Journal of Materials Chemistry C最新文献

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Sulfur-based ferroelectric nematic liquid crystals 硫基铁电向列液晶
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-11 DOI: 10.1039/d4tc02851a
Yuki Arakawa, Qiong Ning, Subramani Karthick, Satoshi Aya
{"title":"Sulfur-based ferroelectric nematic liquid crystals","authors":"Yuki Arakawa, Qiong Ning, Subramani Karthick, Satoshi Aya","doi":"10.1039/d4tc02851a","DOIUrl":"https://doi.org/10.1039/d4tc02851a","url":null,"abstract":"We report a structure–property relationship in sulfur-based chemical structures for thermotropic ferroelectric nematic (N<small><sub>F</sub></small>) materials. We synthesized a wide variety of sulfur-containing thioether-, thioester-, and thiophene-based analogs and their oxygen-based counterparts of an archetypal ferroelectric nematogen <strong>RM734</strong>. Compound <strong>2</strong>, having the 4-terminal methylthio (SMe) group instead of the methoxy (OMe) group of <strong>RM734</strong>, shows the nematic (N), unknown N (N<small><sub>X</sub></small>), and N<small><sub>F</sub></small> phases upon cooling. In contrast, <strong>6</strong> with SMe at the inner lateral 2-position only exhibts a monotropic N phase. A thioester analog <strong>7</strong> exhibits the N and N<small><sub>F</sub></small> phases. Without the 4-terminal OMe, <strong>10</strong> having SMe at the lateral 3-position shows the enantiotropic N and monotropic N<small><sub>X</sub></small> phases, whereas <strong>12</strong> and <strong>13</strong> with SMe and OMe, respectively, at the 2-position form the monotropic N<small><sub>F</sub></small> phase directly from the isotropic (Iso) phase. In addition, thiophene-besed compounds (<strong>14</strong>, <strong>15</strong>, <strong>18</strong>, and <strong>19</strong>) exhibit the N<small><sub>F</sub></small> phase (and N<small><sub>X</sub></small> phase for <strong>14</strong> and <strong>15</strong>) regardless of the presence of the terminal chain groups. The N<small><sub>F</sub></small> phases of <strong>18</strong> and <strong>19</strong> with OMe at the inner 3-position and no chain group, respectively, directly appear from the Iso phase. Compounds <strong>20</strong> and <strong>21</strong> with the ester direction opposite from <strong>RM734</strong> only show enantiotropic N phases. The ferroelectric nature is characterized by dielectric measurement, second harmonic generation, and spontaneous polarization analysis.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems 基于氮化硅的光电突触器件:增强未来的认知计算系统
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-11 DOI: 10.1039/d4tc02992e
Hyogeun Park, Sungjun Kim
{"title":"SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems","authors":"Hyogeun Park, Sungjun Kim","doi":"10.1039/d4tc02992e","DOIUrl":"https://doi.org/10.1039/d4tc02992e","url":null,"abstract":"In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weakened charge trapping at the electrode/active layer interface in a bulk heterojunction-based organic phototransistor for quick photomultiplication 用于快速光电倍增的体异质结有机光电晶体管中电极/活性层界面的弱电荷捕获
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc02177k
Chaoran Liu, Shicheng Xiong, Di Sun, Zengqi Xie, Linlin Liu
{"title":"Weakened charge trapping at the electrode/active layer interface in a bulk heterojunction-based organic phototransistor for quick photomultiplication","authors":"Chaoran Liu, Shicheng Xiong, Di Sun, Zengqi Xie, Linlin Liu","doi":"10.1039/d4tc02177k","DOIUrl":"https://doi.org/10.1039/d4tc02177k","url":null,"abstract":"Charge trapping and release have a significant impact on the performance of organic phototransistors (OPTs), especially for the balance of response time and photomultiplication. These processes are usually present near the interface with different energy levels or mobilities. In this paper, charge trapping and release properties at the electrode/active layer interface in PDPPBTT:PC<small><sub>61</sub></small>BM based organic phototransistors have been discussed in detail. We compared the effect of interfacial charge trapping at a Ag or Au electrode on the photodetection performance of OPTs in the absence and presence of acceptors. When acceptors were added to form a bulk heterojunction as the active layer, it was fascinating to observe that not only did the BHJ with a smaller energy level difference become the main charge trap sites, but also the charge trap near the electrode was evidentially weakened and easy to release, which is supported by the turn-on voltage drift (Δ<em>V</em><small><sub>on</sub></small>), contact resistance (<em>R</em>) change and accelerated response time. This originated from acceptor-assisted carrier recombination near the metal electrode. The results show that BHJ based phototransistors are good candidates for quick photomultiplication photodetectors.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A neural compact model based on transfer learning for organic FETs with Gaussian disorder 基于高斯无序有机场效应晶体管迁移学习的神经紧凑模型
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc01224k
Minsun Cho, Marin Franot, O-Joun Lee, Sungyeop Jung
{"title":"A neural compact model based on transfer learning for organic FETs with Gaussian disorder","authors":"Minsun Cho, Marin Franot, O-Joun Lee, Sungyeop Jung","doi":"10.1039/d4tc01224k","DOIUrl":"https://doi.org/10.1039/d4tc01224k","url":null,"abstract":"We present an approach to adopt deep neural networks for the development of a compact model for transistors, namely a neural compact model, including transfer learning to enhance accuracy and reduce model development time. We examine the effectiveness of this approach when the electrical data for neural networks is scarce and costly and when the electrical characteristics to be modeled are highly non-linear. By using technology computer-aided design simulations, we constructed a dataset of the electrical characteristics of organic field-effect transistors with Gaussian disorder that exhibit highly non-linear current–voltage curves. Subsequently, we developed neural compact models by modifying conventional deep learning models and validated the effectiveness of transfer learning with testing through various experiments. We showed that the neural compact model with transfer learning provides an equivalent accuracy at a significantly shorter training time.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing the stability of zinc-ion batteries with titanium-doped VO2 cathode materials 用掺钛 VO2 阴极材料提高锌离子电池的稳定性
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc02864c
Shuling Liu, Wenhao Zhang, Jiale Guo, Zixiang Zhou, Yue Wang, Yulu Yang
{"title":"Enhancing the stability of zinc-ion batteries with titanium-doped VO2 cathode materials","authors":"Shuling Liu, Wenhao Zhang, Jiale Guo, Zixiang Zhou, Yue Wang, Yulu Yang","doi":"10.1039/d4tc02864c","DOIUrl":"https://doi.org/10.1039/d4tc02864c","url":null,"abstract":"Vanadium-based oxides, due to their large specific capacity and relatively stable crystal structures, are one of the promising candidates as cathode materials for aqueous zinc-ion batteries (ZIBs). However, their low electronic conductivity and sluggish kinetics of electrochemical reactions severely hinder their practical applications. Herein, Ti<small><sup>4+</sup></small>-doped VO<small><sub>2</sub></small>(B) materials have been synthesized by a hydrothermal method and utilized as cathode materials for aqueous ZIBs. The incorporation of Ti<small><sup>4+</sup></small> alters the crystal nucleation mechanism, substantially enlarges the material's specific surface area, and concurrently improves its conductivity and the diffusion coefficient of Zn<small><sup>2+</sup></small>. Ti–VO<small><sub>2</sub></small> demonstrates a specific capacity of 443.7 mA h g<small><sup>−1</sup></small> at 0.1 A g<small><sup>−1</sup></small> and retains a reversible capacity of 161.5 mA h g<small><sup>−1</sup></small> after 1000 charge per discharge cycles beyond 10 A g<small><sup>−1</sup></small>. The utilization of <em>ex situ</em> characterization techniques confirms the Zn<small><sup>2+</sup></small>/H<small><sup>+</sup></small> co-intercalation mechanism and elucidates the irreversible structural alterations occurring in Ti–VO<small><sub>2</sub></small> during charge and discharge processes. This study provides new ideas for the application of vanadium-based materials and can provide a reference for future research and development work in the field of vanadium-based ZIBs.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-efficiency organic light-emitting diodes based on cationic iridium(III) complexes with double tridentate ligands 基于双三叉配体阳离子铱(III)配合物的高效有机发光二极管
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc03255a
Yang Kang, Sheng Ren, Zhao Zhi Ying, Tong Bi-Hai, Chen Ping, Kong Hui
{"title":"High-efficiency organic light-emitting diodes based on cationic iridium(III) complexes with double tridentate ligands","authors":"Yang Kang, Sheng Ren, Zhao Zhi Ying, Tong Bi-Hai, Chen Ping, Kong Hui","doi":"10.1039/d4tc03255a","DOIUrl":"https://doi.org/10.1039/d4tc03255a","url":null,"abstract":"In order to improve the device performance of ionic Ir(<small>III</small>) complexes, multi dentate ligands were used to enhance the rigidity and stability of ionic Ir(<small>III</small>) complexes. Therefore, five cationic Ir(<small>III</small>) complexes with tridentate ligands were prepared. The decomposition temperatures (5% weight loss) of these complexes are between 290 and 441 °C. In polymethyl methacrylate films, these complexes show emission peaks between 488 and 537 nm with quantum efficiencies of 0.28–0.47. The density functional theory calculations indicate that the electron donating substituents on the cyclometalated benzene rings will reduce the proportion of Ir atoms in the frontier orbitals of these bis-tridentate Ir(<small>III</small>) complexes, thereby reducing their luminescence efficiency. Record-high device performance has been achieved with a superior external quantum efficiency over 17%, maximum brightness over 30 000 cd m<small><sup>−2</sup></small>, and quite small efficiency roll-off. The device efficiencies of complexes with triptycene groups only slowly decrease until 6000 cd cm<small><sup>2</sup></small>. These results demonstrate the great potential of ionic bis-tridentate Ir(<small>III</small>) complexes in state-of-the-art optoelectronic device applications.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nucleation preference and lateral growth of monolayer tin disulfide on graphene 石墨烯上单层二硫化锡的成核偏好和横向生长
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc03002h
Gaoxiang Lin, Huimin Gao, Yimei Fang, Chenyi Huang, Junjie Huang, Jie Lu, Xinrui Cao, Yufeng Zhang, Xueao Zhang, Shunqing Wu, Weiwei Cai, Yinghui Zhou
{"title":"Nucleation preference and lateral growth of monolayer tin disulfide on graphene","authors":"Gaoxiang Lin, Huimin Gao, Yimei Fang, Chenyi Huang, Junjie Huang, Jie Lu, Xinrui Cao, Yufeng Zhang, Xueao Zhang, Shunqing Wu, Weiwei Cai, Yinghui Zhou","doi":"10.1039/d4tc03002h","DOIUrl":"https://doi.org/10.1039/d4tc03002h","url":null,"abstract":"Two-dimensional (2D) heterostructures have attracted significant interest in recent years due to their novel physics and great potential in various applications. However, the achievement of controllable synthesis of large-scale 2D heterostructures remains a great challenge. Here, we demonstrate the successful van der Waals epitaxial growth of monolayer SnS<small><sub>2</sub></small> with nearly complete coverage on graphene by the method of chemical vapor deposition. The investigation reveals that the nucleation density of SnS<small><sub>2</sub></small> on graphene undergoes notable variations stemming from the presence of amorphous carbons. The lateral growth and morphology evolution of SnS<small><sub>2</sub></small> nuclei are illustrated by the theoretical studies on the adsorption and migration of precursors on graphene. On the basis of these results, an improved process is proposed to realize the uniform nucleation and high-coverage growth of SnS<small><sub>2</sub></small> monolayers. The findings offer profound insights into the growth mechanism of van der Waals epitaxy, holding significant implications for the practical utilization of two-dimensional heterostructures.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A dilute ferromagnetic ZrO2/carbon nanocomposite derived from a zirconium-based metal–organic framework for high-performance electromagnetic wave absorption 源自锆基金属有机框架的稀铁磁性 ZrO2/carbon 纳米复合材料,用于高性能电磁波吸收
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc03010a
Kun Zhang, Xiaoyu Zhao, Fengyi Zhang, Yaxin Wang, Yongjun Zhang
{"title":"A dilute ferromagnetic ZrO2/carbon nanocomposite derived from a zirconium-based metal–organic framework for high-performance electromagnetic wave absorption","authors":"Kun Zhang, Xiaoyu Zhao, Fengyi Zhang, Yaxin Wang, Yongjun Zhang","doi":"10.1039/d4tc03010a","DOIUrl":"https://doi.org/10.1039/d4tc03010a","url":null,"abstract":"Metal–organic frameworks (MOFs) have been intensively studied for electromagnetic wave absorption (EMA) due to their special structure and rich carbon and metallic sources. MOFs constructed from ferromagnetic metallic ions are frequently applied as precursors in the synthesis of MOF-based magnetoelectric composite absorbers. Considering the large population of the MOF family, the choice of only ferromagnetic metallic ions for the construction of MOF-based absorbers largely limits the broader development of MOFs. Here, a series of dilute ferromagnetic ZrO<small><sub>2</sub></small>/carbon nanocomposites have been fabricated based on a Zr-MOF (NU-1000), and their dilute ferromagnetic and dielectric properties can be readily tuned by varying the calcination temperature. The combination of dilute ferromagnetic ZrO<small><sub>2</sub></small> with suitable dielectric properties of carbon and harmonic impedance matching properties gives the ZrO<small><sub>2</sub></small>/C_700 nanocomposite with superb electromagnetic attenuation capabilities, with a minimum reflection loss (RL<small><sub>min</sub></small>) value of −59.69 dB at 2.8 mm and a maximum effective absorption bandwidth (EAB<small><sub>max</sub></small>) value of 6.44 GHz found at 2.36 mm, covering the entire Ku band. This work provides new insights into the development of non-ferromagnetic-based MOFs as magneto-dielectric coexistence absorbers. In addition, the significant potential of the ZrO<small><sub>2</sub></small>/C_700 nanocomposite as a high-performance EMA material for practical applications is further confirmed based on the results of radar cross section (RCS) simulations.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced near-infrared detection in organic phototransistors via optimized donor–acceptor single crystals 通过优化供体-受体单晶增强有机光电晶体管的近红外探测能力
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-10 DOI: 10.1039/d4tc02783c
Fengzhe Ling, Yanxun Zhang, Qianqian Du, Xialian Zheng, Qing Liu, Wenjun Wang, Shuchao Qin
{"title":"Enhanced near-infrared detection in organic phototransistors via optimized donor–acceptor single crystals","authors":"Fengzhe Ling, Yanxun Zhang, Qianqian Du, Xialian Zheng, Qing Liu, Wenjun Wang, Shuchao Qin","doi":"10.1039/d4tc02783c","DOIUrl":"https://doi.org/10.1039/d4tc02783c","url":null,"abstract":"Organic single crystals are increasingly valued in organic phototransistors (OPTs) for their tunable properties and exceptional charge transport capabilities. However, their high exciton binding energy significantly limits dissociation efficiency. In this study, we successfully fabricated a high-performance near-infrared (NIR) CuPc OPT using PTCDA molecular doping, where CuPc acts as an electron donor matrix and PTCDA serves as an acceptor. Introducing PTCDA significantly enhances exciton dissociation, attributed to the numerous donor/acceptor interfacial barriers and the substantial energy level offset between CuPc and PTCDA. We found that a donor-to-acceptor ratio of 2 : 1 exhibits the optimal device performance, achieving a NIR responsivity of 500 A W<small><sup>−1</sup></small> at 850 nm and a response speed of 135 μs, far outperforming the isolated CuPc single crystal device. These results highlight the potential of molecular doping strategies for fabricating high-performance OPTs and provide insights for designing and optimizing organic single-crystal semiconductors (OSCSs) for advanced optoelectronic applications.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stability enhancement of an Mn4+-activated germanate phosphor by a cationic non-equivalent substitution strategy 通过阳离子非等价置换策略提高 Mn4+ 激活的锗酸盐荧光粉的热稳定性
IF 7.393 2区 材料科学
Journal of Materials Chemistry C Pub Date : 2024-09-09 DOI: 10.1039/d4tc02903h
Huancheng Wu, Bohua Zhang, Xikun Zou, Maxim S. Molokeev, Xuejie Zhang, Ziyi Wang, Xiaoyu Shuang, Haoran Zhang
{"title":"Thermal stability enhancement of an Mn4+-activated germanate phosphor by a cationic non-equivalent substitution strategy","authors":"Huancheng Wu, Bohua Zhang, Xikun Zou, Maxim S. Molokeev, Xuejie Zhang, Ziyi Wang, Xiaoyu Shuang, Haoran Zhang","doi":"10.1039/d4tc02903h","DOIUrl":"https://doi.org/10.1039/d4tc02903h","url":null,"abstract":"Mn<small><sup>4+</sup></small>-activated red-emitting materials have garnered significant attention as a research focus due to their potential in enhancing plant growth. Nonetheless, the creation of thermally stable and high-efficiency red phosphors poses a major challenge, particularly for commercial use. In this research, we utilized a cationic substitution strategy to refine the Mn<small><sup>4+</sup></small> doped germanate phosphor. By replacing Mg<small><sup>2+</sup></small> ions with Sc<small><sup>3+</sup></small> ions in the Mg<small><sub>14−<em>x</em></sub></small>Sc<small><sub><em>x</em></sub></small>Ge<small><sub>5</sub></small>O<small><sub>24</sub></small>:Mn<small><sup>4+</sup></small> (MSGO:Mn<small><sup>4+</sup></small>) phosphor, the emission intensity at room temperature was nearly doubled compared to the non-substituted sample. This enhancement is ascribed to the resonance-enhanced emission effect resulting from lattice distortion. The incorporation of Sc<small><sup>3+</sup></small> ions also led to a marked rise in the internal quantum efficiency, from 65.14% to 91.14%, and an enhancement in the external quantum efficiency from 47.27% to 70.11%. Moreover, Sc<small><sup>3+</sup></small> doping induced negative thermal quenching, as indicated by the sustained increase in the photoluminescence intensity of the Mg<small><sub>14−<em>x</em></sub></small>Sc<small><sub><em>x</em></sub></small>Ge<small><sub>5</sub></small>O<small><sub>24</sub></small>:Mn<small><sup>4+</sup></small> phosphor from 25.1 °C to 225.1 °C, which can be attributed to the introduction of defect energy levels. Ultimately, the optimized Mg<small><sub>13.75</sub></small>Sc<small><sub>0.25</sub></small>Ge<small><sub>5</sub></small>O<small><sub>24</sub></small>:0.01Mn<small><sup>4+</sup></small> phosphor was integrated with a blue LED chip to create an LED device, showcasing its application potential in the field of plant lighting.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":7.393,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142221484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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