IEEE Open Journal of Nanotechnology最新文献_第7页

Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering 亚托压等离子溅射在Cu衬底上低温高速制备纳米晶锗薄膜

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IEEE Open Journal of Nanotechnology Pub Date : 2022-11-11 DOI: 10.1109/OJNANO.2022.3221462

Giichiro Uchida;Kenta Nagai;Ayaka Wakana;Yumiko Ikebe

{"title":"Low-Temperature and High-Speed Fabrication of Nanocrystalline Ge Films on Cu Substrates Using Sub-Torr-Pressure Plasma Sputtering","authors":"Giichiro Uchida;Kenta Nagai;Ayaka Wakana;Yumiko Ikebe","doi":"10.1109/OJNANO.2022.3221462","DOIUrl":"10.1109/OJNANO.2022.3221462","url":null,"abstract":"We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the substrate was decreased to 5 mm and the RF input power was 11.8 W/cm\u00002\u0000 (60 W), where the deposition rate was as high as 660 nm/min. In addition, the size of the nanocrystalline grains increased from 100 to 307 nm when the RF input power for plasma production was increased from 11.8 W/cm\u00002\u0000 (60 W) to 17.7 W/cm\u00002\u0000 (90 W). In the developed narrow-gap plasma process at sub-Torr pressures, nanocrystalline Ge films were successfully fabricated on Cu substrates at low temperatures, without the substrate being heated. However, when annealing was conducted under an N\u00002\u0000 atmosphere, which is the conventional method to induce solid-phase crystallization, the amorphous Ge layer on a Cu substrate changed to a Cu\u00003\u0000Ge crystal layer through interdiffusion of Ge and Cu atoms at 400–500 °C.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"153-158"},"PeriodicalIF":1.7,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9946384","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biodegradable and Nanocomposite Materials as Printed Circuit Substrates: A Mini-Review 生物可降解和纳米复合材料作为印刷电路衬底:综述

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-10 DOI: 10.1109/OJNANO.2022.3221273

Attila Géczy;Csaba Farkas;Rebeka Kovács;Denis Froš;Petr Veselý;Attila Bonyár

引用次数: 2

Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects 用于亚阈值互连的cu -碳纳米管复合材料建模与分析

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-10 DOI: 10.1109/OJNANO.2022.3221141

Ashish Singh;Brajesh Kumar Kaushik;Rohit Dhiman

引用次数: 1

Recent Advances in Materials, Designs and Applications of Skin Electronics 皮肤电子材料、设计与应用的最新进展

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-11-02 DOI: 10.1109/OJNANO.2022.3218960

Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu

{"title":"Recent Advances in Materials, Designs and Applications of Skin Electronics","authors":"Kuanming Yao;Yawen Yang;Pengcheng Wu;Guangyao Zhao;Lidai Wang;Xinge Yu","doi":"10.1109/OJNANO.2022.3218960","DOIUrl":"https://doi.org/10.1109/OJNANO.2022.3218960","url":null,"abstract":"As electronic devices get smaller, more portable, and smarter, a new approach of realizing electronics in thin, soft, and even stretchable style that could be worn and attached to the skin, which is called skin electronics, has emerged and attracted much attention. To achieve well compliance, extend the maximum stretchability, promote the comfortability of wearing, and make the most use of the skin electronics, researchers are making efforts in different aspects. In this article, we summarized the recent advances in categories of materials science, design strategies and novel applications. Examples of skin electronics using various functional materials including piezoelectric, thermoelectric, etc., and soft conductive materials including PEDOT: PSS-based conductive polymer, carbon nanomaterials, metal-based materials and hydrogels were given. Different mechanics design strategies for enhancing mechanical performance and comfortability design strategies for better wearing experience were introduced. Lastly, practical applications of skin electronics in fields of smart healthcare and human-machine interface were discussed. Research focused on these aspects all boosted the development of skin electronics in different dimensions, with which combined together may help skin electronics take a leap into truly ubiquitous use in our daily life.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"4 ","pages":"55-70"},"PeriodicalIF":1.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8782713/10007543/09935291.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Emerging Plasma Nanotechnology 新兴的等离子体纳米技术

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IEEE Open Journal of Nanotechnology Pub Date : 2022-10-28 DOI: 10.1109/OJNANO.2022.3217806

Seiji Samukawa

引用次数: 0

Nanofiber-Textured Organic Semiconductor Films for Field-Effect Ammonia Sensors 用于场效应氨传感器的纳米纤维织构有机半导体薄膜

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-10-26 DOI: 10.1109/OJNANO.2022.3217255

Yao Tang;Qing Ma;Jie Lu;Xingyu Jiang;Lizhen Huang;Lifeng Chi;Litao Sun;Binghao Wang

引用次数: 0

Single DNA Translocation and Electrical Characterization Based on Atomic Force Microscopy and Nanoelectrodes 基于原子力显微镜和纳米电极的单DNA易位和电学表征

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-10-25 DOI: 10.1109/OJNANO.2022.3217108

Bo Ma;Jin-Woo Kim;Steve Tung

{"title":"Single DNA Translocation and Electrical Characterization Based on Atomic Force Microscopy and Nanoelectrodes","authors":"Bo Ma;Jin-Woo Kim;Steve Tung","doi":"10.1109/OJNANO.2022.3217108","DOIUrl":"10.1109/OJNANO.2022.3217108","url":null,"abstract":"Precision DNA translocation control is critical for achieving high accuracy in single molecule-based DNA sequencing. In this report, we describe an atomic force microscopy (AFM) based method to linearize a double-stranded DNA strand during the translocation process and characterize the electrical properties of the moving DNA using a platinum (Pt) nanoelectrode gap. In this method, λDNAs were first deposited on a charged mica substrate surface and topographically scanned. A single DNA suitable for translocation was then identified and electrostatically attached to an AFM probe by pressing the probe tip down onto one end of the DNA strand without chemical functionalizations. Next, the DNA strand was lifted off the mica surface by the probe tip. The pulling force required to completely lift off the DNA agreed well with the theoretical DNA adhesion force to a charged mica surface. After liftoff, the captured DNA was translocated at varied speeds across the substrate and ultimately across the Pt nanoelectrode gap for electrical characterizations. Finally, finite element analysis of the effect of the translocating DNA on the conductivity of the nanoelectrode gap was conducted, validating the range of the gap current measured experimentally during the DNA translocation process.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"124-130"},"PeriodicalIF":1.7,"publicationDate":"2022-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241429/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"9672550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated Sensing Arrays Based on Organic Electrochemical Transistors 基于有机电化学晶体管的集成传感阵列

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-10-17 DOI: 10.1109/OJNANO.2022.3215135

Jinjie Wen;Jie Xu;Wei Huang;Cong Chen;Libing Bai;Yuhua Cheng

{"title":"Integrated Sensing Arrays Based on Organic Electrochemical Transistors","authors":"Jinjie Wen;Jie Xu;Wei Huang;Cong Chen;Libing Bai;Yuhua Cheng","doi":"10.1109/OJNANO.2022.3215135","DOIUrl":"10.1109/OJNANO.2022.3215135","url":null,"abstract":"Organic electrochemical transistors (OECTs), as one of the most promising sensing techniques, have shown various advantages compared to traditional means, which include ultra-high sensitivity, low driving voltage, and excellent biocompatibility for different bioelectrical and biochemical sensing. Moreover, to fully unleash the potential of OECT sensors, integrated sensing systems, especially OECT-based sensing arrays, are widely investigated due to spatiotemporal resolution, mechanical flexibility, high optical transparency, low power dissipation, and ease of fabrication. These advantages are attributed to the unique working mechanism of OECT, novel mixed ionic-electronic (semi)conductors, adaptable device geometry/structure, etc. In this review, advances in OECT-based sensing systems are systematically summarized, with a focus on the OECT-based sensing array. Furthermore, perspectives, concerning stability, cut-off frequency, integrating density, and power dissipation, are discussed based on recent studies on OECTs and their relevant sensor arrays. Last, a summary and an outlook of this field are provided.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"101-115"},"PeriodicalIF":1.7,"publicationDate":"2022-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9921324","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth 等离子体合成纳米硅:从分子到团簇和纳米颗粒生长

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-09-28 DOI: 10.1109/OJNANO.2022.3209995

Shota Nunomura;Kunihiro Kamataki;Takehiko Nagai;Tatsuya Misawa;Shinji Kawai;Kosuke Takenaka;Giichiro Uchida;Kazunori Koga

引用次数: 1

Hybrid Spintronics/CMOS Logic Circuits Using All-Optical-Enabled Magnetic Tunnel Junction 采用全光磁隧道结的混合自旋电子学/CMOS逻辑电路

IF 1.7

IEEE Open Journal of Nanotechnology Pub Date : 2022-07-06 DOI: 10.1109/OJNANO.2022.3188768

Surya Narain Dikshit;Arshid Nisar;Seema Dhull;Namita Bindal;Brajesh Kumar Kaushik

{"title":"Hybrid Spintronics/CMOS Logic Circuits Using All-Optical-Enabled Magnetic Tunnel Junction","authors":"Surya Narain Dikshit;Arshid Nisar;Seema Dhull;Namita Bindal;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3188768","DOIUrl":"10.1109/OJNANO.2022.3188768","url":null,"abstract":"Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been used to switch magnetization in various spintronic devices. However, their operation speed is fundamentally limited by the spin precession time that typically ranges in 10–400 ps. Such a time constraint severely limits the possible operation of these devices in high-speed systems. Optical switching using ultrashort laser pulses, on the other hand, is able to achieve sub-picosecond switching operation in magnetic tunnel junctions (MTJs). In this paper, all optically switched (AOS) MTJ has been used to design high speed and low power hybrid MTJ/CMOS based logic circuits such as AND/NAND, XOR/XNOR, and full adder. Owing to the ultra-fast switching operation of AOS-MTJ, the circuit level results show that the energy and speed of AOS-MTJ based logic circuits are improved by 85% and 97%, respectively, when compared to STT based circuits. In comparison to SOT based designs, the proposed logic circuits show 10% and 91% improvement in energy efficiency and speed, respectively.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"85-93"},"PeriodicalIF":1.7,"publicationDate":"2022-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9815875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62888354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2