IEEE Open Journal of Nanotechnology最新文献

{"title":"Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime","authors":"Asisa Kumar Panigrahy;Sudheer Hanumanthakari;Shridhar B. Devamane;Shruti Bhargava Choubey;M. Prasad;D. Somasundaram;N. Kumareshan;N. Arun Vignesh;Gnanasaravanan Subramaniam;Durga Prakash M;Raghunandan Swain","doi":"10.1109/OJNANO.2024.3365173","DOIUrl":"10.1109/OJNANO.2024.3365173","url":null,"abstract":"This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO\u0000₂\u0000 and HfO\u0000₂\u0000, each having a thickness of 1 nm. The performance of both the classical and quantum models of the GAA nanosheet device is evaluated using the visual TCAD tool, which measures the \u0000<italic>I_ON</i>\u0000, \u0000<italic>I_OFF</i>\u0000, \u0000<italic>I_ON/ I_OFF</i>\u0000, threshold voltage, DIBL, gain parameters (g\u0000_m\u0000, g\u0000_d\u0000, A\u0000_v\u0000), gate capacitance, and cut-off frequency (\u0000<italic>f_T</i>\u0000). The device is suited for applications needing rapid switching since it has a low gate capacitance of the order of 10\u0000^–18\u0000, according to the simulation results. A transconductance (g\u0000_m\u0000) value of 21 µS and an impressive cut-off frequency of 9.03 GHz are displayed during device analysis. A detailed investigation has also been done into the P-type device response for the same device. Finally, the proposed GAA nanosheet device is used in the inverter model. The NSFET-based inverter, although having higher gate capacitance, has the shortest propagation latency.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"5 ","pages":"1-8"},"PeriodicalIF":1.7,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10433722","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors","authors":"Sekhar Reddy Kola;Yiming Li","doi":"10.1109/OJNANO.2023.3335942","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3335942","url":null,"abstract":"Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking \u0000<italic>n</i>\u0000-FET on top of \u0000<italic>p</i>\u0000-FET. Among the six factors, NS thickness (\u0000<italic>T_NS</i>\u0000), NS width (\u0000<italic>W_NS</i>\u0000), and gate length (\u0000<italic>L_G</i>\u0000) are identified as crucial factors contributing to large variations in device characteristics. The \u0000<italic>p</i>\u0000-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"229-238"},"PeriodicalIF":1.7,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10330087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138739547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Specific PM2.5 Contaminant on Monolayer/Bilayer ArGNR","authors":"Kamal Solanki;Swati Verma;Punya Prasanna Paltani;Manoj Kumar Majumder","doi":"10.1109/OJNANO.2023.3336366","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3336366","url":null,"abstract":"Elevated Particular Matter (PM\u0000_2.5\u0000) may increase the risk of acquiring hazardous health implications, and hence high-performance monitoring of minuscule contaminants might protect people's health. The adsorption behaviour of specific PM\u0000_2.5\u0000 contaminants on doped/undoped monolayer/bilayer armchair graphene nanoribbon (ArGNR) is analyzed using a hydrogen-passivated layer. By using the first-principles density functional theory (DFT), the influence of doping on the ArGNR substrate is carefully examined. Due to the fragile surface atoms, monolayer ArGNR exhibits roughly twice the adsorption energy compared to the bilayer configuration. However, the specific PM\u0000_2.5\u0000 contaminants, the CH\u0000₄\u0000, NH\u0000₃\u0000, and NO\u0000₂\u0000 molecules demonstrate chemisorption of −2 eV,−2.95 eV, and −4 eV, with extremely less bandgap variation of −65% to −70% and −100% and a gigantic amount of charge transfer of +0.153 eV, +0.156 eV and +0.010 eV, and the DOS peaks at B site are \u0000<inline-formula><tex-math>$ pm 110,text{eV}, pm 65{rm{ eV}}, pm 80{rm{ eV}}$</tex-math></inline-formula>\u0000, and at the P site are \u0000<inline-formula><tex-math>$ pm 130$</tex-math></inline-formula>\u0000 eV, \u0000<inline-formula><tex-math>$ pm 300$</tex-math></inline-formula>\u0000 eV and \u0000<inline-formula><tex-math>$ pm 80$</tex-math></inline-formula>\u0000 eV on boron-phosphorus (BP) co-doped monolayer ArGNR, for CH\u0000₄\u0000, NH\u0000_3,\u0000 and NO\u0000₂\u0000, respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"215-228"},"PeriodicalIF":1.7,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10328676","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138558073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observations of Aharonov-Bohm Conductance Oscillations in CVD-Grown Graphene Rings at 4K","authors":"Zitao Tang;Siwei Chen;Cynthia I. Osuala;Abdus Salam Sarkar;Grzegorz Hader;Aron Cummings;Stefan Strauf;Chunlei Qu;Eui-Hyeok Yang","doi":"10.1109/OJNANO.2023.3331974","DOIUrl":"10.1109/OJNANO.2023.3331974","url":null,"abstract":"We present the observations of Aharonov-Bohm (AB) oscillations in chemical vapor deposition (CVD)-grown graphene rings via magnetotransport measurements at 4K under out-of-plane external magnetic fields up to +/−2.1 T. Incorporating a baseline subtraction of the original conductance data allowed us to observe two-terminal conductance oscillations with a spacing of ΔB\u0000_AB\u0000 of 3.66 to 32.9 mT from the ring with an inner radius of 200 nm and arm-width of 400 nm, and spacing of ΔB\u0000_AB\u0000 from 2.1 mT to 8.2 mT from the ring with an inner radius of 400 nm and an arm-width of 400 nm. The fast-Fourier transform (FFT) data showed AB oscillation periods, with the interval of the \u0000<italic>h/e</i>\u0000 fundamental mode given by 30/T to 273/T for the ring with the inner radius of 200 nm and arm-width of 400 nm, and 122/T to 488/T for the ring with the inner radius of 400 nm. The broad spreading of FFT peaks is due to the aspect ratio of the inner radius \u0000<italic>r₁</i>\u0000 and the width \u0000<italic>w</i>\u0000 of the ring, \u0000<italic>r/w</i>\u0000 ∼ 1. Systematic numerical simulations were performed to elucidate the relation between the AB oscillation frequency and the geometry of the ring. This work shows AB oscillations in CVD-grown graphene rings at an elevated temperature (4K).","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"208-214"},"PeriodicalIF":1.7,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10314768","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135604932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors","authors":"Rajat Butola;Yiming Li;Sekhar Reddy Kola","doi":"10.1109/OJNANO.2023.3328425","DOIUrl":"10.1109/OJNANO.2023.3328425","url":null,"abstract":"Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper a novel design scheme based on dynamically adaptive neural network (DANN) is proposed to develop fast and accurate compact model (CM). This framework constitutes a powerful yet computationally efficient methodology and exhibits emergent dynamic behaviors. This paper demonstrates that the compact model based on ML can be designed to replicate the performance of conventional compact model for nanodevices. For this work, gate-all-around (GAA) nanosheet (NS) device characteristics are comprehensively analyzed for process variability sources using the proposed model. The device geometry parameters such as channel length, nanosheet width and nanosheet thickness are fed as input features to the DANN model. The adaptive neural network learns dynamically by updating weights of the model in accordance with the input features and achieves accurate neural weight convergence. The proposed model predicted the electrical characteristics of NS devices with less than 1% error rate. The model is also implemented and validated for the simulations of digital circuit designs such as inverter, and logic gates.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"181-194"},"PeriodicalIF":1.7,"publicationDate":"2023-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10301633","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135260945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sputtering Deposition With Low Cost Multi-Element Powder Targets","authors":"Tamiko Ohshima","doi":"10.1109/OJNANO.2023.3327997","DOIUrl":"10.1109/OJNANO.2023.3327997","url":null,"abstract":"Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consisting of zinc oxide and aluminum oxide powders at 98:2 wt%. The bulk density of the powder target can be varied depending on the pressing pressure. Therefore, AZO thin films were prepared on Si and sapphire substrates using powder targets with different bulk densities (\u0000<italic>ρ_p_owder</i>\u0000) ranging from 0.898 to 3.00 g/cm\u0000³\u0000. The fabricated structural, electrical, and optical properties of the AZO thin films were examined, and the relationships between the target bulk density and film properties were investigated. X-ray diffraction measurements revealed c-axis ZnO (002) diffraction peaks, corresponding to crystallite growth oriented perpendicular to the substrate. Hall effect measurements showed n-type conductivity, with carrier density and Hall mobility increasing as the bulk density of the powder target increased. At \u0000<italic>ρ_p_owder</i>\u0000 = 3.00 g/cm\u0000³\u0000, the AZO thin film on the Si substrate showed the lowest resistivity of 1.35 × 10\u0000⁻³\u0000 Ω·cm. UV-visible spectroscopy measurements showed that the average transmittance in the visible light region exceeded 80% for the AZO thin films on the sapphire substrates. The figure of merit was calculated as a measure of the potential application in optoelectronic devices, resulting in 6.37 × 10\u0000⁻³\u0000 Ω\u0000⁻¹\u0000 for \u0000<italic>ρ_p_owder</i>\u0000 = 3.00 g/cm\u0000³\u0000. This research contributes to Nagasaki University's goal of “planetary health”.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"172-180"},"PeriodicalIF":1.7,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298617","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135212984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design, Fabrication and Measurement of Radio Frequency Micro-Electro-Mechanical Systems","authors":"Girija Sravani Kondavitee;Young Suh Song;Srinivasa Rao Karumuri;Koushik Guha;Brajesh Kumar Kaushik;Aimé Lay-Ekuakille","doi":"10.1109/OJNANO.2023.3318236","DOIUrl":"10.1109/OJNANO.2023.3318236","url":null,"abstract":"This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromachining technology and exhibits several desirable characteristics. The key findings and features of the proposed RF MEMS switch are as follows: The switch operates at a very low pull-in voltage of 4.4 V, which is advantageous as it requires low actuation voltage for switching operations. Low ON State Capacitance: The switch demonstrates a low ON state capacitance of 81.2 fF, indicating efficient switching performance. High Isolation: The switch exhibits high isolation of −60.68 dB at 23 GHz, which is the central frequency of the K-band. This high isolation ensures minimal interference and improved signal integrity. The RF MEMS switch is integrated with a circular patch antenna, enabling reconfigurability in the operating frequency of the antenna. The antenna's frequency can be adjusted by actuating the switches alternatively. The specific operating frequencies and return loss values are as follows: Both Switches ON: The antenna radiates the signal at a frequency of 19.2 GHz with a return loss of −26.7 dB. Only Switch A ON: The antenna radiates at a frequency of 21 GHz with a return loss of −17.6 dB. Only Switch B ON: The antenna radiates the signal at a frequency of 26.4 GHz with a return loss of −17.47 dB. The RF MEMS switch and antenna are optimized to transmit RF signals within the K-band frequency range. The integration of the step structured RF MEMS switches successfully enables reconfiguration of the antenna's operating frequency. The proposed antenna, integrated with the RF MEMS switches, has potential applications in various K-band systems, including surface movement radars, direct broadcast satellite, Direct-to-Home (DHT) television, and 5th Generation (5G) mobile communication. The reconfigurability of the antenna's frequency allows for flexibility and adaptability in different K-band applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"195-207"},"PeriodicalIF":1.7,"publicationDate":"2023-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10269333","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135913448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic Landau Quantization Effects on the Magnetic Moment and Specific Heat of a T-3 Dice Lattice","authors":"Norman J. M. Horing;M. L. Glasser","doi":"10.1109/OJNANO.2023.3316877","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3316877","url":null,"abstract":"In this work we analyze the statistical thermodynamic functions and magnetic moment of a Dice lattice subject to a normal quantizing magnetic field. Our analysis addresses the Grand Potential and Helmholtz Free Energy, as well as the magnetic moment, entropy and specific heat at constant volume, explicitly determining their magnetic field dependencies in the degenerate statistical regime, replete with de Haas-van Alphen oscillatory phenomenology (and other magnetic field dependence); and also determining their temperature dependencies jointly with magnetic field features in the approach to the zero temperature limit. Furthermore, we evaluate the Grand Potential exactly, for arbitrary temperature and density. Our results are obtained with consideration of the presence of heat and particle baths with fixed chemical potential and they are discussed in relation to other pertinent work on the subject.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"156-161"},"PeriodicalIF":1.7,"publicationDate":"2023-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10265748","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109156927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing","authors":"Yi-Ho Chen;Daisuke Ohori;Muhammad Aslam;Yao-Jen Lee;Yiming Li;Seiji Samukawa","doi":"10.1109/OJNANO.2023.3306011","DOIUrl":"10.1109/OJNANO.2023.3306011","url":null,"abstract":"This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (V\u0000_th\u0000) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (I\u0000_DMAX\u0000), transconductance (g\u0000_m\u0000), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for I\u0000_DMAX\u0000, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative V\u0000_th\u0000 values, which can be attributed to the controlled surface states achieved through passivation.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"150-155"},"PeriodicalIF":1.7,"publicationDate":"2023-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10223256","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring by AgNPs of the Energetics of Charge Carriers in Electrically Insulating Polymers at the Electrode/Dielectric Contact","authors":"Kremena Makasheva;Christina Villeneuve-Faure;Adriana Scarangella;Luca Montanari;Laurent Boudou;Gilbert Teyssedre","doi":"10.1109/OJNANO.2023.3284201","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3284201","url":null,"abstract":"The ever increasing field of application of nanodielectrics in electrical insulations calls for description of the mechanisms underlying the performance of these systems and for identification of the signs exposing their aging under high electric fields. Such approach is of particular interest to electrically insulating polymers because their chemical defects are of deleterious nature for their electrical properties and can largely degrade their performance at high electric fields. Although these defects usually leave spectroscopic signatures in terms of characteristic luminescence peaks, it is nontrivial to assign, in an unambiguous way, the identified peaks to specific chemical groups or defects because of the low intensity of the signal with the main reason being that the insulating polymers are weakly emitting materials under electric field. In this work, we go beyond the conventional electroluminescence technique to record spectroscopic features of insulating polymers. By introducing a single plane of silver nanoparticles (AgNPs) at the near-surface of thin polypropylene films, the electroluminescent signal is strongly enhanced by surface plasmons processes. The presence of AgNPs leads not only to a much higher electroluminescence intensity but also to a strong decrease of the electric field threshold for detection of light emission and to a phase-stabilization of the recorded spectra, thus improving the assignment of the characteristic luminescence peaks. Besides, the performed analyses bring evidence on the capability of AgNPs to trap and eject charges, and on the possibility to adjust the energetics of charge carriers in electrically insulating polymers at the electrode/dielectric contact via AgNPs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"133-149"},"PeriodicalIF":1.7,"publicationDate":"2023-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10146436.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}