互补和1D1R-1R1D RRAM结构对大型交叉棒电阻存储器性能的增强

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Khitem Lahbacha;Fakhreddine Zayer;Hamdi Belgacem;Wael Dghais;Antonio Maffucci
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引用次数: 0

摘要

本文提出了新的解决方案,以提高电阻随机存取存储器的交叉棒阵列的信号和热完整性,这是最有前途的3D单片集成技术之一。由于写入过程中功率耗散产生的热量,这些结构受到电热问题的困扰。本文探索了基于新架构和新材料的新颖解决方案,用于管理与互连沿线的电压降和存储单元之间的热串扰相关的问题。所分析的忆阻器是1二极管- 1电阻存储器。给出了两种结构的解决方案,一种是反向结构,一种是互补的电阻开关结构。与传统架构相比,它们都减少了应用偏置的层数。以一个4 × 4 × 4阵列为例,将这些新结构的电热性能与参考结构进行了比较。为此,实现了一个全三维数值多物理场模型,并成功地与文献中的其他模型进行了比较。分析了改变互连材料的可能性。性能分析的结果清楚地显示了迁移到这些新架构以及选择新材料的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic integration. These structures suffer from electrothermal issues, due to the heat generated by the power dissipation during the write process. This paper explores novel solutions based on new architectures and materials, for managing the issues related to the voltage drop along the interconnects and to thermal crosstalk between memory cells. The analyzed memristor is the 1 Diode - 1 Resistor memory. The two architectural solutions are given by a reverse architecture and a complementary resistive switching one. Compared to conventional architectures, both of them are also reducing the number of layers where the bias is applied. The electrothermal performance of these new structures is compared to that of the reference one, for a case-study given by a 4 × 4 × 4 array. To this end, a full-3D numerical Multiphysics model is implemented and successfully compared against other models in literature. The possibility of changing the interconnect materials is also analyzed. The results of this performance analysis clearly show the benefits of moving to these novel architectures, together with the choice of new materials.
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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