Savita, Adarash Kumar Shukla and Anupam Bhattacharya
{"title":"Revisiting the excited state proton transfer dynamics in N-oxide-based fluorophores: a keto–enol/enolate interplay to detect trace water in organic solvents†","authors":"Savita, Adarash Kumar Shukla and Anupam Bhattacharya","doi":"10.1039/D4TC02651A","DOIUrl":"https://doi.org/10.1039/D4TC02651A","url":null,"abstract":"<p >This work highlights the unique proton transfer ability observed in cyanoquinoxaline <em>N</em>-oxide-based fluorophores. A fluorophore HCQ was synthesized for this purpose, and a detailed study of its photophysical characteristics was undertaken. Preliminary structural characterization by NMR and single crystal XRD techniques indicated the possibility of a ground-state proton transfer (GSPT) reaction in the molecule. The absorbance and fluorescence spectroscopic studies further confirmed its sensitivity to the solvent environment and the possibility of the existence of three species enol (E)/enolate (RO<small><sup>−</sup></small>)/keto (K), with the predominance for a particular form based on the polarity of the solvent. Measurement of the fluorescence lifetime of the molecule allowed us to establish the role of protic solvents in the deprotonation of HCQ. In addition, the involvement of water in crystal packing and the significantly reduced lifetime of the molecule in water indicated the involvement of GSIPT and ESIPT processes. Based on the unique response of the molecule in the aqueous medium, its application for water detection in organic solvents was explored. HCQ demonstrated a water-induced fluorescence switch from its enol (E) form to the deprotonated (RO<small><sup>−</sup></small>)/keto (K) form, showcasing distinct spectral responses across various solvents with LOQ values in the range of 0.09–0.9%. The results were finally validated through Karl Fischer titration, showing similar outcomes.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 273-284"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc02651a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qilong Wang, Congya You, Qi Yan, Qingjuan Xie, Wenjie Deng, Ming Liu, Huiyu Li, Songlin Yu and Yongjun Feng
{"title":"Size-controllable fabrication of PbS quantum dots for NIR–SWIR photodetectors with extended wavelengths†","authors":"Qilong Wang, Congya You, Qi Yan, Qingjuan Xie, Wenjie Deng, Ming Liu, Huiyu Li, Songlin Yu and Yongjun Feng","doi":"10.1039/D4TC03229B","DOIUrl":"https://doi.org/10.1039/D4TC03229B","url":null,"abstract":"<p >A short-wave infrared (SWIR) photodetector requires robust performance and cost-effectiveness due to its utilization in military and civilian applications. Lead sulfide quantum dots (PbS QDs) have gained increasing attention in the field of near-infrared (NIR) detection owing to their heightened sensitivity and adjustable infrared absorption properties. Yet, it remains a great challenge to fabricate large-sized PbS QDs with the expansion of detection capabilities from NIR to SWIR regions. Here, a hot injection method was proposed to successfully synthesize large-sized PbS QDs with a diameter of 12.2 nm. The obtained PbS QDs in the 90s extended the detectable wavelengths to 2220 nm resulting from their large size. Subsequently, a photodetector device operating in the SWIR region was fabricated by employing PbS QDs as the photoactive layer. The specific detectivity of the device at ambient temperature reaches 4.0 × 10<small><sup>11</sup></small> Jones at 2100 nm, which shows promising applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19595-19602"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aysha A. Riaz, Curran Kalha, Maria Basso, Máté Füredi and Anna Regoutz
{"title":"The influence of stabiliser concentration on the formation of In2O3 thin films†","authors":"Aysha A. Riaz, Curran Kalha, Maria Basso, Máté Füredi and Anna Regoutz","doi":"10.1039/D4TC03116D","DOIUrl":"https://doi.org/10.1039/D4TC03116D","url":null,"abstract":"<p >In<small><sub>2</sub></small>O<small><sub>3</sub></small> is the parent oxide semiconductor for many transparent conducting oxides owing to its comparatively wide band gap and reasonable conductivity. The ability to fabricate thin films of In<small><sub>2</sub></small>O<small><sub>3</sub></small> utilising simple and cheap solution-processed methods has made it appealing for applications in displays and solar cells. However, to optimise and improve the optoelectronic properties of these films and enable scalability, understanding the fundamentals behind the solution chemistry is essential and often overlooked. Current research highlights the use of stabilisers to maintain the solution over time and facilitate the formation of strong M–O–M bonds but rarely delves into the underlying chemistry or discusses the effect of varying the stabiliser concentration. This paper explores the impact on the quality of In<small><sub>2</sub></small>O<small><sub>3</sub></small> thin films when altering the concentration of monoethanolamine used as a stabiliser. UV-visible and infrared spectroscopy are employed to track changes to the solution over time to explore the role of the stabiliser. In parallel, thin films prepared from solutions at different time points were characterised using X-ray photoelectron spectroscopy, atomic force microscopy, and ellipsometry. Through this approach, changes in the solution can be directly correlated to thin-film characteristics, crucial for their use in electronic applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 177-184"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc03116d?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Merve Karakaya, İrem Gürbüz, Lovro Fulanović and Umut Adem
{"title":"Stabilization of the first-order phase transition character and enhancement of the electrocaloric effect by Na0.5Bi0.5TiO3 substitution in BaTiO3 ceramics†","authors":"Merve Karakaya, İrem Gürbüz, Lovro Fulanović and Umut Adem","doi":"10.1039/D4TC01735H","DOIUrl":"https://doi.org/10.1039/D4TC01735H","url":null,"abstract":"<p >The electrocaloric properties of BaTiO<small><sub>3</sub></small>-based Pb-free ferroelectric materials are widely investigated. One approach to achieving a large electrocaloric response is making use of the substantial polarization change associated with the first-order phase transition at the Curie temperature. To make use of this approach, we have investigated the electrocaloric response of (1 − <em>x</em>)BaTiO<small><sub>3</sub></small>–<em>x</em>Na<small><sub>0.5</sub></small>Bi<small><sub>0.5</sub></small>TiO<small><sub>3</sub></small> (BT–NBT) ceramics for <em>x</em> = 0.05, 0.10, 0.20 and 0.30. For this BT-rich part of the solid solution, it is established that increasing the NBT content increases the tetragonality of the BaTiO<small><sub>3</sub></small>. We show that this increase in tetragonality with NBT substitution helps to maintain the first-order nature of the phase transition in BaTiO<small><sub>3</sub></small> and correspondingly a large electrocaloric response, despite the simultaneous enhancement of relaxor ferroelectric character with the NBT substitution. A significantly larger effective electrocaloric temperature change (Δ<em>T</em><small><sub>eff</sub></small>) of 1.65 K was obtained for the <em>x</em> = 0.20 sample under 40 kV cm<small><sup>−1</sup></small>, using the direct measurement of the electrocaloric effect, which is in reasonable agreement with the indirect measurements.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19612-19619"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tsutomu Ishi-i, Misuzu Nakaya, Tomoya Umeki, Taisuke Matsumoto, Jun Hyeon Lee and Takuma Yasuda
{"title":"Enhanced near-infrared phosphorescence found in a structurally similar host–guest system†","authors":"Tsutomu Ishi-i, Misuzu Nakaya, Tomoya Umeki, Taisuke Matsumoto, Jun Hyeon Lee and Takuma Yasuda","doi":"10.1039/D4TC03441D","DOIUrl":"https://doi.org/10.1039/D4TC03441D","url":null,"abstract":"<p >Longer-wavelength phosphorescence in the near-infrared (NIR) region has attracted attention in the field of biological application. Compared to widely studied shorter-wavelength green and yellow phosphorescence, achieving NIR phosphorescence is difficult because of a lack of versatile strategies using a phosphorescent platform. An NIR emission near 720 nm was observed for the benzoselenodiazole dye BSeD(OMe)–Br bearing bromine atoms and methoxy groups; nevertheless, its phosphorescence efficiency is weak. The NIR phosphorescence emission increased significantly when a trace amount of BSeD(OMe)–Br was incorporated into the one-dimensional aggregate structure composed of the corresponding benzothiadiazole dye BTD(OMe)–Br. In this host–guest BTD(OMe)–Br/BSeD(OMe)–Br system, an effective Dexter-type energy transfer with 92% efficiency occurs from the excited triplet state of the host BTD(OMe)–Br molecule to the excited triplet state of the guest BSeD(OMe)–Br molecule. In the 100 : 0.5 host–guest system, the phosphorescence intensity was enhanced by a factor of 200. The enhanced NIR phosphorescence through efficient energy transfer is attributed to a highly ordered host–guest aggregate structure arising from the same crystal packing pattern of the structurally similar host and guest molecules.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19404-19411"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kabir S. Suraj, Hossein Asnaashari Eivari, Gen Tatara and M. Hussein N. Assadi
{"title":"Tripling magnetite's thermoelectric figure of merit with rare earth doping†","authors":"Kabir S. Suraj, Hossein Asnaashari Eivari, Gen Tatara and M. Hussein N. Assadi","doi":"10.1039/D4TC03153A","DOIUrl":"https://doi.org/10.1039/D4TC03153A","url":null,"abstract":"<p >Using density functional theory (DFT) and machine-learning force fields, we calculated the thermoelectric properties of magnetite doped with four rare-earth elements: lanthanum, cerium, praseodymium, and neodymium. Our results show that Fe<small><sub>3</sub></small>O<small><sub>4</sub></small>:Nd<small><sup>3+</sup></small> exhibits the highest power factor (PF) of 6294 μW m<small><sup>−1</sup></small> K<small><sup>−2</sup></small> at 300 K when hole-doped at a concentration of 10<small><sup>21</sup></small> cm<small><sup>−3</sup></small>. This remarkably high PF surpasses those reported in the literature for binary oxides and is a significant improvement upon the PF of pristine Fe<small><sub>3</sub></small>O<small><sub>4</sub></small>, which was calculated to be less than 4600 μW m<small><sup>−1</sup></small> K<small><sup>−2</sup></small> over a temperature range between 300 K and 900 K. More importantly, we predict a maximum thermoelectric figure of merit (<em>ZT</em>) of 0.76 at 800 K for Fe<small><sub>3</sub></small>O<small><sub>4</sub></small>:Nd<small><sup>3+</sup></small>, nearly triple the <em>ZT</em> of pristine Fe<small><sub>3</sub></small>O<small><sub>4</sub></small> at the same temperature, with a 191.2% improvement. Our calculations offer a theoretical analysis of realistic expectations for thermoelectric enhancement by heavy but isovalent dopants in magnetic oxides, as Nd adopts a +3 oxidation state, being isovalent to the Fe it replaces, and is about three times heavier than Fe.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19212-19218"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142778007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yueteng Zhang, Xue Bai, Heping Zhao, Jianbei Qiu, Zhiguo Song, Jiayan Liao and Zhengwen Yang
{"title":"X-ray-irradiation-induced photoluminescence and photochromic LiNbO3 phosphors for anti-counterfeiting and X-ray imaging†","authors":"Yueteng Zhang, Xue Bai, Heping Zhao, Jianbei Qiu, Zhiguo Song, Jiayan Liao and Zhengwen Yang","doi":"10.1039/D4TC03606A","DOIUrl":"https://doi.org/10.1039/D4TC03606A","url":null,"abstract":"<p >This study explored the innovative photochromic and photoluminescence properties of Eu<small><sup>3+</sup></small>-doped LiNbO<small><sub>3</sub></small> phosphors under X-ray irradiation, demonstrating their great potential for anti-counterfeiting, X-ray detection and imaging. The photochromic phosphor LiNbO<small><sub>3</sub></small>:Eu<small><sup>3+</sup></small> is synthesized, which undergoes a color change from white to brown under bright field conditions and displays red photoluminescence under dark field conditions after X-ray exposure due to defect formation. The addition of Eu<small><sup>3+</sup></small> enhanced the photochromic reaction and rapid self-bleaching ability. The study delved into the mechanisms of photochromic and photoluminescence behavior, focusing on electron–hole pair separation and defect formation, which are central to the observed phenomena. In addition, the integration of these phosphors into polydimethylsiloxane can create multifunctional anti-counterfeiting labels and can also be used for “dual-mode” 3D X-ray imaging and detection, showing practical application potential.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 203-213"},"PeriodicalIF":5.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jinyang Li, Wenye Deng, Yan Xue, Ni Ai, Kai Ding, Xianghui Chen, Weiwei Meng, Pengjun Zhao, Aimin Chang and Yongxin Xie
{"title":"Ba7Nb4−xCexMoO20: structural and electrical property studies of a novel NTC thermal ceramic","authors":"Jinyang Li, Wenye Deng, Yan Xue, Ni Ai, Kai Ding, Xianghui Chen, Weiwei Meng, Pengjun Zhao, Aimin Chang and Yongxin Xie","doi":"10.1039/D4TC03449J","DOIUrl":"https://doi.org/10.1039/D4TC03449J","url":null,"abstract":"<p >The hexagonal perovskite oxide Ba<small><sub>7</sub></small>Nb<small><sub>4</sub></small>MoO<small><sub>20</sub></small> is widely studied in chemical devices due to its oxide-ionic conductivity at high temperatures. Ce<small><sup>4+</sup></small> doping into Ba<small><sub>7</sub></small>Nb<small><sub>4</sub></small>MoO<small><sub>20</sub></small> was undertaken to optimize small polariton conduction and oxide ionic conductivity simultaneously. Ba<small><sub>7</sub></small>Nb<small><sub>4−<em>x</em></sub></small>Ce<small><sub><em>x</em></sub></small>MoO<small><sub>20</sub></small> materials were synthesized <em>via</em> solid phase sintering. XRD patterns indicate a single phase, SEM scans reveal increased densification with higher Ce doping concentrations, and the resistance temperature range expands from 400–900 °C to 300–1100 °C. Hall tests confirm that Ba<small><sub>7</sub></small>Nb<small><sub>4−<em>x</em></sub></small>Ce<small><sub><em>x</em></sub></small>MoO<small><sub>20</sub></small> carriers are electrons, indicating n-type conductivity. Nyquist plots illustrate that grain boundary resistance governs complex impedance, which shows gradual oxide ionic conductivity enhancement with rising temperature. The aging drift rate decreases to about 1%, suggesting good stability of Ba<small><sub>7</sub></small>Nb<small><sub>4−<em>x</em></sub></small>Ce<small><sub><em>x</em></sub></small>MoO<small><sub>20</sub></small> ceramics. These findings propose a feasible doping strategy for enhancing hexagonal perovskite oxide ceramics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18819-18828"},"PeriodicalIF":5.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia Li, Jianke Tian, Hengbo Liu, Yan Li, Linyang Li, Jun Li, Guodong Liu and Junjie Shi
{"title":"Piezoelectric polarizations and valley-related multiple Hall effects in TiAlX3 monolayers (X = Se, Te)†","authors":"Jia Li, Jianke Tian, Hengbo Liu, Yan Li, Linyang Li, Jun Li, Guodong Liu and Junjie Shi","doi":"10.1039/D4TC03559C","DOIUrl":"https://doi.org/10.1039/D4TC03559C","url":null,"abstract":"<p >Valleytronics, spintronics and piezotronics are emerging fields that aim to manipulate the valley, spin and charge degrees of freedom to control related transport properties in condensed matter. Here, we predict that TiAlX<small><sub>3</sub></small> (X = Se, Te) are multifunctional ferromagnetic semiconductors with large valley polarization up to 179.7 meV and a large in-plane piezoelectric response up to −66.02 pm V<small><sup>−1</sup></small>. Strain-induced topological phase transitions and the quantum anomalous valley Hall effect (QAVHE) can be found in TiAlSe<small><sub>3</sub></small>, where 100% valley- and spin-polarization can be generated by half-valley metallic (HVM) states. Combining the sequent band inversions of the d<small><sub><em>x</em><small><sup>2</sup></small>−<em>y</em><small><sup>2</sup></small></sub></small>/d<small><sub><em>xy</em></sub></small> and d<small><sub><em>z</em><small><sup>2</sup></small></sub></small> orbitals at K and K′ valleys with a two-band strained <em>k</em>·<em>p</em> model, the physical mechanism in topological phase transitions is illuminated. Finally, based on the coexistence of the anomalous valley Hall effect (AVHE) and piezoelectric transport in ferrovalley systems, we propose the piezoelectric-AVHE (PAVHE) in which the carriers from the polarized-valleys are driven by the intrinsic polarized electric field established by the piezoelectric response. Our work enriches the valley-related multiple Hall effect and stimulates further experimental works related to the valley physics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19660-19670"},"PeriodicalIF":5.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Bruevich, Y. Patel, J. P. Singer and V. Podzorov
{"title":"Significant Joule self-heating pervasive in the emergent thin-film transistor studies†","authors":"V. Bruevich, Y. Patel, J. P. Singer and V. Podzorov","doi":"10.1039/D4TC02612H","DOIUrl":"https://doi.org/10.1039/D4TC02612H","url":null,"abstract":"<p >In this Perspective, recent literature on field-effect transistors based on emergent semiconducting materials, including metal-halide perovskites, conjugated polymers, and small-molecule organic semiconductors, is analyzed in terms of electric power and power density reached in transistors’ channel during their measurements. We used an <em>in situ</em> IR imaging to directly obtain the surface temperature distribution of biased devices under the experimental conditions commonly used in the literature. It is shown that at such conditions, the semiconducting channel would be resistively self-heated to significant temperatures, easily in excess of 150 °C. This implies a non-equilibrium device operation, possible materials’ degradation, parameter drift, and, in the best-case scenario, a non-room-temperature mobility extracted from such measurements. We show that this problem is rather common in various subfields represented in the literature, indicating that paying attention to the biasing conditions in transistor research and monitoring the local temperature of the semiconducting channel are necessary.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 44","pages":" 17802-17806"},"PeriodicalIF":5.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc02612h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}