Journal of Materials Chemistry C最新文献

{"title":"Application of metal organic frameworks (MOFs) and their derivatives in the cathode materials of aqueous zinc-ion batteries","authors":"Pingchun Guo, Shisong Ouyang, Hedong Jiang, Jiake Li, Hua Zhu and Yanxiang Wang","doi":"10.1039/D4TC03273J","DOIUrl":"https://doi.org/10.1039/D4TC03273J","url":null,"abstract":"<p >Aqueous zinc-ion batteries (AZIBs) have been the focus of secondary rechargeable battery research because of their high theoretical specific capacity, safety, and environmental friendliness. However, an ideal cathode material remains a primary challenge in the commercialization of aqueous zinc-ion batteries. Due to their low cost and large theoretical specific capacity, manganese-based cathode materials exhibit low conductivity and slow ion diffusion kinetics. Similarly, vanadium-based materials offer a high theoretical specific capacity but suffer from structural instability. Metal–organic frameworks (MOFs) offer adjustable structures, high porosities, and high specific surface areas and are used in energy storage. Recent studies have explored MOFs and their derivatives as positive electrode materials for AZIBs, demonstrating significant improvements in their electrochemical performance and cathode stability. This paper reviews the research progress on MOFs and their derivatives as cathode materials for aqueous zinc-ion batteries and discusses the application prospects and future challenges of MOFs and their derivatives in this context.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18591-18608"},"PeriodicalIF":5.7,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast synthesis of nickel phosphide nanosheets for ultra-stable hydrogen evolution in seawater splitting†","authors":"Weiwu Chen, Feng Lin, Chong Wang, Zhiming M. Wang and Zhaojun Qin","doi":"10.1039/D4TC03004D","DOIUrl":"https://doi.org/10.1039/D4TC03004D","url":null,"abstract":"<p >Efficient and stable electrocatalysts that can drive the hydrogen evolution reaction (HER) in seawater splitting are highly desirable for hydrogen production. Heterometal-doped nickel phosphides are generally considered as a potential candidate due to their unique properties and synergistic effect, which accelerates the electron transfer kinetics and boosts the intrinsic activity. Herein, we prepared Co-doped Ni<small>₅</small>P<small>₄</small> (Co–Ni<small>₅</small>P<small>₄</small>) under different calcination times by fast and one-step chemical vapor deposition, and for comparison, a series of Fe-doped Ni<small>₅</small>P<small>₄</small> (Fe–Ni<small>₅</small>P<small>₄</small>) were also prepared by the same method. Different calcination times bring different HER activity and the Co–Ni<small>₅</small>P<small>₄</small> prepared with 5 min calcination time (Co–Ni<small>₅</small>P<small>₄</small>-5m) exhibits a great catalytic activity, being higher than other Co–Ni<small>₅</small>P<small>₄</small> and Fe–Ni<small>₅</small>P<small>₄</small>. In alkaline seawater, the overpotential needed for Co–Ni<small>₅</small>P<small>₄</small>-5m is only 74 and 162 mV to achieve the current density of 10 and 100 mA cm<small>⁻²</small>, respectively. More importantly, Co–Ni<small>₅</small>P<small>₄</small>-5m exhibits great mechanical and electrochemical stability, and can be stably run under the current density of 100 mA cm<small>⁻²</small> for more than twenty days. The short synthesis time, great catalytic activity, and ultra-long-term stability make Co–Ni<small>₅</small>P<small>₄</small>-5m a suitable candidate in actual applications of seawater splitting for hydrogen.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 46","pages":" 18925-18933"},"PeriodicalIF":5.7,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers","authors":"Ali Ismael, Xintai Wang, Alaa Al-Jobory, Shanglong Ning, Turki Alotaibi, Bashayr Alanazi, Hanan Althobaiti, Junsheng Wang, Naixu Wei, Christopher J. B. Ford and Colin J. Lambert","doi":"10.1039/D4TC90182G","DOIUrl":"https://doi.org/10.1039/D4TC90182G","url":null,"abstract":"<p >Correction for ‘Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers’ by Ali Ismael <em>et al.</em>, <em>J. Mater. Chem. C</em>, 2024, <strong>12</strong>, 14004–14012, https://doi.org/10.1039/D4TC00478G.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 44","pages":" 18121-18121"},"PeriodicalIF":5.7,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc90182g?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Achieved excellent energy storage performance under moderate electric field in BaTiO3-modified Bi0.5Na0.5TiO3-based lead-free ceramics via multiple synergistic design†","authors":"Xiangluo Miao, Run Jing, Zhenhui Zhang, Xiangbin Zhang, Shibang Zhang, Pengfei Li, Changan Wang, Chung Ming Leung, Xingsen Gao and Min Zeng","doi":"10.1039/D4TC03558E","DOIUrl":"https://doi.org/10.1039/D4TC03558E","url":null,"abstract":"<p >Dielectric capacitors show great potential for use in pulse power devices due to their high power density. However, achieving ultrahigh recoverable energy density (<em>W</em><small>_rec</small>) and efficiency (<em>η</em>) remains a challenge, limiting their applications. To address this, Na<small>_0.5</small>Bi<small>_0.5</small>TiO<small>₃</small>–BaTiO<small>₃</small> (NBT-BT) ceramics were optimized for energy storage devices operating at a relatively low electric field (<em>E</em>). This study introduces a synergistic optimization strategy by incorporating Ca(Hf<small>_0.7</small>Zr<small>_0.3</small>)O<small>₃</small> (CHZ) into 0.93NBT–0.07BT (BNBT) ceramics. The addition of CHZ, in concentrations ranging from <em>x</em> = 0.00 to 0.18, significantly enhances the differences between saturation and remnant polarization from 15.6 μC cm<small>⁻²</small> to 42.5 μC cm<small>⁻²</small>, while reducing the grain size from 2.44 μm to 620 nm. An optimal <em>W</em><small>_rec</small> of ∼5.09 J cm<small>⁻³</small> with <em>η</em> of ∼77% was achieved in BNBT–0.14CHZ ceramics at a moderate electric field (283 kV cm<small>⁻¹</small>). Moreover, the energy storage density and efficiency exhibited good frequency stability (10–1000 Hz), temperature stability (25–150 °C) and fatigue resistance (1–10<small>⁴</small> cycles). A fast discharge time (∼72 ns) was concurrently realized at <em>x</em> = 0.14 ceramics. These results suggest that the eco-friendly BNBT–0.14CHZ ceramic is a promising candidate for application in dielectric energy storage capacitors under moderate electric field.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 125-136"},"PeriodicalIF":5.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma-activated copper-alkanolamine precursor paste for printed flexible antenna: formulation, mechanism, and performance evaluation†","authors":"Wendong Yang, Zihao Guo, Michael Hengge and Emil J. W. List-Kratochvil","doi":"10.1039/D4TC03346A","DOIUrl":"https://doi.org/10.1039/D4TC03346A","url":null,"abstract":"<p >Copper-based pastes have attracted significant attention for printed electronic applications because of their low cost and high conductivity. Copper precursor pastes are easier to prepare, exhibit long-term stability and do not have oxidation issues during preparation and storage, when compared to copper micro-sized flakes and nanoparticle pastes. Up to now, copper precursor pastes activated by plasma have been rarely studied, and their activation mechanism is not clear. Furthermore, little attention has been paid to the application of these pastes in wireless electronic devices. In this paper, therefore, we formulated a plasma-activated copper–alkanolamine complex precursor paste for antenna applications. The paste was formulated only using copper(<small>II</small>) formate and excess 2-amino-2-methyl-1,2-propanediamine, which exhibited favorable flowability for screen printing. Copper films with good conductivity were produced on PET substrates by plasma sintering this paste. The effects of plasma sintering time on the properties of the copper film were explored and correlations between them were established. A possible plasma activation mechanism was proposed. Finally, a flexible ultra-wideband antenna with notch properties was fabricated with the copper paste, demonstrating its feasibility in wireless electronics applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 334-344"},"PeriodicalIF":5.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review","authors":"Inhong Hwang, Minki Choe, Dahui Jeon and In-Hwan Baek","doi":"10.1039/D4TC03452J","DOIUrl":"https://doi.org/10.1039/D4TC03452J","url":null,"abstract":"<p >The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has fostered a mutually reinforcing relationship, whereby each technology has contributed to the advancement of the other. However, the advancement of semiconductor technology is currently hampered by the lateral scaling limitations of silicon-based transistors, creating a bottleneck for mutual advancement. Innovative channel materials capable of increasing transistor/cell density through vertical integration processes are required for continued advances in semiconductors and AI. Oxide semiconductors are prime candidates for back-end-of-line (BEOL)-compatible thin-film transistors (TFTs), which are essential for vertically stackable 3D device technologies due to their excellent electrical properties and compatibility with atomic layer deposition (ALD). In this review, we explore the latest developments in ALD-derived n- and p-type oxide TFTs, with a particular focus on performance enhancement strategies including composition modulation, interface and surface engineering, ion doping, and process control. The integration of oxide semiconductors <em>via</em> ALD is of the utmost importance for contemporary semiconductor devices, as it enables the implementation of vertical CMOS logic circuits and advanced memory technologies, including 3D-DRAM. Our findings indicate that ALD-derived oxide semiconductors have the potential to overcome current limitations and facilitate the development of the next generation of high-performance, vertically integrated semiconductor devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 45","pages":" 18167-18200"},"PeriodicalIF":5.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of counterion tether length on stability, work function and application of a self-compensated, hole-doped triarylamine-alt-fluorene model polymer†","authors":"Qi-Mian Koh, Kevin Christopher Boellaard, Yu Wang, Cindy G. Tang, Qiu-Jing Seah, Peter. K. H. Ho, Rui-Qi Png and Lay-Lay Chua","doi":"10.1039/D4TC02228A","DOIUrl":"https://doi.org/10.1039/D4TC02228A","url":null,"abstract":"<p >Self-compensated, hole-doped polymers with ultrahigh workfunction can provide ohmic hole contacts even for deep-ionization-energy semiconductors. The self-compensation is usually imposed by an anion tethered to a flexible –(CH<small>₂</small>)<small>_<em>n</em></small>– chain, but the effect of tether length <em>n</em> is unknown. Here, using the mTFF triarylamine–fluorene as a model semiconductor, we have designed, synthesized and characterized a family of mTFF-C<em>n</em>SISC<small>₂</small>F<small>₅</small> polymers, where C<small>₂</small>F<small>₅</small>SIS is the pentafluoroethanesulfonylimidosulfonyl anion, tethered to a C<em>n</em> alkylene chain that is systematically varied between C2 and C6 in length. Solution doping yields self-compensated films with a work function of <em>ca.</em> 5.75 eV, which is <em>ca.</em> 0.15 eV higher than that obtained by film doping and higher than that of the corresponding hole-doped mTFF films counterbalanced by SbF<small>₆</small><small>⁻</small> anions. We attribute the higher work function to a frustrated packing of the counteranions about the holes. The ultrahigh work function is consistent with electroabsorption measurements and the ability of the films to inject holes into PFOP, a model deep-ionization-energy semiconductor, without bias pre-conditioning. While the tether length only weakly influences the work function, it strongly influences hygroscopicity, processability, and thermal stability of the hole-doped polymers. OPLS4 molecular dynamics simulations suggest that short tether lengths (C2 and C3) result in interchain charge compensation, but medium and long tether lengths (C4 and C6) result in mixed interchain/intrachain charge compensation. Overall, the C3 tether provides the best thermal and ambient stability. These results reveal new aspects regarding the role of tether length in self-compensated, charge-doped polymers.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19643-19659"},"PeriodicalIF":5.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/tc/d4tc02228a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable self-powered intelligent textile with optical–electrical dual-mode functionality for pressure distribution detection and remote intelligent control†","authors":"Junhuan Li, Zhen Tian, Li Su, Yilong Yang, Chang Ding, Chen Wang, Ming Sun and Yong Zhao","doi":"10.1039/D4TC03728F","DOIUrl":"https://doi.org/10.1039/D4TC03728F","url":null,"abstract":"<p >Wearable fabrics with optical–electrical dual-mode functionality have attracted extensive attention for use as next-generation smart wearables because of their capability to simultaneously provide bodily and visual perception. Herein, a novel wearable self-powered intelligent textile (WSIT) is proposed based on a continuous manufacturing process in which triboelectrification-induced electroluminescence (TIEL) and single-electrode triboelectric nanogenerator (TENG) are combined. Because of the triboelectrification-based optical–electrical synergistic effect, significant electrical (120 V, 0.25 μA, 8 nC) and optical (5.17 μW cm<small>⁻²</small>) outputs are simultaneously achieved in WSIT (5 cm<small>²</small>). Moreover, the WSIT performs well in stability, durability, and comfort, showing high flexibility, washability, breathability, chemical resistance, and hydrophobicity, without sacrificing its original properties. By leveraging the excellent electrical sensing performance, the sensing array of 8 × 8 pixels is capable of detecting and imaging the pressure distribution caused by a shuttlecock. Under the optical sensing mode, WSIT can recognize the luminescent trajectory of the finger, enabling the remote operation of computer games and switching of a desk lamp. This work provides a new framework for developing high-performance WSIT with optical–electrical dual-mode functionality, which may lead to its extensive application in fields like intelligent robots, augmented reality, and smart homes.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 47","pages":" 19078-19085"},"PeriodicalIF":5.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142778019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review","authors":"Chaojiang Li, Yuxin Yang, Rui Qu, Xun Cao, Guodong Liu, Xin Jin, Yuxuan Liu, Shenggui Liu, Wang Jiang and Xianchao Zhang","doi":"10.1039/D4TC00612G","DOIUrl":"https://doi.org/10.1039/D4TC00612G","url":null,"abstract":"<p >The demands for precision machining of silicon-based materials are growing in various modern applications, including micro-electro-mechanical systems (MEMS), micromotors, sensors, bioelectronics, medical implants, and microfluidic devices. Towards the miniaturization and high-precision trends, it is essential to explore recent advancements in plasma etching of silicon-based materials. This review aims to provide a comprehensive review of the latest advancements in plasma etching for micro and nanofabrication of silicon-based materials, including silicon, silicon dioxide, silicon carbide, silicon nitride, and silicon germanium. The review begins by addressing etching mechanisms, simulation methods, and recent novel approaches and enhancements in plasma etching. Subsequently, separate sections are dedicated to discussing commonly utilized chemistries, process routes, and processing parameters specific to each type of silicon-based material during plasma etching. Subsequently, functional structures such as micropillar arrays, high-aspect-ratio holes and nanowires formed through plasma etching alongside their applications across various fields are summarized. In the end, current research trends and future prospects in plasma etching for micro and nanofabrication of silicon-based materials are discussed. This review article seeks to address both the academic and industrial audience thereby leading to further innovations for plasma etching of silicon-based materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 45","pages":" 18211-18237"},"PeriodicalIF":5.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain and U driven phase transitions in monolayer intrinsic ferrovalley NbIn2As2Se2†","authors":"Jiajun Zhu, Heyun Zhao and Wanbiao Hu","doi":"10.1039/D4TC03637A","DOIUrl":"https://doi.org/10.1039/D4TC03637A","url":null,"abstract":"<p >The manipulation of the valley degree of freedom presents opportunities for both research and practical application. In this work, we theoretically demonstrate that the intrinsic valley anomalous Hall effect can exist in monolayer NbIn<small>₂</small>As<small>₂</small>Se<small>₂</small>. Due to time-reversal symmetry breaking, monolayer NbIn<small>₂</small>As<small>₂</small>Se<small>₂</small> is an out-of-plane magnetization semiconductor with a Curie temperature of 232 K. The ability to induce phase transitions in the material through strain and the <em>U</em> value leads to different electronic states like the valley quantum anomalous Hall effect and the half-valley-metal state. The chiral-spin-valley locking of edge states and the band inversion of the d orbital of Nb at the K/K′ valley offer insights into the mechanisms behind these transitions. These findings not only contribute to the fundamental understanding of topology, spintronics, and valleytronics, but also pave the way for potential practical applications and experimental investigations in this exciting and rapidly evolving field.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 1","pages":" 484-490"},"PeriodicalIF":5.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}