Nano Letters最新文献_第2页

Gold Nanoclusters with Wavelike Chiral Lattices Interact with Outer Membrane Protein BamA to Kill Gram-Negative Bacteria through the Screw-in Effect 具有波浪形手性晶格的金纳米团簇与外膜蛋白BamA相互作用，通过旋入效应杀死革兰氏阴性细菌

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-10 DOI: 10.1021/acs.nanolett.6c04485

Jinghua Hao,Chuyan Zhao,Bingjie Zhi,Xun Wang,Zhigang Li,Nali Zhu,Lingxiangyu Li,Yawei Wang,Guibin Jiang

{"title":"Gold Nanoclusters with Wavelike Chiral Lattices Interact with Outer Membrane Protein BamA to Kill Gram-Negative Bacteria through the Screw-in Effect","authors":"Jinghua Hao,Chuyan Zhao,Bingjie Zhi,Xun Wang,Zhigang Li,Nali Zhu,Lingxiangyu Li,Yawei Wang,Guibin Jiang","doi":"10.1021/acs.nanolett.6c04485","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04485","url":null,"abstract":"Resistance threatens to render antibiotics ineffective, which is posing a threat to global public health. Innovative strategies against drug-resistant bacteria are urgent. The outer membrane protein BamA, a hollow barrel with a pore of 2–4 nm, is a unique and essential structure in Gram-negative bacteria. We prepared chiral 3 nm gold nanoclusters (AuNCs) targeting BamA, exhibiting enantiomer-dependent antibacterial activity against drug-resistant Pseudomonas aeruginosa. The AuNCs with right-handed wavelike lattices (D-AuNCs) preferentially interacted with BamA through the screw-in effect, creating pores in the cell wall and resulting in bacterial death. P. aeruginosa was still susceptible to D-AuNCs due to their excellent antibiofilm activity even after 20 successive passages. D-AuNCs were applied to P. aeruginosa-infected skin wounds in mice, achieving superior wound healing compared to levofloxacin. Our work documented that chiral nanoclusters targeting BamA can efficiently kill P. aeruginosa through the screw-in effect, providing an innovative strategy to combat Gram-negative bacteria.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"37 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Reliable Sub-2-nm Hafnia Ferroelectric Tunnel Junction via All-Atomic Layer Deposition Growth 通过全原子层沉积生长的高可靠的亚2纳米铪铁电隧道结

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-10 DOI: 10.1021/acs.nanolett.6c02499

Renhao Xue,Yushi Sun,Ruizhan Yan,Zenghui Chang,Mansun Chan,Deep Jariwala,Xiwen Liu

{"title":"Highly Reliable Sub-2-nm Hafnia Ferroelectric Tunnel Junction via All-Atomic Layer Deposition Growth","authors":"Renhao Xue,Yushi Sun,Ruizhan Yan,Zenghui Chang,Mansun Chan,Deep Jariwala,Xiwen Liu","doi":"10.1021/acs.nanolett.6c02499","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c02499","url":null,"abstract":"Hafnia-based ferroelectric tunnel junctions (FTJs) are promising for post-Moore memories, offering fast, low-power polarization switching and compatibility with the technological maturity of the hafnia platform. Yet nanometer-scale barrier thinning, while desirable for higher speed and energy efficiency, introduces a critical reliability bottleneck. Here, we develop an all-atomic layer deposition (ALD) process for reliable sub-2 nm hafnia FTJs through precise growth and low-roughness interface formation. The resulting devices combine sub-2-V operation with a high breakdown field of ∼12.1 MV/cm, while maintaining stable ferroelectric switching through 1010 cycles without breakdown. Further interface optimization extends the resistance-state endurance toward 1010 cycles, reconciling aggressive barrier scaling with reliable device operation. We further exploit 4-bit nonvolatile multilevel operation to demonstrate an in-memory computing simulation with 95.78% accuracy. By combining the advantages of scaling with high reliability, this work advances hafnia-based FTJs toward high-speed, energy-efficient, and robust memory applications.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"18 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149374855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reversible Electric-Field-Induced Changes in the Thermal Resistance of Hexagonal Boron Nitride 可逆电场诱导六方氮化硼热阻的变化

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c03975

Amelia Schaeffer,Lena Fine,Aloyse Maille,Thomas Poirier,Joyce Christiansen-Salameh,Gustavo Alvarez,James H. Edgar,Zhiting Tian

{"title":"Reversible Electric-Field-Induced Changes in the Thermal Resistance of Hexagonal Boron Nitride","authors":"Amelia Schaeffer,Lena Fine,Aloyse Maille,Thomas Poirier,Joyce Christiansen-Salameh,Gustavo Alvarez,James H. Edgar,Zhiting Tian","doi":"10.1021/acs.nanolett.6c03975","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03975","url":null,"abstract":"Understanding the behavior of ultrawide-bandgap (UWBG) materials under high electric fields is essential for advancing next-generation power electronics. While electrical degradation processes have been widely studied, the influence of high electric fields on thermal transport remains largely unexplored. Here, we report the first experimental measurements of changing thermal resistance under an applied electric field in a UWBG material, using single-crystalline hexagonal boron nitride (h-BN) as a model system. We observe substantial, and sometimes reversible, changes in thermal resistance during prolonged exposure to a strong DC electric field. These results reveal a previously unrecognized sensitivity of phonon transport to high-field electrical stressing and show that thermal resistance can serve as a sensitive probe of electric-field-induced material evolution that remains undetected by conventional electrical characterization. More broadly, this work establishes thermal transport measurements as a powerful tool for investigating high-field phenomena in UWBG materials.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"6 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Answer Lies within the Puzzle Piece: PET-Derived Defect-rich MOFs Boosting Ethylene Glycol Oxidation for Total-Product PET Upcycling 答案就在拼图中：PET衍生的富含缺陷的mof促进了乙二醇氧化，从而实现了整个产品的PET升级回收

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c04225

Jiaqi Zhang,Tingting Chen,Zhicheng Tan,Chengjin Chen,Chen’an Zhou,Junliang Chen,Jianping Yang,Zhongjie Huang

{"title":"The Answer Lies within the Puzzle Piece: PET-Derived Defect-rich MOFs Boosting Ethylene Glycol Oxidation for Total-Product PET Upcycling","authors":"Jiaqi Zhang,Tingting Chen,Zhicheng Tan,Chengjin Chen,Chen’an Zhou,Junliang Chen,Jianping Yang,Zhongjie Huang","doi":"10.1021/acs.nanolett.6c04225","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04225","url":null,"abstract":"Chemical recycling of poly(ethylene terephthalate) (PET) is limited by harsh depolymerization conditions and the low-value utilization of terephthalic acid (TPA) and ethylene glycol (EG). Herein, we report a “one-stone-three-birds” strategy that couples PET depolymerization, TPA utilization, and EG upgrading for total-product upcycling. Waste PET serves as an in situ slow-release terephthalate precursor, whose gradual, incomplete hydrolysis dynamically perturbs metal–ligand stoichiometry, generating missing-linker defects and oxygen-deficient, coordinatively unsaturated environments in a bimetallic MOF (NiCo-PET). Relative to NiCo-MOF prepared from commercial TPA, NiCo-PET exhibits 67% higher spin concentration and enhanced EG oxidation, requiring only 1.29 V vs RHE at 50 mA cm–2 while achieving 93.6% formate Faradaic efficiency and stable operation for 24 h at 2 A cm–2. Operando analysis confirms favorable reconstruction into high-valence oxyhydroxides. This work valorizes both PET-derived products without additional purification or isolation, offering a sustainable route to total-product plastic upcycling.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"9 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Operando Imaging of Battery Interfaces through Combined Analysis of Broadband Optical Backgrounds and Raman Features 基于宽带光学背景和拉曼特征联合分析的电池界面操作成像

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c04439

Shengfu Wei,Zhengcheng Gu,Yufeng Zhang,Weigang Ma,Aoran Fan,Xing Zhang

{"title":"Operando Imaging of Battery Interfaces through Combined Analysis of Broadband Optical Backgrounds and Raman Features","authors":"Shengfu Wei,Zhengcheng Gu,Yufeng Zhang,Weigang Ma,Aoran Fan,Xing Zhang","doi":"10.1021/acs.nanolett.6c04439","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04439","url":null,"abstract":"Solid-state batteries promise improved safety and energy density, but their performance is governed by buried interfaces where ion transport, chemical reactions, and stress evolution are strongly coupled. Resolving these processes during operation remains challenging. Here, we present an operando spectroscopic strategy that jointly analyzes broadband optical backgrounds and characteristic electrolyte Raman features within a single measurement. Asymmetric least-squares baseline (ALS) estimation extracts broadband optical contrast associated with lithium distribution, while Raman band intensities and peak positions provide complementary information on interfacial chemistry and local stress estimates. This capability provides a unified optical framework for visualizing structural, chemical, and mechanical evolution at battery interfaces and offers a broadly applicable route to interrogate buried interphases in diverse electrochemical systems. More generally, by enabling real-time, multimodal insight into interfacial dynamics, this method advances efforts toward safer, longer-lasting, and more predictable energy-storage technologies.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"23 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “A Dual-Cascade Activatable Near-Infrared Fluorescent Probe for Precise Intraoperative Imaging of Tumor” 修正“双级联可激活近红外荧光探针用于肿瘤术中精确成像”

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c05075

Yanbin Feng,Haohao Yan,Xiaocheng Mou,Zuo Yang,Chaoqiang Qiao,Qian Jia,Ruili Zhang,Zhongliang Wang

引用次数: 0

Atomically Precise Au14V1 Clusters Selectively Block the Neutrophil Elastase-NETosis Axis 原子精确的Au14V1簇选择性阻断中性粒细胞弹性酶- netosis轴

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c03677

Sufei Zhou,Yili Wang,Guo Li,Hongli Yu,Chenxi Li,Si Sun,Qi Xin,Nan Song,Di Liu,Xiao-Dong Zhang,Hao Wang

{"title":"Atomically Precise Au14V1 Clusters Selectively Block the Neutrophil Elastase-NETosis Axis","authors":"Sufei Zhou,Yili Wang,Guo Li,Hongli Yu,Chenxi Li,Si Sun,Qi Xin,Nan Song,Di Liu,Xiao-Dong Zhang,Hao Wang","doi":"10.1021/acs.nanolett.6c03677","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03677","url":null,"abstract":"Neutrophil elastase (NE) is a key driver of neutrophil-mediated inflammation and tissue injury across diverse diseases. However, current NE inhibitors often lack sufficient target selectivity, limiting their therapeutic efficacy in suppressing inflammation and promoting organ repair. Here, we report that single-atom V doping programs atomically precise Au15 clusters into a relatively selective and potent NE inhibitor. The ultrasmall size of Au14V1 enables selective accommodation within the NE binding pocket. Multiscale mechanistic analyses demonstrated that Au14V1 inhibits NE through a reversible mixed inhibition mechanism with an inhibition rate of 87.6%, while exhibiting minimal activity toward closely related proteases, highlighting its preferential inhibition toward NE. In LPS- and CLP-induced systemic inflammatory injury models, Au14V1 reduced NE activity and NET formation, alleviated oxidative stress and inflammatory responses, mitigated tissue injury, and improved survival. These findings establish a single-atom engineering strategy for developing selective enzyme modulators and precise therapy targeting the NE-NETosis axis.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"7 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Foundations of Goldene Plasmonics 金等离子体的理论基础

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c03775

Jazmín Aragón Sánchez,Domenico Corona,Tommaso Giovannini,Olivia Pulci,Maurizia Palummo

引用次数: 0

Single-Reactor-Run Architecture of Cleaving Homoepitaxial GaN with Aperture-Driven Disordered BN Interlayers 用孔径驱动无序氮化硼夹层切割同外延GaN的单反应器运行结构

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c03268

Jungyong Shin,Bohyeon Kim,Anh Thi Dieu Nguyen,Nimphy Sarkar,Asif Ullah,Minhyeok Shin,Taenam Kwon,Sanghoon Kim,Seon Namgung,Kunook Chung

{"title":"Single-Reactor-Run Architecture of Cleaving Homoepitaxial GaN with Aperture-Driven Disordered BN Interlayers","authors":"Jungyong Shin,Bohyeon Kim,Anh Thi Dieu Nguyen,Nimphy Sarkar,Asif Ullah,Minhyeok Shin,Taenam Kwon,Sanghoon Kim,Seon Namgung,Kunook Chung","doi":"10.1021/acs.nanolett.6c03268","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03268","url":null,"abstract":"High-quality freestanding GaN membranes are fabricated using a single-reactor-run metal–organic chemical vapor deposition. The procedure begins with the growth of a single-crystalline GaN template, followed by the formation of a 20 nm-thick full-coverage disordered BN layer on GaN, which remains stable under high-temperature GaN growth conditions. We introduce a heat-treatment step to generate numerous nanoscale apertures in the BN layer, enabling aperture-mediated homoepitaxial regrowth. Meanwhile, the BN layer suppresses strong epitaxial bonding, where the regrown GaN is mechanically detachable from the GaN template. In addition, multiple disordered BN interlayer formations are established, enabling epitaxial lateral overgrowth (ELOG). Moreover, GaN Schottky diodes are fabricated to demonstrate minimal material degradation through the aperture-mediated lift-off process, enhanced device performance with BN-assisted ELOG, and the feasibility of ultralight wearable UV detectors. This approach eliminates the need for ex situ transfer or substrate-specific lift-off processes, providing a simple and thermally robust platform for manufacturing freestanding wide-bandgap semiconductor membranes.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"7 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149368380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resolving Overlapping Signals in Quantum Relaxometry Enabled by Spectral Hole Burning 光谱烧洞实现的量子弛豫测量中重叠信号的解析

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c04198

Fei Kong,Zhehua Huang,Zhengze Zhao,Pengju Zhao,Zhecheng Wang,Ya Wang,Fazhan Shi

引用次数: 0