Journal of Materials Chemistry C最新文献

{"title":"Bioinspired multisensory fusion using a MoTe2 optoelectronic memristor with oxygen plasma treatment for in-sensor reservoir computing","authors":"Shuang Ge, Qiang Wang, Jingyao Bian, Zhuangzhuang Li, Ye Tao, Meng Qi, Zewei Wang, Siyu Liu, Zhongqiang Wang, Yongxing Zhu, Ya Lin, Xiaoning Zhao, Haiyang Xu and Yichun Liu","doi":"10.1039/D5TC02712H","DOIUrl":"https://doi.org/10.1039/D5TC02712H","url":null,"abstract":"<p >Biological multimodal perception systems play a pivotal role in environmental interactions through the sophisticated integration of multisensory information. Inspired by this natural paradigm, we demonstrate a breakthrough two-dimensional MoTe<small>₂</small>-based optoelectronic memristor capable of synergistically processing infrared optical and electrical signals in a monolithic device – a critical advancement toward artificial multimodal sensing systems. The developed structure demonstrates superior biorealistic synaptic functionalities, including tunable short-term plasticity, paired-pulse facilitation, and spike-time-dependent plasticity through photoelectronic co-modulation. More significantly, we construct a multimodal reservoir computing architecture that synergistically combines optical and electrical inputs, achieving higher pattern recognition accuracy compared to the single mode. This work establishes a new dimension in neuromorphic hardware design through inherent multimodal signal fusion capabilities. Our findings provide fundamental insights into photoelectronic coupling mechanisms while demonstrating practical pathways toward high-efficiency neuromorphic computing systems with biological sensory integration.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 21006-21014"},"PeriodicalIF":5.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145341105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A high strength and dendrite free low-temperature nanocellulose composite PVA gel electrolyte for zinc ion batteries","authors":"Jingyu Du, Daohai Zhang, Yuhuan Xu, Xiao Zhan and Shuhao Qin","doi":"10.1039/D5TC01464F","DOIUrl":"https://doi.org/10.1039/D5TC01464F","url":null,"abstract":"<p >With the increasing global energy demand, water-based zinc ion batteries have received widespread attention. However, the growth of zinc dendrites and the occurrence of side reactions on the surface of zinc electrodes can affect the capacity of zinc ion batteries, hindering their practical application. This study reports a multifunctional dendrite-free gel electrolyte prepared by introducing carboxyl modified nanocellulose (C-CNFs) into a polyvinyl alcohol (PVA) based gel electrolyte. At the same time, we also add the antifreeze agent dimethyl sulfoxide (DMSO) to it, which greatly improves the low-temperature performance of gel electrolytes. The rich functional groups on the surface of C-CNFs can effectively adjust the continuous movement of PVA and improve the mechanical strength of the gel electrolyte, and at the same time, they can effectively absorb zinc ions, enable uniform distribution of zinc ions in the electrolyte, reduce the interface concentration gradient, and reduce the occurrence of side reactions, so that the zinc ion deposition is more uniform, and dendrite free deposition is achieved. The polyaniline zinc ion battery assembled with this electrolyte can stably cycle over 3000 times at room temperature, with a capacity retention rate of 83.23%. At −20 °C, the capacity retention rate reaches 60% after 1200 cycles.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20531-20539"},"PeriodicalIF":5.1,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stable operation of two-dimensional field-effect transistors with van der Waals integrated SrTiO3 top-gate dielectrics","authors":"Yanran Liu, Allen Jian Yang, Shanhu Wang, Huiping Han, Jiayi Qin, Zhiwei Li, Tianli Jin, Josephine Si Yu See, Liang Wu and X. Renshaw Wang","doi":"10.1039/D5TC02024G","DOIUrl":"https://doi.org/10.1039/D5TC02024G","url":null,"abstract":"<p >The ultra-thin atomic layer structure of two-dimensional (2D) materials confers potential capabilities that extend and transcend Moore's law, while rendering them highly susceptible to environmental factors such as temperature fluctuations, adsorbates, and trap charges in adjacent dielectric materials. Consequently, the stability of 2D material-based devices has become critically important for the fabrication of low-power field-effect transistors (FETs). In this work, we constructed top-gated 2D FETs using monolayer MoS<small>₂</small> and SrTiO<small>₃</small> (STO) as the channel and dielectrics, respectively. We systematically investigated their temperature stability, electrical hysteresis and long-term stability under ambient conditions. Experimental results demonstrate that STO top-gated MoS<small>₂</small> FETs exhibit remarkable stability, maintaining performance after one month of ambient exposure and showing no irreversible degradation under thermal (100 °C) and electrical stress conditions. This study provides valuable reference for enhancing the stability of low dimensional devices and for developing 2D devices with complex functionalities.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 39","pages":" 20056-20064"},"PeriodicalIF":5.1,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145248110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photochromic and photoluminescence modulation properties of Zr6Nb2O17 ceramics doped with a variety of rare earth ions","authors":"Jiao Liu, Qiangqiang Wen, Jianwei Cao, Yuwei Ma, Weixiang Shang, Gaofei Pan, Hongxia Li, Fei Ruan, Qingchun Wang and Jinxiao Bao","doi":"10.1039/D5TC02458G","DOIUrl":"https://doi.org/10.1039/D5TC02458G","url":null,"abstract":"<p >Inorganic photochromic (PC) materials are increasingly recognized as promising candidates for anti-counterfeiting technologies and optical storage applications. To enhance their practical value, integrating superior mechanical properties can improve durability, ensuring stable performance over extended periods of use. In this study, we synthesized Zr<small>₆</small>Nb<small>₂</small>O<small>₁₇</small>-based structural–functional integrated ceramics doped with rare earth ions (Sm<small>³⁺</small>, Eu<small>³⁺</small>, Dy<small>³⁺</small>, and Ho<small>³⁺</small>) using the high-temperature solid-state reaction method. By controlling the excitation energy of luminescent centers, we regulated the photochromic contrast and photoluminescence modulation ratio of the materials. The results showed that, upon irradiation with 365 nm UV light, all prepared ceramic samples exhibited a significant deepening in color. The photochromic contrasts of the four types of rare earth ion-doped Zr<small>₆</small>Nb<small>₂</small>O<small>₁₇</small> ceramics were 20.4% (Sm<small>³⁺</small>), 20.3% (Eu<small>³⁺</small>), 19.5% (Dy<small>³⁺</small>), and 20.0% (Ho<small>³⁺</small>), significantly higher than the undoped matrix's contrast of 12.4%. After heating at 350 °C, the colors of the ceramics were restored. Even after eight coloring–bleaching cycles, the color-changing performance remained stable, demonstrating excellent cycling stability and reversibility. Fluorescence modulation based on photochromic reactions effectively controlled the luminescence intensity of the rare earth ions, with luminescence modulation ratios of 39.7% (Sm<small>₂</small>O<small>₃</small>), 62.9% (Eu<small>₂</small>O<small>₃</small>), 61.2% (Dy<small>₂</small>O<small>₃</small>), and 41.3% (Ho<small>₂</small>O<small>₃</small>). The Vickers hardness values of different compositions ranged from 14.66 to 15.90 GPa, while the fracture toughness values ranged between 4.66 and 4.98 MPa m<small>^1/2</small>. All ceramic materials exhibited excellent cycling stability, reversibility, and rapid photoresponse times, indicating significant potential for applications in optical information storage.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 39","pages":" 20289-20301"},"PeriodicalIF":5.1,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145248131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si nanohole array (Si NHA)-based type-I heterojunction for filterless self-powered ultraviolet photodetection","authors":"Jin-Xulong Gao, Chen-Yang Huang, Xiu-Xing Xu, Wei Shu, Feng-Xia Liang, Shi-Rong Chen, Yu-Xue Zhou, Chun-Yan Wu and Lin-Bao Luo","doi":"10.1039/D5TC02638E","DOIUrl":"https://doi.org/10.1039/D5TC02638E","url":null,"abstract":"<p >We report the fabrication of an Si nanohole array (NHA)/SnO type-I heterostructure by depositing a p-SnO film onto an n-Si NHA substrate through RF magnetron sputtering using a high-purity Sn target. For the Si NHA with a period of 300 nm, stronger UV light trapping is expected. Moreover, due to the large valence band offset, the transportation of photogenerated holes in the Si side is impeded. This suppresses the contribution of visible and near-infrared absorption in Si to the photoresponse, resulting in a response dominated by the wide-bandgap SnO film. The device functions well as a self-powered, filterless UV photodetector, showing a responsivity of 0.28 A W<small>⁻¹</small>, a specific detectivity of 1.10 × 10<small>¹³</small> Jones, and a fast response speed (240/190 μs for rise/fall) under 265 nm illumination. The device also exhibits promising potential for anti-interference UV communication.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 20989-20995"},"PeriodicalIF":5.1,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145341103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of color-tunable TADF emitters in OLEDs: from design strategies to color modulation","authors":"Tapashi Sarmah, Chakali Srinivas, Debika Barman, Rajdikshit Gogoi, Retwik Parui, Kavita Narang, Himangshu Baishya and Parameswar Krishan Iyer","doi":"10.1039/D5TC02697K","DOIUrl":"https://doi.org/10.1039/D5TC02697K","url":null,"abstract":"<p >Organic thermally activated delayed fluorescence (TADF) materials have gained considerable attention in recent times, specifically in advancing organic light-emitting diodes (OLEDs) due to the possibility of achieving 100% EQE and the ability to tune their emission color. This review highlights the evolution of molecular design strategies that enable precise control of the singlet–triplet energy gap (Δ<em>E</em><small>_ST</small>) and reverse intersystem crossing (RISC), thereby advancing device efficiency and color purity. We discuss the progression from early donor–acceptor systems to more advanced methodologies, including π-conjugation tuning and steric and substituent engineering, through-space charge transfer (TSCT), multi-resonance (MR) TADF, and circularly polarized luminescence (CPL)-active TADF emitters. In the later sections, we summarize the progression from the early conceptual development to the recent emergence of blue, green, red, and white TADF OLEDs and their operation mechanism. Thus, the objective of this review is to connect molecular design strategies with the development of next-generation TADF materials for high-performance, color-tunable OLEDs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20367-20423"},"PeriodicalIF":5.1,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crosslinking site sharing-driven interface engineering to enhance adhesion between PDMS substrates and Ag–PDMS conductors","authors":"Dong Hyoun Park, Dong Won Lee, Hoon Yeub Jeong, Jun-Chan Choi and Seungjun Chung","doi":"10.1039/D5TC02376A","DOIUrl":"https://doi.org/10.1039/D5TC02376A","url":null,"abstract":"<p >Elastomeric silicon polymers have gained attention as promising stretchable substrate materials owing to their outstanding chemical stability and mechanical and optical properties. However, their low surface energy and chemical inertness hinder reliable adhesion with stretchable conductors, which leads to permanent device failures. To address this issue, this study proposes an interfacial engineering strategy to enhance the adhesion between polydimethylsiloxane (PDMS) substrates and stretchable conductors <em>via</em> crosslinking site sharing. Using an Ag–PDMS composite as a stretchable conductor material, spontaneous crosslinking could be induced at the interface with the PDMS substrate during the thermal curing process. Moreover, tailoring the polymer chain composition of the PDMS substrate allowed the investigation of the factors influencing interfacial crosslinking and the determination of conditions favourable for enhanced adhesion. Additionally, we developed a selective surface modification technique that enhances interfacial adhesion by locally infiltrating vaporised crosslinkers into predefined conductor regions while preserving the bulk modulus of the predesigned substrate. This localised reinforcement also improves the surface modulus of the PDMS substrate at the adhesion interface, promoting effective stress dissipation during mechanical deformation. Consequently, it suppresses crack initiation and propagation in the conductor regions, offering a promising strategy for enhancing the reliability of stretchable electronic devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 21137-21144"},"PeriodicalIF":5.1,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145341112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced charge trapping effect in PVA/PbI2 synaptic transistors achieved through integrated UV irradiation and thermal annealing treatments","authors":"Yonglin Yang, Xiao Fu, Honglong Ning, Zhihao Liang, Weixin Cheng, Junxiong Luo, Han He, Weiguang Xie, Rihui Yao and Junbiao Peng","doi":"10.1039/D5TC01587A","DOIUrl":"https://doi.org/10.1039/D5TC01587A","url":null,"abstract":"<p >Charge-trapping synaptic transistors, owing to their excellent non-volatility, controllable channel conductance, and switching performance, have garnered widespread attention as promising candidates for neuromorphic devices. In this study, the underlying PVA film can smooth the surface of the PbI<small>₂</small> film, thus decreasing its surface roughness and alleviating the charge trapping phenomenon at the PbI<small>₂</small>/IGZO heterojunction. The PVA/PbI<small>₂</small> charge-trapping synaptic transistors exhibit progressively enhanced charge-trapping capacity with increasing PbI<small>₂</small> thickness, attributed to the elevated concentration of iodine vacancies (V<small>_I</small>) within the PbI<small>₂</small> layer. Moreover, the synergistic combination of UV irradiation and thermal annealing can significantly enhance the charge trapping capability of PVA/PbI<small>₂</small> synaptic transistors because it induces the decomposition of PbI<small>₂</small> and the formation of PbO, thus modulating the concentration of V<small>_I</small>. At a lower UV irradiation intensity of 87.5 mW cm<small>⁻²</small>, the hysteresis window of the devices initially increases, then decreases with increasing temperature. In contrast, when the UV irradiation intensity is elevated to 122.5 mW cm<small>⁻²</small>, the hysteresis window shows a monotonic decrease with increasing temperature. When the UV irradiation intensity was maintained at 87.5 mW cm<small>⁻²</small> and the thermal annealing temperature at 150 °C, the device demonstrated a substantial hysteresis window of 8.56 ± 0.34 V (<em>V</em><small>_G</small>: −10–10 V). Finally, the PVA/PbI<small>₂</small> charge-trapping synaptic transistor manifested typical synaptic characteristics. The image recognition accuracy reached as high as 90.1% after 40 training epochs. This suggests that PVA/PbI<small>₂</small> synaptic transistors hold considerable promise in the fields of neuromorphic computing and artificial intelligence (AI).</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 39","pages":" 20169-20181"},"PeriodicalIF":5.1,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145248118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Janus S-XSSe: a new family of 2D polar half-metals with stacking-engineered magnetism and antiferromagnetic spin splitting","authors":"Yu Liu, ShuaiYu Wang, Dan Jiang, Lei Wang and Fengyu Li","doi":"10.1039/D5TC01948F","DOIUrl":"https://doi.org/10.1039/D5TC01948F","url":null,"abstract":"<p >The quest for materials uniting polarity with metallicity or half-metallicity is pivotal for next-generation multifunctional devices, yet their realization, particularly with robust magnetism, remains a formidable challenge. Here, we unveil a new family of two-dimensional (2D) Janus <em>S</em>-XSSe (X = Re, Os, V, Cr and Mo) monolayers as intrinsically polar metals/half-metals, exhibiting substantial out-of-plane polarization (2.56–4.00 pC m<small>⁻¹</small>) and excellent structural stability. We demonstrate that <em>S</em>-VSSe, <em>S</em>-CrSSe and <em>S</em>-MoSSe are polar half-metals, where the distinct origins of polarity (S–Se electronegativity difference) and half-metallicity (transition metal d-orbitals) enable their robust coexistence. Furthermore, intriguing anisotropic Rashba effects have been observed in polarized metallic <em>S</em>-ReSSe and <em>S</em>-OsSSe monolayers. In addition, we identify a viable polarization switching pathway, whose energy barrier can be effectively tuned by biaxial strain. Moreover, bilayer <em>S</em>-XSSe systems exhibit enhanced magnetic transition temperature and stacking-dependent magnetism, elucidated <em>via</em> spin Hamiltonian analysis and interlayer electron hopping. Remarkably, an interlayer antiferromagnetic <em>S</em>-VSSe bilayer with parallel polar stacking exhibits significant spin splitting alongside nontrivial topological characteristics, a direct consequence of the built-in electric field breaking inversion symmetry. This discovery of a novel class of polar metals/half-metals, particularly the emergent antiferromagnetic spintronic phenomena in bilayers, paves the way for innovative spintronic and multifunctional electronic applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20482-20490"},"PeriodicalIF":5.1,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Maximizing sunlight absorption in narrow bandgap semiconducting copper(i) iodides for enhanced photocatalytic dye degradation","authors":"Gia M. Carignan, Simon J. Teat, Xiuze Hei, Srinivas Chakravartula, Gene Hall, Le Hong Nguyen and Jing Li","doi":"10.1039/D5TC02511G","DOIUrl":"https://doi.org/10.1039/D5TC02511G","url":null,"abstract":"<p >Photocatalytic dye degradation leverages sunlight to break down dyes and pigments into safer, simpler molecules. Using a material that can absorb a broad range of the solar spectrum optimizes the speed and efficiency of this process. In this study, we explore a series of new, narrow bandgap copper iodide semiconductors (1.5–1.7 eV) with various dimensionalities (0D to 3D) to evaluate their photocatalytic efficiency in dye degradation. The most effective material achieved 95% degradation within just 27 minutes. Mass spectrometry provided a detailed insight and in-depth understanding into the degradation mechanism. All materials demonstrated excellent stability under ambient conditions, highlighting their promise as eco-friendly candidates for dye degradation in water purification.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20580-20588"},"PeriodicalIF":5.1,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02511g?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}