IEEE Open Journal of Nanotechnology最新文献_第6页

Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications 潜在纳米互连应用的铜钝化之字形MgO纳米带

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-18 DOI: 10.1109/OJNANO.2022.3223151

M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik

{"title":"Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications","authors":"M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3223151","DOIUrl":"10.1109/OJNANO.2022.3223151","url":null,"abstract":"The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (\u0000<inline-formula><tex-math>$R_{Q}$</tex-math></inline-formula>\u0000), quantum capacitance (\u0000<inline-formula><tex-math>$C_{Q}$</tex-math></inline-formula>\u0000), and kinetic inductance (\u0000<inline-formula><tex-math>$L_{K}$</tex-math></inline-formula>\u0000) are computed to be 6.46 k\u0000<inline-formula><tex-math>$Omega$</tex-math></inline-formula>\u0000, 5.57 fF/\u0000<inline-formula><tex-math>$mutext{m}$</tex-math></inline-formula>\u0000, and 58.17 nF/\u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"220-226"},"PeriodicalIF":1.7,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954618","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Amorphous In-Ga-Mg-O Thin Films Formed by RF Magnetron Sputtering: Optical, Electrical Properties and Thin-Film-Transistor Characteristics 射频磁控溅射形成的In-Ga-Mg-O非晶薄膜:光学、电学特性和薄膜晶体管特性

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-17 DOI: 10.1109/OJNANO.2022.3222850

Hisato Yabuta;Naho Itagaki;Toshikazu Ekino;Yuzo Shigesato

引用次数: 0

Indefinite Admittance Matrix Based Modelling of PSIJ in Nano-Scale CMOS I/O Drivers 基于不定导纳矩阵的纳米级CMOS I/O驱动器PSIJ建模

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-14 DOI: 10.1109/OJNANO.2022.3221838

Vijender Kumar Sharma;Jai Narayan Tripathi;Hitesh Shrimali

{"title":"Indefinite Admittance Matrix Based Modelling of PSIJ in Nano-Scale CMOS I/O Drivers","authors":"Vijender Kumar Sharma;Jai Narayan Tripathi;Hitesh Shrimali","doi":"10.1109/OJNANO.2022.3221838","DOIUrl":"10.1109/OJNANO.2022.3221838","url":null,"abstract":"The past decade has witnessed a tremendous reduction in the feature size from the deep-submicron to the advanced nano-scale CMOS devices. In nanoscale devices based high-speed systems, the budgeting of jitter due to supply fluctuations is one of the major performance bottlenecks while designing integrated circuits (ICs). In this paper, an accurate and efficient method to analyse power supply induced jitter (PSIJ) in CMOS N-stage inverters is developed using the estimation-by-inspection method. Based on the Indefinite Admittance Matrix, a reduced two-port network is developed for a multiple-input circuit, considering the presence of the supply/bulk/ground sources. The closed-form expressions of the PSIJ have been evaluated for a single and N-stages CMOS inverter chain. The expression is also valid for the PSIJ analysis at any intermediate stage of the N-stage chain. For validation purpose, the circuits are designed in a standard 28 nm CMOS technology with V\u0000<inline-formula><tex-math>$_text{DD}$</tex-math></inline-formula>\u0000 of 1 V. The analytical results are compared with the simulation and the experiments. The maximum mean percentage error for EDA simulation and experimentally measured results are 2.4% and 13%, respectively. The proposed analysis is compared with some of the existing PSIJ modelling techniques and shows a significant improvement in speed-up factor and error percentage.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"199-209"},"PeriodicalIF":1.7,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9947063","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62889006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Analysis of Bump in Tapered TSV: Impact on Crosstalk and Power Loss 锥形TSV中碰撞的性能分析:对串扰和功耗的影响

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-14 DOI: 10.1109/OJNANO.2022.3221815

Shivangi Chandrakar;Deepika Gupta;Manoj Kumar Majumder;Brajesh Kumar Kaushik

{"title":"Performance Analysis of Bump in Tapered TSV: Impact on Crosstalk and Power Loss","authors":"Shivangi Chandrakar;Deepika Gupta;Manoj Kumar Majumder;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3221815","DOIUrl":"10.1109/OJNANO.2022.3221815","url":null,"abstract":"This study addresses the first feasible, and comprehensive approach to demonstrate a compact resistance-inductance-capacitance-conductance (\u0000<italic>RLCG\u0000) model for a multi-walled carbon nanotube bundle (MWB) and multilayered graphene nanoribbon (MLGNR) based tapered through silicon via (\u0000<italic>T\u0000-TSV) along with the different shaped bumps. The physical structures of bumps accurately considered the effect of the high frequency resistive impact and the inter-metal dielectric (IMD) layer. A mathematical framework has been designed for the parasitics of the cylindrical, barrel, hourglass and the tapered bump structures. The bump and via parasitics have been computed by utilizing the current continuity expression, partial inductance method, splitting infinitesimally thin slices of bump and triangular arrangement of tube assemblage. In order to validate the proposed model, the EM simulation is performed and compared against the analytical results. A remarkable consistency of the analytical and EM simulation-based results supports the proposed model accuracy. Furthermore, when compared to the MWB based structures, the MLGNR -based tapered TSV shows a substantial improvement in power loss and crosstalk. Furthermore, regardless of via height, the TSV with tapered bump structure reduces the overall crosstalk induced delay by 33.22%, 28.90%, and 21.61%, respectively, when compared to the barrel, cylindrical and the hourglass structure.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"227-235"},"PeriodicalIF":1.7,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9947291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering 亚托压等离子溅射在Cu衬底上低温高速制备纳米晶锗薄膜

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-11 DOI: 10.1109/OJNANO.2022.3221462

Giichiro Uchida;Kenta Nagai;Ayaka Wakana;Yumiko Ikebe

{"title":"Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering","authors":"Giichiro Uchida;Kenta Nagai;Ayaka Wakana;Yumiko Ikebe","doi":"10.1109/OJNANO.2022.3221462","DOIUrl":"10.1109/OJNANO.2022.3221462","url":null,"abstract":"We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm\u00002\u0000 (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm\u00002\u0000 (60 W) to 17.7 W/cm\u00002\u0000 (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N\u00002\u0000 atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu\u00003\u0000Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"153-158"},"PeriodicalIF":1.7,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9946384","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biodegradable and Nanocomposite Materials as Printed Circuit Substrates: A Mini-Review 生物可降解和纳米复合材料作为印刷电路衬底:综述

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-10 DOI: 10.1109/OJNANO.2022.3221273

Attila Géczy;Csaba Farkas;Rebeka Kovács;Denis Froš;Petr Veselý;Attila Bonyár

引用次数: 2

Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects 用于亚阈值互连的cu -碳纳米管复合材料建模与分析

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-10 DOI: 10.1109/OJNANO.2022.3221141

Ashish Singh;Brajesh Kumar Kaushik;Rohit Dhiman

引用次数: 1

Recent Advances in Materials, Designs and Applications of Skin Electronics 皮肤电子材料、设计与应用的最新进展

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-02 DOI: 10.1109/OJNANO.2022.3218960

Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu

{"title":"Recent Advances in Materials, Designs and Applications of Skin Electronics","authors":"Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu","doi":"10.1109/OJNANO.2022.3218960","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3218960","url":null,"abstract":"As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"55-70"},"PeriodicalIF":1.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09935291.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Emerging Plasma Nanotechnology 新兴的等离子体纳米技术

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-10-28 DOI: 10.1109/OJNANO.2022.3217806

Seiji Samukawa

引用次数: 0

Nanofiber-Textured Organic Semiconductor Films for Field-Effect Ammonia Sensors 用于场效应氨传感器的纳米纤维织构有机半导体薄膜

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-10-26 DOI: 10.1109/OJNANO.2022.3217255

Yao Tang;Qing Ma;Jie Lu;Xingyu Jiang;Lizhen Huang;Lifeng Chi;Litao Sun;Binghao Wang

引用次数: 0