基于不定导纳矩阵的纳米级CMOS I/O驱动器PSIJ建模

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Vijender Kumar Sharma;Jai Narayan Tripathi;Hitesh Shrimali
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引用次数: 0

摘要

过去的十年见证了特征尺寸从深亚微米到先进的纳米级CMOS器件的巨大缩小。在基于纳米级器件的高速系统中,由于电源波动引起的抖动预算是集成电路设计中的主要性能瓶颈之一。本文提出了一种利用检测估计法准确、有效地分析CMOS n级逆变器电源诱发抖动(PSIJ)的方法。基于不定导纳矩阵,考虑到电源源/大容量源/地源的存在,建立了多输入电路的简化双端口网络。对单级和n级CMOS逆变链的PSIJ闭合表达式进行了计算。该表达式也适用于n级链的任何中间阶段的PSIJ分析。为了验证目的,电路采用标准的28纳米CMOS技术设计,V$_\text{DD}$为1 V。分析结果与仿真和实验结果进行了比较。EDA仿真和实验测量结果的最大平均百分比误差分别为2.4%和13%。与现有的一些PSIJ建模技术进行了比较,结果表明该方法在加速因子和错误率方面有了显著提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Indefinite Admittance Matrix Based Modelling of PSIJ in Nano-Scale CMOS I/O Drivers
The past decade has witnessed a tremendous reduction in the feature size from the deep-submicron to the advanced nano-scale CMOS devices. In nanoscale devices based high-speed systems, the budgeting of jitter due to supply fluctuations is one of the major performance bottlenecks while designing integrated circuits (ICs). In this paper, an accurate and efficient method to analyse power supply induced jitter (PSIJ) in CMOS N-stage inverters is developed using the estimation-by-inspection method. Based on the Indefinite Admittance Matrix, a reduced two-port network is developed for a multiple-input circuit, considering the presence of the supply/bulk/ground sources. The closed-form expressions of the PSIJ have been evaluated for a single and N-stages CMOS inverter chain. The expression is also valid for the PSIJ analysis at any intermediate stage of the N-stage chain. For validation purpose, the circuits are designed in a standard 28 nm CMOS technology with V $_\text{DD}$ of 1 V. The analytical results are compared with the simulation and the experiments. The maximum mean percentage error for EDA simulation and experimentally measured results are 2.4% and 13%, respectively. The proposed analysis is compared with some of the existing PSIJ modelling techniques and shows a significant improvement in speed-up factor and error percentage.
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来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
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