Journal of Materials Chemistry C最新文献_第4页

High-performance photoelectric and self-powered properties of a p–n GaSe/SnS2 heterojunction by a built-in electric field 内置电场对p-n GaSe/SnS2异质结的高性能光电和自供电特性的影响

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-16 DOI: 10.1039/D5TC02357B

Dongxiang Li, Ruiqin Li and Yongting Zhao

{"title":"High-performance photoelectric and self-powered properties of a p–n GaSe/SnS2 heterojunction by a built-in electric field","authors":"Dongxiang Li, Ruiqin Li and Yongting Zhao","doi":"10.1039/D5TC02357B","DOIUrl":"https://doi.org/10.1039/D5TC02357B","url":null,"abstract":"The advancement and exploration of multifunctional, self-powered devices are significantly enhanced by the van der Waals (vdW) heterojunctions formed between two-dimensional (2D) materials. In this work, a GaSe/SnS2 heterojunction was constructed using a GaSe monolayer and SnS2 monolayer. The GaSe/SnS2 heterojunction exhibited a steady structure and type-II arrangement. The presence of potential drop (EP) in the heterojunction drives the formation with a built-in electric field, resulting in the ability to operate without the need for bias voltage and attainment of self-powered performance. The GaSe/SnS2 heterojunction exhibited enhanced photoresponsivity in the ultraviolet region compared to a single material. The GaSe/SnS2 heterojunction also achieved a maximum photocurrent of 3.9 a02 per photon, and the measured extinction ratio was 38.3 at photon energies of 4.1 eV and 3.2 eV, respectively. In addition, vertical and biaxial strains played a crucial role in influencing the band structures and optoelectronic characteristics of the GaSe/SnS2 heterojunction. We verified the experimentally discovered p–n type heterojunction, explained the high performance of GaSe/SnS2, and theoretically analyzed the self-powered capability and the modulation effect of strain on the GaSe/SnS2 heterojunction. This work provides insights into the self-powered properties and strain modulation in 2D vdW heterojunctions and contributes to the development of multifunctional optoelectronic devices.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20690-20698"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of heat treatment on the martensite phase and magnetic properties of chemically synthesized Co2NiGa nanoparticles 热处理对化学合成的Co2NiGa纳米颗粒马氏体相及磁性能的影响

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-16 DOI: 10.1039/D5TC02431E

Debraj Mahata and Ananthakrishnan Srinivasan

{"title":"Effect of heat treatment on the martensite phase and magnetic properties of chemically synthesized Co2NiGa nanoparticles","authors":"Debraj Mahata and Ananthakrishnan Srinivasan","doi":"10.1039/D5TC02431E","DOIUrl":"https://doi.org/10.1039/D5TC02431E","url":null,"abstract":"To achieve the martensite (M) phase at room temperature, chemically synthesized polycrystalline Co2NiGa nanoparticles (NPs) with a preponderance of the austenite (A) phase were reheated at different temperatures. Heat treatment at 1373 K led to a single M phase structure in stoichiometric Co2NiGa nanoparticles with excellent magnetic and shape memory properties. Room-temperature single M phase NPs transformed completely into the A phase when heated to 723 K, confirming the martensitic transition in Co2NiGa NPs. The synthesized NPs displayed a soft ferromagnetic nature with magnetic moment at 40 kOe under an applied field (Msat) ranging from 35.1 emu g−1 to 40.4 emu g−1 at 5 K and from 13.0 to 26.4 emu g−1 at 300 K. The Curie temperatures of the M and A phases were 350 ± 2 K and 896 ± 2 K, respectively. The analysis of the magnetic properties revealed the presence of a dead layer with a thickness of ≈1.67 nm and the single-domain nature of the M phase Co2NiGa NPs. By carefully selecting post-synthesis heat treatment conditions, the M ↔ A phase transition temperature and magnetic properties of Co2NiGa NPs can be tailored to suit potential nanoactuator applications.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20645-20653"},"PeriodicalIF":5.1,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and application of isoindigo quaternary ammonium salts in copper plating 异靛蓝季铵盐的合成及其在镀铜中的应用

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-16 DOI: 10.1039/D5TC01743B

Ruiqi Shan, Chenhao Qian, Xuyang Li, Xin Chen and Limin Wang

引用次数: 0

Prediction of high-temperature superconductivity in LaH4 at low pressures 低压下LaH4高温超导性的预测

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-15 DOI: 10.1039/D5TC02600H

Christopher Renskers, Catalin D. Spataru, Marios Zacharias, Sakun Duwal, Timothy Elmslie, Peter A. Sharma and Elena R. Margine

{"title":"Prediction of high-temperature superconductivity in LaH4 at low pressures","authors":"Christopher Renskers, Catalin D. Spataru, Marios Zacharias, Sakun Duwal, Timothy Elmslie, Peter A. Sharma and Elena R. Margine","doi":"10.1039/D5TC02600H","DOIUrl":"https://doi.org/10.1039/D5TC02600H","url":null,"abstract":"Superconducting hydrides have received significant attention in the last decade due to their potential for room-temperature superconductivity. However, achieving high critical temperatures (Tcs) typically requires extreme pressures exceeding 150 GPa. Recently, a new, low-pressure R<img>m-LaH4 phase was observed to form above approximately 20 GPa. Here, we perform first-principles calculations to investigate the electron–phonon interactions and superconducting properties of the new phase across a range of pressures. At the harmonic level, the system is found to be dynamically unstable, but this is remedied through the inclusion of anharmonic effects. We estimate that Tc reaches up to 115 K at 25 GPa, driven by a high density of states at the Fermi level (NF) and soft phonon modes. However, superconductivity is suppressed with increasing pressure, as Tc rapidly decreases to 34 K at 60 GPa and 11 K at 100 GPa, due to a reduction in NF and phonon hardening.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20571-20579"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02600h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Navigating the ZnO/metal phthalocyanine interface in OLEDs: challenges, perspectives, and engineering strategies 在oled中导航ZnO/金属酞菁界面：挑战、观点和工程策略

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-15 DOI: 10.1039/D5TC02786A

Sakineh Akbari Nia, Paulina Powroźnik, Mieczyslaw A. Pietrzyk and Maciej Krzywiecki

{"title":"Navigating the ZnO/metal phthalocyanine interface in OLEDs: challenges, perspectives, and engineering strategies","authors":"Sakineh Akbari Nia, Paulina Powroźnik, Mieczyslaw A. Pietrzyk and Maciej Krzywiecki","doi":"10.1039/D5TC02786A","DOIUrl":"https://doi.org/10.1039/D5TC02786A","url":null,"abstract":"The interface between inorganic charge injection/transport layers and organic functional layers is crucial for the performance and stability of organic light-emitting diodes (OLEDs), since this hybrid structure is the most strategic area in the operation of OLEDs. Zinc oxide (ZnO) as an efficient electron injection/transport layer and metal phthalocyanines (MPcs) as hole injection/transport and emission layers are individually well-established materials in OLED architectures; however, the direct integration and optimization of their interface suffer from a lack of consideration. This perspective addresses the potential challenges and opportunities associated with the ZnO/MPc interface in OLEDs. It analyzes potential issues such as work function (WF), interface morphology, chemical stability, exciton quenching, and charge trapping by seeking the related material systems and considering the electronic/structural properties of ZnO and MPcs. Additionally, we present a comprehensive view on the promising strategies for interface engineering for ZnO-based interfaces to enhance device performance, aiming to outline the potential device architectures leveraging the unique properties of the ZnO/MPc interface. Finally, we propose key future research directions to show some hidden potential of this material combination for OLED fabrication.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20463-20481"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emerging chiral molecular carbon materials for chiroptoelectronic applications 新兴手性分子碳材料的手电子应用

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-15 DOI: 10.1039/D5TC02532J

Xinyang Zhang, Xinyang Ge, Jingya You, Yipu Wang, Qiang Huang and Li Wan

{"title":"Emerging chiral molecular carbon materials for chiroptoelectronic applications","authors":"Xinyang Zhang, Xinyang Ge, Jingya You, Yipu Wang, Qiang Huang and Li Wan","doi":"10.1039/D5TC02532J","DOIUrl":"https://doi.org/10.1039/D5TC02532J","url":null,"abstract":"Chirality is a ubiquitous phenomenon in nature and continues to inspire modern materials science. Among various chiral systems, chiral carbon materials have been extensively developed, with their chirality flexibly tuned through molecular-level chemical design and further amplified by solid-state intermolecular assembly. By incorporating different functional groups, these carbon materials can be tailored to exhibit excellent light-emitting and light-absorbing properties, making their chiral forms suitable for emitting or detecting circularly polarized light. In this review, we first introduce the basic concepts of chiral materials and spectroscopic chiroptical responses, and explain how chirality is introduced into molecular carbon systems through chemical design. We then systematically summarize recent research progress in chiral optoelectronic (chiroptoelectronic) applications that incorporate chiral carbon materials. Furthermore, we analyze the dissymmetry factors of each system and offer perspectives on strategies to enhance performance. We believe that this review will attract broad attention from interdisciplinary researchers working on carbon materials, chirality science, and optoelectronics.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20444-20462"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02532j?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low bandgap conjugated polymers based on thiadiazoloquinoxaline for high performance shortwave infrared photodetection 基于噻二唑喹啉的低带隙共轭聚合物用于高性能短波红外光探测

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-15 DOI: 10.1039/D5TC02404H

Nathan Yee, Tyler Davidson-Hall, Neil Graddage, Barbara Martin, Jianying Ouyang, Philippe Berrouard and Jianping Lu

{"title":"Low bandgap conjugated polymers based on thiadiazoloquinoxaline for high performance shortwave infrared photodetection","authors":"Nathan Yee, Tyler Davidson-Hall, Neil Graddage, Barbara Martin, Jianying Ouyang, Philippe Berrouard and Jianping Lu","doi":"10.1039/D5TC02404H","DOIUrl":"https://doi.org/10.1039/D5TC02404H","url":null,"abstract":"The detection of light in the second near-infrared (NIR-II) region of the electromagnetic spectrum is critical for various applications such as bioimaging, environmental sensing and health monitoring. However, the narrow band gaps of organic semiconductors required for NIR-II photodetection increase the probability of charge injection under bias voltages and bulk thermal charge generation in the active layer, leading to a large dark current and low external quantum efficiency which results in poor detectivity. In this study, we introduce a series of low band-gap donor–acceptor type alternating conjugated polymers using thiadiazoloquinoxaline (TQ) as electron-withdrawing units and indacenodithiophene (P1 and P2) or propylenedioxythiophene as electron-donating units (P3–P5) for NIR-II photodetection. Polymers P3–P5 have much lower band gaps than P1 and P2 due to the stronger intrachain D–A interaction in the former. P3 and P5 have excellent solubility in a variety of organic solvents even at room temperature, which greatly facilitates the device fabrication process. The photodiode device based on P5 exhibited the highest specific detectivity of 2.0 × 1010 Jones at 1200 nm under −1 V bias owing to the significantly low dark current.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20760-20768"},"PeriodicalIF":5.1,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02404h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient optical photoswitching of benzyloxy-substituted TCF-based D–π–A molecules 苯氧基取代tcf基D -π-A分子的高效光开关

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-11 DOI: 10.1039/D5TC02366A

Kamila Lupinska, Kinga E. Szkaradek, Kacper Parafiniuk, Robert Góra, Piotr Fita, Yann Bretonnière, Chantal Andraud and Lech Sznitko

{"title":"Efficient optical photoswitching of benzyloxy-substituted TCF-based D–π–A molecules","authors":"Kamila Lupinska, Kinga E. Szkaradek, Kacper Parafiniuk, Robert Góra, Piotr Fita, Yann Bretonnière, Chantal Andraud and Lech Sznitko","doi":"10.1039/D5TC02366A","DOIUrl":"https://doi.org/10.1039/D5TC02366A","url":null,"abstract":"Molecules exhibiting photo-switching behavior are essential for the development of various photonic and optoelectronic devices. In this study, we report the synthesis of five novel donor–π–acceptor organic dyes, in which a stilbene moiety serves as a π-linker between the electron-donating and electron-withdrawing units. To address the challenge of developing photo-switchable molecules responsive to visible light, we performed fundamental optical characterization in both solution and solid state. The photoisomerization capability was confirmed for all compounds through real-time absorption measurements, enabling the calculation of E → Z isomerization kinetics. The presence of both isomeric forms was further validated by 1H NMR spectroscopy. These experimental findings were supported by quantum chemical calculations, which identified the most stable conformers and accurately predicted their spectral properties. Moreover, pump–probe experiments demonstrated that irradiation with linearly polarized light efficiently triggers photo-induced birefringence in dye-doped polymer systems, with a notable “memory effect” observed for all studied compounds. Remarkably, the dyes are highly sensitive to light, and the birefringence saturation can be achieved at light intensities comparable to natural daylight, highlighting their broad potential application in optoelectronic devices.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20519-20530"},"PeriodicalIF":5.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02366a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Material-engineered self-compliant memristor enabling multibit synaptic learning and in-memory computing 材料工程自适应记忆电阻器，支持多比特突触学习和内存计算

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-11 DOI: 10.1039/D5TC02402A

Minseo Noh and Sungjun Kim

{"title":"Material-engineered self-compliant memristor enabling multibit synaptic learning and in-memory computing","authors":"Minseo Noh and Sungjun Kim","doi":"10.1039/D5TC02402A","DOIUrl":"https://doi.org/10.1039/D5TC02402A","url":null,"abstract":"To improve the integration density of memristor-based crossbar arrays, we present a self-compliant RRAM device that eliminates the need for external current-limiting transistors. Additionally, an Al2O3 layer enhances switching uniformity by stabilizing the filament path, while an AlN layer acts as an oxygen barrier to improve retention. A thin SiO2 tunnel barrier is also introduced to modulate oxygen ion migration, which localized the formation of conductive filaments and significantly improved endurance by reducing cycle-to-cycle variation. This material-engineered architecture enables stable and repeatable resistive switching with low variability and high endurance. Neuromorphic characteristics were evaluated by applying pulse-based electrical stimuli to emulate biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD), and spike-timing-dependent plasticity (STDP), enabling analog synaptic weight updates. The multibit capabilities of the device were systematically investigated by modulating voltage amplitudes and applying incremental step pulse with verify algorithm (ISPVA) scheme, demonstrating reliable conductance tuning up to 8-bit resolution. Furthermore, the device was integrated into a memristor-based pattern recognition system for edge-computing-oriented neuromorphic inference, where externally controlled conductance states were used to emulate synaptic weights during digit classification. These results highlight the potential of the proposed memristor array as a scalable and energy-efficient platform for on-device learning and in-memory computing applications in edge environments.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20675-20689"},"PeriodicalIF":5.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Medium bandgap A–DA′D-A type small molecule acceptors prepared using synergetic modification strategies enable high-performance organic solar cells 采用协同修饰策略制备的中带隙A-DA 'D-A型小分子受体使高性能有机太阳能电池成为可能

IF 5.1 2区材料科学

Journal of Materials Chemistry C Pub Date : 2025-09-11 DOI: 10.1039/D5TC03087K

Yuechen Li, Yufei Gong, Xiaojun Li, Haozhe He, Shucheng Qin, Jinyuan Zhang, Jianqi Zhang, Fei Pan, Lei Meng and Yongfang Li

{"title":"Medium bandgap A–DA′D-A type small molecule acceptors prepared using synergetic modification strategies enable high-performance organic solar cells","authors":"Yuechen Li, Yufei Gong, Xiaojun Li, Haozhe He, Shucheng Qin, Jinyuan Zhang, Jianqi Zhang, Fei Pan, Lei Meng and Yongfang Li","doi":"10.1039/D5TC03087K","DOIUrl":"https://doi.org/10.1039/D5TC03087K","url":null,"abstract":"Organic solar cells (OSCs) are promising candidates for next-generation photovoltaic technologies due to their inherent advantages of light weight and mechanical flexibility. In recent years, advancements in photovoltaic materials and device fabrication technologies have driven significant improvements in the power conversion efficiency (PCE) of OSCs. Introducing medium-bandgap small molecule acceptors (SMAs) as secondary acceptors into ternary OSCs is an effective strategy to further improve the PCE of OSCs. In this study, we synthesized a series of SMAs Cl24-F, Cl24-H and Cl24-I based on Y6 by employing multiple synergistic modification strategies to expand the molecular bandgap. Among them, Cl24-F yields the highest PCE but exhibits a low open-circuit voltage (Voc), while Cl24-I suffers from excessive aggregation, leading to poor film morphology. In contrast, Cl24-H features the highest lowest unoccupied molecular orbital energy level (ELUMO) and the widest bandgap, resulting in a notably high Voc of 1.01 V in corresponding OSCs. Interaction analyses further confirmed that Cl24-H possesses excellent miscibility with both PM6 donor and BTA-E3 acceptor. Consequently, when Cl24-H was incorporated as a secondary acceptor into the PM6:BTA-E3 system, the PM6:BTA-E3:Cl24-H based ternary OSCs exhibited increased Voc and short-circuit current density (Jsc), achieving a remarkable PCE of 20.2%. This enhancement is primarily attributed to improved exciton dissociation, balanced charge transport and suppressed carrier recombination enabled by Cl24-H. This work underscores the importance of synthesizing efficient medium-bandgap acceptors and demonstrates their feasibility as third components for boosting OSCs’ performance.","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 21205-21214"},"PeriodicalIF":5.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145339756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0