Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance ( $R_{Q}$ ), quantum capacitance ( $C_{Q}$ ), and kinetic inductance ( $L_{K}$ ) are computed to be 6.46 k $\Omega$ , 5.57 fF/ $\mu\text{m}$ , and 58.17 nF/ $\mu$ m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.