Journal of Materials Chemistry C最新文献

{"title":"Room-temperature gas sensors based on low-dimensional nanomaterials","authors":"Young-Woo Jang, Jeong-Wan Jo, Sung Kyu Park and Jaehyun Kim","doi":"10.1039/D4TC03729D","DOIUrl":"https://doi.org/10.1039/D4TC03729D","url":null,"abstract":"<p >Recent atmospheric pollution which is mainly caused by an ever-increasing population, industrial gas waste, vehicle exhaust emissions, and indiscriminate burning of garbage has become a serious problem for the modern natural environment. It is necessary to continuously detect these gas pollutants and monitor toxic gases to prevent environmental deterioration. Room-temperature gas sensors have attracted considerable attention in the current gas sensor industry because of advantages such as low power consumption, great stability and simple manufacturing processes for low-cost sensor systems, smart electronics, and specifically Internet of Things (IoT) platforms. In particular, new emerging low-dimensional nanomaterials play a critical role in enhancing sensing properties owing to their unique structure and remarkable electronic, mechanical, and optical characteristics. This review presents the recent state-of-the art development of room-temperature gas sensor technologies based on low-dimensional nanomaterials. Various nanostructure materials such as 0D, 1D, and 2D nanomaterials are widely introduced and essential investigations of external stimuli methods including voltage biasing and light stimulation for driving gas sensing performance without relying on high temperature are fully covered. Finally, various device applications and recent developments including wearable gas sensors, machine learning and neuromorphic olfactory devices are discussed and future prospects and perspectives on the challenges and opportunities of room-temperature gas sensors based on low-dimensional nanomaterials are also provided.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18609-18627"},"PeriodicalIF":5.7,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A three-step change in uniaxial negative thermal expansion by switching supramolecular motion modes in a ferromagnetically coupled nickel dithiolate lattice†","authors":"Masato Haneda, Kiyonori Takahashi, Naohiro Hasuo, Rui-Kang Huang, Chen Xue, Jia-bing Wu, Shin-ichiro Noro and Takayoshi Nakamura","doi":"10.1039/D4TC03992K","DOIUrl":"https://doi.org/10.1039/D4TC03992K","url":null,"abstract":"<p >The wheel–axle-type supramolecule ((<small>⁺</small>H<small>₃</small>N–C<small>₂</small>H<small>₄</small>)<small>₂</small>O)([18]crown-6)<small>₂</small> was introduced into a crystal as a counter cation of [Ni(dmit)<small>₂</small>]<small>⁻</small>. Within the crystal, [Ni(dmit)<small>₂</small>]<small>⁻</small> was arranged in a honeycomb-like structure and one-dimensional chains formed by ((<small>⁺</small>H<small>₃</small>N–C<small>₂</small>H<small>₄</small>)<small>₂</small>O)([18]crown-6)<small>₂</small> penetrated each honeycomb lattice. In the supramolecular structure, (<small>⁺</small>H<small>₃</small>N–C<small>₂</small>H<small>₄</small>)<small>₂</small>O behaved as a rigid axle. Two [18]crown-6 molecules, <strong>CE1</strong> and <strong>CE2</strong>, behaving like wheels, were crystallographically independent of each other, with <strong>CE2</strong> showing disorder. The crystal exhibited uniaxial negative thermal expansion (NTE). With increasing temperature, the disordered state of <strong>CE2</strong> changed, resulting in a change in the coefficient of linear thermal expansion (CLTE) of the crystal in all directions. In the <em>X</em><small>₁</small> direction, where NTE was observed, the CLTE was relatively small at −18 × 10<small>⁻⁶</small> K<small>⁻¹</small> in phase I (113–133 K) in which <strong>CE2</strong> was static. In phase II (143–193 K), when <strong>CE2</strong> starts to rotate, the CLTE of the NTE increases significantly to −74 × 10<small>⁻⁶</small> K<small>⁻¹</small>. Furthermore, in phase III (213–293 K), where [18]crown-6 out-of-plane motion is also involved, the NTE is extremely large with a value of −105 × 10<small>⁻⁶</small> K<small>⁻¹</small>. Ferromagnetic interactions between [Ni(dmit)<small>₂</small>]<small>⁻</small> molecules were observed, with the Weiss temperature of +1.41 K. Multi-step changes in the mode of motion in supramolecular structures may offer new possibilities for multi-step control of the thermal expansion of crystals.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19398-19403"},"PeriodicalIF":5.7,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modifying the liquid crystalline chessboard tiling – soft reticular self-assembly of side-chain fluorinated polyphiles†","authors":"Christian Anders, Virginia-Marie Fischer, Tianyi Tan, Mohamed Alaasar, Rebecca Waldecker, Yubin Ke, Yu Cao, Feng Liu and Carsten Tschierske","doi":"10.1039/D4TC04076G","DOIUrl":"https://doi.org/10.1039/D4TC04076G","url":null,"abstract":"<p >Development of new functional materials requires the understanding of the fundamental rules of complex superstructure formation in self-assembling systems. Here we report new liquid crystalline honeycombs based on reticular self-assembly of bolapolyphilic rods with two mutually incompatible and branched side-chains, one a semiperfluorinated, the other one a non-fluorinated alkyl chain, all derived from the chessboard tiling by cell deformation due to distinct modes of tilting of π-conjugated rods within or out of the crystallographic plane. Among them the new square + rhomb tiling and a stretched rectangular “chessboard” tiling, both with alternatingly filled prismatic cells, are constructed. Out of plane tilting leads to cell shrinking and cell deformation. Nonfluorinated polyaromatic cores allow a continuously changing tilt, retaining the square cells by simultaneously tilting all molecules, associated with an inversion of the birefringence <em>via</em> an optically isotropic state. In contrast, fluorinated cores with different discrete face-to-face stacking modes can assume only discrete tilt angles, which provides rectangular cells with only two walls being tilted. The system offers even more phases including single-color cells with sparingly packed “voids” and a three-color rhomb tiling with additional mixed cells. The research uncovers basic rules of reticular self-assembly by formation of soft multi-functional liquid-crystalline materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 37-53"},"PeriodicalIF":5.7,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc04076g?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solidifying the role of hydrogen bonds in conjugated polymers for wearable electronics","authors":"Megan M. Westwood and Bob C. Schroeder","doi":"10.1039/D4TC03666B","DOIUrl":"https://doi.org/10.1039/D4TC03666B","url":null,"abstract":"<p >Conjugated polymers are often functionalised with hydrogen bonding motifs, to impart self-healing or stretchability for wearable electronic applications. Through refinement of characterisation techniques in recent years, the effect of these supramolecular groups has become increasingly well understood. However, challenges remain to clearly decouple the effects of functionalisation with the complex nature of this polymer class. In this perspective we examine the current methods of characterisation and discuss how focus on the mechanical properties will be beneficial for setting out future design rules. Finally, we investigate the use of these techniques within the reported literature to highlight trends in the critical properties of the materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19017-19029"},"PeriodicalIF":5.7,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc03666b?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the time-resolved detection performance of β-Ga2O3-based SBUV photodetectors: surface chemical analysis and the impacts of non-VO factors†","authors":"Zeming Li, Rensheng Shen, Wancheng Li, Teng Jiao, Yuchun Chang, Hongwei Liang, Xiaochuan Xia and Baolin Zhang","doi":"10.1039/D4TC03701D","DOIUrl":"https://doi.org/10.1039/D4TC03701D","url":null,"abstract":"<p >The time-resolved detection performance of β-gallium oxide (β-Ga<small>₂</small>O<small>₃</small>)-based solar-blind ultraviolet (SBUV) photodetectors (PDs) are garnering extensive research attention. Generally, variations in the response and recovery rates of β-Ga<small>₂</small>O<small>₃</small>-based PDs have been attributed to oxygen vacancies (V<small>_O</small>), typically analyzed through X-ray photoelectron spectroscopy (XPS) O 1s spectra. However, in this study, we fabricated SBUV PDs with β-Ga<small>₂</small>O<small>₃</small> films grown <em>via</em> metal–organic chemical vapor deposition (MOCVD). The surface chemical analysis of the obtained films reveals that the XPS O 1s spectra are unaffected by V<small>_O</small>. Additionally, by correlating film properties with PD performance, we demonstrate the significant role of non-V<small>_O</small> factors in shaping the time-resolved detection performance of these devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 491-499"},"PeriodicalIF":5.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shear-structured piezoelectric accelerometers based on KNN lead-free ceramics for vibration monitoring†","authors":"Yi Ding, Yu Wang, Wenbin Liu, Yongqi Pan, Ping Yang, Dechao Meng, Ting Zheng and Jiagang Wu","doi":"10.1039/D4TC04292A","DOIUrl":"https://doi.org/10.1039/D4TC04292A","url":null,"abstract":"<p >The process of promoting the transition of piezoelectric devices to lead-free requires consideration from multiple dimensions, including materials, devices and processes. In the key field of vibration monitoring, there has been a notable lack of attention paid to the shear mode of lead-free piezoelectric ceramics, leaving a gap in research on shear-mode accelerometers utilizing lead-free perovskite-structured ceramics. In this study, potassium sodium niobate (KNN)-based benign piezoelectric ceramics were synthesized and their complete set of material constants were characterized. Leveraging the higher shear piezoelectric coefficient of the ceramics, an annular shear-structured piezoelectric accelerometer based on KNN ceramics was successfully fabricated for the first time. Simulation and experiment verified that the shear-structured sensor exhibits good charge sensitivity (<em>S</em><small>_q</small> = 9.49 pC g<small>⁻¹</small>), low nonlinearity (&lt;1%) within a range of 0.5–20 g, and stability in both sensitivity and phase angle with fluctuations within ±5% across a frequency range of 20 Hz to 3000 Hz. In addition, we propose that using the effective piezoelectric coefficient (<em>d</em><small>_<em>ij</em></small> (eff)) is an important guiding significance for evaluating the practical application performance of piezoelectric materials. This research will promote the practical application of lead-free piezoelectric ceramics in the field of vibration monitoring.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18639-18650"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Emergence of heavy-fermion behavior and distorted square nets in partially vacancy-ordered Y4FexGe8 (1.0 ≤ x ≤ 1.5)†","authors":"Hengdi Zhao, Xiuquan Zhou, Mohammad Usman, Ramakanta Chapai, Lei Yu, Jianguo Wen, Hyowon Park, Alexios P. Douvalis, Patricia E. Meza, Yu-Sheng Chen, Ulrich Welp, Stephan Rosenkranz, Duck Young Chung and Mercouri G. Kanatzidis","doi":"10.1039/D4TC03601H","DOIUrl":"https://doi.org/10.1039/D4TC03601H","url":null,"abstract":"<p >Disorders in intermetallic systems belonging to the CeNiSi<small>₂</small>-family are frequently overlooked. Even compounds presumed to be stoichiometric, such as YFeGe<small>₂</small>, can be misidentified. Here, we report a series of Y<small>₄</small>Fe<small>_<em>x</em></small>Ge<small>₈</small> (1.0 ≤ <em>x</em> ≤ 1.5) compounds and show, using high-resolution synchrotron X-ray diffraction, that they feature asymmetrical structural distortions in the Fe and Ge sites that lead to a superstructure with partially ordered Fe vacancies and distorted Ge square-net in the triclinic crystal system, space group <em>P</em><img> with <em>a</em> = 11.4441(3) Å, <em>b</em> = 32.7356(7) Å, <em>c</em> = 11.4456(3) Å, <em>α</em> = 79.6330(10)°, <em>β</em> = 88.3300(10)°, and <em>γ</em> = 79.6350 (10)°. The unit cell is 16 times the conventional orthorhombic cell with the space group <em>Cmcm</em>. We identified the lower and upper limits for Fe in Y<small>₄</small>Fe<small>_<em>x</em></small>Ge<small>₈</small> (1.0 ≤ <em>x</em> ≤ 1.5). Our physical property measurements yielded a Sommerfeld coefficient <em>γ</em> = 39.8 mJ mole<small>⁻¹</small> K<small>⁻²</small>, a Kadowaki–Woods ratio of 1.2 × 10<small>⁻⁵</small> μΩ cm mole<small>²</small> K<small>²</small> mJ<small>⁻²</small>, and a Wilson ratio of 1.83, suggesting heavy fermion behavior in the absence of f electrons, a rather rare case. Furthermore, we observed strong spin frustration and noted findings indicating possible superconductivity associated with the Fe content.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 103-115"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition","authors":"Sang-Joon Park, Se-Ryong Park, Jong Mu Na, Woo-Seok Jeon, Youngjin Kang, Sukhun Ham, Yong-Hoon Kim, Yung-Bin Chung and Tae-Jun Ha","doi":"10.1039/D4TC03560G","DOIUrl":"https://doi.org/10.1039/D4TC03560G","url":null,"abstract":"<p >Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium–gallium–zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm<small>²</small> V<small>⁻¹</small> s<small>⁻¹</small>, on/off ratio of 3.8 × 10<small>⁸</small>, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec<small>⁻¹</small>. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol–gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s<small>⁻¹</small>, respectively) compared with those of the sol–gel-based IGZO TFT (65 meV and 2000 cm s<small>⁻¹</small>) and sputter-based IGZO TFT (37 meV and 4000 cm s<small>⁻¹</small>), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19071-19077"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced electrical properties of lead-free sodium potassium niobate piezoelectric ceramics prepared via cold sintering assisted sintering†","authors":"Yao Huang, Xinyue Song, Renbing Sun, Hai Jiang, Peng Du and Laihui Luo","doi":"10.1039/D4TC04031G","DOIUrl":"https://doi.org/10.1039/D4TC04031G","url":null,"abstract":"<p >It is a great challenge to prepare dense (K,Na)NbO<small>₃</small> (KNN)-based ceramics with low volatilization of K<small>⁺</small>/Na<small>⁺</small> ions utilizing a conventional solid state reaction method. Herein, ternary KNNS–BNZS–BZ ceramics were prepared utilizing the conventional solid state reaction sintering (CS) method and the cold sintering-assisted sintering (CSAS) process. The CSAS process was used to prepare discs using KMnO<small>₄</small> solution as a transient melt and held at 225 °C under a uniaxial pressure of 380 MPa for 30 min. The microstructures and piezoelectric properties of the prepared ceramics were investigated. The density and piezoelectric performances of the ceramics prepared <em>via</em> CSAS are much superior to those of the counterparts by the conventional solid-state reaction. The piezoelectric constant <em>d</em><small>₃₃</small> of the CSAS ceramic with strong ferroelectric properties reaches a high value of ∼470 pC N<small>⁻¹</small>. The XRD Rietveld refinement, dielectric–temperature curves and TEM show that the prepared KNNS–BNZS–BZ ceramics have a state of three-phase rhombohedral–orthorhombic–tetragonal (R–O–T) coexistence at room temperature. The enhanced piezoelectric properties of the CSAS ceramics are ascribed to the improved densification and reduced volatilization of K<small>⁺</small>/Na<small>⁺</small> ions by the strategy of CSAS. The present investigation shows that the CSAS method is a potential route for the preparation of KNN-based ceramics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 93-102"},"PeriodicalIF":5.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manipulation of electrical performance in Al-based Josephson junctions via oxygen vacancies in barrier†","authors":"Junling Qiu, Shuya Wang, Huihui Sun, Chuanbing Han and Zheng Shan","doi":"10.1039/D4TC03574G","DOIUrl":"https://doi.org/10.1039/D4TC03574G","url":null,"abstract":"<p >Defects in the Al-based Josephson junctions, particularly oxygen vacancy (OV) defects in the barrier, are key determinants for the performance of superconducting qubits, directly limiting the coherence time. However, the effects of OVs with different positions and distributions in the barrier on the performance of Josephson junctions (JJs) remain unclear. Here, we reveal that the electronic structures and transport properties of Al/AlO<small>_<em>X</em></small>/Al JJs are highly dependent on the positions of OVs in the barrier by developing JJ models incorporating different positions, distributions, and numbers of OVs. The OVs in the barrier contribute to improving the conductance of the device. This can be attributed to the fact that the Coulomb repulsion among Al ions in proximity to OVs induces electron delocalization, thereby altering the local density of states in the barrier. Specifically, different positions of OVs can cause variations in electrical properties by several orders of magnitude, when maintaining a fixed number and distribution of OVs. Moreover, the distribution and number of vacancies also affect the electrical properties of JJ to some extent. These results provide theoretical guidance for the study of the microscopic mechanism of JJ with defects, indicating a promising potential for manipulating the performance of JJs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19063-19070"},"PeriodicalIF":5.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}