Journal of Materials Chemistry C最新文献

{"title":"In situ construction of surface oxygen vacancies on N/TiO2 for promoting visible light photocatalytic H2 evolution†","authors":"Yuandong Shen, Nan Yang, Ke Wang, Bin Xiao, Yijun He, Zhishi Qiu, Tong Zhou, Weijie Zhan, Rui Hu, Genlin Zhang, Jin Zhang, Zhongqi Zhu, Feng Liu, Hao Cui and Qingju Liu","doi":"10.1039/D4TC03098B","DOIUrl":"https://doi.org/10.1039/D4TC03098B","url":null,"abstract":"<p >Realizing photocatalytic hydrogen evolution under visible light still has many challenges, especially due the contradiction between the dependence of doping on high temperature and the passivation of catalytic active sites caused by high temperature. Herein, a simple method of mixed sintering of thiourea and NH<small>₂</small>-MIL-125(Ti) was adopted to achieve both N doping and surface O<small>_v</small><em>in situ</em> construction on TiO<small>₂</small>, significantly improving the visible light catalytic hydrogen evolution performance. Experiments confirm that N doping can regulate the band structure and enhance the light absorption range of TiO<small>₂</small>, while the improvement of surface photocatalytic activity mainly depends on surface defects. Experimental and theoretical studies show that N doping regulates the electron distribution of TiO<small>₂</small> and forms a photogenerated electron transport channel, which promotes the migration of photogenerated electrons. O<small>_V</small> can capture photogenerated electrons and prolong the lifetime of electrons. The H absorption and desorption equilibrium on the catalyst surface can be optimized by O<small>_V</small> for promoting hydrogen evolution. Consequently, under irradiation of light with 365, 385, 400 and 420 nm wavelengths, the average hydrogen evolution rates of the best sample are 14 700, 4850, 720 and 87 μmol g<small>⁻¹</small> h<small>⁻¹</small>, respectively. This work provides ideas for the design and development of photocatalysts for visible light photocatalytic hydrogen evolution.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Additive-assisted molecular aggregation manipulation towards efficient thick organic solar cells†","authors":"Xueting Yi, Zekun Liu, Mengan Zhao, Minghui Huang, Jiang Wu, Yingying Fu and Zhiyuan Xie","doi":"10.1039/D4TC03060E","DOIUrl":"https://doi.org/10.1039/D4TC03060E","url":null,"abstract":"<p >Developing thickness-insensitive organic solar cells (OSCs) is of vital importance for meeting the requirements of the mass production of solar panels. Herein, the molecular aggregation behaviour of non-fullerene acceptors was manipulated <em>via</em> two different solvent additives, namely, 1-phenylnaphthalene (PN) and 1-chloronaphthalene (CN), to improve the charge transport in thick OSCs. The planar structure of the naphthalene ring coupled with large phenyl steric hindrance allows the PN additive to insert into the adjacent N3 molecules, disturbing their face-to-face π–π stacking and enhancing the J-aggregation in the blends. As a result, the PN-treated blend film exhibits red-shifted and broad absorption as well as increased charge carrier mobility, which is crucial for high-performance thick OSCs. In contrast, the CN additive, with a small side group possessing good solubility for N3 and a high boiling point, facilitates the H-type aggregation of acceptors in the spin-coating process. With the incorporation of 0.5 vol% PN, the 120-nm-thick D18-Cl:N3-based devices obtained a power conversion efficiency (PCE) over 18.0%, significantly higher than the 16.22% and 16.08% for the control and CN-treated devices, respectively. Impressively, when the active layer thickness is increased to 300 nm, the resultant device still obtained a PCE of 16.48%. This work provides a simple additive strategy to facilitate the precise control of molecular aggregation during the film formation process for high-performance thick OSCs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc03060e?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heavy metal-free colloidal quantum dots: preparation and application in infrared photodetectors","authors":"Xuegang Zhang, Ge Mu, Yongzhe Zhang, Yijian Jiang and Yinzhou Yan","doi":"10.1039/D4TC03312D","DOIUrl":"https://doi.org/10.1039/D4TC03312D","url":null,"abstract":"<p >The development of infrared photodetectors is increasingly moving towards the realization of large-scale, cost-effective integrated systems. Currently, silicon (Si), indium gallium arsenide (InGaAs), and mercury cadmium telluride (HgCdTe) dominate infrared photodetectors, but due to the ever-increasing performance requirements and the complexity of emerging application scenarios, a new generation of detector technologies is imperative. Colloidal quantum dots (CQDs), which are compatible with existing silicon-based microelectronics, with low manufacturing costs and simplified processing, are ideal alternatives. Hg- or Pb-based infrared photodetectors have been widely studied owing to their excellent performance. Nevertheless, the presence of heavy metal elements greatly limits the application scenarios of the detectors. Therefore, heavy metal-free (HMF) CQD-based infrared photodetectors solve the above problem from the source. In this work, the latest advancements in the synthesis of HMF CQDs and a brief overview of the development of HMF CQD-based infrared photodetectors are given. Within the context of this field, we summarize the possible forward-looking directions and obstacles.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142409087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Z-Scheme g-C3N4/TiO2 heterojunction for a high energy density photo-assisted Li–O2 battery†","authors":"Zhichao Xue, Yingyi Ru, Qiang Li, Xiaolong Liang, Ying Ma, Hong Sun and Ying Lv","doi":"10.1039/D4TC01832J","DOIUrl":"https://doi.org/10.1039/D4TC01832J","url":null,"abstract":"<p >A lithium–oxygen battery based on the formation of lithium oxide (Li<small>₂</small>O) can theoretically achieve a high energy density through a four-electron reaction. This is more challenging to accomplish than the one- and two-electron reactions that produce lithium superoxide (LiO<small>₂</small>) and lithium peroxide (Li<small>₂</small>O<small>₂</small>), respectively. A stable cathode with a sufficient supply of electrons and Li cations to form Li<small>₂</small>O must be developed to achieve a four-electron reaction for a lithium–oxygen battery. Herein, by utilizing a composite 3D-printed cathode composed of a g-C<small>₃</small>N<small>₄</small>/TiO<small>₂</small> (gCNTO) heterostructure nanoparticle with high porosity and high conductivity, we were able to provide ample space and numerous active/catalytic sites during the reaction process. Our findings indicate that Li<small>₂</small>O is the product of the photo-assisted lithium–oxygen battery. Under illumination, the battery can be rechargeable for over 1000 hours at 0.05 mA cm<small>⁻²</small> with a small polarization gap. The photocathode delivers an ultra-high discharge capacity of 29.7 mA h cm<small>⁻²</small> at 0.5 mA cm<small>⁻²</small>, resulting in a specific energy of approximately 515.12 W h kg<small>⁻¹</small><small>_cell</small>. The performance is superior to the battery with Li<small>₂</small>O<small>₂</small> as a discharge product in the dark. This study paves the way for the rapid development of high-energy-density photo-assisted Li–O<small>₂</small> batteries.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design strategies of rare-earth luminescent complexes with zero thermal quenching protected by the wire-in-tube structure and the construction of a W-WLED with highly stable illumination and colour reproduction†","authors":"Yunxiao Ma, Ya Li, Hui Yu, Zhijia Lv, Xin Guan, Jiabao Yu, Shuang Ma, Long Xia and Xiangting Dong","doi":"10.1039/D4TC02599G","DOIUrl":"https://doi.org/10.1039/D4TC02599G","url":null,"abstract":"<p >Efficient and low-cost lighting technologies can alleviate energy and environmental crises and help achieve the goal of “dual carbon”. Traditional cold white light is not suitable for indoor lighting as the blue light emitted damages the human eye, stimulates the nerves, and causes physical and psychological damage. Hence, the TbSSA@ZnO/SnO<small>₂</small> green phosphor with a wire-in-tube structure was constructed and mixed with commercial blue and red phosphors to assemble a warm white light emitting diode (W-WLED). The shell of ZnO/SnO<small>₂</small> can effectively protect the homemade terbium complex (TbSSA) core to resist the high operating temperature of 200 °C, and the introduction of Sn<small>⁴⁺</small> promotes the luminescence intensity. The assembled W-WLED has a related color temperature (CCT) of 2858 K, color purity (<em>R</em><small>_a</small>) of 89.8, and external quantum efficiency of 12.4%, while stable illumination is retained under the floating driving currents. The prepared W-WLED also has high color reproduction and warm white color temperature, which has important practical significance in the field of semiconductor lighting with complex working environment and high color rendering requirements.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface properties and corrosion protection study of a poly(N-ethyl-4-vinylpyridine) polyelectrolyte-based coating on an electrochemically formed Ti|TiO2 surface","authors":"Jozefina Katić, Juraj Nikolić, Tea Juračić, Tin Klačić, Danijel Namjesnik and Tajana Begović","doi":"10.1039/D4TC02777A","DOIUrl":"https://doi.org/10.1039/D4TC02777A","url":null,"abstract":"<p >In this study, the surface properties and corrosion behavior of a titanium sample modified with an electrochemically formed oxide layer (Ti|TiO<small>₂</small>) and Ti|TiO<small>₂</small> sample coated with poly(<em>N</em>-ethyl-4-vinylpyridinium) cations (PE4VP) were studied. It was shown, by means of atomic force microscopy and ellipsometry, that the Ti|TiO<small>₂</small> surface is very flat with an average roughness of only 3.4 nm and an oxide layer thickness of 16.1 nm. The inner surface potential of the Ti|TiO<small>₂</small> sample as a function of pH and concentration of sodium chloride was measured using the constructed Ti|TiO<small>₂</small> electrode. In order to improve the corrosion protective effectiveness of the surface coating, the process parameter conditions for strong poly(<em>N</em>-ethyl-4-vinylpyridinium) cation optimal adsorption on the electrochemically formed TiO<small>₂</small> oxide layer were determined using ellipsometry, tensiometry, and atomic force microscopy. The effect of adsorption of PE4VP cations on the inner surface potential and corrosion protection effectiveness of the TiO<small>₂</small> and TiO<small>₂</small>-PE4VP coatings was examined. The electrochemical behaviour and corrosion properties of an unmodified titanium surface, titanium surface modified with an electrochemically formed TiO<small>₂</small> and subsequently modified with a PE4VP polyelectrolyte-based coating were examined by means of electrochemical impedance spectroscopy. Increased polarization resistance values and high corrosion protection effectiveness after surface modification with the PE4VP coating indicate the formation of a highly protective coating with high corrosion resistance imparted to the underlying titanium. The results presented here provide an insight into the optimization of strong polyelectrolyte cation adsorption process parameters and demonstrate that application of a PE4VP coating is a suitable method for surface modification of titanium to enhance corrosion protection in an aggressive environment.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc02777a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid Schottky and heterojunction vertical β-Ga2O3 rectifiers†","authors":"Jian-Sian Li, Chiao-Ching Chiang, Hsiao-Hsuan Wan, Madani Labed, Jang Hyeok Park, You Seung Rim, Meng-Hsun Yu, Fan Ren, Yu-Te Liao and Stephen J. Pearton","doi":"10.1039/D4TC03046J","DOIUrl":"https://doi.org/10.1039/D4TC03046J","url":null,"abstract":"<p >Junction barrier Schottky design Ga<small>₂</small>O<small>₃</small> rectifiers allow for a combination of low turn-on voltage and high breakdown voltage. Ni/Au/Ga<small>₂</small>O<small>₃</small> Schottky rectifiers and NiO/Ga<small>₂</small>O<small>₃</small> heterojunction rectifiers were fabricated on the same wafer and the percentage of the relative areas and diameters of each were varied from pure Schottky devices to pure heterojunction devices. The on-voltage increased from 0.6 V for Schottky rectifiers to 2.4 V for heterojunction rectifiers, with a monotonic decrease in forward current at fixed bias of 5 V from 375 nA cm<small>⁻²</small> to 175 nA cm<small>⁻²</small>. Conversely, the breakdown voltage increased monotonically as the proportion of heterojunction area increased, from 1.2 kV for Schottky rectifiers to 6.2 kV for pure heterojunction devices. Breakdown mostly was initiated at the edge of the anode contact but could also occur at the transition region from the Schottky contact to NiO edge termination. The Baliga figure of merit increased with both the relative percentage of area and diameter of the heterojunction contact from 0.2 GW cm<small>⁻²</small> to 3 GW cm<small>⁻²</small>, while the energy loss during switching also increased from 2 to 3.9 W cm<small>⁻²</small>. These trends illustrate the trade-offs of Schottky <em>versus</em> pn junctions for the operation of Ga<small>₂</small>O<small>₃</small> rectifiers.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Enhanced charge transport from Pd-doping in CsPbBr3 quantum dots for efficient photoelectrocatalytic water splitting","authors":"Wenxiao Gong, Yulan Li, Yang Yang, Heng Guo and Xiaobin Niu","doi":"10.1039/D4TC90156H","DOIUrl":"https://doi.org/10.1039/D4TC90156H","url":null,"abstract":"<p >Correction for ‘Enhanced charge transport from Pd-doping in CsPbBr<small>₃</small> quantum dots for efficient photoelectrocatalytic water splitting’ by Wenxiao Gong <em>et al.</em>, <em>J. Mater. Chem. C</em>, 2023, <strong>11</strong>, 6963–6970, https://doi.org/10.1039/D3TC00115F.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc90156h?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulation of photophysical properties in o-carborane derivatives and their application in white organic light-emitting diode devices†","authors":"Jina Lee, Yeonju Jeong, Sunhee Lee, Yi Sak Lee, Bubae Park, Taekyung Kim and Won-Sik Han","doi":"10.1039/D4TC03085K","DOIUrl":"https://doi.org/10.1039/D4TC03085K","url":null,"abstract":"<p >Two derivatives of <em>o</em>-carborane (<em>o</em>-Cb) were synthesized, enabling effective modulation of their photophysical properties by varying the substituents on the carbon atom within the <em>o</em>-Cb cage. <strong>CAPCb</strong> incorporates phenyl groups into the carbazole–anthracene motif, demonstrating weak dual emissions in solution due to efficient charge transfer (CT) from the carbazole to the <em>o</em>-Cb groups. In contrast, its methyl analog (<strong>CAMCb</strong>) primarily emits from a locally excited (LE) state in solution. The most notable characteristics were revealed in their solid-state photochemistry. <strong>CAMCb</strong> displayed multiple photoemissions in the film state, featuring strong LE emission at 450 nm and slightly weaker CT emission at 640 nm. In comparison, <strong>CAPCb</strong> exhibited weaker LE emission at 430 nm and stronger CT emission at 620 nm. This indicates that the CT states can be selectively activated or deactivated based on the substituents on the <em>o</em>-Cb and the phase. Minor modifications in molecular geometries through changes in the substituents at the <em>o</em>-Cb cage significantly influence their excited-state properties and emission characteristics. The distinct properties of <strong>CAPCb</strong> and <strong>CAMCb</strong> were utilized in the fabrication of white OLED devices, which demonstrated cool white emission with Commission Internationale de L’Eclairage (CIE) coordinates of (0.37, 0.30) and a correlated color temperature (CCT) of 3556 K measured at 500 cd m<small>⁻²</small>.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fluorinated polymeric insulating layer surface advancement by fluorine based cross-linking for high-performance organic electronic applications†","authors":"Heqing Ye, Hyeok-jin Kwon, Ka Yeon Ryu, Yufei Lu, Hyun Ho Choi, Sang Yong Nam, Zixiao Feng, Jeongwan Park, Jaewon Mo, Hongjian Zhang, Jihoon Lee, Hoyoul Kong and Se Hyun Kim","doi":"10.1039/D4TC03296A","DOIUrl":"https://doi.org/10.1039/D4TC03296A","url":null,"abstract":"<p >Insulating polymeric layers, like fluorinated polymers, are excellent dielectric materials for organic field-effect transistors (OFETs). However, their high hydrophobicity hinders the deposition of crystalline organic semiconductors, and the poor interface formed deteriorates the charge transfer characteristics. To improve the interface between the dielectric and organic semiconductor, the hydrophobicity of the polymer dielectric must be slightly reduced. Herein, we report the surface tuning of fluorinated dielectrics by the incorporation of fluorine-based UV-assisted crosslinkers. Because the crosslinker is also fluorine-based, the dielectric polymer solution can be homogenously mixed and deposited by a facile printing process to produce a highly polymerized film with excellent insulating properties. Characterization results confirm that the dielectric with crosslinkers enables the formation of an organic semiconductor layer with large crystal grains that facilitates charge transfer at the interface. As the characterization results, transfer curves, and bias-stress test results revealed, the high-quality interface enabled the successful fabrication of OFETs with excellent electrical performance and high thermal stability. The printing process was then applied to integrate multiple n-type and p-type OFETs into NOT, NOR, and NAND gates, demonstrating that the surface modulation of organic dielectrics is scalable and effective in fabricating stable and high-performance large-area organic field-effect devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":null,"pages":null},"PeriodicalIF":5.7,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}