Mehdi Pourbafrani, Mohammad Mahdi Abolhasani, Sara Azimi, Seyed Amir Abbas Kashanchi, Rasoul Ahadi-Hadibeyglu, Mohammad Aghanouri and Hamid Abdi
{"title":"Development of an electronic skin based on piezoelectric porous PVDF nanospheres for robotic perception","authors":"Mehdi Pourbafrani, Mohammad Mahdi Abolhasani, Sara Azimi, Seyed Amir Abbas Kashanchi, Rasoul Ahadi-Hadibeyglu, Mohammad Aghanouri and Hamid Abdi","doi":"10.1039/D5TC01220A","DOIUrl":"https://doi.org/10.1039/D5TC01220A","url":null,"abstract":"<p >With the rapid advancement of robotics and human–robot interactions, electronic skins (e-skins) have demonstrated great potential in robotics. Notably, the development of the emerging field of piezoelectric sensors can unveil flexible e-skins. Herein, a new type of e-skin based on piezoelectric porous polyvinylidene fluoride (PVDF) nanospheres for robotic perception has been reported. We have employed an elegant method based on the thermodynamics of polymer solutions to induce porosity in PVDF nanospheres. By adding a defined amount of water, chosen from the ternary phase diagram of PVDF/water/dimethylformamide (DMF), porous PVDF nanospheres have been synthesized. Piezoelectric measurements along with finite element method (FEM) simulations have confirmed that porous nanospheres generate a higher output voltage compared to dense ones. It is realized that the fabricated e-skin using porous PVDF nanospheres is thin, flexible, and durable. Besides, it can efficiently distinguish finger pressing. At the final stage, the e-skin integrated with electronic circuits and a microcontroller has been able to successfully control the grasp action of a robotic hand. Consequently, it can be envisioned that the proposed e-skin has great potential for future applications in robotics and human–robot interactions.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20742-20749"},"PeriodicalIF":5.1,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Satoshi Sasaki, Daichi Oka, Masamichi Negishi and Tomoteru Fukumura
{"title":"Metallic conduction in high Curie temperature ferromagnetic heavy rare earth monoxides REO (RE = Tb, Dy, Er): rare-earth-dependent carrier polarity and anomalous Hall effect","authors":"Satoshi Sasaki, Daichi Oka, Masamichi Negishi and Tomoteru Fukumura","doi":"10.1039/D5TC02202A","DOIUrl":"https://doi.org/10.1039/D5TC02202A","url":null,"abstract":"<p >Recently synthesized single-phase heavy rare earth monoxides, rocksalt type <em>RE</em>O (<em>RE</em> = Tb, Dy, Er), exhibited metallic electronic states with [Xe]4f<small><sup><em>n</em></sup></small>5d<small><sup>1</sup></small> electron configurations and high Curie temperature. Hence, the 4f–5d hybridization is expected to significantly influence the electrical transport properties. In this study, these <em>RE</em>Os were found to show metallic conduction with gradually varied carrier polarity, where TbO was an n-type metal, DyO was a partially compensated n-type metal, and ErO was a partially compensated p-type metal. This variable carrier polarity is probably due to the degree of 4f–5d hybridization depending on each <em>RE</em> ion. The anomalous Hall effect possessed a larger remanence and coercive field than those of the magnetization below each Curie temperature. Intriguingly, ErO showed unusual clockwise hysteresis loops of the anomalous Hall effect with a superficially positive anomalous Hall coefficient, in contrast with usual anticlockwise hysteresis loops of the positive anomalous Hall effect in TbO and DyO. This unusual behavior of ErO is likely due to multiple anomalous Hall effects or a superposed semimetallic ordinary Hall effect. The simple rocksalt structure, strong spin–orbit interaction, and various carrier polarities as well as anomalous Hall effect would be beneficial to develop spintronic heterostructures.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20728-20734"},"PeriodicalIF":5.1,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effects of halogen termination (F, Cl, and Br) and surface symmetry on the adsorption performance of Ti3C2 MXenes for H2S, SO2, and NO2 gases","authors":"Guorui Rao, Li Fang, Zikun Du and Wei Liu","doi":"10.1039/D5TC02409A","DOIUrl":"https://doi.org/10.1039/D5TC02409A","url":null,"abstract":"<p >The real-time detection of toxic and hazardous gases under ambient conditions is crucial for industrial safety and human health. However, traditional gas sensors suffer from low sensitivity, poor repeatability, high working temperature, and poor selectivity. MXenes are one of the frontier functional two-dimensional materials with potential in gas sensing. In this work, we systematically investigate the adsorption of three hazardous gases (H<small><sub>2</sub></small>S, SO<small><sub>2</sub></small>, and NO<small><sub>2</sub></small>) on halogen-functionalized Ti<small><sub>3</sub></small>C<small><sub>2</sub></small> MXenes using first-principles calculations, including both symmetric (Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>F<small><sub>2</sub></small>, Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>Cl<small><sub>2</sub></small>, and Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>Br<small><sub>2</sub></small>) and asymmetric (Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FCl, Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FBr, and Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>ClBr) ones. It is found that Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FCl–F and Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FBr–F are suitable for high-sensitive and fast-recovery chemiresistor NO<small><sub>2</sub></small> sensors, while Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FBr–Br can be used for H<small><sub>2</sub></small>S and SO<small><sub>2</sub></small> sensors. It is worth mentioning that Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>F<small><sub>2</sub></small>, Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>FCl–Cl, and Ti<small><sub>3</sub></small>C<small><sub>2</sub></small>BrCl–Cl acquire magneticity after NO<small><sub>2</sub></small> adsorption, which makes them potentially useful in spintronic or magnetic gas sensors. Besides, the adsorption mechanism is explained. The adsorption behaviour is more relevant to the terminal atoms on the surface, compared with the material itself; the intrinsic electric fields caused by the electrostatic potential difference between the two ends of asymmetric Janus structures can influence the charge transfer behaviour of gas molecules, which is promising for surface engineering of MXenes to meet specific demands.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20699-20714"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-performance photoelectric and self-powered properties of a p–n GaSe/SnS2 heterojunction by a built-in electric field","authors":"Dongxiang Li, Ruiqin Li and Yongting Zhao","doi":"10.1039/D5TC02357B","DOIUrl":"https://doi.org/10.1039/D5TC02357B","url":null,"abstract":"<p >The advancement and exploration of multifunctional, self-powered devices are significantly enhanced by the van der Waals (vdW) heterojunctions formed between two-dimensional (2D) materials. In this work, a GaSe/SnS<small><sub>2</sub></small> heterojunction was constructed using a GaSe monolayer and SnS<small><sub>2</sub></small> monolayer. The GaSe/SnS<small><sub>2</sub></small> heterojunction exhibited a steady structure and type-II arrangement. The presence of potential drop (<em>E</em><small><sub>P</sub></small>) in the heterojunction drives the formation with a built-in electric field, resulting in the ability to operate without the need for bias voltage and attainment of self-powered performance. The GaSe/SnS<small><sub>2</sub></small> heterojunction exhibited enhanced photoresponsivity in the ultraviolet region compared to a single material. The GaSe/SnS<small><sub>2</sub></small> heterojunction also achieved a maximum photocurrent of 3.9 a<small><sub>0</sub></small><small><sup>2</sup></small> per photon, and the measured extinction ratio was 38.3 at photon energies of 4.1 eV and 3.2 eV, respectively. In addition, vertical and biaxial strains played a crucial role in influencing the band structures and optoelectronic characteristics of the GaSe/SnS<small><sub>2</sub></small> heterojunction. We verified the experimentally discovered p–n type heterojunction, explained the high performance of GaSe/SnS<small><sub>2</sub></small>, and theoretically analyzed the self-powered capability and the modulation effect of strain on the GaSe/SnS<small><sub>2</sub></small> heterojunction. This work provides insights into the self-powered properties and strain modulation in 2D vdW heterojunctions and contributes to the development of multifunctional optoelectronic devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20690-20698"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of heat treatment on the martensite phase and magnetic properties of chemically synthesized Co2NiGa nanoparticles","authors":"Debraj Mahata and Ananthakrishnan Srinivasan","doi":"10.1039/D5TC02431E","DOIUrl":"https://doi.org/10.1039/D5TC02431E","url":null,"abstract":"<p >To achieve the martensite (M) phase at room temperature, chemically synthesized polycrystalline Co<small><sub>2</sub></small>NiGa nanoparticles (NPs) with a preponderance of the austenite (A) phase were reheated at different temperatures. Heat treatment at 1373 K led to a single M phase structure in stoichiometric Co<small><sub>2</sub></small>NiGa nanoparticles with excellent magnetic and shape memory properties. Room-temperature single M phase NPs transformed completely into the A phase when heated to 723 K, confirming the martensitic transition in Co<small><sub>2</sub></small>NiGa NPs. The synthesized NPs displayed a soft ferromagnetic nature with magnetic moment at 40 kOe under an applied field (<em>M</em><small><sub>sat</sub></small>) ranging from 35.1 emu g<small><sup>−1</sup></small> to 40.4 emu g<small><sup>−1</sup></small> at 5 K and from 13.0 to 26.4 emu g<small><sup>−1</sup></small> at 300 K. The Curie temperatures of the M and A phases were 350 ± 2 K and 896 ± 2 K, respectively. The analysis of the magnetic properties revealed the presence of a dead layer with a thickness of ≈1.67 nm and the single-domain nature of the M phase Co<small><sub>2</sub></small>NiGa NPs. By carefully selecting post-synthesis heat treatment conditions, the M ↔ A phase transition temperature and magnetic properties of Co<small><sub>2</sub></small>NiGa NPs can be tailored to suit potential nanoactuator applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20645-20653"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ruiqi Shan, Chenhao Qian, Xuyang Li, Xin Chen and Limin Wang
{"title":"Synthesis and application of isoindigo quaternary ammonium salts in copper plating","authors":"Ruiqi Shan, Chenhao Qian, Xuyang Li, Xin Chen and Limin Wang","doi":"10.1039/D5TC01743B","DOIUrl":"https://doi.org/10.1039/D5TC01743B","url":null,"abstract":"<p >Achieving uniform through-hole filling by copper electrodeposition is important for the fabrication of printed circuit boards (PCBs), and the development of suitable additives is a key process to realize efficient electrodeposition. Five isoindigo (IID) quaternary ammonium salts were synthesized using isoindigo molecules as the core skeleton. Electrochemical tests, theoretical calculations, and molecular dynamics simulations demonstrated that the isoindigo derivatives have the ability to act as leveler and exhibit electrode absorption capacity, among which IID-C4-QL showed the best inhibition of copper deposition as well as the best cathodic adsorption ability. The high through-hole filling and excellent leveling performance of IID-C4-QL were confirmed by actual electroplating tests.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20715-20727"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Christopher Renskers, Catalin D. Spataru, Marios Zacharias, Sakun Duwal, Timothy Elmslie, Peter A. Sharma and Elena R. Margine
{"title":"Prediction of high-temperature superconductivity in LaH4 at low pressures","authors":"Christopher Renskers, Catalin D. Spataru, Marios Zacharias, Sakun Duwal, Timothy Elmslie, Peter A. Sharma and Elena R. Margine","doi":"10.1039/D5TC02600H","DOIUrl":"https://doi.org/10.1039/D5TC02600H","url":null,"abstract":"<p >Superconducting hydrides have received significant attention in the last decade due to their potential for room-temperature superconductivity. However, achieving high critical temperatures (<em>T</em><small><sub>c</sub></small>s) typically requires extreme pressures exceeding 150 GPa. Recently, a new, low-pressure <em>R</em><img><em>m</em>-LaH<small><sub>4</sub></small> phase was observed to form above approximately 20 GPa. Here, we perform first-principles calculations to investigate the electron–phonon interactions and superconducting properties of the new phase across a range of pressures. At the harmonic level, the system is found to be dynamically unstable, but this is remedied through the inclusion of anharmonic effects. We estimate that <em>T</em><small><sub>c</sub></small> reaches up to 115 K at 25 GPa, driven by a high density of states at the Fermi level (<em>N</em><small><sub>F</sub></small>) and soft phonon modes. However, superconductivity is suppressed with increasing pressure, as <em>T</em><small><sub>c</sub></small> rapidly decreases to 34 K at 60 GPa and 11 K at 100 GPa, due to a reduction in <em>N</em><small><sub>F</sub></small> and phonon hardening.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20571-20579"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02600h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sakineh Akbari Nia, Paulina Powroźnik, Mieczyslaw A. Pietrzyk and Maciej Krzywiecki
{"title":"Navigating the ZnO/metal phthalocyanine interface in OLEDs: challenges, perspectives, and engineering strategies","authors":"Sakineh Akbari Nia, Paulina Powroźnik, Mieczyslaw A. Pietrzyk and Maciej Krzywiecki","doi":"10.1039/D5TC02786A","DOIUrl":"https://doi.org/10.1039/D5TC02786A","url":null,"abstract":"<p >The interface between inorganic charge injection/transport layers and organic functional layers is crucial for the performance and stability of organic light-emitting diodes (OLEDs), since this hybrid structure is the most strategic area in the operation of OLEDs. Zinc oxide (ZnO) as an efficient electron injection/transport layer and metal phthalocyanines (MPcs) as hole injection/transport and emission layers are individually well-established materials in OLED architectures; however, the direct integration and optimization of their interface suffer from a lack of consideration. This perspective addresses the potential challenges and opportunities associated with the ZnO/MPc interface in OLEDs. It analyzes potential issues such as work function (WF), interface morphology, chemical stability, exciton quenching, and charge trapping by seeking the related material systems and considering the electronic/structural properties of ZnO and MPcs. Additionally, we present a comprehensive view on the promising strategies for interface engineering for ZnO-based interfaces to enhance device performance, aiming to outline the potential device architectures leveraging the unique properties of the ZnO/MPc interface. Finally, we propose key future research directions to show some hidden potential of this material combination for OLED fabrication.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20463-20481"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}