Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik
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引用次数: 2

Abstract

The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance ( $R_{Q}$ ), quantum capacitance ( $C_{Q}$ ), and kinetic inductance ( $L_{K}$ ) are computed to be 6.46 k $\Omega$ , 5.57 fF/ $\mu\text{m}$ , and 58.17 nF/ $\mu$ m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.
潜在纳米互连应用的铜钝化之字形MgO纳米带
本工作探讨了铜钝化mgonr (Cu-MgO-Cu)的理论分析,以实现可能的纳米互连应用。基于密度泛函理论和非平衡格林函数的第一性原理计算进行了理论研究。原始mgonr (H-MgO-H)和Cu-MgO-Cu都是热力学稳定的金属,H-MgO-H相对更稳定。此外,使用双探针方法评估的I-V特性揭示了Cu-MgO-Cu的欧姆行为。进一步研究了Cu-MgO-Cu器件在纳米互连中的应用。计算得到的纳米级寄生分量如量子电阻($R_{Q}$)、量子电容($C_{Q}$)和动态电感($L_{K}$)分别为6.46 k $\Omega$、5.57 fF/ $\mu\text{m}$和58.17 nF/ $\mu$ m。此外,研究了纳米互连的延迟和功率延迟积(PDP)这两个重要属性。研究结果表明,具有低寄生参数的Cu-MgO-Cu纳米带可用于纳米互连应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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