Journal of Materials Chemistry C最新文献

{"title":"3D printing of self-powered piezoelectric sensors enabled gait recognition via deep learning†","authors":"Xiaofei Zhang, Bingyu Huang, Kailong Xu, Shuzhi Sam Ge and Xiangxia Wei","doi":"10.1039/D5TC01211B","DOIUrl":"https://doi.org/10.1039/D5TC01211B","url":null,"abstract":"<p >Wearable gait analysis systems leveraging piezoelectric sensing and artificial intelligence hold significant potential for non-invasive monitoring of neurodegenerative disorders. However, challenges remain in current gait analysis due to the high computational costs, the algorithmic complexity, and data privacy constraints. Here, we provide a self-powered gait recognition system based on flexible polyvinylidene fluoride (PVDF) piezoelectric sensors. By combining newly developed electro-assisted three-dimensional (3D) printing, the printed PVDF sensor not only demonstrates a high pressure sensitivity of 75.7 mV kPa<small>⁻¹</small>, but is also endowed with exceptional cyclic stability (&gt;6000 cycles) and robust environmental adaptability. Subsequently, by leveraging a hybrid convolutional neural network-long short-term memory (CNN-LSTM) framework for the extraction of spatial features and temporal dependencies, the gait recognition system achieves a high accuracy of 98.7% of nine physiological postures. In addition, the system also exhibits 93.7% accuracy in identifying Parkinson's gait anomalies, such as stair climbing, falling, and limping, outperforming the conventional machine learning algorithms. This integration of 3D printing and deep learning bridges the gap between wearable devices and artificial intelligence-enhanced diagnostics, offering a scalable platform for personalized disease management.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 29","pages":" 14875-14885"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermally driven resonance tuning in nanobipyramid plasmonic substrates†","authors":"Arka Jyoti Roy, Sai Rama Krishna Malladi and Shourya Dutta-Gupta","doi":"10.1039/D5TC01410G","DOIUrl":"https://doi.org/10.1039/D5TC01410G","url":null,"abstract":"<p >Plasmonic nanoparticles have captivated researchers due to their exceptional optical properties and ability to manipulate light at the nanoscale and have been utilized in various applications. This article explores the shape control of gold nano bipyramid (AuNBP) particles to achieve highly broadband spectral tunability. By tailoring heating profiles, we can adjust the resonance wavelength by over 250 nm. Using <em>in situ</em> reflection spectroscopy, SEM analysis, and <em>in situ</em> TEM analysis, we demonstrate that the resonance shift results from changes in the shape and aspect ratio of the anisotropic particles. Heating the nano bipyramid-coated substrates from room temperature to 400 °C allows us to effectively tune the resonance wavelength between 750 nm and 530 nm. Additionally, localized heating of the substrates enables the fabrication of substrates with locally modulated resonance wavelengths. This study provides insights into the impact of temperature on the shape change of AuNBP and aids in designing custom-tailored plasmonic substrates for applications in tunable optical filters, biosensing and non-linear signal enhancement.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 28","pages":" 14270-14282"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductive polymer doped carbon electrode for high-performance hole transport layer free perovskite photovoltaics and self-powered photodetectors†","authors":"Dongchang Shi, Hongkai Zhang, Xian Zhang, Jiayu Chen, Fanxiu Feng, Jingyi Wang, Yue Zhang, Panjie Shao, Zhixin Zhao, Yan Guan, Fangzhou Liu, Yangyang Zhang, Cuncun Wu, Lixin Xiao and Shijian Zheng","doi":"10.1039/D5TC01386K","DOIUrl":"https://doi.org/10.1039/D5TC01386K","url":null,"abstract":"<p >Carbon-based perovskite optoelectronic devices without a hole transport layer (HTL) offer significant advantages, including simplified fabrication, low cost, and excellent stability, positioning them as highly promising candidates for optoelectronic applications. However, the direct contact between carbon electrodes and the perovskite layer leads to substantial non-radiative recombination losses at the interface, limiting their performance compared to devices incorporating HTLs. Herein, we incorporate polypyrrole (PPy), a conductive polymer with defect passivation capabilities, into the carbon paste to fabricate HTL-free carbon electrode perovskite solar cells. PPy not only passivates surface defects in the perovskite but also facilitates hole transport, thereby enhancing the hole collection efficiency of the carbon electrodes. As a result, the power conversion efficiency (PCE) of the HTL-free carbon-based perovskite solar cells (C-PSCs) achieved 18.48%, with an indoor efficiency of 26.74% at 2000 lux. These values represent superior performance compared to previously reported HTL-free C-PSCs in literature under both standard and indoor lighting conditions. Furthermore, these devices demonstrated potential as self-powered photodetectors, exhibiting a dark current density of 9.84 × 10<small>⁻¹⁰</small> A cm<small>⁻²</small> and a maximum detectivity of 1.96 × 10<small>¹³</small> Jones, significantly outperforming most reported carbon-electrode-based photodetectors. This work highlights the effectiveness of the carbon electrode design in enabling high-performance HTL-free carbon-based perovskite photovoltaic and photodetector devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 28","pages":" 14498-14505"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detection of traps in thin-film transistors using evolutionary algorithms†","authors":"J. A. Jiménez-Tejada, A. Romero, S. Mansouri, M. Erouel, L. El Mir and M. J. Deen","doi":"10.1039/D5TC00580A","DOIUrl":"https://doi.org/10.1039/D5TC00580A","url":null,"abstract":"<p >In this work, we present a novel approach to analyzing the current-related characteristics of thin-film transistors (TFTs). We introduce a method to detect and quantify different types of trapped charges from current–voltage curves exhibiting hysteresis, as well as to track the evolution of charge density over time during experiments. To achieve this, we use a previously developed compact model for TFTs that accounts for contact effects and includes a time-dependent threshold voltage. This model is combined with an evolutionary parameter extraction procedure for trap detection. We demonstrate that our time-dependent threshold voltage model is highly adaptable to varying conditions. In fact, our method, which has been successfully applied to detect traps induced by hysteresis, is also capable of identifying unexpected traps from environmental factors. While our evolutionary procedure is slower than traditional methods, which typically rely on extracting constant values for the threshold voltage and sub-threshold swing, it offers a distinct advantage in that it can differentiate between the effects of various traps from a single current–voltage curve and allows continuous monitoring of trapped charge density throughout the experiment. To validate our approach, we conduct an experiment involving the measured output and transfer characteristics of poly(3-hexylthiophene) (P3HT) transistors with varying channel lengths, tested in a room-temperature environment.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 27","pages":" 14029-14043"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc00580a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced electrical properties and stability of solution processed IYZO thin film transistors by controlling deep level oxygen vacancies†","authors":"Bu Kyeong Hwang, Hyeon Woo Kim, Bo Ram Lee, Eun Jin Park, Hyunsung Jung, Min-Kyu Son, Sung Beom Cho, Hyeon Jin Jung, Moonsuk Yi and Soo Won Heo","doi":"10.1039/D4TC05455E","DOIUrl":"https://doi.org/10.1039/D4TC05455E","url":null,"abstract":"<p >In this study, ytterbium (Yb) was introduced as a dopant to improve the stability of indium–zinc oxide (IZO) thin film transistors (TFTs). The stability and electrical performance of indium–ytterbium–zinc oxide (IYZO) TFTs were compared with those of indium–gallium–zinc oxide (IGZO) TFTs with gallium (Ga) as a typical dopant. In particular, under a negative bias illumination stress (NBIS), among the various operating condition stability evaluations, the Δ threshold voltage (<em>V</em><small>_th</small>) of the IGZO (Ga: 3%) TFT (−7.6 V) was 23% better than that of the IZO TFT (−9.8 V); however, Δ<em>V</em><small>_th</small> of the IYZO (Yb: 3%) (−5.8 V) TFT was not only 41% better than that of the IZO TFT but also 19% better than that of the IGZO TFT. Under NBIS conditions, the deep level oxygen vacancy (V<small>_O</small>) donates electrons to the conduction band minimum, causing a large negative shift in <em>V</em><small>_th</small>. Therefore, the improved stability of the IYZO TFT indicates that Yb doping effectively reduced the formation of defect state like deep level V<small>_O</small>, which was demonstrated by theoretical density functional calculations. In addition, the mobility of the IYZO TFT was 12.22 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small>, which was 3% better than that of the IZO TFT (11.83 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small>). Conversely, the mobility of the IGZO TFT was 10.34 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small>, demonstrating a 13% decrease compared to the IZO TFT. Notably, Ga doping improved the stability but degraded the electrical performance, whereas Yb doping improved the stability and electrical properties.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 29","pages":" 14910-14923"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Double-hybrid density functionals applied to a large set of INVEST systems: validating the (SOS1-)PBE-DH-INVEST expressions†","authors":"P. Maiz-Pastor, A. J. Pérez-Jiménez and J. C. Sancho-García","doi":"10.1039/D5TC01799H","DOIUrl":"https://doi.org/10.1039/D5TC01799H","url":null,"abstract":"<p >We thoroughly assess here the recently developed PBE-DH-INVEST expression and its SOS1-PBE-DH-INVEST variant, both belonging to the family of double-hybrid (DH) density functionals, against the NAH159 dataset of organic molecules displaying a very low (positive or even negative) energy gap, Δ<em>E</em><small>_ST</small>, between the lowest-energy excited-state of singlet (S<small>₁</small>) and triplet (T<small>₁</small>) multiplicity. The NAH159 dataset comprises a large set of substituted derivatives of azulene, azupyrene, isopyrene, heptalene, cyclazine (or monoazaphenalene), pentazine (or pentaazaphenalene), and heptazine (or heptaazaphenalene) systems, thus covering most of the chemical templates so far discovered displaying Δ<em>E</em><small>_ST</small> &lt; 0 values. The performance of any model able to deliver correct Δ<em>E</em><small>_ST</small> values, both in sign and magnitude, is critical for further studies in OLEDs and related applications. Given the robustness and accuracy of the results obtained by the (SOS1-)PBE-DH-INVEST functionals, together with their moderate basis set dependence, we can recommend them as an alternative to more costly wavefunction-based methods or other DH density functionals.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 28","pages":" 14211-14223"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc01799h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of hydrogels based on carbon dots and rare earths in dual-wavelength UV excitation adjustable multicolor fluorescence†","authors":"Jiajia Du, Daohai Zhang, Kunlan Diao, Dongju Liu, Yupeng Hu, Zhi Lei, Jun Tong and Zhongli Wu","doi":"10.1039/D5TC01146A","DOIUrl":"https://doi.org/10.1039/D5TC01146A","url":null,"abstract":"<p >This study presents a multifunctional hydrogel engineered by integrating carbon dots (CDots) and lanthanide metal ions (Ln<small>³⁺</small>), which exhibits tunable multicolor fluorescence under dual-wavelength UV excitation (254 nm and 365 nm). Systematic characterization <em>via</em> scanning electron microscopy (SEM), mechanical analysis, and fluorescence spectroscopy revealed three key features: distinct chromatic transitions between excitation wavelengths, favorable mechanical robustness, and long-term stability. The programmable fluorescence behavior, achieved through precise Ln<small>³⁺</small> stoichiometric control and CDot-mediated energy transfer mechanisms, enables optical encryption with dual-excitation modes. Furthermore, the hydrogel demonstrates visual ion detection capabilities, exhibiting rapid fluorescence responses toward Zn<small>²⁺</small> and K<small>⁺</small><em>via</em> specific coordination interactions. This dual-functional hydrogel advances the development of intelligent materials for anti-counterfeiting technologies and environmental monitoring applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 29","pages":" 15111-15120"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Generating cyan emission via ammonia-thermal nitridation: Na18−xCa13+xMg5(PO4−yNy)18:Eu2+†","authors":"Nakyung Lee, Docheon Ahn and Jakoah Brgoch","doi":"10.1039/D5TC01824B","DOIUrl":"https://doi.org/10.1039/D5TC01824B","url":null,"abstract":"<p >As phosphor-converted LEDs continue to displace traditional light technologies, developing new down-conversion materials remains essential for improving color quality and efficiency. This research introduces a cyan-emitting oxynitride phosphor, Na<small>_13.57</small>Ca<small>_17.43</small>Mg<small>₅</small>(PO<small>_3.75</small>N<small>_0.25</small>)<small>₁₈</small>:Eu<small>²⁺</small>, synthesized through ammonolysis of the oxide, Na<small>₁₈</small>Ca<small>₁₃</small>Mg<small>₅</small>(PO<small>₄</small>)<small>₁₈</small>. The presence of nitrogen was validated using a suite of advanced analytical techniques, including Rietveld co-refinement of synchrotron X-ray and neutron diffraction data, X-ray photoelectron spectroscopy, thermogravimetric analysis, and diffuse reflectance spectroscopy. This oxynitride phosphor was subsequently shown to exhibit a broad excitation spectrum covering the UV (&gt;350 nm) to the violet (425 nm) portions of the electromagnetic spectrum, down-converting the absorbed light, generating an efficient cyan emission. A prototype light using the new Eu<small>²⁺</small>-substituted oxynitride produced a functional (daylight) white light when paired with a violet LED and commercial blue and red-emitting phosphor. This research not only introduces a promising phosphor for LED applications but also highlights a practical approach to obtain novel oxynitrides from disordered oxides with a cost-efficient synthesis method, potentially paving the way for advancements in phosphor-based lighting technologies.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 27","pages":" 14069-14078"},"PeriodicalIF":5.7,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc01824b?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cr3+-doped CaMgGe2O6 phosphors: crystal field effects and the synergistic role of FIR and fluorescence lifetime in multi-mode optical thermometry†","authors":"Yosra Bahrouni, Ikhlas Kachou, Kamel Saidi, Christian Hernández-Álvarez, Mohamed Dammak and Inocencio R Martín","doi":"10.1039/D5TC01229E","DOIUrl":"https://doi.org/10.1039/D5TC01229E","url":null,"abstract":"<p >Luminescence thermometry has attracted growing interest for its potential in remote and non-contact temperature sensing. Among luminescent ions, Cr<small>³⁺</small> is widely studied for optical thermometry using fluorescence intensity ratio (FIR), but its fluorescence lifetime (FL) thermometric potential remains largely undiscovered. In this study, we present a detailed spectroscopic investigation of Cr<small>³⁺</small>-doped CaMgGe<small>₂</small>O<small>₆</small>, demonstrating the complementary advantages of FIR and FL-based thermometry. X-Ray diffraction (XRD) confirms the monoclinic phase with high crystallinity, while diffuse reflectance spectroscopy provides insight into the crystal field strength (<em>D</em><small>_q</small>/<em>B</em> ≈ 1.81) and optical band gap (<em>E</em><small>_g</small>). Under 405 nm excitation, we systematically analyze the photoluminescence and temperature-dependent luminescence behavior. The multi-mode thermal sensing approach reveals that FIR (<em>I</em><small>₅₈₉</small>/<em>I</em><small>₇₇₁</small>) achieves a remarkable maximum sensitivity of 1.4% K<small>⁻¹</small> at 390 K, with an exceptionally low temperature uncertainty (∼0.11 K at room temperature), establishing its reliability for precise temperature detection. Meanwhile, FL thermometry exhibits an even higher maximum sensitivity of 2.5% K<small>⁻¹</small> at 478 K, underscoring its strong potential as an alternative or complementary technique. By integrating both methods, we achieve enhanced accuracy, broader temperature coverage, and improved adaptability to various sensing environments. This work highlights the first comprehensive demonstration of FL-based thermometry in Cr<small>³⁺</small>-doped phosphors, paving the way for optimized multi-mode luminescent thermal sensors and reinforcing the critical role of both the host matrix and advanced spectroscopic characterization.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 26","pages":" 13415-13425"},"PeriodicalIF":5.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144550794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance n-type stretchable OFETs enabled by molecular engineering of flexible polymers†","authors":"Qian Che, Tianhao Zhang, Weifeng Zhang, Jiadi Chen, Yunchao Zhang, Zhihui Chen, Youjia Li, Lei Yang, Liping Wang and Gui Yu","doi":"10.1039/D5TC01650A","DOIUrl":"https://doi.org/10.1039/D5TC01650A","url":null,"abstract":"<p >Stretchable organic field-effect transistors (OFETs) have emerged as promising semiconductor devices for flexible electronics, combining mechanical deformability with stable electrical performance. However, developing high-performance n-type stretchable semiconductors remains challenging. In this study, we designed three novel n-type polymers (<strong>P1–P3</strong>) by incorporating flexible chains into an azo-benzodifurandione-based oligo(<em>p</em>-phenylene vinylene) (azo-BDOPV) backbone, achieving balanced mechanical and electrical properties. Using polydimethylsiloxane substrates, gold and silver nanowire electrodes, and polyvinyl alcohol (PVA) dielectric layers, we fabricated fully stretchable top-gate n-type OFETs. The devices demonstrated excellent initial electron mobilities of 0.44, 0.34, and 0.52 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small> for <strong>P1–P3</strong> respectively, with <strong>P3</strong> showing superior performance. Remarkably, <strong>P3</strong> maintained mobilities of 0.48–0.29 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small> (strain parallel to the charge transport direction) and 0.42–0.26 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small> (strain perpendicular to the charge transport direction) under 15–50% deformation, demonstrating exceptional mechanical–electrical stability. All three polymer films show uniform surface morphology and molecular stacking, with polymer <strong>P3</strong> having the most ordered edge-on stacking, which is consistent with its excellent device performance. These results highlight the effectiveness of molecular engineering in developing stretchable n-type semiconductors with mechanical flexibility and efficient charge transport, providing valuable insights for the design and application of high-performance fully stretchable OFETs, advancing the development of next-generation flexible and wearable electronics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 28","pages":" 14478-14486"},"PeriodicalIF":5.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}