV imaging and environmental sensing applications.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
Indexed/Abstracted:
Web of Science SCIE
Scopus
CAS
INSPEC
Portico