Journal of Materials Chemistry C最新文献

{"title":"Concurrent improvements in coercivity and corrosion resistance for Nd6Fe13Ga-reconstructed Nd–Fe–B sintered magnets†","authors":"Rui Shen, Shuainan Xu, Congyi Wang, Enxiang Yang, Xiaolian Liu, Song Fu, Weiyang Jin, Yu Pan, Lizhong Zhao, Pengfei Guan and Xuefeng Zhang","doi":"10.1039/D4TC04062G","DOIUrl":"https://doi.org/10.1039/D4TC04062G","url":null,"abstract":"<p >The grain boundary phase with the chemical composition Nd<small>₆</small>Fe<small>₁₃</small>Ga in Nd–Fe–B sintered magnets has been the subject of considerable research interest due to its role in optimizing grain boundaries; however, it also presents a novel challenge regarding corrosion behavior. In this study, the regulation mechanism of Nd<small>₆</small>Fe<small>₁₃</small>Ga grain boundary-reconstructed magnets with concurrent improvements in coercivity and anti-corrosive properties was investigated. Results indicated that the formed non-ferromagnetic Nd<small>₆</small>Fe<small>₁₃</small>Ga phase and the modified Cu-rich continuous grain boundaries after Nd<small>₆</small>Fe<small>₁₃</small>Ga reconstruction contributed to the promotion of magnetic isolation and a reduction in the corrosion potential difference with the 2 : 14 : 1 phase. The underlying mechanisms of the corrosion behavior were further elucidated through <em>in situ</em> microstructural characterization and first-principles calculations of electron work functions for different phases. This study proposes an effective solution to enhance the magnetic properties and anti-corrosion simultaneously in Nd–Fe–B sintered magnets.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 373-384"},"PeriodicalIF":5.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel broadband near-infrared phosphor Na3Mg4LiSi12O30:Cr3+: moderate synthesis and application†","authors":"Zhenwei Jia, Xiaohui Zhao, Jingyi Gao, Tongqing Sun, Li Wu, Yongfa Kong and Jingjun Xu","doi":"10.1039/D4TC04175E","DOIUrl":"https://doi.org/10.1039/D4TC04175E","url":null,"abstract":"<p >Broadband near-infrared (NIR) phosphors are the key for the preparation of NIR phosphor-converted light-emitting diodes (pc-LEDs), which have great application potential in night vision, medical diagnosis, bioimaging, and food quality analysis. Silicate based NIR phosphors have received wide attention due to their excellent thermal stability, while facing the challenge of being synthesized over 1000 °C. In this study, a novel NIR phosphor Na<small>₃</small>Mg<small>₄</small>LiSi<small>₁₂</small>O<small>₃₀</small>:Cr<small>³⁺</small> (NMLS:Cr<small>³⁺</small>) has been successfully synthesized at 600 °C, and a strong electro-phono coupling effect of Cr<small>³⁺</small> is proved to ensure its broad NIR emission peaking at 785 nm with a full width at half maximum (FWHM) of ∼118 nm. The prepared NIR phosphor is fabricated into a NIR pc-LED, which shows application potential in organizational penetration and night vision. Based on the characteristic absorption of alcohol around 900 nm, a portable NIR detector is designed for alcohol detection. This study provides a suitable low-temperature synthesized host for Cr<small>³⁺</small> doped broadband NIR phosphors and new ideas for exploring advanced applications of NIR luminescent materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 385-392"},"PeriodicalIF":5.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lightweight flexible self-powered photo-supercapacitors with good stability through photoelectrochemical deposition of tellurium on PPy–V2O5 films as a new visible light active dual photoelectrode†","authors":"Mohamad Mohsen Momeni, Hossein Mohammadzadeh Aydisheh, Byeong-Kyu Lee and Ali Naderi","doi":"10.1039/D4TC03090G","DOIUrl":"https://doi.org/10.1039/D4TC03090G","url":null,"abstract":"&lt;p &gt;In this research, electrodeposition and photo-electrodeposition methods have been used to prepare some tellurium (Te)/polypyrrole (PPy)–vanadium oxide (V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt;) multi-layer films on flexible indium tin oxide electrodes, as photo-responsive supercapacitor electrodes. Tellurium, which is the major light-absorbing part, has a narrow bandgap well matching the visible light wavelength. However, PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt; is bifunctional and acts in both photoelectric conversion and energy storage. Taking advantage of the synergetic effect of the corresponding components, Te@PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt; shows high specific capacitances of 532 and 302 mF cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; at 2.0 and 2.8 mA cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; current densities, respectively, in a neutral electrolyte. In addition, areal capacitance has been measured in the dark and under light illumination. The areal capacitance of the Te@PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt; electrode increases from 412 to 532 mF cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; under light irradiation at 2.0 mA cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt;, which is 3.5, 3.7, and 4.1 times larger than the corresponding values for PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt;, Te–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt;, and Te–PPy electrodes, respectively, under identical conditions. This indicates the considerable enhancement of light-induced capacitance. Furthermore, the charge generation and storage mechanism under light irradiation have been verified by phototransient response and open-circuit potential measurements. The Te@PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt; electrode shows the highest photocurrent and photovoltage, which shows its outstanding photosensitivity. Contributions by diffusion and non-diffusion-controlled capacitance have been calculated and the results have been discussed considering different sweep rate ranges. A flexible photoresponsive symmetrical supercapacitor based on Te@PPy–V&lt;small&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;/small&gt;O&lt;small&gt;&lt;sub&gt;5&lt;/sub&gt;&lt;/small&gt; electrodes and a PVA–LiCl polymer gel electrolyte have been prepared to study the enhancement of the capacitance under visible light illumination. Areal-specific capacitances of 131 and 45 mF cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; were shown by this flexible solid-state photosupercapacitor (FSSPC) at 1.0 and 3.0 mA cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; current densities, respectively. This indicates great capacitance gain under light illumination (65% at 3.0 mA cm&lt;small&gt;&lt;sup&gt;−2&lt;/sup&gt;&lt;/small&gt; current density) and superior retention of capacitance (93% over 12 000 cycles). High capacitance retention and specific capacitance are shown by the FSSPC device, which is suitable for different bending angles in a wide range of temperatures from −10 to 50 °C. The favorable capacitance retention (∼98%) in the be","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 430-444"},"PeriodicalIF":5.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting the light-driven pyroelectric response of poly(vinylidene difluoride) by constructing Mn-doped BZT-BCT/PVDF composites†","authors":"Lu Wang, Feilong Yan, Jifeng Pan, Xiang He, Chen Chen, Muzaffar Ahmad Boda and Zhiguo Yi","doi":"10.1039/D4TC02514H","DOIUrl":"https://doi.org/10.1039/D4TC02514H","url":null,"abstract":"<p >Poly(vinylidene difluoride) (PVDF) with lightweight and mechanically flexible features is prevalently used in designing pyroelectric photodetectors. However, the generated electrical signals are often limited by its low pyroelectric coefficient. In this work, Mn-doped BZT-BCT (BZTM<small>_0.12</small>-BCT) particles with a narrow bandgap and a high pyroelectric coefficient are introduced into a PVDF film to enhance its photo-pyroelectric response. The addition of BZTM<small>_0.12</small>-BCT positively impacts the content of the electroactive phase, crystallinity and photothermal conversion capability. These factors jointly enhance the photo-pyroelectric response. The PVDF composite film with a BZTM<small>_0.12</small>-BCT content of 10 wt% presents an optimal photo-pyroelectric current, about 30 times higher than that of the pure PVDF film. Besides, the composite film shows excellent visible response from 365 nm to 660 nm light zones and superior maintenance over 71% under great bending conditions and almost 100% under repeated periodic illuminations after 100 cycles. Furthermore, it is easy to control the amplitude and waveform of the output signals simply by regulating the frequency of the periodic illuminations, showing critical potential in the complex and changeable environments. This work provides a simple strategy to improve the photo-pyroelectric output of the PVDF film, making it a potential candidate for future self-powered applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 393-402"},"PeriodicalIF":5.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d4tc02514h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Stimuli-responsive chiral aggregation-induced emission luminogens and their circularly polarized luminescence","authors":"Junhao Liang, Shiwei Fu, Qi Wu, Pengbo Wang, Xiaoqing Liu, Lei Wang and Yi Liu","doi":"10.1039/D4TC90184C","DOIUrl":"https://doi.org/10.1039/D4TC90184C","url":null,"abstract":"<p >Correction for ‘Stimuli-responsive chiral aggregation-induced emission luminogens and their circularly polarized luminescence’ by Junhao Liang <em>et al.</em>, <em>J. Mater. Chem. C</em>, 2024, https://doi.org/10.1039/d4tc03259d.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19308-19308"},"PeriodicalIF":5.7,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc90184c?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142778053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High stability modified CsPb(ClBr)3@glass@PS for wide color gamut mini-LED backlight displays†","authors":"Enrou Mei, Jiapeng Yang, Yanling Lin, Zhaoping Chen, Xiaojuan Liang and Weidong Xiang","doi":"10.1039/D4TC03904A","DOIUrl":"https://doi.org/10.1039/D4TC03904A","url":null,"abstract":"<p >Perovskite quantum dots (QDs) were considered as a new generation of emitters for lighting and displays due to their high photoluminescence (PL) efficiency and pure color. However, their commercialization process was currently hampered by stability issues and challenges in mass production. Amorphous glass-protected CsPbX<small>₃</small> perovskite nanocrystals (PNCs) have ultra-pure green light emission and excellent long-term stability. This work demonstrated that CsPb(Cl/Br)<small>₃</small>@glass PNCs were successfully deposited in germane–silicate glass, and CsPbBr<small>₃</small>@glass had bright green luminescence under ultraviolet irradiation, a narrow half-peak width (FWHM) and a high photoluminescence quantum yield (PLQY, 91.5%). The color gamut of the prepared WLED almost covered 123% of the NTSC 1953 standard and 91.8% of the Rec 2020 standard. It was proposed that a one-step mixed pressure film forming method using perovskite glass materials and PS materials can successfully obtain a high-quality, high-luminescence light conversion film, which can accelerate the commercialization of PQDs in display and lighting industries.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 356-364"},"PeriodicalIF":5.7,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An esophagus-inspired magnetic-driven soft robot for directional transport of objects†","authors":"Shanfei Zhang, Qi Wang, Zhuofan Li, Yizhuo Xu and Bin Su","doi":"10.1039/D4TC03075C","DOIUrl":"https://doi.org/10.1039/D4TC03075C","url":null,"abstract":"<p >Magnetic-controlled soft robots, owing to their advantages such as non-contact manipulation, flexible control, and rapid deformability, have experienced rapid development and widespread application. However, most of the existing magnetically driven soft robots are solid or two-dimensional planar structures, which can only achieve shape deformation such as bending, twisting, and stretching. So far as we know, hollow magnetically driven soft robots that can transport objects inside themselves continuously have rarely been reported. Inspired by the swallowing of the biological esophagus, this study introduces a magnetic esophagus-inspired soft robot (MESR) featuring a hollow corrugated tube structure that can transport objects in an on-demand way. The MESR incorporates a unique N–S magnetic pole distribution, endowing it with excellent self-contraction and deformation capabilities under the influence of a magnetic field. The distinctive hollow corrugated tube structure and magnetic-controlled contraction abilities enable the MESR to achieve object transport in both horizontal and vertical anti-gravity directions under external magnetic fields, with transportation speeds of 6.4 mm s<small>⁻¹</small> and 5.2 mm s<small>⁻¹</small>, respectively. Abaqus numerical simulations further elucidated the magnetic-driven deformation mechanism of the MESR. Optimization of material properties and structural parameters was conducted to enhance MESR's object transport capabilities. Lastly, combining MESR's horizontal transport and vertical anti-gravity transport abilities, this study designed an on-demand object transport mechanism. The research provides an effective approach for achieving contraction deformation and material transport in magnetic-controlled soft robots, thereby expanding the functionality and application domains of such robotic systems.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 250-259"},"PeriodicalIF":5.7,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory†","authors":"Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn and Sanghun Jeon","doi":"10.1039/D4TC02460E","DOIUrl":"https://doi.org/10.1039/D4TC02460E","url":null,"abstract":"<p >Ferroelectric materials, characterized by their polarization switching capabilities, have emerged as promising candidates for non-volatile memory applications due to their fast operation speeds, low switching energies, and remarkable scalability. Among these, hafnia-based ferroelectrics are particularly noted for their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the development of high-quality ferroelectricity in ultra-thin films, essential for low-voltage operations and high-density integrations, remains challenging. This study introduces a novel low-damage metallization process designed to fabricate ultra-thin (sub-5 nm) ferroelectric films exhibiting exceptional ferroelectric properties and reliability. The process, compatible with standard CMOS techniques, achieves a significant remnant polarization (<em>P</em><small>_r</small>) of 40 µC cm<small>⁻²</small> and low leakage currents, alongside enhanced retention characteristics. Crucially, it substantially mitigates the wake-up effect, often attributed to oxygen vacancy redistribution at the interface. Through comprehensive analyses utilizing electron energy loss spectroscopy (EELS), geometric phase analysis (GPA) and X-ray photoelectron spectroscopy (XPS), we demonstrate that our process effectively reduces oxygen vacancies and dislocations at the top interface of the ferroelectric film. The enhanced reliability of ferroelectric random-access memory (FeRAM), evidenced by improved sensing margins and consistency in ferroelectric properties, marks a substantial improvement over the conventional method. To precisely measure reliability characteristics, we propose a new retention model that considers charge screening over time. Moreover, circuit-level simulations <em>via</em> non-volatile memory simulator (NVSim) validate the process's integration potential with existing CMOS technologies, affirming its suitability for advanced, high-density memory configurations without compromising performance or energy efficiency. The findings from this study pave the way for broader applications of nanoscale high-quality dielectric thin films, extending beyond ferroelectric materials to various technological domains requiring advanced material solutions.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 214-229"},"PeriodicalIF":5.7,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in cross-linkable organic hole-transporting materials for perovskite optoelectronics","authors":"Xiaoxiao Yang, Xin Luo, Yuxiao Guo, Dan Zhao, Esmaeil Sheibani and Bo Xu","doi":"10.1039/D4TC04111A","DOIUrl":"https://doi.org/10.1039/D4TC04111A","url":null,"abstract":"<p >Metal halide perovskites have emerged as promising semiconductors for next-generation optoelectronics, particularly due to their solution processability and exceptional semiconductor properties. Over the past few decades, the performance of perovskite-based solar cells (PSCs) and light-emitting diodes (PeLEDs) has seen rapid improvements. However, the operational stability of these perovskite optoelectronic devices remains a significant challenge. One critical factor influencing both efficiency and stability is the choice of hole-transporting materials (HTMs). Recently, there has been a growing focus on cross-linkable HTMs as a means to enhance device stability. This review systematically summarizes the role of cross-linkable HTMs in PSCs and PeLEDs, emphasizing their material advantages, design principles, physical properties, and advancements in device performance. Special attention is given to the impact of cross-linkable HTMs on device interfaces and overall stability. We conclude by discussing the future challenges that must be addressed to further advance the application of cross-linkable HTMs in both PSCs and PeLEDs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 18952-18971"},"PeriodicalIF":5.7,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revealing the effect of conductive mechanism on the voltage endurance of ferroelectric thin films via controlling the deposition temperature for reaching high energy storage capability†","authors":"Hongmei Jing, Shibo Zhao, Ting Wang, Wanbiao Hu, Liming Diwu, Jingru Xu, Peiqiao Han, Miao Liu, Zhuo Wang and Zixiong Sun","doi":"10.1039/D4TC03879G","DOIUrl":"https://doi.org/10.1039/D4TC03879G","url":null,"abstract":"<p >Dielectric capacitors are considered superior to Li-ion batteries for replacing conventional internal combustion engines because they have no drawbacks of long charging times. Compared to the material's state of bulk ceramics and flexible composite films, dielectric capacitors in the form of thin films offer greater flexibility for regulation beyond domain and interface engineering. In this work, we grew 0.75Ba<small>_0.15</small>Ca<small>_0.85</small>Zr<small>_0.1</small>Ti<small>_0.9</small>O<small>₃</small>–0.15Bi(Zn<small>_2/3</small>Ta<small>_1/3</small>)O<small>₃</small> (BCZT–BZT) thin films on 100 nm SrRuO<small>₃</small>(SRO)-coated (001)-STO substrates at various deposition temperatures. Due to lattice mismatch, all films consist of a strained layer and a relaxed layer, with varying proportions, and the strained layer is considered to degrade the voltage endurance of the thin films. The <em>J</em>–<em>E</em> curve results indicate a conduction mechanism transition from Schottky emission to Ohmic contact, with the formation of a depletion layer, which is higher in resistivity, at the bottom of BCZT–BZT60 and BCZT–BZT65. Considering a phase evolution from T-phase to O-phase from the bottom up, directly observed in the TEM images, electric field redistribution with voltage endurance was thought to occur in these two thin films, which is confirmed by the mathematical derivation. The synergistic effects of the variation between the strained and relaxed layers, along with the transitions in the conduction mechanism, result in BCZT–BZT65 achieving the highest breakdown strength (<em>E</em><small>_b</small>) of 7.01 MV cm<small>⁻¹</small> and a recoverable energy density (<em>W</em><small>_rec</small>) of 101.79 J cm<small>⁻³</small>. Additionally, BCZT–BZT65 demonstrates high reliability in harsh environments and excellent discharge performance with a discharge time (<em>t</em><small>_0.9</small>) of only 0.45 μs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 45","pages":" 18256-18263"},"PeriodicalIF":5.7,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}