IEEE Open Journal of Nanotechnology最新文献_第9页

Self-Powered Miniaturized Acceleration Sensor Based on Rationally Patterned Electrodes 基于合理模式电极的自供电微型加速度传感器

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-08-16 DOI: 10.1109/OJNANO.2021.3104961

Baocheng Wang;Xuelian Wei;Junhuan Chen;Zhihao Yuan;Yapeng Shi;Zhiyi Wu;Zhong Lin Wang

{"title":"Self-Powered Miniaturized Acceleration Sensor Based on Rationally Patterned Electrodes","authors":"Baocheng Wang;Xuelian Wei;Junhuan Chen;Zhihao Yuan;Yapeng Shi;Zhiyi Wu;Zhong Lin Wang","doi":"10.1109/OJNANO.2021.3104961","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3104961","url":null,"abstract":"Acceleration sensors have a wide variety of applications for industrial engineering, biology and navigation. However, passive sensing, narrow detection range, large size, and high manufacturing cost curb their further development. Here, we present a miniaturized acceleration sensor (MAS) with rationally patterned electrodes, based on the single electrode triboelectric mechanism, featuring small size, high accuracy, large detection scale, and environmental friendliness. A stainless-steel ball, as the moving part of the MAS, experiences physical movement that is converted into an electrical signal. Equipped with rationally patterned electrodes, the MAS retains the smallest size and lowest weight compared with the currently reported self-powered acceleration sensors. Benefiting from the voltage-relationship-based direction detection mechanism, eight directions can be identified by one TENG module. Consequently, rotated 22.5° relatively, two TENG modules enable the MAS to detect 16 directions. Moreover, accelerations ranging from 0.1 m/s\u00002\u0000 to 50 m/s\u00002\u0000 can be identified according to the relationship of response time and accelerations in the horizontal direction. The relationship is obtained through the measurements of the sum of output voltages (\u0000<italic>VSOC\u0000) for the four bottom electrodes with varying accelerations. In addition, no distinct decrease of \u0000<italic>VSOC\u0000 is observed after continuously operating for 2000 circles, presenting excellent robustness. Hence, this cost-effective and rationally patterned MAS reveals great potential for human machine interaction, VR/AR (virtual/augmented reality), sports training, and smart city.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"78-85"},"PeriodicalIF":1.7,"publicationDate":"2021-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3104961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3482801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Reconfigurable Graphene-Based Spiking Neural Network Architecture 一种基于可重构石墨烯的峰值神经网络结构

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-07-07 DOI: 10.1109/OJNANO.2021.3094761

He Wang;Nicoleta Cucu Laurenciu;Sorin Dan Cotofana

{"title":"A Reconfigurable Graphene-Based Spiking Neural Network Architecture","authors":"He Wang;Nicoleta Cucu Laurenciu;Sorin Dan Cotofana","doi":"10.1109/OJNANO.2021.3094761","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3094761","url":null,"abstract":"In the paper we propose a reconfigurable graphene-based Spiking Neural Network (SNN) architecture and a training methodology for initial synaptic weight values determination. The proposed graphene-based platform is flexible, comprising a programmable synaptic array which can be configured for different initial synaptic weights and plasticity functionalities and a spiking neuronal array, onto which various neural network structures can be mapped according to the application requirements and constraints. To demonstrate the validity of the synaptic weights training methodology and the suitability of the proposed SNN architecture for practical utilization, we consider character recognition and edge detection applications. In each case, the graphene-based platform is configured as per the application tailored SNN topology and initial state and SPICE simulated to evaluate its reaction to the applied input stimuli. For the first application, a 2-layer SNN is used to perform character recognition for 5 vowels. Our simulation indicates that the graphene-based SNN can achieve comparable recognition accuracy with the one delivered by a functionally equivalent Artificial Neural Network. Further, we reconfigure the architecture for a 3-layer SNN to perform edge detection on 2 grayscale images. SPICE simulation results indicate that the edge extraction results are close agreement with the one produced by classical edge detection operators. Our results suggest the feasibility and flexibility of the proposed approach for various application purposes. Moreover, the utilized graphene-based synapses and neurons operate at low supply voltage, consume low energy per spike, and exhibit small footprints, which are desired properties for largescale energy-efficient implementations.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"59-71"},"PeriodicalIF":1.7,"publicationDate":"2021-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3094761","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3482962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Inflammation Endows Benign Prostatic Hyperplasia Cells With Similar Physical Properties to Prostate Cancer Cells 炎症赋予良性前列腺增生细胞与前列腺癌细胞相似的物理特性

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-04-08 DOI: 10.1109/OJNANO.2021.3071720

Na Liu;Ziheng Chen;Da Luo;Qiuhong Zhao;Tao Yue;Yuanyuan Liu;Xiaomao Li;Chen Yang;Haowen Jiang;Wen J. Li

{"title":"Inflammation Endows Benign Prostatic Hyperplasia Cells With Similar Physical Properties to Prostate Cancer Cells","authors":"Na Liu;Ziheng Chen;Da Luo;Qiuhong Zhao;Tao Yue;Yuanyuan Liu;Xiaomao Li;Chen Yang;Haowen Jiang;Wen J. Li","doi":"10.1109/OJNANO.2021.3071720","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3071720","url":null,"abstract":"Although inflammation is considered an important factor for promoting carcinogenesis, further evidence is still needed to draw definitive conclusions on its role in prostate cancer (PCa) development and progression. This study characterized the radius, specific membrane capacitance (SMC), and Youngs modulus of 20 patient-derived prostate cells, including 6 patients diagnosed with benign prostatic hyperplasia (BPH), 5 patients diagnosed with BPH accompanied with chronic inflammation (BCI), and 9 patients diagnosed with PCa. The characterized results show that the three groups of cells possess approximate radius value. Both BCI and PCa cells show larger SMC values than BPH cells. Only PCa cells possess lower Youngs modulus than BPH cells, the stiffness of which is approximate to that of BCI cells. Additionally, experiments have testified that inflammatory cytokine, (i.e. TNF-\u0000<inline-formula><tex-math>$alpha$</tex-math></inline-formula>\u0000) can induce the increase of cellular SMC values. The finds demonstrate that inflammation is linked to cancer promotion process and accompanied with cellular biophysical changes, providing a new insight into the effects of inflammation in promoting PCa.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"52-58"},"PeriodicalIF":1.7,"publicationDate":"2021-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3071720","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS₂ Heterojunction 等离子体增强黑磷-二硫化钼异质结的光伏特性

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-02-26 DOI: 10.1109/OJNANO.2021.3062495

Hou Chaojian;Li Bo;Li Qingwei;Yang Lijun;Wang Yang;Yang Zhan;Dong Lixin

{"title":"Plasmon-Enhanced Photovoltaic Characteristics of Black Phosphorus-MoS2 Heterojunction","authors":"Hou Chaojian;Li Bo;Li Qingwei;Yang Lijun;Wang Yang;Yang Zhan;Dong Lixin","doi":"10.1109/OJNANO.2021.3062495","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3062495","url":null,"abstract":"Van der Waals p-n heterojunctions, consist of atomically thin two-dimensional (2D) layer semiconductors, have opened a promising avenue for the realization of ultrathin and ultralight photovoltaic solar cells. This feature enables them particularly be suitable as the micro/nanoscale solar energy-conversion units integrated in wireless power supply micro/nano-systems. However, solar energy harvest in these heterojunctions is hindered by inherent weak interlayer interaction at such ultrathin thickness. Herein, a novel integrated strategy by embedding metallic plasmonic pentamers optical nano-antenna array (ONAA) onto overlap region of black phosphorus-molybdenum disulfide (BP-MoS\u00002\u0000) p-n heterojunction is firstly exploited under both a near-infrared laser (λ = 830 nm) and standardized AM1.5G solar irradiation. Results show that profiting from plasmon-induced “hot” electrons and thermal field generating from gigantic near-field enhancement in 15 nm-ultrashort nanogap ONAAs and high intrinsic build-in field in atomically overlap region, this integrated configuration displays enhanced photovoltaic properties. Maximum short-circuits current (I\u0000sc\u0000 = 0.53 μA) and open circuit voltage (V\u0000oc\u0000 = 0.2 V) had been attained. Additional fill factor of 14% and double power conversion efficiencies amplification are measured via comparison of device without/with ONAAs. These findings strongly demonstrate this reliable enhancement strategy with integration of plasmonic physics into 2D heterojunctions for realizing energy harvesting unit in the wireless power supply micro/nano-systems.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"41-51"},"PeriodicalIF":1.7,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3062495","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory 使用非易失性存储器的可配置三态混合方案的物理不可克隆函数

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-02-09 DOI: 10.1109/OJNANO.2021.3058169

Jiang Li;Yijun Cui;Chongyan Gu;Chenghua Wang;Weiqiang Liu;Fabrizio Lombardi

引用次数: 7

High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching 原子层无缺陷无粗糙度刻蚀制备高电子迁移率锗FinFET

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-01-29 DOI: 10.1109/OJNANO.2021.3055150

Daisuke Ohori;Takuya Fujii;Shuichi Noda;Wataru Mizubayashi;Kazuhiko Endo;Yao-Jen Lee;Jenn-Hwan Tarng;Yiming Li;Seiji Samukawa

{"title":"High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching","authors":"Daisuke Ohori;Takuya Fujii;Shuichi Noda;Wataru Mizubayashi;Kazuhiko Endo;Yao-Jen Lee;Jenn-Hwan Tarng;Yiming Li;Seiji Samukawa","doi":"10.1109/OJNANO.2021.3055150","DOIUrl":"https://doi.org/10.1109/OJNANO.2021.3055150","url":null,"abstract":"We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"26-30"},"PeriodicalIF":1.7,"publicationDate":"2021-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2021.3055150","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3493495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Micromanipulation With Microrobots 用微型机器人进行微操作

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-01-12 DOI: 10.1109/OJNANO.2021.3050496

M Arifur Rahman;Aaron T. Ohta

引用次数: 0

2021 Index IEEE Open Journal of Nanotechnology Vol. 2 2021索引IEEE纳米技术开放杂志第2卷

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2021-01-01 DOI: 10.1109/OJNANO.2022.3150710

引用次数: 0

Detection of Transferrin Receptor CD71 on a Shear Horizontal Surface Acoustic Wave Biosensor 剪切水平表面声波生物传感器对转铁蛋白受体CD71的检测

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2020-12-14 DOI: 10.1109/OJNANO.2020.3044352

Xue-Chang Lo;Ming-Tsang Lee;Da-Jeng Yao

{"title":"Detection of Transferrin Receptor CD71 on a Shear Horizontal Surface Acoustic Wave Biosensor","authors":"Xue-Chang Lo;Ming-Tsang Lee;Da-Jeng Yao","doi":"10.1109/OJNANO.2020.3044352","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3044352","url":null,"abstract":"A semi-empirical model was applied to estimate the frequency shift of a shear-horizontal surface-acoustic-wave (SH-SAW) biosensor for detecting a disease-related biomarker antigen transferrin receptor (CD71) in the sample. In the simulation to investigate its sensitivity, a shift of the SH-SAW resonant frequency occurred by applying an incremental surface mass density change on the surface. The semi-empirical model was proposed and developed by using the experimental and numerical results to relate the concentration of the biomarker to the frequency shift. Results indicated that the thickness of the SiO2 guiding layer affects the sensitivity of SH-SAW sensing, and the dependence is non-monotonically. The SH-SAW sensor was used for specific detection of biotin at a varied concentration. With the concentration of the targeted antigen in the range 0.4 ∼4.2 μg/mL, a typical exponential relation was found between the quantitative target and the frequency shift. Measurement results showed that the mass-loading effect of the antibody-antigen has a reliable response with a sensitivity of 0.94 kHz/(μg/mL). Effects of the sample flow rate on the antigen- antibody interaction and thus the frequency shift of the SH-SAW sensor were also evaluated. It is demonstrated that the proposed model provides a useful approach to analyze effectively the frequency shift dependence on the concentration and the flow rates of sensed molecules in a flow-type SH-SAW sensor.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"2 ","pages":"1-7"},"PeriodicalIF":1.7,"publicationDate":"2020-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3044352","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3481185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory 双端晶闸管随机存取存储器的电气特性和数据保持特性

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2020-12-07 DOI: 10.1109/OJNANO.2020.3042804

Hyangwoo Kim;Hyeonsu Cho;Byoung Don Kong;Jin-Woo Kim;Meyya Meyyappan;Chang-Ki Baek

{"title":"Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory","authors":"Hyangwoo Kim;Hyeonsu Cho;Byoung Don Kong;Jin-Woo Kim;Meyya Meyyappan;Chang-Ki Baek","doi":"10.1109/OJNANO.2020.3042804","DOIUrl":"https://doi.org/10.1109/OJNANO.2020.3042804","url":null,"abstract":"Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 10\u000018\u0000 cm\u0000-3\u0000, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to >10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F\u00002\u0000 1T DRAM technology.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"1 ","pages":"163-169"},"PeriodicalIF":1.7,"publicationDate":"2020-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/OJNANO.2020.3042804","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3517176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1