IEEE Open Journal of Nanotechnology最新文献_第3页

Bismuth-Immobilized Optical Fiber-Based SPR Nanosensor for Detection of Zinc Nitrate Contamination in Aquaculture Industry 基于铋固定化光纤的 SPR 纳米传感器用于检测水产养殖业中的硝酸锌污染

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-10-14 DOI: 10.1109/OJNANO.2024.3479869

Yesudasu Vasimalla;Nasih Hma Salah;Baljinder Kaur;Hogr M. Rasul;Chella Santhosh;Ramachandran Balaji;S.R. Srither;Santosh Kumar

{"title":"Bismuth-Immobilized Optical Fiber-Based SPR Nanosensor for Detection of Zinc Nitrate Contamination in Aquaculture Industry","authors":"Yesudasu Vasimalla;Nasih Hma Salah;Baljinder Kaur;Hogr M. Rasul;Chella Santhosh;Ramachandran Balaji;S.R. Srither;Santosh Kumar","doi":"10.1109/OJNANO.2024.3479869","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3479869","url":null,"abstract":"Zinc nitrate, a toxic substance usually found in industrial waste and agricultural residues, poses a serious threat to the aquaculture industry due to the poor water quality and harmful aquatic life. Effective monitoring of zinc nitrate contamination is essential to protect aquatic ecosystems and also ensures the safety of aquaculture products. This study presents a bismuth-immobilized optical fiber-based surface plasmon resonance (SPR) biosensor for the rapid detection of zinc nitrate contamination. The sensor design incorporates a ZBLAN core, NaF cladding, silver (Ag) as a plasmonic metal, and bismuth (Bi) to enhance detection sensitivity. In our work, we compared the sensor performance of the proposed bismuth-immobilized SPR biosensor with the conventional Ag-based sensor design. The performance of the proposed Ag-Bi sensor model is compared with the conventional Ag-based sensor. To improve the sensitivity and FOM, Ag layer thickness is varied between 50 and 80 nm with respect to the zinc nitrate concentrations of 0%, 1%, and 5%. Using the angular interrogation method, the resonance wavelength shifts are correlated to changes in refractive index (RI). The Bi-immobilized Ag layer achieved a maximum sensitivity of 5680 nm/RIU at 5% zinc nitrate concentration and an FOM of 95.2381 RIU\u0000−1\u0000 at 1%. While conventional Ag-based sensors attained a maximum sensitivity of 5240 nm/RIU and an FOM of 90.345 RIU\u0000−1\u0000 at 80 nm Ag thickness. The above results demonstrate that the Ag-Bi layer SPR biosensor is highly suitable for simultaneously detecting zinc nitrate and other heavy metal contaminants in water, providing a cost-effective solution for heavy metal contamination detection in aquatic industry.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"80-88"},"PeriodicalIF":1.8,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10715639","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-Principles Simulation of the Interaction Between DNA Nucleotides and One-Dimensional Carbon Chain in Electrical Based Sequencing 电测序中 DNA 核苷酸与一维碳链相互作用的第一原理模拟

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-09-03 DOI: 10.1109/OJNANO.2024.3451954

Zeina Salman;Jin-Woo Kim;Steve Tung

{"title":"First-Principles Simulation of the Interaction Between DNA Nucleotides and One-Dimensional Carbon Chain in Electrical Based Sequencing","authors":"Zeina Salman;Jin-Woo Kim;Steve Tung","doi":"10.1109/OJNANO.2024.3451954","DOIUrl":"10.1109/OJNANO.2024.3451954","url":null,"abstract":"Electrical DNA sequencing has attracted significant attention in recent years due to its simplified sequencing protocol, compact sequencing system, and relatively low sequencing cost. In the design and fabrication of the sequencing device, carbon-based nanomaterials such as graphene have been explored as a promising sensing material that provides an excellent combination of spatial resolution and base specificity. Using first-principles simulation, we determined the effect on the electrical conductivity of a one-dimensional carbon chain due to the presence of four DNA bases. The simulation results indicate that the interaction between the carbon chain and different DNA bases leads to different levels of conductivity change in the carbon chain. Quantitatively, base A is the most difficult base to detect due to its relatively small current change. Furthermore, the results also show that the relative orientation of the bases with respect to the carbon chain can affect the induced current change in the chain. This information can be used to optimize the structural design of future sequencing devices. Collectively, the first-principles simulation results suggest the integration of a one-dimensional carbon chain with supporting nanofluidic designs can provide a viable approach towards the development of a compact, robust, and high-resolution DNA sequencing system.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"39-46"},"PeriodicalIF":1.8,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663936","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Optical and Infrared Activity of Nanosphere Dimers Attributed to Dimer Geometry 二聚体几何形状增强了纳米球二聚体的光学和红外活性

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-08-05 DOI: 10.1109/OJNANO.2024.3437164

D. Keith Roper;Jin-Woo Kim;Ricardo R. Romo;Joseph Batta-Mpouma

{"title":"Enhanced Optical and Infrared Activity of Nanosphere Dimers Attributed to Dimer Geometry","authors":"D. Keith Roper;Jin-Woo Kim;Ricardo R. Romo;Joseph Batta-Mpouma","doi":"10.1109/OJNANO.2024.3437164","DOIUrl":"10.1109/OJNANO.2024.3437164","url":null,"abstract":"Enhanced optical and infrared activity of subwavelength metal nanoparticles is key to their use in optoelectronics, spectroscopy, and sensing. The present work compared spectra of nanosphere dimers merged by centrifuging gold nanospheres with corresponding simulated nanoscale dimers. Geometric features of the nanosphere dimers were related to corresponding optical and near-infrared activity through simulation. Differences in optical and infrared activity of the nanosphere dimers were largely attributable to changes in the radius of the nanosphere and the radius of the conductive junction between merged nanospheres. The features observed in the experimental spectra were attributed to a select number of dimers exhibiting predominantly optical and infrared activity, consistent with observations made in the corresponding transmission electron microscope image. The preparation and simulation methods in the present work appear useful to guide design, fabrication, and implementation of sustainably-synthesized nanosphere dimers with desired optical features for optoelectronic, spectroscopic, and sensing applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"47-56"},"PeriodicalIF":1.8,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10623222","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141946006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fully 3D Printed Miniaturized Electrochemical Platform With Plug-and-Play Graphitized Electrodes: Exhaustively Validated for Dopamine Sensing 完全 3D 打印的微型电化学平台，配有即插即用的石墨化电极：多巴胺传感的全面验证

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-06-25 DOI: 10.1109/OJNANO.2024.3418840

K S Jaya Lakshmi;Ramya K;Khairunnisa Amreen;Sanket Goel

{"title":"Fully 3D Printed Miniaturized Electrochemical Platform With Plug-and-Play Graphitized Electrodes: Exhaustively Validated for Dopamine Sensing","authors":"K S Jaya Lakshmi;Ramya K;Khairunnisa Amreen;Sanket Goel","doi":"10.1109/OJNANO.2024.3418840","DOIUrl":"10.1109/OJNANO.2024.3418840","url":null,"abstract":"Globally, a contemporary trend is towards the realization of sustainable, eco-friendly, miniaturized, and cost-effective sensors. This work focuses on developing a plug-and-play device using inexpensive and biodegradable UV resin fed 3D printing stereolithography (SLA) to produce miniaturized microfluidic platforms for electrochemical sensing. The device consists of three compartments designed to accommodate the 3-electrodes according to the need. SLA 3D printing technique solves these restrictions, making sensors reliable, repeatable, and durable. For electrochemical detection at the point of need or as a lab-on-chip (LoC) platform with minimal sample volume, this work attempts to construct a flexible as well as non-flexible microelectrode setup. The analytical capability of the platform is examined by quantifying nanomolar levels of dopamine in human body fluids. Chronoamperometry and cyclic voltammetry on surface-treated graphene-poly lactic acid (g-PLA) microelectrodes modified with gold nanoparticles are carried out utilizing a handheld potentiostat. The designed device has a linear range of 0.1 to 120 nM with limit of detection and limit of quantification of 0.083 and 0.27 nM, respectively. Various electrode characterizations, including scanning electron microscopy, energy-dispersive X-ray spectroscopy, and electrochemical impedance spectroscopy are carried out. The developed device is finally tested for real-time analysis on human blood and serum samples.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"30-38"},"PeriodicalIF":1.8,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10571366","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pseudo-Random Number Generators for Stochastic Computing (SC): Design and Analysis 用于随机计算 (SC) 的伪随机数发生器：设计与分析

IF 1.8

IEEE Open Journal of Nanotechnology Pub Date : 2024-06-14 DOI: 10.1109/OJNANO.2024.3414955

Pilin Junsangsri;Fabrizio Lombardi

{"title":"Pseudo-Random Number Generators for Stochastic Computing (SC): Design and Analysis","authors":"Pilin Junsangsri;Fabrizio Lombardi","doi":"10.1109/OJNANO.2024.3414955","DOIUrl":"10.1109/OJNANO.2024.3414955","url":null,"abstract":"In most nanoscale stochastic computing designs, the Stochastic Number Generator (SNG) circuit is complex and occupies a significant area because each copy of a stochastic variable requires its own dedicated (and independent) stochastic number generator. This article introduces a novel approach for pseudo-random number generators (RNGs) to be used in SNGs. The proposed RNG design leverages the inherent randomness between each bit of data to generate larger sets of random numbers by concatenating the modules of the customized linear feedback shift registers. To efficiently generate random data, a plane of RNGs (comprising of multiple modules) is introduced. A sliding window approach is employed for reading data in both the horizontal and vertical directions; therefore, the sets of random numbers are generated by doubling the datasets and inverting the duplicated datasets. Flip-Flops are utilized to isolate the datasets and diminish correlation among them. This paper explores variations in parameters to evaluate their impact on the performance of the proposed design. A comparative analysis between the proposed design and existing SNG designs from technical literature is presented. The results show that the proposed nanoscale RNG design offers many advantages such as small area per RNG, low power operation, generated large datasets and higher accuracy.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"57-67"},"PeriodicalIF":1.8,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10557718","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141945915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Performance Analysis of ISFET Using Various Oxide Materials for Biosensing Applications 使用各种氧化物材料的 ISFET 在生物传感应用中的设计和性能分析

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-06-04 DOI: 10.1109/OJNANO.2024.3408845

Sankararao Majji;Asisa Kumar Panigrahy;Depuru Shobha Rani;Muralidhar Nayak Bhukya;Chandra Sekhar Dash

{"title":"Design and Performance Analysis of ISFET Using Various Oxide Materials for Biosensing Applications","authors":"Sankararao Majji;Asisa Kumar Panigrahy;Depuru Shobha Rani;Muralidhar Nayak Bhukya;Chandra Sekhar Dash","doi":"10.1109/OJNANO.2024.3408845","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3408845","url":null,"abstract":"The healthcare industry is constantly changing because of technological breakthroughs that spur new methods of diagnosing and treating illnesses. This study investigates the development of Ion Sensitive Field Effect Transistor (ISFET) sensors for DNA-based blood cancer diagnosis. This work presents the design of a two-dimensional ion-sensitive field-effect transistor. Concentration fluctuations and transfer characteristics with different oxides are studied using blood from two electrolyte solutions. It is possible to evaluate how the modeled device can be utilized as a pH sensor or a biosensor in healthcare applications by looking at how the pH changes for different oxides. Additionally, several oxides were examined in the simulated ISFET devices' output characteristics. Blood is the electrolyte to study the device's sensitivity for different oxides. When pH 7.4 is considered, SiO\u00002\u0000 oxide is significantly more sensitive than other oxides. The resulting 2D-ISFET exhibits remarkable blood electrolyte sensitivity and holds potential as a quick detection tool for blood cancer. The results show that the ISFET possesses drain-induced barrier lowering (DIBL), greater ON-current \u0000<italic>(ION\u0000) and switching ratio (\u0000<italic>ION/IOFF\u0000), and decreased subthreshold swing (SS). The pH sensor's sensitivity and the suggested equipment can detect up to 30 fg/mL of blood cancer biomarkers. An important development in technology-driven healthcare is the emergence of DNA-based blood cancer detection utilizing ISFET sensors. This opens up new avenues for improving cancer diagnosis and patient outcomes.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"23-29"},"PeriodicalIF":1.7,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10547399","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141334029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress 栅极偏压应力下超标量 a-IGZO 薄膜晶体管的温度依赖性氢调制

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-04-08 DOI: 10.1109/OJNANO.2024.3386123

Muhammad Aslam;Shu-Wei Chang;Min-Hui Chuang;Yi-Ho Chen;Yao-Jen Lee;Yiming Li

{"title":"Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress","authors":"Muhammad Aslam;Shu-Wei Chang;Min-Hui Chuang;Yi-Ho Chen;Yao-Jen Lee;Yiming Li","doi":"10.1109/OJNANO.2024.3386123","DOIUrl":"10.1109/OJNANO.2024.3386123","url":null,"abstract":"Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive V\u0000th\u0000 shift to negative V\u0000th\u0000 shift (ΔV\u0000th\u0000, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔV\u0000th\u0000 shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔV\u0000th\u0000 shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"9-16"},"PeriodicalIF":1.7,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10494359","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140563451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications 考虑到神经形态应用中周期间变化的叠层纳米片架构 FeFET 突触的分析与设计

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-03-10 DOI: 10.1109/OJNANO.2024.3399559

Heng Li Lin;Pin Su

{"title":"Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications","authors":"Heng Li Lin;Pin Su","doi":"10.1109/OJNANO.2024.3399559","DOIUrl":"10.1109/OJNANO.2024.3399559","url":null,"abstract":"Using extensive Monte-Carlo simulations with a nucleation-limited-switching (NLS) ferroelectric model and considering cycle-to-cycle variations, this paper constructs and analyzes the intrinsic conductance (G\u0000DS\u0000) response of stacked-nanosheet FeFET synapses with emphasis on the challenging identical-pulse stimulation. Our study indicates that the interlayer oxide thickness of the FeFET and the saturation polarization of the ferroelectric are crucial to the linearity and symmetry of the intrinsic G\u0000DS\u0000 response. With the stacked-nanosheet architecture, the maximum-to-minimum conductance ratio in the G\u0000DS\u0000 response can be boosted by increasing the number of channel tiers without footprint penalty. For a stacked-nanosheet FeFET synapse with an area ratio effect, the G\u0000DS\u0000 response can be further engineered by varying the tier number. In addition, the immunity to cycle-to-cycle variations and the noise margin for each state in the G\u0000DS\u0000 response can also be improved by increasing the number of tiers. Our study may provide insights for future FeFET synapse design for analog computing.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"17-22"},"PeriodicalIF":1.7,"publicationDate":"2024-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10528861","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Open Journal of Nanotechnology Information for Authors IEEE 纳米技术开放期刊作者信息

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-03-06 DOI: 10.1109/OJNANO.2024.3362551

引用次数: 0

Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime 分析 GAA 结较少的 NS FET 在 30 纳米工艺下的模拟和射频应用

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2024-02-13 DOI: 10.1109/OJNANO.2024.3365173

Asisa Kumar Panigrahy;Sudheer Hanumanthakari;Shridhar B. Devamane;Shruti Bhargava Choubey;M. Prasad;D. Somasundaram;N. Kumareshan;N. Arun Vignesh;Gnanasaravanan Subramaniam;Durga Prakash M;Raghunandan Swain

{"title":"Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime","authors":"Asisa Kumar Panigrahy;Sudheer Hanumanthakari;Shridhar B. Devamane;Shruti Bhargava Choubey;M. Prasad;D. Somasundaram;N. Kumareshan;N. Arun Vignesh;Gnanasaravanan Subramaniam;Durga Prakash M;Raghunandan Swain","doi":"10.1109/OJNANO.2024.3365173","DOIUrl":"10.1109/OJNANO.2024.3365173","url":null,"abstract":"This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO\u00002\u0000 and HfO\u00002\u0000, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the \u0000<italic>ION\u0000, \u0000<italic>IOFF\u0000, \u0000<italic>ION/ IOFF\u0000, threshold voltage, DIBL, gain parameters (g\u0000m\u0000, g\u0000d\u0000, A\u0000v\u0000), gate capacitance, and cut-off frequency (\u0000<italic>fT\u0000). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10\u0000–18\u0000, according to the simulation results. A transconductance (g\u0000m\u0000) value of 21 µS and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"1-8"},"PeriodicalIF":1.7,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10433722","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0