Journal of Materials Chemistry C最新文献

{"title":"Asymmetric light transmission via Sb2S3-enhanced nonreciprocal gratings on a glass substrate","authors":"Xin Cui, Qi Fang, Jingfei Ye, Fenglin Xian and Gaige Zheng","doi":"10.1039/D5TC02889B","DOIUrl":"https://doi.org/10.1039/D5TC02889B","url":null,"abstract":"<p >We propose and demonstrate a compact, high-performance optical isolator utilizing nonreciprocal gratings enhanced by antimony trisulfide (Sb<small>₂</small>S<small>₃</small>) deposited on a glass substrate. The vertical asymmetry created by layered materials and the amorphous silicon (a-Si) grating enables direction-dependent optical transmission behavior in the near-infrared spectral range. Rigorous coupled-wave analysis (RCWA) simulations reveal that the introduction of Sb<small>₂</small>S<small>₃</small> significantly boosts nonreciprocal transmission contrast, enabling an isolation ratio of 22.28 dB for an a-Si surface grating with a period <em>p</em> of 1 μm, a fill factor <em>f</em> of 0.5, and a groove depth <em>h</em> of 0.36 μm on a Sb<small>₂</small>S<small>₃</small>/glass stack. Breaking mirror symmetry yields polarization-selective optical isolation, supporting both transverse-electric (TE) and transverse-magnetic (TM) polarizations. Calculated and measured transmittance spectra match closely for both TE and TM at normal incidence, confirming the grating model and fabrication fidelity. Transitioning Sb<small>₂</small>S<small>₃</small> to the crystalline phase substantially elevates asymmetric transmission for both polarizations, as captured by the model. This work provides a promising route toward scalable, efficient, and broadband nonreciprocal photonic devices based on cost-effective and versatile material platforms.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 20979-20988"},"PeriodicalIF":5.1,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145341102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-high brightness near-infrared perovskite light-emitting diodes enabled by aluminum-doped zinc oxide electron transport layers","authors":"Johan Iskandar, Chih-Yi Liu, Mao-Cheng Huang, Chutipol Harnthanasak, Galing Murokinas, Yi-Sheng Chen, Didik Notosudjono, Chih-Chien Lee and Shun-Wei Liu","doi":"10.1039/D5TC02705E","DOIUrl":"https://doi.org/10.1039/D5TC02705E","url":null,"abstract":"<p >Near-infrared (NIR) perovskite light-emitting diodes (PeLEDs) have achieved substantial gains in quantum efficiency, yet their limited brightness remains a significant constraint for practical deployment. Here, we demonstrate a highly efficient approach to enhancing NIR PeLEDs’ brightness by incorporating a solution-processed aluminum-doped zinc oxide (AZO) electron transport layer (ETL). Systematic structural, optical, and electronic characterizations reveal that AZO enables improved electron transport properties, better energy-level alignment, and enhanced charge injection dynamics. As a result, AZO-integrated FAPbI<small>₃</small> PeLEDs exhibit an outstanding brightness of 3313.9 W sr<small>⁻¹</small> m<small>⁻²</small>, a 146% increase over reference devices. Electrochemical impedance spectroscopy (EIS) further confirms a substantially lower charge transfer resistance (1178.02 Ω) and reduced surface charge recombination resistance (397.11 Ω), indicating more efficient carrier transport and recombination. This work provides a scalable and effective strategy to overcome brightness limitations in NIR PeLEDs, advancing their potential for high-intensity optoelectronic applications, including next-generation display technologies and NIR light sources.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 41","pages":" 21090-21097"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145339747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular doping with 4-aminobenzylphosphonic acid for stable and efficient inverted perovskite solar cells","authors":"Zhichun Yang, Sheng Wang, Mengyu Li, Waqar Ahmad, Changgang Yang, Ruiyun Chen, Guofeng Zhang, Chengbing Qin, Liantuan Xiao and Suotang Jia","doi":"10.1039/D5TC02789F","DOIUrl":"https://doi.org/10.1039/D5TC02789F","url":null,"abstract":"<p >Long-term stability continues to be the primary obstacle for the widespread industrialization of cost-effective perovskite solar cells (PSCs), in spite of remarkable achievements in their efficiency. Molecular doping in polycrystalline perovskites is a feasible strategy to enhance device stability without sacrificing efficiency by improving film quality and optimizing interfacial properties. Herein, we report a functional 4-aminobenzylphosphonic acid (ABPA) molecular doping approach to improve perovskite film quality, as well as the critical performance parameters and device stability in inverted PSCs. The perovskite film incorporating ABPA exhibits a compact surface morphology, lower roughness and defect density, improved crystallinity, well-aligned energy levels, and reduced non-radiative recombination, resulting from the versatile intermolecular interactions between ABPA and the perovskite precursor species. The coordination bonding between the phosphonate groups (–PO<small>₃</small>H<small>₂</small>) and undercoordinated Pb<small>²⁺</small> ions, as well as the hydrogen bonding between the amine (–NH<small>₂</small>) moiety and formamidinium/halides, has been comparatively investigated. Consequently, the optimal device based on the ABPA-doped perovskite film delivered a power conversion efficiency of 23.81% (certified 22.94%). Furthermore, the unencapsulated ABPA-modulated device retained 95% of its original efficiency after being stressed under continuous exposure to 1 sun equivalent illumination at 50 °C in a nitrogen (N<small>₂</small>) environment with maximum power point tracking for 2000 hours.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20780-20789"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring the pseudocapacitive performance of hierarchical α-MoO3/CoS2 nanostructures for enhanced electrochemical properties of aqueous symmetric supercapacitors","authors":"Mehedi Hasan, Md. Raihan Siddiki, Md. Abdullah Zubair and Muhammad Rakibul Islam","doi":"10.1039/D5TC02478A","DOIUrl":"https://doi.org/10.1039/D5TC02478A","url":null,"abstract":"<p >In this study, α-MoO<small>₃</small>/CoS<small>₂</small> nanocomposites with varying CoS<small>₂</small> contents (0–7% wt) were synthesized using a one-step hydrothermal method to investigate the effect of CoS<small>₂</small> incorporation into α-MoO<small>₃</small> and to identify the optimal composition for enhanced electrochemical energy storage performance. Among the synthesized nanomaterials, the α-MoO<small>₃</small>/CoS<small>₂</small> with 5% wt CoS<small>₂</small> exhibited the highest specific capacitance of 553 F g<small>⁻¹</small> at a current density of 0.5 A g<small>⁻¹</small> in a three-electrode setup, significantly outperforming α-MoO<small>₃</small>, which delivered 216 F g<small>⁻¹</small>. Additionally, the optimized nanocomposite, α-MoO<small>₃</small>/CoS<small>₂</small> (5% wt) retained 82.1% of its initial capacitance after 5000 charge–discharge cycles at 5 A g<small>⁻¹</small>, indicating excellent cycling stability. Morphological and structural investigations showed that the enhanced electrochemical behavior of α-MoO<small>₃</small> stemmed from the presence of surface-active sites associated with structural defects and enlarged interlayer distance, which collectively facilitated efficient ion adsorption, promoted interlayer ion intercalation, and accelerated surface redox reactions. Furthermore, the α-MoO<small>₃</small>/CoS<small>₂</small> (5% wt) nanocomposite exhibited enhanced charge-transfer kinetics, reflecting suppressed interfacial charge-transfer resistance and resulting in a higher specific capacitance. Additionally, symmetric supercapacitors based on the α-MoO<small>₃</small>/CoS<small>₂</small> (5% wt) nanocomposite achieved a high energy density of 25.09 Wh kg<small>⁻¹</small> at a power density of 901 W kg<small>⁻¹</small>, successfully powering a red LED for 290 seconds. The device exhibited outstanding long-term electrochemical stability, preserving 97% of its original capacitance after 5000 consecutive charge–discharge cycles. The results demonstrate that the incorporation of conductive CoS<small>₂</small> significantly improves the electrochemical performance of α-MoO<small>₃</small>, indicating its suitability for next-generation energy storage devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 39","pages":" 20235-20250"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145248126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ferromagnetic intercalated compounds CrHfxTe2 with a magnetocaloric effect and negative magnetoresistance","authors":"Kunqi Li, Xueyang Tu, Xuzhou Sun, Hui Bi, Yuqiang Fang and Fuqiang Huang","doi":"10.1039/D5TC02160J","DOIUrl":"https://doi.org/10.1039/D5TC02160J","url":null,"abstract":"<p >Intercalation in van der Waals materials enables novel structures and exotic properties. Herein, we have successfully synthesized two intercalated compounds CrHf<small>_<em>x</em></small>Te<small>₂</small> (<em>x</em> = 0.1, 1/3) <em>via</em> a flux method. CrHf<small>_0.1</small>Te<small>₂</small> and CrHf<small>_1/3</small>Te<small>₂</small> exhibit ferromagnetism with Curie temperatures of 234.9 K and 247.2 K under out-of-plane fields. The maximum magnetic entropy variation of CrHf<small>_0.1</small>Te<small>₂</small> attains 2.85 J kg<small>⁻¹</small> K near 185 K, and the relative cooling power (216.6 J kg<small>⁻¹</small>) exceeds that of multiple van der Waals ferromagnets. Furthermore, negative magnetoresistances of −3.8% and −4.7% are respectively observed in CrHf<small>_0.1</small>Te<small>₂</small> and CrHf<small>_1/3</small>Te<small>₂</small>. This work provides a strategy for designing new intercalation compounds promising for electronic and magnetic applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 36","pages":" 18631-18637"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02160j?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of a high color-purity deep-blue emitter based on an indolo[3,2,1-jk]carbazole center using a crossed long-short axis (CLSA) molecular design strategy","authors":"Jingli Lou, Xuecheng Guo, Yichao Chen, Han Zhang, Ben Zhong Tang and Zhiming Wang","doi":"10.1039/D5TC02735G","DOIUrl":"https://doi.org/10.1039/D5TC02735G","url":null,"abstract":"<p >Moving toward next-generation ultrahigh-definition and high-resolution displays, the development of high-performance blue organic light-emitting diodes (OLEDs) with emission matching the BT.2020 standard is essential and requires advancements in the molecular design strategy. Herein, the molecular design strategy of the crossed long-short axis (CLSA) is applied for the first time for the construction of indolo[3,2,1-<em>jk</em>]carbazole (ICz) for tuning emission color purity <em>via</em> the spectral narrowing effect, and the derivative CNICz-2BuCz exhibits expected optical performance with a full width at half maximum of 33 nm in solution and enhanced PLQY due to the introduction of peripheral <em>tert</em>-butyl modified carbazole groups. Owing to high-lying reverse intersystem crossing channels and a narrow emission characteristic, it exhibits excellent device performance with a maximum external quantum efficiency of 7.46% at CIE<small>_<em>y</em></small> = 0.045, showcasing the great potential of the combination of the CLSA strategy and the ICz group in realizing efficient and narrow blue OLEDs.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 37","pages":" 19168-19173"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145134953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantification of interfacial trap states via bias-applied HAXPES: a chemical-state perspective","authors":"Wen-Jen Chen, Yin-Bo Tseng and Hsiu-Wei Cheng","doi":"10.1039/D5TC01375E","DOIUrl":"https://doi.org/10.1039/D5TC01375E","url":null,"abstract":"<p >An interface where two solid materials meet often disrupts bulk continuity, especially in electronic structures. When an external bias is applied, the interfacial electronic structure forms a voltage barrier that inhibits charge transfer and promotes charge accumulation—a key mechanism in semiconductor devices. However, our understanding of such interfaces remains limited at the molecular scale. Here, we quantitatively characterize interfacial trap states in a model Si|SiO<small>₂</small>|Au MOS structure using bias-applied hard X-ray photoelectron spectroscopy (BA-HAXPES), resolving oxidation state variations across the dielectric layer under real-time bias. While conventional interpretations rely on peak shifts to describe charging effects, our results demonstrate that these shifts are also sensitive to dielectric thickness and local potential variations; thus, we propose a modified Grahame-based framework to contextualize the influence of interfacial potential on chemical-state changes and to support the use of peak intensity as a more reliable indicator. Furthermore, bias-dependent analysis reveals distinct charge dynamics for different oxidation states: Si<small>³⁺</small> exhibits potential-driven delocalization behavior, resembling mobile carriers within the dielectric, whereas Si<small>²⁺</small> remains strongly confined to the SiO<small>₂</small>|Au interface, acting as a localized trap signature. These trends are consistently observed across the full bias range and provide a more direct connection between chemical state evolution and interfacial trap-state activity. Our findings offer molecular-level insight into charge accumulation mechanisms and support future trap-state engineering in nanoscale electronic devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 38","pages":" 19856-19866"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Origin of strong ferromagnetic couplings in ordered double perovskite semiconductors","authors":"Panpan Li, Ziyang Qu, Shihai Wu, Fang Wu, Yi Wan, Ang Li, Erjun Kan and Chengxi Huang","doi":"10.1039/D5TC02792F","DOIUrl":"https://doi.org/10.1039/D5TC02792F","url":null,"abstract":"<p >Ferromagnetic (FM) semiconductors are crucial for advancing the development of spintronic devices for high-performance computing and data storage. However, to date, the realization of room-temperature FM semiconductors remains a great challenge owing to the lack of an effective physical mechanism for strong FM couplings in semiconductors. Herein, we focus on double perovskite semiconductors to explore the mechanism of strong FM couplings. A remarkable correlation between magnetic couplings and spin occupation states in d orbitals is revealed by a systematic comparison between LaCrO<small>₃</small> (LCO) and La<small>₂</small>NiMnO<small>₆</small> (LNMO) perovskites. First-principles calculations show that LCO prefers an antiferromagnetic (AFM) ground state, while LNMO is FM. Such a disparity in magnetic coupling is mainly attributed to the difference in spin occupation states: LCO has a d<small>³</small>–d<small>³</small> occupation state for each nearest-neighboring Cr–Cr pair, while LNMO has a d<small>³</small>–d<small>⁸</small> occupation state for each Ni–Mn pair. The distinctly different magnetic behaviors under strain and charge doping provide further evidence for the occupation-state-dependent magnetic coupling mechanism. Similar behavior has been observed in other d<small>^&lt;5</small>–d<small>^&lt;5</small> and d<small>^&lt;5</small>–d<small>^≥5</small>, single- and double-perovskites, demonstrating the generality of this mechanism. These findings unveil a novel mechanism and a strategy for realizing high-temperature FM semiconductors, which will significantly promote the development of spintronics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 40","pages":" 20667-20674"},"PeriodicalIF":5.1,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable, near temperature insensitive laser-induced graphene nanocomposite strain sensors","authors":"Tom Jacquin, Simon Wanstall, Inkyu Park, Adam A. Stokes, Hadi Heidari, Theodore Lim and Morteza Amjadi","doi":"10.1039/D5TC02865E","DOIUrl":"https://doi.org/10.1039/D5TC02865E","url":null,"abstract":"<p >Soft and flexible sensors offer a potential paradigm shift in wearable bioelectronics to enhance human–machine interfacing for diagnosis, healthcare monitoring, and prosthetic applications. Soft nanocomposite strain sensors have emerged as a promising solution for the real-time monitoring of biomedical signals due to their conformability, stretchability, and resilience to different strain levels. Nonetheless, these sensors are susceptible to external factors like temperature variations, impeding their functionality in real-world applications. This paper introduces a strategy to tackle the considerable temperature sensitivity of nanocomposite strain sensors by fine-tuning the electrothermal properties of laser-induced graphene nanocomposites. The controlled manipulation of laser parameters governs the carbonization process, and the formation of 3D interconnected conductive networks, leading to nanocomposite strain sensors with temperature sensitivities as low as 0.25% °C<small>⁻¹</small>. These sensors enable real-time strain sensing with minimal interference from thermally induced noise in environments prone to significant temperature fluctuations, such as haptic feedback in prosthetics when grasping hot and cold drinks. Additionally, integrating this approach into the design of electrothermal soft actuators results in a self-sensing soft actuator with near-zero temperature sensitivity up to 100 °C, further demonstrating the versatility of these nanocomposite sensors.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 39","pages":" 20000-20012"},"PeriodicalIF":5.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc02865e?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145248106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lightweight and flexible Ni-deposited aramid fabric for electromagnetic interference shielding","authors":"Ying-Kang Li, Wen-Juan Wang, Ya-Juan Cai, Ting Yue, Ke-Xiao Sang, Dan Wu, Ya-Ge Wu, Zi-Hao Yang, Chuan-Zhe Zhao, Jing-Gang Gai and Yi-Xing Sun","doi":"10.1039/D5TC02200B","DOIUrl":"https://doi.org/10.1039/D5TC02200B","url":null,"abstract":"<p >In this study, aramid nanofibers (ANFs) prepared from macroscopic aramid fibers were used as nano-coating materials, and the assembly of ANFs on aramid fabrics (AFs) was realized by layer-by-layer self-assembly (LBL) technology, resulting in AF@ANFs composite fabrics. This process effectively improved the surface chemical inertness of AF fabrics and increased the interfacial force between them and the coating. Subsequently, nickel nanoparticles (Ni NPs) were deposited on the surface of the AF@ANF composite fabrics by ultrasonic pretreatment combined with a palladium-free electroless plating process. This resulted in AF@ANFs@Ni composite fabrics with different Ni NP contents, exhibiting good coating adhesion strength. The electromagnetic shielding performance of AF@ANFs@Ni composite fabrics continues to improve with an increase in Ni NP content. When the concentration of NiCl<small>₂</small> is 40 g L<small>⁻¹</small>, the block resistance of the AF@ANFs@Ni composite fabric is only 0.1 Ω □<small>⁻¹</small>, the conductivity is 138 205.0 S m<small>⁻¹</small>, and the shielding performance is as high as 100.5 dB. The environmental stability test shows that the composite fabric not only has good heat resistance, but also maintains a relatively complete structure in acidic, alkaline and salt environments, and good electromagnetic shielding performance. Without destroying the original fabric structure, the adsorption of ANFs not only increases the surface roughness of the AF fabric, but also improves the surface chemical inertness of the AF matrix, which proves that it is a modified material with good application potential.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 38","pages":" 19712-19723"},"PeriodicalIF":5.1,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}