Journal of Materials Chemistry C最新文献_第2页

Research progress on the application of surfactants in superior electromagnetic wave absorbers

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-02-05 DOI: 10.1039/D4TC05047A

Zhengtang Su, Chao Chen, Yuhang Long, Gang Chen, Wei Cai, Rongli Gao and Fei Chen

引用次数: 0

The binding details of a 2-(methylthio)thiophene/furan anchor anchored to the Au electrode in the formed molecular junction†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-02-05 DOI: 10.1039/D4TC04897K

Mengxiao Li, Aoxing Sun, Mingzhen Wang, Xu Wang, Yuhua Lu, Lei Yu and Yunchuan Li

引用次数: 0

III–V semiconductor wires for optical switches in solid-state lasers

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-02-04 DOI: 10.1039/D4TC04975F

Linlu Qiu, Yifan Zhao, Jieyu Jiang, Fei Lou, Shuaiyi Zhang, He Yang, Baitao Zhang, Xia Wang and Jingliang He

{"title":"III–V semiconductor wires for optical switches in solid-state lasers","authors":"Linlu Qiu, Yifan Zhao, Jieyu Jiang, Fei Lou, Shuaiyi Zhang, He Yang, Baitao Zhang, Xia Wang and Jingliang He","doi":"10.1039/D4TC04975F","DOIUrl":"https://doi.org/10.1039/D4TC04975F","url":null,"abstract":"Micro-/nano-materials have remarkably attracted research attention over the past two decades due to their unique structure-dependent optoelectronic properties. Particularly, semiconductor wires (SWs) have become fundamental materials for photonic devices owing to their inherent confinement effects as linear structures. Their electrical and optical properties can be altered by controlling their diameter, strain and composition, providing a unique platform for studying light generation, amplification, propagation, detection and modulation. This work reviews recent developments of III–V SWs as optical switches in bulk laser applications. The structural characteristics of III–V SWs for optical switch applications are introduced, followed by a discussion on the nonlinear optical properties of various SWs and their applications in solid-state lasers (SSLs). The influence of strain and diameter on the properties of SWs is summarized, along with the effects of morphology on the thermal conductivity of these wires. Finally, the challenges that lie ahead in this field are presented. Future research efforts are needed to further optimise the growth techniques of SWs, achieving precise control over their size and composition to tune their optoelectronic performance. Additionally, systematic studies on the strain effects and structural defects in SWs of different diameters will help maximise their performance in practical applications.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 8","pages":" 3669-3688"},"PeriodicalIF":5.7,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-02-03 DOI: 10.1039/D4TC04792C

Joo Hee Jeong, Jeong Eun Oh, Dongseon Kim, Daewon Ha and Jae Kyeong Jeong

{"title":"Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices","authors":"Joo Hee Jeong, Jeong Eun Oh, Dongseon Kim, Daewon Ha and Jae Kyeong Jeong","doi":"10.1039/D4TC04792C","DOIUrl":"https://doi.org/10.1039/D4TC04792C","url":null,"abstract":"With conventional silicon-based devices approaching their physical scaling limits, alternative channel materials, such as transition metal dichalcogenides and oxide semiconductors (OSs), have emerged as promising candidates for extending Moore's law and advancing performance, power efficiency, area scaling, and cost-effectiveness. Among these, OSs stand out as particularly promising, having already been established as the industry standard for high-end active-matrix organic light-emitting diodes due to their moderate mobility, extremely low off-current, steep subthreshold swing, excellent uniformity, and compatibility with low-temperature fabrication processes. However, to enable the deployment of OSs in more demanding applications, such as 3D dynamic random-access memory and other advanced electronic systems, further improvements are necessary, particularly in terms of enhancing on-current and hydrogen stability and reducing contact resistance (RC). In this work, we review strategies to optimize electrical contact properties to improve the device performance of OSs and examine the underlying mechanism of RC from a device physics perspective.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 10","pages":" 4861-4875"},"PeriodicalIF":5.7,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc04792c?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advances in metal oxide semiconductor gas sensor arrays based on machine learning algorithms

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-02-03 DOI: 10.1039/D4TC05220J

Jiayue Han, Huizi Li, Jiangong Cheng, Xiang Ma and Yanyan Fu

{"title":"Advances in metal oxide semiconductor gas sensor arrays based on machine learning algorithms","authors":"Jiayue Han, Huizi Li, Jiangong Cheng, Xiang Ma and Yanyan Fu","doi":"10.1039/D4TC05220J","DOIUrl":"https://doi.org/10.1039/D4TC05220J","url":null,"abstract":"Metal oxide semiconductor (MOS) gas sensors have garnered significant attention for their excellent sensitivity and rapid response times. However, distinguishing similar gases in complex environments remains a major challenge. Integrating sensor arrays with machine learning algorithms significantly enhances gas recognition and detection accuracy, making it a key approach for intelligent gas monitoring. This review summarizes recent advances in MOS gas sensor arrays driven by machine learning algorithms. It further explores the mechanisms of MOS/MOS sensor arrays, conventional sensing materials and machine learning algorithms suitable for gas sensor arrays. Additionally, this review reports, summarizes, and evaluates both classical gas sensing algorithms and neural network-based algorithms for gas identification, considering aspects such as operating principles, advantages and disadvantages, and practical applications. In conclusion, this study considers the current landscape and challenges, providing predictions for future research directions. It is hoped that this work will contribute positively to the progression of machine learning-assisted MOS gas sensor arrays and offer valuable insights for gas sensing data processing.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 9","pages":" 4285-4303"},"PeriodicalIF":5.7,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143513036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced ammonia sensing with the MAPbBr3 perovskite and (R/S)-OBN-tCz: a study on sensitivity and stability improvements†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-31 DOI: 10.1039/D4TC04794J

Chang Zhang, Xin Zhang, Wei Wang, Hao Xue, Qian He, Fenglin Li, Xiaoli Wang, Qinghui Jin, Kun Zhou and Jiawen Jian

引用次数: 0

Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-31 DOI: 10.1039/D4TC04545A

Ulrich W. Bläβ, Mingjian Wu, Boris Epelbaum and Elke Meissner

{"title":"Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices","authors":"Ulrich W. Bläβ, Mingjian Wu, Boris Epelbaum and Elke Meissner","doi":"10.1039/D4TC04545A","DOIUrl":"https://doi.org/10.1039/D4TC04545A","url":null,"abstract":"Aluminium scandium nitride appears as a promising material for future wide band gap semiconductor devices, due to its large spontaneous polarisation effects. Extensive annealing experiments with regard to time and temperature of sputtered (Al,Sc)N thin films result in an ordering of such disordered and metastable materials of wurtzite structure into a so far unknown layered phase, once temperature allows sufficient cationic and anionic diffusion beyond ∼1200 °C. Detailed transmission electron microscopy investigations of this layered phase reveal the complete and self-organised ordering of scandium into octahedrally coordinated basal planes in between several AlN layers of wurtzite structure. The specific numbers of layers spread statistically around an average value depending on the chemical composition and formation temperature. Further investigations of the onset of such phase formation at 1400 °C demonstrate that partially disordered sequences of Sc-bearing basal planes can be thermodynamically interpreted as exsolution lamellae of monolayer thickness. These structural alterations may considerably affect the thermal stability and reliability of devices. The theoretically outstanding physical properties can be lost by the formation of octahedrally coordinated Sc in AlN during any appropriate high temperature deposition or annealing processes during device fabrication as well as due to migration effects during device operation.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 10","pages":" 4910-4920"},"PeriodicalIF":5.7,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc04545a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A one-dimensional organic–inorganic hybrid ferroelectric exhibiting a dielectric-optical duple switch†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-30 DOI: 10.1039/D4TC05162A

Qian-Jun Gu, Yu-Qiao Tong, Shi-Qing Yin, Ping Wang, Peng-Peng Gong, Ya-Juan Li, Yue Fang, Yang Zhao and Bo Huang

引用次数: 0

Breaking down the confinement effect on perovskite growth to fabricate efficient, carbon electrode-based mesoscopic perovskite solar cells via low-temperature and all-air procedures†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-30 DOI: 10.1039/D4TC04780J

De’en Guo, Jiao Ma, Heng Peng, Xiaohan Yu, Junhao Xue, Haipeng Xie, Han Huang, Deming Kong and Conghua Zhou

{"title":"Breaking down the confinement effect on perovskite growth to fabricate efficient, carbon electrode-based mesoscopic perovskite solar cells via low-temperature and all-air procedures†","authors":"De’en Guo, Jiao Ma, Heng Peng, Xiaohan Yu, Junhao Xue, Haipeng Xie, Han Huang, Deming Kong and Conghua Zhou","doi":"10.1039/D4TC04780J","DOIUrl":"https://doi.org/10.1039/D4TC04780J","url":null,"abstract":"Mesoporous skeleton brings confinement effect during the crystallization of the perovskite active layer, thus restricting the power conversion efficiency (PCE) of carbon-electrode (CE)-based, hole-conductor-free, mesoscopic perovskite solar cells (meso-CPSCs), especially of those prepared via low-temperature procedures. Here, the confinement is broken down by newly released micron-sized carbon-black spheres (CBSs). These CBSs help enlarge the mesopores from <10 to ∼70 nm in the CE layer and break down the confinement effect over perovskite growth. With carbon-black mass increasing from 0.0625 to 0.5 g, the average crystallite size of the PVSK increases from 30.9 to 58.2 nm, in addition to the improved contact at the buried interface of the PVSK. Accordingly, charge extraction is accelerated, recombination is retarded, and the PCE of low-temperature (150 °C) and all-air processed meso-CPSCs increases from 4.89 (±1.22)% to 11.33 (±0.28)%, which is further elevated to 16.28% through usage of thicker CEs. The strategy thus improves the PCE by more than 30% compared with the value reported in 2020, which competes with that of high-temperature (450 °C) produced meso-CPSCs when using similar (5-AVA)x(MA)1−xPbI3 as a photoactive layer. Quasi-maximum power point tracking was performed; a T80 of ∼690 h (the time required for PCE to reach 80% of its original value) was obtained for the first time for such low-temperature processed meso-CPSCs. This research paves the way to fabricate efficient meso-CPSCs using low-temperature and all-air procedures, which are expected to reduce production costs.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 10","pages":" 5346-5355"},"PeriodicalIF":5.7,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simultaneous enhancement of piezoelectricity and Curie temperature in KNN-based ceramics via a multiple formula solid solution†

IF 5.7 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-01-29 DOI: 10.1039/D4TC05103C

Hongjiang Li, Ning Chen, Jie Xing, Wenbin Liu, Zhi Tan, Hao Chen, Manjing Tang, Mingyue Mo and Jianguo Zhu

{"title":"Simultaneous enhancement of piezoelectricity and Curie temperature in KNN-based ceramics via a multiple formula solid solution†","authors":"Hongjiang Li, Ning Chen, Jie Xing, Wenbin Liu, Zhi Tan, Hao Chen, Manjing Tang, Mingyue Mo and Jianguo Zhu","doi":"10.1039/D4TC05103C","DOIUrl":"https://doi.org/10.1039/D4TC05103C","url":null,"abstract":"The development of lead-free, KNN-based piezoceramics with excellent comprehensive electrical properties is crucial for replacing commercial lead-containing counterparts and achieving an environmentally sustainable society. Although the proposed phase boundary engineering and local structure design can effectively improve the piezoelectric coefficients (d33) of KNN-based ceramics, the difficulty in achieving saturated poling and the inevitable requirement of sacrificing the Curie temperature (TC) are urgent issues that need to be addressed. Herein, we adopted a multiple formula solid-solution strategy that effectively overcomes the longstanding conflict between d33 and TC, which can be attributed to the balance between the well-maintained, long-range ferroelectric order and chaotic local disorder. This approach has resulted in superior comprehensive electrical properties for a KNN-based lead-free system, achieving a remarkable d33 of 550 pC N−1 and TC of 260 °C, which significantly outperform previously reported values. This work provides a method to achieve KNN-based ceramics with excellent comprehensive electrical properties, which is expected to benefit numerous functional materials.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 10","pages":" 5307-5316"},"PeriodicalIF":5.7,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143564351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0