Journal of Materials Chemistry C最新文献

{"title":"Revealing the excited-state emission pathways in indolizine-derived TADF molecules by photoluminescence and electroluminescence","authors":"Emmanuel Santos Moraes, Elisa Barbosa de Brito, Jilian Nei de Freitas, Rene Alfonso Nome, Manoela Sacramento, Fabiano Severo Rodembusch, Paulo Henrique Schneider and Teresa Dib Zambon Atvars","doi":"10.1039/D6TC00799F","DOIUrl":"https://doi.org/10.1039/D6TC00799F","url":null,"abstract":"<p >Thermally activated delayed fluorescence (TADF) enables the harvesting of triplet excitons in purely organic emitters, yet the relationship between photoluminescence (PL) and electroluminescence (EL) pathways resulting in emissive states remains poorly understood. Herein, we explore indolizine derivatives as TADF emitters by reporting the synthesis and a comprehensive investigation of their photophysical properties. While the parent indolizine (<strong>Z</strong>) and the carbazole-substituted derivative (<strong>ZCz</strong>) do not exhibit TADF, phenoxazine- and phenothiazine-based compounds (<strong>ZPX</strong> and <strong>ZPT</strong>) display TADF behavior in rigid environments. Photophysical studies performed in polymer matrices (PS and PMMA) and in host–guest systems using mCP reveal the participation of locally excited (<small>¹</small>LE, <small>³</small>LE) and charge-transfer (<small>¹</small>CT, <small>³</small>CT) states, giving rise to two delayed fluorescence pathways mediated by reverse intersystem crossing (RISC). Temperature-dependent emission and kinetic analysis indicate that distinct triplet states contribute differently to delayed emission, supported by DFT/TD-DFT calculations and small singlet–triplet energy gaps (Δ<em>E</em><small>_ST</small>). A direct comparison between PL and EL demonstrates that electrical excitation preferentially accesses the CT-states, leading to measurable differences in emission profiles despite a common emissive <small>¹</small>CT state. Organic light-emitting diodes (OLEDs) incorporating <strong>ZPX</strong> and <strong>ZPT</strong> achieve external quantum efficiencies (EQE) of up to 8.7%. These results highlight indolizine-based architectures as promising TADF emitters and demonstrate that excitation-dependent excited-state pathways are a critical design consideration for OLEDs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10634-10646"},"PeriodicalIF":5.1,"publicationDate":"2026-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graded surface-engineered lignin-derived carbon dots for tunable multicolor anti-counterfeiting films","authors":"Shuai Wang, Fengfeng Li, Zhili Zhang and Xingxiang Ji","doi":"10.1039/D6TC00439C","DOIUrl":"https://doi.org/10.1039/D6TC00439C","url":null,"abstract":"<p >Multicolor luminescence modulation of lignin-derived carbon quantum dots (LD-CQDs) is a key prerequisite for anti-counterfeiting applications; however, achieving this through surface engineering using a single precursor remains challenging. This study develops a stepwise surface chemical modulation strategy using alkali lignin (AL) as the sole carbon source to achieve continuous photoluminescence (PL) tuning of LD-CQDs from blue to yellow. Blue-emitting LD-CQDs (L-CQDs) were first synthesized <em>via</em> choline chloride-assisted hydrothermal treatment. Subsequent synergistic nitrogen/sulfur (N/S)-codoping with 2,4-diaminobenzenesulfonic acid produced green emissive LD-CQDs (N-CQDs) with a markedly enhanced quantum yield of 16.3%. Controlled nitric acid oxidation of N-CQDs further yielded oxygen-doped LD-CQDs (O-CQDs) enriched with electron-withdrawing oxygen-containing moieties, resulting in a pronounced PL red shift to the yellow region. Comprehensive structural characterizations confirmed the progressive incorporation of N/S/O heteroatomic functional groups and elucidated their strong structure–property correlations with the sequential PL red shift. Polyvinyl alcohol (PVA) served as a dispersing stabilizer and film-forming matrix to fabricate carbon quantum dot/polyvinyl alcohol (CQDs/PVA) printed fluorescent films (CPPFs) and composite fluorescent films (CPCFs) <em>via</em> screen printing and template casting, respectively. The resulting films exhibited excellent fluorescence and ultraviolet-shielding performance, providing a robust basis for anti-counterfeiting packaging applications. Overall, this work establishes an efficient and generalizable surface-engineering strategy for precise PL regulation of LD-CQDs, underscoring their potential for rapid-response anti-counterfeiting technologies and functional packaging materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10647-10660"},"PeriodicalIF":5.1,"publicationDate":"2026-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of group-IV multiferroic films with giant mid-infrared responsivity","authors":"Shuxin Luo, Yongle Zhong, Yuxiang Xiao, Wentao Li, Songyu Chen, Jie Yang, Wen Xiong, Zhengfang Qian and Pu Huang","doi":"10.1039/D6TC00889E","DOIUrl":"https://doi.org/10.1039/D6TC00889E","url":null,"abstract":"<p >Achieving ferroelectric (FE) polarization in two-dimensional (2D) group-IV materials has been a long-sought objective, owing to their significant potential in next-generation Si-based non-volatile logic and memory devices. Here, we demonstrate that atomic rearrangements at the crystallographic planes of group-IV materials can reconstruct the local coordination environment, thereby inducing FE polarization in the resulting thin films. We identify 14 previously unreported 2D phases of group-IV films, with the (111)-derived <em>Pmc</em>2<small>₁</small> phase exhibiting the lowest energy among all known group-IV 2D structures. Moreover, its monolayer can be readily exfoliated due to the low exfoliation energy, comparable to experimentally accessible 2D materials. These group-IV films display multiferroic ordering and diverse electronic functionalities, including low switching barriers, ultrahigh electron mobility, and strongly polarization-selective absorption and mid-wavelength infrared responsivity spanning the full 3–5 µm window. Importantly, the multiferroic transition allows interconversion among six symmetry-equivalent FE variants, offering a non-volatile approach for reconfiguring the orientation-dependent, polarization-selective optical transitions <em>via</em> ferroic switching. Our findings provide valuable insights into the FE mechanism in group-IV films, opening new avenues for the design and discovery of IV-based FE devices, and advancing the understanding of the rich physics in tetrahedral semiconductors.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10777-10787"},"PeriodicalIF":5.1,"publicationDate":"2026-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A flexible pressure sensor based on a PVA/TA/CNT organogel for deep learning powered human gesture recognition","authors":"Hanfei Zhu, Liang Xu, Xinqing Sun, Jun Liu, Peng Pan and Zhengchun Yang","doi":"10.1039/D6TC00308G","DOIUrl":"https://doi.org/10.1039/D6TC00308G","url":null,"abstract":"<p >Gel-based pressure sensors are widely used in wearable electronics to provide features of human activity detection like gesture, gait, and sitting posture recognition. Herein, we report a double-network (DN), non-swelling, and adhesive organogel by means of physical cross-linking. Two types of polyvinyl alcohol (PVA) were mixed at a mass ratio of 1 : 1.4 and used as the matrix of the hydrogel. 1.5 wt% of tannic acid (TA) was added as a cross-linking agent, and 2 wt% of carbon nanotubes (CNTs) was added as both the reinforcing framework and conductive material. After freeze–thaw treatment, the performance of the resistive pressure sensor was greatly improved. Fabricated using a binary solvent system of ethylene glycol (EG) and deionized (DI) water, the PVA/TA/CNT organogel exhibited excellent strength. The PVA/TA/CNT organogel sensor exhibited a sensitivity of 9.088% kPa<small>⁻¹</small>, the highest pressure detection of 130.3 kPa, a response/recovery time (230 ms/450 ms), and excellent repeatability (2000 cycles). Additionally, a square-shaped organogel pressure sensor with a 3 cm side length was prepared. Combined with a circuit containing a microcontroller, multiplexer, operational amplifier, and other components, 13-channel resistance data acquisition was realized. This corresponded to a total of 156 virtual tactile points on the sensor to react to pressure on different sensor components. Four widely used gesture recognition types were achieved with an accuracy of 98.75% using the Convolutional Neural Network-Multilayer Perceptron (CNN-MLP) model. This study demonstrates the enormous potential of organogel-based materials for the creation of intelligent, flexible pressure sensors with exceptional stability.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10686-10694"},"PeriodicalIF":5.1,"publicationDate":"2026-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"(C4H8N5)(PhPHO2)·H2O: a polar ionic cocrystal with strong second-harmonic generation and high birefringence","authors":"Peng Zhuang, Bing-Ping Yang and Jiang-Gao Mao","doi":"10.1039/D6TC00634E","DOIUrl":"https://doi.org/10.1039/D6TC00634E","url":null,"abstract":"<p >A polar ionic cocrystal, 2,4-diamino-6-methyl-1,3,5-triazinium phenylphosphinate monohydrate (<strong>AMTPP</strong>), (C<small>₄</small>H<small>₈</small>N<small>₅</small>)(PhPHO<small>₂</small>)·H<small>₂</small>O, was successfully synthesized. The material exhibits exceptional nonlinear optical (NLO) properties, including a second-harmonic generation (SHG) response approximately 2.0 times that of KH<small>₂</small>PO<small>₄</small> (KDP), a high laser-induced damage threshold of 1.27 GW cm<small>⁻²</small> (1.61 × KDP), a wide band gap of 4.3 eV, and a high birefringence of 0.219 at 1064 nm, enabling phase matching. Structural analyses and theoretical calculations indicate that the intense SHG primarily originates from the (PhPHO<small>₂</small>)<small>⁻</small> anions, which possess significant hyperpolarizability, while the high birefringence mainly stems from the planar aromatic cations and their π–π interactions. This study demonstrates that phosphinate salts are a promising class of materials for use in ultraviolet nonlinear optics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10547-10552"},"PeriodicalIF":5.1,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronic control of ferroelectric field coupling for enhanced ultraviolet photodetection","authors":"Lei Li, Zhikang Song, Jia-Han Zhang, Shan Li, Zeng Liu and Weihua Tang","doi":"10.1039/D6TC00779A","DOIUrl":"https://doi.org/10.1039/D6TC00779A","url":null,"abstract":"<p >Wide and ultrawide bandgap semiconductors, including but not limited to ZnO, GaN, SnO<small>₂</small> and Ga<small>₂</small>O<small>₃</small>, have emerged as a class of ultraviolet (UV) photosensitive semiconductors, displaying huge potential for internet of things, optical communications and imaging. However, achieving a high-performance UV PD without complicated designs at low supply voltages and weak light intensities remains challenging. Fabricating such UV PDs would help in developing integrated devices with more functionalities than the basic photodetection ability, which is highly required and has triggered ever-growing interest in scientific and industrial communities. Ferroelectric thin films have become a potential candidate in enhancing UV detection due to their excellent dielectric, piezoelectric, pyroelectric, and acousto-optic effects, which can satisfy the demand for the diversified development of UV PDs by virtue of multi-field coupling. In this review, the field coupling effects induced by ferroelectric materials for improving UV photodetection will be discussed in detail. The advantages and challenges of ferroelectric field-coupled UV PDs are summarized, and the possible development directions in the future, such as in the development of neuromorphic visual sensors and in-sensor computing, are proposed.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 23","pages":" 9863-9880"},"PeriodicalIF":5.1,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selector-only memory in Si-doped GeSeTe chalcogenide with superior endurance and memory window","authors":"Na Eun Kim, Min Kyu Yang and Gun Hwan Kim","doi":"10.1039/D6TC00505E","DOIUrl":"https://doi.org/10.1039/D6TC00505E","url":null,"abstract":"<p >Selector-only memory (SOM) devices based on chalcogenide materials are attractive candidates for high-density memory arrays. SOMs operate through polarity-dependent threshold switching and can retain distinct threshold voltage states <em>V</em><small>_th</small> even after bias removal, thereby enabling simultaneous memory and selection functionality within crossbar architectures. This operation demands both robust endurance and a wide memory window (MW); however, current chalcogenide SOMs typically suffer from limited endurance and a narrow MW, which severely restrict their potential for multi-bit or high-density operations. We address these limitations by incorporating silicon (Si) into a W/GeSeTe/W structure. The optimized Si-doped device exhibits endurance exceeding 10<small>⁸</small> cycles and a significantly widened MW of 2.4 V, compared with 10<small>⁵</small> cycles and 0.7 V for the undoped GeSeTe device, while maintaining a low leakage current (3.2–11.5 nA). Mechanistic analysis reveals that Si incorporation induces two complementary effects: (1) the formation of stronger Si–Ge and Si–Se bonds that reinforce the amorphous network structure, and (2) an increase in trap depth difference (Δ<em>Φ</em><small>_t</small>) between the two switching states (0.021 → 0.149 eV). This increase in Δ<em>Φ</em><small>_t</small>, attributed to the electronegativity difference between Si and its bonding partners (Ge, Se), directly accounts for the significant MW widening. Furthermore, Si incorporation suppresses defect migration and stabilizes the trap-energy landscape under prolonged cycling, resulting in consistent switching characteristics, enhanced thermal stability, and markedly improved reliability. Overall, Si doping simultaneously enhances the structural, electronic, and thermal robustness of GeSeTe, providing a practical and scalable route toward high-endurance, wide-window, and thermally stable SOM devices suitable for next-generation three-dimensional (3D) crossbar memory integration.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 23","pages":" 10261-10273"},"PeriodicalIF":5.1,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ionic liquid bridging buried interface for high-performance flexible self-powered perovskite nanowire photodetectors with excellent mechanical stability","authors":"Ronghuan Liu, Bihua Hu, Dingjun Wu, Weican Hu, Shiyu Chen, Zi-Wei Zheng and Hai Zhou","doi":"10.1039/D6TC00954A","DOIUrl":"https://doi.org/10.1039/D6TC00954A","url":null,"abstract":"<p >Flexible, self-powered, carbon-based perovskite nanowire (PNW) photodetectors (PDs) are promising candidates for next-generation optoelectronics owing to their light weight, mechanical flexibility, low cost, and ability to operate without an external power supply. However, their performance and mechanical robustness are often limited by the buried SnO<small>₂</small>/PNW interface, where interfacial defects, unfavorable energy-level alignment, and residual strain impede charge extraction and stress relaxation, thereby increasing non-radiative recombination and accelerating degradation under bending. Herein, we report an ionic-liquid “molecular bridge” strategy using 1-butyl-3-methylimidazolium hydrogen sulfate (BMIMHSO<small>₄</small>) to engineer the buried interface in carbon-based self-powered PNW PDs. The BMIMHSO<small>₄</small> interlayer effectively passivates interfacial defects, suppresses non-radiative recombination, optimizes energy-level alignment, and promotes interfacial stress release, thereby simultaneously enhancing device performance and flexibility stability. Rigid devices with a Glass/FTO/SnO<small>₂</small>/BMIMHSO<small>₄</small>/MAPbI<small>₃</small> PNWs/PMMA/Carbon architecture deliver an outstanding linear dynamic range of 190 dB, a high responsivity of 11.52 A W<small>⁻¹</small>, and a detectivity of 5.45 × 10<small>¹³</small> Jones, ranking among the best reported carbon-based self-powered perovskite PDs to date. Notably, the flexible BMIMHSO<small>₄</small>-modified carbon-based devices retain 95% of their initial performance after 2000 bending cycles, outperforming most flexible perovskite PDs employing precious-metal electrodes. This work provides a simple, air-processable buried-interface engineering route for low-cost, high-performance, and mechanically reliable flexible PNW photodetectors, accelerating their practical deployment in wearable and flexible optoelectronic applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 24","pages":" 10538-10546"},"PeriodicalIF":5.1,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148314662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mn–Sn co-doped NiO nanostructures with boosted activity for integrated energy conversion and storage","authors":"Aman Kumar, Vijay Kumar and M. A. Shah","doi":"10.1039/D6TC00553E","DOIUrl":"https://doi.org/10.1039/D6TC00553E","url":null,"abstract":"<p >Mn and Sn co-doped nickel oxide (NiO) nanostructures were synthesized with controlled compositions using the formula Ni<small>_0.9</small>(Mn<small>_{1−<em>x</em>}</small>Sn<small>_<em>x</em></small>)<small>_0.1</small>O (<em>x</em> = 0.00, 0.25, 0.50, and 0.75), corresponding to pristine NiO, NMS 2, NMS 5, and NMS 7. Their structural, electrochemical, and catalytic properties were systematically investigated. Among the series, the NMS 5 composition (5% co-doping) exhibited the best overall performance, delivering a high specific capacitance of 1339.09 F g<small>⁻¹</small> at 1 mV s<small>⁻¹</small> and 1467.91 F g<small>⁻¹</small> at 13 mA cm<small>⁻²</small>, along with an energy density of 50.96 Wh kg<small>⁻¹</small> at a power density of 677.08 W kg<small>⁻¹</small>, highlighting its suitability for high-performance supercapacitor applications. In addition, NMS 5 demonstrated excellent bifunctional electrocatalytic activity toward overall water splitting, achieving low overpotentials of 208 mV for the hydrogen evolution reaction and 126 mV for the oxygen evolution reaction at 10 mA cm<small>⁻²</small>, accompanied by favourable Tafel slopes of 194 and 162 mV dec<small>⁻¹</small>, indicating improved reaction kinetics and charge-transfer efficiency. The enhanced performance was further supported by its highest double-layer capacitance (1.782 mF) and electrochemically active surface area (16.2 cm<small>²</small>), confirming an increased density of accessible redox-active sites. These results demonstrate that synergistic Mn and Sn co-doping effectively tailors the electronic structure and interfacial properties of NiO, establishing it as a promising multifunctional electrode material for advanced energy storage and water-splitting applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 23","pages":" 10288-10299"},"PeriodicalIF":5.1,"publicationDate":"2026-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multidimensional regulation of interfacial microenvironment by alkali metal ions for selective photothermal CO2 conversion","authors":"Mengcheng Zhan, Xinyu Guo, Jingwen Jiang, Lanzhi Mu, Baohui Li, Huiying Gao, Weiping Zhang, Dandan Cui, Tengfei Gao, Dong Xu and Kun Zhao","doi":"10.1039/D6TC00661B","DOIUrl":"https://doi.org/10.1039/D6TC00661B","url":null,"abstract":"<p >Photothermal CO<small>₂</small> conversion holds significant potential for sustainable fuel synthesis. However, achieving selective control toward high-value multi-carbon products remains a fundamental challenge, constrained by the complex coupling of electronic, energetic, and kinetic factors at the catalyst interface. In this context, alkali metal ions (Li<small>⁺</small>, Na<small>⁺</small>, K<small>⁺</small>, Cs<small>⁺</small>) serve as dynamic “multidimensional interface modulators”. By promoting the accumulation and enrichment of interfacial electrons, they overcome the traditional trade-off between activity and selectivity in catalysis. We propose a unified “electron–energy–process” three-dimensional synergistic framework to elucidate their cross-scale regulatory mechanisms: (i) at the electronic level, modulating the electron density of active sites and the adsorption behavior of intermediates through electrostatic induction and charge rearrangement; (ii) at the energy level, constructing local electric fields to enhance the separation and migration efficiency of photogenerated carriers; (iii) at the process level, driving the dynamic reconstruction of photothermal interfaces to steer reaction pathways toward the evolution of high-value products. This framework systematically elucidates the role mechanisms of alkali metals across diverse systems, including carbon-based materials, metal interfaces, semiconductors, and insulators, integrating previously fragmented mechanistic insights into a unified design paradigm. We further identify key current challenges—such as dynamic interfacial evolution, alkali metal loss, and the integration of scalable reactors—and outline promising frontier strategies involving <em>in situ</em> characterization, machine learning-assisted catalyst design, and multi-field coupled systems. By offering a multidimensional perspective spanning from atomic-scale regulation to macroscopic process optimization, this review aims to accelerate the development of highly selective, stable, and efficient photothermal CO<small>₂</small> conversion technologies, thereby contributing to the goal of achieving carbon neutrality.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 19","pages":" 7935-7951"},"PeriodicalIF":5.1,"publicationDate":"2026-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147978718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}