Journal of Materials Chemistry C最新文献_第9页

Study on the time-resolved detection performance of β-Ga2O3-based SBUV photodetectors: surface chemical analysis and the impacts of non-VO factors† β- ga2o3基SBUV光电探测器的时间分辨检测性能研究：表面化学分析及非vo因素的影响

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-08 DOI: 10.1039/D4TC03701D

Zeming Li, Rensheng Shen, Wancheng Li, Teng Jiao, Yuchun Chang, Hongwei Liang, Xiaochuan Xia and Baolin Zhang

{"title":"Study on the time-resolved detection performance of β-Ga2O3-based SBUV photodetectors: surface chemical analysis and the impacts of non-VO factors†","authors":"Zeming Li, Rensheng Shen, Wancheng Li, Teng Jiao, Yuchun Chang, Hongwei Liang, Xiaochuan Xia and Baolin Zhang","doi":"10.1039/D4TC03701D","DOIUrl":"https://doi.org/10.1039/D4TC03701D","url":null,"abstract":"The time-resolved detection performance of β-gallium oxide (β-Ga2O3)-based solar-blind ultraviolet (SBUV) photodetectors (PDs) are garnering extensive research attention. Generally, variations in the response and recovery rates of β-Ga2O3-based PDs have been attributed to oxygen vacancies (VO), typically analyzed through X-ray photoelectron spectroscopy (XPS) O 1s spectra. However, in this study, we fabricated SBUV PDs with β-Ga2O3 films grown via metal–organic chemical vapor deposition (MOCVD). The surface chemical analysis of the obtained films reveals that the XPS O 1s spectra are unaffected by VO. Additionally, by correlating film properties with PD performance, we demonstrate the significant role of non-VO factors in shaping the time-resolved detection performance of these devices.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 491-499"},"PeriodicalIF":5.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light-induced magnetic switching in a coumarin-based Tb single molecule magnet† 基于香豆素的Tb单分子磁体的光诱导磁开关

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-08 DOI: 10.1039/D4TC03152K

Elena Bartolomé, Ana Arauzo, Javier Luzón and Laura Gasque

{"title":"Light-induced magnetic switching in a coumarin-based Tb single molecule magnet†","authors":"Elena Bartolomé, Ana Arauzo, Javier Luzón and Laura Gasque","doi":"10.1039/D4TC03152K","DOIUrl":"https://doi.org/10.1039/D4TC03152K","url":null,"abstract":"We present the intriguing magneto-optical properties of the lanthanide complex [Tb(coum)3(batho)]·[0.7EtOH], named Tb–batho, based on coum = 3-acetyl-4-hydroxylato-coumarin and batho = bathophenanthroline ligands. Tb–batho displays visible-range luminescence with a notable quantum yield (58%) upon sensitization of the “antenna” ligands. Employing a SQUID magnetometer equipped with a magneto-optic option, we conducted comprehensive in situ measurements of light-induced magnetization changes across varied magnetic fields, temperatures, and frequencies, utilizing light wavelengths ranging from 275 to 800 nm. A reversible magnetic modulation of magnetization is observed upon toggling the light “on” and “off,” particularly pronounced at 380 nm excitation, resulting in a magnetization change ΔM(off/on) = 0.376μB fu−1 (ca. 42.6% of the magnetization) at 1.8 K and 1 kOe. Although Tb–batho exhibits field-induced single ion magnet (SIM) behavior, characterized by a thermally-activated process with an activation energy of Ueff/kB = 16.6 K @ 3 kOe and a slow direct process influenced by bottleneck effects, light irradiation does not noticeably alter its dynamic properties. All in all, Tb–batho emerges as a versatile multifunctional molecular material integrating SIM behavior, luminescence and light-induced magnetic switching, holding interest for diverse electronic applications, sensors, or quantum computing.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 2","pages":" 831-841"},"PeriodicalIF":5.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc03152k?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unravelling the structure–luminescence relationship in two dimensional antimony(iii)-doped cadmium(ii) halide hybrids† 二维锑（iii）掺杂镉（ii）卤化物杂化体中结构-发光关系的揭示

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-08 DOI: 10.1039/D4TC03543G

Ashwath Kudlu, Dhritismita Sarma, Deep Kumar Das, Alisha Basheer Shamla, Rangarajan Bakthavatsalam, Venkatesha R. Hathwar, Arup Mahata and Janardan Kundu

{"title":"Unravelling the structure–luminescence relationship in two dimensional antimony(iii)-doped cadmium(ii) halide hybrids†","authors":"Ashwath Kudlu, Dhritismita Sarma, Deep Kumar Das, Alisha Basheer Shamla, Rangarajan Bakthavatsalam, Venkatesha R. Hathwar, Arup Mahata and Janardan Kundu","doi":"10.1039/D4TC03543G","DOIUrl":"https://doi.org/10.1039/D4TC03543G","url":null,"abstract":"Luminescent zero dimensional (0D) antimony halide (Sb–X) hybrids showcase emissive properties (emission peak position; photoluminescence quantum yield – PLQY) that are strongly dependent on the local metal halide geometry/site asymmetry. However, controlling the local metal halide geometry has been synthetically challenging due to the diverse coordination geometries adopted by the Sb–X units. Consequently, efforts ascertaining a clear structure–luminescence relation in 0D Sb–X hybrids have met with limited success. Reported here is an attempt to draw a structure–luminescence relationship by controlling the Sb–X geometry utilizing 2D cadmium halide hybrids as the host that serves as a framework for incorporating emissive Sb3+ dopants. The choice of a series of organic cations tunes the local metal halide geometry/distortion in the host hybrids that controllably alters the luminescent properties of the emissive dopants in 2D Sb3+ doped hybrids. A clear structure–luminescence relationship is observed: red-shifted emission peak positions and enhanced PLQYs as the extent of the local metal halide distortion increases. DFT calculations of the doped compounds, characterizing ground and excited state structural and electronic properties, reveal the operative luminescence mechanism and the origin of different efficiency of luminescence (PLQY). This work provides deeper insight into the luminescence mechanism highlighting the importance of ground and excited state structural distortions in Sb3+ doped 2D cadmium halide hybrids. The experimental–computational insights gained here are beneficial for establishing the structure–luminescence relationship for 0D Sb halide hybrids targeting their rational synthesis.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 2","pages":" 808-820"},"PeriodicalIF":5.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc03543g?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design, synthesis, and optoelectronic properties of benzothiadiazole-fused sulfur and nitrogen-containing polycyclic heteroaromatics† 苯并噻唑-含硫和含氮多环杂芳烃的设计、合成和光电性能研究

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-08 DOI: 10.1039/D4TC04250F

Yuxin Yin, Rui Shi, Zhongwei Liu, Yanru Li, Ting Jiang, Lingxu Zhao, Jie Li, Deyang Ji, Liqiang Li and Zhuping Fei

{"title":"Design, synthesis, and optoelectronic properties of benzothiadiazole-fused sulfur and nitrogen-containing polycyclic heteroaromatics†","authors":"Yuxin Yin, Rui Shi, Zhongwei Liu, Yanru Li, Ting Jiang, Lingxu Zhao, Jie Li, Deyang Ji, Liqiang Li and Zhuping Fei","doi":"10.1039/D4TC04250F","DOIUrl":"https://doi.org/10.1039/D4TC04250F","url":null,"abstract":"The optoelectronic properties of sulfur and nitrogen-containing polycyclic heteroaromatics are still understudied and structure–property relationships are not well understood as compared to acenes and sulfur-heterocyclic aromatic hydrocarbons; this is primarily due to the limited variety of polycyclic structures available. By fusing the rigid, electron-deficient benzothiadiazole into the linear polycyclic heterocyclic skeleton, a series of novel sulfur–nitrogen polycyclic heteroaromatic compounds, designated as BzPTT-Cn, containing different alkyl side chains with benzothiadiazole at both ends have been designed and synthesized. It is found that the introduction of benzothiadiazole exerts an important effect on the physicochemical properties of the molecules due to the intramolecular charge transfer effect. Moreover, by regulating the alkyl group on the N-site of the pyrrole ring in BzPTT, we were able to efficiently adjust the molecular stacking, physicochemical properties, and morphology, which, in turn, influenced the optoelectronic properties. Among the BzPTT-Cn series, BzPTT-C4C8-based organic field-effect transistor (OFETs) devices exhibited the highest hole mobility (up to 0.24 cm2 V−1 s−1) and the best photo-detection characteristics with photosensitivity (P) and specific detectivity (D*) up to 105 and 1011 Jones, respectively, which is scarcely reported for donor–acceptor structured polycyclic aromatics. In addition, distinctive single excitatory postsynaptic current (EPSC) behaviors were also observed for BzPTTC4C8-based phototransistors, suggesting potential applications in bionic artificial synapses. This work has implications for further design of sulfur–nitrogen-containing donor–acceptor structured polycyclic heterocyclic aromatics.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 3","pages":" 1281-1291"},"PeriodicalIF":5.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic bio-inspired photocatalytic hydrogen production by chlorophyll derivative sensitized Nb2CTx MXene nanosheets† 叶绿素衍生物敏化Nb2CTx MXene纳米片的协同生物启发光催化制氢

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC04074K

Tianfang Zheng, Lin Yang, Hai Xu, Aijun Li, Shin-ichi Sasaki and Xiao-Feng Wang

{"title":"Synergistic bio-inspired photocatalytic hydrogen production by chlorophyll derivative sensitized Nb2CTx MXene nanosheets†","authors":"Tianfang Zheng, Lin Yang, Hai Xu, Aijun Li, Shin-ichi Sasaki and Xiao-Feng Wang","doi":"10.1039/D4TC04074K","DOIUrl":"https://doi.org/10.1039/D4TC04074K","url":null,"abstract":"The pursuit of sustainable energy sources has become imperative in light of the environmental and strategic challenges posed by fossil fuel dependency. This study presents a novel approach to photocatalytic hydrogen production using a composite system comprising chlorophyll derivative (Chl) and monolayer Nb2CTx MXene nanosheets. Through a series of experimental and theoretical investigations, we elucidate the intricate interplay between Chl and MXene in driving efficient hydrogen production under visible light irradiation. Our results demonstrate the superior photocatalytic performance of the Chl@Nb2CTx composite, attributed to the enhanced charge transfer facilitated by MXene and the wide-range light absorption of Chl. Corresponding electrochemical and photochemical experiments further unveil the underlying reaction mechanism, emphasizing the role of Chl as a photocatalyst and MXene as a co-catalyst. This synergistic combination offers a promising avenue for sustainable hydrogen production, free from the limitations of precious metal catalysts and fossil fuel dependence.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 2","pages":" 802-807"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Facile synthesis of silicon quantum dots with photoluminescence in the near-ultraviolet to violet region via wet oxidation† 湿氧化法制备近紫外光致发光硅量子点

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC02095B

Yizhou He, Qianxi Hao, Chi Zhang, Qi Wang, Wenxin Zeng, Jiamin Yu, Xue Yang, Shaorong Li, Xiaowei Guo and Serguei K. Lazarouk

{"title":"Facile synthesis of silicon quantum dots with photoluminescence in the near-ultraviolet to violet region via wet oxidation†","authors":"Yizhou He, Qianxi Hao, Chi Zhang, Qi Wang, Wenxin Zeng, Jiamin Yu, Xue Yang, Shaorong Li, Xiaowei Guo and Serguei K. Lazarouk","doi":"10.1039/D4TC02095B","DOIUrl":"https://doi.org/10.1039/D4TC02095B","url":null,"abstract":"To extend the photoluminescence (PL) of silicon quantum dots (SiQDs) into the near-ultraviolet–violet (NUVV) region, the size of SiQDs must be reduced to less than 1.53 nm. However, this significantly increases both the difficulty and the cost of synthesis. Herein, we report a facile wet oxidation treatment to obtain SiQDs with PL emission in the NUVV region while elucidating their emission mechanism. The synthesized SiQDs exhibit an average diameter of 4.95 nm, with F-band emission peaks ranging from 332 to 420 nm, which are blue-shifted by approximately 500 nm compared to the near-infrared (NIR) counterparts lacking wet oxidation treatment. Notably, the synthesized SiQDs achieve an average photoluminescence quantum yield (PLQY) of 19.05%, a 6.24-fold increase over their NIR counterparts. Comprehensive examinations attribute this NUVV emission to two types of oxygen defects: peroxy linkage (POL) and oxygen-deficient center (ODC(I)). Under wet oxidation conditions, SiOx networks containing these oxygen defects, rather than simple Si–O–Si groups, are formed on the surface of SiQDs. Furthermore, after storing the SiQDs in ambient air for approximately two months, no intrinsic or additional defect-induced emissions were observed, and 88% of the initial PLQY was retained, indicating favorable stability of the SiQDs. This study provides valuable insights into oxygen-related defect-induced emission mechanisms on SiQD surfaces.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 3","pages":" 1228-1242"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shear-structured piezoelectric accelerometers based on KNN lead-free ceramics for vibration monitoring† 基于 KNN 无铅陶瓷的剪切结构压电加速度计用于振动监测†。

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC04292A

Yi Ding, Yu Wang, Wenbin Liu, Yongqi Pan, Ping Yang, Dechao Meng, Ting Zheng and Jiagang Wu

{"title":"Shear-structured piezoelectric accelerometers based on KNN lead-free ceramics for vibration monitoring†","authors":"Yi Ding, Yu Wang, Wenbin Liu, Yongqi Pan, Ping Yang, Dechao Meng, Ting Zheng and Jiagang Wu","doi":"10.1039/D4TC04292A","DOIUrl":"https://doi.org/10.1039/D4TC04292A","url":null,"abstract":"The process of promoting the transition of piezoelectric devices to lead-free requires consideration from multiple dimensions, including materials, devices and processes. In the key field of vibration monitoring, there has been a notable lack of attention paid to the shear mode of lead-free piezoelectric ceramics, leaving a gap in research on shear-mode accelerometers utilizing lead-free perovskite-structured ceramics. In this study, potassium sodium niobate (KNN)-based benign piezoelectric ceramics were synthesized and their complete set of material constants were characterized. Leveraging the higher shear piezoelectric coefficient of the ceramics, an annular shear-structured piezoelectric accelerometer based on KNN ceramics was successfully fabricated for the first time. Simulation and experiment verified that the shear-structured sensor exhibits good charge sensitivity (Sq = 9.49 pC g−1), low nonlinearity (<1%) within a range of 0.5–20 g, and stability in both sensitivity and phase angle with fluctuations within ±5% across a frequency range of 20 Hz to 3000 Hz. In addition, we propose that using the effective piezoelectric coefficient (dij (eff)) is an important guiding significance for evaluating the practical application performance of piezoelectric materials. This research will promote the practical application of lead-free piezoelectric ceramics in the field of vibration monitoring.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18639-18650"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emergence of heavy-fermion behavior and distorted square nets in partially vacancy-ordered Y4FexGe8 (1.0 ≤ x ≤ 1.5)† 部分空位有序Y4FexGe8（1.0≤x≤1.5）†中重费米子行为和畸变方网的出现

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC03601H

Hengdi Zhao, Xiuquan Zhou, Mohammad Usman, Ramakanta Chapai, Lei Yu, Jianguo Wen, Hyowon Park, Alexios P. Douvalis, Patricia E. Meza, Yu-Sheng Chen, Ulrich Welp, Stephan Rosenkranz, Duck Young Chung and Mercouri G. Kanatzidis

{"title":"Emergence of heavy-fermion behavior and distorted square nets in partially vacancy-ordered Y4FexGe8 (1.0 ≤ x ≤ 1.5)†","authors":"Hengdi Zhao, Xiuquan Zhou, Mohammad Usman, Ramakanta Chapai, Lei Yu, Jianguo Wen, Hyowon Park, Alexios P. Douvalis, Patricia E. Meza, Yu-Sheng Chen, Ulrich Welp, Stephan Rosenkranz, Duck Young Chung and Mercouri G. Kanatzidis","doi":"10.1039/D4TC03601H","DOIUrl":"https://doi.org/10.1039/D4TC03601H","url":null,"abstract":"Disorders in intermetallic systems belonging to the CeNiSi2-family are frequently overlooked. Even compounds presumed to be stoichiometric, such as YFeGe2, can be misidentified. Here, we report a series of Y4FexGe8 (1.0 ≤ x ≤ 1.5) compounds and show, using high-resolution synchrotron X-ray diffraction, that they feature asymmetrical structural distortions in the Fe and Ge sites that lead to a superstructure with partially ordered Fe vacancies and distorted Ge square-net in the triclinic crystal system, space group P<img> with a = 11.4441(3) Å, b = 32.7356(7) Å, c = 11.4456(3) Å, α = 79.6330(10)°, β = 88.3300(10)°, and γ = 79.6350 (10)°. The unit cell is 16 times the conventional orthorhombic cell with the space group Cmcm. We identified the lower and upper limits for Fe in Y4FexGe8 (1.0 ≤ x ≤ 1.5). Our physical property measurements yielded a Sommerfeld coefficient γ = 39.8 mJ mole−1 K−2, a Kadowaki–Woods ratio of 1.2 × 10−5 μΩ cm mole2 K2 mJ−2, and a Wilson ratio of 1.83, suggesting heavy fermion behavior in the absence of f electrons, a rather rare case. Furthermore, we observed strong spin frustration and noted findings indicating possible superconductivity associated with the Fe content.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 103-115"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a self-powered 2D Te/PtSe2 heterojunction for room-temperature NIR detection† 用于室温近红外探测的自供电2D Te/PtSe2异质结设计

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC04034A

Fengtian Xia, Dongbo Wang, Wen He, Xiangqun Chen, Chenchen Zhao, Bingke Zhang, Donghao Liu, Sihang Liu, Jingwen Pan, Shujie Jiao, Dan Fang, Xuan Fang, Lihua Liu and Liancheng Zhao

{"title":"Design of a self-powered 2D Te/PtSe2 heterojunction for room-temperature NIR detection†","authors":"Fengtian Xia, Dongbo Wang, Wen He, Xiangqun Chen, Chenchen Zhao, Bingke Zhang, Donghao Liu, Sihang Liu, Jingwen Pan, Shujie Jiao, Dan Fang, Xuan Fang, Lihua Liu and Liancheng Zhao","doi":"10.1039/D4TC04034A","DOIUrl":"https://doi.org/10.1039/D4TC04034A","url":null,"abstract":"The advent of two-dimensional (2D) materials with exceptional properties has opened avenues for the development of high-performance infrared (IR) detectors through innovative approaches. Nevertheless, the intricate preparation procedures have constrained the deployment of 2D materials in IR detection applications due to their complex fabrication processes, sharply raised contact resistances, and severe interfacial recombination of 2D materials. In this study, we present a novel magnetron sputtering method for the preparation of 2D Te films, which are then combined with PtSe2 films to form heterojunction devices with high performance due to the good interfacial contacts that reduces interface recombination. By modulating the growth temperature, we obtained Te films grown at the optimal growth temperature of 200 °C, which exhibited a uniform nanorod structure and high crystal quality with a narrow band gap of 0.4 eV and good light absorption in the IR region. The built-in electric field formed at the heterojunction interface can effectively separate the photogenerated carriers, thereby enhancing the device's optoelectronic performance and allowing operation at zero bias, which reduces the impact of dark current on the device. Under the light illumination of 850 nm at zero bias, the device exhibits a maximum responsivity of 10.9 mA W−1, specific detectivity of 9.3 × 1011 Jones, EQE of 1.6%, and Ilight/Idark ratio of 9.6 × 104.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 2","pages":" 680-690"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition 原子层沉积法制备高迁移率铟镓锌氧化物薄膜晶体管的电荷输运特性

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2024-11-07 DOI: 10.1039/D4TC03560G

Sang-Joon Park, Se-Ryong Park, Jong Mu Na, Woo-Seok Jeon, Youngjin Kang, Sukhun Ham, Yong-Hoon Kim, Yung-Bin Chung and Tae-Jun Ha

{"title":"Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition","authors":"Sang-Joon Park, Se-Ryong Park, Jong Mu Na, Woo-Seok Jeon, Youngjin Kang, Sukhun Ham, Yong-Hoon Kim, Yung-Bin Chung and Tae-Jun Ha","doi":"10.1039/D4TC03560G","DOIUrl":"https://doi.org/10.1039/D4TC03560G","url":null,"abstract":"Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium–gallium–zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm2 V−1 s−1, on/off ratio of 3.8 × 108, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec−1. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol–gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s−1, respectively) compared with those of the sol–gel-based IGZO TFT (65 meV and 2000 cm s−1) and sputter-based IGZO TFT (37 meV and 4000 cm s−1), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19071-19077"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0