IEEE Open Journal of Nanotechnology最新文献

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Energy Efficient Spin-Based Implementation of Neuromorphic Functions in CNNs cnn中基于能量高效自旋的神经形态函数实现
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-03-27 DOI: 10.1109/OJNANO.2023.3261959
Sandeep Soni;Gaurav Verma;Hemkant Nehete;Brajesh Kumar Kaushik
{"title":"Energy Efficient Spin-Based Implementation of Neuromorphic Functions in CNNs","authors":"Sandeep Soni;Gaurav Verma;Hemkant Nehete;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2023.3261959","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3261959","url":null,"abstract":"Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficiency. This has necessitated the investigations of unconventional devices, circuits, and architectures to efficiently mimic the functionality of neurons and synapses for neuromorphic applications. Spin-orbit torque magnetic tunnel junction (SOT-MTJ) device is capable of achieving energy and area efficient rectified linear unit (ReLU) activation functionality. This work utilizes the SOT-MTJ based ReLU for activation and max-pooling in a single unit to eliminate the need of dedicated hardware for pooling layer. Moreover, 2 × 2 multiply-accumulate-activate-pool (MAAP) is implemented by using four activation pairs each of which is fed by the crossbar output. The presented approach has been used to implement various CNN architectures and evaluated for CIFAR-10 image classification. The number of read/write operations reduce significantly by 2X in MAAP based CNN architectures. The results show that the area and energy in MAAP based CNN is improved by at least 25% and 82.9%, respectively, when compared with conventional CNN designs.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"102-108"},"PeriodicalIF":1.7,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10081384.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis 采用介质电泳技术的金属碳纳米管容容场效应晶体管
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-03-13 DOI: 10.1109/OJNANO.2023.3256410
Shobhit Kareer;Jeongwon Park
{"title":"Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis","authors":"Shobhit Kareer;Jeongwon Park","doi":"10.1109/OJNANO.2023.3256410","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3256410","url":null,"abstract":"The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products. However, the precise manipulation of CNTs requires complicated techniques, which increases process variation. These variations can lead to a decrease in the overall yield of the field-effect transistor (FET). This study shows how a low-frequency signal may regulate the number of CNTs on electrodes with a nanometer scale. We also demonstrate using an interdigitated electrode to reduce the shorts caused by metallic CNTs. The fabricated CNFETs were characterized using SEM, AFM, and I-V measurements. The study also demonstrates how the duration and amplitude of the applied signal impact the density of CNTs on the electrodes. Finally, finite element analysis was used to evaluate the electric field parameters during DEP. This technique will lead to precise CNTs per unit area, which can help fabricate transistors, sensors, and other electronic components.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"95-101"},"PeriodicalIF":1.7,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10068299.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Nanoparticles Mediated Thrombolysis–A Review 磁性纳米颗粒介导的血栓溶解——综述
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-03-08 DOI: 10.1109/OJNANO.2023.3273921
Bohua Zhang;Xiaoning Jiang
{"title":"Magnetic Nanoparticles Mediated Thrombolysis–A Review","authors":"Bohua Zhang;Xiaoning Jiang","doi":"10.1109/OJNANO.2023.3273921","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3273921","url":null,"abstract":"Nanoparticles containing thrombolytic medicines have been developed for thrombolysis applications in response to the increasing demand for effective, targeted treatment of thrombosis disease. In recent years, there has been a great deal of interest in nanoparticles that can be navigated and driven by a magnetic field. However, there are few review publications concerning the application of magnetic nanoparticles in thrombolysis. In this study, we examine the current state of magnetic nanoparticles in the application of \u0000<italic>in vitro</i>\u0000 and \u0000<italic>in vivo</i>\u0000 thrombolysis under a static or dynamic magnetic field, as well as the combination of magnetic nanoparticles with an acoustic field for dual-mode thrombolysis. We also discuss four primary processes of magnetic nanoparticles mediated thrombolysis, including magnetic nanoparticle targeting, magnetic nanoparticle trapping, magnetic drug release, and magnetic rupture of blood clot fibrin networks. This review will offer unique insights for the future study and clinical development of magnetic nanoparticles mediated thrombolysis approaches.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"109-132"},"PeriodicalIF":1.7,"publicationDate":"2023-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10120760.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guest Editorial: Materials & Devices for Advanced Flexible Sensors 嘉宾评论:先进柔性传感器的材料与器件
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-02-03 DOI: 10.1109/OJNANO.2023.3238959
Yu Xinge
{"title":"Guest Editorial: Materials & Devices for Advanced Flexible Sensors","authors":"Yu Xinge","doi":"10.1109/OJNANO.2023.3238959","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3238959","url":null,"abstract":"The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT), respectively. Three research article introduces new methods in flexible pressure sensing array, ammonia sensors and charge plasma junctionless tunnel field effect transistor (CP JLTFET), respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"23-24"},"PeriodicalIF":1.7,"publicationDate":"2023-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10036332.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dirac Materials and an Identity for the Grand Potential of the Nondegenerate Statistical Thermodynamic Regime 狄拉克材料与非简并统计热力学体系的大势恒等式
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-01-10 DOI: 10.1109/OJNANO.2023.3234042
NORMAN J. M. HORING
{"title":"Dirac Materials and an Identity for the Grand Potential of the Nondegenerate Statistical Thermodynamic Regime","authors":"NORMAN J. M. HORING","doi":"10.1109/OJNANO.2023.3234042","DOIUrl":"https://doi.org/10.1109/OJNANO.2023.3234042","url":null,"abstract":"We examine the question “Can Dirac materials exist in a nondegenerate statistical state?,” deriving and employing an identity for the thermodynamic Grand Potential \u0000<inline-formula><tex-math>$Omega$</tex-math></inline-formula>\u0000 (per unit volume/area) in the low density nondegenerate statistical regime, relating it to the density \u0000<inline-formula><tex-math>$n$</tex-math></inline-formula>\u0000 as \u0000<inline-formula><tex-math>$Omega = -beta ^{-1} n$</tex-math> </inline-formula>\u0000 (\u0000<inline-formula><tex-math>$beta ^{-1} = kappa _{B} T$</tex-math></inline-formula>\u0000 is thermal energy, \u0000<inline-formula><tex-math>$kappa _{B}$</tex-math></inline-formula>\u0000 is the Boltzmann constant, and \u0000<inline-formula><tex-math>$T$</tex-math></inline-formula>\u0000 is Kelvin temperature). The implications of this identity for Dirac materials are explored. The identity is universally valid for all thermodynamic systems in equilibrium in the nondegenerate, low density statistical regime, irrespective of size, dimensionality or applied static fields. Phenomena that may contribute to the realization of such a nondegenerate statistical equilibrium state in Dirac materials are discussed.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"77-80"},"PeriodicalIF":1.7,"publicationDate":"2023-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10014530.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3496406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Greenhouse Gas Detection Based on Infrared Nanophotonic Devices 基于红外纳米光子器件的温室气体检测
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-01-06 DOI: 10.1109/OJNANO.2022.3233485
Chunhui Hao;Xiao Fu;Xiaoyong Jiang;Yutong Li;Juyi Sun;Haitao Wu;He Zhu;Qing Li;Yunhai Li;Zhangcheng Huang;Fang Zhong;Ting He;Jinshui Miao;Weida Hu
{"title":"Greenhouse Gas Detection Based on Infrared Nanophotonic Devices","authors":"Chunhui Hao;Xiao Fu;Xiaoyong Jiang;Yutong Li;Juyi Sun;Haitao Wu;He Zhu;Qing Li;Yunhai Li;Zhangcheng Huang;Fang Zhong;Ting He;Jinshui Miao;Weida Hu","doi":"10.1109/OJNANO.2022.3233485","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3233485","url":null,"abstract":"Most greenhouse gases come from biological activities and industry which will lead to global warming and show an impact on human life. With the need of green transformation of the global economic structure and seeking for higher quality of human life, the detection and management of greenhouse gases, as well as most hazardous gases in the environment, are increasingly demanding. Applications in different fields require sensors that can detect gas volume fractions with magnitudes from 10–9 to 10–4. Greenhouse gas detection plays an important role both in the agriculture and industry field. In this review, we first summarize the mechanism of several common gas detectors used currently. Then, the advantages of nanostructured gas sensors are discussed. Finally, the applications of infrared gas sensors based on nanophotonic devices are described in detail. This review has been an outlook on the future development of infrared gas sensors based on nanophotonic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"10-22"},"PeriodicalIF":1.7,"publicationDate":"2023-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/10009893.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2023 Index IEEE Open Journal of Nanotechnology Vol. 4 2023 Index IEEE Open Journal of Nanotechnology Vol.
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2023-01-01 DOI: 10.1109/OJNANO.2024.3362684
{"title":"2023 Index IEEE Open Journal of Nanotechnology Vol. 4","authors":"","doi":"10.1109/OJNANO.2024.3362684","DOIUrl":"https://doi.org/10.1109/OJNANO.2024.3362684","url":null,"abstract":"","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-6"},"PeriodicalIF":1.7,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10429774","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139710584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch 射频微机电系统开关的建模、制造和测试
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2022-12-26 DOI: 10.1109/OJNANO.2022.3232182
Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille
{"title":"Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch","authors":"Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille","doi":"10.1109/OJNANO.2022.3232182","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3232182","url":null,"abstract":"This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"81-94"},"PeriodicalIF":1.7,"publicationDate":"2022-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09999329.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guest Editorial: Nanopackaging Part II 嘉宾评论:纳米包装第二部分
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2022-12-23 DOI: 10.1109/OJNANO.2022.3224652
Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha
{"title":"Guest Editorial: Nanopackaging Part II","authors":"Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha","doi":"10.1109/OJNANO.2022.3224652","DOIUrl":"10.1109/OJNANO.2022.3224652","url":null,"abstract":"The papers in this special section focus on nanopackaging. It begins with three reviews of diverse nanoscale technologies and then moves on to research papers focused primarily on nanomaterials for on-chip interconnect and noise abatement.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"166-168"},"PeriodicalIF":1.7,"publicationDate":"2022-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9997810","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity 高各向异性能和半金属丰度的过渡金属掺杂铋和Mn-Bi/CrI3异质结构
IF 1.7
IEEE Open Journal of Nanotechnology Pub Date : 2022-12-22 DOI: 10.1109/OJNANO.2022.3231436
Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik
{"title":"Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity","authors":"Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3231436","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3231436","url":null,"abstract":"Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature \u0000<italic>T<sub>c</sub></i>\u0000, and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI\u0000<sub>3</sub>\u0000 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI\u0000<sub>3</sub>\u0000 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI\u0000<sub>3</sub>\u0000 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI\u0000<sub>3</sub>\u0000 heterostructure paves the path for the development of spintronic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-9"},"PeriodicalIF":1.7,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09996563.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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