Nano Letters最新文献_第3页

Scintillation as an Extreme Exciton Density Regime in Colloidal Nanocrystals 闪烁是胶体纳米晶体中的一种极端激子密度状态

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-09 DOI: 10.1021/acs.nanolett.6c04351

Burak Guzelturk,Benjamin T. Diroll

引用次数: 0

Emergent Giant Topological Hall Effect at the van der Waals Ferromagnet/Topological Insulator Interface 范德华铁磁体/拓扑绝缘体界面的涌现巨拓扑霍尔效应

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c03255

Devyani Sharma,Gagan Rastogi,Abhinab Mohapatra,R. Ganesan,P. S. Anil Kumar

{"title":"Emergent Giant Topological Hall Effect at the van der Waals Ferromagnet/Topological Insulator Interface","authors":"Devyani Sharma,Gagan Rastogi,Abhinab Mohapatra,R. Ganesan,P. S. Anil Kumar","doi":"10.1021/acs.nanolett.6c03255","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03255","url":null,"abstract":"Two-dimensional (2D) van der Waals (vdW) magnet-based heterostructures provide a vital platform for manipulating magnetic ground states and hosting complex spin textures. The topological Hall effect (THE) is a powerful tool for probing these textures in such systems. However, achieving a sizable THE in 2D vdW ferromagnets remains challenging due to the absence of broken inversion symmetry and sufficiently strong spin–orbit coupling (SOC). Here, we report an emergent giant topological Hall resistivity of 6.9 μΩ·cm at 10 K by interfacing the 2D ferromagnet Fe3GeTe2 (FGT) with the topological insulator BiSbTeSe2 (BSTS). Systematic temperature- and thickness-dependent studies suggest the origin of this pronounced signal to be the interfacial Dzyaloshinskii–Moriya interaction (DMI). Furthermore, temperature-field mapping reveals the coexistence of two distinct phases that we identify as having opposite topological charge. Our results establish these vdW ferromagnet/topological insulator heterostructures as a robust platform for enhanced interfacial THE, opening new avenues for high-efficiency topological spintronics.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"24 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoluminescence-Driven Quasi-BICs in Photonic Nanomembranes for Active Refractometric Sensing 用于主动折射传感的光子纳米膜中光致发光驱动的准bic

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c04599

Ya-Lun Ho,Hsin-Chang Lin,Wei-Che Chang,Shao-Ku Huang,Yen-Ju Wu,Jui-Han Fu,Vincent Tung,Yang-Chun Lee,Kuniaki Konishi,Masanobu Iwanaga,Chun-Hao Chiang

{"title":"Photoluminescence-Driven Quasi-BICs in Photonic Nanomembranes for Active Refractometric Sensing","authors":"Ya-Lun Ho,Hsin-Chang Lin,Wei-Che Chang,Shao-Ku Huang,Yen-Ju Wu,Jui-Han Fu,Vincent Tung,Yang-Chun Lee,Kuniaki Konishi,Masanobu Iwanaga,Chun-Hao Chiang","doi":"10.1021/acs.nanolett.6c04599","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04599","url":null,"abstract":"Quasi-bound states in the continuum (quasi-BICs) offer a powerful platform for refractometric sensing by combining narrow resonances with strong electromagnetic confinement, promising high spectral resolution and large figures of merit (FOM). In practice, however, these advantages are often compromised by stringent angular alignment in passive transmission/reflection interrogation. Here, we demonstrate an active sensing platform that couples the defect-related photoluminescence (PL) of a freestanding silicon nitride nanomembrane to quasi-BIC modes. The substrate-free architecture suppresses radiation leakage and sustains tightly confined high-Q resonances, while emission-based readout bypasses stringent angular alignment. The resulting PL resonances exhibit line widths of 0.17 nm (Q ≈ 4000) in air and 0.26 nm in water. In aqueous sensing, the platform achieves a FOM of 250, substantially exceeding representative values reported for passive quasi-BIC sensors in the visible regime. This synergy translates the high-Q advantage of quasi-BICs into a practical active platform for high-performance refractometric and surface-binding sensing.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"69 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrathin SrTiO3 Capping Stabilizes the Surface Chemistry of Brownmillerite Ferrites during Reduction 超薄SrTiO3盖层稳定了还原过程中褐磨铁体的表面化学性质

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c04202

Jiayue Wang,Aarushi Khandelwal,Martin Gonzalez,Yidi Liu,Iradwikanari Waluyo,Adrian Hunt,Harold Y. Hwang

引用次数: 0

Photoinduced Carrier Doping of α-RuCl3 through Interlayer Charge Transfer 层间电荷转移α-RuCl3的光诱导载流子掺杂

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c04835

Ting Zheng,Neema Rafizadeh,Wai-Lun Chan,Zhenhua Ni,Hui Zhao

引用次数: 0

Defect-Initiated Anisotropic Oxidation in Two-Dimensional GaSe 二维GaSe中缺陷引发的各向异性氧化

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c04301

Song Hao,Kexuan Li,Mingrui Zhou,Changkai Guo,Xingchi Liu,Ziwen Li,Wenjie Xu,Kailong Yu,Zhaoming Liang,Buwei Wang,Xiangyu Xing,Dong Yang,Zailan Zhang,Zhesheng Chen,Tao Xu,Shi-Jun Liang

{"title":"Defect-Initiated Anisotropic Oxidation in Two-Dimensional GaSe","authors":"Song Hao,Kexuan Li,Mingrui Zhou,Changkai Guo,Xingchi Liu,Ziwen Li,Wenjie Xu,Kailong Yu,Zhaoming Liang,Buwei Wang,Xiangyu Xing,Dong Yang,Zailan Zhang,Zhesheng Chen,Tao Xu,Shi-Jun Liang","doi":"10.1021/acs.nanolett.6c04301","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04301","url":null,"abstract":"Oxidation governs the stability and functional conversion of two-dimensional semiconductors, yet its propagation through layered crystals remains poorly understood. Here, we investigate the thickness-dependent oxidation of GaSe using optical spectroscopy, cross-sectional microscopy, and first-principles calculations. Experiments reveal concurrent top-down and edge-initiated oxidation, accompanied by Se redistribution and transient Ga2Se3 formation. Calculations identify Se vacancies as favorable sites for O2 adsorption and activation, which weaken neighboring Ga–Se bonds and promote oxygen incorporation. Molecular O2 faces a 4.03 eV barrier when penetrating a monolayer Ga2O3 model, compared with 0.54 eV along a GaSe van der Waals gap. This contrast supports interlayer diffusion as a plausible pathway for lateral oxidation, consistent with the pronounced thickness dependence and spatial anisotropy observed experimentally. Oxidation also yields a progression from p-type GaSe through ambipolar Ga2O3/GaSe heterostructures to n-type Ga2O3, whose devices retain stable characteristics after 300 °C air annealing.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"14 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultralow-Loss Femtosecond Laser Slicing of Lithium Niobate Enabled by Anisotropic Thermal Dissipation-Guided Vector Scanning 各向异性热耗散引导矢量扫描实现铌酸锂的超低损耗飞秒激光切片

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-07 DOI: 10.1021/acs.nanolett.6c04565

Xin Zhang,Yue-Zhang Sun,De-Rong Sun,Zhi-Yong Hu,Qi-Dai Chen,Xue-Qing Liu

引用次数: 0

High-Q/V Plasmonic Metasurfaces Enable Ultrafast Probing of Long-Lived Carrier Relaxation in Potassium 高q /V等离子体超表面实现了对钾中长寿命载流子弛豫的超快探测

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-06 DOI: 10.1021/acs.nanolett.6c04123

Qile Wu,Peng Tan,Zhaoqi Yuan,Weixi Lu,Shizhuang Wang,Yanan Dai,Jia Zhu,Shining Zhu,Lin Zhou

{"title":"High-Q/V Plasmonic Metasurfaces Enable Ultrafast Probing of Long-Lived Carrier Relaxation in Potassium","authors":"Qile Wu,Peng Tan,Zhaoqi Yuan,Weixi Lu,Shizhuang Wang,Yanan Dai,Jia Zhu,Shining Zhu,Lin Zhou","doi":"10.1021/acs.nanolett.6c04123","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04123","url":null,"abstract":"Alkali metals are promising materials for low-loss plasmonics, because of their intrinsically weak optical damping and favorable free-electron response. However, their high chemical reactivity and weak optical absorption make their ultrafast carrier dynamics difficult to access conventionally. Here, we investigate the long-lived carrier relaxation in potassium using a mode-engineered concave metasurface as a resonantly enhanced optical readout. A strongly confined hybrid mode with a high quality-factor-to-mode-volume ratio (Q/V) greatly enhances the sensitivity to pump-induced dielectric perturbations. Transient-reflectance spectroscopy resolves two characteristic relaxation times of ∼0.5 ps and ∼8 ps due to the electronic redistribution and electron–phonon-mediated energy relaxation, respectively. Two-temperature-model analysis yields a record-low electron–phonon coupling factor, consistent with weak electron-to-lattice energy transfer in potassium. These results demonstrate high-Q/V mode engineering as an effective strategy for accessing weak nonequilibrium carrier dynamics in low-loss plasmonic materials and for exploring light–matter interactions in minimally dissipative plasmonic environments.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"9 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electroelasticity-Regulated Vacancy Diffusion Enables Frequency-Adaptive Neuromorphic Perception and Control 电弹性调节的空位扩散实现频率自适应神经形态感知和控制

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-06 DOI: 10.1021/acs.nanolett.6c04459

Tao Zeng,Zhanfeng Wang,Lanxin Jia,Zhanqi Zhou,Peng Li,Zhongran Liu,Bingjie Dang,Youdi Gu,Shu Shi,Kaixuan Sun,Zhongqiang Wang,Kostya S. Novoselov,He Tian,Xiaobing Yan,Haiyang Xu,Jingsheng Chen

{"title":"Electroelasticity-Regulated Vacancy Diffusion Enables Frequency-Adaptive Neuromorphic Perception and Control","authors":"Tao Zeng,Zhanfeng Wang,Lanxin Jia,Zhanqi Zhou,Peng Li,Zhongran Liu,Bingjie Dang,Youdi Gu,Shu Shi,Kaixuan Sun,Zhongqiang Wang,Kostya S. Novoselov,He Tian,Xiaobing Yan,Haiyang Xu,Jingsheng Chen","doi":"10.1021/acs.nanolett.6c04459","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04459","url":null,"abstract":"Emulating frequency-dependent synaptic plasticity requires artificial devices capable of integrating temporal inputs and adapting their responses. Here, we demonstrate electroelasticity-regulated vacancy diffusion in MoSe2 memristors as a physical mechanism for frequency-adaptive synaptic dynamics. An applied electric field induces lattice deformation that lowers the vacancy diffusion barrier, whereas poststimulus electroelastic relaxation progressively restores the barrier, creating a dynamically evolving diffusion landscape. This coupled electroelastic–ionic process gives rise to intrinsic second-order memristive dynamics and enables frequency- and history-dependent plasticity, including pair- and triplet-spike-timing-dependent plasticity and Bienenstock–Cooper–Munro-type learning with a sliding modification threshold. Leveraging these dynamics, memristor-based spiking neural networks realize adaptive neuromorphic functions spanning composite color–direction perception and autonomous drone control. These results establish electroelastic regulation of vacancy diffusion as a materials-level mechanism for translating temporal input statistics into adaptive synaptic responses, providing a pathway toward neuromorphic systems with frequency-adaptive perception and control.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"9 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen Evolution along Grain Boundaries of LiNi0.5Co0.2Mn0.3O2 Particles as an Early Stage Degradation of High-Voltage All-Solid-State Batteries 高压全固态电池早期降解过程中LiNi0.5Co0.2Mn0.3O2颗粒晶界上的氧析出

IF 10.8 1区材料科学

Nano Letters Pub Date : 2026-11-06 DOI: 10.1021/acs.nanolett.6c04111

Aki Nakamura,Yasuhiro Suzuki,Yuya Itami,Minoru Kuzuhara,Yuki Nomura,Koji Hiraoka,Kazuo Yamamoto,Kiyotaka Nakano,Takuya Masuda,Takeshi Yajima,Yasutoshi Iriyama

{"title":"Oxygen Evolution along Grain Boundaries of LiNi0.5Co0.2Mn0.3O2 Particles as an Early Stage Degradation of High-Voltage All-Solid-State Batteries","authors":"Aki Nakamura,Yasuhiro Suzuki,Yuya Itami,Minoru Kuzuhara,Yuki Nomura,Koji Hiraoka,Kazuo Yamamoto,Kiyotaka Nakano,Takuya Masuda,Takeshi Yajima,Yasutoshi Iriyama","doi":"10.1021/acs.nanolett.6c04111","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04111","url":null,"abstract":"Operating sulfide-based all-solid-state batteries (SSBs) at high voltages increases energy density but induces O2 release from cathode materials, degrading battery performance. To elucidate this early stage degradation, SSBs were fabricated using LiNi0.5Co0.2Mn0.3O2 (NCM523) particles with distinct grain-boundary (GB) densities: single-crystalline (SC) or polycrystalline (PC). Gas analysis of SSBs during charging up to 5.0 V (vs Li/Li+) reveals that the PC-cell produces 27 times more O2 than the SC-cell despite having identical total surface areas. STEM-EELS analysis reveals 2–5 nm thick rock-salt phase formation across particle surfaces and along GBs regardless of the crystallinity, indicating that O2 evolution in the PC-cell occurs mainly along GBs of NCM523 particles. Because surface coating on the PC substantially suppresses O2 evolution, oxygen-vacancy formation initiated at the particle surface propagates O2 release along the GBs. Consequently, suppressing surface oxygen-vacancy formation represents a critical strategy for improving the long-term stability of high-voltage SSBs.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"14 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149360548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0