Stable operation of two-dimensional field-effect transistors with van der Waals integrated SrTiO3 top-gate dielectrics

Abstract

The ultra-thin atomic layer structure of two-dimensional (2D) materials confers potential capabilities that extend and transcend Moore's law, while rendering them highly susceptible to environmental factors such as temperature fluctuations, adsorbates, and trap charges in adjacent dielectric materials. Consequently, the stability of 2D material-based devices has become critically important for the fabrication of low-power field-effect transistors (FETs). In this work, we constructed top-gated 2D FETs using monolayer MoS₂ and SrTiO₃ (STO) as the channel and dielectrics, respectively. We systematically investigated their temperature stability, electrical hysteresis and long-term stability under ambient conditions. Experimental results demonstrate that STO top-gated MoS₂ FETs exhibit remarkable stability, maintaining performance after one month of ambient exposure and showing no irreversible degradation under thermal (100 °C) and electrical stress conditions. This study provides valuable reference for enhancing the stability of low dimensional devices and for developing 2D devices with complex functionalities.