Jiaran Xiong, Chao Li, Dong Wang, Song Gao, Yue Che, Guozheng Wu and Mingyuan Guo
{"title":"A terahertz metamaterial absorber with independently tunable absorbance and bandwidth based on BP neural network optimization","authors":"Jiaran Xiong, Chao Li, Dong Wang, Song Gao, Yue Che, Guozheng Wu and Mingyuan Guo","doi":"10.1039/D5TC01763G","DOIUrl":null,"url":null,"abstract":"<p >A broadband metamaterial absorber (MA) is proposed in this paper, whose parameters and absorption spectra are optimized and predicted by the back propagation (BP) neural network (NN). This MA realizes the independent modulation of absorbance and bandwidth using vanadium dioxide (VO<small><sub>2</sub></small>) and graphene. When the conductivity of VO<small><sub>2</sub></small> is 2 × 10<small><sup>5</sup></small> S m<small><sup>−1</sup></small> with the <em>E</em><small><sub>f</sub></small> of graphene at 1 eV, the MA can achieve more than 95% absorbance within 2.16–6.23 THz. Moreover, the absorbance modulation can be realized by temperature control with a modulation depth of 61.48%, and bandwidth modulation can be realized by voltage control with a modulation depth of 37.35%. The proposed MA allows for the modulation of both absorbance and bandwidth, addressing the limitations of modulation dimensions and presenting a new design approach for flexibly tunable MAs. Furthermore, by the use of the BP NN, the optimization of the structure can be achieved more efficiently.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 30","pages":" 15698-15706"},"PeriodicalIF":5.1000,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc01763g","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
A broadband metamaterial absorber (MA) is proposed in this paper, whose parameters and absorption spectra are optimized and predicted by the back propagation (BP) neural network (NN). This MA realizes the independent modulation of absorbance and bandwidth using vanadium dioxide (VO2) and graphene. When the conductivity of VO2 is 2 × 105 S m−1 with the Ef of graphene at 1 eV, the MA can achieve more than 95% absorbance within 2.16–6.23 THz. Moreover, the absorbance modulation can be realized by temperature control with a modulation depth of 61.48%, and bandwidth modulation can be realized by voltage control with a modulation depth of 37.35%. The proposed MA allows for the modulation of both absorbance and bandwidth, addressing the limitations of modulation dimensions and presenting a new design approach for flexibly tunable MAs. Furthermore, by the use of the BP NN, the optimization of the structure can be achieved more efficiently.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors