Journal of Materials Chemistry C最新文献

{"title":"Plasmon-enhanced organic field effect transistors","authors":"Navneet Kumar, Howe R. J. Simpson, Md Masud Rana and Karthik Shankar","doi":"10.1039/D4TC04595E","DOIUrl":"https://doi.org/10.1039/D4TC04595E","url":null,"abstract":"<p >The low cost and ease of fabrication of organic electronics is often overlooked due to their lower performance parameters and poor stability under atmospheric conditions. Thus, steps need to be taken to improve technology in meaningful ways to compete with their inorganic counterparts. In this context, the integration of plasmonic materials and nanostructures into the channel or gate dielectric of organic field transistors (OFETs) enables improvements in the performance and function of phototransistors, transistor-based optical memory devices, organic light emitting transistors (OLETs) and organic electrochemical transistors (OECTs). Plasmonic nanoparticles have been used to fabricate the floating gate of FET memory devices and generate adaptable shifts in the threshold voltage. The detection sensitivity of OECTs was enhanced by the local electromagnetic field enhancement effect and improved electron transfer effect associated with gold nanoparticles integrated into the OECT. Schottky barrier phototransistors integrated with chiral plasmonic nanoparticles enable detection of circularly polarized light. In OLETs, integration with surface plasmons improves local electroluminescence yields as well as the directionality of emission and the light outcoupling efficiency. Graphene plasmons achieved strong confinement of THz radiation and thus enabled gated terahertz detectors.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 9951-9972"},"PeriodicalIF":5.7,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc04595e?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive survey of plasmonic nano-dendrites: from fabrication to surface-enhanced Raman scattering (SERS) applications","authors":"Dhatchayani Murugan, Akila Chithravel, Abhishek S. Shekhawat, Aarti Diwan, Sonika Sharma, Neetika Singh, Ravi Kumar, Dharmsheel Shrivastav, Tulika Srivastava, Shailendra K. Saxena and Anand M. Shrivastav","doi":"10.1039/D5TC00316D","DOIUrl":"https://doi.org/10.1039/D5TC00316D","url":null,"abstract":"<p >Dendrites are beautifully designed branched structures found everywhere in nature, for example, in neurons, snowflakes, and trees. These unique properties of dendritic structures contribute to their applications in tissue integration, light manipulation, energy storage, charge transport, sensing, and other fields. In recent years, plasmonic nanodendrites have been extensively employed for surface-enhanced Raman scattering (SERS) applications, incorporating the highly dense electromagnetic field hot spots at the dendritic tips in addition to the increased surface area. These structures have shown their potential for sensing a wide range of analytes, including explosives, pesticides, bacteria, and viruses. This review provides in-depth information about the fundamentals of the SERS mechanism, fabrication techniques to manipulate dendrite structures for improved SERS performance, and the role of nanodendrite structures in SERS applications. Through an extensive survey, this review compiles the current state-of-the-art technologies for developing plasmonic dendrites and applying them for SERS-based sensing applications. Finally, we present the current challenges and future perspectives of developing such sensors.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10507-10528"},"PeriodicalIF":5.7,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process optimization of contact interface layer for maximizing the performance of Mg3(Sb,Bi)2 based thermoelectric compounds†","authors":"Muhammad Fasih Aamir, Raju Chetty, Jayachandran Babu and Takao Mori","doi":"10.1039/D5TC00851D","DOIUrl":"https://doi.org/10.1039/D5TC00851D","url":null,"abstract":"<p >Mg<small>₃</small>(Sb,Bi)<small>₂</small> based compounds exhibit promising thermoelectric (TE) performance within the 300–700 K range, making them suitable for mid-temperature applications; yet achieving optimal electrical contact between the TE material and the contact material is crucial. One-step sintering has emerged as a widely used technique for establishing these contacts in Mg<small>₃</small>(Sb,Bi)<small>₂</small> compounds, though variations in process parameters can impact contact quality and, consequently TE conversion efficiency. Therefore, this study explores the optimization of Mg<small>₃</small>(Sb,Bi)<small>₂</small> compounds using spark plasma sintering with stainless steel (SS) 304 contacts at three different temperatures of 973 K, 1023 K, and 1073 K. By increasing the sintering temperature from 973 K to 1073 K, a significant reduction in the specific contact resistivity (<em>ρ</em><small>_c</small>) by ∼60% is realized, without compromising TE properties. Furthermore, it was found that replacing SS powder (SS<small>_p</small>) with SS foil (SS<small>_f</small>) could lead to more uniform and dense layers, achieving a lower specific <em>ρ</em><small>_c</small> value of 8.2 μΩ cm<small>²</small> at the interface. A maximum conversion efficiency (<em>η</em><small>_max</small>) of ∼9.3% was obtained at a temperature difference (Δ<em>T</em>) of ∼380 K for SS<small>_f</small>/Mg<small>₃</small>(Sb,Bi)<small>₂</small>/SS<small>_f</small> sintered at 1073 K. Moreover, thermal aging for 30 days at 673 K confirms the robustness of SS<small>_f</small>/Mg<small>₃</small>(Sb,Bi)<small>₂</small>/SS<small>_f</small> contacts with negligible degradation of TE properties and conversion efficiency of the TE single leg.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10567-10575"},"PeriodicalIF":5.7,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc00851d?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solvatochromic multi-colour fluorescence driven by thiol-type ESIPT in a 1-mercapto-naphthaldiimide compound†","authors":"Yuka Ando, Marina Doi, Haonan Liu and Shinji Ando","doi":"10.1039/D5TC01389E","DOIUrl":"https://doi.org/10.1039/D5TC01389E","url":null,"abstract":"<p >A novel thiol (SH)-type excited-state intramolecular proton transfer (ESIPT) compound, 1SNT-IC, was designed and synthesized. 1SNT-IC exhibited bright red fluorescence (FL) with large Stokes shifts (∼7200 cm<small>⁻¹</small>) under UV irradiation, mediated by ESIPT. This is the first example of an SH-type ESIPT imide compound. When dispersed in amorphous polymers, 1SNT-IC exhibited dual FL emission from the excited normal (N*) and tautomeric (T*) forms, with the latter's wavelength varying according to the polarity of the matrices. In various solvents, FL from the excited anion (A*) form was also observed, in addition to those from N* and T*. The FL wavelengths of T* and A* also varied with the polarity of the solvent. These environmental sensitivities have rarely been observed for the NH-type ESIPT compounds. This could be attributed to the weak intramolecular hydrogen bond (S–H⋯O) strength and the electron-withdrawing naphthalimide moiety.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 9997-10001"},"PeriodicalIF":5.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144117566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Short-range aggregation regulation of conjugated polymers: high mobility and cyclic tensile stability driven by chemical crosslinking†","authors":"Rui Chen, Yiting Liu, Teng Li, Zhongxiang Peng, Hongxiang Li, Sichao Huang, Zicheng Ding, Xiaozheng Duan, Yuan-Qiu-Qiang Yi and Yanchun Han","doi":"10.1039/D5TC00802F","DOIUrl":"https://doi.org/10.1039/D5TC00802F","url":null,"abstract":"<p >Conjugated polymer films show great potential in wearable electronics. However, it is challenging to maintain the initial electrical performance of conjugated polymer films during cyclic stretching. Herein, we modulate the electrical and mechanical properties of a conjugated polymer poly(indenothiophene-<em>co</em>-benzothiadiazole) (IDTBT) by chemical crosslinking with a small molecule (((oxybis(ethane-2,1-diyl))bis(oxy))bis(4,1-phenylene))bis(phenylmethanone) (BP), aiming to improve the electrical stability during cyclic stretching. Under ultraviolet illumination, BP with two benzophenone end groups can form high-activity biradicals to abstract the aliphatic hydrogens on the alkyl sidechains of IDTBT, producing a crosslinked film. Compared to the pristine film, the crosslinked film shows decreased long-range ordering but tightly packed π–π stacks with more co-planar backbones. During stretching, the flexible oligomeric (ethylene glycol) linkers enhance the conformational freedom of polymer chains and the chemical crosslinking prevents irreversible chain slippage, significantly enhancing cyclic stretchability. Meanwhile, the physical crosslinked short-range ordered aggregates provide efficient charge transport channels. Consequently, the crosslinked film shows the charge carrier mobility of 0.92 ± 0.03 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small> at 100% strain and the nearly constant mobility of 0.86 ± 0.04 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small> after cyclic stretching-releasing at 30% strain for 1000 times.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10857-10870"},"PeriodicalIF":5.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An artificial visual perception system based on ZnO threshold switching neurons with integrated rate and time-to-first-spike coding†","authors":"Liang Wang, Le Zhang, Shuaibin Hua, Puli Gan, Qiuyun Fu and Xin Guo","doi":"10.1039/D5TC00149H","DOIUrl":"https://doi.org/10.1039/D5TC00149H","url":null,"abstract":"<p >The proliferation of wearable electronics and Internet of Things (IoT) has driven the development of energy-efficient sensory processing systems inspired by the spiking mechanisms of the human sensory system. In this study, we present an artificial neuron integrated with an Ag/ZnO/Pt volatile threshold switching (TS) memristor for artificial visual perception and neuromorphic computing. The memristor exhibits electroforming-free operation, stable volatile switching behavior (with a cumulative probability variation of 1.508%), high ON/OFF ratios (∼1.64 × 10<small>⁴</small>), and excellent device uniformity, enabling it to effectively emulate biological neuronal functions such as spike encoding and leaky integrate-and-fire (LIF) dynamics. By integrating the memristor with photoresistors, an artificial visual neuron was developed, capable of spatial integration and letter recognition through distinct oscillation frequencies. Furthermore, an artificial visual perception system incorporating a spiking neural network (SNN) based on ZnO neurons was implemented for Yale facial image classification and MNIST digit recognition, employing the rate coding, the time-to-first-spike (TTFS) coding, and the rate-temporal fusion (RTF) coding strategies. Notably, the artificial visual perception system employing the RTF coding achieved the highest accuracy (94.4% for the Yale facial images and 91.3% for MNIST images) with superior energy efficiency. These results highlight the potential of ZnO-based artificial neurons for energy-efficient neuromorphic computing and intelligent sensory systems.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10848-10856"},"PeriodicalIF":5.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of a proquinoidal [1,2,5]thiadiazolo[3,4-g]quinoxaline-based small molecule acceptor toward high-sensitivity shortwave infrared photodetection†","authors":"Weiqi Zhang, Qingxia Liu, Liu Yuan, Hanwen Zhang, Jiaqi Wang, Yang Wang, Yunxiang Deng, Yunhong Huang, Yadong Jiang and Huiling Tai","doi":"10.1039/D5TC00642B","DOIUrl":"https://doi.org/10.1039/D5TC00642B","url":null,"abstract":"<p >Expanding the detection wavelength into the short-wave infrared region represents a significant challenge for organic photodetectors (OPDs) to enable a wide range of advanced applications. Herein, we developed a small molecule acceptor (SMA) with a spectral response extending beyond 1200 nm by incorporating a proquinoidal [1,2,5]thiadiazolo[3,4-<em>g</em>]quinoxaline derivative as the core unit. Using PTB7-Th as the donor component, organic photodiode devices based on this SMA achieved a notable responsivity of 0.16 A W<small>⁻¹</small> at 1100 nm and a high specific detectivity (<em>D</em>*) value exceeding 1 × 10<small>¹²</small> Jones across a broad spectral range of 550–1150 nm under photovoltaic mode (0 V bias). Furthermore, we demonstrated high-quality real-time pulse monitoring under an ultra-low light power of 2.42 μW cm<small>⁻²</small> at 1064 nm, highlighting its potential to significantly reduce energy consumption in healthcare applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10632-10639"},"PeriodicalIF":5.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Iodide substituted halide-rich lithium argyrodite solid electrolytes with improved performance for all solid-state batteries†","authors":"Adwitiya Rao, Jacob Rempel, Ming Jiang, Parvin Adeli, Chae-Ho Yim, Mohamed Houache, Yaser Abu-Lebdeh and Chandra Veer Singh","doi":"10.1039/D5TC00529A","DOIUrl":"https://doi.org/10.1039/D5TC00529A","url":null,"abstract":"<p >Halogen substitution has been a widely accepted strategy to boost ionic conductivity of lithium argyrodites. Mixed halide argyrodites containing Cl and Br have been shown to be promising candidates as solid electrolytes, featuring high room temperature ionic conductivities &gt;10 mS cm<small>⁻¹</small>. This study focuses on the less explored halide-rich Cl–I mixed halide argyrodites as solid-state electrolytes, comparing them to their Cl–Br analogues. DFT calculations reveal that Cl–I argyrodites possess enhanced phase stability and electrode compatibility. Despite differences in the type of halogen used, Cl–I and Cl–Br argyrodites exhibit similar ionic conductivities at equivalent Cl/X (X = Br, I) ratios. AIMD simulations of Li<small>_5.5</small>PS<small>_4.5</small>Cl<small>_{1.5−<em>x</em>}</small>I<small>_<em>x</em></small> systems identify an optimal I and Cl content of 0.75 each, yielding a maximum conductivity of 23.5 mS cm<small>⁻¹</small>, attributed to enlarged Li<small>⁺</small> migration channels.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10733-10739"},"PeriodicalIF":5.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc00529a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intermediate- and high-temperature Li batteries with enhanced performance enabled by a hollow C-MoS2 nanosphere electrode†","authors":"Ting Quan, Xiaoyu Wei, Binchao Shi, Xinya Bu, Qi Xia and Yanli Zhu","doi":"10.1039/D5TC00747J","DOIUrl":"https://doi.org/10.1039/D5TC00747J","url":null,"abstract":"<p >With the continuous upsurge in demand for energy storage, batteries are increasingly required to operate at intermediate and high temperatures. Water-in-salt Li-ion batteries (WIS-LIBs) and molten-salt high-temperature Li batteries (MHLBs) possess inherent safety and are commendable facing intermediate and high temperature working conditions, respectively. However, considering the cost-effectiveness, the performance and in-depth working mechanism of the same material for both intermediate- and high-temperature batteries are seldom investigated. Herein, hollow C-MoS<small>₂</small> nanospheres have been employed as the electrode material for WIS-LIBs at 60 °C and MHLBs at 500 °C. When applied as the anode material in WIS-LIBs at 60 °C, the material exhibits a high specific capacity (128.9 mAh g<small>⁻¹</small> at 0.5 A g<small>⁻¹</small>), great rate capability, and long cycling stability. This is mainly ascribed to the unique Li<small>⁺</small> storage in the hollow nanosphere structure, fast ionic transfer and the more favorable formation of a dense SEI film at intermediate temperatures. During the battery operation, MoS<small>₂</small> undergoes phase transformation to Li<small>₃</small>Mo<small>₆</small>S<small>₈</small> and Li<small>₄</small>MoO<small>₅</small> in the initial Li<small>⁺</small> ion uptake and transforms to MoS<small>₂</small> and MoO<small>₃</small> after discharging in WIS-LIBs. When operated at 500 °C, high voltage plateaus and a high discharging specific capacity of 509.51 mAh g<small>⁻¹</small> at 0.25 A g<small>⁻¹</small> can be obtained in MHLBs. During galvanostatic discharging, MoS<small>₂</small> firstly transforms to Li<small>₃</small>Mo<small>₆</small>S<small>₈</small> and then to metallic Mo. All these results have revealed the excellent electrochemical performance and the working mechanism of the as-synthesized hollow C-MoS<small>₂</small> nanospheres in both intermediate- and high-temperature batteries. This work can inspire researchers to explore novel and advanced materials for batteries towards harsh working conditions and extend the environmental frontiers of the battery electrode materials studied at present.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10611-10620"},"PeriodicalIF":5.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Largely enhanced bulk photovoltaic effects in a two-dimensional MoSi2N4 monolayer photodetector by vacancy-doping and bending-increased device asymmetry†","authors":"Tingting Duan, Yongsheng Yao, Juexian Cao and Xiaolin Wei","doi":"10.1039/D5TC01472G","DOIUrl":"https://doi.org/10.1039/D5TC01472G","url":null,"abstract":"<p >Two-dimensional MoSi<small>₂</small>N<small>₄</small> monolayer semiconductors have garnered significant research attention for ultraviolet (UV) photodetection due to their outstanding performance, including ultrafast response, high responsivity, and low dark current. Using quantum transport simulations, we proposed a kind of self-powered, highly ultraviolet-sensitive polarized photodetector driven by the bulk photovoltaic effect (BPVE) based on α<small>₁</small>- and α<small>₂</small>-MoSi<small>₂</small>N<small>₄</small> monolayer semiconductors. Here, we systematically investigated the photoelectronic properties of the MoSi<small>₂</small>N<small>₄</small> monolayer with bending angles <em>θ</em> of 10°, 20°, and 30°, as well as vacancies in Mo, Si, and N atoms. The BPVE photocurrent can be generated in the MoSi<small>₂</small>N<small>₄</small> monolayer under vertical illumination with linearly polarized light. Our results indicate that both bending stress and vacancies can reduce the symmetry of the MoSi<small>₂</small>N<small>₄</small> monolayer photodetectors, which will result in an enhanced bulk photovoltaic effect and an increase in the photocurrent. Besides, a large and highly polarization-sensitive photocurrent is generated at zero bias voltage, which exhibits a remarkably high extinction ratio (ER) of up to 449 in the photodetector with an Si atom vacancy. Moreover, by applying an appropriate bending stress on MoSi<small>₂</small>N<small>₄</small>, the photocurrent can be substantially enhanced by up to 2 orders of magnitude, which is primarily due to the largely increased device asymmetry. Our findings not only highlight the dependence of the BPVE photocurrent on the device asymmetry during the transport process through a device, but also demonstrate the potential of the BPVE for self-powered flexible optoelectronics and photodetection with high photoresponsivity.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10750-10758"},"PeriodicalIF":5.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144171135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}