Journal of Materials Chemistry C最新文献

{"title":"A NiSe layer enhanced the efficiency of hole-conductor-free MAPbI3 perovskite solar cells","authors":"Xiaohui Lu, Xiandong Zhao, Congcong Wu, Shiming Wang, Yanyan Li, Xiaojie Yang, Yang Li and Li Zhao","doi":"10.1039/D4TC03174A","DOIUrl":"https://doi.org/10.1039/D4TC03174A","url":null,"abstract":"<p >Interfacial defects between the perovskite layer and the adjacent charge transport layer play a crucial role in enhancing the power conversion efficiency (PCE) and stability of organic–inorganic halide perovskite solar cells. In this study, we employed a transition metal-containing selenide (NiSe) to modify the interface between the electron transport layer and the perovskite layer. Ni<small>²⁺</small> as a transition metal exhibits a strong propensity for forming octahedral complexes with halide ions, thereby providing a favorable substrate for perovskite crystallization. This significantly contributes to the reduction of defect densities and the fabrication of high-quality perovskite thin films. Our findings indicate that the grain size of the perovskite films markedly increased upon modification with 0.4 mg mL<small>⁻¹</small> NiSe, resulting in a reduction of defect density from 2.175 × 10<small>¹⁶</small> cm<small>⁻³</small> to 1.485 × 10<small>¹⁶</small> cm<small>⁻³</small>. Furthermore, the PCE of the NiSe-modified device, at a concentration of 0.4 mg mL<small>⁻¹</small>, reached 14.85%, a significant improvement compared to that of the unmodified device (12.14%). These results offer a novel approach to fabricate perovskite films with enhanced crystallinity and reduced trap density.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2517-2523"},"PeriodicalIF":5.7,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"K2SiF6:Mn4+ red-luminescent crystals with high external quantum efficiency (EQEmax of 78%) and high thermal quenching temperature (T1/2 > 500 K) enabling high brightness warm white LEDs†","authors":"Wenrui Zhang, Yayun Zhou, Ce Shi, Jiajun Ren, Liying Zhang and Haipeng Ji","doi":"10.1039/D4TC04035J","DOIUrl":"https://doi.org/10.1039/D4TC04035J","url":null,"abstract":"<p >Mn<small>⁴⁺</small>-activated fluoride phosphors are some of the crucial red-emitting phosphors for white lighting systems driven by light-emitting diodes (LEDs). In this study, we successfully synthesized high-quality K<small>₂</small>Si<small>_{1−<em>x</em>}</small>F<small>₆</small>:<em>x</em>Mn<small>⁴⁺</small> (nominal <em>x</em> = 0.03–0.70, measured <em>x</em> of 0.22%–33.3%) crystals, measuring approximately 1 mm in size, through a new cooling-induced crystallization method. These crystals exhibit narrow line-type photoluminescence emission bands and exceptional optical properties, including a high absorption efficiency of up to 92.9% and an external quantum efficiency of up to 78.5%, which are among the record values for Mn<small>⁴⁺</small>-doped fluoride phosphors. Furthermore, they exhibit a notably elevated luminescence thermal quenching temperature (<em>T</em><small>_1/2</small>) exceeding 500 K. A comprehensive investigation into the phase transformation, zero-phonon line tuning, and fluorescence decay behavior as a function of increasing Mn concentrations was also conducted. Practical applications were demonstrated through the fabrication of warm white LEDs, integrating a blue LED with a garnet yellow phosphor and the as-synthesized K<small>₂</small>Si<small>_{1−<em>x</em>}</small>F<small>₆</small>:<em>x</em>Mn<small>⁴⁺</small> (measured <em>x</em> of 2.94%) crystals as the red component. The white LEDs exhibit an impressive luminous efficacy of 192.1 lm W<small>⁻¹</small>, a color rendering index of <em>R</em><small>_a</small> = 87.5 and <em>R</em><small>₉</small> = 62 under a 20 mA driving current. Our study highlights the outstanding properties of Mn<small>⁴⁺</small>-doped fluoride crystals with bulk size rather than conventional powdery form and the potential of the cooling-induced crystallization method for cultivating the crystals.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2337-2346"},"PeriodicalIF":5.7,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two dimensional CuInP2S6/h-BN/MoTe2 van der Waals heterostructure phototransistors with double gate control†","authors":"Sina Li, Junjie Zhou, Jingxian Xiong, Sixian Yang, Jielian Zhang, Weijun Fan and Jingbo Li","doi":"10.1039/D4TC02616K","DOIUrl":"https://doi.org/10.1039/D4TC02616K","url":null,"abstract":"<p >Ferroelectric materials have demonstrated significant potential in the manipulation of optoelectronic processes in emerging device architectures. However, research exploring the synergy between ferroelectric materials and two-dimensional semiconductor materials, as well as direct modulation of the interface band alignment of two-dimensional semiconductor materials in heterostructures, remains limited. Here, we report a ferroelectric photodetector composed of a CuInP<small>₂</small>S<small>₆</small> gate, an h-BN dielectric layer, and a MoTe<small>₂</small> channel. Due to the presence of directional ferroelectric spontaneous polarization charges under an applied electric field, the interface band structure is effectively modulated, greatly enhancing the generation, separation, and transport efficiency of photo-generated electron–hole pairs. Compared to non-ferroelectric back-gated modulation (Si), the photocurrent is boosted by an order of magnitude under top-gate modulation, while the dark current is effectively suppressed. The ferroelectric photodetector exhibits a high responsivity modulation of 6.07 A W<small>⁻¹</small> and a high detection rate of 5.67 × 10<small>¹¹</small> jones. Interestingly, clockwise hysteresis is observed under both single top-gate (<em>V</em><small>_TG</small>) and silicon dioxide back-gate (<em>V</em><small>_BG</small>) modulation, attributed to the charge dynamics at the interface and gate coupling effects. This work reveals the substantial potential of the detector for high-performance optical sensing through the modulation of the interface band structure of semiconductor junctions by two-dimensional ferroelectric materials.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2378-2387"},"PeriodicalIF":5.7,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable spin transport and spin-dependent Seebeck effect in boron-based two-dimensional MBene transition metal compounds†","authors":"Cuicui Sun, Yuxiu Wang, Haocheng Zhang, Yue Sun, Zhongteng Liu, Xuanchen Zhou and Guiling Zhang","doi":"10.1039/D4TC03590A","DOIUrl":"https://doi.org/10.1039/D4TC03590A","url":null,"abstract":"<p >Thermoelectric devices, which focus on the conversion of heat into electrical energy, are crucial for renewable energy applications. Spin caloritronics, a field that explores the interactions between heat, charge, and spin, has emerged as a promising area of research. By incorporating spin, new mechanisms and functionalities are introduced for more efficient thermal-to-electrical conversion. The spin Seebeck effect, which generates a voltage solely through a temperature gradient, represents a compelling branch of spin caloritronics, offering significant potential for advanced thermoelectric devices. In this study, we investigated three 2D transition metal borides, M<small>₂</small>B (M = Sc, Ti, and V), as candidates for spin and spin thermoelectric materials using first-principles calculations combined with density functional theory and nonequilibrium Green's function methods. Our calculations revealed that all three structures exhibited ferromagnetic states and metallic characteristics. Notably, the M<small>₂</small>B monolayers demonstrated exceptional electromagnetic properties, including high Curie temperatures and easy magnetization planes. Furthermore, these materials exhibited significant spin filtering effects (SFEs), negative differential resistance, and high magnetoresistance. We also found that spin-dependent currents were generated by applying a temperature gradient between the heat source and the cold source, suggesting the presence of thermally driven spin carrier transport. Additionally, thermal SFE and negative differential thermoelectric resistance were observed in M<small>₂</small>B (M = Sc, Ti, and V). The figure of merit of M<small>₂</small>B reached up to 3.0 at 300 K with a possibility of further enhancement by increasing the temperature <em>T</em>. Our results suggest the potential for boron-based 2D materials, specifically MBene, to serve as spin caloritronic materials, offering new design possibilities for low-power-consumption devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2485-2498"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A highly stretchable thermoelectric generator developed from polyaniline-based nanocomposites for body heat harvesting†","authors":"Guoliang Li, Jingda Zhou, Lu Yang, Yuan Deng and Yao Wang","doi":"10.1039/D4TC04252B","DOIUrl":"https://doi.org/10.1039/D4TC04252B","url":null,"abstract":"<p >Energy harvesting as a result of the temperature difference between the body and environment <em>via</em> the Seebeck effect provides an ideal long-term power supply technique for wearable electronics. Efficient energy utilization requires good thermal contact between a thermoelectric generator (TEG) and human skin, and thus not only good compliance but also high stretchability of a device is necessary. This is still a challenge for TEGs especially without compromising their power generation performance. Here, an approach for realizing highly stretchable TEGs (STEGs) with good TE performance has been developed, where polyaniline-based nanocomposites with p-type tellurium and n-type silver selenide TE nanofillers were employed as TE legs with greatly enhanced TE properties, liquid metal as a stretchable highly conductive interconnect and elastomers for encapsulation. A STEG with only two pairs of p–n legs could generate power of 2.4 μW at a temperature difference of 80 K, together with exhibiting good mechanical robustness and output stability under 80% stretch. The function of a STEG as a body heat harvester is further demonstrated <em>via</em> powering a fan while a wearer is running. Our study provides a promising design and fabrication strategy for STEGs to power wearable electronics.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2295-2302"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced room-temperature electrocaloric performance by both multiphase coexistence and diffused phase transition in (Ba0.65Sr0.3Ca0.05)(SnxTi1−x)O3 ferroelectric ceramics†","authors":"Mingmei Lin, Zhihong Luo, Haochen Sun, Biao Zhang, Feifei Han, Xiang Niu, Dingyuan Wang, Yisong Bai, Xue Chen, Biaolin Peng, Shengguo Lu and Laijun Liu","doi":"10.1039/D4TC03478C","DOIUrl":"https://doi.org/10.1039/D4TC03478C","url":null,"abstract":"<p >Electrocaloric (EC) solid-state refrigeration has been widely studied owing to its advantages of low energy consumption, environmental friendliness, and high refrigeration efficiency, but it has the challenges of small adiabatic temperature change (Δ<em>T</em>) near room temperature and narrow working temperature span (<em>T</em><small>_span</small>). Δ<em>T</em> is associated with ferroelectric domain configuration, which can be modified by multiphase coexistence, while the operating temperature region can be extended by a diffused phase transition. In this work, tin was introduced in (Ba<small>_0.65</small>Sr<small>_0.3</small>Ca<small>_0.05</small>)TiO<small>₃</small> ceramics to improve their EC performances. The introduction of Sn<small>⁴⁺</small> effectively adjusted their phase-transition temperature and increased their breakdown field strength, which were highly beneficial for achieving a substantial Δ<em>T</em>. The highest Δ<em>T</em> of 1.79 K (indirect) and 2.18 K (direct) at 20 °C appeared in the (Ba<small>_0.65</small>Sr<small>_0.3</small>Ca<small>_0.05</small>)(Sn<small>_0.02</small>Ti<small>_0.98</small>)O<small>₃</small> sample. The high electrocaloric effect (ECE) with a large temperature span near room temperature was obtained by modifying the phase transition temperature. Multiphase coexistence not only increased the number of ferroelectric domains (dipolar entropy) but also flattened the energy landscape to favor an easy polarization rotation. Thus, the ceramic samples prepared in this work have proven to be promising candidates for solid-state cooling.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 4","pages":" 1713-1723"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance organic thin-film phototransistors based on stacked p–n heterojunctions for enhanced optoelectronic response†","authors":"Po-Hsiang Fang, Zhao-Lun Kuo, Yu-Tong Wu, Horng-Long Cheng and Wei-Yang Chou","doi":"10.1039/D4TC04467C","DOIUrl":"https://doi.org/10.1039/D4TC04467C","url":null,"abstract":"<p >This research mainly focuses on utilizing the characteristics of organic semiconductor materials to design and fabricate high-performance organic thin-film phototransistors. The semiconductor materials employed include the n-type semiconductor <em>N</em>,<em>N</em>′-ditridecylperylene-3,4,9,10-tetracarboxydiimide (PTCDI-C<small>₁₃</small>) and the p-type semiconductor pentacene. These p- and n-type semiconductors are arranged in a tandem structure to form the active layer of the device, creating a heterojunction interface. The tandem structure offers the advantage of enabling the device to exhibit excellent light absorption capabilities across the entire visible light spectrum (400–700 nm). When light illuminates the channel of the active layer, excitons are generated in the semiconductor materials. The heterojunction interface can provide a built-in electric field, which facilitates the dissociation of excitons and charge transport, enabling the photogenerated charge carriers to be effectively collected. This significantly enhances the photosensitivity and photoresponsivity performances, far exceeding those of a single semiconductor layer. Overall, this research has successfully developed a high-performance organic thin-film phototransistor, which has important implications for the development of new optoelectronic devices and applications.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2210-2218"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MOF-derived, carbon-mediated construction of a hierarchical rod-shaped MoO3/Co3O4 heterojunction towards efficient triethylamine detection†","authors":"Qingmei Zhang, Yuanhui Zhang, Keyi Ge, Fei Huang, Hu Meng and Wei Yang","doi":"10.1039/D4TC04101A","DOIUrl":"https://doi.org/10.1039/D4TC04101A","url":null,"abstract":"<p >The efficient construction of a MoO<small>₃</small>-based heterojunction can contribute toward enhancing the triethylamine-sensing ability, yet considerable challenges remain. In this study, a novel hierarchical rod-like MoO<small>₃</small>/Co<small>₃</small>O<small>₄</small> heterostructure was constructed through a metal–organic framework (MOF)-derived, carbon-mediated strategy. Benefiting from the specific structural characteristic (increased contents of adsorbed oxygen species and catalytic Co<small>³⁺</small>) and synergistic catalytic activity of two transition metal oxides (MoO<small>₃</small> and Co<small>₃</small>O<small>₄</small>), the gas sensor based on this MoO<small>₃</small>/Co<small>₃</small>O<small>₄</small> heterojunction exhibited superior selectivity and a good response (<em>R</em><small>_a</small>/<em>R</em><small>_g</small> = 174.5/100 ppm) to triethylamine (TEA), with a real detection limit as low as 0.1 ppm. This gas-sensing result is considerably higher those reported in many recent studies, indicating the competitive potential of this material for TEA-sensing application. Finally, an <em>in situ</em> DRIFTS analysis was conducted to reveal the possible intermediates (C<small>₂</small>H<small>₄</small> and NH<small>_<em>x</em></small>) and the reaction pathway of TEA over this MoO<small>₃</small>/Co<small>₃</small>O<small>₄</small> surface. This work presents a new avenue for constructing multi-component heterostructures assisted by the <em>in situ</em> MOF-derived carbon.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2524-2534"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence, persistent luminescence and thermoluminescence studies of Cr-doped zinc gallogermanate (ZGGO:Cr)†","authors":"Duarte M. Esteves, Maria S. Batista, Joana Rodrigues, Ana V. Girão, Luís C. Alves, Ana L. Rodrigues, M. Isabel Dias, Florinda M. Costa, Katharina Lorenz, Sónia O. Pereira, Teresa Monteiro and Marco Peres","doi":"10.1039/D4TC03924F","DOIUrl":"https://doi.org/10.1039/D4TC03924F","url":null,"abstract":"<p >This paper reports a comprehensive study of single-phase polycrystalline chromium-doped zinc gallogermanate (ZGGO:Cr) synthesised by a high-temperature solid-state reaction, employing photoluminescence (PL), persistent luminescence (PersL) and thermoluminescence (TL) measurements. A bandgap energy of ∼4.77 eV (260 nm) was estimated by optical reflectance. The ZGGO:Cr luminescence was dominated by a red/near-infrared emission due to Cr<small>³⁺</small> optical centres, which displayed well-resolved R1, R2, N1 and N2 lines, and a broad vibronic progression. PL excitation (PLE) data revealed that those centres were preferentially populated <em>via</em> intraionic absorption, being also excited <em>via</em> band-to-band absorption and by a defect excitation band at ∼0.9 eV below the conduction band, whose origin remains unknown. PersL of more than 10 h was identified and attributed to the N2 Cr<small>³⁺</small>-related defect. The TL results suggest a continuous distribution of electronic states with activation energies ranging from about 0.7 eV to 1.2 eV. An effective density of states was obtained for different delay times between irradiation and heating, revealing a rapid depopulation for activation energies below ∼1 eV. In short, this research contributes to a better understanding of traps in ZGGO:Cr and highlights the potential of the Cr<small>³⁺</small>-related emission in this material for dosimetric purposes, paving the way for developing novel ZGGO:Cr-based devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 48","pages":" 19359-19370"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensitized near-infrared lanthanide emission in chalcogenide perovskites†","authors":"Jinan H. Al Shuhaib, Isabel J. Ferrer, José R. Ares, Salvatore Cianci, Federico Tuzi, Elena Blundo, Antonio Polimeni, Antonio Benayas, Riccardo Marin and Fabrice Leardini","doi":"10.1039/D4TC04446K","DOIUrl":"https://doi.org/10.1039/D4TC04446K","url":null,"abstract":"<p >Semiconductor materials capable of hosting luminescent lanthanide ions (Ln<small>³⁺</small>) and sensitize their emission are scarce. Halide perovskites are prime systems for this purpose, yet they often feature toxic elements (<em>e.g.</em>, lead) in their composition and have reduced stability. The discovery of alternative semiconductors that feature host-to-Ln<small>³⁺</small> energy transfer mechanisms – while being more stable and environmentally benign – would thus broaden the applicability of this class of luminescent materials. Herein, we report near-infrared (NIR) emitting phosphors made of BaZrS<small>₃</small> chalcogenide perovskite doped with Ln<small>³⁺</small> ions (Ln = Yb, Er, Nd). We chose BaZrS<small>₃</small> because it features (i) crystallographic sites that can accommodate Ln<small>³⁺</small> ions, (ii) high light absorption coefficient in the visible, and (iii) stability. The phosphors were prepared <em>via</em> sulfurization of Ln<small>³⁺</small>-doped BaZrO<small>₃</small> microparticles obtained by a microwave-assisted procedure. The so-obtained Ln<small>³⁺</small>-doped BaZrS<small>₃</small> display low-temperature NIR emission characteristic of each Ln<small>³⁺</small> ion when exciting the matrix. Following photoluminescence studies on doped and undoped BaZrS<small>₃</small> as a function of temperature, we propose an energy level scheme that explains the rich NIR photoluminescence displayed by these phosphors. The obtained results pave the way for the optimization of Ln<small>³⁺</small>-doped BaZrS<small>₃</small> for optical applications and are expected to spur the study of other ternary chalcogenides sensitization of Ln<small>³⁺</small> luminescence.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 5","pages":" 2238-2246"},"PeriodicalIF":5.7,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}