室温下掺杂硼的p-金刚石与单层n-MoS2在PN结中的异相集成。

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-10-03 DOI:10.1021/acs.nanolett.5c04059

Akshay Wali,Roshan Padhan,Ralu Divan,Liliana Stan,Nihar Pradhan,Anirudha V Sumant

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引用次数: 0

摘要

金刚石由于其优越的导热性、大的电场强度和高载流子迁移率，在电力电子领域具有巨大的潜力。然而，缺乏可靠的室温n型传输阻碍了钻石基电子技术的任何进步。在这里，我们通过将n型二维（2D）二硫化钼（MoS2）单层与掺硼的p型单晶金刚石集成来绕过这一瓶颈，并展示了基于二维/三维异质结构的PN结二极管，该二极管在室温下工作，具有优异的整流特性。我们的二极管的最大正向电流密度（JD）为~ 4000 a /cm2，理想因子（η）值为~ 3.7，整流比（RR）为106。我们发现电流整流的起源源于大多数载流子在直接隧穿（DT）和福勒-诺德海姆（FN）隧穿机制驱动下的层间重组。我们的演示可以通过与二维材料的集成为金刚石基电力电子开辟新的途径。

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Heterogenous Integration of Boron-Doped p-Diamond with Monolayer n-MoS2 for PN Junctions Operating at Room Temperature.

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS2) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (JD) of ∼4000 A/cm2, an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 106. We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. Our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.