IEEE Open Journal of Nanotechnology最新文献_第5页

2023 Index IEEE Open Journal of Nanotechnology Vol. 4 2023 Index IEEE Open Journal of Nanotechnology Vol.

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2023-01-01 DOI: 10.1109/OJNANO.2024.3362684

引用次数: 0

Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch 射频微机电系统开关的建模、制造和测试

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-26 DOI: 10.1109/OJNANO.2022.3232182

Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille

{"title":"Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch","authors":"Srinivasa Rao Karumuri;P. Ashok Kumar;Girija Sravani Kondavitee;Aime Lay-Ekuakille","doi":"10.1109/OJNANO.2022.3232182","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3232182","url":null,"abstract":"This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4-mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ = 0.5.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"81-94"},"PeriodicalIF":1.7,"publicationDate":"2022-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09999329.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Guest Editorial: Nanopackaging Part II 嘉宾评论:纳米包装第二部分

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-23 DOI: 10.1109/OJNANO.2022.3224652

Attila Bonyar;Brajesh Kumar Kaushik;James E. Morris;Markondeyaraj Pulugurtha

引用次数: 0

Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity 高各向异性能和半金属丰度的过渡金属掺杂铋和Mn-Bi/CrI3异质结构

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-22 DOI: 10.1109/OJNANO.2022.3231436

Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik

{"title":"Transition Metal Doped Bismuthene and Mn-Bi/CrI3 Heterostructure for High Anisotropy Energy and Half-Metallicity","authors":"Shipra Saini;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3231436","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3231436","url":null,"abstract":"Magnetic anisotropy energy (MAE) of two-dimensional (2D) magnetic materials is the key parameter for designing next-generation spintronic devices. Here, using first-principle calculations based on density functional theory (DFT), the variance in MAE and other magnetic properties is observed for transition metal (TM) doped bismuth monolayer (bismuthene). This doped system shows a significant modulation in the magnetic moment, MAE, Curie temperature \u0000<italic>Tc\u0000, and charge transfer. However, Mn-doped bismuthene exhibits half-metallicity with a maximum magnetic moment of 4μB (Bohr magneton) that is 17% higher than Fe-doped bismuthene. The maximum MAE extracted for Mn-doped bismuthene is 27.51% higher than the Ti-doped system. On the basis of these findings, the electronic and magnetic characteristics of Mn-doped bismuthene (Mn-Bi) and monolayer CrI\u00003\u0000 van der Waals (vdW) heterostructures are also investigated. In Mn-Bi/CrI\u00003\u0000 van der Waals heterostructure, the half-metal Mn-Bi can induce the half-metallicity in CrI\u00003\u0000 through charge transfer. Compared to other doped systems, Mn-Bi presents the most favorable magnetic properties. Thus, Mn-Bi/CrI\u00003\u0000 heterostructure paves the path for the development of spintronic devices.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"1-9"},"PeriodicalIF":1.7,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09996563.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Guest Editorial: Emerging Plasma Nanotechnologies 嘉宾评论:新兴等离子体纳米技术

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-14 DOI: 10.1109/OJNANO.2022.3224346

Masaharu Shiratani;John P. Verboncoeur;Jong-Shinn Wu

引用次数: 0

Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy 可穿戴近红外光谱技术的最新进展与设计策略

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-05 DOI: 10.1109/OJNANO.2022.3226603

Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu

{"title":"Recent Advances and Design Strategies Towards Wearable Near-Infrared Spectroscopy","authors":"Shuoyan Liu;Bing Xue;Wenyuan Yan;Alina Y. Rwei;Changsheng Wu","doi":"10.1109/OJNANO.2022.3226603","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3226603","url":null,"abstract":"With a growing focus on properties of softness, miniaturization, and intelligence, extensive research has been focusing on constructing wearable electronic devices facilitating comfort, wearable health monitoring and diagnosis. Among recent progress in the development of wearable bioelectronics, wearable near-infrared spectroscopy (NIRS) devices demonstrate wide implementation possibilities in multiple health monitoring scenarios. Throughout the years, multiple design strategies have assisted in developing wearable NIRS devices with high wearing comfortability and miniaturized size. This review summarizes the principle of NIRS technology, recent advances in design strategies towards soft, wearable, miniaturized NIRS devices, and the future potential development directions. Based on the discussion of different design strategies, including modular device design, flexible hybrid electronics, and materials innovation, we also pinpoint some development directions for wearable NIRS. The reviewed and proposed research efforts may enhance the applicability and capability of NIRS as an important technology for digital health.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"25-35"},"PeriodicalIF":1.7,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09969912.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits 量子点元胞自动机电路的自动化设计方法

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-12-02 DOI: 10.1109/OJNANO.2022.3223413

Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis

{"title":"Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits","authors":"Orestis Liolis;Vassilios A. Mardiris;Ioannis G. Karafyllidis;Sorin Cotofana;Georgios Ch. Sirakoulis","doi":"10.1109/OJNANO.2022.3223413","DOIUrl":"10.1109/OJNANO.2022.3223413","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high-performance nanoelectronic circuits. However, state-of-the-art QCA circuit designs were not derived by following a set of universal design rules, as is the case of CMOS circuits, and, as a result, it is either impossible or very difficult to combine QCA circuit blocks in effective large-scale circuits. In this paper, we introduce a novel automated design methodology, which builds upon a QCA specific universal design rules set. The proposed methodology assumes the availability of a generic QCA crossbar architecture and provides the means to customize it in order to implement any given logic function. The programming principles and the flow of the proposed automated design tool for crossbar QCA circuits are described analytically and we apply the proposed automated design method for the design of both combinatorial and sequential circuits. The obtained designs demonstrate that the proposed method is functional, easy to use, and provides the desired QCA circuit design unification.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"162-171"},"PeriodicalIF":1.7,"publicationDate":"2022-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9968311","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Advances in Touch Sensors for Flexible Displays 柔性显示器触摸传感器的最新进展

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-25 DOI: 10.1109/OJNANO.2022.3224757

Chenglan Ouyang;Di Liu;Ke He;Jiahao Kang

引用次数: 0

Design and Parametric Analysis of Charge Plasma Junctionless TFET for Biosensor Applications 用于生物传感器的电荷等离子体无结TFET的设计与参数分析

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-24 DOI: 10.1109/OJNANO.2022.3224462

D Manaswi;Srinivasa Rao Karumuri;Girish Wadhwa

引用次数: 2

Additive Manufacturing for Nano-Feature Applications: Electrohydrodynamic Printing as a Next-Generation Enabling Technology 纳米特征应用的增材制造:电流体动力打印作为下一代使能技术

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-23 DOI: 10.1109/OJNANO.2022.3224229

Goran Miskovic;Robin Kaufhold

{"title":"Additive Manufacturing for Nano-Feature Applications: Electrohydrodynamic Printing as a Next-Generation Enabling Technology","authors":"Goran Miskovic;Robin Kaufhold","doi":"10.1109/OJNANO.2022.3224229","DOIUrl":"10.1109/OJNANO.2022.3224229","url":null,"abstract":"Regardless of the technology, additive or subtractive, the miniaturization trend is constantly pushing for smaller resolutions. The rise of global challenges in material availability, fabrication in three dimensions (3D), design flexibility and rapid prototyping have pushed additive manufacturing (AM) into the spotlight. Addressing the miniaturization trend, AM has already successfully answered the challenges for microscale 3D fabrication. However, fabricating nano-resolution still presents a challenge. In this review, we will present some of the most reported AM-based technologies capable of nanoscale 3D fabrication addressing resolutions of ≤ 500 nm. The focus is placed on Electrohydrodynamic (EHD) printing (also known as e-jet printing), as EHD printing seems to have the best trade-off when it comes to technique complexity, achievable resolutions, material diversity and potential to scale-up throughput. An overview of the smallest achieved resolutions as well as the most unique use cases and demonstrated applications will be addressed in this work.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"191-198"},"PeriodicalIF":1.7,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9961888","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1