采用表面活化键合(SAB)技术的Cu/介电杂化键合用于三维集成

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886151

Ran He, A. Yamauchi, T. Suga

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引用次数: 1

摘要

表面活化对低温晶圆键合技术的发展具有重要意义。我们利用表面活化键合技术开发了一种新的低温Cu/介电杂化键合工艺，用于三维集成应用。本文报道了Ar等离子体和Ar FAB处理的杂化表面的表面分析结果，讨论了不同表面活化工艺对晶圆键合的影响，并对未来进行了展望。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cu/dielectric hybrid bonding using surface-activated bonding (SAB) technologies for 3D integration

Surface activation is of great importance for low temperature wafer bonding technology development. We developed new low temperature Cu/dielectric hybrid bonding process by using surface-activated bonding technologies for 3D integration application. We report the surface analysis results of the hybrid surface treated by Ar plasma and Ar FAB, and discuss the effects of different surface activation processes on wafer bonding, and conclude with prospects for the future.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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