IEEE Open Journal of Nanotechnology最新文献

{"title":"A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory","authors":"Jiang Li;Yijun Cui;Chongyan Gu;Chenghua Wang;Weiqiang Liu;Fabrizio Lombardi","doi":"10.1109/OJNANO.2021.3058169","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3058169","url":null,"abstract":"The physical unclonable function (PUF) is a promising low-cost hardware security primitive. Recent advances in nanotechnology have provided new opportunities for nanoscale PUF circuits. The resistive random access memory (RRAM) is extensively used in nanoscale circuits due to its low cost, non-volatility and easy integration with CMOS. This paper proposes a novel tristate hybrid PUF (TH-PUF) design based on a one-transistor-one-RRAM (1T1R) cell; this cell can be configured into two weak PUFs and a strong PUF using few control signals. To assess the proposed PUF design, a compact RRAM model at UMC 65 nm technology is employed. Simulation results show that the proposed TH-PUF achieves good uniqueness, reliability as well as a higher gate usability compared with an entire CMOS PUFs. The number of challenge response pairs (CRPs) of the proposed TH-PUF is larger than other RRAM-based PUFs. Moreover, the TH-PUF is more resistant to a modeling machine learning attack than traditional PUF designs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"31-40"},"PeriodicalIF":1.7,"publicationDate":"2021-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3058169","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3493151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching","authors":"Daisuke Ohori;Takuya Fujii;Shuichi Noda;Wataru Mizubayashi;Kazuhiko Endo;Yao-Jen Lee;Jenn-Hwan Tarng;Yiming Li;Seiji Samukawa","doi":"10.1109/OJNANO.2021.3055150","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3055150","url":null,"abstract":"We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"26-30"},"PeriodicalIF":1.7,"publicationDate":"2021-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3055150","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3493495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micromanipulation With Microrobots","authors":"M Arifur Rahman;Aaron T. Ohta","doi":"10.1109/OJNANO.2021.3050496","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3050496","url":null,"abstract":"Microrobots are promising tools for applications that require micromanipulation, such as single-cell manipulation and surgery, tissue engineering, and desktop manufacturing. This paper briefly reviews common microrobot actuation mechanisms, then reviews current progress in several capabilities that are desirable for micromanipulation, with an emphasis on optothermal microrobots.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"8-15"},"PeriodicalIF":1.7,"publicationDate":"2021-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3050496","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3483699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2021 Index IEEE Open Journal of Nanotechnology Vol. 2","authors":"","doi":"10.1109/OJNANO.2022.3150710","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3150710","url":null,"abstract":"Presents the 2021 subject/author index for this publication.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"203-209"},"PeriodicalIF":1.7,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/9316416/09711750.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3514803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detection of Transferrin Receptor CD71 on a Shear Horizontal Surface Acoustic Wave Biosensor","authors":"Xue-Chang Lo;Ming-Tsang Lee;Da-Jeng Yao","doi":"10.1109/OJNANO.2020.3044352","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3044352","url":null,"abstract":"A semi-empirical model was applied to estimate the frequency shift of a shear-horizontal surface-acoustic-wave (SH-SAW) biosensor for detecting a disease-related biomarker antigen transferrin receptor (CD71) in the sample. In the simulation to investigate its sensitivity, a shift of the SH-SAW resonant frequency occurred by applying an incremental surface mass density change on the surface. The semi-empirical model was proposed and developed by using the experimental and numerical results to relate the concentration of the biomarker to the frequency shift. Results indicated that the thickness of the SiO2 guiding layer affects the sensitivity of SH-SAW sensing, and the dependence is non-monotonically. The SH-SAW sensor was used for specific detection of biotin at a varied concentration. With the concentration of the targeted antigen in the range 0.4 ∼4.2 μg/mL, a typical exponential relation was found between the quantitative target and the frequency shift. Measurement results showed that the mass-loading effect of the antibody-antigen has a reliable response with a sensitivity of 0.94 kHz/(μg/mL). Effects of the sample flow rate on the antigen- antibody interaction and thus the frequency shift of the SH-SAW sensor were also evaluated. It is demonstrated that the proposed model provides a useful approach to analyze effectively the frequency shift dependence on the concentration and the flow rates of sensed molecules in a flow-type SH-SAW sensor.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"1-7"},"PeriodicalIF":1.7,"publicationDate":"2020-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3044352","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3481185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory","authors":"Hyangwoo Kim;Hyeonsu Cho;Byoung Don Kong;Jin-Woo Kim;Meyya Meyyappan;Chang-Ki Baek","doi":"10.1109/OJNANO.2020.3042804","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3042804","url":null,"abstract":"Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10\u0000¹⁸\u0000 cm\u0000^-3\u0000, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to >10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F\u0000²\u0000 1T DRAM technology.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"1 ","pages":"163-169"},"PeriodicalIF":1.7,"publicationDate":"2020-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3042804","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3517176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nickel-Iron Alloy Nanoparticle Characteristics Pre- and Post-Reaction With Orange G","authors":"Shelby L. Foster;Prashant Acharya;Mojtaba Abolhassani;Skylar Watson;Sheldon Shinn;Lauren F. Greenlee","doi":"10.1109/OJNANO.2020.3042136","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3042136","url":null,"abstract":"Bimetallic nanoparticles comprised of iron and nickel were synthesized, characterized, and evaluated to optimize the ideal metal ratio for azo dye removal from water systems. Results show that changing the molar ratio of nickel to iron caused different removal rates, as well as the extent of overall elimination of azo dye from water. Lower molar ratios, from Ni\u0000₁\u0000Fe\u0000₁₀\u0000 to Ni\u0000_2.5\u0000Fe\u0000₁₀\u0000, exhibited a higher removal efficiency of 80-99%. Higher concentrations of Ni in the catalyst, from Ni\u0000₃\u0000Fe\u0000₁₀\u0000 to Ni\u0000₅\u0000Fe\u0000₁₀\u0000, resulted in 70-90% removal. The lower molar ratios of Ni exhibited a consistent removal rate of 0.11 g/L/min, while the higher molar ratios of Ni displayed varying removal rates of 0.1-0.05 g/L/min. A second order kinetic model was fit to the first twenty minutes of the reaction for all nickel to iron compositions, where there is a decrease in rate constant with an increase in molar ratio. During the last forty minutes of reaction, azo dye removal fit a zero order kinetic model. All as-synthesized nanoparticle samples were found to be structurally disordered based on the lack of distinct peaks in XRD spectra. Post-reaction samples were found to have Fe\u0000₂\u0000O\u0000₃\u0000 and FeOOH cubic peaks.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"16-25"},"PeriodicalIF":1.7,"publicationDate":"2020-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3042136","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3488258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synchronization in Quantum-Dot Cellular Automata Circuits and Systems","authors":"Orestis Liolis;Vassilios A. Mardiris;Georgios Ch. Sirakoulis;Ioannis G. Karafyllidis","doi":"10.1109/OJNANO.2020.3041399","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3041399","url":null,"abstract":"Signal synchronization of large scale Quantum-dot Cellular Automata (QCA) circuits is one of the most complex QCA design challenges. More specifically, the QCA circuits synchronization problem, especially in the large circuits, is characterized as rather complex due to technology constraints. In this paper, by extensively analyzing the most important properties of the signal synchronization problem in QCA circuits, we propose an efficient design methodology to tackle the problem, based on the well-known from computer science, Firing Squad Synchronization Problem (FSSP). Comparing FSSP with the QCA circuits synchronization problem many similarities can be found. Among the numerous FSSP's algorithmic solutions in literature, the Mazoyer algorithm has proven to be the most efficient one. In this paper, a novel design and implementation in QCA technology of this algorithm is presented. Moreover, by the appropriate modification of the Mazoyer algorithm, we are able to propose a generic synchronization design methodology for QCA circuits and systems. This method is enhanced by a novel freezing technique, that makes it applicable to any QCA circuit and system as manifested by our corresponding simulation results. The proposed synchronization methodology is a universal design tool, that can be applied to exiting designs without increasing the complexity.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"1 ","pages":"145-156"},"PeriodicalIF":1.7,"publicationDate":"2020-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3041399","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3514220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compact Graphene-Based Spiking Neural Network With Unsupervised Learning Capabilities","authors":"He Wang;Nicoleta Cucu Laurenciu;Yande Jiang;Sorin Dan Cotofana","doi":"10.1109/OJNANO.2020.3041198","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3041198","url":null,"abstract":"To fully unleash the potential of graphene-based devices for neuromorphic computing, we propose a graphene synapse and a graphene neuron that form together a basic Spiking Neural Network (SNN) unit, which can potentially be utilized to implement complex SNNs. Specifically, the proposed synapse enables two fundamental synaptic functionalities, i.e., Spike-Timing-Dependent Plasticity (STDP) and Long-Term Plasticity, and both Long-Term Potentiation (LTP) and Long-Term Depression (LTD) can be emulated with the same structure by properly adjusting its bias. The proposed neuron captures the essential Leaky Integrate and Fire spiking neuron behavior with post firing refractory interval. We demonstrate the proper operation of the graphene SNN unit by relying on a mixed simulation approach that embeds the high accuracy of atomistic level simulation of graphene structures conductance within the SPICE framework. Subsequently, we analyze the way graphene synaptic plasticity affects the behavior of a 2-layer SNN example consisting of 6 neurons and demonstrate that LTP significantly increases the number of firing events while LTD is diminishing them, as expected. To assess the plausibility of the graphene SNN reaction to input stimuli we simulate its behavior by means of both SPICE and NEST, a well established SNN simulation framework, and demonstrate that the obtained reactions, characterized in terms of total number of firing events and mean Inter-Spike Interval (ISI) length, are in close agreement, which clearly suggests that the proposed design exhibits a proper behavior. Further, we prove the unsupervised learning capabilities of the proposed design by considering a 2-layer SNN consisting of 30 neurons meant to recognize the characters “A,” “E,” “I,” “O,” and “U,” represented with a 5 by 5 black and white pixel matrix. The SPICE simulation results indicate that the graphene SNN is able to perform unsupervised character recognition associated learning and that its recognition ability is robust to input character variations. Finally, we note that our proposal results in a small real-estate footprint (max. 30 nm$^2$ are required by one graphene-based device) and operates at 200 mV supply voltage, which suggest its suitability for the design of large-scale energy-efficient computing systems.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"1 ","pages":"135-144"},"PeriodicalIF":1.7,"publicationDate":"2020-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3041198","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lightweight Configurable Ring Oscillator PUF Based on RRAM/CMOS Hybrid Circuits","authors":"Yijun Cui;Chenghua Wang;Weiqiang Liu;Chongyan Gu;Máire O’Neill;Fabrizio Lombardi","doi":"10.1109/OJNANO.2020.3040787","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3040787","url":null,"abstract":"Physical unclonable function (PUF) is a lightweight security primitive for energy constrained digital systems. As an enhanced design of conventional ring oscillator (RO) PUFs, configurable ring oscillator (CRO) PUFs improve the uniqueness and reliability compared with the conventional RO PUF designs. In typical CRO PUF designs, multiplexers (MUXs) are utilized as configurable components. In this paper, a hybrid nano-scale CRO (hn-CRO) PUF is proposed. The configurable components of the proposed hnCRO PUF are implemented by RRAMs. The delay elements are based on CMOS inverters. Compared with traditional CRO PUF designs, the proposed hn-CRO PUF is cost-efficient in terms of circuit density and gate per challenge response pair (CRP) bit. To validate the proposed hn-CRO PUF, the Monte Carlo simulation results of a compact RRAM model under UMC 65 nm technology are presented. The results show that the proposed hn-CRO PUF has a good uniqueness and low hardware consumption compared with the previous works.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"1 ","pages":"128-134"},"PeriodicalIF":1.7,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3040787","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3514219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}